Produkte > BY2
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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| BY2000 | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 2kV; 3A; Ammo Pack; Ifsm: 100A; DO201; Ir: 5uA Mounting: THT Max. off-state voltage: 2kV Max. load current: 20A Max. forward voltage: 1.1V Load current: 3A Semiconductor structure: single diode Reverse recovery time: 1.5µs Max. forward impulse current: 100A Leakage current: 5µA Kind of package: Ammo Pack Type of diode: rectifying Case: DO201 | auf Bestellung 11427 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY2000 | Diotec Electronics | Rectifier Diode Switching 2KV 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY2000 | Diotec Semiconductor | Rectifier Diode Switching 2KV 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY2000 | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 2kV; 3A; Ammo Pack; Ifsm: 100A; DO201; Ir: 5uA Mounting: THT Max. off-state voltage: 2kV Max. load current: 20A Max. forward voltage: 1.1V Load current: 3A Semiconductor structure: single diode Reverse recovery time: 1.5µs Max. forward impulse current: 100A Leakage current: 5µA Kind of package: Ammo Pack Type of diode: rectifying Case: DO201 Anzahl je Verpackung: 1 Stücke | auf Bestellung 11427 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY2000 | Diotec Electronics | Rectifier Diode Switching 2KV 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY2000 | Diotec Semiconductor | Rectifier Diode Switching 2KV 3A 1500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY2000 | Diotec Semiconductor | Rectifier Diode Switching 2KV 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY2000 | Diotec Semiconductor | Rectifiers Diode, DO-201, 2000V, 3A | auf Bestellung 4978 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY2000 Produktcode: 105894 | Vishay | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden Gehäuse: DO-201 Urev.,V: 2000 V Iausricht.,А: 3 A Монтаж: THT | auf Bestellung 130 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| BY2000 | Diotec Electronics | Rectifier Diode Switching 2KV 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 2927 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY2000 | Diotec Semiconductor | Description: DIODE GEN PURP 2000V 3A DO201 Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | auf Bestellung 2137 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY2000 | Diotec Semiconductor | Rectifier Diode Switching 2KV 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY2000 | Diotec Semiconductor | Rectifier Diode Switching 2KV 3A 1500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY2000 | Diotec Semiconductor | Rectifier Diode Switching 2KV 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY2000 | Diotec Electronics | Rectifier Diode Switching 2KV 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 1100 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY2000 | Diotec Semiconductor | Description: DIODE GEN PURP 2000V 3A DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 2000 V | auf Bestellung 1700 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY2000-CT | Diotec Semiconductor | Description: DIODE GEN PURP 2KV 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 2 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY201 | 95/96/97 | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| BY203-12 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| BY203-12STAP | Vishay Semiconductors | Rectifiers 1200 Volt 0.25 Amp 20 Amp IFSM | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-12STAP | Vishay General Semiconductor - Diodes Division | Description: DIODE AVAL 1.2KV 250MA SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 700 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-12STAP | Vishay | Rectifier Diode Switching 1.2KV 0.25A 300ns 2-Pin SOD-57 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-12STR | Vishay General Semiconductor - Diodes Division | Description: DIODE AVAL 1.2KV 250MA SOD57 Packaging: Tape & Reel (TR) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 700 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-12STR | Vishay | Rectifier Diode Switching 1.2KV 0.25A 300ns 2-Pin SOD-57 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-12STR | Vishay Semiconductors | Rectifiers 1200 Volt 0.25 Amp 20 Amp IFSM | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-16STAP | Vishay | Rectifier Diode Switching 1.6KV 0.25A 300ns 2-Pin SOD-57 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-16STAP | Vishay Semiconductors | Rectifiers 1600 Volt 0.25 Amp 20 Amp IFSM | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-16STAP | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching Kind of package: Ammo Pack Max. forward impulse current: 20A Case: SOD57 Max. forward voltage: 2.4V Leakage current: 2µA Reverse recovery time: 300ns | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-16STAP | Vishay General Semiconductor - Diodes Division | Description: DIODE AVAL 1.6KV 250MA SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1000 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-16STAP | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching Kind of package: Ammo Pack Max. forward impulse current: 20A Case: SOD57 Max. forward voltage: 2.4V Leakage current: 2µA Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-16STR | Vishay General Semiconductor - Diodes Division | Description: DIODE AVAL 1.6KV 250MA SOD57 Packaging: Tape & Reel (TR) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1000 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-16STR | Vishay | Rectifier Diode Switching 1.6KV 0.25A 300ns 2-Pin SOD-57 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-16STR | Vishay Semiconductors | Rectifiers 1600 Volt 0.25 Amp 20 Amp IFSM | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-20S-TR | Vishay | Diode Switching 2KV 0.25A 2-Pin SOD-57 T/R | auf Bestellung 25349 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY203-20S-TR | Vishay | Diode Switching 2KV 0.25A 2-Pin SOD-57 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY203-20S-TR | Vishay | Diode Switching 2KV 0.25A 2-Pin SOD-57 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY203-20S-TR | Vishay | Diode Switching 2KV 0.25A 2-Pin SOD-57 T/R | auf Bestellung 4709 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY203-20S-TR | Vishay | Diode Switching 2KV 0.25A 2-Pin SOD-57 T/R | auf Bestellung 25349 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY203-20STAP Produktcode: 28539 | Vishay | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden Gehäuse: SOD-57 Urev.,V: 2000 Iausricht.,А: 0.25 Beschreibung: Schneller Падіння напруги Vf: 2,4 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-20STAP | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 2KV 250MA SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-20STAP | Vishay Semiconductor | Випрямний ультрашвидкий лавинноподібний діод вивідний; Ur, В = 1 200; Io, А = 0,25; If, A = 0,2; Uf (max), В = 2,4; I, мкА @ Ur, В = 2 @ 1200; trr, нс = 300; Тексп, °С = -55...+150; SOD-57 | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY203-20STAP | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 2kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57 Type of diode: rectifying Case: SOD57 Mounting: THT Kind of package: Ammo Pack Max. forward impulse current: 20A Leakage current: 2µA Features of semiconductor devices: avalanche breakdown effect; fast switching Max. off-state voltage: 2kV Max. forward voltage: 2.4V Load current: 0.25A Semiconductor structure: single diode Reverse recovery time: 300ns | auf Bestellung 6962 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY203-20STAP | Vishay | Diode Switching 2KV 0.25A 2-Pin SOD-57 Ammo | auf Bestellung 1952 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY203-20STAP | Vishay Semiconductors | Rectifiers 2000 Volt 0.25 Amp 20 Amp IFSM | auf Bestellung 62234 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY203-20STAP | Vishay | Diode Switching 2KV 0.25A 2-Pin SOD-57 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-20STAP | VISHAY | Description: VISHAY - BY203-20STAP - Diode mit Standard-Erholzeit, 2 kV, 250 mA, Einfach, 2.4 V, 300 ns, 20 A tariffCode: 85411000 Bauform - Diode: SOD-57 Durchlassstoßstrom: 20A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 Durchlassspannung, max.: 2.4V Sperrverzögerungszeit: 300ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 250mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 2kV Anzahl der Pins: 2Pin(s) Produktpalette: BY203 productTraceability: No Betriebstemperatur, max.: 150°C | auf Bestellung 74147 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY203-20STAP | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 2kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57 Type of diode: rectifying Case: SOD57 Mounting: THT Kind of package: Ammo Pack Max. forward impulse current: 20A Leakage current: 2µA Features of semiconductor devices: avalanche breakdown effect; fast switching Max. off-state voltage: 2kV Max. forward voltage: 2.4V Load current: 0.25A Semiconductor structure: single diode Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke | auf Bestellung 6962 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY203-20STAP | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 2KV 250MA SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1200 V | auf Bestellung 5497 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY203-20STAP | Vishay | Diode Switching 2KV 0.25A 2-Pin SOD-57 Ammo | auf Bestellung 26560 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY203-20STAP | Vishay | Diode Switching 2KV 0.25A 2-Pin SOD-57 Ammo | auf Bestellung 26560 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY203-20STR | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 2KV 250MA SOD57 Packaging: Tape & Reel (TR) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1200 V | auf Bestellung 75000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY203-20STR | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 2KV 250MA SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1200 V | auf Bestellung 86083 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY203-20STR | Vishay | Diode Switching 2KV 0.25A 2-Pin SOD-57 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY203-20STR | Vishay Semiconductors | Rectifiers 2000 Volt 0.25 Amp 20 Amp IFSM | auf Bestellung 3318 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY203-20STR(Diode) Produktcode: 54247 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||||
| BY203/20 Produktcode: 56225 | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden | Produkt ist nicht verfügbar | ||||||||||||||||||
| BY206GP-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 300V 400MA DO204AL Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 400mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 300 V | auf Bestellung 9170 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY206GP-E3/54 | VISHAY | Description: VISHAY - BY206GP-E3/54 - Diode mit Standard-Erholzeit, 350 V, 400 mA, Einfach, 1.5 V, 1 µs, 15 A tariffCode: 85411000 Bauform - Diode: DO-41 (DO-204AL) Durchlassstoßstrom: 15A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.5V Sperrverzögerungszeit: 1µs usEccn: EAR99 Durchschnittlicher Durchlassstrom: 400mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 350V Anzahl der Pins: 2Pin(s) Produktpalette: BY206 productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: Lead (14-Jun-2023) | auf Bestellung 20085 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY206GP-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 300V 400MA DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1 µs Technology: Standard Current - Average Rectified (Io): 400mA Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 2 µA @ 300 V | auf Bestellung 5500 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY206GP-E3/54 | Vishay General Semiconductor | Rectifiers 1.0 Amp 350 Volt | auf Bestellung 5868 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY206GP-E3/73 | Vishay General Semiconductor | Rectifiers 1.0 Amp 350 Volt | auf Bestellung 10144 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY206GP-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 300V 400MA DO204AL | Produkt ist nicht verfügbar | |||||||||||||||||
| BY206GPHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 300V 400MA DO204AL | Produkt ist nicht verfügbar | |||||||||||||||||
| BY206GPHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 300V 400MA DO204AL | Produkt ist nicht verfügbar | |||||||||||||||||
| BY224 | PHILIPS | SIP-4 | auf Bestellung 134 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| BY224 | PHILIPS | auf Bestellung 134 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| BY227MGP-E3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 1.25KV 2A DO204AC | Produkt ist nicht verfügbar | |||||||||||||||||
| BY227MGPHE3/54 | Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 1.25KV 2A DO204AC | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228 Produktcode: 66877 | NXP | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden Gehäuse: SOD-64 Urev.,V: 1500 V Iausricht.,А: 3 A Монтаж: THT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228 | Diotec | BY228G Диод выпрямительный, 1,5кВ, 3А, DO201 | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY228-13TAP | Vishay Semiconductors | Rectifiers 3.0 Amp 1300 Volt 50 Amp IFSM | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-13TAP | Vishay | Rectifier Diode Switching 1KV 3A 20000ns 2-Pin SOD-64 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-13TAP | Vishay | Rectifier Diode Switching 1KV 3A 20000ns 2-Pin SOD-64 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-13TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 1KV 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-13TR | Vishay | Rectifier Diode Switching 1KV 3A 20000ns 2-Pin SOD-64 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-13TR | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 1KV 3A SOD64 Packaging: Tape & Reel (TR) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-13TR | Vishay Semiconductors | Rectifiers 3.0 Amp 1300 Volt 50 Amp IFSM | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-15TAP | Vishay | Diode Switching 1.2KV 3A 2-Pin SOD-64 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-15TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 1.2KV 3A SOD64 Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V | auf Bestellung 2110 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY228-15TAP | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 3A; Ammo Pack; Ifsm: 50A; SOD64; 20us Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD64 Max. forward voltage: 1.5V Leakage current: 140µA Reverse recovery time: 20µs Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-15TAP | Vishay Semiconductors | Rectifiers 3.0 Amp 1500 Volt 50 Amp IFSM | auf Bestellung 20425 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY228-15TAP | Vishay | Diode Switching 1.2KV 3A 2-Pin SOD-64 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-15TAP | Vishay | Diode Switching 1.2KV 3A 2-Pin SOD-64 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-15TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 1.2KV 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY228-15TAP | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 3A; Ammo Pack; Ifsm: 50A; SOD64; 20us Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD64 Max. forward voltage: 1.5V Leakage current: 140µA Reverse recovery time: 20µs | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-15TR | Vishay Semiconductors | Rectifiers 3.0 Amp 1500 Volt 50 Amp IFSM | auf Bestellung 7294 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY228-15TR | Vishay | Diode Switching 1.2KV 3A 2-Pin SOD-64 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-15TR | Vishay | Diode Switching 1.2KV 3A 2-Pin SOD-64 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-15TR | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 1.2KV 3A SOD64 Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V | auf Bestellung 17998 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY228-15TR | Vishay | Diode Switching 1.2KV 3A 2-Pin SOD-64 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228-15TR | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 1.2KV 3A SOD64 Packaging: Tape & Reel (TR) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1200 V | auf Bestellung 17500 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY228G | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 1.5kV; 3A; Ammo Pack; Ifsm: 100A; DO201 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.5kV Load current: 3A Max. load current: 20A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 100A Case: DO201 Max. forward voltage: 1.1V Leakage current: 5µA Reverse recovery time: 1.5µs Anzahl je Verpackung: 1 Stücke | auf Bestellung 3319 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY228G | Diotec Semiconductor | Description: DIODE GEN PURP 1500V 3A DO201 Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228G Produktcode: 117012 | Diotec | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden Gehäuse: DO-201 Urev.,V: 1500 V Iausricht.,А: 3 A Beschreibung: Випрямляючий Монтаж: THT Падіння напруги Vf: 1,3 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228G | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 1.5kV; 3A; Ammo Pack; Ifsm: 100A; DO201 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.5kV Load current: 3A Max. load current: 20A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 100A Case: DO201 Max. forward voltage: 1.1V Leakage current: 5µA Reverse recovery time: 1.5µs | auf Bestellung 3319 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228G | Diotec Electronics | Standard Recovery Rectifiers | auf Bestellung 3995 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228G | Diotec Semiconductor | Випрямний діод вивідний; Io, A = 3; Uзвор, В = 1 500; Uf (max), В = 1,3; If, А = 3; Тексп, °C = -50...+150; I, мкА @ Ur, В = 5 @ 1500; DO-201 | auf Bestellung 140 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228G | Diotec Semiconductor | Rectifiers Diode, DO-201, 1500V, 3A | auf Bestellung 270 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY228G | Diotec Semiconductor | Description: DIODE GEN PURP 1500V 3A DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228G | Diotec Semiconductor | Diode, DO-201, 1500V, 3A | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228GP | Vishay Semiconductors | Rectifiers 2.5A,1500V,SUPER RECT.DO-201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228GP-E3/54 | Vishay | Diode Switching 1.5KV 2.5A 2-Pin DO-201AD T/R | auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228GP-E3/54 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.5kV; 2.5A; Ifsm: 50A; DO201AD; Ufmax: 1.6V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.5kV Load current: 2.5A Max. load current: 10A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Capacitance: 40pF Max. forward impulse current: 50A Case: DO201AD Max. forward voltage: 1.6V Leakage current: 0.2mA Reverse recovery time: 20µs Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228GP-E3/54 | Vishay | Diode Switching 1.5KV 2.5A 2-Pin DO-201AD T/R | auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228GP-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.5KV 2.5A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | auf Bestellung 5600 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY228GP-E3/54 | Vishay | Diode Switching 1.5KV 2.5A 2-Pin DO-201AD T/R | auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY228GP-E3/54 | VISHAY | Description: VISHAY - BY228GP-E3/54 - Diode mit Standard-Erholzeit, 1.5 kV, 2.5 A, Einfach, 1.6 V, 2 µs, 50 A tariffCode: 85411000 Bauform - Diode: DO-201AD Durchlassstoßstrom: 50A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.6V Sperrverzögerungszeit: 2µs usEccn: EAR99 Durchschnittlicher Durchlassstrom: 2.5A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.5kV Anzahl der Pins: 2Pin(s) Produktpalette: SUPERECTIFIER productTraceability: No Betriebstemperatur, max.: 150°C | auf Bestellung 11835 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY228GP-E3/54 | Vishay | Diode Switching 1.5KV 2.5A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228GP-E3/54 | Vishay General Semiconductor | Rectifiers 2.5 Amp 1500 Volt | auf Bestellung 28416 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY228GP-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.5KV 2.5A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | auf Bestellung 6749 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY228GP-E3/54 Produktcode: 155570 | Vishay | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden Gehäuse: DO-201AD Urev.,V: 1500 V Iausricht.,А: 2,5 A Beschreibung: Выпрямительный Монтаж: THT Падіння напруги Vf: 1,6 V | auf Bestellung 475 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| BY228GP-E3/54 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.5kV; 2.5A; Ifsm: 50A; DO201AD; Ufmax: 1.6V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.5kV Load current: 2.5A Max. load current: 10A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated Capacitance: 40pF Max. forward impulse current: 50A Case: DO201AD Max. forward voltage: 1.6V Leakage current: 0.2mA Reverse recovery time: 20µs | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228GP-E3/73 | Vishay | Rectifier Diode Switching 1.5KV 2.5A 20000ns 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228GP-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.5KV 2.5A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | auf Bestellung 964 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY228GP-E3/73 | Vishay General Semiconductor | Rectifiers 2.5A,1500V,SUPER RECT.DO-201AD | auf Bestellung 3192 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY228GP-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.5KV 2.5A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228GPHE3/54 | Vishay | Rectifier Diode Switching 1.5KV 2.5A 20000ns Automotive 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228GPHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GP 1.5KV 2.5A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228TAP | Vishay | Диод БМ SOD-64 U=1500 V I=3 A trr=20000 ns | auf Bestellung 2486 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228TAP | Vishay Semiconductors | Rectifiers 3.0 Amp 1500 Volt 50 Amp IFSM | auf Bestellung 27748 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY228TAP | Vishay | Diode Switching 1.65KV 3A 2-Pin SOD-64 Ammo | auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228TAP | VISHAY | Description: VISHAY - BY228TAP - Diode mit Standard-Erholzeit, 1.65 kV, 3 A, Einfach, 1.5 V, 20 µs, 50 A tariffCode: 85411000 Bauform - Diode: SOD-64 Durchlassstoßstrom: 50A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.5V Sperrverzögerungszeit: 20µs usEccn: EAR99 Durchschnittlicher Durchlassstrom: 3A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.65kV Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 140°C | auf Bestellung 22089 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY228TAP | Vishay | Diode Switching 1.65KV 3A 2-Pin SOD-64 Ammo | auf Bestellung 30779 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228TAP | Vishay | Diode Switching 1.65KV 3A 2-Pin SOD-64 Ammo | auf Bestellung 30779 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY228TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 1.5KV 3A SOD64 Packaging: Tape & Box (TB) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY228TAP | Vishay Semiconductor | Випрямний лавиноподібний діод вивідний; Io, A = 3; Uзвор, В = 1 500; Uf (max), В = 1,5; If, А = 5; trr, нс = 20 000; Тексп, °С = -55...+175; I, мкА @ Ur, В = 5 @ 1500; SOD-64 | auf Bestellung 836 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228TAP | Vishay | Diode Switching 1.65KV 3A 2-Pin SOD-64 Ammo | auf Bestellung 4900 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228TAP Produktcode: 38478 | EIC | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden Gehäuse: SOD-64 Urev.,V: 1500 Iausricht.,А: 3 Beschreibung: Dampfer Diode Монтаж: THT Падіння напруги Vf: 1,5 V | auf Bestellung 42 Stück: Lieferzeit 21-28 Tag (e) |
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| BY228TAP | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.5kV; 3A; Ammo Pack; Ifsm: 50A; SOD64 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.5kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD64 | auf Bestellung 6015 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228TAP | Vishay | Diode Switching 1.65KV 3A 2-Pin SOD-64 Ammo | auf Bestellung 31329 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228TAP | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.5kV; 3A; Ammo Pack; Ifsm: 50A; SOD64 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.5kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect Kind of package: Ammo Pack Max. forward impulse current: 50A Case: SOD64 Anzahl je Verpackung: 1 Stücke | auf Bestellung 6015 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY228TAP | Vishay | Diode Switching 1.65KV 3A 2-Pin SOD-64 Ammo | auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY228TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 1.5KV 3A SOD64 Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | auf Bestellung 538 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY228TR | Vishay | Diode Switching 1.65KV 3A 2-Pin SOD-64 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY228TR | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 1.5KV 3A SOD64 Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | auf Bestellung 12297 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY228TR | Vishay | Diode Switching 1.65KV 3A 2-Pin SOD-64 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY228TR | Vishay General Semiconductor - Diodes Division | Description: DIODE AVALANCHE 1.5KV 3A SOD64 Packaging: Tape & Reel (TR) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 µs Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1500 V | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY228TR | Vishay Semiconductors | Rectifiers 3.0 Amp 1500 Volt 50 Amp IFSM | auf Bestellung 20455 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY228TR | Vishay | Diode Switching 1.65KV 3A 2-Pin SOD-64 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY228TR | Vishay | Rectifier Diode Switching 1.65KV 3A 20000ns 2-Pin SOD-64 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-1000R | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| BY229-200-E3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching `A,200V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-200-E3/45 | Vishay | Rectifier Diode Switching 200V 8A 145ns 2-Pin(2+Tab) TO-220AC Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-200-E3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-200-E3/45 | Vishay Semiconductors | Rectifiers 8.0 Amp 200 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-200HE3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,200V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-200HE3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-400-E3/45 | Vishay Semiconductors | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-400-E3/45 | Vishay | Diode Switching 400V 8A 2-Pin(2+Tab) TO-220AC Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-600 | NXP Semiconductors | Rectifiers RAIL REC-DD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-600 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| BY229-600 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,600V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-600,127 | NXP Semiconductors | Rectifier Diode Switching 600V 8A 135ns 2-Pin(2+Tab) TO-220AC Rail | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-600,127 | NXP USA Inc. | Description: DIODE GEN PURP 500V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 500 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-600-E3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,600V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-600-E3/45 | Vishay | Diode Switching 600V 8A 2-Pin(2+Tab) TO-220AC Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-600-E3/45 | Vishay Semiconductors | Rectifiers 8.0 Amp 600 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-600-E3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-600HE3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,600V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-600HE3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-600HE3/45 | Vishay Semiconductors | Rectifiers 600 Volt 8.0A 145ns Glass Passivated | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-600HE3/45 | Vishay | Rectifier Diode Switching 600V 8A 145ns Automotive 2-Pin(2+Tab) TO-220AC Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-800 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,800V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-800 | PH | 09+ | auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| BY229-800,127 | NXP Semiconductors | NXP Semiconductors | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-800-E3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,800V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-800-E3/45 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8.0 Amp 600 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-800-E3/45 | Vishay | Diode Switching 800V 8A 2-Pin(2+Tab) TO-220AC Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-800-E3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-800HE3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,800V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229-800HE3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-200 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,200V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-200-E3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,200V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-200-E3/45 | Vishay Semiconductors | Rectifiers 8.0 Amp 200 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-200-E3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-200-E3/81 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 8A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-200-E3/81 | Vishay Semiconductors | Rectifiers 8.0 Amp 200 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-200HE3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,200V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-200HE3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-200HE3/81 | Vishay | Diode Switching 200V 8A Automotive 3-Pin(2+Tab) TO-263AB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-200HE3/81 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 8A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-400 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,400V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-400-E3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,400V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-400-E3/31 | Vishay Semiconductors | Rectifiers 8.0 Amp 400 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-400-E3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-400-E3/81 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 8A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-400-E3/81 | Vishay Semiconductors | Rectifiers 8.0 Amp 200 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-400HE3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,400V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-400HE3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-400HE3/81 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 8A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-400HE3/81 | Vishay Semiconductors | Rectifiers 8.0A 400 Volt 145ns 100 Amp IFSM | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-400HE3/81 | Vishay | Rectifier Diode Switching 400V 8A 145ns Automotive 3-Pin(2+Tab) TO-263AB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-600 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,600V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-600-E3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,600V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-600-E3/45 | Vishay | Rectifier Diode Switching 600V 8A 145ns 3-Pin(2+Tab) TO-263AB Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-600-E3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-600-E3/45 | Vishay Semiconductors | Rectifiers 8.0 Amp 600 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-600-E3/81 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 8A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-600-E3/81 | Vishay Semiconductors | Rectifiers 8.0 Amp 600 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-600HE3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,600V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-600HE3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-600HE3/81 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 8A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-800 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,800V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-800-E3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,800V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-800-E3/45 | Vishay Semiconductors | Rectifiers 8.0 Amp 800 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-800-E3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-800-E3/81 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 8A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-800-E3/81 | Vishay | Rectifier Diode Switching 800V 8A 145ns 3-Pin(2+Tab) TO-263AB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-800HE3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,800V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-800HE3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-800HE3/81 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8.0A 800 Volt 145ns 100 Amp IFSM | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-800HE3/81 | Vishay | Diode Switching 800V 8A Automotive 3-Pin(2+Tab) TO-263AB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229B-800HE3/81 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 8A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229F-600 | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| BY229X-200 | NXP Semiconductors | Rectifiers RAIL REC-DD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-200,127 | NXP USA Inc. | Description: DIODE GEN PURP 150V 8A TO220FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 150 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-200-E3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,200V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-200-E3/45 | Vishay | Diode Switching 200V 8A 2-Pin(2+Tab) ITO-220AC Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-200-E3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-200HE3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,200V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-200HE3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-400-E3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,400V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-400-E3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-400-E3/45 | Vishay | Diode Switching 400V 8A 2-Pin(2+Tab) ITO-220AC Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-400HE3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,400V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-400HE3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-600 | NXP Semiconductors | Rectifiers RAIL REC-DD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-600,127 | NXP USA Inc. | Description: DIODE GEN PURP 500V 8A TO220FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 500 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-600-E3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,600V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-600-E3/45 | Vishay | Diode Switching 600V 8A 2-Pin(2+Tab) ITO-220AC Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-600-E3/45 | Vishay Semiconductors | Rectifiers 8.0 Amp 600 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-600-E3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-600HE3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,600V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-600HE3/45 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8.0A 600 Volt 145ns 100 Amp IFSM | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-600HE3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-800 | auf Bestellung 10600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| BY229X-800 Produktcode: 111591 | Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle | Produkt ist nicht verfügbar | ||||||||||||||||||
| BY229X-800 | NXP Semiconductors | Rectifiers RAIL REC-DD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-800,127 | NXP USA Inc. | Description: DIODE GEN PURP 600V 8A TO220FP Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220FP Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 400 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-800,127 | NXP Semiconductors | Rectifiers RAIL REC-DD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-800-E3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,800V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-800-E3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-800-E3/45 | Vishay | Diode Switching 800V 8A 2-Pin(2+Tab) ITO-220AC Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-800HE3 | Vishay Semiconductors | Diodes - General Purpose, Power, Switching 8A,800V,145NS,FS PLASTIC RECT | Produkt ist nicht verfügbar | |||||||||||||||||
| BY229X-800HE3/45 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 8A ITO220AC Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 145 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: ITO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251 | DIOTEC SEMICONDUCTOR | BY251-DIO THT universal diodes | auf Bestellung 3505 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY251 | Diotec Semiconductor | Rectifier Diode Switching 200V 3A 1500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251 | Diotec Semiconductor | Description: DIODE GEN PURP 200V 3A DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | auf Bestellung 159800 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY251 | Taiwan Semiconductor | Rectifiers 3A,200V,Std SILASTIC Rect | auf Bestellung 9 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY251 | DC COMPONENTS | BY251-DC THT universal diodes | auf Bestellung 4570 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY251 | EIC | Diode 200V 3A 2-Pin DO-201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251 | Diotec Semiconductor | Description: DIODE GEN PURP 200V 3A DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | auf Bestellung 1675 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY251 | Diotec Semiconductor | Rectifiers Diode, DO-201, 200V, 3A | auf Bestellung 4855 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY251 R0 | Taiwan Semiconductor | Rectifiers 3A,200V,STD.SILASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251 R0 | Taiwan Semiconductor | Diode 200V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251 R0G | Taiwan Semiconductor | Rectifiers 3A,200V,STD.SILASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251 X0 | Taiwan Semiconductor | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251 X0G | Taiwan Semiconductor | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251-CT | Diotec Semiconductor | Description: DIODE GEN PURP 200V 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | auf Bestellung 1675 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY251G | Taiwan Semiconductor | Diode 200V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251G | TAIWAN SEMICONDUCTOR | Description: TAIWAN SEMICONDUCTOR - BY251G - Diode mit Standard-Erholzeit, 200 V, 3 A, Einfach, 1 V, 150 A tariffCode: 85411000 Bauform - Diode: DO-201AD Durchlassstoßstrom: 150A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1V Sperrverzögerungszeit: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 3A euEccn: NLR Wiederkehrende Spitzensperrspannung: 200V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 579 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY251G A0G | Taiwan Semiconductor | Rectifier Diode 200V 3A 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251G A0G | Taiwan Semiconductor | Rectifiers 3A, 200V, Standard Recovery Rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251G R0G | Taiwan Semiconductor | Rectifiers 3A 200V Standard Rec overy Rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251G R0G | Taiwan Semiconductor | Diode 200V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251G R0G | Taiwan Semiconductor | Diode 200V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251GP-E3/54 | Vishay | Rectifier Diode Switching 200V 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251GP-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251GP-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251GP-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | auf Bestellung 256 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY251GP-E3/73 | Vishay | Diode Switching 200V 3A 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251GPHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251GPHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251P-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | auf Bestellung 5437 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY251P-E3/54 | Vishay | Diode Switching 200V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251P-E3/54 | Vishay | Diode Switching 200V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251P-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | auf Bestellung 3950 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY251P-E3/54 | Vishay General Semiconductor | Rectifiers 3.0 Amp 200 Volt | auf Bestellung 7509 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY251P-E3/54 | VISHAY | BY251P-E3/54 THT universal diodes | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251P-E3/54 | Vishay | Diode Switching 200V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251P-E3/73 | Vishay | Diode Switching 200V 3A 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251P-E3/73 | Vishay General Semiconductor | Rectifiers 3A,200V,STD,PLASTIC RECT,DO-201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY251P-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 | Diotec Semiconductor | Description: DIODE GEN PURP 400V 3A DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 | DIOTEC SEMICONDUCTOR | BY252-DIO THT universal diodes | auf Bestellung 1140 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY252 | EIC Semiconductor | Rectifier Diode 400V 3A 2-Pin DO-201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 | Diotec Semiconductor | Rectifier Diode Switching 400V 3A 1500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 | Diotec Semiconductor | Rectifier Diode Switching 400V 3A 1500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 | Diotec Semiconductor | Description: DIODE GEN PURP 400V 3A DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 | DC COMPONENTS | BY252-DC THT universal diodes | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 | Diotec Electronics | Rectifier Diode Switching 400V 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY252 | Taiwan Semiconductor | Rectifiers 3A,400V,Std SILASTIC Rect | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 | Diotec Semiconductor | Rectifier Diode Switching 400V 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY252 | Diotec Semiconductor | Rectifier Diode Switching 400V 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY252 | Diotec Semiconductor | Rectifier Diode Switching 400V 3A 1500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 | Diotec Semiconductor | Rectifiers Diode, DO-201, 400V, 3A | auf Bestellung 5023 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY252 | Diotec Semiconductor | Rectifier Diode Switching 400V 3A 1500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 R0 | Taiwan Semiconductor | Rectifiers 3A,400V,STD.SILASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 R0 | Taiwan Semiconductor | Diode 400V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 R0G | Taiwan Semiconductor | Rectifier Diode Switching Si 400V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 R0G | Taiwan Semiconductor | Rectifiers 3A,400V,STD.SILASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 X0 | Taiwan Semiconductor | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252 X0G | Taiwan Semiconductor | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252-CT | Diotec Semiconductor | Description: DIODE GEN PURP 400V 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | auf Bestellung 13600 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY252G | Taiwan Semiconductor Corporation | Description: 3A, 400V, STANDARD RECOVERY RECT Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252G | Taiwan Semiconductor | Rectifiers 3A, 400V, Standard Recovery Rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252G R0G | Taiwan Semiconductor | Rectifiers 3A 400V Standard Rec overy Rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252G R0G | Taiwan Semiconductor | Rectifier Diode 400V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252G R0G | Taiwan Semiconductor | Rectifier Diode 400V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252GP-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252GP-E3/73 | Vishay | Diode Switching 400V 3A 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252GP-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252GPHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252P-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | auf Bestellung 7485 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY252P-E3/54 | Vishay | Rectifier Diode Switching 400V 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252P-E3/54 | Vishay | Rectifier Diode Switching 400V 3A 3000ns 2-Pin DO-201AD T/R | auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY252P-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | auf Bestellung 5600 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY252P-E3/54 | Vishay General Semiconductor | Rectifiers 3.0 Amp 400 Volt | auf Bestellung 4257 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY252P-E3/54 | Vishay | Rectifier Diode Switching 400V 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY252P-E3/54 | Vishay | Rectifier Diode Switching 400V 3A 3000ns 2-Pin DO-201AD T/R | auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY252P-E3/54 | Vishay | Rectifier Diode Switching 400V 3A 3000ns 2-Pin DO-201AD T/R | auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY252P-E3/73 | Vishay | Rectifier Diode Switching 400V 3A 3000ns 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253 | Diotec Semiconductor | Diode Switching 600V 3A Automotive 2-Pin DO-201 Ammo | auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY253 | EIC | Diode 600V 3A 2-Pin DO-201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253 | DC COMPONENTS | Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; Ammo Pack; Ifsm: 200A; DO27 Kind of package: Ammo Pack Mounting: THT Max. forward impulse current: 200A Max. off-state voltage: 600V Case: DO27 Type of diode: rectifying Semiconductor structure: single diode Load current: 3A Max. forward voltage: 1.1V | auf Bestellung 1785 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY253 | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; Ammo Pack; Ifsm: 100A; DO201; 1.5us Kind of package: Ammo Pack Mounting: THT Max. forward impulse current: 100A Max. off-state voltage: 600V Leakage current: 5µA Case: DO201 Type of diode: rectifying Semiconductor structure: single diode Load current: 3A Reverse recovery time: 1.5µs Max. load current: 20A Max. forward voltage: 1.1V | auf Bestellung 1320 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY253 | Diotec Semiconductor | Rectifiers Diode, DO-201, 600V, 3A | auf Bestellung 1694 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY253 | Diotec Semiconductor | Rectifier Diode Switching 600V 3A 1500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253 | Diotec Semiconductor AG | Description: Diode, DO-201, 600V, 3A Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | auf Bestellung 368900 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY253 | DC COMPONENTS | Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; Ammo Pack; Ifsm: 200A; DO27 Kind of package: Ammo Pack Mounting: THT Max. forward impulse current: 200A Max. off-state voltage: 600V Case: DO27 Type of diode: rectifying Semiconductor structure: single diode Load current: 3A Max. forward voltage: 1.1V | auf Bestellung 1785 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY253 | Diotec Semiconductor | Rectifier Diode Switching 600V 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY253 Produktcode: 189078 | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden | Produkt ist nicht verfügbar | ||||||||||||||||||
| BY253 | Diotec Semiconductor | Description: DIODE GEN PURP 600V 3A DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | auf Bestellung 368900 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY253 | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 3A; Ammo Pack; Ifsm: 100A; DO201; 1.5us Kind of package: Ammo Pack Mounting: THT Max. forward impulse current: 100A Max. off-state voltage: 600V Leakage current: 5µA Case: DO201 Type of diode: rectifying Semiconductor structure: single diode Load current: 3A Reverse recovery time: 1.5µs Max. load current: 20A Max. forward voltage: 1.1V | auf Bestellung 1320 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY253 R0 | Taiwan Semiconductor | Rectifiers 3A,600V,STD.SILASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253 R0 | Taiwan Semiconductor | Diode 600V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253 R0G | Taiwan Semiconductor | Rectifiers 3A,600V,STD.SILASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253 X0 | Taiwan Semiconductor | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253 X0G | Taiwan Semiconductor | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253-CT | Diotec Semiconductor | Description: DIODE GEN PURP 600V 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | auf Bestellung 382500 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY253G | Taiwan Semiconductor | Rectifiers 3A, 600V, Standard Recovery Rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253G | Taiwan Semiconductor Corporation | Description: 3A, 600V, STANDARD RECOVERY RECT Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253G A0G | Taiwan Semiconductor | Rectifier Diode 600V 3A 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253G A0G | Taiwan Semiconductor | Rectifiers 3A 600V Standard Rec overy Rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253G R0G | Taiwan Semiconductor | Rectifier Diode 600V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253G R0G | Taiwan Semiconductor | Rectifiers 3A 600V Standard Rec overy Rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253G R0G | Taiwan Semiconductor | Rectifier Diode 600V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253GP-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253GP-E3/54 | Vishay | Rectifier Diode Switching 600V 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253GP-E3/73 | Vishay | Diode Switching 600V 3A 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253GP-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253GPHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253P-E3/54 | Vishay General Semiconductor | Rectifiers 3.0 Amp 600 Volt | auf Bestellung 5563 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY253P-E3/54 | Vishay | Rectifier Diode Switching 600V 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253P-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | auf Bestellung 5411 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY253P-E3/54 | Vishay | Rectifier Diode Switching 600V 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253P-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | auf Bestellung 4200 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY253P-E3/54 | Vishay | Rectifier Diode Switching 600V 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253P-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 600V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253P-E3/73 | Vishay | Diode Switching 600V 3A 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY253P-E3/73 | Vishay General Semiconductor | Rectifiers 600 Volt 3.0 Amp Glass Passivated | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254 | Diotec Semiconductor | Rectifier Diode Switching 800V 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 10201 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY254 | Diotec Semiconductor | Rectifier Diode Switching 800V 3A 1500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254 | Diotec Semiconductor | Rectifiers Diode, DO-201, 800V, 3A | auf Bestellung 1688 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY254 | Diotec Semiconductor | Rectifier Diode Switching 800V 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 10200 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY254 Produktcode: 187762 | DC COMPONENTS | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden Gehäuse: DO-201AD(DO-27) Urev.,V: 800 V Iausricht.,А: 3 A Beschreibung: Випрямний Монтаж: THT Падіння напруги Vf: 1,1 V | auf Bestellung 3 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| BY254 | DC COMPONENTS | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 3A; Ammo Pack; Ifsm: 200A; DO27 Mounting: THT Max. forward impulse current: 200A Kind of package: Ammo Pack Type of diode: rectifying Case: DO27 Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 3A Semiconductor structure: single diode | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY254 | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 3A; Ammo Pack; Ifsm: 100A; DO201; 1.5us Mounting: THT Reverse recovery time: 1.5µs Max. forward impulse current: 100A Leakage current: 5µA Kind of package: Ammo Pack Type of diode: rectifying Case: DO201 Max. off-state voltage: 0.8kV Max. load current: 20A Max. forward voltage: 1.1V Load current: 3A Semiconductor structure: single diode Anzahl je Verpackung: 5 Stücke | auf Bestellung 2495 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY254 | MULTICOMP | Description: MULTICOMP - BY254 - Diode mit Standard-Erholzeit, 800 V, 3 A, Einfach, 840 mV, 150 A Bauform - Diode: DO-201AD Durchlassstoßstrom: 150 Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 840 Sperrverzögerungszeit: - Durchschnittlicher Durchlassstrom: 3 Wiederkehrende Spitzensperrspannung: 800 Anzahl der Pins: 2 Produktpalette: BY254 Betriebstemperatur, max.: 150 SVHC: No SVHC (07-Jul-2017) | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254 | Diotec Electronics | Rectifier Diode Switching 800V 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 3195 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY254 | EIC Semiconductor | Diode 800V 3A 2-Pin DO-201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254 | Diotec Semiconductor | Rectifier Diode Switching 800V 3A 1500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254 | Diotec Semiconductor | Description: DIODE GEN PURP 800V 3A DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | auf Bestellung 1400 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY254 | Diotec Semiconductor | Rectifier Diode Switching 800V 3A 1500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254 | Taiwan Semiconductor | Rectifiers 3A,800V,Std SILASTIC Rect | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254 | DC COMPONENTS | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 3A; Ammo Pack; Ifsm: 200A; DO27 Mounting: THT Max. forward impulse current: 200A Kind of package: Ammo Pack Type of diode: rectifying Case: DO27 Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 3A Semiconductor structure: single diode Anzahl je Verpackung: 5 Stücke | auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY254 | Diotec Electronics | Rectifier Diode Switching 800V 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 10200 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY254 | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 3A; Ammo Pack; Ifsm: 100A; DO201; 1.5us Mounting: THT Reverse recovery time: 1.5µs Max. forward impulse current: 100A Leakage current: 5µA Kind of package: Ammo Pack Type of diode: rectifying Case: DO201 Max. off-state voltage: 0.8kV Max. load current: 20A Max. forward voltage: 1.1V Load current: 3A Semiconductor structure: single diode | auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY254 R0 | Taiwan Semiconductor | Diode 800V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254 R0 | Taiwan Semiconductor | Rectifiers 3A,800V,STD.SILASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254 R0G | Taiwan Semiconductor | Rectifier Diode Switching Si 800V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254 R0G | Taiwan Semiconductor | Rectifiers 3A,800V,STD.SILASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254 X0 | Taiwan Semiconductor | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254 X0G | Taiwan Semiconductor | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254-CT | Diotec Semiconductor | Description: DIODE GEN PURP 800V 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | auf Bestellung 1425 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY254G | Taiwan Semiconductor Corporation | Description: 3A, 800V, STANDARD RECOVERY RECT Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | auf Bestellung 1250 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY254G | Taiwan Semiconductor | Rectifiers 3A, 800V, Standard Recovery Rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254G | Taiwan Semiconductor Corporation | Description: 3A, 800V, STANDARD RECOVERY RECT Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | auf Bestellung 1250 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY254G A0G | Taiwan Semiconductor | Rectifiers 3A, 800V, Standard Recovery Rectifier | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254G A0G | Taiwan Semiconductor | Rectifier Diode 800V 3A 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254G R0G | Taiwan Semiconductor | Rectifier Diode 800V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254G R0G | Taiwan Semiconductor | Rectifiers 3A 800V Standard Rec overy Rectifier | auf Bestellung 4806 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| BY254G R0G | Taiwan Semiconductor | Rectifier Diode 800V 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254GP-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254GP-E3/54 | Vishay | Rectifier Diode Switching 800V 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254GP-E3/73 | Vishay | Rectifier Diode Switching 800V 3A 3000ns 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254GP-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254GPHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254P-E3/54 | Vishay | Rectifier Diode Switching 800V 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254P-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | auf Bestellung 4200 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY254P-E3/54 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 150A; DO201AD Mounting: THT Max. forward impulse current: 150A Kind of package: reel; tape Type of diode: rectifying Case: DO201AD Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 3A Semiconductor structure: single diode | auf Bestellung 2468 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY254P-E3/54 | Vishay General Semiconductor | Rectifiers 3.0 Amp 800 Volt | auf Bestellung 25299 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY254P-E3/54 | Vishay | Rectifier Diode Switching 800V 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254P-E3/54 | Vishay | Rectifier Diode Switching 800V 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254P-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | auf Bestellung 5576 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY254P-E3/54 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 3A; reel,tape; Ifsm: 150A; DO201AD Mounting: THT Max. forward impulse current: 150A Kind of package: reel; tape Type of diode: rectifying Case: DO201AD Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 3A Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke | auf Bestellung 2468 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY254P-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254P-E3/73 | Vishay General Semiconductor | Rectifiers 3.0 Amp 800 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254P-E3/73 | Vishay | Rectifier Diode Switching 800V 3A 3000ns 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY254P-E3/73 | Vishay | Rectifier Diode Switching 800V 3A 3000ns 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255 | EIC Semiconductor | Rectifier Diode 1.3KV 3A 2-Pin DO-201AD | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY255 | DC COMPONENTS | Category: THT universal diodes Description: Diode: rectifying; THT; 1.3kV; 3A; Ammo Pack; Ifsm: 200A; DO27 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.3kV Load current: 3A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255 | LGE | 3A; 1300V; packaging: ammo; BY255 diode rectifying DP BY255 q Anzahl je Verpackung: 1250 Stücke | auf Bestellung 1250 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY255 | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 1.3kV; 3A; Ammo Pack; Ifsm: 100A; DO201 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.3kV Load current: 3A Max. load current: 20A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 100A Case: DO201 Max. forward voltage: 1.1V Leakage current: 5µA Reverse recovery time: 1.5µs Anzahl je Verpackung: 5 Stücke | auf Bestellung 17345 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY255 | Diotec Semiconductor | Rectifier Diode Switching 1.3KV 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY255 | Diotec Semiconductor | Description: DIODE GEN PURP 1300V 3A DO201 Packaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V | auf Bestellung 2164 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY255 | LUGUANG ELECTRONIC | Category: THT universal diodes Description: Diode: rectifying; THT; 1.3kV; 3A; Ifsm: 150A; DO201AD; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.3kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1V Leakage current: 5µA | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255 | Taiwan Semiconductor | Rectifiers 3A,1300V,STD.SILASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255 | YANGJIE TECHNOLOGY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.3kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.3kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Anzahl je Verpackung: 5 Stücke | auf Bestellung 685 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY255 | EIC Semiconductor | Rectifier Diode 1.3KV 3A 2-Pin DO-201AD | auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY255 | LGE | 3A; 1300V; packaging: ammo; BY255 diode rectifying DP BY255 q Anzahl je Verpackung: 1250 Stücke | auf Bestellung 800 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY255 | DC COMPONENTS | Category: THT universal diodes Description: Diode: rectifying; THT; 1.3kV; 3A; Ammo Pack; Ifsm: 200A; DO27 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.3kV Load current: 3A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255 | Diotec Semiconductor | Rectifier Diode Switching 1.3KV 3A 1500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255 | Diotec Semiconductor | Description: DIODE GEN PURP 1300V 3A DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 1300 Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Reverse Recovery Time (trr): 1.5 µs Voltage - DC Reverse (Vr) (Max): 1300 V | auf Bestellung 1700 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY255 | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 1.3kV; 3A; Ammo Pack; Ifsm: 100A; DO201 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.3kV Load current: 3A Max. load current: 20A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 100A Case: DO201 Max. forward voltage: 1.1V Leakage current: 5µA Reverse recovery time: 1.5µs | auf Bestellung 17345 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY255 | Diotec Semiconductor | Rectifiers Diode, DO-201, 1300V, 3A | auf Bestellung 3876 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY255 | LUGUANG ELECTRONIC | Category: THT universal diodes Description: Diode: rectifying; THT; 1.3kV; 3A; Ifsm: 150A; DO201AD; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.3kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1V Leakage current: 5µA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255 | Diotec Electronics | Rectifier Diode Switching 1.3KV 3A 1500ns 2-Pin DO-201 Ammo | auf Bestellung 17805 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY255 | YANGJIE TECHNOLOGY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.3kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.3kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Kind of package: tape Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.1V | auf Bestellung 685 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY255 Produktcode: 34884 | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden Gehäuse: DO-27 Urev.,V: 1300 Iausricht.,А: 3 | auf Bestellung 32 Stück: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| BY255 | Diotec Semiconductor | Rectifier Diode Switching 1.3KV 3A 1500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255 | MIC | 3A; 1300V; packaging: ammo; BY255 diode rectifying DP BY255 Anzahl je Verpackung: 1250 Stücke | auf Bestellung 6760 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY255 R0 | Taiwan Semiconductor | Diode 1.3KV 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255 R0 | Taiwan Semiconductor | Rectifiers 3A,1300V,STD.SILASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255 X0 | Taiwan Semiconductor | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255 X0G | Taiwan Semiconductor | Rectifiers | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255-AQ | Diotec Semiconductor | BY255-AQ | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255-AQ | Diotec Semiconductor | Rectifier Diode Switching 1.3KV 3A 1500ns Automotive AEC-Q101 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255-AQ | Diotec Semiconductor | Description: DIODE GEN PURP 1.3KV 3A DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V | auf Bestellung 35 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY255-AQ | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 1.3kV; 3A; Ammo Pack; Ifsm: 100A; DO201 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.3kV Load current: 3A Max. load current: 20A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 100A Case: DO201 Max. forward voltage: 1.1V Leakage current: 5µA Reverse recovery time: 1.5µs | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255-AQ | Diotec Semiconductor | Rectifiers Diode, DO-201, 1300V, 3A, AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255-AQ | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 1.3kV; 3A; Ammo Pack; Ifsm: 100A; DO201 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.3kV Load current: 3A Max. load current: 20A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 100A Case: DO201 Max. forward voltage: 1.1V Leakage current: 5µA Reverse recovery time: 1.5µs Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255-AQ | Diotec Semiconductor | Description: DIODE GEN PURP 1300V 3A DO201 Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255-AQ-CT | Diotec Semiconductor | Description: DIODE GEN PURP 1.3KV 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 1.3 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255-CT | Diotec Semiconductor | Description: DIODE GEN PURP 1.3KV 3A DO201 Packaging: Strip Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1.3 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 1.3 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255G | Yangjie Electronic Technology | General Purpose Rectifier | auf Bestellung 50000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY255G | Yangjie Technology | Description: DO-201AD 1300V 3.0A Diodes Rec Packaging: Tape & Box (TB) Part Status: Active | auf Bestellung 125000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY255GP | Vishay Semiconductors | Rectifiers 3A,1300V, STD SUPERECT,DO-201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP-7000HE3/54 | Vishay Semiconductors | Vishay | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP-E3 | Vishay Semiconductors | Rectifiers 3A,1300V, STD SUPERECT,DO-201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP-E3/1 | Vishay Semiconductors | Rectifiers 1300 Volt 3.0 Amp Glass Passivated | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP-E3/23 | Vishay Semiconductors | Rectifiers RECOMMENDED ALT 625-BY255GP-E3 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP-E3/4 | Vishay Semiconductors | Rectifiers 3.0 Amp 1300 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP-E3/51 | Vishay Semiconductors | Rectifiers 3.0 Amp 1300 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP-E3/54 | Vishay Semiconductors | Rectifiers 3.0 Amp 1300 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP-E3/54 | Vishay | Diode Switching 1.3KV 3A 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP-E3/54 | Vishay | Rectifier Diode Switching 1.3KV 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.3KV 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 1300 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP-E3/73 | Vishay Semiconductors | Rectifiers 3.0 Amp 1300 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.3KV 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 1300 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP/1 | Vishay Semiconductors | Rectifiers 1300 Volt 3.0 Amp Glass Passivated | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP/23 | Vishay Semiconductors | Rectifiers RECOMMENDED ALT 625-BY255GP-E3 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP/4 | Vishay Semiconductors | Rectifiers 3.0 Amp 1300 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GP/54 | Vishay Semiconductors | Rectifiers 3.0 Amp 1300 Volt | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GPHE3 | Vishay Semiconductors | Rectifiers 3A,1300V, STD SUPERECT,DO-201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GPHE3/54 | Vishay | Rectifier Diode Switching 1.3KV 3A 3000ns Automotive 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GPHE3/54 | Vishay Semiconductors | Rectifiers 1300 Volt 3.0 Amp Glass Passivated | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GPHE3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.3KV 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 1300 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GPHE3/73 | Vishay Semiconductors | Rectifiers 1300 Volt 3.0 Amp Glass Passivated | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GPHE3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.3KV 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 1300 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255GPHE3/73 | Vishay | Rectifier Diode Switching 1.3KV 3A 3000ns Automotive 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255P | auf Bestellung 2380 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| BY255P-E3/54 | VISHAY | Description: VISHAY - BY255P-E3/54 - Diode mit Standard-Erholzeit, 1.3 kV, 3 A, Einfach, 1.1 V, 3 µs, 150 A tariffCode: 85411000 Bauform - Diode: DO-201AD Durchlassstoßstrom: 150A rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 1.1V Sperrverzögerungszeit: 3µs usEccn: EAR99 Durchschnittlicher Durchlassstrom: 3A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.3kV Anzahl der Pins: 2Pin(s) Produktpalette: BY255 productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C | auf Bestellung 12525 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY255P-E3/54 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.3kV; 3A; reel,tape; Ifsm: 150A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.3kV Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1.1V | auf Bestellung 3363 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY255P-E3/54 | Vishay | Rectifier Diode Switching 1.3KV 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255P-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.3KV 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 1300 | auf Bestellung 25200 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY255P-E3/54 | Vishay | Rectifier Diode Switching 1.3KV 3A 3000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255P-E3/54 | Vishay | Rectifier Diode Switching 1.3KV 3A 3000ns 2-Pin DO-201AD T/R | auf Bestellung 1234 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY255P-E3/54 | Vishay | Rectifier Diode Switching 1.3KV 3A 3000ns 2-Pin DO-201AD T/R | auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY255P-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.3KV 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 1300 Current - Reverse Leakage @ Vr: 5 µA @ 1300 V | auf Bestellung 26402 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY255P-E3/54 | Vishay | Rectifier Diode Switching 1.3KV 3A 3000ns 2-Pin DO-201AD T/R | auf Bestellung 1234 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY255P-E3/54 | Vishay General Semiconductor | Rectifiers 3.0 Amp 1300 Volt | auf Bestellung 9109 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY255P-E3/54 | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.3kV; 3A; reel,tape; Ifsm: 150A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.3kV Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1.1V Anzahl je Verpackung: 1 Stücke | auf Bestellung 3363 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY255P-E3/54 | Vishay | Rectifier Diode Switching 1.3KV 3A 3000ns 2-Pin DO-201AD T/R | auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY255P-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.3KV 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 1300 Current - Reverse Leakage @ Vr: 5 µA @ 1300 V | auf Bestellung 32000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY255P-E3/73 | Vishay General Semiconductor | Rectifiers 3.0 Amp 1300 Volt | auf Bestellung 1831 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY255P-E3/73 | Vishay | Diode Switching 1.3KV 3A 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255P-E3/73 | Vishay | Rectifier Diode Switching 1.3KV 3A 3000ns 2-Pin DO-201AD Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY255P-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.3KV 3A DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 1300 | auf Bestellung 1006 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY25Q128ASFIG(T) | BYTe Semiconductor | Description: 128 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q128ASSIG(R) | BYTe Semiconductor | Description: 128 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q128ASSIG(T) | BYTe Semiconductor | Description: 128 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q128ASSJG(R) | BYTe Semiconductor | Description: 128 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q128ASSJG(T) | BYTe Semiconductor | Description: 128 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q128ASWIG(R) | BYTe Semiconductor | Description: 128 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q128ESSIG(R) | BYTe Semiconductor | Description: 128 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7.5 ns Memory Organization: 16M x 8 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY25Q128ESSIG(R) | BYTe Semiconductor | Description: 128 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7.5 ns Memory Organization: 16M x 8 | auf Bestellung 3990 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY25Q128ESSIG(T) | BYTe Semiconductor | Description: 128 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7.5 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q128ESWIG(R) | BYTe Semiconductor | Description: 128 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7.5 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q128ESWIG(R) | BYTe Semiconductor | Description: 128 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7.5 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16AWSIG(T) | BYTe Semiconductor | Description: 16 MBIT, WIDE VCC (1.7V TO 3.6V) Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 12 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16AWTIG(R) | BYTe Semiconductor | Description: 16 MBIT, WIDE VCC (1.7V TO 3.6V) Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms, 3ms Memory Interface: SPI - Quad I/O Access Time: 12 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16AWTIG(R) | BYTe Semiconductor | Description: 16 MBIT, WIDE VCC (1.7V TO 3.6V) Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms, 3ms Memory Interface: SPI - Quad I/O Access Time: 12 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16AWTIG(T) | BYTe Semiconductor | Description: 16 MBIT, WIDE VCC (1.7V TO 3.6V) Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 12 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16AWXIG(R) | BYTe Semiconductor | Description: 16 MBIT, WIDE VCC (1.7V TO 3.6V) Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 12 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BLMIG(R) | BYTe Semiconductor | Description: 16 MBIT, 1.8V (1.65V TO 2.0V), - Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 8 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BLMIG(R) | BYTe Semiconductor | Description: 16 MBIT, 1.8V (1.65V TO 2.0V), - Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 8 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BLSIG(T) | BYTe Semiconductor | Description: 16 MBIT, 1.8V (1.65V TO 2.0V), - Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 8 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BLTIG(T) | BYTe Semiconductor | Description: 16 MBIT, 1.8V (1.65V TO 2.0V), - Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 8 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BSMIG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BSMIG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BSSIG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BSSIG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BSSIG(T) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BSSJG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BSSJG(T) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BSTIG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BSTIG(R) | BOYAMICRO | FLASH 16MBIT 133MHZ SOIC-8 | auf Bestellung 1593 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY25Q16BSTIG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BSTIG(T) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BSTJG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BSTJG(T) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16BSUJG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16ESMIG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 8-USON (2x3) Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16ESSIG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16ESSIG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16ESSIG(T) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16ESTIG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16ESTIG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16ESTIG(T) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16ESTJG(T) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q16ESUJG(R) | BYTe Semiconductor | Description: 16 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 8-USON (2x3) Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q20AWTIG(T) | BYTe Semiconductor | Description: 2 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q20AWUIG(R) | BYTe Semiconductor | Description: 2MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q20AWUIG(R) | BYTe Semiconductor | Description: 2MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q20BLAIG(R) | BYTe Semiconductor | Description: 2 MBIT, 1.8V (1.65V TO 2.0V), -4 Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 6-USON (1.2x1.2) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q20BLRIG(R) | BYTe Semiconductor | Description: 2 MBIT, 1.8V (1.65V TO 2.0V), -4 Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 6-USON (1.2x1.2) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q20BLRIG(R) | BYTe Semiconductor | Description: 2 MBIT, 1.8V (1.65V TO 2.0V), -4 Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 6-USON (1.2x1.2) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q20BLYIG(R) | BYTe Semiconductor | Description: 2 MBIT, 1.8V (1.65V TO 2.0V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q20BLYIG(R) | BYTe Semiconductor | Description: 2 MBIT, 1.8V (1.65V TO 2.0V), -4 Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q20BLZIG(R) | BYTe Semiconductor | Description: 2 MBIT, 1.8V (1.65V TO 2.0V), -4 Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 6-USON (1.2x0.85) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q256FSEIG(R) | BYTe Semiconductor | Description: 256 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (8x6) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q256FSEIG(R) | BYTe Semiconductor | Description: 256 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (8x6) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q256FSFIG(T) | BYTe Semiconductor | Description: 256 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q256FSSIG(R) | BYTe Semiconductor | Description: 256 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q256FSSIG(R) | BYTe Semiconductor | Description: 256 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q256FSSIG(T) | BYTe Semiconductor | Description: 256 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q256FSWIG(R) | BYTe Semiconductor | Description: 256 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q256FSWIG(R) | BYTe Semiconductor | Description: 256 MBIT, 3.0V (2.7V TO 3.6V), - Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32BSHIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32BSHJG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32BSSIG | BOYAMICRO | 32Mb-FLASH Memory IC; x8-bit; 2,7~3,6V; 108MHz; Quad SPI; -40?85°C; Replacement for: W25Q32BVSSIG; W25Q32FVSSIG, W25Q32JVSSIQ, GD25Q32BSIG, EN25Q32B-104HIP BY25Q32BSSIG PEF25q32bssig BY Anzahl je Verpackung: 10 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY25Q32BSSIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32BSSIG(T) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32BSTIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32BSTIG(T) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32BSTJG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32BSTJG(T) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32BSWIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32CSHJG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32CSKIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32CSKJG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32CSSIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32CSSIG(T) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32CSTIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32CSTIG(T) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32CSTJG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32CSTJG(T) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32CSWIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32ESHIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32ESSIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 4M x 8 | auf Bestellung 3820 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY25Q32ESSIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 4M x 8 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY25Q32ESSIG(T) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 4M x 8 | auf Bestellung 9500 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY25Q32ESTIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32ESTIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32ESTIG(T) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 4M x 8 | auf Bestellung 9985 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY25Q32ESWIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q32ESWIG(R) | BYTe Semiconductor | Description: 32 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40AWOIG(R) | BYTe Semiconductor | Description: 4 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40AWTIG(R) | BYTe Semiconductor | Description: 4 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40AWTIG(R) | BYTe Semiconductor | Description: 4 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40AWTIG(T) | BYTe Semiconductor | Description: 4 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40BLSIG(T) | BYTe Semiconductor | Description: 4 MBIT, 1.8V (1.65V TO 2.0V), -4 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40BLUIG(R) | BYTe Semiconductor | Description: 4 MBIT, 1.8V (1.65V TO 2.0V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40BLUIG(R) | BYTe Semiconductor | Description: 4 MBIT, 1.8V (1.65V TO 2.0V), -4 Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40BSMIG(R) | BYTe Semiconductor | Description: 4 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40BSMIG(R) | BYTe Semiconductor | Description: 4 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40BSSIG(R) | BYTe Semiconductor | Description: 4 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40BSSIG(T) | BYTe Semiconductor | Description: 4 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40BSTIG(R) | BYTe Semiconductor | Description: 4 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40BSTIG(R) | BYTe Semiconductor | Description: 4 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40BSTIG(T) | BYTe Semiconductor | Description: 4 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40BSTJG(R) | BYTe Semiconductor | Description: 4 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40BSTJG(T) | BYTe Semiconductor | Description: 4 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40GLSIG(T) | BYTe Semiconductor | Description: 4 MBIT, 1.8V (1.65V TO 2.0V), -4 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms, 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40GLUIG(R) | BYTe Semiconductor | Description: 4 MBIT, 1.8V (1.65V TO 2.0V), -4 Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms, 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40GLUIG(R) | BYTe Semiconductor | Description: 4 MBIT, 1.8V (1.65V TO 2.0V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms, 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40GWSIG(R) | BYTe Semiconductor | Description: 4 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40GWSIG(T) | BYTe Semiconductor | Description: 4 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40GWTIG(R) | BYTe Semiconductor | Description: 4 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40GWTIG(R) | BYTe Semiconductor | Description: 4 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40GWTIG(T) | BYTe Semiconductor | Description: 4 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q40GWUIG(R) | BYTe Semiconductor | Description: 4MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 85 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 17 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ASHIG(R) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ASSIG | BOYAMICRO | 64Mb-FLASH Memory IC; x8-bit; 2,7~3,6V; 120MHz; Quad SPI; -40?85°C; Replacement for: W25Q64CVSSIG, W25Q64FVSSIG, W25Q64JVSSIQ, GD25Q64BSIG, EN25Q64-104HIP BY25Q64ASSIG PEF25q64assig BY Anzahl je Verpackung: 10 Stücke | auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY25Q64ASSIG(R) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ASSIG(T) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ASTIG(R) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ASTIG(T) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ASWIG(R) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ESHIG(R) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Cut Tape (CT) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ESHIG(R) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ESSIG(R) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 8M x 8 | auf Bestellung 3690 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY25Q64ESSIG(R) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 8M x 8 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY25Q64ESSIG(T) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ESTIG(R) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ESTIG(R) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ESTIG(T) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ESWIG(R) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q64ESWIG(R) | BYTe Semiconductor | Description: 64 MBIT, 3.0V (2.7V TO 3.6V), -4 Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 11.5 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80AWSIG(R) | BYTe Semiconductor | Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80AWSIG(T) | BYTe Semiconductor | Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80AWTIG(R) | BYTe Semiconductor | Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80AWTIG(R) | BYTe Semiconductor | Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80AWTIG(T) | BYTe Semiconductor | Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80AWUIG(R) | BYTe Semiconductor | Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80AWXIG(R) | BYTe Semiconductor | Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80AWYIG(R) | BYTe Semiconductor | Description: 8 MBIT, WIDE VCC (1.7V TO 3.6V), Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80BSMIG(R) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80BSMIG(R) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80BSSIG(R) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80BSSIG(R) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80BSSIG(T) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80BSTIG(R) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80BSTIG(R) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80BSTIG(T) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80BSTJG(R) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80BSTJG(T) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80ESMIG(R) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 55µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80ESMIG(R) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 55µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80ESSIG(R) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 55µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80ESSIG(R) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 55µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80ESSIG(T) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 55µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80ESTIG(R) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 55µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80ESTIG(R) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 55µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY25Q80ESTIG(T) | BYTe Semiconductor | Description: 8 MBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 55µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY268TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.4KV 800MA SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Current - Reverse Leakage @ Vr: 2 µA @ 1400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY268TAP | Vishay | Diode Switching 0.8A 2-Pin SOD-57 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY268TAP | Vishay Semiconductors | Rectifiers FAST AVALANCHE 1400V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY268TR | Vishay | Rectifier Diode Switching 0.8A 400ns 2-Pin SOD-57 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY268TR | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.4KV 800MA SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Current - Reverse Leakage @ Vr: 2 µA @ 1400 V | auf Bestellung 167 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY268TR | Vishay | Rectifier Diode Switching 0.8A 400ns 2-Pin SOD-57 T/R | auf Bestellung 24453 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY268TR | Vishay Semiconductors | Rectifiers FAST AVALANCHE 1400V | auf Bestellung 23664 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY268TR | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 1.4KV 800MA SOD57 Packaging: Tape & Reel (TR) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 800mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Current - Reverse Leakage @ Vr: 2 µA @ 1400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY268TR | Vishay | Rectifier Diode Switching 0.8A 400ns 2-Pin SOD-57 T/R | auf Bestellung 24453 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY268TR | Vishay | Rectifier Diode Switching 0.8A 400ns 2-Pin SOD-57 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY268V | auf Bestellung 12180 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| BY269 Produktcode: 72040 | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden | Produkt ist nicht verfügbar | ||||||||||||||||||
| BY269 | VISHAY | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| BY269TAP Produktcode: 140193 | Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden | Produkt ist nicht verfügbar | ||||||||||||||||||
| BY269TAP | Vishay | Diode Switching 0.8A 2-Pin SOD-57 Ammo | auf Bestellung 17802 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY269TAP | Vishay Semiconductors | Rectifiers 1600 Volt 0.8 Amp 20 Amp IFSM | auf Bestellung 22917 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY269TAP | Vishay | Diode Switching 0.8A 2-Pin SOD-57 Ammo | auf Bestellung 17802 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY269TAP | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 0.8A; Ammo Pack; Ifsm: 20A; SOD57 Mounting: THT Load current: 0.8A Semiconductor structure: single diode Reverse recovery time: 400ns Max. forward impulse current: 20A Leakage current: 15µA Kind of package: Ammo Pack Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect; high voltage Case: SOD57 Max. off-state voltage: 1.6kV Max. forward voltage: 1.25V Anzahl je Verpackung: 1 Stücke | auf Bestellung 4712 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY269TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE AVAL 1.6KV 800MA SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Avalanche Current - Average Rectified (Io): 800mA Supplier Device Package: SOD-57 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Current - Reverse Leakage @ Vr: 2 µA @ 1400 V | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY269TAP | Vishay | Diode Switching 0.8A 2-Pin SOD-57 Ammo | auf Bestellung 17780 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY269TAP | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 0.8A; Ammo Pack; Ifsm: 20A; SOD57 Mounting: THT Load current: 0.8A Semiconductor structure: single diode Reverse recovery time: 400ns Max. forward impulse current: 20A Leakage current: 15µA Kind of package: Ammo Pack Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect; high voltage Case: SOD57 Max. off-state voltage: 1.6kV Max. forward voltage: 1.25V | auf Bestellung 4712 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY269TAP | Vishay General Semiconductor - Diodes Division | Description: DIODE AVAL 1.6KV 800MA SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Avalanche Current - Average Rectified (Io): 800mA Supplier Device Package: SOD-57 Operating Temperature - Junction: 140°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Current - Reverse Leakage @ Vr: 2 µA @ 1400 V | auf Bestellung 4868 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY269TAP | Vishay | Diode Switching 0.8A 2-Pin SOD-57 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY269TR | Vishay | Rectifier Diode Switching 0.8A 400ns 2-Pin SOD-57 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY269TR | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 0.8A; reel,tape; Ifsm: 20A; SOD57 Mounting: THT Load current: 0.8A Semiconductor structure: single diode Reverse recovery time: 400ns Max. forward impulse current: 20A Leakage current: 15µA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect; high voltage Case: SOD57 Max. off-state voltage: 1.6kV Max. forward voltage: 1.25V Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| BY269TR | Vishay | Rectifier Diode Switching 0.8A 400ns 2-Pin SOD-57 T/R | auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY269TR | Vishay General Semiconductor - Diodes Division | Description: DIODE AVAL 1.6KV 800MA SOD57 Packaging: Tape & Reel (TR) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Avalanche Current - Average Rectified (Io): 800mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Current - Reverse Leakage @ Vr: 2 µA @ 1600 V | auf Bestellung 43967 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY269TR | VISHAY | Description: VISHAY - BY269TR - Diode mit Standard-Erholzeit, 1.8 kV, 800 mA, Einfach, 1.25 V, 400 ns, 20 A tariffCode: 85411000 Bauform - Diode: SOD-57 Durchlassstoßstrom: 20A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 Durchlassspannung, max.: 1.25V Sperrverzögerungszeit: 400ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 800mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.8kV Anzahl der Pins: 2Pin(s) Produktpalette: BY269 productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | auf Bestellung 16130 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY269TR | VISHAY | Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 0.8A; reel,tape; Ifsm: 20A; SOD57 Mounting: THT Load current: 0.8A Semiconductor structure: single diode Reverse recovery time: 400ns Max. forward impulse current: 20A Leakage current: 15µA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: avalanche breakdown effect; high voltage Case: SOD57 Max. off-state voltage: 1.6kV Max. forward voltage: 1.25V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY269TR | Vishay | Rectifier Diode Switching 0.8A 400ns 2-Pin SOD-57 T/R | auf Bestellung 19854 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY269TR | Vishay | Rectifier Diode Switching 0.8A 400ns 2-Pin SOD-57 T/R | auf Bestellung 19854 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY269TR | VISHAY | Description: VISHAY - BY269TR - Diode mit Standard-Erholzeit, 1.8 kV, 800 mA, Einfach, 1.25 V, 400 ns, 20 A tariffCode: 85411000 Bauform - Diode: SOD-57 Durchlassstoßstrom: 20A rohsCompliant: Y-EX hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 Durchlassspannung, max.: 1.25V Sperrverzögerungszeit: 400ns usEccn: EAR99 Durchschnittlicher Durchlassstrom: 800mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.8kV Anzahl der Pins: 2Pin(s) Produktpalette: BY269 productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C | auf Bestellung 16130 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY269TR | Vishay General Semiconductor - Diodes Division | Description: DIODE AVAL 1.6KV 800MA SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Avalanche Current - Average Rectified (Io): 800mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA Current - Reverse Leakage @ Vr: 2 µA @ 1600 V | auf Bestellung 48907 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY269TR | Vishay | Rectifier Diode Switching 0.8A 400ns 2-Pin SOD-57 T/R | auf Bestellung 25000 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY269TR | Vishay Semiconductors | Rectifiers 1600 Volt 0.8 Amp 20 Amp IFSM | auf Bestellung 117822 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY269TR | Vishay | Rectifier Diode Switching 0.8A 400ns 2-Pin SOD-57 T/R | auf Bestellung 9453 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY296 | Diotec Semiconductor | Rectifier Diode Switching 100V 2A 500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY296 | Diotec Semiconductor | Rectifier Diode Switching 100V 2A 500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY296 | Diotec Semiconductor | Description: DIODE GEN PURP 100V 2A DO201 | auf Bestellung 1700 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY296 | Diotec Semiconductor | Rectifiers Diode, Fast, DO-201, 100V, 2A, 500ns | auf Bestellung 3400 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| BY296 | Diotec Semiconductor | Rectifier Diode Switching 100V 2A 500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY296 | DIOTEC SEMICONDUCTOR | BY296-DIO THT universal diodes | auf Bestellung 1080 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY296 | EIC | Rectifier Diode Switching 100V 2A 250ns 2-Pin DO-201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY296 | Diotec Semiconductor | Rectifier Diode Switching 100V 2A 500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY296 | Diotec Semiconductor | Rectifier Diode Switching 100V 2A 500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY297 | Diotec Semiconductor | Rectifier Diode Switching 200V 2A 500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY297 | DIOTEC SEMICONDUCTOR | BY297-DIO THT universal diodes | auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY297 | Diotec Semiconductor | Rectifier Diode Switching 200V 2A 500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY297 | EIC | Rectifier Diode Switching 200V 2A 250ns 2-Pin DO-201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY297 | Diotec Semiconductor | Description: DIODE GEN PURP 200V 2A Packaging: Tape & Reel (TR) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 2A Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY297 | Taiwan Semiconductor | Rectifiers 2A,200V,FASTSWITCH,PLASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY297 | Diotec Semiconductor | Rectifier Diode Switching 200V 2A 500ns 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY297 | Diotec Semiconductor | Description: DIODE GEN PURP 200V 2A DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY297 | Diotec Semiconductor | Rectifiers Diode, Fast, DO-201, 200V, 2A, 150C | Produkt ist nicht verfügbar | |||||||||||||||||
| BY297 R0 | Taiwan Semiconductor | Rectifiers 2A,200V,FASTSWITCH,PLASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY297P-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 200V 2A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY298 | EIC | Rectifier Diode Switching 400V 2A 250ns 2-Pin DO-201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY298 | Diotec Semiconductor | Diode Switching 400V 2A 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY298 | Diotec Semiconductor AG | Description: Diode, Fast, DO-201, 400V, 2A Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY298 | Taiwan Semiconductor | Rectifiers 2A,400V,FASTSWITCH,PLASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY298 | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 2A; Ammo Pack; Ifsm: 70A; DO201; Ir: 5uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 2A Max. load current: 20A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: DO201 Max. forward voltage: 1.3V Max. forward impulse current: 70A Leakage current: 5µA Kind of package: Ammo Pack Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| BY298 | DC COMPONENTS | Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 2A; Ammo Pack; Ifsm: 70A; DO15; 150ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: DO15 Max. forward voltage: 1.3V Max. forward impulse current: 70A Kind of package: Ammo Pack | Produkt ist nicht verfügbar | |||||||||||||||||
| BY298 | Diotec Semiconductor | Description: DIODE GEN PURP 400V 2A Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: DO-201 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY298 | Diotec Semiconductor | Rectifiers Diode, Fast, DO-201, 400V, 2A, 150C | auf Bestellung 1700 Stücke: Lieferzeit 130-144 Tag (e) |
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| BY298 | DC COMPONENTS | Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 2A; Ammo Pack; Ifsm: 70A; DO15; 150ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: DO15 Max. forward voltage: 1.3V Max. forward impulse current: 70A Kind of package: Ammo Pack Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| BY298 | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 2A; Ammo Pack; Ifsm: 70A; DO201; Ir: 5uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 2A Max. load current: 20A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: DO201 Max. forward voltage: 1.3V Max. forward impulse current: 70A Leakage current: 5µA Kind of package: Ammo Pack | Produkt ist nicht verfügbar | |||||||||||||||||
| BY298 R0 | Taiwan Semiconductor | Rectifiers 2A,400V,FASTSWITCH,PLASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY298 Diode Produktcode: 84641 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||||
| BY298P-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 400V 2A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 28pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-201AD Operating Temperature - Junction: -50°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V | Produkt ist nicht verfügbar | |||||||||||||||||
| BY299 | DC COMPONENTS | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 70A; DO15; 500ns Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 70A Case: DO15 Kind of package: Ammo Pack Max. forward voltage: 1.3V Features of semiconductor devices: fast switching Mounting: THT Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 0.5µs Anzahl je Verpackung: 25 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| BY299 | DC COMPONENTS | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 70A; DO15; 500ns Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 70A Case: DO15 Kind of package: Ammo Pack Max. forward voltage: 1.3V Features of semiconductor devices: fast switching Mounting: THT Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 0.5µs | Produkt ist nicht verfügbar | |||||||||||||||||
| BY299 | Taiwan Semiconductor | Rectifiers 2A,800V,FASTSWITCH,PLASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY299 | LGE | 2A; 800V; packaging: ammo; BY299 diode rectifying DP BY299 Anzahl je Verpackung: 500 Stücke | auf Bestellung 400 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY299 | Diotec Semiconductor | Diode Switching 800V 2A 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY299 Produktcode: 54701 | Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle | Produkt ist nicht verfügbar | ||||||||||||||||||
| BY299 | Diotec Semiconductor | Description: DIODE FR DO-201 800V 2A | auf Bestellung 1700 Stücke: Lieferzeit 21-28 Tag (e) |
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| BY299 | Diotec Semiconductor | Rectifiers Diode, Fast, DO-201, 800V, 2A, 150C | auf Bestellung 3378 Stücke: Lieferzeit 14-28 Tag (e) |
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| BY299 | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 70A; DO201; Ir: 5uA Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 70A Case: DO201 Kind of package: Ammo Pack Max. forward voltage: 1.3V Features of semiconductor devices: fast switching Mounting: THT Max. load current: 20A Semiconductor structure: single diode Leakage current: 5µA Type of diode: rectifying Reverse recovery time: 0.5µs Anzahl je Verpackung: 5 Stücke | auf Bestellung 2780 Stücke: Lieferzeit 7-14 Tag (e) |
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| BY299 | DIOTEC SEMICONDUCTOR | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 70A; DO201; Ir: 5uA Max. off-state voltage: 0.8kV Load current: 2A Max. forward impulse current: 70A Case: DO201 Kind of package: Ammo Pack Max. forward voltage: 1.3V Features of semiconductor devices: fast switching Mounting: THT Max. load current: 20A Semiconductor structure: single diode Leakage current: 5µA Type of diode: rectifying Reverse recovery time: 0.5µs | auf Bestellung 2780 Stücke: Lieferzeit 14-21 Tag (e) |
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| BY299 | Diotec Semiconductor | Diode Switching 800V 2A 2-Pin DO-201 Ammo | Produkt ist nicht verfügbar | |||||||||||||||||
| BY299 | Diotec Semiconductor | Diode Switching 800V 2A 2-Pin DO-201 Ammo | auf Bestellung 3400 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| BY299 | EIC | Fast Recovery Rectifier Diodes | Produkt ist nicht verfügbar | |||||||||||||||||
| BY299 R0 | Taiwan Semiconductor | Rectifiers 2A,800V,FASTSWITCH,PLASTIC RECTIFIER | Produkt ist nicht verfügbar | |||||||||||||||||
| BY299BULK | EIC SEMICONDUCTOR INC. | Description: DIODE GEN PURP 800V 2A DO15 | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| BY299P-E3 | Vishay Semiconductors | Rectifiers 2A,800V,500NS,FS,PLAS RECT,DO-201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY299P-E3/54 | Vishay | Rectifier Diode Switching 800V 2A 1000ns 2-Pin DO-201AD T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| BY299P-E3/54 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 2A DO201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY299P-E3/54 | Vishay Semiconductors | Rectifiers RECOMMENDED ALT 625-RGP30K-E3 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY299P-E3/73 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 800V 2A DO201AD | Produkt ist nicht verfügbar | |||||||||||||||||
| BY299P-E3/73 | Vishay Semiconductors | Rectifiers RECOMMENDED ALT 625-RGP30K-E3/73 | Produkt ist nicht verfügbar | |||||||||||||||||
| BY29E100 | auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| BY29G1GFSBIG(Y) | BYTe Semiconductor | Description: 1 GBIT, 3.0V (2.7V TO 3.6V), -40 Packaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 64-TFBGA (11x13) Memory Interface: CFI Memory Organization: 128M x 8 | Produkt ist nicht verfügbar |