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BSC042N03S G BSC042N03S G Infineon Technologies BSC042N03S_G.pdf Description: MOSFET N-CH 30V 20A/95A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC048N025S G BSC048N025S G Infineon Technologies BSC048N025S_Rev1.0_G.pdf Description: MOSFET N-CH 25V 19A/89A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 35µA
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC052N03S G BSC052N03S G Infineon Technologies BSC052N03S_G.pdf Description: MOSFET N-CH 30V 80A TDSON-8
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BSC059N03S G BSC059N03S G Infineon Technologies BSC059N03S_G.pdf Description: MOSFET N-CH 30V 17.5A/73A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 17.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 15 V
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BSC094N03S G BSC094N03S G Infineon Technologies BSC094N03S_G.pdf Description: MOSFET N-CH 30V 35A TDSON-8
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BSC106N025S G BSC106N025S G Infineon Technologies BSC106N025S_G.pdf Description: MOSFET N-CH 25V 13A/30A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 2.8W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC119N03S G BSC119N03S G Infineon Technologies BSC119N03S_G.pdf Description: MOSFET N-CH 30V 11.9A/30A TDSON
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 2.8W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSL211SPL6327HTSA1 BSL211SPL6327HTSA1 Infineon Technologies dgdl?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304342c787030142db9dab0e1414 Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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BSL307SPL6327HTSA1 BSL307SPL6327HTSA1 Infineon Technologies BSL307SP_Rev+2.0.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304342c787030142dca7f3721687 Description: MOSFET P-CH 30V 5.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSO052N03S BSO052N03S Infineon Technologies BSO052N03S.pdf Description: MOSFET N-CH 30V 14A 8DSO
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BSO064N03S BSO064N03S Infineon Technologies BSO064N03S.pdf Description: MOSFET N-CH 30V 12A 8DSO
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BSO072N03S BSO072N03S Infineon Technologies BSO072N03S.pdf Description: MOSFET N-CH 30V 12A 8DSO
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BSO080P03SNTMA1 BSO080P03SNTMA1 Infineon Technologies BSO080P03S.pdf Description: MOSFET P-CH 30V 12.6A 8DSO
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
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BSO094N03S BSO094N03S Infineon Technologies BSO094N03S.pdf Description: MOSFET N-CH 30V 10A 8DSO
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BSO104N03S BSO104N03S Infineon Technologies BSO104N03S.pdf Description: MOSFET N-CH 30V 10A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSO130P03SNTMA1 BSO130P03SNTMA1 Infineon Technologies BSO130P03S.pdf Description: MOSFET P-CH 30V 9.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
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BSO150N03 BSO150N03 Infineon Technologies BSO150N03.pdf Description: MOSFET 2N-CH 30V 7.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
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BSO200N03 BSO200N03 Infineon Technologies BSO200N03.pdf Description: MOSFET 2N-CH 30V 6.6A 8DSO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
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BSO200N03S BSO200N03S Infineon Technologies BSO200N03S.pdf Description: MOSFET N-CH 30V 7A 8DSO
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 10µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
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BSO200P03SNTMA1 BSO200P03SNTMA1 Infineon Technologies BSO200P03S.pdf Description: MOSFET P-CH 30V 7.4A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSO300N03S BSO300N03S Infineon Technologies BSO300N03S.pdf Description: MOSFET N-CH 30V 5.7A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 8µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSO303PNTMA1 BSO303PNTMA1 Infineon Technologies BSO303P.pdf Description: MOSFET 2P-CH 30V 8.2A 8DSO
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
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BSO350N03 BSO350N03 Infineon Technologies BSO350N03.pdf Description: MOSFET 2N-CH 30V 5A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: PG-DSO-8
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BSO604NS2XUMA1 BSO604NS2XUMA1 Infineon Technologies INFNS11930-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 55V 5A 8DSO
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 30µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 55V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSO613SPV BSO613SPV Infineon Technologies BSO613SPVG.pdf Description: MOSFET P-CH 60V 3.44A 8DSO
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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BSO613SPVGHUMA1 BSO613SPVGHUMA1 Infineon Technologies BSO613SPVG.pdf Description: MOSFET P-CH 60V 3.44A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSP50E6327HTSA1 BSP50E6327HTSA1 Infineon Technologies bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf Description: TRANS NPN DARL 45V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP 51 E6327 BSP 51 E6327 Infineon Technologies bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf Description: TRANS NPN DARL 60V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP 52 E6327 BSP 52 E6327 Infineon Technologies bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf Description: TRANS NPN DARL 80V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP60E6327HTSA1 BSP60E6327HTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 45V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP61E6327HTSA1 BSP61E6327HTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 60V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP62E6327HTSA1 BSP62E6327HTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 80V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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BSP125 E6327 BSP125 E6327 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b50cae9702806 Description: MOSFET N-CH 600V 120MA SOT223-4
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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BSP125 E6433 BSP125 E6433 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b50cae9702806 Description: MOSFET N-CH 600V 120MA SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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BSP125L6327HTSA1 BSP125L6327HTSA1 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b50cae9702806 Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP125L6433HTMA1 BSP125L6433HTMA1 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b50cae9702806 Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP129L6327HTSA1 BSP129L6327HTSA1 Infineon Technologies Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP129L6906HTSA1 BSP129L6906HTSA1 Infineon Technologies Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP135 E6327 BSP135 E6327 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c1a8752013c1fd4c839399b Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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BSP135 E6906 BSP135 E6906 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c1a8752013c1fd4c839399b Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP135L6327HTSA1 BSP135L6327HTSA1 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c1a8752013c1fd4c839399b Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP135L6906HTSA1 BSP135L6906HTSA1 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c1a8752013c1fd4c839399b Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP149 E6327 BSP149 E6327 Infineon Technologies Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP149 E6906 BSP149 E6906 Infineon Technologies Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSP149L6327HTSA1 BSP149L6327HTSA1 Infineon Technologies Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP149L6906HTSA1 BSP149L6906HTSA1 Infineon Technologies Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP170PL6327HTSA1 BSP170PL6327HTSA1 Infineon Technologies dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fdad470576f Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP171PL6327HTSA1 BSP171PL6327HTSA1 Infineon Technologies Infineon-BSP171P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b6004f59a57fa Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 460µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP295L6327HTSA1 BSP295L6327HTSA1 Infineon Technologies Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
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BSP296 E6433 BSP296 E6433 Infineon Technologies BSP296.pdf Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
Qualification: AEC-Q101
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BSP296L6327HTSA1 BSP296L6327HTSA1 Infineon Technologies BSP296.pdf Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
Qualification: AEC-Q101
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BSP296L6433HTMA1 BSP296L6433HTMA1 Infineon Technologies BSP296.pdf Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
Qualification: AEC-Q101
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BSP297 E6327 BSP297 E6327 Infineon Technologies BSP297_Rev2.2_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433b47825b013b51250a8528c2 Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP297L6327HTSA1 BSP297L6327HTSA1 Infineon Technologies BSP297_Rev2.2_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433b47825b013b51250a8528c2 Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
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BSP298 E6327 BSP298 E6327 Infineon Technologies BSP298.pdf Description: MOSFET N-CH 400V 500MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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BSP298L6327HUSA1 BSP298L6327HUSA1 Infineon Technologies BSP298.pdf Description: MOSFET N-CH 400V 500MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Qualification: AEC-Q101
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BSP299 E6327 BSP299 E6327 Infineon Technologies BSP299.pdf Description: MOSFET N-CH 500V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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BSP299L6327HUSA1 BSP299L6327HUSA1 Infineon Technologies BSP299.pdf Description: MOSFET N-CH 500V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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BSP300 E6327 BSP300 E6327 Infineon Technologies BSP300.pdf Description: MOSFET N-CH 800V 190MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 190mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4-21
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
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BSP300L6327HUSA1 BSP300L6327HUSA1 Infineon Technologies BSP300.pdf Description: MOSFET N-CH 800V 190MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC042N03S G BSC042N03S_G.pdf
BSC042N03S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A/95A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC048N025S G BSC048N025S_Rev1.0_G.pdf
BSC048N025S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 19A/89A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 35µA
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC052N03S G BSC052N03S_G.pdf
BSC052N03S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 80A TDSON-8
Produkt ist nicht verfügbar
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BSC059N03S G BSC059N03S_G.pdf
BSC059N03S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17.5A/73A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 17.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 15 V
Produkt ist nicht verfügbar
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BSC094N03S G BSC094N03S_G.pdf
BSC094N03S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 35A TDSON-8
Produkt ist nicht verfügbar
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BSC106N025S G BSC106N025S_G.pdf
BSC106N025S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 13A/30A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 2.8W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC119N03S G BSC119N03S_G.pdf
BSC119N03S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11.9A/30A TDSON
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 2.8W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSL211SPL6327HTSA1 dgdl?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304342c787030142db9dab0e1414
BSL211SPL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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BSL307SPL6327HTSA1 BSL307SP_Rev+2.0.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304342c787030142dca7f3721687
BSL307SPL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 5.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSO052N03S BSO052N03S.pdf
BSO052N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8DSO
Produkt ist nicht verfügbar
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BSO064N03S BSO064N03S.pdf
BSO064N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A 8DSO
Produkt ist nicht verfügbar
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BSO072N03S BSO072N03S.pdf
BSO072N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A 8DSO
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BSO080P03SNTMA1 BSO080P03S.pdf
BSO080P03SNTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
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BSO094N03S BSO094N03S.pdf
BSO094N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10A 8DSO
Produkt ist nicht verfügbar
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BSO104N03S BSO104N03S.pdf
BSO104N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSO130P03SNTMA1 BSO130P03S.pdf
BSO130P03SNTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 9.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
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BSO150N03 BSO150N03.pdf
BSO150N03
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Produkt ist nicht verfügbar
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BSO200N03 BSO200N03.pdf
BSO200N03
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.6A 8DSO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
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BSO200N03S BSO200N03S.pdf
BSO200N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 7A 8DSO
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 10µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
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BSO200P03SNTMA1 BSO200P03S.pdf
BSO200P03SNTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 7.4A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSO300N03S BSO300N03S.pdf
BSO300N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 5.7A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 8µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSO303PNTMA1 BSO303P.pdf
BSO303PNTMA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 8.2A 8DSO
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BSO350N03 BSO350N03.pdf
BSO350N03
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 5A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: PG-DSO-8
Produkt ist nicht verfügbar
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BSO604NS2XUMA1 INFNS11930-1.pdf?t.download=true&u=5oefqw
BSO604NS2XUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 55V 5A 8DSO
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 30µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 55V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSO613SPV BSO613SPVG.pdf
BSO613SPV
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 3.44A 8DSO
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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BSO613SPVGHUMA1 BSO613SPVG.pdf
BSO613SPVGHUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 3.44A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP50E6327HTSA1 bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf
BSP50E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 45V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP 51 E6327 bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf
BSP 51 E6327
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 60V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP 52 E6327 bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf
BSP 52 E6327
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 80V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP60E6327HTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP60E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP61E6327HTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP61E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 60V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP62E6327HTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP62E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 80V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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BSP125 E6327 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b50cae9702806
BSP125 E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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BSP125 E6433 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b50cae9702806
BSP125 E6433
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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BSP125L6327HTSA1 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b50cae9702806
BSP125L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSP125L6433HTMA1 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b50cae9702806
BSP125L6433HTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Qualification: AEC-Q101
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BSP129L6327HTSA1 Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f
BSP129L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP129L6906HTSA1 Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f
BSP129L6906HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP135 E6327 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c1a8752013c1fd4c839399b
BSP135 E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BSP135 E6906 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c1a8752013c1fd4c839399b
BSP135 E6906
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP135L6327HTSA1 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c1a8752013c1fd4c839399b
BSP135L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP135L6906HTSA1 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433c1a8752013c1fd4c839399b
BSP135L6906HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP149 E6327 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149 E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP149 E6906 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149 E6906
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BSP149L6327HTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP149L6906HTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149L6906HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP170PL6327HTSA1 dgdl?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fdad470576f
BSP170PL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP171PL6327HTSA1 Infineon-BSP171P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b6004f59a57fa
BSP171PL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 460µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP295L6327HTSA1 Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f
BSP295L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
Produkt ist nicht verfügbar
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BSP296 E6433 BSP296.pdf
BSP296 E6433
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP296L6327HTSA1 BSP296.pdf
BSP296L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP296L6433HTMA1 BSP296.pdf
BSP296L6433HTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP297 E6327 BSP297_Rev2.2_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433b47825b013b51250a8528c2
BSP297 E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BSP297L6327HTSA1 BSP297_Rev2.2_.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433b47825b013b51250a8528c2
BSP297L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
Produkt ist nicht verfügbar
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BSP298 E6327 BSP298.pdf
BSP298 E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 400V 500MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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BSP298L6327HUSA1 BSP298.pdf
BSP298L6327HUSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 400V 500MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP299 E6327 BSP299.pdf
BSP299 E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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BSP299L6327HUSA1 BSP299.pdf
BSP299L6327HUSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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BSP300 E6327 BSP300.pdf
BSP300 E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 190MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 190mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4-21
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Produkt ist nicht verfügbar
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BSP300L6327HUSA1 BSP300.pdf
BSP300L6327HUSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 190MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4-21
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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