Produkte > IPP
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| IPP114N03LGHKSA1 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 30A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V | auf Bestellung 12496 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP114N12N3 G | Infineon Technologies | MOSFETs N-Ch 120V 75A TO220-3 OptiMOS 3 | auf Bestellung 439 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP114N12N3G | Infineon Technologies | Description: IPP114N12 - 12V-300V N-CHANNEL P | auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 331 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP114N12N3GXKSA1 | Infineon Technologies | Trans MOSFET N-CH 120V 75A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP114N12N3GXKSA1 | Infineon Technologies | Trans MOSFET N-CH 120V 75A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP114N12N3GXKSA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 136W; PG-TO220-3 Mounting: THT Power dissipation: 136W Polarisation: unipolar Technology: OptiMOS™ 3 Drain current: 75A Kind of channel: enhancement Drain-source voltage: 120V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: PG-TO220-3 On-state resistance: 11.4mΩ | auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP114N12N3GXKSA1 | Infineon Technologies | Description: MOSFET N-CH 120V 75A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 75A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 83µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4310 pF @ 60 V | auf Bestellung 406 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP114N12N3GXKSA1 | Infineon Technologies | Trans MOSFET N-CH 120V 75A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP114N12N3GXKSA1 | Infineon Technologies | Trans MOSFET N-CH 120V 75A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP114N12N3GXKSA1 | INFINEON | Description: INFINEON - IPP114N12N3GXKSA1 - Leistungs-MOSFET, n-Kanal, 120 V, 75 A, 9800 µohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 120V rohsCompliant: YES Dauer-Drainstrom Id: 75A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 136W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS 3 productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 9800µohm | auf Bestellung 397 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP114N12N3GXKSA1 | Infineon Technologies | Trans MOSFET N-CH 120V 75A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP11N03LA | Infineon Technologies | Description: MOSFET N-CH 25V 30A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 1358 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 2V @ 20µA Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N04S3-02 | Infineon Technologies | MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N04S3-02 | Infineon Technologies | Description: PFET, 120A I(D), 40V, 0.0023OHM, Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 230µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk | auf Bestellung 30607 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N04S302AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 230µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14300 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N04S302AKSA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPP120N04S302AKSA1 - IPP120N04 - 20V-40V N-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 30607 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N04S4-01 | Infineon Technologies | MOSFET N-Ch 40V 120A TO220-3 OptiMOS-T2 | auf Bestellung 540 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N04S4-02 | Infineon Technologies | MOSFETs N-Ch 40V 120A TO220-3 OptiMOS-T2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N04S401AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 120A TO220-3-1 Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 140µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N04S402AKSA1 | Infineon Technologies | MOSFETs N-Ch 40V 120A TO220-3 OptiMOS-T2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N04S402AKSA1 | Infineon Technologies | Description: MOSFET N-CH 40V 120A TO220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10740 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-1 Vgs(th) (Max) @ Id: 4V @ 110µA Power Dissipation (Max): 158W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Qualification: AEC-Q101 Grade: Automotive Mounting Type: Through Hole Package / Case: TO-220-3 | auf Bestellung 283 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N06N Produktcode: 166668
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IPP120N06N G | Infineon Technologies | MOSFET N-Ch 60V 75A TO220-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N06NGAKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 75A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 94µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N06S4-03 | Infineon Technologies | MOSFET N-Ch 60V 120A TO220-3 OptiMOS-T2 | auf Bestellung 342 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N06S4-H1 | Infineon Technologies | MOSFET N-Ch 60V 120A TO220-3 OptiMOS-T2 | auf Bestellung 63 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N06S402AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 22700 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N06S402AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N06S402AKSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 12852 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N06S402AKSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 140µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N06S403AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N06S403AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 22000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N06S403AKSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13150 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N06S4H1AKSA1 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N06S4H1AKSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: PG-TO220-3-1 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 38480 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N06S4H1AKSA2 | Infineon Technologies | Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N06S4H1AKSA2 | Infineon Technologies | MOSFET MOSFET | auf Bestellung 173 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N08S403AKSA1 | INFINEON | Description: INFINEON - IPP120N08S403AKSA1 - Leistungs-MOSFET, n-Kanal, 80 V, 120 A, 2400 µohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 278W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS T2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 2400µohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 358 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N08S403AKSA1 | Infineon Technologies | MOSFETs N-CHANNEL 75/80V | auf Bestellung 1268 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N08S403AKSA1 | Infineon Technologies | Description: MOSFET N-CH 80V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 223µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 8083 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N08S404AKSA1 | Infineon Technologies | Description: MOSFET N-CH 80V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N08S404AKSA1 | Infineon Technologies | Trans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 6500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N08S404AKSA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPP120N08S404AKSA1 - XPP120N08 MOSFET N-CHANNEL SINGLE 80V 1 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N08S404AKSA1 | Infineon Technologies | Description: MOSFET N-CH 80V 120A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 120µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6450 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 16972 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N08S404AKSA1 | Infineon Technologies | Trans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N08S404AKSA1 | Infineon Technologies | MOSFET N-CHANNEL 75/80V | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N10S4-05 | Infineon Technologies | MOSFET MOSFET_(75V 120V( | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N10S403AKSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | auf Bestellung 7268 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N10S403AKSA1 | Infineon Technologies | MOSFETs N-CHANNEL 100+ | auf Bestellung 508 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N10S403AKSA1 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - IPP120N10S403AKSA1 - IPP120N10 75V-100V N-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 20700 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N10S403AKSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 180µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N10S403AKSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N10S403AKSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | auf Bestellung 13700 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N10S405AKSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 100A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 120µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 7000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N10S405AKSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N10S405AKSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | auf Bestellung 3691 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N10S405AKSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | auf Bestellung 21835 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N10S405AKSA1 | Infineon Technologies | MOSFET N-CHANNEL 100+ | auf Bestellung 6396 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N10S405AKSA1 | INFINEON | Description: INFINEON - IPP120N10S405AKSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 4500 µohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 190W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS-T2 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 4500µohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 6691 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N10S405AKSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | auf Bestellung 30334 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N20NFD | Infineon Technologies | MOSFETs N-Ch 200V 84A TO220-3 | auf Bestellung 821 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N20NFDAKSA1 | INFINEON TECHNOLOGIES | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 84A Power dissipation: 300W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: OptiMOS™ FD | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N20NFDAKSA1 | Infineon Technologies | Trans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 5454 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N20NFDAKSA1 | Infineon Technologies | Trans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120N20NFDAKSA1 | Infineon | Trans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube IPP120N20NFDAKSA1 IPP120N20NFDA TIPP120n20nfda Anzahl je Verpackung: 5 Stücke | auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| IPP120N20NFDAKSA1 | INFINEON | Description: INFINEON - IPP120N20NFDAKSA1 - Leistungs-MOSFET, n-Kanal, 200 V, 84 A, 0.0106 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 84A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0106ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 998 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N20NFDAKSA1 | Infineon Technologies | Trans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 1122 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N20NFDAKSA1 | Infineon Technologies | Description: MOSFET N-CH 200V 84A TO220-3 Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 4V @ 270µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 84A, 10V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6650 pF @ 100 V | auf Bestellung 53 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120N20NFDAKSA1 | Infineon Technologies | Trans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 1122 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N20NFDAKSA1 | Infineon Technologies | Trans MOSFET N-CH 200V 84A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 196 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120N20NFDAKSA1 | Infineon Technologies | MOSFETs N-Ch 200V 84A TO220-3 | auf Bestellung 1012 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120P04P4-04 | Infineon Technologies | MOSFET P-Ch -40V -120A TO220-3 OptiMOS-P2 | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120P04P404AKSA1 | Infineon Technologies | Description: MOSFET P-CH 40V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 340µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120P04P4L-03 | Infineon Technologies | MOSFETs P-Ch -40V -120A TO22 0-3 OptiMOS-P2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120P04P4L03AKSA1 | INFINEON | Description: INFINEON - IPP120P04P4L03AKSA1 - Leistungs-MOSFET, p-Kanal, 40 V, 120 A, 0.0029 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 120 hazardous: false Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Verlustleistung Pd: 136 Gate-Source-Schwellenspannung, max.: 1.7 euEccn: NLR Verlustleistung: 136 Bauform - Transistor: TO-220 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: OptiMOS P2 Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.0029 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0029 SVHC: No SVHC (08-Jul-2021) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120P04P4L03AKSA1 | Infineon Technologies | Trans MOSFET P-CH 40V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120P04P4L03AKSA1 | Infineon Technologies | Trans MOSFET P-CH 40V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120P04P4L03AKSA1 | Infineon Technologies | MOSFET The factory is currently not accepting orders for this product. | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120P04P4L03AKSA1 | Infineon Technologies | Description: MOSFET P-CH 40V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 340µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120P04P4L03AKSA2 | Infineon Technologies | Trans MOSFET P-CH 40V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | auf Bestellung 8313 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120P04P4L03AKSA2 | Infineon Technologies | Trans MOSFET P-CH 40V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120P04P4L03AKSA2 | Infineon Technologies | Trans MOSFET P-CH 40V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | auf Bestellung 8313 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120P04P4L03AKSA2 | Infineon Technologies | MOSFETs MOSFET_(20V 40V) | auf Bestellung 2036 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP120P04P4L03AKSA2 | Infineon Technologies | Description: MOSFET P-CH 40V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 340µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +5V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V Qualification: AEC-Q100 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120P04P4L03AKSA2 | Infineon Technologies | Trans MOSFET P-CH 40V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120P04P4L03AKSA2 | Infineon Technologies | Trans MOSFET P-CH 40V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120P04P4L03AKSA2 | INFINEON | Description: INFINEON - IPP120P04P4L03AKSA2 - Leistungs-MOSFET, p-Kanal, 40 V, 120 A, 0.0029 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS-P2 productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0029ohm SVHC: No SVHC (21-Jan-2025) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120P04P4L03AKSA2 | Infineon Technologies | Trans MOSFET P-CH 40V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | auf Bestellung 257 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120P04P4L03AKSA2 | Infineon Technologies | Trans MOSFET P-CH 40V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP120P04P4L03AKSA2 | Infineon Technologies | Trans MOSFET P-CH 40V 120A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP120P04P4L03AKSA2 Produktcode: 203742
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| Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IPP126N10N3 G | Infineon Technologies | MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3 | auf Bestellung 219 Stücke: Lieferzeit 311-315 Tag (e) |
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| IPP126N10N3GXKSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 58A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Last Time Buy Supplier Device Package: PG-TO220-3 Vgs(th) (Max) @ Id: 3.5V @ 46µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| IPP126N10N3GXKSA1 | Infineon Technologies | MOSFET N-Ch 100V 58A TO220-3 OptiMOS 3 | auf Bestellung 499 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP129N10NF2SAKMA1 | Infineon Technologies | MOSFETs IFX FET >80 - 100V | auf Bestellung 921 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP129N10NF2SAKMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 525000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP129N10NF2SAKMA1 | INFINEON | Description: INFINEON - IPP129N10NF2SAKMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 52 A, 0.0116 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-220 Anzahl der Pins: 3Pin(s) Produktpalette: StrongIRFET 2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0116ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 886 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP129N10NF2SAKMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPP129N10NF2SAKMA1 | Infineon Technologies | Description: TRENCH >=100V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 52A (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 30A, 10V Power Dissipation (Max): 3.8W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 30µA Supplier Device Package: PG-TO220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V | auf Bestellung 961 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPP129N10NF2SAKMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 1130 Stücke: Lieferzeit 14-21 Tag (e) |
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