Produkte > DI0
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| DI068P04D1-AQ | Diotec Semiconductor | Description: MOSFET P-CH 68A TO-252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 68A Power Dissipation (Max): 54W Supplier Device Package: TO-252 (DPAK) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2886 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI068P04D1-AQ | DIOTEC | Description: DIOTEC - DI068P04D1-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 68 A, 0.0073 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DI068P04D1-AQ | Diotec Semiconductor | MOSFETs MOSFET, DPAK, -40V, -68A, 150C, P, AEC-Q101 | auf Bestellung 2511 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI068P04D1-AQ | Diotec Semiconductor | Description: MOSFET P-CH 68A TO-252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 68A Power Dissipation (Max): 54W Supplier Device Package: TO-252 (DPAK) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI06W8-05 | MEAN WELL | Isolated DC/DC Converters - Through Hole 6W 9-75Vin +/-5V +/-0-600mA 1x1 Regulated DIP | auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI06W8-12 | MEAN WELL USA Inc. | Description: I/P: 9-75VDC;O/P:12V 250MA,1"*1" Packaging: Bulk Package / Case: 6-DIP Module, 5 Leads Size / Dimension: 1.00" L x 1.00" W x 0.40" H (25.4mm x 25.4mm x 10.2mm) Mounting Type: Through Hole Type: Isolated Module Operating Temperature: -40°C ~ 90°C (With Derating) Applications: ITE (Commercial) Voltage - Input (Max): 75V Approval Agency: CE, EAC, UKCA Efficiency: 85% Current - Output (Max): 250mA, 250mA Voltage - Input (Min): 9V Voltage - Output 1: 12V Voltage - Output 2: -12V Power (Watts): 6 W Number of Outputs: 2 Voltage - Isolation: 3 kV | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI06W8-12 | MEAN WELL | DC/DC Converters - Through Hole 6W 9-75Vin +/-12V +/-0-250mA 1x1 Regulated DIP | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI06W8-15 | MEAN WELL | Isolated DC/DC Converters - Through Hole 6W 9-75Vin +/-15V +/-0-200mA 1x1 Regulated DIP | auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI06W8-15 | MEAN WELL USA Inc. | Description: I/P: 9-75VDC;O/P:15V 200MA,1"*1" Voltage - Isolation: 3 kV Number of Outputs: 2 Power (Watts): 6 W Voltage - Output 2: -12V Voltage - Output 1: 15V Voltage - Input (Min): 9V Current - Output (Max): 200mA, 200mA Efficiency: 84.5% Approval Agency: CE, EAC, UKCA Voltage - Input (Max): 75V Applications: ITE (Commercial) Operating Temperature: -40°C ~ 90°C (With Derating) Type: Isolated Module Mounting Type: Through Hole Size / Dimension: 1.00" L x 1.00" W x 0.40" H (25.4mm x 25.4mm x 10.2mm) Package / Case: 6-DIP Module, 5 Leads Packaging: Bulk | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI070P04PQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, -40V, -70A, 150C, P | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI070P04PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 P -40V Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-QFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI070P04PQ-AQ | DIOTEC | Description: DIOTEC - DI070P04PQ-AQ - Leistungs-MOSFET, p-Kanal, 40 V, 70 A, 0.0065 ohm, QFN, Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 4985 Stücke: Lieferzeit 14-21 Tag (e) |
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| DI070P04PQ-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 5X6, -40V, -70A Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 4018 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI070P04PQ-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, -40V, -70A, 150C, P, AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI070P04PQ-AQ | Diotec Semiconductor | Description: MOSFET, POWERQFN 5X6, -40V, -70A Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI072N06PT | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Power Dissipation (Max): 43W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI074N06D1K | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 74A; Idm: 300A; 56.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 74A Pulsed drain current: 300A Power dissipation: 56.8W Case: DPAK; TO252AA On-state resistance: 5.8mΩ Mounting: SMD Gate charge: 31nC Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI074N06D1K | Diotec Semiconductor | Description: IC Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 1691 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 65 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 56.8W (Tc) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI075N04PT-AQ | Diotec Semiconductor | N-канальний ПТ, Udss, В = 40, Id = 75 А, Ciss, пФ @ Uds, В = 2936 @ 25, Qg, нКл = 46, Rds = 2,8 мОм, Ugs(th) = 2,5 В, Р, Вт = 35,7, Тексп, °C = -55...+155, Тип монт. = SMD,... Транзистори Корпус: PowerVDFN-8 Очікується: 60 Од. вим: шт Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI075N04PT-AQ | Diotec Semiconductor | Description: MOSFET N-CH 40V 75A 8-POWERVDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V Power Dissipation (Max): 35.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 4445 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI075N04PT-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 3x3, 40V, 75A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI075N04PT-AQ | Diotec Semiconductor | Description: MOSFET N-CH 40V 75A 8-POWERVDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 23A, 10V Power Dissipation (Max): 35.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2936 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI075N06PQ-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 300A; 39W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 75A Pulsed drain current: 300A Power dissipation: 39W Case: PQFN5X6 On-state resistance: 9.8mΩ Mounting: SMD Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI075N08PQ | Diotec Semiconductor | Description: MOSFET N-CH 80V 75A 8-POWERTDFN Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 55A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 40 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI075N08PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 47A; Idm: 350A; 45W; QFN5x6 Mounting: SMD Gate charge: 89nC Type of transistor: N-MOSFET On-state resistance: 4.2mΩ Kind of channel: enhancement Gate-source voltage: ±20V Drain current: 47A Power dissipation: 45W Drain-source voltage: 80V Kind of package: reel; tape Pulsed drain current: 350A Case: QFN5x6 Polarisation: unipolar | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI075N08PQ | Diotec Semiconductor | MOSFETs PowerQFN 5x6, N, 80V, 75A, 4m?, 150C | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N03PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N03PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 160A; 78W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Pulsed drain current: 160A Power dissipation: 78W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N03PQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 30V, 80A, 150C, N | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 65V, 105A, 150C, N | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 65V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI080N06PQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 65V Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 40A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI080N06PQ-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 65V 105A 0 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ-AQ | DIOTEC SEMICONDUCTOR | Description: DIOTEC SEMICONDUCTOR - DI080N06PQ-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 105 A, 3000 µohm, QFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 65V rohsCompliant: Y-EX Dauer-Drainstrom Id: 105A hazardous: false rohsPhthalatesCompliant: YES isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 65.8W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3000µohm | auf Bestellung 4860 Stücke: Lieferzeit 14-21 Tag (e) |
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| DI080N06PQ-AQ | Diotec Semiconductor | Trans MOSFET N-CH 60V 80A 8-Pin QFN EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ-AQ | DIOTEC SEMICONDUCTOR | Description: DIOTEC SEMICONDUCTOR - DI080N06PQ-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 105 A, 3000 µohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 65V rohsCompliant: Y-EX Dauer-Drainstrom Id: 105A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 65.8W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3000µohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4860 Stücke: Lieferzeit 14-21 Tag (e) |
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| DI080N06PQ-AQ | Diotec Semiconductor | Description: MOSFET POWERQFN 5X6 N 65V 105A 0 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4128 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 3845 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI080N06PQ-AQ | Diotec Semiconductor | MOSFETs MOSFET, PowerQFN 5x6, 65V, 105A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N06PQ-AQ | Diotec Semiconductor | DI080N06PQ-AQ | auf Bestellung 3750 Stücke: Lieferzeit 14-21 Tag (e) |
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| DI080N10D1 | Diotec Semiconductor | MOSFETs DPAK, N, 100V, 80A, 4.2m?, 150C | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N10PQ-AQ | Diotec Semiconductor | Description: MOSFET N-CH 100V 80A 8-POWERTDFN Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-QFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3742 pF @ 50 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI080N10PQ-AQ | Diotec Semiconductor | MOSFETs PowerQFN 5x6, N, 100V, 80A, AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI087N03D1-AQ | Diotec Semiconductor | MOSFETs MOSFET, DPAK, 30V, 87A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI090N15D2 | Diotec Semiconductor | D2PAK, N, 150V, 90A, 12m, 175C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI090N15D2-AQ | Diotec Semiconductor | D2PAK, N, 150V, 90A, 12m, 175C, AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI096N03PQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 96A; Idm: 400A; 48W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 96A Pulsed drain current: 400A Power dissipation: 48W Case: PQFN5X6 On-state resistance: 3.5Ω Mounting: SMD Gate charge: 57nC Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI096N03PQ | Diotec Semiconductor | PowerQFN 5x6, N, 30V, 96A, 3.5m, 175C | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI097N15D2 | Diotec Semiconductor | D2PAK, N, 150V, 97A, 11 m, 150C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI0A35N06PGK | Diotec Semiconductor | MOSFETs DFN1006-3, N, 60V, 0.35A, 1.4?, 150C | Produkt ist nicht verfügbar | Mindestbestellmenge: 11 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI0A35N06PGK | Diotec Semiconductor | Description: DI0A35N06PGK Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: DFN1006-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 223mW Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 350mA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Bulk | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI0A35N06PGK-AQ | Diotec Semiconductor | MOSFETs MOSFET, DFN1006-3, 60V, 0.35A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 9 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI0A35N06PGK-AQ | Diotec Semiconductor | Description: MOSFET N-CH 60V 350MA SC-101 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 223mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 10004 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI0A35N06PGK-AQ | Diotec Semiconductor | Description: MOSFET N-CH 60V 350MA SC-101 Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V Power Dissipation (Max): 223mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DFN1006-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI0A4N45SQ2 | Diotec Semiconductor | Description: MOSFET 2N-CH 450V 0.4A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DI0A4N45SQ2 | Diotec Semiconductor | MOSFETs MOSFET, SO-8, 450V, 0.4A, 150C, N | auf Bestellung 3440 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI0A4N45SQ2 | Diotec Semiconductor | Description: MOSFET 2N-CH 450V 0.4A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |