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AOK015V65X2ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 200A; 312W
Mounting: THT
Case: TO247-3
Power dissipation: 312W
Gate charge: 152nC
Polarisation: unipolar
Technology: SiC
Drain current: 67A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
Kind of package: tube
On-state resistance: 23mΩ
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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AOK033V120X2Alpha & Omega Semiconductor Inc.Description: 1200V SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
1+35.88 EUR
10+25.99 EUR
25+23.44 EUR
240+19.29 EUR
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AOK033V120X2QAlpha & Omega Semiconductor Inc.Description: 1200V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2908 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 2.8V @ 17.5mA
Power Dissipation (Max): 300W (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 214 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.45 EUR
10+30.31 EUR
25+27.44 EUR
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AOK042A60FDAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 25A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9165 pF @ 100 V
Produkt ist nicht verfügbar
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AOK060V65X2Alpha & Omega Semiconductor Inc.Description: 650V SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
auf Bestellung 240 Stücke:
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2+16.37 EUR
10+11.28 EUR
240+9.47 EUR
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AOK060V75X2QAlpha & Omega Semiconductor Inc.Description: 750V SILICON CARBIDE MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 39.4 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 6A, 15V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 240 Stücke:
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2+18.83 EUR
10+13.08 EUR
240+11.38 EUR
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AOK065A60Alpha & Omega SemiconductorHigh Voltage MOSFETs (500V - 1000V)
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AOK065A60Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 20A (Tc)
Power Dissipation (Max): 8.3W (Ta), 208W (Tc)
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V
Produkt ist nicht verfügbar
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AOK065A60FDAlpha & Omega Semiconductor Inc.Description: AOK065A60FD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 100 V
Produkt ist nicht verfügbar
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AOK065V120X2ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1200V; 40A; 187.5W; TO247
Mounting: THT
Case: TO247
Power dissipation: 187.5W
Gate charge: 155nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: 15V
Kind of package: tube
On-state resistance: 65mΩ
Produkt ist nicht verfügbar
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AOK065V120X2QALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29.6A; Idm: 85A; 187.5W
Mounting: THT
Case: TO247-3
Power dissipation: 187.5W
Gate charge: 62.3nC
Polarisation: unipolar
Technology: SiC
Drain current: 29.6A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: -5...15V
Kind of package: tube
On-state resistance: 90mΩ
Pulsed drain current: 85A
Produkt ist nicht verfügbar
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AOK065V120X2QAlpha & Omega Semiconductor Inc.Description: 1200V SILICON CARBIDE MOSFET
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 187.5W (Tj)
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1716 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 62.3 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +15V, -5V
auf Bestellung 235 Stücke:
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1+30.23 EUR
10+21.42 EUR
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AOK065V65X2Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 40.3A TO247
Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 40.3A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 58.8 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +15V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Power Dissipation (Max): 187.5W (Ta)
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1+25.03 EUR
10+17.55 EUR
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AOK095A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 38A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 378W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 830 Stücke:
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2+12.84 EUR
30+7.37 EUR
120+6.15 EUR
510+5.27 EUR
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AOK095A60FDAlpha & Omega Semiconductor Inc.Description: AOK095A60FD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 100 V
auf Bestellung 220 Stücke:
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2+15.35 EUR
10+10.44 EUR
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AOK10B60DAlpha & Omega Semiconductor Inc.Description: IGBT 600V 20A TO-247
Power - Max: 163 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Part Status: Not For New Designs
Packaging: Tube
Gate Charge: 17.4 nC
Test Condition: 400V, 10A, 30Ohm, 15V
Switching Energy: 260µJ (on), 70µJ (off)
Td (on/off) @ 25°C: 10ns/72ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
Reverse Recovery Time (trr): 105 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar
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AOK10N90Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 900V 10A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 403W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK125A60ALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 100A; 357W; TO247
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247
Kind of package: tube
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 0.125Ω
Gate-source voltage: ±20V
Drain current: 28A
Pulsed drain current: 100A
Power dissipation: 357W
Drain-source voltage: 600V
Kind of channel: enhancement
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AOK125A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V
auf Bestellung 20 Stücke:
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2+11.85 EUR
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AOK15B60DAlpha & Omega Semiconductor Inc.Description: IGBT 600V 30A TO-247
Power - Max: 167 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 30 A
Gate Charge: 25.4 nC
Test Condition: 400V, 15A, 20Ohm, 15V
Switching Energy: 510µJ (on), 110µJ (off)
Td (on/off) @ 25°C: 23ns/74ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A
Reverse Recovery Time (trr): 196 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK15B60DALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 83.3W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 83.3W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
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AOK160A60Alpha & Omega SemiconductorN Channel Power Transistor
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AOK160A60Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 24A TO247
auf Bestellung 240 Stücke:
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3+9.62 EUR
10+8.65 EUR
100+7.08 EUR
Mindestbestellmenge: 3 Stücke
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AOK18N65LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 650V 18A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK20120XSDAlpha & Omega Semiconductor Inc.Description: DIODE ARRAY SIC 1200V 31A TO-247
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io) (per Diode): 31A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 230 Stücke:
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2+20.75 EUR
10+14.97 EUR
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AOK20B120D1Alpha & Omega Semiconductor Inc.Description: IGBT 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/152ns
Switching Energy: 940µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 67.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 340 W
Produkt ist nicht verfügbar
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AOK20B120E1Alpha & Omega Semiconductor Inc.Description: IGBT 1200V 20A TO247
Power - Max: 333 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 60.5 nC
Test Condition: 600V, 20A, 15Ohm, 15V
Switching Energy: 830µJ (off)
Td (on/off) @ 25°C: -/134ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK20B120E2Alpha & Omega Semiconductor Inc.Description: IGBT 1200V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/123ns
Switching Energy: 820µJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 53.5 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 250 W
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AOK20B135D1Alpha & Omega Semiconductor Inc.Description: IGBT 1350V 40A TO-247
Power - Max: 340 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 40 A
Part Status: Not For New Designs
Gate Charge: 66 nC
Test Condition: 600V, 20A, 15Ohm, 15V
Switching Energy: 1.05mJ (off)
Td (on/off) @ 25°C: -/156ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 158 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.03 EUR
30+5.64 EUR
120+4.68 EUR
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AOK20B135D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 20A; 170W; TO247; 1.05mJ
Turn-off switching energy: 1.05mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 170W
Gate charge: 66nC
Pulsed collector current: 80A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
Turn-off time: 480ns
Gate-emitter voltage: ±20V
Collector-emitter saturation voltage: 1.57V
Collector current: 20A
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.18 EUR
16+5.57 EUR
18+4.91 EUR
90+4.4 EUR
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AOK20B135E1Alpha & Omega Semiconductor Inc.Description: IGBT 1350V 20A 340W TO247
Power - Max: 250 W
Current - Collector Pulsed (Icm): 80 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 40 A
Part Status: Not For New Designs
Gate Charge: 58 nC
Test Condition: 600V, 20A, 15Ohm, 15V
Switching Energy: 800µJ (off)
Td (on/off) @ 25°C: -/134ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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AOK20B60D1Alpha & Omega Semiconductor Inc.Description: IGBT 600V 40A 180W TO247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 167 W
Current - Collector Pulsed (Icm): 74 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 40 A
Part Status: Not For New Designs
Gate Charge: 24.6 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 760µJ (on), 180µJ (off)
Td (on/off) @ 25°C: 20ns/66ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Reverse Recovery Time (trr): 107 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
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AOK20B65M1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 20A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 322 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/122ns
Switching Energy: 470µJ (on), 270µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 46 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 227 W
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AOK20B65M2AOSIGBT 650V 40A TO-247 Транзистори
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AOK20B65M2Alpha & Omega Semiconductor Inc.Description: IGBT 650V 40A TO-247
Power - Max: 227 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 40 A
Part Status: Active
Gate Charge: 46 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 580µJ (on), 280µJ (off)
Td (on/off) @ 25°C: 26ns/123ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 20A
Reverse Recovery Time (trr): 292 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 73 Stücke:
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3+8.73 EUR
30+4.86 EUR
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AOK20N60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 10A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
auf Bestellung 74 Stücke:
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2+11 EUR
30+6.2 EUR
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AOK20N60LAOSMOSFET N-CH 600V 20A TO247 Транзистори
Produkt ist nicht verfügbar
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AOK20S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247
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AOK20S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
Power Dissipation (Max): 266W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V
Produkt ist nicht verfügbar
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AOK22N50LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 11A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 25 V
Produkt ist nicht verfügbar
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AOK2500LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 150V 14A/180A TO247
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 500W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V
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AOK27S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 27A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V
Produkt ist nicht verfügbar
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AOK29S50LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 500V 29A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V
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AOK29S50LAlpha & Omega SemiconductorTrans MOSFET N-CH 500V 29A 3-Pin(3+Tab) TO-247 Tube
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AOK30B120D2ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 170W; TO247; 1.28mJ
Collector current: 30A
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Turn-off time: 340ns
Turn-off switching energy: 1.28mJ
Collector-emitter saturation voltage: 1.77V
Power dissipation: 170W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 67nC
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.44 EUR
15+5.78 EUR
17+5.12 EUR
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AOK30B120D2Alpha & Omega Semiconductor Inc.Description: IGBT 1200V 30A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/115ns
Switching Energy: 1.28mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 340 W
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AOK30B135C1Alpha & Omega Semiconductor Inc.Description: IGBT 30A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: -/110ns
Switching Energy: 1.45mJ (off)
Test Condition: 600V, 30A, 10Ohm, 15V
Gate Charge: 65 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 288 W
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AOK30B135C1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 144W; TO247
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 144W
Gate charge: 65nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
Gate-emitter voltage: ±30V
Collector current: 30A
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AOK30B135D2Alpha & Omega Semiconductor Inc.Description: IGBT 1350V 30A TO-247
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AOK30B135W1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 170W; TO247; 1.47mJ
Turn-off switching energy: 1.47mJ
Mounting: THT
Collector-emitter voltage: 1.35kV
Power dissipation: 170W
Gate charge: 62nC
Pulsed collector current: 120A
Type of transistor: IGBT
Kind of package: tube
Case: TO247
Turn-off time: 362ns
Gate-emitter voltage: ±30V
Collector-emitter saturation voltage: 1.8V
Collector current: 30A
auf Bestellung 164 Stücke:
Lieferzeit 14-21 Tag (e)
16+5.33 EUR
19+4.7 EUR
21+4.22 EUR
90+3.96 EUR
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AOK30B135W1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 1350V 60A 340W 3-Pin(3+Tab) TO-247 Tube
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AOK30B135W1Alpha & Omega Semiconductor Inc.Description: IGBT 1350V 60A TO-247
Power - Max: 340 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 62 nC
Test Condition: 600V, 30A, 10Ohm, 15V
Switching Energy: 1.47mJ (off)
Td (on/off) @ 25°C: -/129ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 199 Stücke:
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2+11.3 EUR
30+6.41 EUR
120+5.33 EUR
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AOK30B135W1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 1350V 60A 340W 3-Pin(3+Tab) TO-247 Tube
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AOK30B60DAlpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 60A 278W 3-Pin(3+Tab) TO-247 Tube
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AOK30B60DAlpha & Omega Semiconductor Inc.Description: IGBT 600V 60A TO-247
Power - Max: 278 W
Current - Collector Pulsed (Icm): 128 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 47 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 1.18mJ (on), 200µJ (off)
Td (on/off) @ 25°C: 26ns/71ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 137 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK30B60D1AOSIGBT 600V 60A 208W TO247 Транзистори
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AOK30B60D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 60A 208W 3-Pin(3+Tab) TO-247 Tube
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AOK30B60D1Alpha & Omega Semiconductor Inc.Description: IGBT 600V 60A 208W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 26A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 20ns/58ns
Switching Energy: 1.1mJ (on), 240µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 34 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 208 W
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AOK30B65M2Alpha & Omega Semiconductor Inc.Description: IGBT 650V 60A TO-247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Active
Gate Charge: 63 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 1.02mJ (on), 410µJ (off)
Td (on/off) @ 25°C: 34ns/138ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Reverse Recovery Time (trr): 339 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 121 Stücke:
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3+9.26 EUR
30+5.16 EUR
120+4.26 EUR
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AOK40B120H1AOSIGBT; 1,2кВ; 40А; 250Вт; TO247; Eвыкл: 1,24мДж Транзистори
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AOK40B120H1
Produktcode: 175217
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > Transistoren IGBT, Leistungsmodule
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AOK40B120H1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247; Eoff: 1.24mJ; Eon: 2.45mJ
Mounting: THT
Turn-on time: 133ns
Turn-off time: 375ns
Turn-off switching energy: 1.24mJ
Turn-on switching energy: 2.45mJ
Kind of package: tube
Case: TO247
Collector-emitter saturation voltage: 1.8V
Gate-emitter voltage: ±30V
Collector current: 40A
Power dissipation: 250W
Pulsed collector current: 120A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Gate charge: 128nC
Produkt ist nicht verfügbar
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AOK40B120M1AOSIGBT Chip N-CH 1200V 80A 600000mW TO-247 Транзистори
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AOK40B120M1Alpha & Omega Semiconductor Inc.Description: IGBT 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 340 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 90ns/226ns
Switching Energy: 3.87mJ (on), 1.25mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 140 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 600 W
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AOK40B120N1AOSIGBT; 1,2кВ; 40А; TO247 Транзистори
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AOK40B120N1Alpha & Omega SemiconductorAlpha IGBT With Soft and Fast Recovery Anti Parallel Diode
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AOK40B120N1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Gate-emitter voltage: ±30V
Collector current: 40A
Power dissipation: 300W
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Gate charge: 0.1µC
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AOK40B120N1Alpha & Omega Semiconductor Inc.Description: IGBT 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 57ns/146ns
Switching Energy: 3.4mJ (on), 1.4mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 600 W
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AOK40B120P1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Gate-emitter voltage: ±30V
Collector current: 40A
Power dissipation: 300W
Pulsed collector current: 160A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Gate charge: 202nC
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AOK40B120P1Alpha & Omega Semiconductor Inc.Description: IGBT 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 53ns/210ns
Switching Energy: 2.5mJ (on), 1.3mJ (off)
Test Condition: 600V, 40A, 7.5Ohm, 15V
Gate Charge: 202 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 600 W
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AOK40B120P1Alpha & Omega SemiconductorAlpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
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AOK40B60DAlpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 80A 312.5mW 3-Pin(3+Tab) TO-247 Tube
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AOK40B60DAlpha & Omega Semiconductor Inc.Description: IGBT 600V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 138 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 28ns/77ns
Switching Energy: 1.72mJ (on), 300µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 63.5 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 312.5 W
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AOK40B60D1Alpha & Omega Semiconductor Inc.Description: IGBT 600V 80A TO-247
Power - Max: 278 W
Current - Collector Pulsed (Icm): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 45 nC
Test Condition: 400V, 40A, 7.5Ohm, 15V
Switching Energy: 1.55mJ (on), 300µJ (off)
Td (on/off) @ 25°C: 29ns/74ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Reverse Recovery Time (trr): 127 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 92 Stücke:
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3+9.56 EUR
30+5.36 EUR
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AOK40B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ
Mounting: THT
Turn-on time: 53ns
Turn-off time: 102ns
Turn-off switching energy: 0.3mJ
Turn-on switching energy: 1.55mJ
Kind of package: tube
Case: TO247
Collector-emitter saturation voltage: 1.85V
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 111W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Type of transistor: IGBT
Gate charge: 45nC
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AOK40B65GQ1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 113W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Gate-emitter voltage: ±30V
Collector current: 40A
Power dissipation: 113W
Pulsed collector current: 120A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Gate charge: 86nC
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AOK40B65H1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247 Tube
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AOK40B65H1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.46mJ; Eon: 1.27mJ
Mounting: THT
Turn-on time: 82ns
Turn-off time: 173ns
Turn-off switching energy: 0.46mJ
Turn-on switching energy: 1.27mJ
Kind of package: tube
Case: TO247
Collector-emitter saturation voltage: 1.9V
Gate-emitter voltage: ±30V
Collector current: 40A
Power dissipation: 150W
Pulsed collector current: 120A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Gate charge: 63nC
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
17+5.18 EUR
19+4.58 EUR
21+4.12 EUR
90+3.84 EUR
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AOK40B65H1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 80A TO-247
Power - Max: 300 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Active
Gate Charge: 63 nC
Test Condition: 400V, 40A, 7.5Ohm, 15V
Switching Energy: 1.27mJ (on), 460µJ (off)
Td (on/off) @ 25°C: 41ns/130ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Reverse Recovery Time (trr): 346 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 40 Stücke:
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3+9.42 EUR
10+6.26 EUR
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AOK40B65H2ALALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 105W; TO247; Eoff: 0.54mJ; Eon: 1.17mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 152ns
Collector-emitter saturation voltage: 2.05V
Turn-off switching energy: 0.54mJ
Turn-on switching energy: 1.17mJ
auf Bestellung 182 Stücke:
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28+3.05 EUR
34+2.57 EUR
38+2.28 EUR
40+2.13 EUR
60+2.07 EUR
90+2.05 EUR
150+2.01 EUR
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AOK40B65H2ALAlpha & Omega Semiconductor Inc.Description: IGBT 650V 80A TO-247
Power - Max: 260 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Gate Charge: 61 nC
Test Condition: 600V, 40A, 7.5Ohm, 15V
Switching Energy: 1.17mJ (on), 540µJ (off)
Td (on/off) @ 25°C: 30ns/117ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Reverse Recovery Time (trr): 315 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK40B65H2ALAlpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 80A 260W 3-Pin(3+Tab) TO-247 Tube
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AOK40B65H2AL_002Alpha & Omega SemiconductorAOK40B65H2AL_002
auf Bestellung 32640 Stücke:
Lieferzeit 14-21 Tag (e)
240+3.24 EUR
8160+2.93 EUR
16320+2.68 EUR
24480+2.49 EUR
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AOK40B65HQ1Alpha & Omega Semiconductor Inc.Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
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AOK40B65HQ2Alpha & Omega Semiconductor Inc.Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
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AOK40B65HQ2Alpha & Omega SemiconductorAlpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
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AOK40B65HQ3ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 156W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Gate-emitter voltage: ±30V
Collector current: 40A
Power dissipation: 156W
Pulsed collector current: 120A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Gate charge: 74nC
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AOK40B65HQ3Alpha & Omega Semiconductor Inc.Description: IGBT 40A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 106 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 31ns/110ns
Switching Energy: 1.19mJ (on), 380µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 61 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 312 W
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AOK40B65M3ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 150W; TO247; Eoff: 0.5mJ; Eon: 1.3mJ
Mounting: THT
Turn-on time: 80ns
Turn-off time: 175ns
Turn-off switching energy: 0.5mJ
Turn-on switching energy: 1.3mJ
Kind of package: tube
Case: TO247
Collector-emitter saturation voltage: 1.95V
Gate-emitter voltage: ±30V
Collector current: 40A
Power dissipation: 150W
Pulsed collector current: 120A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Gate charge: 59nC
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AOK40B65M3Alpha & Omega Semiconductor Inc.Description: IGBT 650V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 365 ns
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 40A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 40ns/125ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 400V, 40A, 7.5Ohm, 15V
Gate Charge: 59 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
auf Bestellung 183 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.39 EUR
30+5.85 EUR
120+4.86 EUR
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AOK40N30LALPHA & OMEGA SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 25A; TO247
Mounting: THT
Gate charge: 60nC
On-state resistance: 85mΩ
Polarisation: unipolar
Gate-source voltage: ±30V
Drain current: 25A
Type of transistor: N-MOSFET
Case: TO247
Drain-source voltage: 300V
Kind of channel: enhancement
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AOK40N30LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 300V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 20A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: TO-247
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Produkt ist nicht verfügbar
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AOK42S60LAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 600V 39A TO247
Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 417W (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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AOK42S60LAlpha & Omega SemiconductorTrans MOSFET N-CH 600V 39A 3-Pin(3+Tab) TO-247
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AOK50B60D1Alpha & Omega Semiconductor Inc.Description: IGBT 600V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 132 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 26ns/68ns
Switching Energy: 2.37mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 64 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 168 A
Power - Max: 312 W
Produkt ist nicht verfügbar
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AOK50B60D1ALPHA & OMEGA SEMICONDUCTORCategory: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 125W; TO247; Eoff: 0.5mJ; Eon: 2.37mJ
Case: TO247
Gate charge: 64nC
Turn-on time: 98ns
Turn-off time: 104ns
Turn-off switching energy: 0.5mJ
Turn-on switching energy: 2.37mJ
Collector-emitter saturation voltage: 1.85V
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 125W
Pulsed collector current: 168A
Collector-emitter voltage: 600V
Kind of package: tube
Type of transistor: IGBT
Mounting: THT
auf Bestellung 24 Stücke:
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14+6.18 EUR
16+5.45 EUR
18+4.9 EUR
Mindestbestellmenge: 14 Stücke
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AOK50B60D1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 600V 100A 312000mW 3-Pin(3+Tab) TO-247 Tube
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AOK50B65GL1Alpha & Omega Semiconductor Inc.Description: IGBT 50A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 282ns/915ns
Switching Energy: 3.37mJ (on), 1.59mJ (off)
Test Condition: 300V, 50A, 100Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 312 W
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AOK50B65H1Alpha & Omega SemiconductorTrans IGBT Chip N-CH 650V 100A 375W 3-Pin(3+Tab) TO-247 Tube
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AOK50B65H1Alpha & Omega Semiconductor Inc.Description: IGBT 650V 50A TO-247
Power - Max: 375 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Gate Charge: 76 nC
Test Condition: 400V, 50A, 6Ohm, 15V
Switching Energy: 1.92mJ (on), 850µJ (off)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Td (on/off) @ 25°C: 37ns/141ns
Supplier Device Package: TO-247
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Reverse Recovery Time (trr): 261 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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