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BFP650H6327XTSA1 BFP650H6327XTSA1 Infineon Technologies Infineon-BFP650-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03d00e3930 Description: RF TRANS NPN 4.5V 37GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 147000 Stücke:
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3000+0.27 EUR
6000+0.26 EUR
21000+0.25 EUR
Mindestbestellmenge: 3000
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BFR181WH6327XTSA1 BFR181WH6327XTSA1 Infineon Technologies bfr181w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268dc6c1063f Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.08 EUR
6000+0.08 EUR
9000+0.07 EUR
15000+0.07 EUR
21000+0.07 EUR
30000+0.07 EUR
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BFR182WH6327XTSA1 BFR182WH6327XTSA1 Infineon Technologies bfr182w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114269d1e43064c Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
auf Bestellung 12000 Stücke:
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BFR183WH6327XTSA1 BFR183WH6327XTSA1 Infineon Technologies BFR183W.pdf Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Produkt ist nicht verfügbar
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BFR193FH6327XTSA1 BFR193FH6327XTSA1 Infineon Technologies bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c Description: RF TRANS NPN 12V 8GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
auf Bestellung 21000 Stücke:
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3000+0.13 EUR
15000+0.12 EUR
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BFR193WH6327XTSA1 BFR193WH6327XTSA1 Infineon Technologies bfr193w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426b3b6650674 Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
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3000+0.12 EUR
21000+0.11 EUR
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BFR340FH6327XTSA1 BFR340FH6327XTSA1 Infineon Technologies Infineon-BFR340F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03e34d3934 Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 28dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
Produkt ist nicht verfügbar
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BFR360FH6327XTSA1 BFR360FH6327XTSA1 Infineon Technologies Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920 Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
auf Bestellung 21000 Stücke:
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3000+0.12 EUR
15000+0.11 EUR
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BFR720L3RHE6327XTSA1 BFR720L3RHE6327XTSA1 Infineon Technologies Infineon+SiGe+LNA+BFR720L3RH+Rev_2.pdf?folderId=db3a30431400ef68011425b291f205c5&fileId=db3a30431ddc9372011e2677fc1e4740 Description: TRANS RF NPN 4V 20MA TSLP-3
Produkt ist nicht verfügbar
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BFR92WH6327XTSA1 BFR92WH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TRANS NPN 15V 5GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11.5dB ~ 17dB
Power - Max: 280mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFR93AWH6327XTSA1 BFR93AWH6327XTSA1 Infineon Technologies Infineon-BFR93AW-DS-v01_01-en.pdf?fileId=db3a30431441fb5d0114acaaec8c148f Description: RF TRANS NPN 12V 6GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
auf Bestellung 21000 Stücke:
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3000+0.17 EUR
6000+0.16 EUR
21000+0.15 EUR
Mindestbestellmenge: 3000
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BFS17SH6327XTSA1 BFS17SH6327XTSA1 Infineon Technologies bfs17s.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142709577b06b6 Description: RF TRANS 2NPN 15V 1.4GHZ SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFS17WH6327XTSA1 BFS17WH6327XTSA1 Infineon Technologies bfs17w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114270c42a906bd Description: RF TRANS NPN 15V 1.4GHZ PGSOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT323
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BFS481H6327XTSA1 BFS481H6327XTSA1 Infineon Technologies bfs481.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114270d383406be Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.46 EUR
6000+0.45 EUR
Mindestbestellmenge: 3000
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BFS483H6327XTSA1 BFS483H6327XTSA1 Infineon Technologies bfs483.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142710876006c5 Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+0.46 EUR
Mindestbestellmenge: 3000
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BFY193PZZZA1 BFY193PZZZA1 Infineon Technologies BFY193.pdf Description: RF TRANS NPN 12V 7.5GHZ MICRO-X1
Packaging: Box
Package / Case: MICRO-X1
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 12.5dB ~ 13.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz
Supplier Device Package: MICRO-X1
Produkt ist nicht verfügbar
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BG3123H6327XTSA1 BG3123H6327XTSA1 Infineon Technologies BG%203123.pdf Description: MOSFET N-CH DUAL 8V 25MA SOT363
Produkt ist nicht verfügbar
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BG3123RH6327XTSA1 BG3123RH6327XTSA1 Infineon Technologies BG%203123.pdf Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA, 20mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.8dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Produkt ist nicht verfügbar
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BG3130H6327XTSA1 BG3130H6327XTSA1 Infineon Technologies BG3130.pdf Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Produkt ist nicht verfügbar
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BG3130RH6327XTSA1 BG3130RH6327XTSA1 Infineon Technologies BG3130.pdf Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Produkt ist nicht verfügbar
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BG3430RH6327XTSA1 BG3430RH6327XTSA1 Infineon Technologies BG%203430R.pdf Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Produkt ist nicht verfügbar
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BG5120KH6327XTSA1 BG5120KH6327XTSA1 Infineon Technologies BG%205120K.pdf Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 20mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.1dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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BG5412KH6327XTSA1 BG5412KH6327XTSA1 Infineon Technologies bg5412k.pdf?folderId=db3a30431400ef68011426e80dd80693&fileId=db3a30431f848401011facb51bc3466d Description: MOSFET N-CH DUAL 8V 25MA SOT363
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BGA420H6327XTSA1 BGA420H6327XTSA1 Infineon Technologies bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637 Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
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3000+0.81 EUR
6000+0.78 EUR
Mindestbestellmenge: 3000
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BGA420H6433XTMA1 BGA420H6433XTMA1 Infineon Technologies bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637 Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGA427H6327XTSA1 BGA427H6327XTSA1 Infineon Technologies bga427.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418dca4d1638 Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 2V ~ 5V
Gain: 18.5dB
Current - Supply: 25mA
Noise Figure: 2.2dB
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Not For New Designs
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3000+0.81 EUR
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Mindestbestellmenge: 3000
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BGA428H6327XTSA1 BGA428H6327XTSA1 Infineon Technologies BGA428_Rev2.3.pdf Description: IC AMP GPS 100MHZ-6GHZ SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 100MHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 2.4V ~ 3V
Gain: 20dB
Current - Supply: 8.2mA
Noise Figure: 1.4dB
P1dB: -19dBm
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT363-PO
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BGA614H6327XTSA1 BGA614H6327XTSA1 Infineon Technologies BGA614.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418ffd35163a Description: IC AMP CDMA 0HZ-2.4GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+1.38 EUR
Mindestbestellmenge: 3000
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BGA616H6327XTSA1 BGA616H6327XTSA1 Infineon Technologies BGA616_Rev2011.pdf Description: IC AMP CDMA 0HZ-2.7GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.06 EUR
6000+1.02 EUR
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BGA622H6820XTSA1 BGA622H6820XTSA1 Infineon Technologies BGA622.pdf Description: IC AMP DCS 500MHZ-6GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: DCS, GSM, ISM
Voltage - Supply: 3.5V
Gain: 13.6dB
Current - Supply: 10mA
Noise Figure: 1.05dB
P1dB: -13dBm
Test Frequency: 2.14GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Not For New Designs
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BGA628L7E6327XTMA1 BGA628L7E6327XTMA1 Infineon Technologies BGA628L7.pdf Description: IC RF AMP GP 400MHZ-6GHZ TSLP7-8
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 400MHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 2.75V
Gain: 21.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: -20.5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSLP-7-8
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BGA711L7E6327XTSA1 BGA711L7E6327XTSA1 Infineon Technologies BGA711L7.pdf Description: IC AMP UMTS 1.9GHZ 2.1GHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 17dB
Current - Supply: 3.6mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 2.1GHz
Supplier Device Package: PG-TSLP-7-1
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BGA735N16E6327XTSA1 BGA735N16E6327XTSA1 Infineon Technologies bga735n16.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043271faefd0127672c9cd51efe Description: IC AMP UMTS 800MHZ 900MHZ TSNP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 16dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSNP-16-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGA748L16E6327XTSA1 BGA748L16E6327XTSA1 Infineon Technologies bga748l16.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd80128b552a914011c Description: IC AMP UMTS 800MHZ 900MHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 16dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -7dBm
Test Frequency: 880MHz
Supplier Device Package: TSLP-16-1
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BGA751L7E6327XTSA1 BGA751L7E6327XTSA1 Infineon Technologies BGA751L7.pdf Description: IC AMP UMTS 800MHZ 900MHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 15.8dB
Current - Supply: 3.3mA
Noise Figure: 1.05dB
P1dB: -5dBm
Test Frequency: 800MHz
Supplier Device Package: PG-TSLP-7-1
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BGA777L7E6327XTSA1 BGA777L7E6327XTSA1 Infineon Technologies BGA777L7.pdf Description: IC AMP UMTS 2.3/2.7GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16.8dB
Current - Supply: 10mA
Noise Figure: 1.2dB
P1dB: -11dBm
Test Frequency: 2.3GHz
Supplier Device Package: PG-TSLP-7-1
Produkt ist nicht verfügbar
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BGB707L7ESDE6327XTSA1 BGB707L7ESDE6327XTSA1 Infineon Technologies Infineon-BGB707L7ESD-DataSheet-v04_01-EN.pdf?fileId=5546d46265f064ff0166389722f14ed4 Description: IC RF AMP 802.11A/B/G/N TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: 802.11a/b/g/n
Voltage - Supply: 1.8V ~ 4V
Gain: 27dB
Current - Supply: 25mA
Noise Figure: 0.7dB
P1dB: 8dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
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BGB717L7ESDE6327XTSA1 BGB717L7ESDE6327XTSA1 Infineon Technologies BGB717L7ESD.pdf Description: IC AMP FM 76MHZ-108MHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 76MHz ~ 108MHz
RF Type: FM
Voltage - Supply: 1.8V ~ 4V
Gain: 12dB
Current - Supply: 3mA
Noise Figure: 1dB
P1dB: -5.5dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
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BGB717L7ESDE6433XTMA1 BGB717L7ESDE6433XTMA1 Infineon Technologies BGB717L7ESD.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304326dfb1300126f4af874b1831 Description: IC AMP MMIC LN TSLP7-1
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BGB741L7ESDE6327XTSA1 BGB741L7ESDE6327XTSA1 Infineon Technologies Infineon-BGB741L7ESD-DS-v03_00-EN.pdf?fileId=5546d46265f064ff016638972c994ed7 Description: IC AMP CELL 50MHZ-3.5GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 50MHz ~ 3.5GHz
RF Type: Cellular, RKE, WiFi
Voltage - Supply: 1.8V ~ 4V
Gain: 19.5dB
Current - Supply: 30mA
Noise Figure: 1dB
P1dB: -6.5dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
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BGF104CE6328XTSA1 BGF104CE6328XTSA1 Infineon Technologies BGF104C.pdf Description: IC HSMMC FILTER/ESD PROT WLP-16
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BGF108CE6328XTSA1 BGF108CE6328XTSA1 Infineon Technologies BGF108C.pdf Description: FILTER RC 70 OHMS/17PF ESD SMD
Packaging: Tape & Reel (TR)
Voltage - Rated: 5V
Package / Case: 18-UFBGA, WLCSP
Size / Dimension: 0.079" L x 0.066" W (2.02mm x 1.68mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 70Ohms, C = 17pF
Height: 0.026" (0.65mm)
Attenuation Value: 45dB @ 800MHz ~ 2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 70
ESD Protection: Yes
Number of Channels: 7
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BGF112E6328XTSA1 BGF112E6328XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: FILTER RC(PI) 15 OHM/0.005UF SMD
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Size / Dimension: 0.046" L x 0.030" W (1.16mm x 0.76mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 15Ohms, C = 5000pF
Height: 0.026" (0.65mm)
Attenuation Value: 30dB @ 30MHz ~ 1.5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 15
ESD Protection: Yes
Number of Channels: 2
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BGF113E6328XTSA1 BGF113E6328XTSA1 Infineon Technologies Description: IC FILTER/ESD PROT WLP-8-6
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BGF119E6329XTSA1 BGF119E6329XTSA1 Infineon Technologies BGF119.pdf Description: TVS DIODE 8VWM 13VC S-WLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: WLP-4-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Produkt ist nicht verfügbar
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BGM781N11E6327XUSA1 BGM781N11E6327XUSA1 Infineon Technologies BGM781N11.pdf Description: MODULE GPS FRONT-END TSNP-11-2
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Frequency: 1575.42MHz
RF Type: GPS
Supplier Device Package: PG-TSNP-11
Produkt ist nicht verfügbar
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BGR405H6327XTSA1 BGR405H6327XTSA1 Infineon Technologies BGR405.pdf Description: RF TRANS NPN 5V PG-SOT-343 3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 50mW
Current - Collector (Ic) (Max): 12mA
Voltage - Collector Emitter Breakdown (Max): 5V
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGR420H6327XTSA1 BGR420H6327XTSA1 Infineon Technologies BGR420.pdf Description: RF TRANS NPN 13V SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 120mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 13V
Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
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BGS 12AL7-6 E6327 BGS 12AL7-6 E6327 Infineon Technologies BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884 Description: IC SWITCH RF SPDT TSLP7-6
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BSB015N04NX3GXUMA1 BSB015N04NX3GXUMA1 Infineon Technologies BSB015N04NX3_G_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a03bbfcd7aac Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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BSB017N03LX3 G BSB017N03LX3 G Infineon Technologies BSB017N03LX3_G.pdf Description: MOSFET N-CH 30V 32A/147A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 15 V
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BSB024N03LX G BSB024N03LX G Infineon Technologies BSB024N03LX%20G.pdf Description: MOSFET N-CH 30V 27A/145A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 15 V
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BSC042NE7NS3GATMA1 BSC042NE7NS3GATMA1 Infineon Technologies BSC042NE7NS3G_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a5f8baf30c25 Description: MOSFET N-CH 75V 19A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V
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BSC060P03NS3EGATMA1 BSC060P03NS3EGATMA1 Infineon Technologies BSC060P03NS3E+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120adcbe71367cb Description: MOSFET P-CH 30V 17.7/100A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 15 V
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BSC077N12NS3 G BSC077N12NS3 G Infineon Technologies BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39 Description: MOSFET N-CH 120V 98A 8TDSON
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BSC084P03NS3GATMA1 BSC084P03NS3GATMA1 Infineon Technologies BSC084P03NS3+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120c83fdcd7326c Description: MOSFET P-CH 30V 14.9A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
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BSC160N10NS3GATMA1 BSC160N10NS3GATMA1 Infineon Technologies BSC160N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd01226040189a7f47 Description: MOSFET N-CH 100V 8.8A/42A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 33A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
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BSC190N12NS3GATMA1 BSC190N12NS3GATMA1 Infineon Technologies BSC190N12NS3+Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7bb1e767d49 Description: MOSFET N-CH 120V 8.6A/44A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V
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BSC320N20NS3GATMA1 BSC320N20NS3GATMA1 Infineon Technologies BSC320N20NS3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012495e37b301571 Description: MOSFET N-CH 200V 36A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.59 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSC440N10NS3GATMA1 BSC440N10NS3GATMA1 Infineon Technologies BSC440N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122604520d47f56 Description: MOSFET N-CH 100V 5.3A/18A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V
Produkt ist nicht verfügbar
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BFP650H6327XTSA1 Infineon-BFP650-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03d00e3930
BFP650H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4.5V 37GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 21.5dB
Power - Max: 500mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 80mA, 3V
Frequency - Transition: 37GHz
Noise Figure (dB Typ @ f): 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
6000+0.26 EUR
21000+0.25 EUR
Mindestbestellmenge: 3000
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BFR181WH6327XTSA1 bfr181w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114268dc6c1063f
BFR181WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.08 EUR
9000+0.07 EUR
15000+0.07 EUR
21000+0.07 EUR
30000+0.07 EUR
Mindestbestellmenge: 3000
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BFR182WH6327XTSA1 bfr182w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114269d1e43064c
BFR182WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.08 EUR
9000+0.07 EUR
Mindestbestellmenge: 3000
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BFR183WH6327XTSA1 BFR183W.pdf
BFR183WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Produkt ist nicht verfügbar
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BFR193FH6327XTSA1 bfr193f.pdf?folderId=db3a30431400ef68011425b2dfaf05c6&fileId=db3a30431441fb5d0114acfcde76152c
BFR193FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
15000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BFR193WH6327XTSA1 bfr193w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426b3b6650674
BFR193WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
21000+0.11 EUR
Mindestbestellmenge: 3000
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BFR340FH6327XTSA1 Infineon-BFR340F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f03e34d3934
BFR340FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 28dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
Produkt ist nicht verfügbar
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BFR360FH6327XTSA1 Infineon-BFP540ESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f0382ea3920
BFR360FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
15000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BFR720L3RHE6327XTSA1 Infineon+SiGe+LNA+BFR720L3RH+Rev_2.pdf?folderId=db3a30431400ef68011425b291f205c5&fileId=db3a30431ddc9372011e2677fc1e4740
BFR720L3RHE6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS RF NPN 4V 20MA TSLP-3
Produkt ist nicht verfügbar
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BFR92WH6327XTSA1 fundamentals-of-power-semiconductors
BFR92WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 15V 5GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11.5dB ~ 17dB
Power - Max: 280mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFR93AWH6327XTSA1 Infineon-BFR93AW-DS-v01_01-en.pdf?fileId=db3a30431441fb5d0114acaaec8c148f
BFR93AWH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 6GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
6000+0.16 EUR
21000+0.15 EUR
Mindestbestellmenge: 3000
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BFS17SH6327XTSA1 bfs17s.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142709577b06b6
BFS17SH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS 2NPN 15V 1.4GHZ SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFS17WH6327XTSA1 bfs17w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114270c42a906bd
BFS17WH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 15V 1.4GHZ PGSOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT323
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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BFS481H6327XTSA1 bfs481.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114270d383406be
BFS481H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.46 EUR
6000+0.45 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BFS483H6327XTSA1 bfs483.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142710876006c5
BFS483H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.46 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BFY193PZZZA1 BFY193.pdf
BFY193PZZZA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ MICRO-X1
Packaging: Box
Package / Case: MICRO-X1
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 12.5dB ~ 13.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz
Supplier Device Package: MICRO-X1
Produkt ist nicht verfügbar
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BG3123H6327XTSA1 BG%203123.pdf
BG3123H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH DUAL 8V 25MA SOT363
Produkt ist nicht verfügbar
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BG3123RH6327XTSA1 BG%203123.pdf
BG3123RH6327XTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA, 20mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.8dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Produkt ist nicht verfügbar
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BG3130H6327XTSA1 BG3130.pdf
BG3130H6327XTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Produkt ist nicht verfügbar
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BG3130RH6327XTSA1 BG3130.pdf
BG3130RH6327XTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Produkt ist nicht verfügbar
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BG3430RH6327XTSA1 BG%203430R.pdf
BG3430RH6327XTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Produkt ist nicht verfügbar
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BG5120KH6327XTSA1 BG%205120K.pdf
BG5120KH6327XTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 20mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.1dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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BG5412KH6327XTSA1 bg5412k.pdf?folderId=db3a30431400ef68011426e80dd80693&fileId=db3a30431f848401011facb51bc3466d
BG5412KH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH DUAL 8V 25MA SOT363
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGA420H6327XTSA1 bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637
BGA420H6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.81 EUR
6000+0.78 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BGA420H6433XTMA1 bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637
BGA420H6433XTMA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGA427H6327XTSA1 bga427.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418dca4d1638
BGA427H6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 2V ~ 5V
Gain: 18.5dB
Current - Supply: 25mA
Noise Figure: 2.2dB
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Not For New Designs
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.81 EUR
6000+0.78 EUR
Mindestbestellmenge: 3000
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BGA428H6327XTSA1 BGA428_Rev2.3.pdf
BGA428H6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 100MHZ-6GHZ SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 100MHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 2.4V ~ 3V
Gain: 20dB
Current - Supply: 8.2mA
Noise Figure: 1.4dB
P1dB: -19dBm
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT363-PO
Produkt ist nicht verfügbar
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BGA614H6327XTSA1 BGA614.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418ffd35163a
BGA614H6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP CDMA 0HZ-2.4GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.38 EUR
Mindestbestellmenge: 3000
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BGA616H6327XTSA1 BGA616_Rev2011.pdf
BGA616H6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP CDMA 0HZ-2.7GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.06 EUR
6000+1.02 EUR
9000+1.00 EUR
Mindestbestellmenge: 3000
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BGA622H6820XTSA1 BGA622.pdf
BGA622H6820XTSA1
Hersteller: Infineon Technologies
Description: IC AMP DCS 500MHZ-6GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: DCS, GSM, ISM
Voltage - Supply: 3.5V
Gain: 13.6dB
Current - Supply: 10mA
Noise Figure: 1.05dB
P1dB: -13dBm
Test Frequency: 2.14GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Not For New Designs
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.09 EUR
6000+1.05 EUR
9000+1.02 EUR
15000+1.00 EUR
Mindestbestellmenge: 3000
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BGA628L7E6327XTMA1 BGA628L7.pdf
BGA628L7E6327XTMA1
Hersteller: Infineon Technologies
Description: IC RF AMP GP 400MHZ-6GHZ TSLP7-8
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 400MHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 2.75V
Gain: 21.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: -20.5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSLP-7-8
Produkt ist nicht verfügbar
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BGA711L7E6327XTSA1 BGA711L7.pdf
BGA711L7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP UMTS 1.9GHZ 2.1GHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 17dB
Current - Supply: 3.6mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 2.1GHz
Supplier Device Package: PG-TSLP-7-1
Produkt ist nicht verfügbar
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BGA735N16E6327XTSA1 bga735n16.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043271faefd0127672c9cd51efe
BGA735N16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP UMTS 800MHZ 900MHZ TSNP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 16dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSNP-16-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGA748L16E6327XTSA1 bga748l16.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a3043284aacd80128b552a914011c
BGA748L16E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP UMTS 800MHZ 900MHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 16dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -7dBm
Test Frequency: 880MHz
Supplier Device Package: TSLP-16-1
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+1.66 EUR
Mindestbestellmenge: 7500
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BGA751L7E6327XTSA1 BGA751L7.pdf
BGA751L7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP UMTS 800MHZ 900MHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 15.8dB
Current - Supply: 3.3mA
Noise Figure: 1.05dB
P1dB: -5dBm
Test Frequency: 800MHz
Supplier Device Package: PG-TSLP-7-1
Produkt ist nicht verfügbar
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BGA777L7E6327XTSA1 BGA777L7.pdf
BGA777L7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP UMTS 2.3/2.7GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16.8dB
Current - Supply: 10mA
Noise Figure: 1.2dB
P1dB: -11dBm
Test Frequency: 2.3GHz
Supplier Device Package: PG-TSLP-7-1
Produkt ist nicht verfügbar
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BGB707L7ESDE6327XTSA1 Infineon-BGB707L7ESD-DataSheet-v04_01-EN.pdf?fileId=5546d46265f064ff0166389722f14ed4
BGB707L7ESDE6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP 802.11A/B/G/N TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: 802.11a/b/g/n
Voltage - Supply: 1.8V ~ 4V
Gain: 27dB
Current - Supply: 25mA
Noise Figure: 0.7dB
P1dB: 8dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
Produkt ist nicht verfügbar
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BGB717L7ESDE6327XTSA1 BGB717L7ESD.pdf
BGB717L7ESDE6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP FM 76MHZ-108MHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 76MHz ~ 108MHz
RF Type: FM
Voltage - Supply: 1.8V ~ 4V
Gain: 12dB
Current - Supply: 3mA
Noise Figure: 1dB
P1dB: -5.5dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGB717L7ESDE6433XTMA1 BGB717L7ESD.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304326dfb1300126f4af874b1831
BGB717L7ESDE6433XTMA1
Hersteller: Infineon Technologies
Description: IC AMP MMIC LN TSLP7-1
Produkt ist nicht verfügbar
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BGB741L7ESDE6327XTSA1 Infineon-BGB741L7ESD-DS-v03_00-EN.pdf?fileId=5546d46265f064ff016638972c994ed7
BGB741L7ESDE6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP CELL 50MHZ-3.5GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 50MHz ~ 3.5GHz
RF Type: Cellular, RKE, WiFi
Voltage - Supply: 1.8V ~ 4V
Gain: 19.5dB
Current - Supply: 30mA
Noise Figure: 1dB
P1dB: -6.5dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
auf Bestellung 10541 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+0.89 EUR
Mindestbestellmenge: 7500
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BGF104CE6328XTSA1 BGF104C.pdf
BGF104CE6328XTSA1
Hersteller: Infineon Technologies
Description: IC HSMMC FILTER/ESD PROT WLP-16
Produkt ist nicht verfügbar
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BGF108CE6328XTSA1 BGF108C.pdf
BGF108CE6328XTSA1
Hersteller: Infineon Technologies
Description: FILTER RC 70 OHMS/17PF ESD SMD
Packaging: Tape & Reel (TR)
Voltage - Rated: 5V
Package / Case: 18-UFBGA, WLCSP
Size / Dimension: 0.079" L x 0.066" W (2.02mm x 1.68mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 70Ohms, C = 17pF
Height: 0.026" (0.65mm)
Attenuation Value: 45dB @ 800MHz ~ 2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 70
ESD Protection: Yes
Number of Channels: 7
Produkt ist nicht verfügbar
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BGF112E6328XTSA1 fundamentals-of-power-semiconductors
BGF112E6328XTSA1
Hersteller: Infineon Technologies
Description: FILTER RC(PI) 15 OHM/0.005UF SMD
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Size / Dimension: 0.046" L x 0.030" W (1.16mm x 0.76mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 15Ohms, C = 5000pF
Height: 0.026" (0.65mm)
Attenuation Value: 30dB @ 30MHz ~ 1.5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 15
ESD Protection: Yes
Number of Channels: 2
Produkt ist nicht verfügbar
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BGF113E6328XTSA1
BGF113E6328XTSA1
Hersteller: Infineon Technologies
Description: IC FILTER/ESD PROT WLP-8-6
Produkt ist nicht verfügbar
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BGF119E6329XTSA1 BGF119.pdf
BGF119E6329XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 8VWM 13VC S-WLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: WLP-4-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Produkt ist nicht verfügbar
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BGM781N11E6327XUSA1 BGM781N11.pdf
BGM781N11E6327XUSA1
Hersteller: Infineon Technologies
Description: MODULE GPS FRONT-END TSNP-11-2
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Frequency: 1575.42MHz
RF Type: GPS
Supplier Device Package: PG-TSNP-11
Produkt ist nicht verfügbar
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BGR405H6327XTSA1 BGR405.pdf
BGR405H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V PG-SOT-343 3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 50mW
Current - Collector (Ic) (Max): 12mA
Voltage - Collector Emitter Breakdown (Max): 5V
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGR420H6327XTSA1 BGR420.pdf
BGR420H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 13V SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 120mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 13V
Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Produkt ist nicht verfügbar
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BGS 12AL7-6 E6327 BGS12AL7-6.pdf?folderId=db3a304314dca3890115176d140c0ca3&fileId=db3a30431d8a6b3c011dbf68acde2884
BGS 12AL7-6 E6327
Hersteller: Infineon Technologies
Description: IC SWITCH RF SPDT TSLP7-6
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
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BSB015N04NX3GXUMA1 BSB015N04NX3_G_rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a03bbfcd7aac
BSB015N04NX3GXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Produkt ist nicht verfügbar
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BSB017N03LX3 G BSB017N03LX3_G.pdf
BSB017N03LX3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 32A/147A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 15 V
Produkt ist nicht verfügbar
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BSB024N03LX G BSB024N03LX%20G.pdf
BSB024N03LX G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 27A/145A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 15 V
Produkt ist nicht verfügbar
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BSC042NE7NS3GATMA1 BSC042NE7NS3G_Rev2.21.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320d39d590121a5f8baf30c25
BSC042NE7NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 19A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.77 EUR
Mindestbestellmenge: 5000
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BSC060P03NS3EGATMA1 BSC060P03NS3E+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120adcbe71367cb
BSC060P03NS3EGATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 17.7/100A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 15 V
Produkt ist nicht verfügbar
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BSC077N12NS3 G BSC077N12NS3++Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7b3afe37d39
BSC077N12NS3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 98A 8TDSON
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
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BSC084P03NS3GATMA1 BSC084P03NS3+G_2.1.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304320896aa20120c83fdcd7326c
BSC084P03NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 14.9A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
auf Bestellung 2125 Stücke:
Lieferzeit 10-14 Tag (e)
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BSC160N10NS3GATMA1 BSC160N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd01226040189a7f47
BSC160N10NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 8.8A/42A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 33A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.68 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSC190N12NS3GATMA1 BSC190N12NS3+Rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122a7bb1e767d49
BSC190N12NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 120V 8.6A/44A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.80 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSC320N20NS3GATMA1 BSC320N20NS3+G+Rev2.2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043243b5f17012495e37b301571
BSC320N20NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 36A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.59 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSC440N10NS3GATMA1 BSC440N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122604520d47f56
BSC440N10NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 5.3A/18A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V
Produkt ist nicht verfügbar
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