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AOTF2916LALPHA&OMEGATransistor N-Channel MOSFET; 100V; 20V; 62mOhm; 17A; 23,5W; -55°C ~ 175°C; AOTF2916L TAOTF2916l
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.28 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF2918LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 13A/58A TO220F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF292LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 23W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 23W
Case: TO220F
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 90nC
auf Bestellung 886 Stücke:
Lieferzeit 14-21 Tag (e)
20+4.28 EUR
23+3.84 EUR
100+3.4 EUR
250+3.06 EUR
500+2.92 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF292LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 70A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF296LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 10A/41A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 36.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF296LAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220F Tube
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.96 EUR
2000+1.88 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF296LAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220F Tube
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.76 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF296LAlpha & Omega SemiconductorTrans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220F Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF298LAOSMOSFET N-CH 100V 33A TO220F Транзистори
Produkt ist nicht verfügbar
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AOTF298LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 9A/33A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF29S50LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 29A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V
Power Dissipation (Max): 37.9W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF2N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 2A TO220-3F
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF2N60AOTO-220
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOTF2N60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 2A TO220-3F
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF360A70LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 12A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 29.5W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 12399 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.38 EUR
50+2.17 EUR
100+1.94 EUR
500+1.62 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF360A70LAlpha & Omega SemiconductorN Channel Power Transistor
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF380A60CLAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Tube
auf Bestellung 35720 Stücke:
Lieferzeit 14-21 Tag (e)
164+1.06 EUR
182+0.93 EUR
186+0.87 EUR
500+0.8 EUR
1000+0.75 EUR
2000+0.7 EUR
Mindestbestellmenge: 164 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF380A60CLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tj)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
auf Bestellung 3017 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.36 EUR
50+2.13 EUR
100+1.92 EUR
500+1.54 EUR
1000+1.42 EUR
2000+1.31 EUR
Mindestbestellmenge: 5 Stücke
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AOTF380A60CLAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220F Tube
auf Bestellung 35720 Stücke:
Lieferzeit 14-21 Tag (e)
163+1.07 EUR
181+0.95 EUR
185+0.9 EUR
500+0.84 EUR
1000+0.81 EUR
2000+0.79 EUR
Mindestbestellmenge: 163 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF380A60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 11A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.72 EUR
50+3.45 EUR
100+3.13 EUR
500+2.9 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF3N100Alpha & Omega SemiconductorTrans MOSFET N-CH 1KV 2.8A 3-Pin(3+Tab) TO-220F Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF3N100Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 1000V 2.8A TO220F
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOTF3N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 3A TO220-3F
Produkt ist nicht verfügbar
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AOTF3N80Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 800V 2.8A TO220-3F
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOTF3N80Alpha & Omega SemiconductorTrans MOSFET N-CH 800V 2.8A 3-Pin(3+Tab) TO-220F
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF3N90Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 900V 2.4A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 6.7Ohm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF404Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 105V 5.8/26A TO220FL
Input Capacitance (Ciss) (Max) @ Vds: 2445 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 105 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-220FL
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF409Alpha & Omega SemiconductorTrans MOSFET P-CH 60V 24A 3-Pin(3+Tab) TO-220F T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF409Alpha & Omega SemiconductorTrans MOSFET P-CH 60V 24A 3-Pin(3+Tab) TO-220F T/R
auf Bestellung 5638 Stücke:
Lieferzeit 14-21 Tag (e)
148+1.18 EUR
156+1.07 EUR
161+1.01 EUR
165+0.94 EUR
170+0.88 EUR
1000+0.82 EUR
Mindestbestellmenge: 148 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF409Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 60V 5.4A/24A TO220FL
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 2.16W (Ta), 43W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 24A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220FL
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOTF409Alpha & Omega SemiconductorTrans MOSFET P-CH 60V 24A 3-Pin(3+Tab) TO-220F T/R
auf Bestellung 5638 Stücke:
Lieferzeit 14-21 Tag (e)
156+1.12 EUR
161+1.07 EUR
165+1.02 EUR
169+0.98 EUR
1000+0.93 EUR
Mindestbestellmenge: 156 Stücke
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AOTF4126Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 6A/27A TO220-3F
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF4126ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 19A; 21W; TO220F
Mounting: THT
Power dissipation: 21W
Gate charge: 9nC
Polarisation: unipolar
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±25V
Case: TO220F
On-state resistance: 24mΩ
auf Bestellung 688 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.46 EUR
65+1.31 EUR
73+1.18 EUR
100+1.11 EUR
Mindestbestellmenge: 59 Stücke
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AOTF4185Alpha & Omega SemiconductorTrans MOSFET P-CH 40V 34A 3-Pin(3+Tab) TO-220F Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF4185AD - Analog DevicesTransistor P-Channel MOSFET; 40V; 20V; 23mOhm; 34A; 33W; -55°C ~ 175°C; AOTF4185 TAOTF4185
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.27 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF4185Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 40V 34A TO220FL
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220FL
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 424 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.53 EUR
13+1.7 EUR
100+1.19 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOTF42S60Alpha & Omega Semiconductor Inc.Description: MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 50W
Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AOTF42S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 39A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V
Power Dissipation (Max): 37.9W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.93 EUR
50+8.08 EUR
100+7.43 EUR
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AOTF42S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 39A 3-Pin(3+Tab) TO-220F T/R
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AOTF450LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 200V 5.8A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF454LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 150V 3A/13A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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AOTF472Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 75V 10A/53A TO220FL
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FL
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 57.5W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
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AOTF474
Produktcode: 171398
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Transistoren > MOSFET N-CH
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AOTF474Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 75V 9A/47A TO220FL
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FL
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.9W (Ta), 57.5W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF4N60ALPHA&OMEGATransistor N-Channel MOSFET; 600V; 30V; 2,2Ohm; 4A; 35W; -55°C ~ 150°C; AOTF4N60 TAOTF4n60
Anzahl je Verpackung: 25 Stücke
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25+1.81 EUR
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AOTF4N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
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AOTF4N60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220F
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AOTF4N60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 15nC
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AOTF4N60AOSMOSFET N-CH 600V 2.5A TO-220F Транзистори
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AOTF4N60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 600V 4A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
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100+1.32 EUR
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AOTF4N60_002Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH TO220
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Part Status: Obsolete
Produkt ist nicht verfügbar
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AOTF4N60_DELTAAlpha & Omega Semiconductor Inc.Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 25 V
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AOTF4N90AOSMOSFET N-CH 900V 2.5A TO-220F Транзистори
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AOTF4N90Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 900V 4A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
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AOTF4N90Alpha & Omega SemiconductorTrans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220F Tube
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AOTF4N90ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.5A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.5A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 3.6Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 18.4nC
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AOTF4S60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 263 pF @ 100 V
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AOTF4S60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220F T/R
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AOTF4S60
Produktcode: 121946
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Transistoren > MOSFET N-CH
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AOTF4S60AOSMOSFET N-CH 600V 3.7A TO-220F Транзистори
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AOTF4T60PAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 4A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 522 pF @ 100 V
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AOTF5B60DAlpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 10A 31.2W 3-Pin(3+Tab) TO-220F
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AOTF5B60DAlpha & Omega Semiconductor Inc.Description: IGBT 600V 14A TO-220F
Power - Max: 31.2 W
Current - Collector Pulsed (Icm): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Gate Charge: 9.4 nC
Test Condition: 400V, 5A, 60Ohm, 15V
Switching Energy: 140µJ (on), 40µJ (off)
Td (on/off) @ 25°C: 12ns/83ns
Supplier Device Package: TO-220F
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A
Reverse Recovery Time (trr): 98 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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AOTF5B65M1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 5A TO220
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 25 W
Current - Collector Pulsed (Icm): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 10 A
Part Status: Active
Gate Charge: 14 nC
Test Condition: 400V, 5A, 60Ohm, 15V
Switching Energy: 80µJ (on), 70µJ (off)
Td (on/off) @ 25°C: 8.5ns/106ns
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Reverse Recovery Time (trr): 195 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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11+2.08 EUR
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500+1.19 EUR
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AOTF5B65M2Alpha & Omega Semiconductor Inc.Description: IGBT 5A
Supplier Device Package: TO-220F
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tape & Reel (TR)
Power - Max: 25 W
Current - Collector Pulsed (Icm): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 10 A
Gate Charge: 14 nC
Test Condition: 400V, 5A, 60Ohm, 15V
Switching Energy: 80µJ (on), 70µJ (off)
Td (on/off) @ 25°C: 8.5ns/106ns
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AOTF5N100Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 1000V 4A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 25 V
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AOTF5N50ALPHA&OMEGATransistor N-Channel MOSFET; 500V; 30V; 1,5Ohm; 5A; 35W; -55°C ~ 150°C; AOTF5N50 TAOTF5n50
Anzahl je Verpackung: 25 Stücke
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Lieferzeit 7-14 Tag (e)
25+1.74 EUR
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AOTF5N50ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.3A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.3A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 15.5nC
Kind of channel: enhancement
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AOTF5N50Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 5A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF5N50FDAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 5A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF5N50FD_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH TO220
Part Status: Obsolete
FET Type: N-Channel
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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AOTF5N50LAlpha & Omega Semiconductor Inc.Description: MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 35W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF600A60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 27.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V
Produkt ist nicht verfügbar
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AOTF600A60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220F Tube
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AOTF600A70FLAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 8.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Produkt ist nicht verfügbar
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AOTF600A70LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 8.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.81 EUR
50+1.84 EUR
100+1.65 EUR
500+1.32 EUR
Mindestbestellmenge: 6 Stücke
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AOTF66613LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 44.5A/90A TO220F
auf Bestellung 999 Stücke:
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AOTF66616LAlpha & Omega Semiconductor60V N-Channel MOSFET
Produkt ist nicht verfügbar
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AOTF66616LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 38A/72.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 72.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V
auf Bestellung 1501 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.06 EUR
50+3.55 EUR
100+3.21 EUR
500+2.62 EUR
1000+2.43 EUR
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AOTF66919LAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V
Produkt ist nicht verfügbar
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AOTF66920LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 22.5/41A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 41A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V
Power Dissipation (Max): 8.3W (Ta), 27.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Produkt ist nicht verfügbar
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AOTF6N90ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.9A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.9A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Gate charge: 29nC
Kind of channel: enhancement
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.65 EUR
59+1.46 EUR
66+1.3 EUR
100+1.19 EUR
500+1.11 EUR
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AOTF6N90Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 900V 6A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 3A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF6N90Alpha & Omega SemiconductorTrans MOSFET N-CH 900V 6A 3-Pin(3+Tab) TO-220F Tube
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AOTF780A70LAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 780mOhm @ 1.4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V
Produkt ist nicht verfügbar
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AOTF7N60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 7A TO220-3F
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 38.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF7N60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220F
Produkt ist nicht verfügbar
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AOTF7N60FD
Produktcode: 166194
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Verschiedene Bauteile > Other components 3
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AOTF7N60FDALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.45Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 20nC
Produkt ist nicht verfügbar
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AOTF7N60FDAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 7A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 3.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOTF7N60FD_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF7N60_002Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH TO220
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Packaging: Tube
Produkt ist nicht verfügbar
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AOTF7N65Alpha & Omega SemiconductorTrans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220F
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
160+1.09 EUR
168+1.02 EUR
250+0.96 EUR
500+0.9 EUR
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AOTF7N65ALPHA&OMEGATransistor N-Channel MOSFET; 650V; 30V; 1,56Ohm; 7A; 38,5W; -55°C ~ 150°C; AOTF7N65 TAOTF7n65
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.51 EUR
Mindestbestellmenge: 20 Stücke
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AOTF7N65Alpha & Omega SemiconductorTrans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220F
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
70+2.51 EUR
75+2.25 EUR
80+2.03 EUR
84+1.86 EUR
100+1.67 EUR
500+1.5 EUR
Mindestbestellmenge: 70 Stücke
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AOTF7N65Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 7A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Produkt ist nicht verfügbar
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AOTF7N65
Produktcode: 153855
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A&OTransistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 650 В
Drain-Strom Idd, A: 7 A
Durchlasswiderstand Rds(on), Ohm: 1,56 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 887/19
Montage: THT
auf Bestellung: 35 St.
  • 35 St. - Lieferzeit 21-28 Tag (e)
1+1.57 EUR
10+1.4 EUR
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AOTF7N70Alpha & Omega SemiconductorTrans MOSFET N-CH 700V 7A 3-Pin(3+Tab) TO-220F
Produkt ist nicht verfügbar
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AOTF7N70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 7A TO220-3F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 3.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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AOTF7N70
Produktcode: 145037
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Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
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