Produkte > DMG
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMG4712SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 11.2A 8SOP Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 45.7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.55W (Ta) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.2A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 2296 pF @ 15 V | auf Bestellung 443 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4712SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 11.2A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 2296 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 45.7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.55W (Ta) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.2A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 443 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4712SSS-13 | Diodes Incorporated | MOSFET MOSFET N-CHANNEL | auf Bestellung 1759 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4712SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 11.2A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 2296 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 45.7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.55W (Ta) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 14mOhm @ 11.2A, 10V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4800LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.44A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.44A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.47 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LFG-7 | Diodes Incorporated | MOSFETs ENHANCE MODE MOSFET 30V/4.82 - 7.44A | auf Bestellung 35972 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LFG-7 | DIODES INC. | Description: DIODES INC. - DMG4800LFG-7 - Leistungs-MOSFET, n-Kanal, 30 V, 7.44 A, 0.011 ohm, DFN3030, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 7.44A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 940mW Bauform - Transistor: DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LFG-7 | Diodes Zetex | Trans MOSFET N-CH 30V 7.44A 8-Pin DFN EP T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LFG-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 7.44A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.44A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.47 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V | auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LFG-7 | DIODES INC. | Description: DIODES INC. - DMG4800LFG-7 - Leistungs-MOSFET, n-Kanal, 30 V, 7.44 A, 0.011 ohm, DFN3030, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 7.44A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 940mW Bauform - Transistor: DFN3030 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 1.71W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V | auf Bestellung 35006 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LK3-13 | DIODES INC. | Description: DIODES INC. - DMG4800LK3-13 - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.012 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 1.71W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.012ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1782 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LK3-13 | Diodes Incorporated | MOSFETs ENHANCE MODE MOSFET N Chan 30V/6.5-10.0A | auf Bestellung 8176 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 10A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 1.71W (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 10 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LK3-13 | DIODES INC. | Description: DIODES INC. - DMG4800LK3-13 - Leistungs-MOSFET, n-Kanal, 30 V, 10 A, 0.012 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 1.71W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.012ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1782 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LK3-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 27500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4800LSD-13 | Diodes Incorporated | MOSFETs Dual N-Ch 30V VDSS 25 Vgss 42A IDM | auf Bestellung 5572 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LSD-13 | DIODES INC. | Description: DIODES INC. - DMG4800LSD-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.5 A, 7.5 A, 0.012 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.012ohm Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.012ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) | auf Bestellung 594 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 112500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.17W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 6070 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 666 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.4A; 1.5W; SO8 Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET x2 Mounting: SMD Case: SO8 On-state resistance: 22mΩ Power dissipation: 1.5W Drain current: 8.4A Gate-source voltage: ±25V Drain-source voltage: 30V Kind of package: 13 inch reel; tape | auf Bestellung 443 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 112500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | DIODES INC. | Description: DIODES INC. - DMG4800LSD-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 7.5 A, 7.5 A, 0.012 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.012ohm Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.012ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 75000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R | auf Bestellung 666 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 7.5A Automotive AEC-Q101 8-Pin SO T/R | auf Bestellung 120000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4800LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.5A 8SOP Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.17W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 8-SOP | auf Bestellung 121900 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LSDQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V SO-8 T&R 2.5K | auf Bestellung 5913 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4800LSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 7.5A 8SOP Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.56nC @ 5V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 798pF @ 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.17W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount | auf Bestellung 120000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4812SSS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS | auf Bestellung 4960 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4812SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 1.54W (Ta) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4812SSS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 8A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1849 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 1.54W (Ta) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 15mOhm @ 10.7A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4822SSD | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4822SSD | ams OSRAM | ams OSRAM | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4822SSD-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40 1V-40V,SO-8,2.5K | auf Bestellung 5157 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 62500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 52500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 62500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSD-13 | DIODES INC. | Description: DIODES INC. - DMG4822SSD-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.0134 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0134ohm Verlustleistung, p-Kanal: 1.42W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0134ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.42W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2249 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2134 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active | auf Bestellung 52614 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSD-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R | auf Bestellung 2134 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSD-13 | DIODES INC. | Description: DIODES INC. - DMG4822SSD-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.0134 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0134ohm Verlustleistung, p-Kanal: 1.42W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0134ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.42W Betriebstemperatur, max.: 150°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2249 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R Automotive AEC-Q101 | auf Bestellung 575000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSDQ-13 | DIODES INC. | Description: DIODES INC. - DMG4822SSDQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.016 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.42W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.42W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2443 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10A 8SO Part Status: Active Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.42W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | auf Bestellung 582500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4822SSDQ-13 | Diodes Zetex | Trans MOSFET N-CH 30V 10A 8-Pin SO T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4822SSDQ-13 | DIODES INC. | Description: DIODES INC. - DMG4822SSDQ-13 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 10 A, 10 A, 0.016 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 10A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.42W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.42W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2443 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4822SSDQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40V | auf Bestellung 2327 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG4822SSDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 10A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.42W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount | auf Bestellung 589853 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMG48270C043_04WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 16MBFLASH; RGB; 300cd/m2 Interface: 18bit RGB; CMOS/TTL; RS232; SD; UART Supply voltage: 4.5...5.5V DC Memory: 16MB FLASH Operating temperature: -10...60°C Colour: RGB Kind of controller: T5L0 Touchpad: none Window dimensions (H x W): 95.04x53.86mm Kind of display: graphical; matrix TN Display resolution: 480x272 Luminosity: 300cd/m2 Connector pinout layout: 1x10 Dimensions: 121.92x73.15x13.8mm Connection: 10pin; SD No. of colours: 262k Illumination: LED Type of display: TFT Related items: HDL662B Screen size: 4.3" | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG48270C043_04WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 16MBFLASH; RGB; 250cd/m2 Supply voltage: 4.5...5.5V DC Interface: 18bit RGB; CMOS/TTL; I2C; RS232; SD; UART Dimensions: 121.92x73.15x15.6mm Connection: 10pin; SD Screen size: 4.3" Luminosity: 250cd/m2 Display resolution: 480x272 No. of colours: 262k Connector pinout layout: 1x10 Memory: 16MB FLASH Touchpad: capacitive Kind of display: graphical; matrix TN Related items: HDL662B Illumination: LED Colour: RGB Kind of controller: T5L0 Type of display: TFT Operating temperature: -10...60°C Window dimensions (H x W): 95.04x53.86mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG48270C043_04WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 16MBFLASH; RGB; 200cd/m2 Interface: 18bit RGB; CMOS/TTL; RS232; SD; UART Supply voltage: 4.5...5.5V DC Memory: 16MB FLASH Operating temperature: -10...60°C Colour: RGB Kind of controller: T5L0 Touchpad: resistance Window dimensions (H x W): 95.04x53.86mm Kind of display: graphical; matrix TN Display resolution: 480x272 Luminosity: 200cd/m2 Connector pinout layout: 1x10 Dimensions: 121.92x73.15x15.3mm Connection: 10pin; SD No. of colours: 262k Illumination: LED Type of display: TFT Related items: HDL662B Screen size: 4.3" | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG48270C043_05WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 8MBFLASH; RGB; 300cd/m2 Interface: 18bit RGB; CMOS/TTL; RS232; SD; UART Supply voltage: 4.5...5.5V DC Memory: 8MB FLASH Operating temperature: -20...70°C Colour: RGB Kind of controller: T5L0 Touchpad: none Window dimensions (H x W): 95.04x53.86mm Kind of display: graphical; matrix TN Display resolution: 480x272 Luminosity: 300cd/m2 Connector pinout layout: 1x10 Dimensions: 121.92x73.15x13.8mm Connection: 10pin; SD No. of colours: 262k Illumination: LED Type of display: TFT Related items: HDL662B Screen size: 4.3" | auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG48270C043_05WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 8MBFLASH; RGB; 250cd/m2 Supply voltage: 4.5...5.5V DC Interface: 18bit RGB; CMOS/TTL; I2C; RS232; SD; UART Dimensions: 121.92x73.15x15.6mm Connection: 10pin; SD Screen size: 4.3" Luminosity: 250cd/m2 Display resolution: 480x272 No. of colours: 262k Connector pinout layout: 1x10 Memory: 8MB FLASH Touchpad: capacitive Kind of display: graphical; matrix TN Related items: HDL662B Illumination: LED Colour: RGB Kind of controller: T5L0 Type of display: TFT Operating temperature: -20...70°C Window dimensions (H x W): 95.04x53.86mm | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG48270C043_05WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 4.3"; 480x272; Illumin: LED; 8MBFLASH; RGB; 250cd/m2 Interface: 18bit RGB; CMOS/TTL; RS232; SD; UART Supply voltage: 4.5...5.5V DC Memory: 8MB FLASH Operating temperature: -20...70°C Colour: RGB Kind of controller: T5L0 Touchpad: resistance Window dimensions (H x W): 95.04x53.86mm Kind of display: graphical; matrix TN Display resolution: 480x272 Luminosity: 250cd/m2 Connector pinout layout: 1x10 Dimensions: 121.92x73.15x13.8mm Connection: 10pin; SD No. of colours: 262k Illumination: LED Type of display: TFT Related items: HDL662B Screen size: 4.3" | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG48320C035_03WN | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 3.5"; 320x480; Illumin: LED; 16MBFLASH; RGB; 300cd/m2 Connection: 10pin; SD Supply voltage: 4.5...5.5V DC Type of display: TFT Related items: HDL662B Screen size: 3.5" Colour: RGB Kind of controller: T5L1 Touchpad: none Operating temperature: -20...70°C Window dimensions (H x W): 49x73.4mm Kind of display: graphical; matrix IPS Display resolution: 320x480 Luminosity: 300cd/m2 Memory: 16MB FLASH Connector pinout layout: 1x10 Dimensions: 61.1x103.3x10.5mm Interface: 24bit RGB; CMOS/TTL; SD; UART No. of colours: 16.7M Illumination: LED | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG48320C035_03WTC | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 3.5"; 320x480; Illumin: LED; 16MBFLASH; RGB; 250cd/m2 Interface: 24bit RGB; CMOS/TTL; I2C; SD; UART Supply voltage: 4.5...5.5V DC Memory: 16MB FLASH Operating temperature: -20...70°C Colour: RGB Kind of controller: T5L1 Touchpad: capacitive Window dimensions (H x W): 49x73.4mm Kind of display: graphical; matrix IPS Display resolution: 320x480 Luminosity: 250cd/m2 Connector pinout layout: 1x10 Dimensions: 61.1x103.3x12.3mm Connection: 10pin; SD No. of colours: 16.7M Illumination: LED Type of display: TFT Related items: HDL662B Screen size: 3.5" | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG48320C035_03WTR | Dwin Technology | Category: Intelligent displays modules Description: Display: TFT; 3.5"; 320x480; Illumin: LED; 16MBFLASH; RGB; 250cd/m2 Interface: 24bit RGB; CMOS/TTL; SD; UART Supply voltage: 4.5...5.5V DC Memory: 16MB FLASH Operating temperature: -20...70°C Colour: RGB Kind of controller: T5L1 Touchpad: resistance Window dimensions (H x W): 49x73.4mm Kind of display: graphical; matrix IPS Display resolution: 320x480 Luminosity: 250cd/m2 Connector pinout layout: 1x10 Dimensions: 61.1x103.3x12.1mm Connection: 10pin; SD No. of colours: 16.7M Illumination: LED Type of display: TFT Related items: HDL662B Screen size: 3.5" | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMG4932LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 9.5A 8SO Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9.5A Drain to Source Voltage (Vdss): 30V Power - Max: 1.19W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4932LSD-13 | Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4932LSD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 9.5A 8SO Power - Max: 1.19W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Obsolete Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.4V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1932pF @ 15V Current - Continuous Drain (Id) @ 25°C: 9.5A Drain to Source Voltage (Vdss): 30V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4N60SCT | Diodes Incorporated | Description: MOSFET N-CH 600V 4.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Power Dissipation (Max): 113W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4N60SCT | Diodes Incorporated | MOSFET MOSFET BVDSS: 501V-650V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4N60SJ3 | Diodes Incorporated | Description: MOSFET N-CH 600V 3A TO251 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-251 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4N60SJ3 | Diodes Incorporated | MOSFET MOSFET BVDSS: 651V-800V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4N60SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 600V 3.7A TO252 T&R Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V Power Dissipation (Max): 48W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4N60SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 600V 3.7A TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V Power Dissipation (Max): 48W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4N60SK3-13 | Diodes Incorporated | MOSFET 600V N-Ch Enh Mode 2.3Ohm 10V 3.7A | auf Bestellung 2477 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4N65CT | Diodes Incorporated | MOSFET N-CH MOSFET 650V 4A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4N65CT | Diodes Incorporated | Description: MOSFET N CH 650V 4A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.19W (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4N65CTI | Diodes Incorporated | MOSFET N-CH MOSFET 650V 4A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG4N65CTI | Diodes Incorporated | Description: MOSFET N-CH 650V 4A ITO220AB Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: ITO-220AB Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 8.35W (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Tube | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG504010R | Panasonic Industry | Description: TRANS NPN/PNP 50V 0.1A SMINI6-F3 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V Frequency - Transition: 150MHz Supplier Device Package: SMini6-F3-B | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG504010R | Panasonic | Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG50401R | PANA | SOT26 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG563010R | PANASONIC | SOT353 | auf Bestellung 4630 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG563010R | Panasonic | Bipolar Transistors - Pre-Biased COMP TRANS W/BLT IN RES FLT LD 2.0x2.1mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG563010R | Panasonic Industry | Description: TRANS PREBIAS 1NPN 1PNP SMINI5 Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMini5-F3-B | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG563020R | Panasonic Industry | Description: TRANS PREBIAS 1NPN 1PNP SMINI5 Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Flat Leads Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SMini5-F3-B | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG563020R | Panasonic | Bipolar Transistors - Pre-Biased COMP TRANS W/BLT IN RES FLT LD 2.0x2.1mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG563H10R | Panasonic | Bipolar Transistors - Pre-Biased COMP TRANS W/BLT IN RES FLT LD 2.0x2.1mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG563H10R | Panasonic Industry | Description: TRANS PREBIAS 1NPN 1PNP SMINI5 Supplier Device Package: SMini5-F3-B Resistor - Emitter Base (R2): 47kOhms, 10kOhms Resistor - Base (R1): 47kOhms, 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Leads Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG563H40R | Panasonic | Bipolar Transistors - Pre-Biased COMP TRANS W/BLT IN RES FLT LD 2.0x2.1mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG563H40R | Panasonic Electronic Components | Description: TRANS PREBIAS NPN/PNP SMINI5 Packaging: Tape & Reel (TR) Package / Case: 5-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V / 20 @ 5mA, 10V Resistor - Base (R1): 10kOhms, 510Ohms Resistor - Emitter Base (R2): 10kOhms, 5.1kOhms Supplier Device Package: SMini5-F3-B Part Status: Discontinued at Digi-Key | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG563H50R | Panasonic Industry | Description: TRANS PREBIAS 1NPN 1PNP SMINI5 Supplier Device Package: SMini5-F3-B Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms, 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Leads Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG563H50R | Panasonic | Bipolar Transistors - Pre-Biased COMP TRANS W/BLT IN RES FLT LD 2.0x2.1mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG563H50R | PANASONIC | SOT25/SOT353 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG564010R | Panasonic | Bipolar Transistors - BJT Composite Transistor w/ Built n Resistor | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG564010R | Panasonic Industry | Description: TRANS PREBIAS 1NPN 1PNP SMINI6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SMini6-F3-B | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG564020R | PANASONIC | SOT26/SOT363 | auf Bestellung 2977 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMG564030R | Panasonic Industry | Description: TRANS PREBIAS 1NPN 1PNP SMINI6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SMini6-F3-B | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |