Produkte > DMP
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMP2067LVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A TSOT26 Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) | auf Bestellung 231000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2067LVTQ-13 | Diodes Zetex | MOSFET BVDSS: 8V24V TSOT26 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2067LVTQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V TSOT26 T&R Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Grade: Automotive Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2067LVTQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V TSOT26 T&R Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Grade: Automotive Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2067LVTQ-7 | Diodes Zetex | MOSFET BVDSS: 8V24V TSOT26 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2068UFY4-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V X2-DFN2015-3 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2068UFY4Q-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V X2-DFN2015-3 T&R 3K | auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2069UFY4-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.5A DFN2015H4-3 Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: DFN2015H4-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 530mW (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) | auf Bestellung 206290 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2069UFY4-7 | DIODES INC. | Description: DIODES INC. - DMP2069UFY4-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.5 A, 0.036 ohm, X2-DFN2015, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 530mW Bauform - Transistor: X2-DFN2015 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2069UFY4-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.5A DFN2015H4-3 Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: DFN2015H4-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 530mW (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) | auf Bestellung 204000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2069UFY4-7 | DIODES INC. | Description: DIODES INC. - DMP2069UFY4-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.5 A, 0.036 ohm, X2-DFN2015, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 550mV Verlustleistung: 530mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: X2-DFN2015 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.036ohm | auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2069UFY4-7 | Diodes Incorporated | MOSFETs MOSFET P-CHAN. | auf Bestellung 23980 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2069UFY4Q-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X2-DFN2015- Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Grade: Automotive Supplier Device Package: X2-DFN2015-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 530mW Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XDFN Packaging: Tape & Reel (TR) | auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2069UFY4Q-7 | DIODES INC. | Description: DIODES INC. - DMP2069UFY4Q-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.5 A, 0.036 ohm, X2-DFN2015, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 530mW Bauform - Transistor: X2-DFN2015 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2069UFY4Q-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X2-DFN2015- Package / Case: 3-XDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Grade: Automotive Supplier Device Package: X2-DFN2015-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 530mW Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount | auf Bestellung 35975 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2069UFY4Q-7 | DIODES INC. | Description: DIODES INC. - DMP2069UFY4Q-7 - Leistungs-MOSFET, p-Kanal, 20 V, 2.5 A, 0.036 ohm, X2-DFN2015, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 550mV euEccn: NLR Verlustleistung: 530mW Bauform - Transistor: X2-DFN2015 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2070U-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V Power Dissipation (Max): 830mW Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2070U-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT23 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2070U-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V Power Dissipation (Max): 830mW Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2070U-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT23 T&R 3K | auf Bestellung 4898 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2070U-7 | DIODES INC. | Description: DIODES INC. - DMP2070U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.6 A, 0.037 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 950mV Verlustleistung: 1.4W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.037ohm | auf Bestellung 1265 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2070U-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 830mW Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 | auf Bestellung 828 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2070U-7 | DIODES INC. | Description: DIODES INC. - DMP2070U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.6 A, 0.037 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 950mV Verlustleistung: 1.4W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.037ohm | auf Bestellung 1265 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2070U-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 830mW Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2070U-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -20A; 1.4W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -20A Drain-source voltage: -20V Drain current: -3.7A Gate charge: 17.8nC On-state resistance: 74mΩ Power dissipation: 1.4W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2070UCB6-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 U-WLB1015-6 T&R 3K | auf Bestellung 12605 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2070UCB6-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.5A U-WLB1510-6 Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 1A, 4.5V Power Dissipation (Max): 920mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-WLB1510-6 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2070UFY4-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X2-DFN2015-3 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2070UFY4Q-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X2-DFN2015-3 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2070UQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT23 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2070UQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V Power Dissipation (Max): 830mW Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2070UQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V SOT23 T&R 3K | auf Bestellung 5671 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2070UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Power Dissipation (Max): 830mW Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Grade: Automotive Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 950mV @ 250µA | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2070UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Grade: Automotive Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 830mW Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 6981 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2075UFDB-13 | Diodes Zetex | Trans MOSFET P-CH 20V 3.8A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2075UFDB-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | auf Bestellung 370000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2075UFDB-13 | Diodes Zetex | Trans MOSFET P-CH 20V 3.8A 6-Pin UDFN EP T/R | auf Bestellung 340000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2075UFDB-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2075UFDB-7 | Diodes INC. | Транзистор польовий 2P, Udss, В = 20, Id = 3,8 А, Ciss, пФ @ Uds, В = 642 @ 10, Qg, нКл = 8,8, Rds = 75 мОм, Ugs(th) = 1,4, Р, Вт = 0,7, Тексп, °C = -55...+150, Тип монт. = SMD,... Транзистори Корпус: UDFN-6 (Exp. Pad) Од. вим: шт Anzahl je Verpackung: 3000 Stücke | verfügbar 200 Stücke: | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2075UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3.8A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2075UFDB-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 70080 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2075UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3.8A 6-Pin UDFN EP T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2075UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.8A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 338774 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2075UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3.8A 6-Pin UDFN EP T/R | auf Bestellung 180000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2075UFDB-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -25A; 1.4W Mounting: SMD Case: U-DFN2020-6 Kind of channel: enhancement Type of transistor: P-MOSFET x2 Polarisation: unipolar Pulsed drain current: -25A Drain-source voltage: -20V Drain current: -3A Gate charge: 15nC On-state resistance: 137mΩ Power dissipation: 1.4W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2075UFDB-7 | Diodes | DMP2075UFDB-7 MOSFET P-CH 20V 3,8A 6UDFN Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2075UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3.8A 6-Pin UDFN EP T/R | auf Bestellung 771000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2075UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3.8A 6-Pin UDFN EP T/R | auf Bestellung 2819 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2075UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 642pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 330000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2075UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3.8A 6-Pin UDFN EP T/R | auf Bestellung 2819 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2075UVT-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 3.8A TSOT26 T&R Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 10 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2075UVT-13 | Diodes Zetex | P-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2075UVT-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2075UVT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2075UVT-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V TSOT26 T&R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2077UCA3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4A X4-DSN1006-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V Power Dissipation (Max): 660mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X4-DSN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2077UCA3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4A X4-DSN1006-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V Power Dissipation (Max): 660mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X4-DSN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V | auf Bestellung 8689 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2077UCA3-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 3251 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2078LCA3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3.4A X4DSN1006-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V Power Dissipation (Max): 810mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X4-DSN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): -12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V | auf Bestellung 77666 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2078LCA3-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.7A; Idm: -13A; 1.4W Kind of package: 7 inch reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: X4-DSN1006-3 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -13A Drain current: -2.7A Gate charge: 1.6nC On-state resistance: 0.6Ω Power dissipation: 1.4W Gate-source voltage: ±12V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2078LCA3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3.4A X4DSN1006-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V Power Dissipation (Max): 810mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X4-DSN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): -12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 10 V | auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2078LCA3-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V X4-DSN1006-3 T&R 10K | auf Bestellung 1825 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2079LCA3-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 6361 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2079LCA3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 3.4A X4DSN1006-3 Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Supplier Device Package: X4-DSN1006-3 (Type B) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 810mW | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2084UCA3-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X4-DSN0607-3 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2088LCP3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.9A X2DSN1006-3 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2088LCP3-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 1966 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2088LCP3-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 2.9A X2DSN1006-3 | auf Bestellung 3196 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2088LCP3-7 | Diodes Zetex | Trans MOSFET P-CH 20V 2.9A 3-Pin X2-DSN T/R | auf Bestellung 579000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2090UFDB-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 790mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2090UFDB-13 | Diodes Zetex | DMP2090UFDB-13 | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2090UFDB-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2090UFDB-7 | DIODES INC. | Description: DIODES INC. - DMP2090UFDB-7 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 3.2 A, 3.2 A, 0.037 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.2A Drain-Source-Durchgangswiderstand, p-Kanal: 0.037ohm Verlustleistung, p-Kanal: 790W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm productTraceability: No Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 790W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2660 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2090UFDB-7 | Diodes Incorporated | Film Capacitors DC-LINK MKP 4 90.0 uF 600 VDC 35x50x57 PCM 52.5 | Produkt ist nicht verfügbar | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2090UFDB-7 | DIODES INC. | Description: DIODES INC. - DMP2090UFDB-7 - Dual-MOSFET, p-Kanal, 20 V, 20 V, 3.2 A, 3.2 A, 0.037 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.2A Drain-Source-Durchgangswiderstand, p-Kanal: 0.037ohm Verlustleistung, p-Kanal: 790W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.037ohm productTraceability: No Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 790W Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2660 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100U | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2100U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2100U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100U-7 | DIODES/ZETEX | Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R DMP2100U-7 DIODES TDMP2100U-7 Diodes Anzahl je Verpackung: 100 Stücke | auf Bestellung 2380 Stücke: Lieferzeit 7-14 Tag (e) |
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| DMP2100U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100U-7 | Diodes Incorporated | Description: MOSFET P CH 20V 4.3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 216 pF @ 15 V | auf Bestellung 19653 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2100U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100U-7 | Diodes Incorporated | MOSFETs 20V P-CH MOSFET | auf Bestellung 508 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2100U-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R | auf Bestellung 315000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100U-7 | Diodes Incorporated | Description: MOSFET P CH 20V 4.3A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 216 pF @ 15 V | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2100UCB9-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3A 9UWLB Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-WLB1515-9 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2100UCB9-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-WLB1515-9 T&R 3K | auf Bestellung 1659 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2100UFU-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 5.7A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2100UFU-13 | Diodes Incorporated | MOSFETs Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2100UFU-7 | Diodes Zetex | Trans MOSFET P-CH 20V 5.7A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2100UFU-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 5.7A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.7A Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2100UFU-7 | Diodes Incorporated | MOSFETs Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W | auf Bestellung 3237 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2100UFU-7 | Diodes Zetex | Dual P-Channel Enhancement Mode MOSFET | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100UFU-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -4.1A; 0.9W; U-DFN2030-6 Polarisation: unipolar Power dissipation: 0.9W Version: ESD Drain current: -4.1A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET x2 Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Case: U-DFN2030-6 On-state resistance: 75mΩ Mounting: SMD | auf Bestellung 1478 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100UFU-7 | Diodes Zetex | Dual P-Channel Enhancement Mode MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100UFU-7 | Diodes | MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2100UQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V SOT23 T&R 3K | auf Bestellung 3437 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2100UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A Automotive 3-Pin SOT-23 T/R | auf Bestellung 396000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2100UQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; 0.8W; SOT23; ESD Polarisation: unipolar Power dissipation: 0.8W Version: ESD Drain current: -3.4A Kind of channel: enhancement Drain-source voltage: -20V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Case: SOT23 On-state resistance: 75mΩ Mounting: SMD | auf Bestellung 2251 Stücke: Lieferzeit 14-21 Tag (e) |
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