Produkte > CSD
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| CSD17576Q5B | Texas Instruments | MOSFETs 30V N-channel NexFE T Pwr MOSFET A 595-CSD17576Q5BT | auf Bestellung 2146 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17576Q5B | Texas Instruments | Description: MOSFET N-CH 30V 100A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17576Q5B | Texas Instruments | MOSFET N-CH 30V 100A 8VSON Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17576Q5B | Texas Instruments | Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17576Q5B | Texas Instruments | Description: MOSFET N-CH 30V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V | auf Bestellung 3755 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17576Q5B | Texas Instruments | Transistor N-Channel MOSFET; 30V; 20V; 2,9mOhm; 184A; 125W; -55°C ~ 150°C; CSD17576Q5BT CSD17576Q5B TCSD17576q5b Anzahl je Verpackung: 10 Stücke | auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| CSD17576Q5BT | Texas Instruments | Description: MOSFET N-CH 30V 100A 8VSON Vgs(th) (Max) @ Id: 1.8V @ 250µA Packaging: Cut Tape (CT) Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) | auf Bestellung 10477 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17576Q5BT | Texas Instruments | MOSFET N-CH 30V 100A 8VSON Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17576Q5BT | TEXAS INSTRUMENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; VSON-CLIP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 125W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm | auf Bestellung 376 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17576Q5BT | Texas Instruments | Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17576Q5BT | Texas Instruments | Description: MOSFET N-CH 30V 100A 8VSON Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 3.1W (Ta), 125W (Tc) | auf Bestellung 10250 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17576Q5BT | Texas Instruments | Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17576Q5BT | Texas Instruments | MOSFETs 30V, N-channel NexFET Pwr MOSFET | auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17576Q5BT | Texas Instruments | Trans MOSFET N-CH Si 30V 100A 8-Pin VSON-CLIP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17577Q3A | Texas Instruments | Trans MOSFET N-CH 30V 35A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17577Q3A | Texas Instruments | Description: MOSFET N-CH 30V 35A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-VSONP (3x3.3) Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 2.8W (Ta), 53W (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | auf Bestellung 10021 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17577Q3A | Texas Instruments | MOSFETs 30V N-channel NexFE T Pwr MOSFET A 595-C A 595-CSD17577Q3AT | auf Bestellung 15734 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17577Q3A | Texas Instruments | Trans MOSFET N-CH 30V 35A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17577Q3A | Texas Instruments | Description: MOSFET N-CH 30V 35A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Power Dissipation (Max): 2.8W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17577Q3A Produktcode: 178585
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| CSD17577Q3A | Texas Instruments | MOSFET N-CH 30V 35A VSON-8 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17577Q3AT | Texas Instruments | MOSFET N-CH 30V 35A VSON-8 Транзистори | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17577Q3AT | Texas Instruments | Trans MOSFET N-CH 30V 35A 8-Pin VSONP EP T/R | auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17577Q3AT | Texas Instruments | Description: MOSFET N-CH 30V 35A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Power Dissipation (Max): 2.8W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V | auf Bestellung 1910 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17577Q3AT | Texas Instruments | Trans MOSFET N-CH 30V 35A 8-Pin VSONP EP T/R | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17577Q3AT | TEXAS INSTRUMENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 53W; VSONP8; 3.3x3.3mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 53W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 3.3x3.3mm | auf Bestellung 124 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17577Q3AT | Texas Instruments | Trans MOSFET N-CH 30V 35A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17577Q3AT | Texas Instruments | Description: MOSFET N-CH 30V 35A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Power Dissipation (Max): 2.8W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V | auf Bestellung 1750 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17577Q3AT | Texas Instruments | Trans MOSFET N-CH 30V 35A 8-Pin VSONP EP T/R | auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17577Q3AT | Texas Instruments | MOSFETs 30V NCH NexFET MOSFE T A 595-CSD17577Q3A A 595-CSD17577Q3A | auf Bestellung 866 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17577Q5A | Texas Instruments | Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17577Q5A | Texas Instruments | Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17577Q5A | Texas Instruments | Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R | auf Bestellung 100000 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17577Q5A | TEXAS INSTRUMENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 53W; VSONP8 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Power dissipation: 53W Case: VSONP8 Mounting: SMD Kind of channel: enhancement Gate charge: 27nC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17577Q5A | Texas Instruments | Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R | auf Bestellung 80000 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17577Q5A | Texas Instruments | MOSFETs 30V N-channel NexFE T Pwr MOSFET A 595-C A 595-CSD17577Q5AT | auf Bestellung 2275 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17577Q5A | Texas Instruments | Description: MOSFET N-CH 30V 60A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V | auf Bestellung 9902 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17577Q5A | Texas Instruments | Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17577Q5A | Texas Instruments | Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17577Q5A | Texas Instruments | Description: MOSFET N-CH 30V 60A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17577Q5AT | Texas Instruments | MOSFETs 30V NCH NexFET A 595 -CSD17577Q5A A 595- A 595-CSD17577Q5A | auf Bestellung 5349 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17577Q5AT | Texas Instruments | Description: MOSFET N-CH 30V 60A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17577Q5AT | Texas Instruments | Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17577Q5AT | Texas Instruments | Trans MOSFET N-CH Si 30V 60A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17577Q5AT | Texas Instruments | Description: MOSFET N-CH 30V 60A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V Power Dissipation (Max): 3W (Ta), 53W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 15 V | auf Bestellung 2759 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17578Q3A | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17578Q3A | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17578Q3A | Texas Instruments | Description: MOSFET N-CH 30V 20A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17578Q3A | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17578Q3A | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17578Q3A | Texas Instruments | MOSFETs CSD17578Q3A 30 V 8-V SONP A 595-CSD17578 A 595-CSD17578Q3AT | auf Bestellung 2029 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17578Q3A | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17578Q3A | Texas Instruments | Description: MOSFET N-CH 30V 20A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V | auf Bestellung 3488 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17578Q3AT | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17578Q3AT | Texas Instruments | Description: MOSFET N-CH 30V 20A 8VSON Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (3x3.3) Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 3.2W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V | auf Bestellung 4162 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17578Q3AT | Texas Instruments | MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17578Q3A | auf Bestellung 778 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17578Q3AT | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17578Q3AT | Texas Instruments | Description: MOSFET N-CH 30V 20A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (3x3.3) Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 3.2W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | auf Bestellung 3750 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17578Q3AT | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17578Q3AT | TEXAS INSTRUMENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; 37W; VSONP8; 3.3x3.3mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 37W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 8.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 7.9nC Dimensions: 3.3x3.3mm | auf Bestellung 348 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17578Q5A | Texas Instruments | Trans MOSFET N-CH Si 30V 25A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17578Q5A | Texas Instruments | Description: MOSFET N-CH 30V 25A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V | auf Bestellung 991 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17578Q5A | Texas Instruments | Trans MOSFET N-CH Si 30V 25A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17578Q5A | Texas Instruments | Description: MOSFET N-CH 30V 25A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 10A, 10V Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17578Q5A | Texas Instruments | MOSFETs 30-V N channel NexF ET power MOSFET sin A 595-CSD17578Q5AT | auf Bestellung 2263 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17578Q5AT | Texas Instruments | Trans MOSFET N-CH Si 30V 25A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17578Q5AT | Texas Instruments | Description: MOSFET N-CH 30V 25A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | auf Bestellung 1488 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17578Q5AT | Texas Instruments | MOSFETs 30V N-Channel NexFET Power MOSFET A 595- A 595-CSD17578Q5A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17578Q5AT | Texas Instruments | Trans MOSFET N-CH Si 30V 25A 8-Pin VSONP EP T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17578Q5AT | Texas Instruments | Description: MOSFET N-CH 30V 25A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 3.1W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17578Q5AT | Texas Instruments | Trans MOSFET N-CH Si 30V 25A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q3A | Texas Instruments | Description: MOSFET N-CH 30V 20A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V Power Dissipation (Max): 3.2W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSONP (3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q3A | Texas Instruments | MOSFETs CSD17579Q3A 30 V 8-V SONP A 595-CSD17579 A 595-CSD17579Q3AT | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q3A | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | auf Bestellung 57500 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17579Q3A | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q3A | TEXAS INSTRUMENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q3A | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17579Q3A | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | auf Bestellung 1189 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17579Q3A | Texas Instruments | Description: MOSFET N-CH 30V 20A 8VSON Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 3.2W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (3x3.3) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q3A | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | auf Bestellung 1189 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17579Q3A | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q3AT | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q3AT | Texas Instruments | Description: MOSFET N-CH 30V 20A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (3x3.3) Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 3.2W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17579Q3AT | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q3AT | Texas Instruments | MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17579Q3A | auf Bestellung 475 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17579Q3AT | Texas Instruments | Trans MOSFET N-CH Si 30V 20A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q3AT | Texas Instruments | Description: MOSFET N-CH 30V 20A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (3x3.3) Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 3.2W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17579Q3AT | Texas Instruments | MOSFET N-CH 30V 35A 8VSON Транзистори | auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17579Q5A | Texas Instruments | Description: MOSFET N-CH 30V 25A 8VSON Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V | auf Bestellung 1772 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17579Q5A | Texas Instruments | Trans MOSFET N-CH Si 30V 25A 8-Pin VSONP EP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17579Q5A | Texas Instruments | MOSFETs 30-V N channel NexF ET power MOSFET sin A 595-CSD17579Q5AT | auf Bestellung 4294 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17579Q5A | Texas Instruments | Description: MOSFET N-CH 30V 25A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q5A | Texas Instruments | MOSFET 30-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 13.3 mOhm 8-VSONP Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q5A | Texas Instruments | Trans MOSFET N-CH Si 30V 25A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q5A | Texas Instruments | Trans MOSFET N-CH Si 30V 25A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q5AT | TEXAS INSTRUMENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25A; 36W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 25A Power dissipation: 36W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 5.4nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm | auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD17579Q5AT | Texas Instruments | Description: MOSFET N-CH 30V 25A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | auf Bestellung 1603 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17579Q5AT | Texas Instruments | Trans MOSFET N-CH Si 30V 25A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CSD17579Q5AT | Texas Instruments | Description: MOSFET N-CH 30V 25A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD17579Q5AT | Texas Instruments | Trans MOSFET N-CH Si 30V 25A 8-Pin VSONP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH |