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BSC883N03MSGATMA1 BSC883N03MSGATMA1 Infineon Technologies BSC883N03MS_G.pdf Description: MOSFET N-CH 34V 19A TDSON-8
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BSC886N03LSGATMA1 BSC886N03LSGATMA1 Infineon Technologies BSC886N03LS_G.pdf Description: MOSFET N-CH 30V 13A/65A TDSON
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BSC889N03LSGATMA1 BSC889N03LSGATMA1 Infineon Technologies BSC889N03LS_G.pdf Description: MOSFET N-CH 30V 45A TDSON-8
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BSC889N03MSGATMA1 BSC889N03MSGATMA1 Infineon Technologies BSC889N03MS_G.pdf Description: MOSFET N-CH 30V 12A 44A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) 44A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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BSD214SN L6327 BSD214SN L6327 Infineon Technologies BSD214SN_Rev_2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011b01d1628230a0 Description: MOSFET N-CH 20V 1.5A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Qualification: AEC-Q101
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BSD223P L6327 BSD223P L6327 Infineon Technologies BSD223P_040702.pdf Description: MOSFET 2P-CH 20V 0.39A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 390mA
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT363-PO
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BSD235C L6327 BSD235C L6327 Infineon Technologies BSD235C_rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433580b371013585a2d0d53326 Description: MOSFET N/P-CH 20V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-PO
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BSD316SNL6327XT BSD316SNL6327XT Infineon Technologies BSD316SN_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc90c46a0521 Description: MOSFET N-CH 30V 1.4A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
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BSF045N03MQ3 G BSF045N03MQ3 G Infineon Technologies BSF045N03MQ3_G.pdf Description: MOSFET N-CH 30V 18A/63A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
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BSL202SNL6327HTSA1 BSL202SNL6327HTSA1 Infineon Technologies BSL202SN_Rev1.06.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043156fd573011622e191d41f68 Description: MOSFET N-CH 20V 7.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
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BSL205NL6327HTSA1 BSL205NL6327HTSA1 Infineon Technologies Infineon-BSL205N-DS-v02_03-en.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304342c787030142d7cdfb924d8d Description: MOSFET 2N-CH 20V 2.5A TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
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BSL207NL6327HTSA1 BSL207NL6327HTSA1 Infineon Technologies BSL207N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011aee15c15b0376 Description: MOSFET 2N-CH 20V 2.1A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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BSL214NL6327HTSA1 BSL214NL6327HTSA1 Infineon Technologies BSL214N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc5baa4504c2 Description: MOSFET 2N-CH 20V 1.5A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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BSL215CL6327HTSA1 BSL215CL6327HTSA1 Infineon Technologies BSL215C_rev2.1.pdf?folderId=db3a30431add1d95011aed428f2d0285&fileId=db3a30431add1d95011aed4394210289 Description: MOSFET N/P-CH 20V 1.5A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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BSL215PL6327HTSA1 BSL215PL6327HTSA1 Infineon Technologies BSL215P.pdf Description: MOSFET 2P-CH 20V 1.5A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSL302SNL6327HTSA1 BSL302SNL6327HTSA1 Infineon Technologies BSL302SN_Rev1.05.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043156fd573011622e9b2061f88 Description: MOSFET N-CH 30V 7.1A TSOP-6
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 2W (Ta)
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BSL306NL6327HTSA1 BSL306NL6327HTSA1 Infineon Technologies BSL306N_Rev2+2.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc80323d04f0 Description: MOSFET 2N-CH 30V 2.3A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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BSL315PL6327HTSA1 BSL315PL6327HTSA1 Infineon Technologies BSL315P.pdf Description: MOSFET 2P-CH 30V 1.5A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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BSL316CL6327HTSA1 BSL316CL6327HTSA1 Infineon Technologies BSL316C_rev2.1.pdf?folderId=db3a30431add1d95011aed428f2d0285&fileId=db3a30431add1d95011aed6aee7702ee Description: MOSFET N/P-CH 30V TSOP-6
Part Status: Obsolete
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 3.7µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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BSO033N03MSGXUMA1 BSO033N03MSGXUMA1 Infineon Technologies BSO033N03MS_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d47b2e87dc5 Description: MOSFET N-CH 30V 17A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSO051N03MS G BSO051N03MS G Infineon Technologies BSO051N03MS_G.pdf Description: MOSFET N-CH 30V 14A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 18A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
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BSO065N03MSGXUMA1 BSO065N03MSGXUMA1 Infineon Technologies BSO065N03MS_G.pdf Description: MOSFET N-CH 30V 13A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
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BSO083N03MSGXUMA1 BSO083N03MSGXUMA1 Infineon Technologies BSO083N03MS_G.pdf Description: MOSFET N-CH 30V 11A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
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BSO110N03MSGXUMA1 BSO110N03MSGXUMA1 Infineon Technologies BSO110N03MS_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d7412447e2b Description: MOSFET N-CH 30V 10A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Produkt ist nicht verfügbar
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BSO130N03MSGXUMA1 BSO130N03MSGXUMA1 Infineon Technologies BSO130N03MS_G.pdf Description: MOSFET N-CH 30V 9A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
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BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 Infineon Technologies BSO150N03MD_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d8d11687e4c Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
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BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 Infineon Technologies BSO220N03MD_rev1.1.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d922ec17e5c Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
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BSO220N03MSGXUMA1 BSO220N03MSGXUMA1 Infineon Technologies BSO220N03MS_G.pdf Description: MOSFET N-CH 30V 7A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V
Produkt ist nicht verfügbar
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BSO330N02KGFUMA1 BSO330N02KGFUMA1 Infineon Technologies BSO330N02KG.pdf Description: MOSFET 2N-CH 20V 5.4A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 20µA
Supplier Device Package: PG-DSO-8
Produkt ist nicht verfügbar
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BSP135L6433HTMA1 BSP135L6433HTMA1 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c1a8752013c1fd4c839399b Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP320SL6327HTSA1 BSP320SL6327HTSA1 Infineon Technologies BSP320S.pdf Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
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BSP320SL6433HTMA1 BSP320SL6433HTMA1 Infineon Technologies BSP320S.pdf Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP321PL6327HTSA1 BSP321PL6327HTSA1 Infineon Technologies BSP321P.pdf Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP322PL6327HTSA1 BSP322PL6327HTSA1 Infineon Technologies BSP322P.pdf Description: MOSFET P-CH 100V 1A SOT223-4
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 1V @ 380µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BSP452HUMA1 BSP452HUMA1 Infineon Technologies Infineon-BSP452-DS-v01_00-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a30431b3e89eb011b7eac4d321531&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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4000+2.28 EUR
8000+2.25 EUR
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BSP75NHUMA1 BSP75NHUMA1 Infineon Technologies Infineon-BSP75N-DS-v01_04-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f471f5a0256d1&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BSP76E6433HUMA1 BSP76E6433HUMA1 Infineon Technologies Infineon-BSP76-DS-v01_03-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043271faefd01274d00e2695d45&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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4000+1.3 EUR
8000+1.27 EUR
12000+1.26 EUR
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BSP77E6433HUMA1 BSP77E6433HUMA1 Infineon Technologies Infineon-BSP77%20E6433-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aaddd9fa44c3d Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.17A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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8000+1.48 EUR
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BSP78HUMA1 BSP78HUMA1 Infineon Technologies Infineon-BSP78-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aaddd91c74c39 Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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8000+1.67 EUR
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BSR202NL6327HTSA1 BSR202NL6327HTSA1 Infineon Technologies BSR202N_Rev1.06.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043156fd573011622e5576e1f72 Description: MOSFET N-CH 20V 3.8A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-SC59-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSR302NL6327HTSA1 BSR302NL6327HTSA1 Infineon Technologies BSR302N.pdf Description: MOSFET N-CH 30V 3.7A SC59
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SC59-3
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSR315PL6327HTSA1 BSR315PL6327HTSA1 Infineon Technologies BSR315P_Rev1.03.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42acc6143f0 Description: MOSFET P-CH 60V 620MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 620mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SC59-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 176 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSR316PL6327HTSA1 BSR316PL6327HTSA1 Infineon Technologies BSR316P_Rev1.05.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ae2bb4410 Description: MOSFET P-CH 100V 360MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 360mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 170µA
Supplier Device Package: PG-SC59-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSR802NL6327HTSA1 BSR802NL6327HTSA1 Infineon Technologies BSR802N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431b0626df011b129302297bc1 Description: MOSFET N-CH 20V 3.7A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1447 pF @ 10 V
Qualification: AEC-Q101
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9000+0.37 EUR
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BSR92PL6327HTSA1 BSR92PL6327HTSA1 Infineon Technologies BSR92P_Rev1.02.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ac3aa43e1 Description: MOSFET P-CH 250V 140MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 11Ohm @ 140mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 130µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 109 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS119L6327HTSA1 BSS119L6327HTSA1 Infineon Technologies BSS119_Rev1.3.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
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BSS119L6433HTMA1 BSS119L6433HTMA1 Infineon Technologies BSS119_Rev1.3.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
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BSS123L6433HTMA1 BSS123L6433HTMA1 Infineon Technologies DS_448_BSS123.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V
Qualification: AEC-Q101
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BSS126L6327HTSA1 BSS126L6327HTSA1 Infineon Technologies BSS126.pdf Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Qualification: AEC-Q101
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BSS126L6906HTSA1 BSS126L6906HTSA1 Infineon Technologies BSS126.pdf Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Qualification: AEC-Q101
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BSS127L6327HTSA1 BSS127L6327HTSA1 Infineon Technologies BSS127_Rev2.01.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060131049ef4883edb Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS138NL6433HTMA1 BSS138NL6433HTMA1 Infineon Technologies BSS138N_Rev2.86_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013104d944d53efb Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V
Qualification: AEC-Q101
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BSS138W L6327 BSS138W L6327 Infineon Technologies BSS138W+Rev2.43.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304335113a6301351e62fcb4131f Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS138W L6433 BSS138W L6433 Infineon Technologies BSS138W+Rev2.43.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304335113a6301351e62fcb4131f Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS139L6327HTSA1 BSS139L6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 0.1mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Qualification: AEC-Q101
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BSS139L6906HTSA1 BSS139L6906HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 250V 100MA SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1V @ 56µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 0.1mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel, Depletion Mode
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BSS159NL6327HTSA1 BSS159NL6327HTSA1 Infineon Technologies BSS159N.pdf Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSS159NL6906HTSA1 BSS159NL6906HTSA1 Infineon Technologies BSS159N.pdf Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSS169L6327HTSA1 BSS169L6327HTSA1 Infineon Technologies BSS169.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSS169L6906HTSA1 BSS169L6906HTSA1 Infineon Technologies BSS169.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSC883N03MSGATMA1 BSC883N03MS_G.pdf
BSC883N03MSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 34V 19A TDSON-8
Produkt ist nicht verfügbar
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BSC886N03LSGATMA1 BSC886N03LS_G.pdf
BSC886N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A/65A TDSON
Produkt ist nicht verfügbar
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BSC889N03LSGATMA1 BSC889N03LS_G.pdf
BSC889N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 45A TDSON-8
Produkt ist nicht verfügbar
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BSC889N03MSGATMA1 BSC889N03MS_G.pdf
BSC889N03MSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A 44A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta) 44A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
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BSD214SN L6327 BSD214SN_Rev_2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011b01d1628230a0
BSD214SN L6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 1.5A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSD223P L6327 BSD223P_040702.pdf
BSD223P L6327
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 0.39A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 390mA
Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT363-PO
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BSD235C L6327 BSD235C_rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433580b371013585a2d0d53326
BSD235C L6327
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 20V SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-PO
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BSD316SNL6327XT BSD316SN_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc90c46a0521
BSD316SNL6327XT
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 1.4A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 94 pF @ 15 V
Produkt ist nicht verfügbar
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BSF045N03MQ3 G BSF045N03MQ3_G.pdf
BSF045N03MQ3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/63A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Produkt ist nicht verfügbar
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BSL202SNL6327HTSA1 BSL202SN_Rev1.06.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043156fd573011622e191d41f68
BSL202SNL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 7.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Produkt ist nicht verfügbar
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BSL205NL6327HTSA1 Infineon-BSL205N-DS-v02_03-en.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304342c787030142d7cdfb924d8d
BSL205NL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.5A TSOP6-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-TSOP6-6
Produkt ist nicht verfügbar
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BSL207NL6327HTSA1 BSL207N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011aee15c15b0376
BSL207NL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 2.1A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.1A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSL214NL6327HTSA1 BSL214N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc5baa4504c2
BSL214NL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 1.5A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSL215CL6327HTSA1 BSL215C_rev2.1.pdf?folderId=db3a30431add1d95011aed428f2d0285&fileId=db3a30431add1d95011aed4394210289
BSL215CL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 20V 1.5A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.73nC @ 4.5V
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSL215PL6327HTSA1 BSL215P.pdf
BSL215PL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 1.5A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 3.55nC @ 4.5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 346pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSL302SNL6327HTSA1 BSL302SN_Rev1.05.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043156fd573011622e9b2061f88
BSL302SNL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 7.1A TSOP-6
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 2W (Ta)
Produkt ist nicht verfügbar
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BSL306NL6327HTSA1 BSL306N_Rev2+2.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431add1d95011afc80323d04f0
BSL306NL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 2.3A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 5V
Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSL315PL6327HTSA1 BSL315P.pdf
BSL315PL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 1.5A TSOP6-6
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 11µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 5V
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 282pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSL316CL6327HTSA1 BSL316C_rev2.1.pdf?folderId=db3a30431add1d95011aed428f2d0285&fileId=db3a30431add1d95011aed6aee7702ee
BSL316CL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V TSOP-6
Part Status: Obsolete
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 3.7µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSO033N03MSGXUMA1 BSO033N03MS_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d47b2e87dc5
BSO033N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.39 EUR
5000+1.32 EUR
12500+1.27 EUR
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BSO051N03MS G BSO051N03MS_G.pdf
BSO051N03MS G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 18A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Produkt ist nicht verfügbar
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BSO065N03MSGXUMA1 BSO065N03MS_G.pdf
BSO065N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 16A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 15 V
Produkt ist nicht verfügbar
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BSO083N03MSGXUMA1 BSO083N03MS_G.pdf
BSO083N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
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BSO110N03MSGXUMA1 BSO110N03MS_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d7412447e2b
BSO110N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
Produkt ist nicht verfügbar
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BSO130N03MSGXUMA1 BSO130N03MS_G.pdf
BSO130N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 9A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
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BSO150N03MDGXUMA1 BSO150N03MD_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d8d11687e4c
BSO150N03MDGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.73 EUR
Mindestbestellmenge: 2500 Stücke
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BSO220N03MDGXUMA1 BSO220N03MD_rev1.1.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d922ec17e5c
BSO220N03MDGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.55 EUR
5000+0.5 EUR
7500+0.49 EUR
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BSO220N03MSGXUMA1 BSO220N03MS_G.pdf
BSO220N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 7A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8.6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 15 V
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BSO330N02KGFUMA1 BSO330N02KG.pdf
BSO330N02KGFUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 5.4A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.4A
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 20µA
Supplier Device Package: PG-DSO-8
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BSP135L6433HTMA1 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c1a8752013c1fd4c839399b
BSP135L6433HTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
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BSP320SL6327HTSA1 BSP320S.pdf
BSP320SL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
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BSP320SL6433HTMA1 BSP320S.pdf
BSP320SL6433HTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Qualification: AEC-Q101
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BSP321PL6327HTSA1 BSP321P.pdf
BSP321PL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
Qualification: AEC-Q101
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BSP322PL6327HTSA1 BSP322P.pdf
BSP322PL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 1A SOT223-4
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 1V @ 380µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
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BSP452HUMA1 Infineon-BSP452-DS-v01_00-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a30431b3e89eb011b7eac4d321531&ack=t
BSP452HUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 112000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+2.28 EUR
8000+2.25 EUR
Mindestbestellmenge: 4000 Stücke
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BSP75NHUMA1 Infineon-BSP75N-DS-v01_04-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f471f5a0256d1&ack=t
BSP75NHUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Not For New Designs
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BSP76E6433HUMA1 Infineon-BSP76-DS-v01_03-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043271faefd01274d00e2695d45&ack=t
BSP76E6433HUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.3 EUR
8000+1.27 EUR
12000+1.26 EUR
Mindestbestellmenge: 4000 Stücke
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BSP77E6433HUMA1 Infineon-BSP77%20E6433-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aaddd9fa44c3d
BSP77E6433HUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.17A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.51 EUR
8000+1.48 EUR
Mindestbestellmenge: 4000 Stücke
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BSP78HUMA1 Infineon-BSP78-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aaddd91c74c39
BSP78HUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+1.69 EUR
8000+1.67 EUR
Mindestbestellmenge: 4000 Stücke
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BSR202NL6327HTSA1 BSR202N_Rev1.06.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043156fd573011622e5576e1f72
BSR202NL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 3.8A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-SC59-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSR302NL6327HTSA1 BSR302N.pdf
BSR302NL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 3.7A SC59
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SC59-3
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSR315PL6327HTSA1 BSR315P_Rev1.03.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42acc6143f0
BSR315PL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 620MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 620mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 620mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SC59-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 176 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSR316PL6327HTSA1 BSR316P_Rev1.05.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ae2bb4410
BSR316PL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 360MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 360mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 170µA
Supplier Device Package: PG-SC59-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSR802NL6327HTSA1 BSR802N_Rev2.1.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30431b0626df011b129302297bc1
BSR802NL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 3.7A SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3.7A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 750mV @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1447 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.42 EUR
9000+0.37 EUR
Mindestbestellmenge: 3000 Stücke
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BSR92PL6327HTSA1 BSR92P_Rev1.02.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42ac3aa43e1
BSR92PL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 250V 140MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 11Ohm @ 140mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 130µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 109 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS119L6327HTSA1 BSS119_Rev1.3.pdf
BSS119L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Produkt ist nicht verfügbar
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BSS119L6433HTMA1 BSS119_Rev1.3.pdf
BSS119L6433HTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Produkt ist nicht verfügbar
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BSS123L6433HTMA1 DS_448_BSS123.pdf
BSS123L6433HTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS126L6327HTSA1 BSS126.pdf
BSS126L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS126L6906HTSA1 BSS126.pdf
BSS126L6906HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS127L6327HTSA1 BSS127_Rev2.01.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f686060131049ef4883edb
BSS127L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 8µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS138NL6433HTMA1 BSS138N_Rev2.86_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013104d944d53efb
BSS138NL6433HTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS138W L6327 BSS138W+Rev2.43.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304335113a6301351e62fcb4131f
BSS138W L6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS138W L6433 BSS138W+Rev2.43.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304335113a6301351e62fcb4131f
BSS138W L6433
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS139L6327HTSA1 fundamentals-of-power-semiconductors
BSS139L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 0.1mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 56µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS139L6906HTSA1 fundamentals-of-power-semiconductors
BSS139L6906HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 100MA SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 5 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1V @ 56µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 0.1mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel, Depletion Mode
Produkt ist nicht verfügbar
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BSS159NL6327HTSA1 BSS159N.pdf
BSS159NL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BSS159NL6906HTSA1 BSS159N.pdf
BSS159NL6906HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 160mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 26µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 44 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BSS169L6327HTSA1 BSS169.pdf
BSS169L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BSS169L6906HTSA1 BSS169.pdf
BSS169L6906HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 68 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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