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BFR 93AW E6327 BFR 93AW E6327 Infineon Technologies Infineon-BFR93AW-DS-v01_01-en.pdf?fileId=db3a30431441fb5d0114acaaec8c148f Description: RF TRANS NPN 12V 6GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
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BFR 949L3 E6327 BFR 949L3 E6327 Infineon Technologies BFR949L3.pdf Description: RF TRANS NPN 10V 9GHZ TSLP-3-1
Part Status: Obsolete
Supplier Device Package: PG-TSLP-3-1
Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 50mA
Power - Max: 250mW
Gain: 21.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
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BFR 949T E6327 BFR 949T E6327 Infineon Technologies BFR949T.pdf Description: RF TRANS NPN 10V 9GHZ PG-SC75-3D
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SC75-3D
Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 35mA
Power - Max: 250mW
Gain: 20dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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BFS17PE6327HTSA1 BFS17PE6327HTSA1 Infineon Technologies bfs17p.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142707fafd06b5 Description: RF TRANS NPN 15V 1.4GHZ PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
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BFS 17P E6433 BFS 17P E6433 Infineon Technologies bfs17p.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142707fafd06b5 Description: RF TRANS NPN 15V 1.4GHZ PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Active
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BFS17WE6327HTSA1 BFS17WE6327HTSA1 Infineon Technologies bfs17w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114270c42a906bd Description: RF TRANS NPN 15V 1.4GHZ PGSOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
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BFS 481 E6327 BFS 481 E6327 Infineon Technologies bfs481.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114270d383406be&location=.en.product.findProductTypeByName.html_dgdl_bfs481.pdf Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
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BFS 483 E6327 BFS 483 E6327 Infineon Technologies bfs483.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142710876006c5 Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
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BG3123RE6327HTSA1 BG3123RE6327HTSA1 Infineon Technologies BG3123.pdf Description: RF MOSFET 5V SOT363
Current - Test: 14 mA
Voltage - Test: 5 V
Voltage - Rated: 8 V
Supplier Device Package: PG-SOT363-PO
Noise Figure: 1.8dB
Technology: MOSFET (Metal Oxide)
Gain: 25dB
Configuration: 2 N-Channel (Dual)
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA, 20mA
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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BG3130E6327HTSA1 BG3130E6327HTSA1 Infineon Technologies BG3130.pdf Description: RF MOSFET 5V SOT363
Current - Test: 14 mA
Voltage - Test: 5 V
Voltage - Rated: 8 V
Part Status: Obsolete
Supplier Device Package: PG-SOT363-PO
Noise Figure: 1.3dB
Technology: MOSFET (Metal Oxide)
Gain: 24dB
Configuration: 2 N-Channel (Dual)
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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BG3130RE6327BTSA1 BG3130RE6327BTSA1 Infineon Technologies BG3130.pdf Description: RF MOSFET 5V SOT363
Current - Test: 14 mA
Voltage - Test: 5 V
Voltage - Rated: 8 V
Part Status: Obsolete
Supplier Device Package: PG-SOT363-PO
Noise Figure: 1.3dB
Technology: MOSFET (Metal Oxide)
Gain: 24dB
Configuration: 2 N-Channel (Dual)
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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BGA416E6327HTSA1 BGA416E6327HTSA1 Infineon Technologies BGA416.pdf Description: IC AMP CELL 100MHZ-3GHZ SOT143-3
Test Frequency: 1.8GHz
P1dB: -3dBm
Noise Figure: 1.6dB
Current - Supply: 5.5mA
Gain: 11dB
Voltage - Supply: 2.5V ~ 5V
RF Type: Cellular, GSM, CDMA, TDMA, UMTS
Frequency: 100MHz ~ 3GHz
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-SOT-143-3D
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BGA420E6327BTSA1 BGA420E6327BTSA1 Infineon Technologies bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637 Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
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BGA 428 E6327 BGA 428 E6327 Infineon Technologies BGA428_Rev2.3.pdf Description: IC AMP CELL 1.4-2.5GHZ SOT363-PO
Supplier Device Package: PG-SOT363-PO
Test Frequency: 1.8GHz
P1dB: -19dBm
Noise Figure: 1.4dB
Current - Supply: 12mA
Gain: 20dB
Voltage - Supply: 2.4V ~ 3V
RF Type: Cellular, GSM, DCS, PCS
Frequency: 1.4GHz ~ 2.5GHz
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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BGA615L7E6327XTSA1 BGA615L7E6327XTSA1 Infineon Technologies BGA615L7.pdf Description: IC RF AMP GPS 1.575GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.575GHz
RF Type: GPS
Voltage - Supply: 2.4V ~ 3.2V
Gain: 18dB
Current - Supply: 5.6mA
Noise Figure: 0.9dB
Supplier Device Package: PG-TSLP-7-1
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BGA 619 E6327 BGA 619 E6327 Infineon Technologies BGA619.pdf Description: AMP HI IP3 PCS LOW NOISE TSLP-7
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BGA 622 E6327 BGA 622 E6327 Infineon Technologies BGA622.pdf Description: IC AMP 802.15 500MHZ-6GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 2.75V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Discontinued at Digi-Key
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BGA622L7E6327XTSA1 BGA622L7E6327XTSA1 Infineon Technologies GPS%20Front-end%20components_2010.pdf?fileId=db3a30431ddc9372011e39e7f49f5e6d Description: IC AMP 802.15 500MHZ-6GHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 2.75V
Gain: 17.5dB
Current - Supply: 10mA
Noise Figure: 0.95dB
P1dB: -20dBm
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
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BGB 540 E6327 BGB 540 E6327 Infineon Technologies BGB540.pdf Description: TRANSISTOR RF ACT BIAS SOT-343
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BGF 100 E6327 BGF 100 E6327 Infineon Technologies BGF100.pdf Description: IC FILTER/ESD PROT RF S-WLP-11
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BGF 104C E6327 BGF 104C E6327 Infineon Technologies BGF104.pdf Description: IC HSMMC FILTER/ESD PROT S-WLP-6
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BGF110E6327XT BGF110E6327XT Infineon Technologies BGF110.pdf Description: IC FILTER HSMMC ESD PROT WLP-24
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BSA223SP BSA223SP Infineon Technologies BSA223SP.pdf Description: MOSFET P-CH 20V 390MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SC-75
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
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BSC022N03S BSC022N03S Infineon Technologies BSC022N03S.pdf Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
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BSC024N025S G BSC024N025S G Infineon Technologies BSC024N025S_Rev1.0_G.pdf Description: MOSFET N-CH 25V 27A/100A TDSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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BSC029N025S G BSC029N025S G Infineon Technologies BSC029N025S_Rev1.0.pdf Description: MOSFET N-CH 25V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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BSC032N03S BSC032N03S Infineon Technologies BSC032N03S.pdf Description: MOSFET N-CH 30V 23A/100A TDSON
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
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BSC037N025S G BSC037N025S G Infineon Technologies BSC037N025S_G.pdf Description: MOSFET N-CH 25V 21A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 2.8W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC042N03S G BSC042N03S G Infineon Technologies BSC042N03S_G.pdf Description: MOSFET N-CH 30V 20A/95A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC048N025S G BSC048N025S G Infineon Technologies BSC048N025S_Rev1.0_G.pdf Description: MOSFET N-CH 25V 19A/89A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 35µA
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC052N03S G BSC052N03S G Infineon Technologies BSC052N03S_G.pdf Description: MOSFET N-CH 30V 80A TDSON-8
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BSC059N03S G BSC059N03S G Infineon Technologies BSC059N03S_G.pdf Description: MOSFET N-CH 30V 17.5A/73A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 17.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 15 V
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BSC094N03S G BSC094N03S G Infineon Technologies BSC094N03S_G.pdf Description: MOSFET N-CH 30V 35A TDSON-8
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BSC106N025S G BSC106N025S G Infineon Technologies BSC106N025S_G.pdf Description: MOSFET N-CH 25V 13A/30A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 2.8W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC119N03S G BSC119N03S G Infineon Technologies BSC119N03S_G.pdf Description: MOSFET N-CH 30V 11.9A/30A TDSON
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 2.8W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSL211SPL6327HTSA1 BSL211SPL6327HTSA1 Infineon Technologies dgdl?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304342c787030142db9dab0e1414 Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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BSL307SPL6327HTSA1 BSL307SPL6327HTSA1 Infineon Technologies BSL307SP_Rev+2.0.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304342c787030142dca7f3721687 Description: MOSFET P-CH 30V 5.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSO052N03S BSO052N03S Infineon Technologies BSO052N03S.pdf Description: MOSFET N-CH 30V 14A 8DSO
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BSO064N03S BSO064N03S Infineon Technologies BSO064N03S.pdf Description: MOSFET N-CH 30V 12A 8DSO
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BSO072N03S BSO072N03S Infineon Technologies BSO072N03S.pdf Description: MOSFET N-CH 30V 12A 8DSO
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BSO080P03SNTMA1 BSO080P03SNTMA1 Infineon Technologies BSO080P03S.pdf Description: MOSFET P-CH 30V 12.6A 8DSO
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
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BSO094N03S BSO094N03S Infineon Technologies BSO094N03S.pdf Description: MOSFET N-CH 30V 10A 8DSO
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BSO104N03S BSO104N03S Infineon Technologies BSO104N03S.pdf Description: MOSFET N-CH 30V 10A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSO130P03SNTMA1 BSO130P03SNTMA1 Infineon Technologies BSO130P03S.pdf Description: MOSFET P-CH 30V 9.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
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BSO150N03 BSO150N03 Infineon Technologies BSO150N03.pdf Description: MOSFET 2N-CH 30V 7.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
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BSO200N03 BSO200N03 Infineon Technologies BSO200N03.pdf Description: MOSFET 2N-CH 30V 6.6A 8DSO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
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BSO200N03S BSO200N03S Infineon Technologies BSO200N03S.pdf Description: MOSFET N-CH 30V 7A 8DSO
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 10µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
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BSO200P03SNTMA1 BSO200P03SNTMA1 Infineon Technologies BSO200P03S.pdf Description: MOSFET P-CH 30V 7.4A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSO300N03S BSO300N03S Infineon Technologies BSO300N03S.pdf Description: MOSFET N-CH 30V 5.7A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 8µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSO303PNTMA1 BSO303PNTMA1 Infineon Technologies BSO303P.pdf Description: MOSFET 2P-CH 30V 8.2A 8DSO
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
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BSO350N03 BSO350N03 Infineon Technologies BSO350N03.pdf Description: MOSFET 2N-CH 30V 5A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: PG-DSO-8
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BSO604NS2XUMA1 BSO604NS2XUMA1 Infineon Technologies INFNS11930-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 55V 5A 8DSO
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 30µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 55V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSO613SPV BSO613SPV Infineon Technologies BSO613SPVG.pdf Description: MOSFET P-CH 60V 3.44A 8DSO
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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BSO613SPVGHUMA1 BSO613SPVGHUMA1 Infineon Technologies BSO613SPVG.pdf Description: MOSFET P-CH 60V 3.44A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSP50E6327HTSA1 BSP50E6327HTSA1 Infineon Technologies bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf Description: TRANS NPN DARL 45V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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BSP 51 E6327 BSP 51 E6327 Infineon Technologies bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf Description: TRANS NPN DARL 60V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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BSP 52 E6327 BSP 52 E6327 Infineon Technologies bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf Description: TRANS NPN DARL 80V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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BSP60E6327HTSA1 BSP60E6327HTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 45V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP61E6327HTSA1 BSP61E6327HTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 60V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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BSP62E6327HTSA1 BSP62E6327HTSA1 Infineon Technologies bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a Description: TRANS PNP DARL 80V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
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BFR 93AW E6327 Infineon-BFR93AW-DS-v01_01-en.pdf?fileId=db3a30431441fb5d0114acaaec8c148f
BFR 93AW E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 6GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFR 949L3 E6327 BFR949L3.pdf
BFR 949L3 E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 10V 9GHZ TSLP-3-1
Part Status: Obsolete
Supplier Device Package: PG-TSLP-3-1
Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 50mA
Power - Max: 250mW
Gain: 21.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
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BFR 949T E6327 BFR949T.pdf
BFR 949T E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 10V 9GHZ PG-SC75-3D
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-SC75-3D
Noise Figure (dB Typ @ f): 1dB ~ 2.5dB @ 1GHz
Frequency - Transition: 9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 6V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 35mA
Power - Max: 250mW
Gain: 20dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BFS17PE6327HTSA1 bfs17p.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142707fafd06b5
BFS17PE6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 15V 1.4GHZ PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
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BFS 17P E6433 bfs17p.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142707fafd06b5
BFS 17P E6433
Hersteller: Infineon Technologies
Description: RF TRANS NPN 15V 1.4GHZ PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT23
Part Status: Active
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BFS17WE6327HTSA1 bfs17w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114270c42a906bd
BFS17WE6327HTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 15V 1.4GHZ PGSOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
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BFS 481 E6327 bfs481.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef680114270d383406be&location=.en.product.findProductTypeByName.html_dgdl_bfs481.pdf
BFS 481 E6327
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BFS 483 E6327 bfs483.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef6801142710876006c5
BFS 483 E6327
Hersteller: Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Produkt ist nicht verfügbar
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BG3123RE6327HTSA1 BG3123.pdf
BG3123RE6327HTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Current - Test: 14 mA
Voltage - Test: 5 V
Voltage - Rated: 8 V
Supplier Device Package: PG-SOT363-PO
Noise Figure: 1.8dB
Technology: MOSFET (Metal Oxide)
Gain: 25dB
Configuration: 2 N-Channel (Dual)
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA, 20mA
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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BG3130E6327HTSA1 BG3130.pdf
BG3130E6327HTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Current - Test: 14 mA
Voltage - Test: 5 V
Voltage - Rated: 8 V
Part Status: Obsolete
Supplier Device Package: PG-SOT363-PO
Noise Figure: 1.3dB
Technology: MOSFET (Metal Oxide)
Gain: 24dB
Configuration: 2 N-Channel (Dual)
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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BG3130RE6327BTSA1 BG3130.pdf
BG3130RE6327BTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Current - Test: 14 mA
Voltage - Test: 5 V
Voltage - Rated: 8 V
Part Status: Obsolete
Supplier Device Package: PG-SOT363-PO
Noise Figure: 1.3dB
Technology: MOSFET (Metal Oxide)
Gain: 24dB
Configuration: 2 N-Channel (Dual)
Frequency: 800MHz
Mounting Type: Surface Mount
Current Rating (Amps): 25mA
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BGA416E6327HTSA1 BGA416.pdf
BGA416E6327HTSA1
Hersteller: Infineon Technologies
Description: IC AMP CELL 100MHZ-3GHZ SOT143-3
Test Frequency: 1.8GHz
P1dB: -3dBm
Noise Figure: 1.6dB
Current - Supply: 5.5mA
Gain: 11dB
Voltage - Supply: 2.5V ~ 5V
RF Type: Cellular, GSM, CDMA, TDMA, UMTS
Frequency: 100MHz ~ 3GHz
Mounting Type: Surface Mount
Package / Case: TO-253-4, TO-253AA
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-SOT-143-3D
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BGA420E6327BTSA1 bga420.pdf?folderId=db3a30431441fb5d0114b654e6581730&fileId=db3a304314dca3890115418cec781637
BGA420E6327BTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Produkt ist nicht verfügbar
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BGA 428 E6327 BGA428_Rev2.3.pdf
BGA 428 E6327
Hersteller: Infineon Technologies
Description: IC AMP CELL 1.4-2.5GHZ SOT363-PO
Supplier Device Package: PG-SOT363-PO
Test Frequency: 1.8GHz
P1dB: -19dBm
Noise Figure: 1.4dB
Current - Supply: 12mA
Gain: 20dB
Voltage - Supply: 2.4V ~ 3V
RF Type: Cellular, GSM, DCS, PCS
Frequency: 1.4GHz ~ 2.5GHz
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BGA615L7E6327XTSA1 BGA615L7.pdf
BGA615L7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP GPS 1.575GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.575GHz
RF Type: GPS
Voltage - Supply: 2.4V ~ 3.2V
Gain: 18dB
Current - Supply: 5.6mA
Noise Figure: 0.9dB
Supplier Device Package: PG-TSLP-7-1
Produkt ist nicht verfügbar
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BGA 619 E6327 BGA619.pdf
BGA 619 E6327
Hersteller: Infineon Technologies
Description: AMP HI IP3 PCS LOW NOISE TSLP-7
Produkt ist nicht verfügbar
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BGA 622 E6327 BGA622.pdf
BGA 622 E6327
Hersteller: Infineon Technologies
Description: IC AMP 802.15 500MHZ-6GHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 2.75V
Gain: 15dB
Current - Supply: 10mA
Noise Figure: 1dB
P1dB: -16.5dBm
Test Frequency: 1.575GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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BGA622L7E6327XTSA1 GPS%20Front-end%20components_2010.pdf?fileId=db3a30431ddc9372011e39e7f49f5e6d
BGA622L7E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP 802.15 500MHZ-6GHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: 802.15/Bluetooth, ISM, WLAN, GSM, GPS, DCS, UMTS
Voltage - Supply: 2.75V
Gain: 17.5dB
Current - Supply: 10mA
Noise Figure: 0.95dB
P1dB: -20dBm
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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BGB 540 E6327 BGB540.pdf
BGB 540 E6327
Hersteller: Infineon Technologies
Description: TRANSISTOR RF ACT BIAS SOT-343
Produkt ist nicht verfügbar
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BGF 100 E6327 BGF100.pdf
BGF 100 E6327
Hersteller: Infineon Technologies
Description: IC FILTER/ESD PROT RF S-WLP-11
Produkt ist nicht verfügbar
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BGF 104C E6327 BGF104.pdf
BGF 104C E6327
Hersteller: Infineon Technologies
Description: IC HSMMC FILTER/ESD PROT S-WLP-6
Produkt ist nicht verfügbar
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BGF110E6327XT BGF110.pdf
BGF110E6327XT
Hersteller: Infineon Technologies
Description: IC FILTER HSMMC ESD PROT WLP-24
Produkt ist nicht verfügbar
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BSA223SP BSA223SP.pdf
BSA223SP
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 390MA SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SC-75
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
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BSC022N03S BSC022N03S.pdf
BSC022N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 15 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15
Produkt ist nicht verfügbar
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BSC024N025S G BSC024N025S_Rev1.0_G.pdf
BSC024N025S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 27A/100A TDSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6530 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 90µA
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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BSC029N025S G BSC029N025S_Rev1.0.pdf
BSC029N025S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 24A/100A TDSON
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5090 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 80µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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BSC032N03S BSC032N03S.pdf
BSC032N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 23A/100A TDSON
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
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BSC037N025S G BSC037N025S_G.pdf
BSC037N025S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 21A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 2.8W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC042N03S G BSC042N03S_G.pdf
BSC042N03S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 20A/95A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 2V @ 50µA
Power Dissipation (Max): 2.8W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 95A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC048N025S G BSC048N025S_Rev1.0_G.pdf
BSC048N025S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 19A/89A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 35µA
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC052N03S G BSC052N03S_G.pdf
BSC052N03S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 80A TDSON-8
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BSC059N03S G BSC059N03S_G.pdf
BSC059N03S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 17.5A/73A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 17.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 35µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 15 V
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BSC094N03S G BSC094N03S_G.pdf
BSC094N03S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 35A TDSON-8
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BSC106N025S G BSC106N025S_G.pdf
BSC106N025S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 13A/30A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 2.8W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC119N03S G BSC119N03S_G.pdf
BSC119N03S G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11.9A/30A TDSON
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 2.8W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSL211SPL6327HTSA1 dgdl?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304342c787030142db9dab0e1414
BSL211SPL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 4.7A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 25µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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BSL307SPL6327HTSA1 BSL307SP_Rev+2.0.pdf?folderId=db3a304314dca38901154a72e3951a65&fileId=db3a304342c787030142dca7f3721687
BSL307SPL6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 5.5A TSOP-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2V @ 40µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSO052N03S BSO052N03S.pdf
BSO052N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8DSO
Produkt ist nicht verfügbar
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BSO064N03S BSO064N03S.pdf
BSO064N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A 8DSO
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BSO072N03S BSO072N03S.pdf
BSO072N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12A 8DSO
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BSO080P03SNTMA1 BSO080P03S.pdf
BSO080P03SNTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 12.6A 8DSO
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
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BSO094N03S BSO094N03S.pdf
BSO094N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10A 8DSO
Produkt ist nicht verfügbar
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BSO104N03S BSO104N03S.pdf
BSO104N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSO130P03SNTMA1 BSO130P03S.pdf
BSO130P03SNTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 9.2A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3520 pF @ 25 V
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BSO150N03 BSO150N03.pdf
BSO150N03
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 7.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 25µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Produkt ist nicht verfügbar
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BSO200N03 BSO200N03.pdf
BSO200N03
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.6A 8DSO
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 13µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W
Produkt ist nicht verfügbar
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BSO200N03S BSO200N03S.pdf
BSO200N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 7A 8DSO
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 10µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
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BSO200P03SNTMA1 BSO200P03S.pdf
BSO200P03SNTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 7.4A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BSO300N03S BSO300N03S.pdf
BSO300N03S
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 5.7A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 8µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSO303PNTMA1 BSO303P.pdf
BSO303PNTMA1
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 8.2A 8DSO
Part Status: Obsolete
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 100µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 72.5nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.2A, 10V
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1761pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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BSO350N03 BSO350N03.pdf
BSO350N03
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 5A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: PG-DSO-8
Produkt ist nicht verfügbar
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BSO604NS2XUMA1 INFNS11930-1.pdf?t.download=true&u=5oefqw
BSO604NS2XUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 55V 5A 8DSO
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 30µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 55V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSO613SPV BSO613SPVG.pdf
BSO613SPV
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 3.44A 8DSO
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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BSO613SPVGHUMA1 BSO613SPVG.pdf
BSO613SPVGHUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 3.44A 8DSO
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BSP50E6327HTSA1 bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf
BSP50E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 45V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP 51 E6327 bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf
BSP 51 E6327
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 60V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP 52 E6327 bsp50_bsp51_bsp52.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445dd10f90189&location=.en.product.findProductTypeByName.html_dgdl_bsp50_bsp51_bsp52.pdf
BSP 52 E6327
Hersteller: Infineon Technologies
Description: TRANS NPN DARL 80V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP60E6327HTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP60E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 45V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP61E6327HTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP61E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 60V 1A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP62E6327HTSA1 bsp60_bsp61_bsp62.pdf?folderId=db3a30431441fb5d011445c30f210183&fileId=db3a30431441fb5d011445e1c2e7018a
BSP62E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP DARL 80V 1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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