Produkte > AOD
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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| AOD5B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 23A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 98 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 12ns/82ns Switching Energy: 140µJ (on), 40µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 9.4 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 20 A Power - Max: 54.4 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 23A 54.4W 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5B65M1 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 5A; 28W; TO252; Eoff: 0.07mJ; Eon: 0.08mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 5A Power dissipation: 28W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 15A Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Collector-emitter saturation voltage: 1.57V Turn-off switching energy: 0.07mJ Turn-on switching energy: 0.08mJ Turn-on time: 21ns Turn-off time: 157ns | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 10A TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 8.5ns/106ns Switching Energy: 80µJ (on), 70µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 15 A Power - Max: 69 W | auf Bestellung 2177 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD5B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 10A 69W 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 10A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 8.5ns/106ns Switching Energy: 80µJ (on), 70µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 15 A Power - Max: 69 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5B65MQ1E | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 5A; 21W; TO252 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 5A Power dissipation: 21W Case: TO252 Gate-emitter voltage: ±20V Pulsed collector current: 15A Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape | auf Bestellung 2401 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5B65MQ1E | Alpha & Omega Semiconductor Inc. | Description: IGBT 5A 650V TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 74 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 7ns/78ns Switching Energy: 90µJ (on), 60µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 8.8 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 15 A Power - Max: 52 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5B65N1 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 5A; 21W; TO252; Eoff: 0.049mJ; Eon: 0.081mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 5A Power dissipation: 21W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 15A Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Collector-emitter saturation voltage: 2.5V Turn-off switching energy: 0.049mJ Turn-on switching energy: 0.081mJ Turn-on time: 23ns Turn-off time: 114ns | auf Bestellung 2404 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5B65N1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 170 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 8ns/73ns Switching Energy: 81µJ (on), 49µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 9.2 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 15 A Power - Max: 52 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5N40 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 400V 4.2A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5N40 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 400V 4.2A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5N50 | AOS | MOSFET N-CH 500V 5A TO252 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5N50 Produktcode: 145010
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| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
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| AOD5N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5N50 | ALPHA&OMEGA | Transistor N-Channel MOSFET; 500V; 30V; 1,6Ohm; 5A; 104W; -50°C ~ 150°C; AOD5N50 TAOD5n50 Anzahl je Verpackung: 25 Stücke | auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOD5N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.1A; 104W; TO252 Drain-source voltage: 500V Drain current: 3.1A Case: TO252 Polarisation: unipolar On-state resistance: 1.6Ω Power dissipation: 104W Kind of channel: enhancement Gate charge: 11.5nC Gate-source voltage: ±30V Type of transistor: N-MOSFET Mounting: SMD | auf Bestellung 184 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5N50M | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5N50_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD5T40P | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 400V 3.9A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 1A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V | auf Bestellung 85 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD5T40P | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 400V 3.9A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 1A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD600A60 | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD600A60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 8A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V | auf Bestellung 2335 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD600A60 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 96W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 96W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 11.5nC Kind of channel: enhancement Pulsed drain current: 32A Kind of package: reel; tape | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD600A60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 8A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 100 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD600A70 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 8.5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V | auf Bestellung 3484 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD600A70 | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD600A70 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 8.5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD600A70 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 8.5A; 104W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 8.5A Power dissipation: 104W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 15.5nC Kind of channel: enhancement Kind of package: reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD600A70R | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 8.5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD600A70R | Alpha & Omega Semiconductor | Trans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD600A70R | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 8.5A; Idm: 34A; 104W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 8.5A Power dissipation: 104W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 15.5nC Kind of channel: enhancement Pulsed drain current: 34A Kind of package: reel; tape | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD600A70R | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 8.5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V | auf Bestellung 4355 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD603 | AO | TO-252 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD603A | ALPHA & OMEGA SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 60/-60V Drain current: 9.5/-9.5A Power dissipation: 13.5/21.5W Case: TO252-4 Gate-source voltage: ±20V On-state resistance: 60/115mΩ Mounting: SMD Gate charge: 3.8/7.4nC Kind of channel: enhancement Semiconductor structure: common drain | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD603A | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 60V 3.5A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.5A, 3A Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 30V Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD603A | ALPHA&OMEGA | Transistor N/P-Channel MOSFET; 60V; 20V; 110mOhm/180mOhm; 12A; 27W/42,5W; -55°C ~ 175°C; AOD603A TAOD603a Anzahl je Verpackung: 10 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOD603A | Alpha & Omega Semiconductor | Trans MOSFET N/P-CH 60V 3.5A/3A 5-Pin(4+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD603A TO252/4 | import | Transistor N/P-Channel MOSFET; 60V; 20V; 85mOhm/150mOhm; 13A/13A; 27W/42,5W; -55°C ~ 175°C; AOD603A TAOD603a c Anzahl je Verpackung: 50 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOD603L | AO | 07+ SOT-252 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD604 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 40V 8A TO252-5 Packaging: Tape & Reel (TR) Package / Case: TO-252-6, DPak (5 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W, 1.7W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-5 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD604L | AO | SOT-252 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD606 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 40V 8A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W, 1.7W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 404pF @ 20V Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD606 Produktcode: 29164
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Lieblingsprodukt
| A&O | Transistoren > MOSFET N-CH Gehäuse: D-Pak-5 (TO-252-5) Drain-Source-Spannung Uds, V: 40 V Drain-Strom Idd, A: 8 A Durchlasswiderstand Rds(on), Ohm: 0,033 Ohm Montage: SMD | auf Bestellung: 3 St.
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| AOD606L | AO | 07+ SOT-252 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD607 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 30V 12A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252-4L | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD607A | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 30V 8A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 19W (Tc), 30W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc), 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 8A, 10V, 27mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, 12nC @ 4.5V Vgs(th) (Max) @ Id: 2.6V @ 250µA, 2.4V @ 250µA Supplier Device Package: TO-252-4L | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD607A | ALPHA & OMEGA SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 30/-30V Drain current: 8/-9.4A Power dissipation: 7.5/12W Case: TO252-4 Gate-source voltage: ±20V On-state resistance: 25/27mΩ Mounting: SMD Gate charge: 6.7nC Kind of channel: enhancement Semiconductor structure: common drain | auf Bestellung 1806 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD607L | AO | SOT-252 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD607_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 30V 12A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Supplier Device Package: TO-252-4L | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD607_DELTA | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 30V 12A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 25W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 15V, 1100pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V, 37mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4.5V, 11.7nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2.4V @ 250µA Supplier Device Package: TO-252-4L Part Status: Obsolete | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD609 | ALPHA&OMEGA | Transistor N/P-Channel MOSFET; 40V; 20V; 46mOhm/66mOhm; 12A; 27W/30W; -55°C ~ 175°C; AOD609 TAOD609 Anzahl je Verpackung: 25 Stücke | auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOD609 | Alpha & Omega Semiconductor | Trans MOSFET N/P-CH 40V 12A 5-Pin(4+Tab) DPAK T/R | auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOD609 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 40V 12A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Not For New Designs | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD609 | ALPHA & OMEGA SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 12/-12A Power dissipation: 14/15W Case: TO252-4 Gate-source voltage: ±20V On-state resistance: 30/45mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 8.3/16.2nC Kind of transistor: complementary pair Semiconductor structure: common drain | auf Bestellung 141 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD609 | AOS | Trans MOSFET N/P-CH 40V 12A DPAK Транзистори | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOD609 | Alpha & Omega Semiconductor | Trans MOSFET N/P-CH 40V 12A 5-Pin(4+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD609 Produktcode: 207715
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Lieblingsprodukt
| Verschiedene Bauteile > Verschiedene Bauteile 1 | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| AOD609 | ALPHA&OMEGA | Transistor N/P-Channel MOSFET; 40V; 20V; 46mOhm/66mOhm; 12A; 27W/30W; -55°C ~ 175°C; AOD609 TAOD609 | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD609 | Alpha & Omega Semiconductor | Trans MOSFET N/P-CH 40V 12A 5-Pin(4+Tab) DPAK T/R | auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOD609 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 40V 12A TO252-4L Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel, Common Drain Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Not For New Designs | auf Bestellung 146 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD609G | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 40V 12A TO252-4L Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD609G | Alpha & Omega Semiconductor Inc. | Description: MOSFET N/P-CH 40V 12A TO252-4L Packaging: Tape & Reel (TR) Package / Case: TO-252-5, DPAK (4 Leads + Tab) Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 20V, 890pF @ 20V Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, 21nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-4L Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD609G | ALPHA & OMEGA SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 40/-40V Drain current: 12/-12A Power dissipation: 14/15W Case: TO252-4 Gate-source voltage: ±20V On-state resistance: 30/45mΩ Mounting: SMD Gate charge: 10/15.5nC Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD661 | Alpha & Omega Semiconductor Inc. | Description: MOSFET 2 N-CH 30V 12A TO252-4L | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD66406 | Alpha & Omega Semiconductor | N-Channel MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD66406 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 25A/60A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD66406 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45A; 20.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 45A Power dissipation: 20.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 8.5nC Kind of channel: enhancement | auf Bestellung 625 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD66406 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 25A/60A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V | auf Bestellung 11943 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD66919 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 70A; Idm: 220A; 62W On-state resistance: 6.5mΩ Mounting: SMD Pulsed drain current: 220A Power dissipation: 62W Gate charge: 47nC Polarisation: unipolar Technology: AlphaSGT™ Drain current: 70A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD66919 | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD66920 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 19.5A/70A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD66920 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 19.5A/70A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V | auf Bestellung 21404 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD66920 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 70A; Idm: 180A On-state resistance: 8.2mΩ Mounting: SMD Pulsed drain current: 180A Power dissipation: 35.5W Gate charge: 35nC Polarisation: unipolar Technology: AlphaSGT™ Drain current: 70A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD66920 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD66923 | AOS | MOSFET N-CH 100V 16.5A/58A TO252 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD66923 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 16.5A/58A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD66923 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36.5A; 29W; TO252 On-state resistance: 11mΩ Mounting: SMD Power dissipation: 29W Gate charge: 12.5nC Polarisation: unipolar Drain current: 36.5A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO252 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD66923 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 16.5A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD66923 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 16.5A/58A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 6.2W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1725 pF @ 50 V | auf Bestellung 6691 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD6B60M1 | AOS | Транзистор: IGBT; 600В; 6А; 28Вт; TO252 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD6B60M1 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 6A; 28W; TO252; Eoff: 0.09mJ; Eon: 0.12mJ Type of transistor: IGBT Power dissipation: 28W Case: TO252 Mounting: SMD Gate charge: 14nC Turn-off switching energy: 0.09mJ Turn-on switching energy: 0.12mJ Collector-emitter voltage: 600V Pulsed collector current: 18A Turn-on time: 20ns Kind of package: reel; tape Turn-off time: 158ns Gate-emitter voltage: ±30V Collector-emitter saturation voltage: 1.7V Collector current: 6A | auf Bestellung 1517 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD6B65MQ1E | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 12A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 81 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 6A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: 9ns/91ns Switching Energy: 110µJ (on), 80µJ (off) Test Condition: 400V, 6A, 50Ohm, 15V Gate Charge: 13.5 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 18 A Power - Max: 96 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD6B65MQ1E | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 6A; 38W; TO252 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 6A Power dissipation: 38W Case: TO252 Gate-emitter voltage: ±20V Pulsed collector current: 18A Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD6N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 5.3A 3-Pin(2+Tab) DPAK | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD6N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 5.3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD6N50 | AOS | MOSFET N-CH 500V 5.3A TO252 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD6N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 5.3A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD780A70 | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 780mOhm @ 1.4A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 100 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD7B65M3 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 7A; 28W; TO252; Eoff: 0.099mJ; Eon: 0.108mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 7A Power dissipation: 28W Case: TO252 Gate-emitter voltage: ±30V Pulsed collector current: 21A Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Collector-emitter saturation voltage: 1.87V Turn-off switching energy: 0.099mJ Turn-on switching energy: 0.108mJ Turn-on time: 21ns Turn-off time: 136ns | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD7B65M3 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 14A TO-252 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD7N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 7A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD7N60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 7A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 3.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD7N60 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 178W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 178W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: SMD Kind of channel: enhancement Gate charge: 24nC | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD7N65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD7N65 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 7A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| AOD7N65 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.3A; 178W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.3A Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.56Ω Mounting: SMD Gate charge: 19.6nC Kind of channel: enhancement Power dissipation: 178W | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| AOD7N65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOD7N65 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |