Produkte > tsm
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| TSM036N03PQ56 | Taiwan Semiconductor | MOSFET Power MOSFET, N-CHAN 30V, 95A, 3.6mOhm | auf Bestellung 2595 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM036N03PQ56 RLG | Taiwan Semiconductor | MOSFETs 30V, 124A, Single N-Channel Power MOSFET | auf Bestellung 1666 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM036N03PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 124A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V | auf Bestellung 140 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM036N03PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 124A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 22A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM038N03PQ33 | Taiwan Semiconductor Corporation | Description: 30V, 78A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Power Dissipation (Max): 2.4W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM038N03PQ33 | Taiwan Semiconductor | MOSFET Power MOSFET, N-CHAN 30V, 80A, 3.8mOhm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM038N03PQ33 RGG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 78A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V | auf Bestellung 10891 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM038N03PQ33 RGG | Taiwan Semiconductor | MOSFETs 30V, 78A, Single N-Channel Power MOSFET | auf Bestellung 3994 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM038N03PQ33 RGG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 78A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 15 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM038N04LCP ROG | Taiwan Semiconductor | MOSFETs 40V, 135A, Single N-Channel Power MOSFET | auf Bestellung 1307 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM038N04LCP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 40V 135A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V | auf Bestellung 417 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM038N04LCP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 40V 135A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 19A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5509 pF @ 20 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM040N03CP | Taiwan Semiconductor Corporation | Description: 30V, 90A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM040N03CP | Taiwan Semiconductor | MOSFETs 30V, 90A, Single, N-Channel Low Voltage MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM040N03CP ROG | Taiwan Semiconductor | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM040N03CP ROG | Taiwan Semiconductor | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM040N03CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 30V 90A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V | auf Bestellung 4690 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM040N03CP ROG | Taiwan Semiconductor | MOSFETs 30V, 90A, Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM040N03CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 30V 90A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 10V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM040N03CP ROG | Taiwan Semiconductor | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM042N03CS | Taiwan Semiconductor Corporation | Description: 30V, 30A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM042N03CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 30V 30A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V | auf Bestellung 14177 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM042N03CS RLG | TAIWAN SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8 On-state resistance: 6mΩ Mounting: SMD Power dissipation: 7W Gate charge: 24nC Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tape Case: SOP8 | auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM042N03CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 30V 30A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 12A, 10V Power Dissipation (Max): 7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM042N03CS RLG | Taiwan Semiconductor | MOSFETs 30V, 30A, Single N-Channel Power MOSFET | auf Bestellung 8158 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM043NB04CZ | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 16A/124A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 124A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 16A, 10V Power Dissipation (Max): 2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4928 pF @ 20 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM043NB04CZ C0G | Taiwan Semiconductor | MOSFETs 40V, 124A, Single N-Channel Power MOSFET | auf Bestellung 3930 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM043NB04CZ C0G | TAIWAN SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB On-state resistance: 43.5mΩ Mounting: THT Power dissipation: 125W Gate charge: 74nC Polarisation: unipolar Drain current: 124A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM043NB04LCZ C0G | Taiwan Semiconductor Corporation | Description: 40V, 124A, SINGLE N-CHANNEL POWE Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 124A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 16A, 10V Power Dissipation (Max): 2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4387 pF @ 20 V | auf Bestellung 3955 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM043NB04LCZ C0G | TAIWAN SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 124A; 125W; TO220AB On-state resistance: 43.5mΩ Mounting: THT Power dissipation: 125W Gate charge: 76nC Polarisation: unipolar Drain current: 124A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM043NH04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | auf Bestellung 4861 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM043NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2531 pF @ 25 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM043NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2531 pF @ 25 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM043NH04LCR | Taiwan Semiconductor | Trans MOSFET N-CH 40V 54A 8-Pin PDFN-U EP | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM043NH04LCR | Taiwan Semiconductor | MOSFETs 40V, 54A, Single, N-Channel Low Voltage MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM043NH04LCR RLG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | auf Bestellung 4764 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM043NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | auf Bestellung 3718 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM043NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM045NA03CR | Taiwan Semiconductor | MOSFET Power MOSFET, N-CHL, 30V, 108A, 4.5mOhm | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM045NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 108A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 108A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM045NA03CR RLG | Taiwan Semiconductor | MOSFET 30V 108A Single N-Ch annel Power MOSFET | auf Bestellung 68 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM045NA03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 108A 8PDFN Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 108A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1194 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 30 V | auf Bestellung 82 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM045NB06CR RLG | Taiwan Semiconductor | MOSFET 60V 104A 5mOhm N-Chan Pwr MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM045NB06CR RLG | TAIWAN SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U On-state resistance: 5mΩ Mounting: SMD Power dissipation: 45W Gate charge: 104nC Polarisation: unipolar Drain current: 16A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tape Case: PDFN56U | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM045NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 16A/104A 8PDFN Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-PDFN (5.2x5.75) Vgs(th) (Max) @ Id: 4V @ 250µA | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM045NB06CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 16A/104A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 6870 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-PDFN (5.2x5.75) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 104A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM048NB06LCR | Taiwan Semiconductor | LDO Voltage Regulators 60V, 107A, Single, N-Channel Low Voltage MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM048NB06LCR | Taiwan Semiconductor | Trans MOSFET N-CH 60V 107A 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM048NB06LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 60V 107A 8-Pin PDFN EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM048NB06LCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 16A/107A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V | auf Bestellung 4003 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM048NB06LCR RLG | Taiwan Semiconductor | MOSFETs 60V, 107A, Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM048NB06LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 60V 107A 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM048NB06LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 60V 107A 8-Pin PDFN EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM048NB06LCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 16A/107A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 107A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 16A, 10V Power Dissipation (Max): 3.1W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5.2x5.75) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6253 pF @ 30 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM048NB06LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 60V 107A 8-Pin PDFN EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM048NB06LCR RLG | TAIWAN SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 105nC Kind of package: tape Kind of channel: enhancement | auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM048NB06LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 60V 107A 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM048NM15TL RAG | Taiwan Semiconductor Corporation | Description: 150V, 224A, SINGLE, N-CHANNEL LO Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 224A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TOLLA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9924 pF @ 75 V | auf Bestellung 1995 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM048NM15TL RAG | Taiwan Semiconductor Corporation | Description: 150V, 224A, SINGLE, N-CHANNEL LO Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 224A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TOLLA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9924 pF @ 75 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM0505S | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM0512D | auf Bestellung 9 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM0512S | Traco Power | DC-DC перетворювач, Кіл. вих. кан. = 1, Uвих1, В = 12, Pвих, Вт = 1, Uвх (max), В = 5,5, Uвх (min), В = 4,5, Iвих1, А = 0,08, Uізол., В = 1 000, ККД, % = 80, Uвих, % = 3, Габ. розм, мм = 12,7 x 8,0 x 11,1, Рів. пульс., мВ = 120, Тексп, °С = -40...+85,... Anzahl je Verpackung: 60 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM0512S | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM0515S | Traco Power | DC-DC перетворювач, Кіл. вих. кан. = 1, Uвих1, В = 15, Pвих, Вт = 0,975, Uвх (max), В = 5,5, Uвх (min), В = 4,5, Iвих1, А = 0,065, ККД, % = 81, Габ. розм, мм = 12.7 x 8.0 x 8.1, Тексп, °С = -40...+85,... Джерела живлення Корпус: 14-SMD Од. вим: шт Anzahl je Verpackung: 60 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM051N04LCP ROG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 16A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM051N04LCP ROG | Taiwan Semiconductor Corporation | Description: 40V, 96A, SINGLE N-CHANNEL POWER Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 96A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 16A, 10V Power Dissipation (Max): 2.6W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2456 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM051N04LCP ROG | Taiwan Semiconductor | MOSFETs 40V, 96A, Single N-Channel Power MOSFET | auf Bestellung 4853 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM051N04LCP ROG | Taiwan Semiconductor Corporation | Description: 40V, 96A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 96A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 16A, 10V Power Dissipation (Max): 2.6W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2456 pF @ 20 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM052N06PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 100A 8PDFN | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM052N06PQ56 RLG | Taiwan Semiconductor | MOSFET 60V N 100Amp channel Mosfet | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM052N06PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 100A 8PDFN | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM052NB03CR RLG | Taiwan Semiconductor | MOSFETs 30V, 90A, Single N-Channel Power MOSFET | auf Bestellung 2489 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM052NB03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 17A/90A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17A, 10V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2294 pF @ 15 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM052NB03CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 17A/90A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 17A, 10V Power Dissipation (Max): 3.1W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2294 pF @ 15 V | auf Bestellung 4980 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM055N03EPQ56 | Taiwan Semiconductor Corporation | Description: 30V, 80A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (5x5.8) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM055N03EPQ56 | Taiwan Semiconductor | MOSFETs 30V, 80A, Single, N-Channel Low Voltage MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM055N03EPQ56 RLG | Taiwan Semiconductor | Trans MOSFET N-CH 30V 80A 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM055N03EPQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 80A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM055N03EPQ56 RLG | Taiwan Semiconductor | MOSFETs 30V, 80A, Single N-Channel Power MOSFET | auf Bestellung 9392 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM055N03EPQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 80A 8PDFN Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM055N03PQ56 | Taiwan Semiconductor Corporation | Description: 30V, 80A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (5x5.8) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 74W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM055N03PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 80A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM055N03PQ56 RLG | Taiwan Semiconductor | Trans MOSFET N-CH 30V 80A 8-Pin DFN EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM055N03PQ56 RLG | Taiwan Semiconductor | MOSFETs 30V, 80A, Single N-Channel Power MOSFET | auf Bestellung 4958 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM055N03PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 30V 80A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM056NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27.3 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 3.6V @ 250µA Power Dissipation (Max): 78.9W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM056NH04CR RLG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM056NH04CR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 27.3 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 3.6V @ 250µA Power Dissipation (Max): 78.9W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM056NH04CV RGG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Supplier Device Package: 8-PDFN (3.1x3.1) Vgs(th) (Max) @ Id: 3.6V @ 250µA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1828 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM056NH04CV RGG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1828 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: 8-PDFN (3.1x3.1) Vgs(th) (Max) @ Id: 3.6V @ 250µA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) | auf Bestellung 9950 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM056NH04CV RGG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | auf Bestellung 9923 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM056NH04LCR | Taiwan Semiconductor | Trans MOSFET N-CH 40V 54A 8-Pin PDFN-U EP | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM056NH04LCR | Taiwan Semiconductor | MOSFETs 40V, 54A, Single, N-Channel Low Voltage MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| TSM056NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 78.9W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM056NH04LCR RLG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM056NH04LCR RLG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFNU (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 78.9W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM056NH04LCV RGG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2076 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (3.1x3.1) | auf Bestellung 9955 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM056NH04LCV RGG | Taiwan Semiconductor Corporation | Description: 40V, 54A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 2076 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (3.1x3.1) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 34W (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM056NH04LCV RGG | Taiwan Semiconductor | MOSFETs 40V, 54A, Single N-Channel Power MOSFET | auf Bestellung 9799 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM05N03CW | Taiwan Semiconductor Co., Ltd. | Trans N-CHANNEL 30V 5A 3W 0.06R TSM05N03CW RPG TTSM05n03cw Anzahl je Verpackung: 5 Stücke | auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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