Produkte > GHX
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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GHXS010A060S-D1 | Global Power Technologies Group | Description: MOD SBD BRIDGE 600V 10A SOT227 | auf Bestellung 22 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS010A060S-D1E | Global Power Technologies Group | Description: MOD SBD BRIDGE 600V 10A SOT227 | auf Bestellung 21 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS010A060S-D3 | SemiQ | Description: DIODE MOD SIC SCHOT 600V SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V | auf Bestellung 54 Stücke: Lieferzeit 21-28 Tag (e) |
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GHXS010A060S-D3 | SemiQ | Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 10A | auf Bestellung 7 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS010A060S-D4 | Global Power Technologies Group | Description: DIODE SBD SCHOTT 600V 10A SOT227 | auf Bestellung 23 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS015A120S-D1 | Global Power Technologies Group | Description: MOD SBD BRIDGE 1200V 15A SOT227 | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS015A120S-D1E | Global Power Technologies Group | Description: MOD SBD BRIDGE 1200V 15A SOT227 | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS015A120S-D3 | SemiQ | Description: DIODE SCHOT SBD 1200V 15A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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GHXS015A120S-D3 | SemiQ | Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 15A | auf Bestellung 10 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||
GHXS015A120S-D4 | Global Power Technologies Group | Description: DIODE SCHOT SBD 1200V 15A SOT227 | auf Bestellung 252 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS020A060S-D1 | Global Power Technologies Group | Description: MOD SBD BRIDGE 600V 20A SOT227 | auf Bestellung 22 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS020A060S-D1E | Global Power Technologies Group | Description: MOD SBD BRIDGE 600V 20A SOT227 | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS020A060S-D3 | SemiQ | Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 20A | auf Bestellung 10 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS020A060S-D3 | SemiQ | Description: DIODE SBD SHOTT 600V 20A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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GHXS020A060S-D4 | Global Power Technologies Group | Description: DIODE SBD SHOTT 600V 20A SOT227 | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS030A060S-D1 | Global Power Technologies Group | Description: MOD SBD BRIDGE 600V 30A SOT227 | auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS030A060S-D1E | SemiQ | Description: BRIDGE RECT 1P 600V 30A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide Schottky Supplier Device Package: SOT-227 Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 30 A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V | auf Bestellung 34 Stücke: Lieferzeit 21-28 Tag (e) |
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GHXS030A060S-D1E | SemiQ | Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 600V 30A | auf Bestellung 47 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS030A060S-D3 | SemiQ | Description: DIODE MOD SIC SCHOT 600V SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||
GHXS030A060S-D3 | SemiQ | Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 30A | auf Bestellung 28 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS030A060S-D4 | Global Power Technologies Group | Description: DIODE SBD SHOTT 600V 30A SOT227 | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS030A120S-D1 | Global Power Technologies Group | Description: MOD SBD BRIDGE 1200V 30A SOT227 | auf Bestellung 23 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS030A120S-D1E | SemiQ | Description: BRIDGE RECT 1P 1.2KV 30A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide Schottky Supplier Device Package: SOT-227 Part Status: Active Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 30 A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | auf Bestellung 15 Stücke: Lieferzeit 21-28 Tag (e) |
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GHXS030A120S-D1E | SemiQ | Discrete Semiconductor Modules SiC SBD Rectifier Bridge Power Module 1200V 30A | auf Bestellung 4 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS030A120S-D3 | SemiQ | Description: DIODE SCHOTKY 1200V 30A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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GHXS030A120S-D3 | SemiQ | Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200V 30A | auf Bestellung 16 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS030A120S-D4 | Global Power Technologies Group | Description: DIODE SCHOTKY 1200V 30A SOT227 | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS045A120S-D1 | Global Power Technologies Group | Description: MOD SBD BRIDGE 1200V 45A SOT227 | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS045A120S-D1E | Global Power Technologies Group | Description: MOD SBD BRIDGE 1200V 45A SOT227 | auf Bestellung 21 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS045A120S-D3 | SemiQ | Discrete Semiconductor Modules SiC SBD Parallel Power Module 1200A 45A | auf Bestellung 20 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS045A120S-D3 | SemiQ | Description: DIODE SCHOT SBD 1200V 45A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 45A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 45 A Current - Reverse Leakage @ Vr: 300 µA @ 1200 V | auf Bestellung 28 Stücke: Lieferzeit 21-28 Tag (e) |
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GHXS045A120S-D4 | Global Power Technologies Group | Description: DIODE SCHOT SBD 1200V 45A SOT227 | auf Bestellung 21 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS050A060S-D3 | SemiQ | Description: DIODE SCHOTT SBD 600V 50A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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GHXS050A060S-D3 | SemiQ | Discrete Semiconductor Modules SiC SBD Parallel Power Module 600V 50A | auf Bestellung 11 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS050A060S-D4 | Global Power Technologies Group | Description: DIODE SCHOTT SBD 600V 50A SOT227 | auf Bestellung 23 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS050A170S-D3 | SemiQ | Description: 1700V 50A SIC SBD PARALLEL | auf Bestellung 24 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS050A170S-D3 | SemiQ | Discrete Semiconductor Modules SiC SBD Parallel Power Module 1700V 50A | auf Bestellung 17 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS050B065S-D3 | SemiQ | Description: DIODE MOD SIC SCHOT 650V SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 95A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 50 A Current - Reverse Leakage @ Vr: 125 µA @ 650 V | auf Bestellung 9 Stücke: Lieferzeit 21-28 Tag (e) |
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GHXS050B065S-D3 | SemiQ | Discrete Semiconductor Modules SiC SBD 650V 50A SiC Power Modules | auf Bestellung 8 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS050B120S-D3 | SemiQ | Description: SIC SBD PARALLEL POWER MODULE 12 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 101A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 50 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V | auf Bestellung 6 Stücke: Lieferzeit 21-28 Tag (e) |
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GHXS050B120S-D3 | SemiQ | Discrete Semiconductor Modules SiC SBD 1200V 50A SiC Power Modules | auf Bestellung 14 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS060A120S-D3 | Global Power Technologies Group | Description: MOD SBD BRIDGE 1200V 60A SOT227 | Produkt ist nicht verfügbar | |||||||||||||||
GHXS060A120S-D4 | Global Power Technologies Group | Description: DIODE SCHOT SBD 1200V 60A SOT227 | auf Bestellung 23 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
GHXS060B120S-D3 | SemiQ | Discrete Semiconductor Modules SiC SBD Power Dual Diode Module 1200A 60A | auf Bestellung 9 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS060B120S-D3 | SemiQ | Description: DIODE MOD SIC 1200V 161A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 161A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 60 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | auf Bestellung 28 Stücke: Lieferzeit 21-28 Tag (e) |
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GHXS100B065S-D3 | SemiQ | Discrete Semiconductor Modules SiC SBD 650V 100A SiC Power Modules | auf Bestellung 3 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS100B065S-D3 | SemiQ | Description: DIODE MOD SIC 650V 193A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 193A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 100 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | auf Bestellung 44 Stücke: Lieferzeit 21-28 Tag (e) |
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GHXS100B120S-D3 | SemiQ | Discrete Semiconductor Modules SiC SBD 1200V 100A SiC Power Modules | auf Bestellung 18 Stücke: Lieferzeit 14-28 Tag (e) |
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GHXS100B120S-D3 | SemiQ | Description: DIODE MOD SIC 1200V 198A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 198A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 100 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V | auf Bestellung 121 Stücke: Lieferzeit 21-28 Tag (e) |
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