Produkte > DMN
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| DMN3018SFGQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3018SFGQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 1945 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3018SFGQ-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 8.5A PWRDI3333-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3018SSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 6.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.7A Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3018SSD-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.2A; 1.5W; SO8; ESD Version: ESD Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.2A On-state resistance: 30mΩ Power dissipation: 1.5W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape | auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3018SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 6.7A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3018SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 6.7A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3018SSD-13 | Diodes Incorporated | MOSFETs 30V Dual N-Ch Enh 22mOhm 10V 6.7A | auf Bestellung 9182 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3018SSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 6.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.7A Input Capacitance (Ciss) (Max) @ Vds: 697pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 12962 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3018SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.3A 8-Pin SO T/R | auf Bestellung 55000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3018SSS-13 | Diodes Incorporated | Description: MOSFET N CH 30V 7.3A 8-SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V | auf Bestellung 1771 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3018SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3018SSS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | auf Bestellung 3615 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3018SSS-13 | Diodes Incorporated | Description: MOSFET N CH 30V 7.3A 8-SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3018SSS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.3A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3018SSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 60A; 1.1W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 60A Power dissipation: 1.1W Case: SO8 Gate-source voltage: ±25V On-state resistance: 35mΩ Mounting: SMD Gate charge: 13.2nC Kind of package: 13 inch reel; tape Kind of channel: enhancement | auf Bestellung 2200 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3020LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 11.3A TO252-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3020LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 11.3A TO252-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3020UFDF-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3020UFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 15A UDFN2020-6 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3020UFDF-7 | DIODES INC. | Description: DIODES INC. - DMN3020UFDF-7 - Leistungs-MOSFET, n-Kanal, 30 V, 15 A, 0.016 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 600mV Verlustleistung: 2.03W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.016ohm | auf Bestellung 3015 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3020UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 15A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 1304 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 8 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.03W (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) FET Type: N-Channel Technology: MOSFET (Metal Oxide) | auf Bestellung 1125 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3020UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 15A 6UDFN Input Capacitance (Ciss) (Max) @ Vds: 1304 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 8 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: U-DFN2020-6 (Type F) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.03W (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3020UFDF-7 | DIODES INC. | Description: DIODES INC. - DMN3020UFDF-7 - Leistungs-MOSFET, n-Kanal, 30 V, 15 A, 0.016 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Gate-Source-Schwellenspannung, max.: 600mV Verlustleistung: 2.03W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.016ohm | auf Bestellung 3015 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3020UFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 483 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3020UFDF-7-W | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3020UFDFQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3020UFDFQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3020UTS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 4253 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3020UTS-13 | DIODES INC. | Description: DIODES INC. - DMN3020UTS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 15 A, 0.015 ohm, TSSOP, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1V Verlustleistung: 850mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TSSOP Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.015ohm | auf Bestellung 1904 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3020UTS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 15A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1304 pF @ 15 V | auf Bestellung 18825 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3020UTS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 15A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1304 pF @ 15 V | auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3020UTS-13 | DIODES INC. | Description: DIODES INC. - DMN3020UTS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 15 A, 0.015 ohm, TSSOP, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1V Verlustleistung: 850mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TSSOP Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.015ohm | auf Bestellung 1904 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3021LFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V 30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3021LFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K | auf Bestellung 9440 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3021LFDF-7 | DIODES INC. | Description: DIODES INC. - DMN3021LFDF-7 - Leistungs-MOSFET, n-Kanal, 30 V, 9.3 A, 0.015 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 9.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 730mW Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2630 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3021LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 11.8A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V Power Dissipation (Max): 2.03W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 15 V | auf Bestellung 22710 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3021LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 11.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V Power Dissipation (Max): 2.03W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 15 V | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3022LDG-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.6A PWRDI3333 Supplier Device Package: PowerDI3333-8 (Type D) Vgs(th) (Max) @ Id: 2.1V @ 250µA, 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V, 8nC @ 4.5V Rds On (Max) @ Id, Vgs: 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V Input Capacitance (Ciss) (Max) @ Vds: 481pF @ 15V, 996pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 15A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.96W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Tape & Reel (TR) | auf Bestellung 153000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3022LDG-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3022LDG-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3022LFG-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 363 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3022LFG-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3023L | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3023L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 44A; 800mW; SOT23 Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.9A Gate charge: 18.4nC On-state resistance: 68mΩ Power dissipation: 0.8W Gate-source voltage: ±20V Pulsed drain current: 44A Kind of package: 13 inch reel; tape | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3023L-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 6.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3023L-13 | Diodes Incorporated | MOSFETs N-Ch Enh Mode FET 30Vdss 20Vgss 51A | auf Bestellung 8300 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3023L-13 | Diodes Zetex | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3023L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3023L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; 0.6W; SOT23; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Power dissipation: 0.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD | auf Bestellung 8881 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3023L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3023L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3023L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 6.2A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V | auf Bestellung 144000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3023L-7 | Diodes Incorporated | MOSFETs N-Ch Enh Mode FET 30Vdss 20Vgss 51A | auf Bestellung 74643 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3023L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3023L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3023L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3023L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R | auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 235 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3023L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3023L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R | auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 235 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3023L-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 6.2A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 15 V | auf Bestellung 146201 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3023L-7 | Diodes | MOSFET N-CH 30V 6.2A SOT23 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3023L-7 | DIODES INC. | Description: DIODES INC. - DMN3023L-7 - MOSFET, N-KANAL, 30V, 6.2A, SOT23 tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 6.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.8V euEccn: NLR Verlustleistung: 900mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 8074 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3023L-7 | Diodes Zetex | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3024LK3-13 | DIODES INC. | Description: DIODES INC. - DMN3024LK3-13 - Leistungs-MOSFET, n-Kanal, 30 V, 14.4 A, 0.024 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 14.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 4.1W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.024ohm SVHC: Lead (27-Jun-2024) | auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3024LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 9.78A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.78A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Power Dissipation (Max): 2.17W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V | auf Bestellung 4850 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3024LK3-13 | DIODES INC. | Description: DIODES INC. - DMN3024LK3-13 - Leistungs-MOSFET, n-Kanal, 30 V, 14.4 A, 0.024 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 14.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 4.1W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.024ohm SVHC: Lead (27-Jun-2024) | auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3024LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.78A; Idm: 46.5A; 2.17W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.78A Pulsed drain current: 46.5A Power dissipation: 2.17W Case: TO252 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 12.9nC Kind of package: 13 inch reel; tape Kind of channel: enhancement | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3024LK3-13 | Diodes Incorporated | MOSFETs ENHANCE MODE MOSFET 30V N-CHANNEL | auf Bestellung 3207 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3024LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 9.78A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.78A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Power Dissipation (Max): 2.17W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V | auf Bestellung 4721 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3024LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 6.8A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO | auf Bestellung 519 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3024LSD-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.8A; 1.3W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement | auf Bestellung 568 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3024LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 6.8A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3024LSD-13 | Diodes Incorporated | MOSFETs ENHANCE MODE MOSFET 30V DUAL N-CHANNEL | auf Bestellung 44461 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3024LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 6.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.8A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3024LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 6.8A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3024LSS-13 | Diodes Incorporated | MOSFETs ENHANCE MODE MOSFET 30V N-CHANNEL | auf Bestellung 1965 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3024LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 6.4A 8SO Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 17026 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3024LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 6.4A 8SO Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3024SFG-13 | Diodes Incorporated | MOSFETs 30V N-Ch ENH Mode PowerDI 7.5A - 6.3A | auf Bestellung 858 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3024SFG-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.5A PWRDI3333-8 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3024SFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.5A PWRDI3333-8 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3024SFG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerD3333-8,2K | auf Bestellung 3576 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3024SFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.5A PWRDI3333-8 | auf Bestellung 1521 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3025LFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3025LFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.9A; Idm: 40A; 1.3W Case: U-DFN2020-6 Mounting: SMD Kind of package: 13 inch reel; tape Pulsed drain current: 40A Power dissipation: 1.3W Gate charge: 13.2nC Polarisation: unipolar Drain current: 7.9A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 30mΩ | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3025LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 9.9A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 7A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V | auf Bestellung 179882 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3025LFDF-7 | DIODES INC. | Description: DIODES INC. - DMN3025LFDF-7 - Leistungs-MOSFET, n-Kanal, 30 V, 8.3 A, 0.0205 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 8.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0205ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1295 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3025LFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 3K | auf Bestellung 1807 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3025LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.9A; Idm: 40A; 1.3W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape Pulsed drain current: 40A Power dissipation: 1.3W Gate charge: 13.2nC Polarisation: unipolar Drain current: 7.9A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 30mΩ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3025LFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 9.9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Rds On (Max) @ Id, Vgs: 20.5mOhm @ 7A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 641 pF @ 15 V | auf Bestellung 177000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3025LFDF-7 | DIODES INC. | Description: DIODES INC. - DMN3025LFDF-7 - Leistungs-MOSFET, n-Kanal, 30 V, 8.3 A, 0.0205 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 8.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 660mW Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0205ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1295 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3025LFG-13 | Diodes Incorporated | MOSFET 30V N-CH MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3025LFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W Case: PowerDI3333-8 Mounting: SMD Kind of package: 13 inch reel; tape Pulsed drain current: 60A Power dissipation: 1.3W Gate charge: 11.6nC Polarisation: unipolar Drain current: 7.8A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 28mΩ | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3025LFG-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.5A PWRDI3333-8 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3025LFG-7 | Diodes Incorporated | Description: MOSFET N CH 30V 7.5A POWERDI Input Capacitance (Ciss) (Max) @ Vds: 605 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | auf Bestellung 249949 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3025LFG-7 | Diodes Incorporated | Description: MOSFET N CH 30V 7.5A POWERDI Input Capacitance (Ciss) (Max) @ Vds: 605 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | auf Bestellung 248000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3025LFG-7 | Diodes Incorporated | MOSFETs 30V N-CH MOSFET | auf Bestellung 2229 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3025LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W Case: PowerDI3333-8 Mounting: SMD Kind of package: 7 inch reel; tape Pulsed drain current: 60A Power dissipation: 1.3W Gate charge: 11.6nC Polarisation: unipolar Drain current: 7.8A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 28mΩ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| DMN3025LFV-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 2655 Stücke: Lieferzeit 10-14 Tag (e) |
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