Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (127270) > Seite 142 nach 2122
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IRFH7921TR2PBF | Infineon Technologies |
 Description: MOSFET N-CH 30V 15A/34A PQFNInput Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PQFN (5x6) Single Die Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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IRFH7932TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 24A PQFN56 Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Part Status: Obsolete Supplier Device Package: PQFN (5x6) Single Die Vgs(th) (Max) @ Id: 2.35V @ 100µA Power Dissipation (Max): 3.4W (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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IRFH7936TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 20A PQFN56 Drain to Source Voltage (Vdss): 30 V Part Status: Obsolete Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 2.35V @ 50µA Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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IRFS3004TRL7PP | Infineon Technologies |
Description: MOSFET N-CH 40V 240A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.25mOhm @ 195A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 25 V |
auf Bestellung 1604 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS3004TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Ta) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRFS3006TRL7PP | Infineon Technologies |
Description: MOSFET N-CH 60V 240A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V |
auf Bestellung 4395 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS3006TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 195A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V |
auf Bestellung 4503 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS3107TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 75V 195A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V |
auf Bestellung 8842 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS4010TRL7PP | Infineon Technologies |
Description: MOSFET N-CH 100V 190A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFS4010TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 180A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V |
auf Bestellung 5897 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS4020TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 18A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 11A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4.9V @ 100µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V |
Produkt ist nicht verfügbar |
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IRFS4127TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 200V 72A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V |
auf Bestellung 3159 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFS4615TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 33A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V Power Dissipation (Max): 144W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V |
auf Bestellung 2411 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLR3636TRPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 50A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V Power Dissipation (Max): 143W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 100µA Supplier Device Package: TO-252AA (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V |
auf Bestellung 8684 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLS3034TRL7PP | Infineon Technologies |
Description: MOSFET N-CH 40V 240A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V |
Produkt ist nicht verfügbar |
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IRLS3034TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V |
auf Bestellung 9072 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLS3036TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 195A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V |
auf Bestellung 4400 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLS4030TRL7PP | Infineon Technologies |
Description: MOSFET N-CH 100V 190A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLS4030TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 180A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V |
auf Bestellung 5086 Stücke: Lieferzeit 10-14 Tag (e) |
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CY2CC910OXI-1 | Infineon Technologies |
Description: IC CLK BUFFER 1:10 650MHZ 20SSOP Frequency - Max: 650 MHz Supplier Device Package: 20-SSOP Differential - Input:Output: No/No Ratio - Input:Output: 1:10 Voltage - Supply: 1.71V ~ 3.465V Operating Temperature: -40°C ~ 85°C Input: AVCMOS Type: Fanout Buffer (Distribution) Output: AVCMOS Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 20-SSOP (0.209", 5.30mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 132 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CY2CC910OXI-1T | Infineon Technologies |
Description: IC CLK BUFFER 1:10 650MHZ 20SSOP Frequency - Max: 650 MHz Supplier Device Package: 20-SSOP Differential - Input:Output: No/No Ratio - Input:Output: 1:10 Voltage - Supply: 1.71V ~ 3.465V Operating Temperature: -40°C ~ 85°C Input: AVCMOS Type: Fanout Buffer (Distribution) Output: AVCMOS Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 20-SSOP (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| CY7C10612DV33-10ZSXIT | Infineon Technologies |
Description: IC SRAM 16MBIT PAR 54TSOP II Packaging: Tape & Reel (TR) Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 54-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY7C1306CV25-167BZC | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 165FBGA DigiKey Programmable: Not Verified Memory Organization: 512K x 36 Memory Interface: Parallel Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 167 MHz Technology: SRAM - Synchronous, QDR Voltage - Supply: 2.4V ~ 2.6V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 18Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray |
Produkt ist nicht verfügbar |
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CY7C1315JV18-300BZC | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGA DigiKey Programmable: Not Verified Memory Organization: 512K x 36 Memory Interface: Parallel Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 300 MHz Technology: SRAM - Synchronous, QDR II Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 18Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray |
Produkt ist nicht verfügbar |
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CY7C1423JV18-250BZXC | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGA Memory Organization: 2M x 18 Memory Interface: Parallel Part Status: Obsolete Supplier Device Package: 165-FBGA (15x17) Memory Format: SRAM Clock Frequency: 250 MHz Technology: SRAM - Synchronous, DDR II Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 36Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray |
Produkt ist nicht verfügbar |
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CY7C1423JV18-267BZXCT | Infineon Technologies |
Description: IC SRAM 36MBIT PAR 165FBGA Memory Organization: 2M x 18 Memory Interface: Parallel Part Status: Obsolete Supplier Device Package: 165-FBGA (15x17) Memory Format: SRAM Clock Frequency: 267 MHz Technology: SRAM - Synchronous, DDR II Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 36Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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CY8C20434-12LQXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFN Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 512 x 8 Program Memory Size: 8KB (8K x 8) Speed: 12MHz Mounting Type: Surface Mount Package / Case: 32-UFQFN Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Number of I/O: 28 Supplier Device Package: 32-QFN (5x5) Peripherals: LVD, POR, WDT Connectivity: I2C, SPI Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Core Size: 8-Bit Core Processor: M8C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CY8C24633-24PVXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 28SSOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CYONS2000-LBXC | Infineon Technologies |
Description: SENSOR OPT 42 BQFN MODULE Part Status: Obsolete Supplier Device Package: 42-PQFN (8.3x8.3) Mounting Type: Surface Mount Package / Case: 42-BQFN Module Packaging: Tray |
Produkt ist nicht verfügbar |
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CYONS2001-LBXC | Infineon Technologies |
Description: SENSOR OPT 42 BQFN MODULE Part Status: Obsolete Supplier Device Package: 42-PQFN (8.3x8.3) Mounting Type: Surface Mount Package / Case: 42-BQFN Module Packaging: Tray |
Produkt ist nicht verfügbar |
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CYONS2100-LBXC | Infineon Technologies |
Description: SENSOR OPT 42 BQFN MODULE Part Status: Obsolete Supplier Device Package: 42-PQFN (8.3x8.3) Mounting Type: Surface Mount Package / Case: 42-BQFN Module Packaging: Tray |
Produkt ist nicht verfügbar |
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CYONS2101-LBXC | Infineon Technologies |
Description: SENSOR OPT 42 BQFN MODULE Part Status: Obsolete Supplier Device Package: 42-PQFN (8.3x8.3) Mounting Type: Surface Mount Package / Case: 42-BQFN Module Packaging: Tray |
Produkt ist nicht verfügbar |
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CYONS2110-LBXC | Infineon Technologies |
Description: SENSOR OPT 42 BQFN MODULE Part Status: Obsolete Supplier Device Package: 42-PQFN (8.3x8.3) Mounting Type: Surface Mount Package / Case: 42-BQFN Module Packaging: Tray |
Produkt ist nicht verfügbar |
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CYWB0224ABM-BVXI | Infineon Technologies |
Description: IC WEST BRIDGE HS-USB 100VFBGA Packaging: Tray Package / Case: 100-VFBGA Function: Controller Interface: Parallel Voltage - Supply: 1.8V ~ 3.3V Protocol: USB, Memory Card Standards: USB 2.0 Supplier Device Package: 100-VFBGA (6x6) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CYWB0224ABMX-FDXIT | Infineon Technologies |
Description: IC WEST BRIDGE HS-USB 81-WLCSP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CYWB0224ABS-BVXIT | Infineon Technologies |
Description: IC WEST BRIDGE HS-USB 100VFBGA Function: Controller Package / Case: 100-VFBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Supplier Device Package: 100-VFBGA (6x6) Standards: USB 2.0 Protocol: USB, Memory Card Voltage - Supply: 1.8V ~ 3.3V Interface: Parallel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CYWB0226ABMX-FDXIT | Infineon Technologies |
Description: IC WEST BRIDGE HS-USB 81-WLCSP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CYWB0226ABS-BVXIT | Infineon Technologies |
Description: IC WEST BRIDGE HS-USB 100VFBGA DigiKey Programmable: Not Verified Supplier Device Package: 100-VFBGA (6x6) Standards: USB 2.0 Protocol: USB, Memory Card Voltage - Supply: 1.8V ~ 3.3V Interface: Parallel Function: Controller Package / Case: 100-VFBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF1404ZGPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 180A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF7665S2TR1PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 4.1A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V Power Dissipation (Max): 2.4W (Ta), 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 25µA Supplier Device Package: DIRECTFET SB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF8707GTRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 11A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF8714GTRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF8721GTRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRFB3004GPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 195A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V Power Dissipation (Max): 380W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRFB3006GPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 195A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRGI4056DPBF | Infineon Technologies |
Description: IGBT TRENCH 600V 18A TO220AB FP Power - Max: 34 W Current - Collector Pulsed (Icm): 27 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 18 A Gate Charge: 25 nC Test Condition: 400V, 9A, 22Ohm, 15V Switching Energy: 59µJ (on), 177µJ (off) Td (on/off) @ 25°C: 34ns/84ns IGBT Type: Trench Supplier Device Package: TO-220AB Full-Pak Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 9A Reverse Recovery Time (trr): 72 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 150 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRLB3813PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 260A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 60A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 15 V |
auf Bestellung 8766 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF8707GPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 11A 8SO Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF8714GPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SO Vgs(th) (Max) @ Id: 2.35V @ 25µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF8721GPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 14A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF6718L2TR1PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 61A DIRECTFET Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DIRECTFET L6 Vgs(th) (Max) @ Id: 2.35V @ 150µA Power Dissipation (Max): 4.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric L6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF6718L2TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 61A DIRECTFET Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: DIRECTFET L6 Vgs(th) (Max) @ Id: 2.35V @ 150µA Power Dissipation (Max): 4.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DirectFET™ Isometric L6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AGIGA8003-004ACA | Infineon Technologies |
Description: MODUL NVRAM 4MB 100MHZ 200SODIMM Transfer Rate (Mb/s, MT/s, MHz): 100 Part Status: Obsolete Memory Type: NVRAM Memory Size: 4MB Package / Case: 200-SODIMM Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AGIGA8004-008ACA | Infineon Technologies |
Description: MODUL NVRAM 8MB 100MHZ 200SODIMM Transfer Rate (Mb/s, MT/s, MHz): 100 Part Status: Obsolete Memory Type: NVRAM Memory Size: 8MB Package / Case: 200-SODIMM Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AGIGA8005-016ACA | Infineon Technologies |
Description: MODULE NVRAM 16MB 200SODIMM Transfer Rate (Mb/s, MT/s, MHz): 100 Part Status: Obsolete Memory Type: NVRAM Memory Size: 16MB Package / Case: 200-SODIMM Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AGIGA8006-032ACA | Infineon Technologies |
Description: MODULE NVRAM 32MB 200SODIMM Transfer Rate (Mb/s, MT/s, MHz): 100 Part Status: Obsolete Memory Type: NVRAM Memory Size: 32MB Package / Case: 200-SODIMM Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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AGIGA8007-064ACA | Infineon Technologies |
Description: MODULE NVRAM 64MB 200SODIMM Transfer Rate (Mb/s, MT/s, MHz): 100 Part Status: Obsolete Memory Type: NVRAM Memory Size: 64MB Package / Case: 200-SODIMM Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CY24293ZXCT | Infineon Technologies |
Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CY24378ZXC | Infineon Technologies |
Description: IC CLK BUFFER 2PR 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tube DigiKey Programmable: Not Verified Supplier Device Package: 16-TSSOP Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CY26121KZI-21 | Infineon Technologies |
Description: IC FANOUT DIST 16TSSOP Frequency - Max: 33.33MHz Output: Clock Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tube DigiKey Programmable: Not Verified Number of Circuits: 1 Divider/Multiplier: Yes/No PLL: Yes with Bypass Supplier Device Package: 16-TSSOP Differential - Input:Output: No/No Ratio - Input:Output: 1:5 Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: -40°C ~ 85°C Input: Clock, Crystal Type: Fanout Distribution, Multiplexer, Spread Spectrum Clock Generator |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRFH7921TR2PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 15A/34A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PQFN (5x6) Single Die
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 15A/34A PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PQFN (5x6) Single Die
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7932TR2PBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 24A PQFN56
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6) Single Die
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 3.4W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 24A PQFN56
Input Capacitance (Ciss) (Max) @ Vds: 4270 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: PQFN (5x6) Single Die
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Power Dissipation (Max): 3.4W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 104A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFH7936TR2PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A PQFN56
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Description: MOSFET N-CH 30V 20A PQFN56
Drain to Source Voltage (Vdss): 30 V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.35V @ 50µA
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS3004TRL7PP |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 25 V
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 25 V
auf Bestellung 1604 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.96 EUR |
| 10+ | 5.91 EUR |
| 50+ | 4.59 EUR |
| 100+ | 3.94 EUR |
| IRFS3004TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Ta)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Ta)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS3006TRL7PP |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
Description: MOSFET N-CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
auf Bestellung 4395 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.26 EUR |
| 10+ | 5.45 EUR |
| 100+ | 4.47 EUR |
| IRFS3006TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
auf Bestellung 4503 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.33 EUR |
| 10+ | 5.49 EUR |
| 100+ | 3.87 EUR |
| IRFS3107TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
Description: MOSFET N-CH 75V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 140A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9370 pF @ 50 V
auf Bestellung 8842 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10 EUR |
| 10+ | 6.64 EUR |
| 100+ | 4.74 EUR |
| IRFS4010TRL7PP |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
Description: MOSFET N-CH 100V 190A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS4010TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
auf Bestellung 5897 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.08 EUR |
| 10+ | 4.63 EUR |
| 100+ | 3.24 EUR |
| IRFS4020TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 11A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 11A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.9V @ 100µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFS4127TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
Description: MOSFET N-CH 200V 72A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 44A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 50 V
auf Bestellung 3159 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.31 EUR |
| 10+ | 4.8 EUR |
| 100+ | 3.36 EUR |
| IRFS4615TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Description: MOSFET N-CH 150V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
auf Bestellung 2411 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.62 EUR |
| 10+ | 3.63 EUR |
| 100+ | 2.5 EUR |
| IRLR3636TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
Description: MOSFET N-CH 60V 50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
auf Bestellung 8684 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.13 EUR |
| 10+ | 2.63 EUR |
| 50+ | 1.99 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.42 EUR |
| IRLS3034TRL7PP |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10990 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRLS3034TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
auf Bestellung 9072 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.02 EUR |
| 10+ | 4.58 EUR |
| 50+ | 3.55 EUR |
| 100+ | 3.2 EUR |
| IRLS3036TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
Description: MOSFET N-CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11210 pF @ 50 V
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.57 EUR |
| 10+ | 5.65 EUR |
| 50+ | 4.39 EUR |
| 100+ | 4 EUR |
| IRLS4030TRL7PP |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 190A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V
Description: MOSFET N-CH 100V 190A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11490 pF @ 50 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10 EUR |
| IRLS4030TRLPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11360 pF @ 50 V
auf Bestellung 5086 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.48 EUR |
| 10+ | 6.3 EUR |
| 50+ | 4.91 EUR |
| 100+ | 4.47 EUR |
| CY2CC910OXI-1 |
|
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 1:10 650MHZ 20SSOP
Frequency - Max: 650 MHz
Supplier Device Package: 20-SSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:10
Voltage - Supply: 1.71V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: AVCMOS
Type: Fanout Buffer (Distribution)
Output: AVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tube
Description: IC CLK BUFFER 1:10 650MHZ 20SSOP
Frequency - Max: 650 MHz
Supplier Device Package: 20-SSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:10
Voltage - Supply: 1.71V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: AVCMOS
Type: Fanout Buffer (Distribution)
Output: AVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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| CY2CC910OXI-1T |
|
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 1:10 650MHZ 20SSOP
Frequency - Max: 650 MHz
Supplier Device Package: 20-SSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:10
Voltage - Supply: 1.71V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: AVCMOS
Type: Fanout Buffer (Distribution)
Output: AVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC CLK BUFFER 1:10 650MHZ 20SSOP
Frequency - Max: 650 MHz
Supplier Device Package: 20-SSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:10
Voltage - Supply: 1.71V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: AVCMOS
Type: Fanout Buffer (Distribution)
Output: AVCMOS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| CY7C10612DV33-10ZSXIT |
Hersteller: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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Stück im Wert von UAH
| CY7C1306CV25-167BZC |
|
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 167 MHz
Technology: SRAM - Synchronous, QDR
Voltage - Supply: 2.4V ~ 2.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Description: IC SRAM 18MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 167 MHz
Technology: SRAM - Synchronous, QDR
Voltage - Supply: 2.4V ~ 2.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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| CY7C1315JV18-300BZC |
|
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Description: IC SRAM 18MBIT PARALLEL 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY7C1423JV18-250BZXC |
|
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Memory Organization: 2M x 18
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Description: IC SRAM 36MBIT PAR 165FBGA
Memory Organization: 2M x 18
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CY7C1423JV18-267BZXCT |
|
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PAR 165FBGA
Memory Organization: 2M x 18
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 267 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tape & Reel (TR)
Description: IC SRAM 36MBIT PAR 165FBGA
Memory Organization: 2M x 18
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (15x17)
Memory Format: SRAM
Clock Frequency: 267 MHz
Technology: SRAM - Synchronous, DDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 36Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C20434-12LQXIT |
|
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Peripherals: LVD, POR, WDT
Connectivity: I2C, SPI
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Core Processor: M8C
Description: IC MCU 8BIT 8KB FLASH 32QFN
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 12MHz
Mounting Type: Surface Mount
Package / Case: 32-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 28
Supplier Device Package: 32-QFN (5x5)
Peripherals: LVD, POR, WDT
Connectivity: I2C, SPI
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Core Size: 8-Bit
Core Processor: M8C
Produkt ist nicht verfügbar
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| CY8C24633-24PVXIT |
|
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| CYONS2000-LBXC |
Hersteller: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CYONS2001-LBXC |
Hersteller: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CYONS2100-LBXC |
|
Hersteller: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CYONS2101-LBXC |
Hersteller: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CYONS2110-LBXC |
Hersteller: Infineon Technologies
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Description: SENSOR OPT 42 BQFN MODULE
Part Status: Obsolete
Supplier Device Package: 42-PQFN (8.3x8.3)
Mounting Type: Surface Mount
Package / Case: 42-BQFN Module
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CYWB0224ABM-BVXI |
|
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
Description: IC WEST BRIDGE HS-USB 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 100-VFBGA (6x6)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CYWB0224ABMX-FDXIT |
|
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
Description: IC WEST BRIDGE HS-USB 81-WLCSP
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Im Einkaufswagen
Stück im Wert von UAH
| CYWB0224ABS-BVXIT |
|
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 100VFBGA
Function: Controller
Package / Case: 100-VFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Supplier Device Package: 100-VFBGA (6x6)
Standards: USB 2.0
Protocol: USB, Memory Card
Voltage - Supply: 1.8V ~ 3.3V
Interface: Parallel
Description: IC WEST BRIDGE HS-USB 100VFBGA
Function: Controller
Package / Case: 100-VFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Supplier Device Package: 100-VFBGA (6x6)
Standards: USB 2.0
Protocol: USB, Memory Card
Voltage - Supply: 1.8V ~ 3.3V
Interface: Parallel
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CYWB0226ABMX-FDXIT |
|
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
Description: IC WEST BRIDGE HS-USB 81-WLCSP
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CYWB0226ABS-BVXIT |
|
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 100VFBGA
DigiKey Programmable: Not Verified
Supplier Device Package: 100-VFBGA (6x6)
Standards: USB 2.0
Protocol: USB, Memory Card
Voltage - Supply: 1.8V ~ 3.3V
Interface: Parallel
Function: Controller
Package / Case: 100-VFBGA
Packaging: Tape & Reel (TR)
Description: IC WEST BRIDGE HS-USB 100VFBGA
DigiKey Programmable: Not Verified
Supplier Device Package: 100-VFBGA (6x6)
Standards: USB 2.0
Protocol: USB, Memory Card
Voltage - Supply: 1.8V ~ 3.3V
Interface: Parallel
Function: Controller
Package / Case: 100-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| IRF1404ZGPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Description: MOSFET N-CH 40V 180A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 220W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
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| IRF7665S2TR1PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 4.1A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
Description: MOSFET N-CH 100V 4.1A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 14.4A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: DIRECTFET SB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF8707GTRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF8714GTRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF8721GTRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IRFB3004GPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Description: MOSFET N-CH 40V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFB3006GPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
Description: MOSFET N-CH 60V 195A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 170A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| IRGI4056DPBF |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 18A TO220AB FP
Power - Max: 34 W
Current - Collector Pulsed (Icm): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 18 A
Gate Charge: 25 nC
Test Condition: 400V, 9A, 22Ohm, 15V
Switching Energy: 59µJ (on), 177µJ (off)
Td (on/off) @ 25°C: 34ns/84ns
IGBT Type: Trench
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 9A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: IGBT TRENCH 600V 18A TO220AB FP
Power - Max: 34 W
Current - Collector Pulsed (Icm): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 18 A
Gate Charge: 25 nC
Test Condition: 400V, 9A, 22Ohm, 15V
Switching Energy: 59µJ (on), 177µJ (off)
Td (on/off) @ 25°C: 34ns/84ns
IGBT Type: Trench
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 9A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 150 Stücke
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Stück im Wert von UAH
| IRLB3813PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 260A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 60A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 15 V
Description: MOSFET N-CH 30V 260A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 60A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8420 pF @ 15 V
auf Bestellung 8766 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.15 EUR |
| 10+ | 3.32 EUR |
| 50+ | 2.53 EUR |
| 100+ | 2.27 EUR |
| 500+ | 1.83 EUR |
| IRF8707GPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 30V 11A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF8714GPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Description: MOSFET N-CH 30V 14A 8SO
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF8721GPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IRF6718L2TR1PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 61A DIRECTFET
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET L6
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V
Description: MOSFET N-CH 25V 61A DIRECTFET
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET L6
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| IRF6718L2TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 61A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET L6
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L6
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 61A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DIRECTFET L6
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Power Dissipation (Max): 4.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 61A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 270A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric L6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| AGIGA8003-004ACA |
Hersteller: Infineon Technologies
Description: MODUL NVRAM 4MB 100MHZ 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 4MB
Package / Case: 200-SODIMM
Packaging: Box
Description: MODUL NVRAM 4MB 100MHZ 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 4MB
Package / Case: 200-SODIMM
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AGIGA8004-008ACA |
Hersteller: Infineon Technologies
Description: MODUL NVRAM 8MB 100MHZ 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 8MB
Package / Case: 200-SODIMM
Packaging: Box
Description: MODUL NVRAM 8MB 100MHZ 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 8MB
Package / Case: 200-SODIMM
Packaging: Box
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| AGIGA8005-016ACA |
Hersteller: Infineon Technologies
Description: MODULE NVRAM 16MB 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 16MB
Package / Case: 200-SODIMM
Packaging: Box
Description: MODULE NVRAM 16MB 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 16MB
Package / Case: 200-SODIMM
Packaging: Box
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| AGIGA8006-032ACA |
Hersteller: Infineon Technologies
Description: MODULE NVRAM 32MB 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 32MB
Package / Case: 200-SODIMM
Packaging: Box
Description: MODULE NVRAM 32MB 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 32MB
Package / Case: 200-SODIMM
Packaging: Box
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| AGIGA8007-064ACA |
Hersteller: Infineon Technologies
Description: MODULE NVRAM 64MB 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 64MB
Package / Case: 200-SODIMM
Packaging: Box
Description: MODULE NVRAM 64MB 200SODIMM
Transfer Rate (Mb/s, MT/s, MHz): 100
Part Status: Obsolete
Memory Type: NVRAM
Memory Size: 64MB
Package / Case: 200-SODIMM
Packaging: Box
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| CY24293ZXCT |
|
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP
Description: IC CLK BUFFER 2PR 3.3V 16-TSSOP
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| CY24378ZXC |
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 2PR 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Supplier Device Package: 16-TSSOP
Mounting Type: Surface Mount
Description: IC CLK BUFFER 2PR 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Supplier Device Package: 16-TSSOP
Mounting Type: Surface Mount
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| CY26121KZI-21 |
|
Hersteller: Infineon Technologies
Description: IC FANOUT DIST 16TSSOP
Frequency - Max: 33.33MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 16-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: Clock, Crystal
Type: Fanout Distribution, Multiplexer, Spread Spectrum Clock Generator
Description: IC FANOUT DIST 16TSSOP
Frequency - Max: 33.33MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 16-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:5
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Input: Clock, Crystal
Type: Fanout Distribution, Multiplexer, Spread Spectrum Clock Generator
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