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BC857BL3E6327XTMA1 INFINEON TECHNOLOGIES Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9 Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Produkt ist nicht verfügbar
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ESD131B1W0201E6327XTSA1 INFINEON TECHNOLOGIES Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
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BSL308PEH6327XTSA1 BSL308PEH6327XTSA1 INFINEON TECHNOLOGIES BSL308PEH6327XTSA1-DTE.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Power dissipation: 0.5W
Polarisation: unipolar
Version: ESD
Technology: OptiMOS™ P3
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Case: PG-TSOP-6
On-state resistance: 80mΩ
Mounting: SMD
auf Bestellung 1324 Stücke:
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73+1.18 EUR
118+0.73 EUR
184+0.46 EUR
500+0.36 EUR
1000+0.35 EUR
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S29JL064J70TFI000 S29JL064J70TFI000 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S29JL064J70TFI003 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29JL064J60TFA003 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
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S29JL064J55BHI000 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 338 Stücke
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S29JL064J55BHI003 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29JL064J55TFA000 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 192 Stücke
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S29JL064J55TFA003 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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S29JL064J55TFI003 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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S29JL064J60BHA000 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3380 Stücke
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S29JL064J60TFA000 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 960 Stücke
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S29JL064J60TFI000 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 96 Stücke
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S29JL064J70BHI000 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 338 Stücke
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S29JL064J70BHI003 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S29JL064J70TFA000 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 960 Stücke
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S29JL064J70TFA003 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BSP88H6327XTSA1 BSP88H6327XTSA1 INFINEON TECHNOLOGIES BSP88H6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 762 Stücke:
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88+0.98 EUR
112+0.76 EUR
129+0.67 EUR
215+0.39 EUR
500+0.38 EUR
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BAS21UE6433HTMA1 INFINEON TECHNOLOGIES Infineon-BAS21SERIES-DS-v01_01-en.pdf?fileId=5546d4624933b8750149880ded0b7e1a Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Produkt ist nicht verfügbar
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IRFH5301TRPBF IRFH5301TRPBF INFINEON TECHNOLOGIES irfh5301pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFH5302TRPBF IRFH5302TRPBF INFINEON TECHNOLOGIES irfh5302pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFH5304TRPBF IRFH5304TRPBF INFINEON TECHNOLOGIES irfh5304pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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IRFS7530TRLPBF IRFS7530TRLPBF INFINEON TECHNOLOGIES irfs7530pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 2mΩ
Trade name: StrongIRFET
Gate charge: 274nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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IPB038N12N3GATMA1 IPB038N12N3GATMA1 INFINEON TECHNOLOGIES IPB038N12N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 61 Stücke:
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18+4.74 EUR
25+4.24 EUR
50+3.93 EUR
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IPB029N06N3GATMA1 IPB029N06N3GATMA1 INFINEON TECHNOLOGIES IPB029N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Kind of channel: enhancement
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23+3.75 EUR
35+2.46 EUR
50+1.94 EUR
100+1.75 EUR
200+1.58 EUR
500+1.42 EUR
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IPB037N06N3GATMA1 IPB037N06N3GATMA1 INFINEON TECHNOLOGIES IPB037N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 992 Stücke:
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42+2.05 EUR
48+1.81 EUR
53+1.62 EUR
100+1.54 EUR
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IPB030N08N3GATMA1 IPB030N08N3GATMA1 INFINEON TECHNOLOGIES IPB030N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB048N15N5LF IPB048N15N5LF INFINEON TECHNOLOGIES IPB048N15N5LF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Mounting: SMD
Power dissipation: 313W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 115A
Kind of channel: enhancement
Drain-source voltage: 150V
Gate-source voltage: ±20V
Case: PG-TO263-3
Produkt ist nicht verfügbar
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IPB019N08N3GIPB019N08N3G
IPB019N08N3GIPB019N08N3G
 IPB019N08N3G INFINEON TECHNOLOGIES IPB019N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-7
On-state resistance: 1.9mΩ
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 180A
Kind of channel: enhancement
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IPB057N06NATMA1 IPB057N06NATMA1 INFINEON TECHNOLOGIES IPB057N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB081N06L3G IPB081N06L3G INFINEON TECHNOLOGIES IPB081N06L3G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 79W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 79W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB072N15N3GATMA1 IPB072N15N3GATMA1 INFINEON TECHNOLOGIES IPB072N15N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB010N06NATMA1 IPB010N06NATMA1 INFINEON TECHNOLOGIES IPB010N06N-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB040N08NF2SATMA1 IPB040N08NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB040N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc00361b15 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 107A; 150W; D2PAK,TO263
Type of transistor: N-MOSFET
On-state resistance: 4mΩ
Mounting: SMD
Power dissipation: 150W
Gate charge: 54nC
Polarisation: unipolar
Drain current: 107A
Kind of channel: enhancement
Drain-source voltage: 80V
Case: D2PAK; TO263
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IPB050N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc12431b1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB015N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB015N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67bcc63b27 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB018N06NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB018N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67c38b3b2a Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IPB042N10N3GE8187ATMA1 INFINEON TECHNOLOGIES fundamentals-of-power-semiconductors Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB044N15N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB044N15N5-DS-v02_00-EN.pdf?fileId=5546d462576f347501576ffd3e582757 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 123A; Idm: 696A; 300W
Type of transistor: N-MOSFET
On-state resistance: 4.4mΩ
Mounting: SMD
Pulsed drain current: 696A
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 123A
Kind of channel: enhancement
Drain-source voltage: 150V
Gate-source voltage: ±20V
Case: PG-TO263-7
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IPB044N15N5E8187ATMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB048N15N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB048N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a01efd885463 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 118A; Idm: 480A; 300W
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Mounting: SMD
Pulsed drain current: 480A
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 118A
Kind of channel: enhancement
Drain-source voltage: 150V
Gate-source voltage: ±20V
Case: PG-TO 263-3
Produkt ist nicht verfügbar
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IPB048N15N5LFATMA1 INFINEON TECHNOLOGIES Infineon-IPB048N15N5LF-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b573da84a026c Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB055N08NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc1a741b1e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 94A; 107W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 94A
Power dissipation: 107W
Case: D2PAK-3
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
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IPB054N08N3GATMA1 IPB054N08N3GATMA1 INFINEON TECHNOLOGIES IPB054N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB060N15N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB060N15N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5ca333d3364d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 136A; 250W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 136A
Power dissipation: 250W
Case: TO263-7
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
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IPB060N15N5E8187ATMA1 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IPB067N08N3GATMA1 IPB067N08N3GATMA1 INFINEON TECHNOLOGIES IPB067N08N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB108N15N3GATMA1 IPB108N15N3GATMA1 INFINEON TECHNOLOGIES IPB108N15N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Case: PG-TO263-3
On-state resistance: 10.8mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 214W
Technology: OptiMOS™ 3
Drain current: 83A
Gate-source voltage: ±20V
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IPB100N06S205ATMA4 IPB100N06S205ATMA4 INFINEON TECHNOLOGIES IPB100N06S205.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Case: PG-TO263-3
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Power dissipation: 300W
Technology: OptiMOS™
Drain current: 100A
Gate-source voltage: ±20V
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IPB110P06LMATMA1 INFINEON TECHNOLOGIES Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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IPB100N12S305ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I100N12S3-05-Data-Sheet-02-Infineon-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf0aced7fe9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 INFINEON TECHNOLOGIES IPB100N06S2L05.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Case: PG-TO263-3
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Power dissipation: 300W
Technology: OptiMOS™
Drain current: 100A
Gate-source voltage: ±20V
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IPB120N04S401ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I120N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c2ebd3b5d27&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IPB120N04S402ATMA1 IPB120N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 158W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK; TO263
On-state resistance: 1.58mΩ
Mounting: SMD
Gate charge: 134nC
Kind of channel: enhancement
Power dissipation: 158W
Drain current: 120A
Application: automotive industry
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IPB120N04S4L02ATMA1 INFINEON TECHNOLOGIES Infineon-IPB120N04S4L0210-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f27bb46492 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB120N10S403ATMA1 INFINEON TECHNOLOGIES IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB120N10S405ATMA1 INFINEON TECHNOLOGIES IPP_B_I120N10S4-05-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480cf161070b67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB133N12NM6ATMA1 INFINEON TECHNOLOGIES Infineon-IPB133N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018e55e1815825f3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IPB156N22NFDATMA1 IPB156N22NFDATMA1 INFINEON TECHNOLOGIES Infineon-IPB156N22NFD-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015dacb0bcce22e7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 220V; 72A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 220V
Case: D2PAK; TO263
On-state resistance: 12.9mΩ
Mounting: SMD
Gate charge: 87nC
Kind of channel: enhancement
Power dissipation: 300W
Drain current: 72A
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BC857BL3E6327XTMA1 Infineon-BC856SERIES_BC857SERIES_BC858SERIES_BC859SERIES_BC860SERIES-DS-v01_01-en.pdf?fileId=db3a304316f66ee8011787d183d011e9
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Produkt ist nicht verfügbar
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ESD131B1W0201E6327XTSA1 Infineon-ESD131-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015ce94850964889
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Produkt ist nicht verfügbar
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BSL308PEH6327XTSA1 BSL308PEH6327XTSA1-DTE.pdf
BSL308PEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -2A; 0.5W; PG-TSOP-6; ESD
Power dissipation: 0.5W
Polarisation: unipolar
Version: ESD
Technology: OptiMOS™ P3
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Case: PG-TSOP-6
On-state resistance: 80mΩ
Mounting: SMD
auf Bestellung 1324 Stücke:
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73+1.18 EUR
118+0.73 EUR
184+0.46 EUR
500+0.36 EUR
1000+0.35 EUR
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S29JL064J70TFI000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S29JL064J70TFI000
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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S29JL064J70TFI003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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S29JL064J60TFA003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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S29JL064J55BHI000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
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S29JL064J55BHI003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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S29JL064J55TFA000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 192 Stücke
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S29JL064J55TFA003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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S29JL064J55TFI003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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S29JL064J60BHA000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3380 Stücke
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S29JL064J60TFA000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 960 Stücke
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S29JL064J60TFI000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 96 Stücke
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S29JL064J70BHI000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
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S29JL064J70BHI003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S29JL064J70TFA000 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 960 Stücke
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S29JL064J70TFA003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BSP88H6327XTSA1 BSP88H6327XTSA1.pdf
BSP88H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 762 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
88+0.98 EUR
112+0.76 EUR
129+0.67 EUR
215+0.39 EUR
500+0.38 EUR
Mindestbestellmenge: 88 Stücke
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BAS21UE6433HTMA1 Infineon-BAS21SERIES-DS-v01_01-en.pdf?fileId=5546d4624933b8750149880ded0b7e1a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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IRFH5301TRPBF irfh5301pbf.pdf
IRFH5301TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRFH5302TRPBF irfh5302pbf.pdf
IRFH5302TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRFH5304TRPBF irfh5304pbf.pdf
IRFH5304TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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IRFS7530TRLPBF irfs7530pbf.pdf
IRFS7530TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; D2PAK; StrongIRFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 2mΩ
Trade name: StrongIRFET
Gate charge: 274nC
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IPB038N12N3GATMA1 IPB038N12N3G-DTE.pdf
IPB038N12N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 120A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.74 EUR
25+4.24 EUR
50+3.93 EUR
Mindestbestellmenge: 18 Stücke
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IPB029N06N3GATMA1 IPB029N06N3G-DTE.pdf
IPB029N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.75 EUR
35+2.46 EUR
50+1.94 EUR
100+1.75 EUR
200+1.58 EUR
500+1.42 EUR
Mindestbestellmenge: 23 Stücke
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IPB037N06N3GATMA1 IPB037N06N3G-DTE.pdf
IPB037N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Power dissipation: 188W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 992 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
42+2.05 EUR
48+1.81 EUR
53+1.62 EUR
100+1.54 EUR
Mindestbestellmenge: 42 Stücke
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IPB030N08N3GATMA1 IPB030N08N3G-DTE.pdf
IPB030N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 160A
Power dissipation: 214W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB048N15N5LF IPB048N15N5LF.pdf
IPB048N15N5LF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 115A; 313W; PG-TO263-3
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Mounting: SMD
Power dissipation: 313W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 115A
Kind of channel: enhancement
Drain-source voltage: 150V
Gate-source voltage: ±20V
Case: PG-TO263-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB019N08N3G IPB019N08N3G-DTE.pdf
IPB019N08N3GIPB019N08N3G
IPB019N08N3GIPB019N08N3G
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 180A; 300W; PG-TO263-7
Mounting: SMD
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-TO263-7
On-state resistance: 1.9mΩ
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 180A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB057N06NATMA1 IPB057N06N-DTE.pdf
IPB057N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 83W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB081N06L3G IPB081N06L3G.pdf
IPB081N06L3G
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 79W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 79W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB072N15N3GATMA1 IPB072N15N3G-DTE.pdf
IPB072N15N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB010N06NATMA1 IPB010N06N-DTE.pdf
IPB010N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB040N08NF2SATMA1 Infineon-IPB040N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc00361b15
IPB040N08NF2SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 107A; 150W; D2PAK,TO263
Type of transistor: N-MOSFET
On-state resistance: 4mΩ
Mounting: SMD
Power dissipation: 150W
Gate charge: 54nC
Polarisation: unipolar
Drain current: 107A
Kind of channel: enhancement
Drain-source voltage: 80V
Case: D2PAK; TO263
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IPB050N10NF2SATMA1 Infineon-IPB050N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc12431b1b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IPB015N06NF2SATMA1 Infineon-IPB015N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67bcc63b27
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IPB018N06NF2SATMA1 Infineon-IPB018N06NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851c67c38b3b2a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IPB042N10N3GE8187ATMA1 fundamentals-of-power-semiconductors
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB044N15N5ATMA1 Infineon-IPB044N15N5-DS-v02_00-EN.pdf?fileId=5546d462576f347501576ffd3e582757
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 123A; Idm: 696A; 300W
Type of transistor: N-MOSFET
On-state resistance: 4.4mΩ
Mounting: SMD
Pulsed drain current: 696A
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 123A
Kind of channel: enhancement
Drain-source voltage: 150V
Gate-source voltage: ±20V
Case: PG-TO263-7
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB044N15N5E8187ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB048N15N5ATMA1 Infineon-IPB048N15N5-DS-v02_00-EN.pdf?fileId=5546d46253f650570154a01efd885463
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 118A; Idm: 480A; 300W
Type of transistor: N-MOSFET
On-state resistance: 4.8mΩ
Mounting: SMD
Pulsed drain current: 480A
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 118A
Kind of channel: enhancement
Drain-source voltage: 150V
Gate-source voltage: ±20V
Case: PG-TO 263-3
Produkt ist nicht verfügbar
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IPB048N15N5LFATMA1 Infineon-IPB048N15N5LF-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b573da84a026c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB055N08NF2SATMA1 Infineon-IPB055N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc1a741b1e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 94A; 107W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 94A
Power dissipation: 107W
Case: D2PAK-3
On-state resistance: 5.5mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IPB054N08N3GATMA1 IPB054N08N3G-DTE.pdf
IPB054N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 150W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB060N15N5ATMA1 Infineon-IPB060N15N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5ca333d3364d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 136A; 250W; TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 136A
Power dissipation: 250W
Case: TO263-7
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB060N15N5E8187ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 50000 Stücke
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IPB067N08N3GATMA1 IPB067N08N3G-DTE.pdf
IPB067N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB108N15N3GATMA1 IPB108N15N3G-DTE.pdf
IPB108N15N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Case: PG-TO263-3
On-state resistance: 10.8mΩ
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 214W
Technology: OptiMOS™ 3
Drain current: 83A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB100N06S205ATMA4 IPB100N06S205.pdf
IPB100N06S205ATMA4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Case: PG-TO263-3
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Power dissipation: 300W
Technology: OptiMOS™
Drain current: 100A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB110P06LMATMA1 Infineon-IPB110P06LM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2d06000ae
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB100N12S305ATMA1 Infineon-IPP_B_I100N12S3-05-Data-Sheet-02-Infineon-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf0aced7fe9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB100N06S2L05ATMA2 IPB100N06S2L05.pdf
IPB100N06S2L05ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Case: PG-TO263-3
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Power dissipation: 300W
Technology: OptiMOS™
Drain current: 100A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPB120N04S401ATMA1 Infineon-IPP_B_I120N04S4_01-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c2ebd3b5d27&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB120N04S402ATMA1 Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t
IPB120N04S402ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 158W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK; TO263
On-state resistance: 1.58mΩ
Mounting: SMD
Gate charge: 134nC
Kind of channel: enhancement
Power dissipation: 158W
Drain current: 120A
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB120N04S4L02ATMA1 Infineon-IPB120N04S4L0210-DS-v01_00-en.pdf?fileId=5546d461464245d3014670f27bb46492
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB120N10S403ATMA1 IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB120N10S405ATMA1 IPP_B_I120N10S4-05-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480cf161070b67
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
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IPB133N12NM6ATMA1 Infineon-IPB133N12NM6-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8d2fe47b018e55e1815825f3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB156N22NFDATMA1 Infineon-IPB156N22NFD-DS-v02_00-EN.pdf?fileId=5546d4625d5945ed015dacb0bcce22e7
IPB156N22NFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 220V; 72A; 300W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 220V
Case: D2PAK; TO263
On-state resistance: 12.9mΩ
Mounting: SMD
Gate charge: 87nC
Kind of channel: enhancement
Power dissipation: 300W
Drain current: 72A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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