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MB88572P-GT-319M-SH Infineon Technologies Description: IC MCU 8BIT MICOM
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89193APF-G-346-BND-R MB89193APF-G-346-BND-R Infineon Technologies Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Bulk
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89374-PFQ-G-BND Infineon Technologies Description: IC MCU 8BIT FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89615RPFM-G-1025-BNDE1 MB89615RPFM-G-1025-BNDE1 Infineon Technologies Description: IC MCU 8BIT 16KB MROM 64QFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (12x12)
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89713APF-G-526-BND-TN MB89713APF-G-526-BND-TN Infineon Technologies Description: IC MCU 8BIT 8KB MROM 80PQFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 260 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB90561APMC-G-269-BNDE1 MB90561APMC-G-269-BNDE1 Infineon Technologies Description: IC MCU 16BIT 32KB MROM 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB90673PF-G-269-BND-B MB90673PF-G-269-BND-B Infineon Technologies Description: IC MCU 16BIT 48KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89215-G-104-CHIP Infineon Technologies Description: IC MCU 8BIT 16KB MROM 320BGA
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89485-G-212-CHIP-CN Infineon Technologies Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89193PF-G-317-BND-RE1 MB89193PF-G-317-BND-RE1 Infineon Technologies Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB90467PFM-G-258E1 MB90467PFM-G-258E1 Infineon Technologies Description: IC MCU 16BIT 64KB MROM 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89P568-101PFV-GE1 MB89P568-101PFV-GE1 Infineon Technologies Description: IC MCU 8BIT 48KB OTP 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IHW25N120E1XKSA1 IHW25N120E1XKSA1 Infineon Technologies Infineon-IHW25N120E1-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156a2acb89b20c1 Description: IGBT NPT/TRENCH 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO247-3
IGBT Type: NPT and Trench
Switching Energy: 800µJ (off)
Gate Charge: 147 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 231 W
auf Bestellung 1 Stücke:
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ICE1CS02GXUMA1 ICE1CS02GXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC PFC CTR AV CURR 65KHZ DSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Average Current
Supplier Device Package: PG-DSO-16-22
Part Status: Obsolete
Current - Startup: 1.3 mA
Produkt ist nicht verfügbar
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IPA80R1K4P7XKSA1 IPA80R1K4P7XKSA1 Infineon Technologies Infineon-IPA80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d90b3461516c Description: MOSFET N-CH 800V 4A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 712 Stücke:
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9+2.15 EUR
50+1.29 EUR
100+1.13 EUR
500+0.92 EUR
Mindestbestellmenge: 9
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IPS80R1K4P7AKMA1 IPS80R1K4P7AKMA1 Infineon Technologies Infineon-IPS80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e490456a1aa5 Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Produkt ist nicht verfügbar
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IPU80R1K4P7AKMA1 IPU80R1K4P7AKMA1 Infineon Technologies INFN-S-A0002786355-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 6 Stücke:
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IPU80R4K5P7AKMA1 IPU80R4K5P7AKMA1 Infineon Technologies Infineon-IPU80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e8ec5bf3073e Description: MOSFET N-CH 800V 1.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 1462 Stücke:
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10+1.9 EUR
75+0.82 EUR
150+0.73 EUR
525+0.6 EUR
1050+0.55 EUR
Mindestbestellmenge: 10
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IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 Infineon Technologies Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5 Description: MOSFET N-CH 800V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 7500 Stücke:
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2500+0.56 EUR
5000+0.52 EUR
7500+0.5 EUR
Mindestbestellmenge: 2500
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IPD80R450P7ATMA1 IPD80R450P7ATMA1 Infineon Technologies Infineon-IPD80R450P7-DS-v02_00-EN.pdf?fileId=5546d4625607bd1301562e3b26963327 Description: MOSFET N-CH 800V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
auf Bestellung 2500 Stücke:
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2500+1.09 EUR
Mindestbestellmenge: 2500
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IPD80R1K4P7ATMA1 IPD80R1K4P7ATMA1 Infineon Technologies Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5 Description: MOSFET N-CH 800V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 9151 Stücke:
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25+0.72 EUR
27+0.66 EUR
500+0.65 EUR
Mindestbestellmenge: 25
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IPD80R450P7ATMA1 IPD80R450P7ATMA1 Infineon Technologies Infineon-IPD80R450P7-DS-v02_00-EN.pdf?fileId=5546d4625607bd1301562e3b26963327 Description: MOSFET N-CH 800V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
auf Bestellung 5489 Stücke:
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5+3.82 EUR
10+2.46 EUR
100+1.68 EUR
500+1.35 EUR
1000+1.34 EUR
Mindestbestellmenge: 5
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PTFA080551EV4T500XWSA1 Infineon Technologies Description: IC FET RF LDMOS 55W H-36265-2
Produkt ist nicht verfügbar
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PTFA211801EV5T350XWSA1 Infineon Technologies Description: IC RF FET LDMOS H-36260-2
Produkt ist nicht verfügbar
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PTRA093302DC V1 Infineon Technologies Part_Number_Guide_Web.pdf Description: RF MOSFET LDMOS H-49248H-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPP80R1K4P7XKSA1 IPP80R1K4P7XKSA1 Infineon Technologies Infineon-IPP80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e3aa862915e5 Description: MOSFET N-CH 800V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.55 EUR
50+1.1 EUR
Mindestbestellmenge: 7
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IPP80R450P7XKSA1 IPP80R450P7XKSA1 Infineon Technologies Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
auf Bestellung 5467 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.51 EUR
50+2.24 EUR
100+2.06 EUR
500+1.63 EUR
1000+1.5 EUR
2000+1.4 EUR
5000+1.39 EUR
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IPP80R280P7XKSA1 IPP80R280P7XKSA1 Infineon Technologies Infineon-IPP80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e3d89cfa175f Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
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IPD80R280P7ATMA1 IPD80R280P7ATMA1 Infineon Technologies Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b Description: MOSFET N-CH 800V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
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S70GL02GT11FHA010 S70GL02GT11FHA010 Infineon Technologies Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
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S70GL02GT11FHI010 S70GL02GT11FHI010 Infineon Technologies Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1060 Stücke:
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10+41.72 EUR
25+40.39 EUR
40+39.72 EUR
180+37.59 EUR
360+36.63 EUR
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IRFC3004EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
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IRFC3006EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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Part Status: Obsolete
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IRFC3107EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC3205ZEB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC3206EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC3710ZEB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4020D Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4104EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4115ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4127ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4227EB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4227ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4332ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4368D Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4410ZEB Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
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IRFC4468D Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
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IRFC4468ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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Part Status: Obsolete
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IRFC4568EF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4668D Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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Part Status: Obsolete
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IRFC4668EF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC4768ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
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IRFC8721ED Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N-CH WAFER
Packaging: Bulk
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IRLC3813EB Infineon Technologies Description: MOSFET N-CH WAFER
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IRLC8259ED Infineon Technologies Description: MOSFET N-CH WAFER
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IRS2092C Infineon Technologies Part_Number_Guide_Web.pdf Description: IC AMP CLASS D STEREO DIE
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Type: Class D
Voltage - Supply: 3.3V, 5V
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRS2092CD Infineon Technologies Part_Number_Guide_Web.pdf Description: IC AMP CLASS D STEREO DIE
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Type: Class D
Voltage - Supply: 3.3V, 5V
Part Status: Obsolete
Produkt ist nicht verfügbar
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S25FS064SAGNFV030 S25FS064SAGNFV030 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8LGA
Packaging: Tray
Package / Case: 8-WLGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (5x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S26KS256SDPBHV020 S26KS256SDPBHV020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE8261EXUMA3 TLE8261EXUMA3 Infineon Technologies TLE8261E.pdf Description: IC TRANSCEIVER DSO36-38
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Supplier Device Package: PG-DSO-36-38
Grade: Automotive
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB88572P-GT-319M-SH
Hersteller: Infineon Technologies
Description: IC MCU 8BIT MICOM
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89193APF-G-346-BND-R
MB89193APF-G-346-BND-R
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Bulk
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89374-PFQ-G-BND
Hersteller: Infineon Technologies
Description: IC MCU 8BIT FLASH
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89615RPFM-G-1025-BNDE1
MB89615RPFM-G-1025-BNDE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 64QFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (12x12)
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89713APF-G-526-BND-TN
MB89713APF-G-526-BND-TN
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 80PQFP
Packaging: Bulk
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 260 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 80-QFP (14x20)
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB90561APMC-G-269-BNDE1
MB90561APMC-G-269-BNDE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 32KB MROM 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB90673PF-G-269-BND-B
MB90673PF-G-269-BND-B
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 48KB MROM 80PQFP
Packaging: Tray
Package / Case: 80-BQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16L
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: EBI/EMI, SCI, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 80-QFP (14x20)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89215-G-104-CHIP
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 320BGA
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: POR, PWM, WDT
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89485-G-212-CHIP-CN
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89193PF-G-317-BND-RE1
MB89193PF-G-317-BND-RE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB90467PFM-G-258E1
MB90467PFM-G-258E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89P568-101PFV-GE1
MB89P568-101PFV-GE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 48KB OTP 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 12.5MHz
Program Memory Size: 48KB (48K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: OTP
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I²C, Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IHW25N120E1XKSA1 Infineon-IHW25N120E1-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156a2acb89b20c1
IHW25N120E1XKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT/TRENCH 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: PG-TO247-3
IGBT Type: NPT and Trench
Switching Energy: 800µJ (off)
Gate Charge: 147 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 231 W
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ICE1CS02GXUMA1 Part_Number_Guide_Web.pdf
ICE1CS02GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTR AV CURR 65KHZ DSO-16
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 65kHz
Mode: Average Current
Supplier Device Package: PG-DSO-16-22
Part Status: Obsolete
Current - Startup: 1.3 mA
Produkt ist nicht verfügbar
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IPA80R1K4P7XKSA1 Infineon-IPA80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d90b3461516c
IPA80R1K4P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 712 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
50+1.29 EUR
100+1.13 EUR
500+0.92 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IPS80R1K4P7AKMA1 Infineon-IPS80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e490456a1aa5
IPS80R1K4P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Produkt ist nicht verfügbar
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IPU80R1K4P7AKMA1 INFN-S-A0002786355-1.pdf?t.download=true&u=5oefqw
IPU80R1K4P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.05 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IPU80R4K5P7AKMA1 Infineon-IPU80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e8ec5bf3073e
IPU80R4K5P7AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO251-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 1462 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.9 EUR
75+0.82 EUR
150+0.73 EUR
525+0.6 EUR
1050+0.55 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R1K4P7ATMA1 Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5
IPD80R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.56 EUR
5000+0.52 EUR
7500+0.5 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R450P7ATMA1 Infineon-IPD80R450P7-DS-v02_00-EN.pdf?fileId=5546d4625607bd1301562e3b26963327
IPD80R450P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.09 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R1K4P7ATMA1 Infineon-IPD80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155d9fa098058e5
IPD80R1K4P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 9151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
27+0.66 EUR
500+0.65 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R450P7ATMA1 Infineon-IPD80R450P7-DS-v02_00-EN.pdf?fileId=5546d4625607bd1301562e3b26963327
IPD80R450P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
auf Bestellung 5489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.82 EUR
10+2.46 EUR
100+1.68 EUR
500+1.35 EUR
1000+1.34 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PTFA080551EV4T500XWSA1
Hersteller: Infineon Technologies
Description: IC FET RF LDMOS 55W H-36265-2
Produkt ist nicht verfügbar
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PTFA211801EV5T350XWSA1
Hersteller: Infineon Technologies
Description: IC RF FET LDMOS H-36260-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PTRA093302DC V1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: RF MOSFET LDMOS H-49248H-4
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPP80R1K4P7XKSA1 Infineon-IPP80R1K4P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e3aa862915e5
IPP80R1K4P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 500 V
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
50+1.1 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPP80R450P7XKSA1 Infineon-IPP80R450P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e459bf0619fd
IPP80R450P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 11A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 500 V
auf Bestellung 5467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.51 EUR
50+2.24 EUR
100+2.06 EUR
500+1.63 EUR
1000+1.5 EUR
2000+1.4 EUR
5000+1.39 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IPP80R280P7XKSA1 Infineon-IPP80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255dd933d0155e3d89cfa175f
IPP80R280P7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 148 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
50+2.3 EUR
100+2.28 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R280P7ATMA1 Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b
IPD80R280P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.72 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GT11FHA010 Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70GL02GT11FHA010
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
auf Bestellung 312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+54.49 EUR
10+50.39 EUR
25+48.77 EUR
50+47.56 EUR
180+45.37 EUR
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GT11FHI010 Infineon-S70GL02GT_2-Gbit_(256-MB)_3.0V_Flash_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2615368d7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70GL02GT11FHI010
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 256M x 8, 128M x 16
DigiKey Programmable: Not Verified
auf Bestellung 1060 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+45.09 EUR
10+41.72 EUR
25+40.39 EUR
40+39.72 EUR
180+37.59 EUR
360+36.63 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFC3004EB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC3006EB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC3107EB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC3205ZEB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC3206EB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC3710ZEB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC4020D IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4104EB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC4115ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC4127ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC4227EB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4227ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4332ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4368D IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4410ZEB IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC4468D IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC4468ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC4568EF IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4668D IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFC4668EF IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC4768ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFC8721ED IR_PartNumberingSystem.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRLC3813EB
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Produkt ist nicht verfügbar
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IRLC8259ED
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
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IRS2092C Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO DIE
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Type: Class D
Voltage - Supply: 3.3V, 5V
Part Status: Obsolete
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IRS2092CD Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO DIE
Packaging: Bulk
Output Type: 2-Channel (Stereo)
Type: Class D
Voltage - Supply: 3.3V, 5V
Part Status: Obsolete
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S25FS064SAGNFV030 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGNFV030
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8LGA
Packaging: Tray
Package / Case: 8-WLGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-LGA (5x6)
Part Status: Active
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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S26KS256SDPBHV020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS256SDPBHV020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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TLE8261EXUMA3 TLE8261E.pdf
TLE8261EXUMA3
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER DSO36-38
Packaging: Tape & Reel (TR)
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Supplier Device Package: PG-DSO-36-38
Grade: Automotive
DigiKey Programmable: Not Verified
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