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SPP80P06PHXKSA1 SPP80P06PHXKSA1 Infineon Technologies SPP80P06P+H_Rev1.5.pdf?folderId=db3a3043156fd5730115d6a107c41454&fileId=db3a304325afd6e001264bbdf4a70ca7 Description: MOSFET P-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5381 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.35 EUR
50+3.41 EUR
100+3.19 EUR
500+2.54 EUR
1000+2.37 EUR
2000+2.31 EUR
Mindestbestellmenge: 3
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IRL7472L1TRPbF IRL7472L1TRPbF Infineon Technologies Infineon-IRL7472L1-DS-v02_00-EN.pdf?fileId=5546d46254e133b401555d17178250d8 Description: MOSFET N-CH 40V 375A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.59mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20082 pF @ 25 V
auf Bestellung 8000 Stücke:
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4000+3.40 EUR
Mindestbestellmenge: 4000
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IRL7472L1TRPbF IRL7472L1TRPbF Infineon Technologies Infineon-IRL7472L1-DS-v02_00-EN.pdf?fileId=5546d46254e133b401555d17178250d8 Description: MOSFET N-CH 40V 375A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.59mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20082 pF @ 25 V
auf Bestellung 10156 Stücke:
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3+7.62 EUR
10+5.87 EUR
100+4.74 EUR
500+4.11 EUR
1000+3.54 EUR
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IKW75N65EH5XKSA1 IKW75N65EH5XKSA1 Infineon Technologies Infineon-IKW75N65EH5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014df7ea80274600 Description: IGBT TRENCH 650V 90A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.3mJ (on), 900µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 223 Stücke:
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30+5.79 EUR
120+4.83 EUR
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CY8C5867LTI-LP025 CY8C5867LTI-LP025 Infineon Technologies Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9 Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 350 Stücke:
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1+30.96 EUR
10+24.81 EUR
25+23.28 EUR
80+23.13 EUR
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CY91F526KSDPMC-GSE2 CY91F526KSDPMC-GSE2 Infineon Technologies Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Last Time Buy
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6J334CKSDSE20000 Infineon Technologies Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Part Status: Active
Number of I/O: 150
Produkt ist nicht verfügbar
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CY91F526KSDPMC-GSE1 CY91F526KSDPMC-GSE1 Infineon Technologies Description: IC MCU 32BT 1.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Last Time Buy
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6J332CKSDSE20000 Infineon Technologies Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Part Status: Active
Number of I/O: 150
Produkt ist nicht verfügbar
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IDV30E65D2XKSA1 IDV30E65D2XKSA1 Infineon Technologies Infineon-IDV30E65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4f02e53ec6 Description: DIODE GP 650V 30A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 140 Stücke:
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5+3.52 EUR
50+2.83 EUR
100+2.33 EUR
Mindestbestellmenge: 5
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IPB019N08N5ATMA1 IPB019N08N5ATMA1 Infineon Technologies Infineon-IPB019N08N5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163cf77bd7313c8 Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Produkt ist nicht verfügbar
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IPB019N08N5ATMA1 IPB019N08N5ATMA1 Infineon Technologies Infineon-IPB019N08N5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163cf77bd7313c8 Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
auf Bestellung 480 Stücke:
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2+9.72 EUR
10+6.51 EUR
100+4.69 EUR
Mindestbestellmenge: 2
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IPB019N08NF2SATMA1 IPB019N08NF2SATMA1 Infineon Technologies Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe Description: TRENCH 40<-<100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 194µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
Produkt ist nicht verfügbar
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IPB019N08NF2SATMA1 IPB019N08NF2SATMA1 Infineon Technologies Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe Description: TRENCH 40<-<100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 194µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
auf Bestellung 141 Stücke:
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3+5.90 EUR
10+4.14 EUR
100+2.88 EUR
Mindestbestellmenge: 3
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IPZ65R019C7XKSA1 IPZ65R019C7XKSA1 Infineon Technologies Infineon-IPZ65R019C7-DS-v02_00-en.pdf?fileId=db3a30433e5a5024013e78cb788341cb Description: MOSFET N-CH 650V 75A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 58.3A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.92mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
auf Bestellung 1133 Stücke:
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1+27.37 EUR
30+19.05 EUR
120+18.11 EUR
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TLI5012BE1000MS2GOTOBO1 TLI5012BE1000MS2GOTOBO1 Infineon Technologies TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf Description: EVAL TLI5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLI5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
auf Bestellung 4 Stücke:
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1+44.83 EUR
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MA11022813NDSA1 Infineon Technologies Description: A-PCB MA110 22813
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MA11022938NDSA1 Infineon Technologies Description: A-PCB MA110 W22938
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY9BF316RPMC-G-JNE2 CY9BF316RPMC-G-JNE2 Infineon Technologies Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
auf Bestellung 837 Stücke:
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2+15.91 EUR
10+12.49 EUR
25+11.63 EUR
84+11.16 EUR
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XDPP1100Q024XUMA1 XDPP1100Q024XUMA1 Infineon Technologies Infineon-Infineon-DS_XDPP1100_v2.3-DataSheet-EN-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c85ecb3470185f450ba6510e4 Description: CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 2MHz
Topology: Buck, Boost, Buck-Boost, Full-Bridge, Half-Bridge
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Supplier Device Package: PG-VQFN-24-20
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control, Power Good, Soft Start, Watchdog
Serial Interfaces: PMBus
Output Phases: 1
Clock Sync: Yes
Part Status: Active
Number of Outputs: 6
auf Bestellung 4768 Stücke:
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2+15.63 EUR
10+12.18 EUR
25+11.32 EUR
100+10.37 EUR
250+9.92 EUR
500+9.65 EUR
1000+9.42 EUR
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C164CL8RMCAKXQMA5 Infineon Technologies Description: IC MCU 16BIT 64KB MROM 80MQFP
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Obsolete
Number of I/O: 59
Produkt ist nicht verfügbar
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CY8C614ALQI-S2F42 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBT-333047-02 CYBT-333047-02 Infineon Technologies Infineon-CYBT-3330xx-02_EZ-BT_WICED_Module-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7e45970cc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: RF TXRX MOD BLUETOOTHU.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 24-SMD Module
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 512kB Flash, 352kB RAM, 848kB ROM
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Power - Output: 12dBm
Data Rate: 4Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 26.4mA
Current - Transmitting: 52.5mA ~ 60.3mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I2C, I2S, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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100+11.49 EUR
250+10.92 EUR
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CYBT-333047-EVAL CYBT-333047-EVAL Infineon Technologies Infineon-CYBT-333047-EVAL_EZ-BT_Module_Arduino_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f012cd21864 Description: CYBT-333047-EVAL
Packaging: Tray
Type: Transceiver; 802.11 a/b/g/n (Wi-Fi, WiFi, WLAN), Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s), Cable(s)
Part Status: Active
For Use With/Related Products: CYBT-333047-02
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80C166MT3DDBXUMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IC MCU 16BIT CMOS 100MQFP
Packaging: Tray
Part Status: Obsolete
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80C166MT3DDBXUMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IC MCU 16BIT CMOS 100MQFP
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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EVALTOLTDC48V3KWTOBO2 EVALTOLTDC48V3KWTOBO2 Infineon Technologies Infineon-Evaluation_board_EVAL_TOLT_DC48V_3KW-UserManual-v03_00-EN.pdf?fileId=8ac78c8c80027ecd0180f0c0caf152f7 Description: EVAL BOARD FOR 2EDL8024G
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDL8024G, ILD8150 , IPTC015N10NM5 , TLS205B0EJ V50
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: No
Part Status: Active
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BCV62BE6433HTMA1 BCV62BE6433HTMA1 Infineon Technologies bcv62.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449a5795f0230 Description: TRANS 2PNP 30V 0.1A PG-SOT-1433D
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IPP120N08S404AKSA1 IPP120N08S404AKSA1 Infineon Technologies IPP_B_I120N08S4-04-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a0147638e7ed704fd Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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CY9AF344MABGL-G-XXXE1 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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S29GL128S10TFV023 S29GL128S10TFV023 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TZ740N22KOFHPSA3 TZ740N22KOFHPSA3 Infineon Technologies TZ740N.pdf Description: SCR MODULE 2.2KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
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TZ400N26KOFHPSA1 TZ400N26KOFHPSA1 Infineon Technologies Infineon-TZ400N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42f86ad4c0d Description: SCR MODULE 2.6KV 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 670 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.6 kV
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T940N16TOFXPSA1 T940N16TOFXPSA1 Infineon Technologies Infineon-T940N-DS-v03_02-en_de.pdf?fileId=db3a3043284aacd80128638a89e4536f Description: SCR MODULE 1800V 1759A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 959 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1759 A
Voltage - Off State: 1.8 kV
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FZ2400R17HP4B28BOSA2 FZ2400R17HP4B28BOSA2 Infineon Technologies Infineon-FZ2400R17HP4_B28-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e3ca8b66b48 Description: IGBT MODULE 1700V 4800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 4800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 15500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 195 nF @ 25 V
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MB95F136NBSPFV-GSE1 MB95F136NBSPFV-GSE1 Infineon Technologies 5047 Description: IC MCU 8BIT 32KB FLASH 30SSOP
Packaging: Tube
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Discontinued at Digi-Key
Number of I/O: 19
Produkt ist nicht verfügbar
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MB95F136NBSPFV-GS-N2E1 MB95F136NBSPFV-GS-N2E1 Infineon Technologies 5047 Description: IC MCU 8BIT 32KB FLASH 30SSOP
Packaging: Bulk
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Obsolete
Number of I/O: 19
Produkt ist nicht verfügbar
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MB95F136HWPF-GE1 Infineon Technologies 5047 Description: IC MCU 8BIT 32KB FLASH 28SOP
Packaging: Bulk
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
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10+1.94 EUR
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MB95F136HWPF-GE1 Infineon Technologies 5047 Description: IC MCU 8BIT 32KB FLASH 28SOP
Packaging: Bulk
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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MB95F136MBSPFV-GE1 MB95F136MBSPFV-GE1 Infineon Technologies Description: IC MCU 8BIT 32KB FLASH 30SSOP
Packaging: Tube
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Discontinued at Digi-Key
Number of I/O: 19
Produkt ist nicht verfügbar
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CYPD3172-24LQXQT CYPD3172-24LQXQT Infineon Technologies Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347 Description: CCG3PA-NFET
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
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2500+1.26 EUR
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CYPD3172-24LQXQT CYPD3172-24LQXQT Infineon Technologies Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347 Description: CCG3PA-NFET
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
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10+2.04 EUR
25+1.86 EUR
100+1.65 EUR
250+1.56 EUR
500+1.50 EUR
1000+1.45 EUR
Mindestbestellmenge: 7
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CYPD3172-24LQXQ CYPD3172-24LQXQ Infineon Technologies Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347 Description: CCG3PA-NFET
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
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8+2.22 EUR
11+1.63 EUR
25+1.48 EUR
100+1.32 EUR
490+1.26 EUR
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IPG20N06S4L11AATMA1 IPG20N06S4L11AATMA1 Infineon Technologies Infineon-IPG20N06S4L-11A-DS-v01_00-EN.pdf?fileId=5546d462503812bb01508030120e6574 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPG20N06S4L11AATMA1 IPG20N06S4L11AATMA1 Infineon Technologies Infineon-IPG20N06S4L-11A-DS-v01_00-EN.pdf?fileId=5546d462503812bb01508030120e6574 Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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5+3.87 EUR
10+2.48 EUR
100+1.69 EUR
500+1.35 EUR
1000+1.17 EUR
Mindestbestellmenge: 5
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TLE4252GATMA1 TLE4252GATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC REG LIN POS ADJ 250MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
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258+1.83 EUR
Mindestbestellmenge: 258
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BCR 519 E6327 BCR 519 E6327 Infineon Technologies BCR519.pdf Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
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IPP07N03LB G IPP07N03LB G Infineon Technologies IPP07N03LB_G.pdf Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 50A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 15 V
Produkt ist nicht verfügbar
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FP75R12N2T4PBPSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
Packaging: Bulk
Part Status: Active
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
4+150.53 EUR
Mindestbestellmenge: 4
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FP75R12N2T4PBPSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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MB89935BPFV-G-387-ERE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Tape & Reel (TR)
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Obsolete
Number of I/O: 21
Produkt ist nicht verfügbar
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MB89193APF-G-387-BND-RE1 Infineon Technologies Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
Produkt ist nicht verfügbar
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MB89193APF-G-387-BND-R MB89193APF-G-387-BND-R Infineon Technologies Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Bulk
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
Produkt ist nicht verfügbar
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FD1000R33HE3KBPSA1 FD1000R33HE3KBPSA1 Infineon Technologies Infineon-FD1000R33HE3_K-DS-v03_01-en_de.pdf?fileId=db3a30431ce5fb52011d76007b9a7266 Description: IGBT MODULE 3300V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1000A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Produkt ist nicht verfügbar
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FF1000R17IE4PBOSA1 FF1000R17IE4PBOSA1 Infineon Technologies Infineon-FF1000R17IE4P-DS-v03_02-EN.pdf?fileId=5546d46253a864fe0153e62757277813 Description: IGBT MODULE 1700V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
auf Bestellung 2 Stücke:
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1+1021.35 EUR
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FZ1000R33HE3BPSA1 FZ1000R33HE3BPSA1 Infineon Technologies Infineon-FZ1000R33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d760f30227290 Description: IGBT MODULE 3300V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
auf Bestellung 3 Stücke:
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1+2615.22 EUR
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S70GL02GS12FHBV23 S70GL02GS12FHBV23 Infineon Technologies Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 16
Produkt ist nicht verfügbar
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S70GL02GS11FHSS60 S70GL02GS11FHSS60 Infineon Technologies Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S70GL02GS11FHI023 S70GL02GS11FHI023 Infineon Technologies Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S70GL02GS12FHBV20 S70GL02GS12FHBV20 Infineon Technologies Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 16
Produkt ist nicht verfügbar
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SPP80P06PHXKSA1 SPP80P06P+H_Rev1.5.pdf?folderId=db3a3043156fd5730115d6a107c41454&fileId=db3a304325afd6e001264bbdf4a70ca7
SPP80P06PHXKSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5381 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.35 EUR
50+3.41 EUR
100+3.19 EUR
500+2.54 EUR
1000+2.37 EUR
2000+2.31 EUR
Mindestbestellmenge: 3
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IRL7472L1TRPbF Infineon-IRL7472L1-DS-v02_00-EN.pdf?fileId=5546d46254e133b401555d17178250d8
IRL7472L1TRPbF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 375A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.59mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20082 pF @ 25 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+3.40 EUR
Mindestbestellmenge: 4000
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IRL7472L1TRPbF Infineon-IRL7472L1-DS-v02_00-EN.pdf?fileId=5546d46254e133b401555d17178250d8
IRL7472L1TRPbF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 375A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
Rds On (Max) @ Id, Vgs: 0.59mOhm @ 195A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DirectFET™ Isometric L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20082 pF @ 25 V
auf Bestellung 10156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.62 EUR
10+5.87 EUR
100+4.74 EUR
500+4.11 EUR
1000+3.54 EUR
Mindestbestellmenge: 3
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IKW75N65EH5XKSA1 Infineon-IKW75N65EH5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014df7ea80274600
IKW75N65EH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 90A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 28ns/174ns
Switching Energy: 2.3mJ (on), 900µJ (off)
Test Condition: 400V, 75A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.14 EUR
30+5.79 EUR
120+4.83 EUR
Mindestbestellmenge: 2
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CY8C5867LTI-LP025 Infineon-PSoC_5LP_CY8C58LP_Family_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec547013ab9
CY8C5867LTI-LP025
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 1x20b, 1x12b; D/A 4x8b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+30.96 EUR
10+24.81 EUR
25+23.28 EUR
80+23.13 EUR
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CY91F526KSDPMC-GSE2 Infineon-CY91520_Series_32-bit_FR81S_Microcontroller-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda0e215ba3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY91F526KSDPMC-GSE2
Hersteller: Infineon Technologies
Description: IC MCU 32B 1.0625MB FLSH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b R2R
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Last Time Buy
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6J334CKSDSE20000 Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e
Hersteller: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.2V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Part Status: Active
Number of I/O: 150
Produkt ist nicht verfügbar
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CY91F526KSDPMC-GSE1
CY91F526KSDPMC-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 32BT 1.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.0625MB (1.0625M x 8)
RAM Size: 136K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: FR81S
Data Converters: A/D 48x12b SAR; D/A 2x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Last Time Buy
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S6J332CKSDSE20000 Infineon-S6J3310_Series_S6J3320_Series_S6J3330_Series_S6J3340_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v17_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0edb39375e0e
Hersteller: Infineon Technologies
Description: TRAVEO-40NM
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 544K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 112K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 48x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Part Status: Active
Number of I/O: 150
Produkt ist nicht verfügbar
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IDV30E65D2XKSA1 Infineon-IDV30E65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c4f02e53ec6
IDV30E65D2XKSA1
Hersteller: Infineon Technologies
Description: DIODE GP 650V 30A TO220-2FP
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.52 EUR
50+2.83 EUR
100+2.33 EUR
Mindestbestellmenge: 5
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IPB019N08N5ATMA1 Infineon-IPB019N08N5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163cf77bd7313c8
IPB019N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
Produkt ist nicht verfügbar
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IPB019N08N5ATMA1 Infineon-IPB019N08N5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0163cf77bd7313c8
IPB019N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 224W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 154µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8970 pF @ 40 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.72 EUR
10+6.51 EUR
100+4.69 EUR
Mindestbestellmenge: 2
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IPB019N08NF2SATMA1 Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe
IPB019N08NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 194µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
Produkt ist nicht verfügbar
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IPB019N08NF2SATMA1 Infineon-IPB019N08NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4b169ef1afe
IPB019N08NF2SATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 166A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 194µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 40 V
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.90 EUR
10+4.14 EUR
100+2.88 EUR
Mindestbestellmenge: 3
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IPZ65R019C7XKSA1 Infineon-IPZ65R019C7-DS-v02_00-en.pdf?fileId=db3a30433e5a5024013e78cb788341cb
IPZ65R019C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 75A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 58.3A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.92mA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 400 V
auf Bestellung 1133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.37 EUR
30+19.05 EUR
120+18.11 EUR
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TLI5012BE1000MS2GOTOBO1 TLx5012B_2go_EVK_Rev1.0_9-27-18.pdf
TLI5012BE1000MS2GOTOBO1
Hersteller: Infineon Technologies
Description: EVAL TLI5012B ANGLE SENSOR
Packaging: Bulk
Sensor Type: Magnetic, Rotary Position
Utilized IC / Part: TLI5012B
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: 360°
Part Status: Active
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+44.83 EUR
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MA11022813NDSA1
Hersteller: Infineon Technologies
Description: A-PCB MA110 22813
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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MA11022938NDSA1
Hersteller: Infineon Technologies
Description: A-PCB MA110 W22938
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY9BF316RPMC-G-JNE2 Infineon-CY9B310R_Series_32_Bit_ARM_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf3ea06447&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF316RPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Active
Number of I/O: 103
DigiKey Programmable: Not Verified
auf Bestellung 837 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.91 EUR
10+12.49 EUR
25+11.63 EUR
84+11.16 EUR
Mindestbestellmenge: 2
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XDPP1100Q024XUMA1 Infineon-Infineon-DS_XDPP1100_v2.3-DataSheet-EN-DataSheet-v02_03-EN.pdf?fileId=8ac78c8c85ecb3470185f450ba6510e4
XDPP1100Q024XUMA1
Hersteller: Infineon Technologies
Description: CONTROLLER
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 2MHz
Topology: Buck, Boost, Buck-Boost, Full-Bridge, Half-Bridge
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Supplier Device Package: PG-VQFN-24-20
Synchronous Rectifier: Yes
Control Features: Enable, Frequency Control, Power Good, Soft Start, Watchdog
Serial Interfaces: PMBus
Output Phases: 1
Clock Sync: Yes
Part Status: Active
Number of Outputs: 6
auf Bestellung 4768 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.63 EUR
10+12.18 EUR
25+11.32 EUR
100+10.37 EUR
250+9.92 EUR
500+9.65 EUR
1000+9.42 EUR
Mindestbestellmenge: 2
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C164CL8RMCAKXQMA5
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 80MQFP
Packaging: Tray
Package / Case: 80-QFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: C166
Data Converters: A/D 8x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.75V ~ 5.5V
Connectivity: CANbus, EBI/EMI, SPI, SSC, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-MQFP-80-7
Part Status: Obsolete
Number of I/O: 59
Produkt ist nicht verfügbar
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CY8C614ALQI-S2F42 Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Part Status: Active
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYBT-333047-02 Infineon-CYBT-3330xx-02_EZ-BT_WICED_Module-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7e45970cc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYBT-333047-02
Hersteller: Infineon Technologies
Description: RF TXRX MOD BLUETOOTHU.FL SMD
Packaging: Cut Tape (CT)
Package / Case: 24-SMD Module
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.402GHz ~ 2.48GHz
Memory Size: 512kB Flash, 352kB RAM, 848kB ROM
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 3.6V
Power - Output: 12dBm
Data Rate: 4Mbps
Protocol: Bluetooth v5.0
Current - Receiving: 26.4mA
Current - Transmitting: 52.5mA ~ 60.3mA
Antenna Type: Antenna Not Included, U.FL
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: ADC, I2C, I2S, PCM, PWM, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.14 EUR
10+13.13 EUR
25+12.44 EUR
100+11.49 EUR
250+10.92 EUR
Mindestbestellmenge: 2
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CYBT-333047-EVAL Infineon-CYBT-333047-EVAL_EZ-BT_Module_Arduino_Evaluation_Board-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0f012cd21864
CYBT-333047-EVAL
Hersteller: Infineon Technologies
Description: CYBT-333047-EVAL
Packaging: Tray
Type: Transceiver; 802.11 a/b/g/n (Wi-Fi, WiFi, WLAN), Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s), Cable(s)
Part Status: Active
For Use With/Related Products: CYBT-333047-02
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+80.31 EUR
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80C166MT3DDBXUMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
Hersteller: Infineon Technologies
Description: IC MCU 16BIT CMOS 100MQFP
Packaging: Tray
Part Status: Obsolete
auf Bestellung 1183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+51.76 EUR
Mindestbestellmenge: 11
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80C166MT3DDBXUMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
Hersteller: Infineon Technologies
Description: IC MCU 16BIT CMOS 100MQFP
Packaging: Tray
Part Status: Obsolete
Produkt ist nicht verfügbar
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EVALTOLTDC48V3KWTOBO2 Infineon-Evaluation_board_EVAL_TOLT_DC48V_3KW-UserManual-v03_00-EN.pdf?fileId=8ac78c8c80027ecd0180f0c0caf152f7
EVALTOLTDC48V3KWTOBO2
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2EDL8024G
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDL8024G, ILD8150 , IPTC015N10NM5 , TLS205B0EJ V50
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC)
Embedded: No
Part Status: Active
Produkt ist nicht verfügbar
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BCV62BE6433HTMA1 bcv62.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449a5795f0230
BCV62BE6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS 2PNP 30V 0.1A PG-SOT-1433D
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT-143-3D
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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IPP120N08S404AKSA1 IPP_B_I120N08S4-04-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a0147638e7ed704fd
IPP120N08S404AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY9AF344MABGL-G-XXXE1
Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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S29GL128S10TFV023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL128S10TFV023
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TZ740N22KOFHPSA3 TZ740N.pdf
TZ740N22KOFHPSA3
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 1500A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 500 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 819 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 2.2 kV
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+676.44 EUR
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TZ400N26KOFHPSA1 Infineon-TZ400N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42f86ad4c0d
TZ400N26KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.6KV 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 670 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 2.6 kV
auf Bestellung 3 Stücke:
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Anzahl Preis
1+351.61 EUR
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T940N16TOFXPSA1 Infineon-T940N-DS-v03_02-en_de.pdf?fileId=db3a3043284aacd80128638a89e4536f
T940N16TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 1759A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 959 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1759 A
Voltage - Off State: 1.8 kV
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+270.56 EUR
18+253.41 EUR
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FZ2400R17HP4B28BOSA2 Infineon-FZ2400R17HP4_B28-DS-v03_01-EN.pdf?fileId=5546d462525dbac401527e3ca8b66b48
FZ2400R17HP4B28BOSA2
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 4800A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2400A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 4800 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 15500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 195 nF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2278.88 EUR
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MB95F136NBSPFV-GSE1 5047
MB95F136NBSPFV-GSE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 30SSOP
Packaging: Tube
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Discontinued at Digi-Key
Number of I/O: 19
Produkt ist nicht verfügbar
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MB95F136NBSPFV-GS-N2E1 5047
MB95F136NBSPFV-GS-N2E1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 30SSOP
Packaging: Bulk
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Obsolete
Number of I/O: 19
Produkt ist nicht verfügbar
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MB95F136HWPF-GE1 5047
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 28SOP
Packaging: Bulk
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
Mindestbestellmenge: 10
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MB95F136HWPF-GE1 5047
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 28SOP
Packaging: Bulk
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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MB95F136MBSPFV-GE1
MB95F136MBSPFV-GE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 30SSOP
Packaging: Tube
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 8x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Discontinued at Digi-Key
Number of I/O: 19
Produkt ist nicht verfügbar
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CYPD3172-24LQXQT Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347
CYPD3172-24LQXQT
Hersteller: Infineon Technologies
Description: CCG3PA-NFET
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
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Anzahl Preis
2500+1.26 EUR
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CYPD3172-24LQXQT Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347
CYPD3172-24LQXQT
Hersteller: Infineon Technologies
Description: CCG3PA-NFET
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
10+2.04 EUR
25+1.86 EUR
100+1.65 EUR
250+1.56 EUR
500+1.50 EUR
1000+1.45 EUR
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CYPD3172-24LQXQ Infineon-CCG3PA-NFET_USB_Type-C_Port_Controller-AdditionalTechnicalInformation-v02_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea4c007347
CYPD3172-24LQXQ
Hersteller: Infineon Technologies
Description: CCG3PA-NFET
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
11+1.63 EUR
25+1.48 EUR
100+1.32 EUR
490+1.26 EUR
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IPG20N06S4L11AATMA1 Infineon-IPG20N06S4L-11A-DS-v01_00-EN.pdf?fileId=5546d462503812bb01508030120e6574
IPG20N06S4L11AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPG20N06S4L11AATMA1 Infineon-IPG20N06S4L-11A-DS-v01_00-EN.pdf?fileId=5546d462503812bb01508030120e6574
IPG20N06S4L11AATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 28µA
Supplier Device Package: PG-TDSON-8-10
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.87 EUR
10+2.48 EUR
100+1.69 EUR
500+1.35 EUR
1000+1.17 EUR
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TLE4252GATMA1 fundamentals-of-power-semiconductors
TLE4252GATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 250MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
auf Bestellung 1635 Stücke:
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Anzahl Preis
258+1.83 EUR
Mindestbestellmenge: 258
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BCR 519 E6327 BCR519.pdf
BCR 519 E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
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IPP07N03LB G IPP07N03LB_G.pdf
IPP07N03LB G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 50A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2782 pF @ 15 V
Produkt ist nicht verfügbar
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FP75R12N2T4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Packaging: Bulk
Part Status: Active
auf Bestellung 420 Stücke:
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Anzahl Preis
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FP75R12N2T4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Packaging: Tray
Part Status: Active
Produkt ist nicht verfügbar
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MB89935BPFV-G-387-ERE1 ProductGuide_2008.1.pdf
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Tape & Reel (TR)
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Obsolete
Number of I/O: 21
Produkt ist nicht verfügbar
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MB89193APF-G-387-BND-RE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Tube
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
Produkt ist nicht verfügbar
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MB89193APF-G-387-BND-R
MB89193APF-G-387-BND-R
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM 28SOP
Packaging: Bulk
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: POR, WDT
Supplier Device Package: 28-SOP
Part Status: Obsolete
Number of I/O: 16
Produkt ist nicht verfügbar
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FD1000R33HE3KBPSA1 Infineon-FD1000R33HE3_K-DS-v03_01-en_de.pdf?fileId=db3a30431ce5fb52011d76007b9a7266
FD1000R33HE3KBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Brake Chopper
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1000A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 11500 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
Produkt ist nicht verfügbar
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FF1000R17IE4PBOSA1 Infineon-FF1000R17IE4P-DS-v03_02-EN.pdf?fileId=5546d46253a864fe0153e62757277813
FF1000R17IE4PBOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
auf Bestellung 2 Stücke:
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Anzahl Preis
1+1021.35 EUR
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FZ1000R33HE3BPSA1 Infineon-FZ1000R33HE3-DS-v03_02-EN.pdf?fileId=db3a30431ce5fb52011d760f30227290
FZ1000R33HE3BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 3300V 1000A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 190 nF @ 25 V
auf Bestellung 3 Stücke:
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1+2615.22 EUR
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S70GL02GS12FHBV23 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70GL02GS12FHBV23
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 16
Produkt ist nicht verfügbar
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S70GL02GS11FHSS60
S70GL02GS11FHSS60
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S70GL02GS11FHI023 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70GL02GS11FHI023
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S70GL02GS12FHBV20 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S70GL02GS12FHBV20
Hersteller: Infineon Technologies
Description: IC FLASH 2GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 16
Produkt ist nicht verfügbar
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