Modulare Elemente > IC Radiomodule
Beschreibung: Empfanger-Sender bis 1000 Meter Modul; 240-960mhz; Frequency Range: 433.92M; Sensitivity up to-121dBm; Data transfer rate :0.123-256kbps;
Strom,V: 1,8...3,6
6: RF
Bemerkung: 433 MHz
Інтерфейс: FIFO

Hersteller: Silicon Labs
Description: IC RF TXRX ISM<1GHZ 20VFQFN
Packaging: Tube
Package / Case: 20-VFQFN Exposed Pad
Sensitivity: -121dBm
Mounting Type: Surface Mount
Frequency: 900MHz ~ 960MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 13dBm (Max)
Current - Receiving: 18.5mA
Data Rate (Max): 256kbps
Current - Transmitting: 17mA ~ 30mA
Supplier Device Package: 20-QFN (4x4)
GPIO: 3
Modulation: FSK, GFSK, OOK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI
Part Status: Not For New Designs
DigiKey Programmable: Not Verified

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V

Hersteller: SILICON LABS
Description: SILICON LABS - SI4431-B1-FM - HF-Transceiver, 240MHz bis 930MHz, FSK, GFSK, OOK, 256kB/s, 13dBm Ausgang, 1.8V bis 3.6V, QFN-20
tariffCode: 85423990
rohsCompliant: YES
Übertragungsstrom: 30mA
Bauform - HF-IC: QFN
Ausgangsleistung (dBm): 13dBm
hazardous: false
rohsPhthalatesCompliant: YES
Anwendungsbereiche HF-Transceiver: Automatische Zählerablesung (AMR), drahtlose Sensornetze, Haus- und Gebäudeautomatisierung
usEccn: 5A991.b.4.b
Frequenz, min.: 240MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 1.8V
Empfangsstrom: 18.5mA
Empfindlichkeit (dBm): -101dBm
euEccn: NLR
HF/IF-Modulation: FSK, GFSK, OOK
Anzahl der Pins: 20Pin(s)
Übertragungsrate: 256Kbps
productTraceability: No
Versorgungsspannung, max.: 3.6V
Frequenz, max.: 930MHz
Betriebstemperatur, max.: 85°C

Hersteller: Silicon Labs
Description: IC RF TXRX ISM<1GHZ 20VFQFN
Packaging: Tray
Package / Case: 20-VFQFN Exposed Pad
Sensitivity: -121dBm
Mounting Type: Surface Mount
Frequency: 240MHz ~ 930MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 13dBm (Max)
Current - Receiving: 18.5mA
Data Rate (Max): 256kbps
Current - Transmitting: 17mA ~ 30mA
Supplier Device Package: 20-QFN (4x4)
GPIO: 3
Modulation: FSK, GFSK, OOK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI
Part Status: Not For New Designs
DigiKey Programmable: Not Verified

Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 0.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced

Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.7A; Idm: -30A; 0.9W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 0.9W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Hersteller: Vishay
Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 5.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 15 V

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 15 V

Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; Idm: -30A; 2.7W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.2A
Pulsed drain current: -30A
Power dissipation: 2.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced

Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.2A; Idm: -30A; 2.7W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.2A
Pulsed drain current: -30A
Power dissipation: 2.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Hersteller: Siliconix
P-MOSFET 30V 9A 2.5W 32mΩ SI4431CDY-T1-GE3 Vishay TSI4431cdy
Anzahl je Verpackung: 10 Stücke

Hersteller: VISHAY
Description: VISHAY - SI4431CDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 9 A, 0.026 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 4.2W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.026ohm
SVHC: No SVHC (10-Jun-2022)

Hersteller: VISHAY
Description: VISHAY - SI4431CDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 9 A, 0.026 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 9A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 4.2W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.026ohm
SVHC: No SVHC (10-Jun-2022)

Hersteller: Vishay
Trans MOSFET P-CH 30V 9A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET P-CH 30V 9A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET P-CH 30V 9A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET P-CH 30V 9A 8-Pin SOIC N T/R

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 15 V

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 15 V

Hersteller: ONSEMI
Description: ONSEMI - SI4431DY - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99

Hersteller: Fairchild Semiconductor
Description: P-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 15 V

Hersteller: Silicon Labs
Description: IC RF TXRX ISM<1GHZ 20VFQFN
Packaging: Tray
Package / Case: 20-VFQFN Exposed Pad
Sensitivity: -121dBm
Mounting Type: Surface Mount
Frequency: 240MHz ~ 930MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Power - Output: 20dBm (Max)
Current - Receiving: 18.5mA
Data Rate (Max): 256kbps
Current - Transmitting: 85mA
Supplier Device Package: 20-QFN (4x4)
GPIO: 3
Modulation: FSK, GFSK, OOK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: SPI
Part Status: Not For New Designs
DigiKey Programmable: Not Verified

Hersteller: SILICON LABS
Description: SILICON LABS - SI4432-B1-FMR - HF-Transceiver, ISM, 240MHz bis 930MHz, -121dBm, (G)FSK, OOM, 123B/s bis 256kB/s, QFN-20
tariffCode: 85423990
rohsCompliant: YES
Übertragungsstrom: 85mA
Bauform - HF-IC: QFN
Ausgangsleistung (dBm): 20dBm
hazardous: false
rohsPhthalatesCompliant: YES
Anwendungsbereiche HF-Transceiver: Hausautomatisierung, Fernsteuerung und -messung, RKE-Systeme (Remote Keyless Entry), Sicherheitssysteme
usEccn: 5A991.b.4.b
Frequenz, min.: 240MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 1.8V
Empfangsstrom: 18.5mA
Empfindlichkeit (dBm): -121dBm
euEccn: NLR
HF/IF-Modulation: FSK, GFSK, OOK
Anzahl der Pins: 20Pin(s)
Übertragungsrate: 256Kbps
productTraceability: No
Versorgungsspannung, max.: 3.6V
Frequenz, max.: 930MHz
Betriebstemperatur, max.: 85°C

Hersteller: SILICON LABS
Description: SILICON LABS - SI4432-B1-FMR - HF-Transceiver, ISM, 240MHz bis 930MHz, -121dBm, (G)FSK, OOM, 123B/s bis 256kB/s, QFN-20
tariffCode: 85423990
rohsCompliant: YES
Übertragungsstrom: 85mA
Bauform - HF-IC: QFN
Ausgangsleistung (dBm): 20dBm
hazardous: false
rohsPhthalatesCompliant: YES
Anwendungsbereiche HF-Transceiver: Hausautomatisierung, Fernsteuerung und -messung, RKE-Systeme (Remote Keyless Entry), Sicherheitssysteme
usEccn: 5A991.b.4.b
Frequenz, min.: 240MHz
Betriebstemperatur, min.: -40°C
Versorgungsspannung, min.: 1.8V
Empfangsstrom: 18.5mA
Empfindlichkeit (dBm): -121dBm
euEccn: NLR
HF/IF-Modulation: FSK, GFSK, OOK
Anzahl der Pins: 20Pin(s)
Übertragungsrate: 256Kbps
productTraceability: No
Versorgungsspannung, max.: 3.6V
Frequenz, max.: 930MHz
Betriebstemperatur, max.: 85°C

Hersteller: Silicon Laboratories
RF ISM Transceiver FSK/GFSK/OOK 3V Automotive 20-Pin QFN EP Tray

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.8A/4.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.9W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.8A/4.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.9W (Ta), 6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 125 V

Hersteller: Vishay
Trans MOSFET N-CH 250V 2.1A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET N-CH 250V 2.1A 8-Pin SOIC N T/R

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.1A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 2.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V

Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.5A; 5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.5A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced

Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.5A; 5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.5A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Hersteller: VISHAY
Description: VISHAY - SI4435DDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 30 V, 11.4 A, 0.0195 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 11.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0195ohm

Hersteller: VISHAY
Description: VISHAY - SI4435DDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 30 V, 11.4 A, 0.0195 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 11.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0195ohm

Hersteller: Vishay
Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 11.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 11.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V

Hersteller: Siliconix
Transistor P-Channel MOSFET; 30V; 20V; 35mOhm; 11,4A; 5W; -55°C ~ 150°C; SI4435DDY TSI4435ddy
Anzahl je Verpackung: 25 Stücke

Hersteller: Vishay
Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R

Hersteller: VISHAY
Description: VISHAY - SI4435DDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 8.1 A, 0.0195 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 8.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0195ohm

Hersteller: Vishay
Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R

Hersteller: VISHAY
Description: VISHAY - SI4435DDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 11.4 A, 0.0195 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 11.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0195ohm
SVHC: No SVHC (15-Jun-2015)

Hersteller: Vishay
Trans MOSFET P-CH 30V 8.1A 8-Pin SOIC N T/R

Hersteller: VISHAY
Description: VISHAY - SI4435DDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 8.1 A, 0.0195 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 8.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0195ohm