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ADM6996MX-AD-T-1 ADM6996MX-AD-T-1 Infineon Technologies ADM6996M%2CI%2CLC%2CFC.pdf Description: IC SWITCH ETHER 5PORT 128-FQFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 2.8V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AN983BX-BG-R-V1 AN983BX-BG-R-V1 Infineon Technologies AN983B_X.pdf Description: IC CTRLR LAN PCI-ETHER 128QFP
Packaging: Tape & Reel (TR)
Package / Case: 128-BFQFP
Function: Controller
Interface: PCI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 150mA
Protocol: Ethernet
Standards: IEEE 802.3, 10/100 Base-T/TX PHY
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAR 50-02V E6768 BAR 50-02V E6768 Infineon Technologies bar50series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114fea7dd410a92 Description: RF DIODE PIN 50V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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BAR6704E6327HTSA1 BAR6704E6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
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BAR 90-081LS E6327 BAR 90-081LS E6327 Infineon Technologies BAR90-081LS.pdf Description: RF DIODE PIN 80V 150MW TSSLP-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Diode Type: PIN - 4 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: TSSLP-8-1
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 150 mW
Produkt ist nicht verfügbar
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BAS116E6433HTMA1 BAS116E6433HTMA1 Infineon Technologies bas116series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141c76732b0451 Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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BAS21UE6433HTMA1 BAS21UE6433HTMA1 Infineon Technologies Infineon-BAS21SERIES-DS-v01_01-en.pdf?fileId=5546d4624933b8750149880ded0b7e1a Description: DIODE ARRAY GP 200V 250MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
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BAS28E6433HTMA1 BAS28E6433HTMA1 Infineon Technologies bas28series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c0848da041a Description: DIODE ARR GP 80V 200MA SOT1433D
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT-143-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Produkt ist nicht verfügbar
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BAS 3005A-02V E6327 BAS 3005A-02V E6327 Infineon Technologies Infineon-BAS3005ASERIES-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432d9b3066012db872f12d0bb7 Description: DIODE SCHOTTKY 30V 500MA SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Produkt ist nicht verfügbar
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BAS3010S02LRHE6327XTSA1 BAS3010S02LRHE6327XTSA1 Infineon Technologies bas3010s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ddc9372011e24fd0b124647 Description: DIODE SCHOTTKY 30V 1A PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
15000+0.18 EUR
Mindestbestellmenge: 15000
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BAS4002S02LRHE6327XTSA1 BAS4002S02LRHE6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTT 40V 200MA PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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BAS 52-02V E6433 BAS 52-02V E6433 Infineon Technologies bas52series.pdf Description: DIODE SCHOTTKY 45V 750MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 45 V
Produkt ist nicht verfügbar
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BAT 15-02LS E6327 BAT 15-02LS E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: RF DIODE SCHOTTKY 4V TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Obsolete
Current - Max: 110 mA
Produkt ist nicht verfügbar
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BAT2402LSE6327XTSA1 BAT2402LSE6327XTSA1 Infineon Technologies Infineon-BAT24-02LS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638964eed4e95 Description: DIODE SCHOTTKY 4V 100MW TSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 15000 Stücke:
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15000+0.75 EUR
Mindestbestellmenge: 15000
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BAT240AE6433HTMA1 BAT240AE6433HTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE ARR SCHOT 240V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
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BAT5403WE6327HTSA1 BAT5403WE6327HTSA1 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOT 30V 200MA PGSOD3233D
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.061 EUR
6000+0.059 EUR
Mindestbestellmenge: 3000
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BAT 54-04W E6327 BAT 54-04W E6327 Infineon Technologies BAT54_Series.pdf Description: DIODE ARRAY SCHOTTKY 30V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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BAT 63-02V E6327 BAT 63-02V E6327 Infineon Technologies bat63series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151817843c0df4 Description: RF DIODE SCHOTTKY 3V 100MW SC79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SC79-2
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6405WE6327HTSA1 BAT6405WE6327HTSA1 Infineon Technologies INFNS11551-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 250MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV 70S E6433 BAV 70S E6433 Infineon Technologies bav70series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c0ba40e041d Description: DIODE ARR GP 80V 200MA SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Produkt ist nicht verfügbar
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BB 555 E7912 BB 555 E7912 Infineon Technologies BB535%2CBB555_Series.pdf Description: DIODE TUNING 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.8
Produkt ist nicht verfügbar
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BB 555-02V E7912 BB 555-02V E7912 Infineon Technologies BB535%2CBB555_Series.pdf Description: DIODE TUNING 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.8
Produkt ist nicht verfügbar
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BB639CE7908HTSA1 BB639CE7908HTSA1 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VARIABLE 30V 20MA SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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BBY5202LE6816XTMA1 BBY5202LE6816XTMA1 Infineon Technologies bby52series.pdf Description: DIODE TUNING 7V 20MA TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-TSLP-2-1
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.1
Produkt ist nicht verfügbar
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BC817K16E6327HTSA1 BC817K16E6327HTSA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.097 EUR
15000+0.083 EUR
30000+0.078 EUR
75000+0.073 EUR
Mindestbestellmenge: 3000
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BC817K16E6433HTMA1 BC817K16E6433HTMA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BC817K25WE6327HTSA1 BC817K25WE6327HTSA1 Infineon Technologies bc817series_bc818series.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901154636aab91919 Description: TRANS NPN 45V 0.5A SOT-323
Produkt ist nicht verfügbar
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BC 817K-25W E6433 BC 817K-25W E6433 Infineon Technologies bc817series_bc818series.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901154636aab91919 Description: TRANS NPN 45V 0.5A SOT-323
Produkt ist nicht verfügbar
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BC817K40E6327HTSA1 BC817K40E6327HTSA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.099 EUR
6000+0.092 EUR
9000+0.076 EUR
30000+0.075 EUR
75000+0.067 EUR
Mindestbestellmenge: 3000
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BC817K40E6433HTMA1 BC817K40E6433HTMA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.076 EUR
30000+0.075 EUR
50000+0.067 EUR
Mindestbestellmenge: 10000
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BC817K40WE6327HTSA1 BC817K40WE6327HTSA1 Infineon Technologies bc817series_bc818series.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901154636aab91919 Description: TRANS NPN 45V 0.5A SOT-323
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BC 818K-25 E6327 BC 818K-25 E6327 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 25V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
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BC818K40E6327HTSA1 BC818K40E6327HTSA1 Infineon Technologies 4a-BC-817-40-E6433.pdf Description: TRANS NPN 25V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
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BC847BWE6433HTMA1 BC847BWE6433HTMA1 Infineon Technologies bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf Description: TRANS NPN 45V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BCR183UE6327HTSA1 BCR183UE6327HTSA1 Infineon Technologies bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3 Description: TRANS PREBIAS 2PNP 50V SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SC74-6
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BCV 61A E6327 BCV 61A E6327 Infineon Technologies bcv61.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449d8ff720246 Description: TRANSISTOR NPN DBL 30V SOT143-4
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Supplier Device Package: PG-SOT-143-3D
Part Status: Discontinued at Digi-Key
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BCW66KGE6327HTSA1 BCW66KGE6327HTSA1 Infineon Technologies bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07 Description: TRANS NPN 45V 0.8A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BCW 66KG E6433 BCW 66KG E6433 Infineon Technologies bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07 Description: TRANS NPN 45V 0.8A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BCW66KHE6327HTSA1 BCW66KHE6327HTSA1 Infineon Technologies bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07 Description: TRANS NPN 45V 0.8A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.085 EUR
6000+0.077 EUR
9000+0.072 EUR
15000+0.067 EUR
21000+0.064 EUR
30000+0.061 EUR
Mindestbestellmenge: 3000
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BCX5216E6433HTMA1 BCX5216E6433HTMA1 Infineon Technologies Infineon-BCX51_BCX52_BCX53-DS-v01_01-en.pdf?fileId=db3a3043156fd573011589c08423034d Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
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BF5020WE6327HTSA1 BF5020WE6327HTSA1 Infineon Technologies Description: MOSFET N-CH 8V 25MA SOT-343
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BF799E6327HTSA1 BF799E6327HTSA1 Infineon Technologies BF799.pdf Description: RF TRANS NPN 20V 800MHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Produkt ist nicht verfügbar
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BF999E6433HTMA1 BF999E6433HTMA1 Infineon Technologies bf999.pdf?folderId=db3a30431441fb5d0114936599851041&fileId=db3a30431441fb5d0114936ed6171043 Description: RF MOSFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 45MHz
Configuration: N-Channel
Gain: 27dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.1dB
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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BFP405E6740HTSA1 BFP405E6740HTSA1 Infineon Technologies BFP405_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Produkt ist nicht verfügbar
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BFP450E6433BTMA1 BFP450E6433BTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TRANS NPN 5V 24GHZ SOT-343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Obsolete
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BFR 360F E6765 BFR 360F E6765 Infineon Technologies BFR360F.pdf Description: RF TRANS NPN 9V 14GHZ TSFP-3-1
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3-1
Produkt ist nicht verfügbar
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BFR360L3E6765XTMA1 BFR360L3E6765XTMA1 Infineon Technologies bfr360l3.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431400ef6801142724646906e4 Description: RF TRANS NPN 9V 14GHZ TSLP-3-1
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Produkt ist nicht verfügbar
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BG3123E6327HTSA1 BG3123E6327HTSA1 Infineon Technologies BG 3123.pdf Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA, 20mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 25dB
Technology: MOSFET
Noise Figure: 1.8dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Produkt ist nicht verfügbar
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BG3430RE6327HTSA1 BG3430RE6327HTSA1 Infineon Technologies BG%203430R.pdf Description: MOSFET N-CH DUAL 8V 25MA SOT-363
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BG5120KE6327HTSA1 BG5120KE6327HTSA1 Infineon Technologies BG%205120K.pdf Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 20mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.1dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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BG5412KE6327HTSA1 BG5412KE6327HTSA1 Infineon Technologies BG%205412K.pdf Description: MOSFET N-CH DUAL 8V 25MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET
Noise Figure: 1.1dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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BGA 734L16 E6327 BGA 734L16 E6327 Infineon Technologies BGA 734L16.pdf Description: IC AMP UMTS 800MHZ 1.9GHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.7V ~ 3V
Gain: 16.5dB
Current - Supply: 3.4mA
Noise Figure: 1dB
P1dB: -10dBm
Test Frequency: 1.9GHz
Supplier Device Package: TSLP-16-1
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+1.21 EUR
Mindestbestellmenge: 7500
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BGA736L16E6327XTSA1 BGA736L16E6327XTSA1 Infineon Technologies BGA736L16.pdf Description: IC AMP W-CDMA 800/900MHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: W-CDMA, HSPDA
Voltage - Supply: 2.7V ~ 3V
Gain: 16.1dB
Current - Supply: 5.3mA
Noise Figure: 7.8dB
P1dB: -11dBm
Test Frequency: 1.9GHz
Supplier Device Package: TSLP-16-1
Produkt ist nicht verfügbar
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BGF 108L E6328 BGF 108L E6328 Infineon Technologies BGF108L.pdf Description: IC FILTER/ESD PROT 7CH WLP-18
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BGF109CE6328XTSA1 BGF109CE6328XTSA1 Infineon Technologies BGF109C.pdf Description: IC FILTER/ESD PROT 10CH WLP-24
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BGF 109L E6328 BGF 109L E6328 Infineon Technologies BGF109L.pdf Description: IC FILTER/ESD PROT 10CH WLP-24
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BSC014N03MS G BSC014N03MS G Infineon Technologies BSC014N03MSG_rev1.2.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304319c6f18c011a38f5a96704e8 Description: MOSFET N-CH 30V 100A TDSON-8
Produkt ist nicht verfügbar
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BSC016N04LSGATMA1 BSC016N04LSGATMA1 Infineon Technologies BSC016N04LSG_rev1.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304318a6cd680118efe284830226 Description: MOSFET N-CH 40V 31A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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BSC017N04NSGATMA1 BSC017N04NSGATMA1 Infineon Technologies BSC017N04NSG_rev1.24.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304318a6cd680118efe5d5a60236 Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
Produkt ist nicht verfügbar
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BSC018N04LSGATMA1 BSC018N04LSGATMA1 Infineon Technologies BSC018N04LSG_rev1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a30431689f4420116c42d085d0808 Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.72 EUR
Mindestbestellmenge: 5000
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ADM6996MX-AD-T-1 ADM6996M%2CI%2CLC%2CFC.pdf
ADM6996MX-AD-T-1
Hersteller: Infineon Technologies
Description: IC SWITCH ETHER 5PORT 128-FQFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Interface: Parallel
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 2.8V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AN983BX-BG-R-V1 AN983B_X.pdf
AN983BX-BG-R-V1
Hersteller: Infineon Technologies
Description: IC CTRLR LAN PCI-ETHER 128QFP
Packaging: Tape & Reel (TR)
Package / Case: 128-BFQFP
Function: Controller
Interface: PCI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Current - Supply: 150mA
Protocol: Ethernet
Standards: IEEE 802.3, 10/100 Base-T/TX PHY
Supplier Device Package: PG-PQFP-128
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAR 50-02V E6768 bar50series.pdf?folderId=db3a304314dca3890114fea780a30a91&fileId=db3a304314dca3890114fea7dd410a92
BAR 50-02V E6768
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 5V, 1MHz
Resistance @ If, F: 4.5Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAR6704E6327HTSA1 fundamentals-of-power-semiconductors
BAR6704E6327HTSA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAR 90-081LS E6327 BAR90-081LS.pdf
BAR 90-081LS E6327
Hersteller: Infineon Technologies
Description: RF DIODE PIN 80V 150MW TSSLP-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Diode Type: PIN - 4 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 1V, 1MHz
Resistance @ If, F: 800mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 80V
Supplier Device Package: TSSLP-8-1
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS116E6433HTMA1 bas116series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141c76732b0451
BAS116E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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BAS21UE6433HTMA1 Infineon-BAS21SERIES-DS-v01_01-en.pdf?fileId=5546d4624933b8750149880ded0b7e1a
BAS21UE6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 200V 250MA SC74-6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS28E6433HTMA1 bas28series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c0848da041a
BAS28E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARR GP 80V 200MA SOT1433D
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT-143-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS 3005A-02V E6327 Infineon-BAS3005ASERIES-DS-v01_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432d9b3066012db872f12d0bb7
BAS 3005A-02V E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 500MA SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS3010S02LRHE6327XTSA1 bas3010s-02lrh.pdf?folderId=db3a304313d846880113def5812204a1&fileId=db3a30431ddc9372011e24fd0b124647
BAS3010S02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 30V 1A PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 300 µA @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.18 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
BAS4002S02LRHE6327XTSA1 fundamentals-of-power-semiconductors
BAS4002S02LRHE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 200MA PGTSLP217
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-TSLP-2-17
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS 52-02V E6433 bas52series.pdf
BAS 52-02V E6433
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 45V 750MA PGSC792
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 45 V
Produkt ist nicht verfügbar
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BAT 15-02LS E6327 fundamentals-of-power-semiconductors
BAT 15-02LS E6327
Hersteller: Infineon Technologies
Description: RF DIODE SCHOTTKY 4V TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Obsolete
Current - Max: 110 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT2402LSE6327XTSA1 Infineon-BAT24-02LS-DS-v02_00-EN.pdf?fileId=5546d46265f064ff016638964eed4e95
BAT2402LSE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW TSSLP21
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.75 EUR
Mindestbestellmenge: 15000
Im Einkaufswagen  Stück im Wert von  UAH
BAT240AE6433HTMA1 fundamentals-of-power-semiconductors
BAT240AE6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 240V 400MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 400mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 240 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 400 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT5403WE6327HTSA1 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT5403WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOT 30V 200MA PGSOD3233D
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOD323-3D
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.061 EUR
6000+0.059 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BAT 54-04W E6327 BAT54_Series.pdf
BAT 54-04W E6327
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOTTKY 30V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT 63-02V E6327 bat63series.pdf?folderId=db3a304314dca389011518104e5d0df2&fileId=db3a304314dca38901151817843c0df4
BAT 63-02V E6327
Hersteller: Infineon Technologies
Description: RF DIODE SCHOTTKY 3V 100MW SC79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
Voltage - Peak Reverse (Max): 3V
Supplier Device Package: PG-SC79-2
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6405WE6327HTSA1 INFNS11551-1.pdf?t.download=true&u=5oefqw
BAT6405WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOT 40V 250MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BAV 70S E6433 bav70series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c0ba40e041d
BAV 70S E6433
Hersteller: Infineon Technologies
Description: DIODE ARR GP 80V 200MA SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Produkt ist nicht verfügbar
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BB 555 E7912 BB535%2CBB555_Series.pdf
BB 555 E7912
Hersteller: Infineon Technologies
Description: DIODE TUNING 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.8
Produkt ist nicht verfügbar
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BB 555-02V E7912 BB535%2CBB555_Series.pdf
BB 555-02V E7912
Hersteller: Infineon Technologies
Description: DIODE TUNING 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 9.8
Produkt ist nicht verfügbar
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BB639CE7908HTSA1 bb639c_bb659cseries.pdf
BB639CE7908HTSA1
Hersteller: Infineon Technologies
Description: DIODE VARIABLE 30V 20MA SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Produkt ist nicht verfügbar
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BBY5202LE6816XTMA1 bby52series.pdf
BBY5202LE6816XTMA1
Hersteller: Infineon Technologies
Description: DIODE TUNING 7V 20MA TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C4
Supplier Device Package: PG-TSLP-2-1
Voltage - Peak Reverse (Max): 7 V
Capacitance Ratio: 2.1
Produkt ist nicht verfügbar
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BC817K16E6327HTSA1 4a-BC-817-40-E6433.pdf
BC817K16E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.097 EUR
15000+0.083 EUR
30000+0.078 EUR
75000+0.073 EUR
Mindestbestellmenge: 3000
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BC817K16E6433HTMA1 4a-BC-817-40-E6433.pdf
BC817K16E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BC817K25WE6327HTSA1 bc817series_bc818series.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901154636aab91919
BC817K25WE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT-323
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC 817K-25W E6433 bc817series_bc818series.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901154636aab91919
BC 817K-25W E6433
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT-323
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817K40E6327HTSA1 4a-BC-817-40-E6433.pdf
BC817K40E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.099 EUR
6000+0.092 EUR
9000+0.076 EUR
30000+0.075 EUR
75000+0.067 EUR
Mindestbestellmenge: 3000
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BC817K40E6433HTMA1 4a-BC-817-40-E6433.pdf
BC817K40E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.076 EUR
30000+0.075 EUR
50000+0.067 EUR
Mindestbestellmenge: 10000
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BC817K40WE6327HTSA1 bc817series_bc818series.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca38901154636aab91919
BC817K40WE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.5A SOT-323
Produkt ist nicht verfügbar
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BC 818K-25 E6327 4a-BC-817-40-E6433.pdf
BC 818K-25 E6327
Hersteller: Infineon Technologies
Description: TRANS NPN 25V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BC818K40E6327HTSA1 4a-BC-817-40-E6433.pdf
BC818K40E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 25V 0.5A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BC847BWE6433HTMA1 bc846%2Cbc847%2Cbc848%2Cbc849%2Cbc850.pdf
BC847BWE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
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BCR183UE6327HTSA1 bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3
BCR183UE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS 2PNP 50V SC74
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SC74-6
Produkt ist nicht verfügbar
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BCV 61A E6327 bcv61.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449d8ff720246
BCV 61A E6327
Hersteller: Infineon Technologies
Description: TRANSISTOR NPN DBL 30V SOT143-4
Packaging: Tape & Reel (TR)
Voltage - Rated: 30V
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 100mA
Mounting Type: Surface Mount
Transistor Type: 2 NPN, Base Collector Junction
Applications: Current Mirror
Supplier Device Package: PG-SOT-143-3D
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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BCW66KGE6327HTSA1 bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07
BCW66KGE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.8A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BCW 66KG E6433 bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07
BCW 66KG E6433
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.8A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BCW66KHE6327HTSA1 bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07
BCW66KHE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.8A PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.085 EUR
6000+0.077 EUR
9000+0.072 EUR
15000+0.067 EUR
21000+0.064 EUR
30000+0.061 EUR
Mindestbestellmenge: 3000
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BCX5216E6433HTMA1 Infineon-BCX51_BCX52_BCX53-DS-v01_01-en.pdf?fileId=db3a3043156fd573011589c08423034d
BCX5216E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PNP 60V 1A PG-SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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BF5020WE6327HTSA1
BF5020WE6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 8V 25MA SOT-343
Produkt ist nicht verfügbar
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BF799E6327HTSA1 BF799.pdf
BF799E6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 20V 800MHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Produkt ist nicht verfügbar
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BF999E6433HTMA1 bf999.pdf?folderId=db3a30431441fb5d0114936599851041&fileId=db3a30431441fb5d0114936ed6171043
BF999E6433HTMA1
Hersteller: Infineon Technologies
Description: RF MOSFET 10V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 45MHz
Configuration: N-Channel
Gain: 27dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.1dB
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Voltage - Rated: 20 V
Voltage - Test: 10 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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BFP405E6740HTSA1 BFP405_Rev2013.pdf
BFP405E6740HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 23dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Produkt ist nicht verfügbar
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BFP450E6433BTMA1 fundamentals-of-power-semiconductors
BFP450E6433BTMA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 24GHZ SOT-343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 4V
Frequency - Transition: 24GHz
Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
Supplier Device Package: PG-SOT343-4-2
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFR 360F E6765 BFR360F.pdf
BFR 360F E6765
Hersteller: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ TSFP-3-1
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3-1
Produkt ist nicht verfügbar
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BFR360L3E6765XTMA1 bfr360l3.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431400ef6801142724646906e4
BFR360L3E6765XTMA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ TSLP-3-1
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB ~ 16dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSLP-3-1
Produkt ist nicht verfügbar
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BG3123E6327HTSA1 BG 3123.pdf
BG3123E6327HTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA, 20mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 25dB
Technology: MOSFET
Noise Figure: 1.8dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Produkt ist nicht verfügbar
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BG3430RE6327HTSA1 BG%203430R.pdf
BG3430RE6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH DUAL 8V 25MA SOT-363
Produkt ist nicht verfügbar
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BG5120KE6327HTSA1 BG%205120K.pdf
BG5120KE6327HTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 20mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.1dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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BG5412KE6327HTSA1 BG%205412K.pdf
BG5412KE6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH DUAL 8V 25MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET
Noise Figure: 1.1dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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BGA 734L16 E6327 BGA 734L16.pdf
BGA 734L16 E6327
Hersteller: Infineon Technologies
Description: IC AMP UMTS 800MHZ 1.9GHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.7V ~ 3V
Gain: 16.5dB
Current - Supply: 3.4mA
Noise Figure: 1dB
P1dB: -10dBm
Test Frequency: 1.9GHz
Supplier Device Package: TSLP-16-1
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+1.21 EUR
Mindestbestellmenge: 7500
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BGA736L16E6327XTSA1 BGA736L16.pdf
BGA736L16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP W-CDMA 800/900MHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: W-CDMA, HSPDA
Voltage - Supply: 2.7V ~ 3V
Gain: 16.1dB
Current - Supply: 5.3mA
Noise Figure: 7.8dB
P1dB: -11dBm
Test Frequency: 1.9GHz
Supplier Device Package: TSLP-16-1
Produkt ist nicht verfügbar
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BGF 108L E6328 BGF108L.pdf
BGF 108L E6328
Hersteller: Infineon Technologies
Description: IC FILTER/ESD PROT 7CH WLP-18
Produkt ist nicht verfügbar
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BGF109CE6328XTSA1 BGF109C.pdf
BGF109CE6328XTSA1
Hersteller: Infineon Technologies
Description: IC FILTER/ESD PROT 10CH WLP-24
Produkt ist nicht verfügbar
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BGF 109L E6328 BGF109L.pdf
BGF 109L E6328
Hersteller: Infineon Technologies
Description: IC FILTER/ESD PROT 10CH WLP-24
Produkt ist nicht verfügbar
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BSC014N03MS G BSC014N03MSG_rev1.2.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304319c6f18c011a38f5a96704e8
BSC014N03MS G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 100A TDSON-8
Produkt ist nicht verfügbar
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BSC016N04LSGATMA1 BSC016N04LSG_rev1.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304318a6cd680118efe284830226
BSC016N04LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 31A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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BSC017N04NSGATMA1 BSC017N04NSG_rev1.24.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304318a6cd680118efe5d5a60236
BSC017N04NSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
Produkt ist nicht verfügbar
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BSC018N04LSGATMA1 BSC018N04LSG_rev1.2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a30431689f4420116c42d085d0808
BSC018N04LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.72 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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