Produkte > Tsm
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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| TSM60NE285CE RVG | Taiwan Semiconductor Corporation | Description: 600V, 16A, SINGLE N-CHANNEL HIGH Input Capacitance (Ciss) (Max) @ Vds: 874 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: 8-PDFN (8x8) Vgs(th) (Max) @ Id: 6V @ 1.4mA Power Dissipation (Max): 164W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 12V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM60NE285CH C5G | Taiwan Semiconductor | MOSFETs 600V, 15A, Single N-Channel High Voltage MOSFETs | Produkt ist nicht verfügbar | Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM60NE285CH C5G | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.4mA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V | auf Bestellung 3726 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM60NE285CIT C0G | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 274mOhm @ 3.2A, 12V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.4mA Supplier Device Package: ITO-220TL Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 300 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM60NE285CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 6V @ 1.4mA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V | auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM60NE285CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET Vgs(th) (Max) @ Id: 6V @ 1.4mA Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Supplier Device Package: TO-252 (DPAK) | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM60NE285CP ROG | Taiwan Semiconductor | MOSFETs 600V, 15A, Single N-Channel High Voltage MOSFETs | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6502CR | Taiwan Semiconductor Corporation | Description: MOSFET N/P-CH 60V 24A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 40W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6502CR RLG | Taiwan Semiconductor | Trans MOSFET N/P-CH 60V 5.4A/4A 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6502CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N/P-CH 60V 24A 8PDFN Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 40W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM6502CR RLG | Taiwan Semiconductor | MOSFETs 60V, 24A, -60V, -18A, Complementary N & P-Channel Power MOSFET | auf Bestellung 5006 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM6502CR RLG | Taiwan Semiconductor | Trans MOSFET N/P-CH 60V 5.4A/4A 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6502CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N/P-CH 60V 24A 8PDFN Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 4.5V, 9.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1159pF @ 30V, 930pF @ 30V Current - Continuous Drain (Id) @ 25°C: 24A (Tc), 18A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 40W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) | auf Bestellung 7038 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM650N15CR | Taiwan Semiconductor Corporation | Description: 150V, 24A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 2.6W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650N15CR RLG | Taiwan Semiconductor | MOSFET 150V, 24A, Single N-Channel Power MOSFET | auf Bestellung 4990 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM650N15CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 150V 24A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650N15CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 150V 24A 8PDFN Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 150 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650N15CS | Taiwan Semiconductor Corporation | Description: 150V, 9A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650N15CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 150V 9A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650N15CS RLG | Taiwan Semiconductor | MOSFET 150V, 9A, Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650N15CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 150V 9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1783 pF @ 75 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650P02CX | Taiwan Semiconductor Corporation | Description: -20V, -4.1A, SINGLE P-CHANNEL PO Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 0.8V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650P02CX RFG | Taiwan Semiconductor | MOSFET -20V, -4.1A, Single P-Channel Power MOSFET | auf Bestellung 15113 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM650P02CX RFG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 20V 4.1A SOT23 Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 800mV @ 250µA Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V | auf Bestellung 70024 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM650P02CX RFG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 4.1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650P02CX RFG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 20V 4.1A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 800mV @ 250µA Power Dissipation (Max): 1.56W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM650P02CX RFG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 4.1A 3-Pin SOT-23 T/R | auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650P03CX | Taiwan Semiconductor Co., Ltd. | Transistor P-Channel MOSFET; 30V; 12V; 100mOhm; 4,1A; 1,56W; -55°C ~ 150°C; TSM650P03CX RFG TSM650P03CX TTSM650p03cx Anzahl je Verpackung: 100 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| TSM650P03CX | Taiwan Semiconductor | Trans MOSFET P-CH 30V 4.1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650P03CX | Taiwan Semiconductor | MOSFETs -30V, -4.1A, Single P-Channel MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650P03CX | Taiwan Semiconductor Corporation | Description: -30V, -4.1A, SINGLE P-CHANNEL PO Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650P03CX RFG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 30V 4.1A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V | auf Bestellung 60178 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM650P03CX RFG | Taiwan Semiconductor | Trans MOSFET P-CH 30V 4.1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650P03CX RFG | Taiwan Semiconductor | MOSFETs -30V, -4.1A, Single P-Channel Power MOSFET | auf Bestellung 4170 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM650P03CX RFG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 30V 4.1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 15 V | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM650P03CX RFG | Taiwan Semiconductor | Trans MOSFET P-CH 30V 4.1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM650P03CX RFG-ML | MOSLEADER | Description: P-Channel -30V -4.1A SOT-23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM65686-E | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM67V05-V35CRQ | auf Bestellung 182 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM67V05V-35CRQ | TEMIC | auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TSM67V05V35CRQ | TEMIC | auf Bestellung 118 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TSM680P06CH | Taiwan Semiconductor Corporation | Description: -60V, -18A, SINGLE P-CHANNEL POW Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-251S (IPAK SL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06CH | Taiwan Semiconductor | Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) TO-251S Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06CH X0G | Taiwan Semiconductor | MOSFETs -60V, -14.5A, Single P-Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06CH X0G | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 60V 18A TO251 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06CI C0G | Taiwan Semiconductor Corporation | Description: MOSFET P-CH 60V 18A ITO220 Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: ITO-220 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 17W (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06CI C0G | Taiwan Semiconductor | MOSFET 60V 18Amp P channel Power Mosfet | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06CP | Taiwan Semiconductor Co., Ltd. | MOSFET P-CHANNEL 60V 18A TO252 TSM680P06CP ROG; TSM680P06CP-ROG; TSM680P06CP TTSM680p06cp Anzahl je Verpackung: 10 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| TSM680P06CP | Taiwan Semiconductor Corporation | Description: -60V, -18A, SINGLE P-CHANNEL POW Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06CP | Taiwan Semiconductor | P Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06CP ROG | Taiwan Semiconductor | Trans MOSFET P-CH 60V 18A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06CP ROG | Taiwan Semiconductor | MOSFETs -60V, -14.5A, Single P-Channel Power MOSFET | auf Bestellung 5079 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM680P06CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 60V 18A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V | auf Bestellung 12123 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM680P06CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 60V 18A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM680P06CP ROG | Taiwan Semiconductor | Trans MOSFET P-CH 60V 18A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06CZ C0G | Taiwan Semiconductor | MOSFET 60V 18Amp P channel Mosfet | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06CZ C0G | Taiwan Semiconductor Corporation | Description: MOSFET P-CH 60V 18A TO220 Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06DPQ56 | Taiwan Semiconductor | Dual P Channel MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06DPQ56 | Taiwan Semiconductor Corporation | Description: MOSFET 2P-CH 60V 12A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06DPQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2P-CH 60V 12A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM680P06DPQ56 RLG | Taiwan Semiconductor | MOSFETs -60, -12, Dual P-Channel | auf Bestellung 6565 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM680P06DPQ56 RLG | Taiwan Semiconductor | Trans MOSFET P-CH 60V 12A 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM680P06DPQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2P-CH 60V 12A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 30V Rds On (Max) @ Id, Vgs: 68mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active | auf Bestellung 9816 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM680P06DPQ56 RLG | Taiwan Semiconductor | Trans MOSFET P-CH 60V 12A 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6866SDCA | Taiwan Semiconductor | Trans MOSFET N-CH 20V 6A 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6866SDCA | Taiwan Semiconductor Corporation | Description: 20V, 6A, DUAL N-CHANNEL POWER MO Part Status: Active Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 0.6V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.6W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6866SDCA | Taiwan Semiconductor | MOSFETs Dual 20V N channel MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6866SDCA RVG | Taiwan Semiconductor | Trans MOSFET N-CH 20V 6A 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 300000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6866SDCA RVG | Taiwan Semiconductor Corporation | Description: MOSFET 2 N-CH 20V 6A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6866SDCA RVG | Taiwan Semiconductor | MOSFET 20V, 6A, Dual N-Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6866SDCA RVG | Taiwan Semiconductor | Trans MOSFET N-CH 20V 6A 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 300000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6866SDCA RVG | Taiwan Semiconductor Corporation | Description: MOSFET 2 N-CH 20V 6A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 565pF @ 8V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6963SDCA | Taiwan Semiconductor Corporation | Description: MOSFET 2P-CH 20V 4.5A 8TSSOP Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.14W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6963SDCA | Taiwan Semiconductor | Trans MOSFET P-CH 20V 4.5A 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6963SDCA RVG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 4.5A 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 300000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6963SDCA RVG | Taiwan Semiconductor | MOSFET -20V, -4.5A, Dual P-Channel Power MOSFET | auf Bestellung 21207 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM6963SDCA RVG | Taiwan Semiconductor Corporation | Description: MOSFET 2P-CH 20V 4.5A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.14W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP | auf Bestellung 63143 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM6963SDCA RVG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 4.5A 8-Pin TSSOP T/R | auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6963SDCA RVG | Taiwan Semiconductor Corporation | Description: MOSFET 2P-CH 20V 4.5A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.14W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM6963SDCA RVG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 4.5A 8-Pin TSSOP T/R | auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 18 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6963SDCA RVG | Taiwan Semiconductor Co., Ltd. | Transistor 2xP-Channel MOSFET; 20V; 12V; 68mOhm; 4,5A; 1,14W; -55°C ~ 150°C; TSM6963SDCA RVG TSM6963SDCA TTSM6963sdca Anzahl je Verpackung: 25 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| TSM6963SDCARV | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM6968DCA | Taiwan Semiconductor | MOSFET 20V Dual N channel MOSFET ESD protected | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6968DCA | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 20V 6.5A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.04W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP | Produkt ist nicht verfügbar | Mindestbestellmenge: 36000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6968DCA | TSM | SSOP-8 | auf Bestellung 293774 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6968DCA RVG | Taiwan Semiconductor | MOSFET 20V Dual N channel Mosfet ESD protected | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6968DCA RVG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 20V 6.5A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.04W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 501000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6968DCA RVG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 20V 6.5A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.04W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6968SDA-RV | auf Bestellung 58000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM6968SDCA | SOP-8 | auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| TSM6968SDCA | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 20V 6.5A 8TSSOP Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.04W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 36000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6968SDCA | Taiwan Semiconductor | MOSFET 20V Dual N channel MOSFET ESD protected | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6968SDCA RV | Taiwan Semiconductor | MOSFET 20V Dual N Channel MOSFET ESD protected | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6968SDCA RVG | Taiwan Semiconductor | MOSFET 20V, 6.5A, Dual N-Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 150000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6968SDCA RVG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 20V 6.5A 8TSSOP Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.04W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 150000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| TSM6968SDCA RVG | Taiwan Semiconductor | Trans MOSFET N-CH 20V 6.5A 8-Pin TSSOP T/R | auf Bestellung 8927 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM6968SDCA RVG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 20V 6.5A 8TSSOP Supplier Device Package: 8-TSSOP Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Rds On (Max) @ Id, Vgs: 22mOhm @ 6.5A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.04W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) | auf Bestellung 86 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM6968SDCA RVG | Taiwan Semiconductor | Trans MOSFET N-CH 20V 6.5A 8-Pin TSSOP T/R | auf Bestellung 8927 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM6981DCARV | auf Bestellung 18059 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM6D138M010AH6410D493 | KEMET | Description: CAP TANT 1300UF 20% 10V SMD Voltage - Rated: 10 V Capacitance: 1300 µF Height - Seated (Max): 0.377" (9.58mm) Manufacturer Size Code: 6D ESR (Equivalent Series Resistance): 83mOhm Ratings: COTS Operating Temperature: -55°C ~ 125°C Type: Molded Mounting Type: Surface Mount Size / Dimension: 0.315" L x 0.350" W (8.00mm x 8.90mm) Package / Case: Stacked SMD, 6 J-Lead Features: High Reliability Tolerance: ±20% Packaging: Tray | Produkt ist nicht verfügbar | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |