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PJA3430_R1_00001PanjitMOSFETs 20V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 6648 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.49 EUR
12+0.3 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
3000+0.099 EUR
6000+0.088 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3430_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
auf Bestellung 6670 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
67+0.32 EUR
107+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3430_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.095 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3431_R1_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
auf Bestellung 5585 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
67+0.32 EUR
107+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 40 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3431_R1_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7 Stücke
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PJA3431_R1_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3431_R2_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3432-AU-R1-000A1PanjitMOSFET SOT-23/MOS/SOT/NFET-20TMN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3432-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3432-AU_R1_000A1PanjitMOSFETs 30V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 22244 Stücke:
Lieferzeit 10-14 Tag (e)
8+0.46 EUR
12+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
3000+0.088 EUR
6000+0.08 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3432-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3166 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
74+0.29 EUR
119+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3432-R1-00001PanjitMOSFET SOT-23/MOS/SOT/NFET-20TMN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3432-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3432_R1_00001PanjitMOSFETs 30V N-Channel Enhancement Mode MOSFETESD Protected
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7 Stücke
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PJA3432_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.095 EUR
6000+0.088 EUR
9000+0.07 EUR
15000+0.068 EUR
Mindestbestellmenge: 3000 Stücke
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PJA3432_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
auf Bestellung 16585 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.31 EUR
86+0.25 EUR
164+0.13 EUR
500+0.12 EUR
Mindestbestellmenge: 67 Stücke
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PJA3432_R2_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11220 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.5 EUR
69+0.31 EUR
111+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 42 Stücke
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PJA3433-AU_R1_000A1PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 38236 Stücke:
Lieferzeit 10-14 Tag (e)
8+0.46 EUR
12+0.29 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
3000+0.088 EUR
6000+0.08 EUR
Mindestbestellmenge: 8 Stücke
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PJA3433-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+0.092 EUR
9000+0.086 EUR
Mindestbestellmenge: 3000 Stücke
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PJA3433_R1_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 38938 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.49 EUR
12+0.3 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
3000+0.099 EUR
6000+0.08 EUR
Mindestbestellmenge: 7 Stücke
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PJA3433_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
auf Bestellung 9199 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.52 EUR
67+0.32 EUR
107+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 40 Stücke
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PJA3433_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
6000+0.095 EUR
9000+0.089 EUR
Mindestbestellmenge: 3000 Stücke
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PJA3433_R1_00001PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Pulsed drain current: -4.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1995 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.23 EUR
481+0.18 EUR
650+0.13 EUR
725+0.12 EUR
1000+0.094 EUR
Mindestbestellmenge: 385 Stücke
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PJA3433_R2_00001PanjitMOSFET A33/TR/13"/HF/12K/SOT-23/MOS/SOT/NFET-30TMP/NF30T-QI15/PJ///
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
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PJA3434-AU-R1-000A1PanjitMOSFET SOT-23/MOS/SOT/NFET-20TMN
Produkt ist nicht verfügbar
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PJA3434-R1-00001PanjitMOSFETs SOT23 N CHAN 20V
Produkt ist nicht verfügbar
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PJA3434_R1_00001PanjitMOSFETs 20V N-Channel Enhancement Mode MOSFET
auf Bestellung 2847 Stücke:
Lieferzeit 10-14 Tag (e)
9+0.42 EUR
14+0.25 EUR
100+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
3000+0.082 EUR
6000+0.071 EUR
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PJA3434_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
auf Bestellung 7331 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
79+0.27 EUR
126+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 48 Stücke
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PJA3434_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3740 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.29 EUR
463+0.18 EUR
792+0.11 EUR
1117+0.076 EUR
1205+0.07 EUR
Mindestbestellmenge: 295 Stücke
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PJA3434_R1_00001PanJit20V N-Channel Enhancement Mode MOSFET
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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PJA3434_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.089 EUR
6000+0.08 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3434_R2_00001PanjitMOSFETs 20V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
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PJA3435_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
auf Bestellung 6000 Stücke:
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3000+0.1 EUR
6000+0.09 EUR
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PJA3435_R1_00001PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.44 EUR
323+0.26 EUR
500+0.17 EUR
666+0.13 EUR
1000+0.11 EUR
3000+0.094 EUR
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PJA3435_R1_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 4637 Stücke:
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7+0.49 EUR
12+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
3000+0.11 EUR
6000+0.096 EUR
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PJA3435_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
auf Bestellung 8518 Stücke:
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44+0.48 EUR
70+0.3 EUR
112+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
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PJA3435_R2_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
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PJA3436-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJA3436-AU_R1_000A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
336+0.25 EUR
542+0.15 EUR
738+0.12 EUR
1000+0.1 EUR
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PJA3436-AU_R1_000A1PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
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PJA3436-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2162 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
74+0.29 EUR
119+0.18 EUR
500+0.13 EUR
1000+0.11 EUR
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PJA3436_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
auf Bestellung 8507 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.46 EUR
72+0.29 EUR
116+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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PJA3436_R1_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 5599 Stücke:
Lieferzeit 10-14 Tag (e)
8+0.45 EUR
13+0.27 EUR
100+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
3000+0.09 EUR
6000+0.088 EUR
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PJA3436_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
auf Bestellung 7500 Stücke:
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3000+0.098 EUR
6000+0.087 EUR
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PJA3436_R2_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
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PJA3438-AU-R1-000A1PanjitMOSFET SOT-23/MOS/SOT/NFET-50TMN
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Im Einkaufswagen  Stück im Wert von  UAH
PJA3438-AU-R2-000A1PanjitMOSFET SOT-23/MOS/SOT/NFET-50TMN
Produkt ist nicht verfügbar
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PJA3438-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 4933 Stücke:
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30+0.71 EUR
47+0.44 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
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PJA3438-AU_R1_000A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.48 EUR
275+0.31 EUR
439+0.19 EUR
500+0.17 EUR
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PJA3438-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 3000 Stücke:
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3000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
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PJA3438-AU_R1_000A1PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 1255 Stücke:
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7+0.49 EUR
12+0.3 EUR
100+0.19 EUR
500+0.13 EUR
1000+0.12 EUR
3000+0.12 EUR
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PJA3438-AU_R2_000A1PanjitMOSFET 50V N-Channel Enhancement Mode MOSFET-ESD Protected
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 Mindestbestellmenge: 12000 Stücke
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PJA3438-R1-00001PanjitMOSFET SOT-23/MOS/SOT/NFET-50TMN
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PJA3438-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
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PJA3438_R1_00001PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 6358 Stücke:
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9+0.42 EUR
14+0.25 EUR
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500+0.12 EUR
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PJA3438_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
auf Bestellung 31626 Stücke:
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50+0.42 EUR
82+0.25 EUR
133+0.15 EUR
500+0.12 EUR
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PJA3438_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
auf Bestellung 30000 Stücke:
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3000+0.084 EUR
6000+0.075 EUR
9000+0.071 EUR
15000+0.065 EUR
21000+0.063 EUR
30000+0.06 EUR
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PJA3438_R2_00001PanjitMOSFET 50V N-Channel Enhancement Mode MOSFET-ESD Protected
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PJA3439-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJA3439-AU_R1_000A1PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 8243 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.49 EUR
12+0.3 EUR
100+0.19 EUR
500+0.13 EUR
1000+0.12 EUR
3000+0.099 EUR
6000+0.096 EUR
Mindestbestellmenge: 7 Stücke
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PJA3439-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1149 Stücke:
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40+0.52 EUR
66+0.32 EUR
106+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
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PJA3439-AU_R1_000A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -300mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.51 EUR
271+0.31 EUR
448+0.19 EUR
622+0.13 EUR
1000+0.12 EUR
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PJA3439-AU_R2_000A1PanjitMOSFET /A39/TR/13"/HF/12K/SOT-23/MOS/SOT/NFET-60TMP/NF60T-QI03/PJ///
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
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PJA3439_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.093 EUR
6000+0.083 EUR
Mindestbestellmenge: 3000 Stücke
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PJA3439_R1_00001PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 30512 Stücke:
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9+0.42 EUR
14+0.25 EUR
100+0.15 EUR
500+0.12 EUR
1000+0.1 EUR
3000+0.088 EUR
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PJA3439_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
auf Bestellung 8383 Stücke:
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121+0.18 EUR
500+0.13 EUR
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PJA3439_R2_00001PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
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PJA3440-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3600 Stücke:
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25+0.86 EUR
35+0.61 EUR
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500+0.27 EUR
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PJA3440-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V
Qualification: AEC-Q101
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PJA3440-AU_R1_000A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
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PJA3440-AU_R2_000A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
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PJA3440_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 10148 Stücke:
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PJA3440_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V
auf Bestellung 9000 Stücke:
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3000+0.17 EUR
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PJA3440_R1_00001PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 69963 Stücke:
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6+0.67 EUR
10+0.4 EUR
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500+0.19 EUR
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3000+0.14 EUR
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PJA3440_R2_00001PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
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PJA3441-AU-R1-000A1PanjitMOSFET SOT-23/MOS/SOT/NFET-40TMP
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PJA3441-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 8793 Stücke:
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27+0.8 EUR
43+0.49 EUR
100+0.31 EUR
500+0.23 EUR
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PJA3441-AU_R1_000A1PanjitMOSFETs 40V P-Channel Enhancement Mode MOSFET
auf Bestellung 10 Stücke:
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5+0.8 EUR
10+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.2 EUR
3000+0.17 EUR
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PJA3441-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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3000+0.17 EUR
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PJA3441-R1-00001PanjitMOSFET SOT-23/MOS/SOT/NFET-40TMP
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PJA3441-R2-00001PanjitMOSFET SOT-23/MOS/SOT/NFET-40TMP
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PJA3441_R1_00001PanJitPJA3441_R1_00001
auf Bestellung 2940 Stücke:
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738+0.37 EUR
1000+0.18 EUR
2000+0.17 EUR
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PJA3441_R1_00001PanjitMOSFETs 40V P-Channel Enhancement Mode MOSFET
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10+0.4 EUR
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PJA3441_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 20 V
auf Bestellung 25493 Stücke:
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32+0.67 EUR
50+0.42 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.18 EUR
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PJA3441_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 88mOhm @ 3.1A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 20 V
auf Bestellung 24000 Stücke:
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3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
15000+0.12 EUR
21000+0.11 EUR
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PJA3441_R1_00001PANJITMOSFET P-CH 40V 3.1A SOT23-3 Транзистори
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2+3 EUR
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PJA3441_R2_00001PanjitMOSFETs 40V P-Channel Enhancement Mode MOSFET
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PJA3448-R1-00001PanjitMOSFET
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PJA3448_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 71mOhm @ 3.3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 241 pF @ 20 V
Produkt ist nicht verfügbar
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PJA3448_R1_00001PanjitMOSFETs 40V P-Channel Enhancement Mode MOSFET
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PJA3448_R2_00001PanjitMOSFETs 40V P-Channel Enhancement Mode MOSFET
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PJA3449-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 299 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 25760 Stücke:
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28+0.75 EUR
36+0.58 EUR
100+0.36 EUR
500+0.32 EUR
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PJA3449-AU_R1_000A1PanjitMOSFETs 40V P-Channel Enhancement Mode MOSFET
auf Bestellung 11936 Stücke:
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PJA3449-AU_R1_000A1Panjit International Inc.Description: SOT-23, MOSFET
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 299 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
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3000+0.2 EUR
6000+0.19 EUR
9000+0.18 EUR
Mindestbestellmenge: 3000 Stücke
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PJA3449_R1_00001PanjitMOSFETs 40V P-Channel Enhancement Mode MOSFET
auf Bestellung 4658 Stücke:
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PJA3449_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 299 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 8760 Stücke:
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24+0.88 EUR
35+0.61 EUR
100+0.31 EUR
500+0.25 EUR
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PJA3449_R1_00001PANJITP-Channel 40 V 2.2A (Ta) 1.25W (Ta) Surface Mount SOT-23 Транзистори
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PJA3449_R1_00001Panjit International Inc.Description: SOT-23, MOSFET
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 299 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.1V @ 250µA
auf Bestellung 6000 Stücke:
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3000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
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PJA3449_R2_00001PanjitMOSFETs 40V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
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