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PJE138K-AU_R1_000A1Panjit International Inc.Description: SOT-523, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.2 EUR
8000+0.19 EUR
12000+0.18 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE138K-AU_R1_000A1PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 7894 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.8 EUR
10+0.54 EUR
100+0.27 EUR
1000+0.23 EUR
4000+0.2 EUR
8000+0.18 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE138K-AU_R1_000A1Panjit International Inc.Description: SOT-523, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 35327 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.75 EUR
36+0.58 EUR
100+0.35 EUR
500+0.32 EUR
1000+0.23 EUR
2000+0.2 EUR
Mindestbestellmenge: 28 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE138K-R1-00001PanjitMOSFETs SOT523 N CHAN 50V
Produkt ist nicht verfügbar
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PJE138KTB89_R1_00701PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFET, 50 V, 350 mA
auf Bestellung 3040 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.87 EUR
10+0.63 EUR
100+0.36 EUR
500+0.24 EUR
1000+0.18 EUR
2000+0.17 EUR
4000+0.14 EUR
Mindestbestellmenge: 4 Stücke
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PJE138K_R1_00001PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 20642 Stücke:
Lieferzeit 10-14 Tag (e)
11+0.32 EUR
17+0.2 EUR
100+0.13 EUR
500+0.092 EUR
1000+0.082 EUR
2000+0.071 EUR
4000+0.063 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE138K_R1_00001Panjit International Inc.Description: SOT-523, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.1 EUR
8000+0.082 EUR
12000+0.079 EUR
20000+0.074 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE138K_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 835 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.24 EUR
556+0.15 EUR
835+0.1 EUR
Mindestbestellmenge: 358 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE138K_R1_00001Panjit International Inc.Description: SOT-523, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 223mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 21295 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.44 EUR
69+0.31 EUR
151+0.14 EUR
500+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 48 Stücke
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PJE138L_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 25460 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.11 EUR
26+0.83 EUR
100+0.46 EUR
500+0.31 EUR
1000+0.24 EUR
2000+0.2 EUR
Mindestbestellmenge: 19 Stücke
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PJE138L_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.2 EUR
8000+0.19 EUR
Mindestbestellmenge: 4000 Stücke
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PJE138L_R1_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.92 EUR
10+0.68 EUR
100+0.38 EUR
1000+0.2 EUR
4000+0.17 EUR
8000+0.13 EUR
Mindestbestellmenge: 4 Stücke
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PJE24HWS-R1-00001PanjitESD Suppressors / TVS Diodes SOD-323/TVS/ESD/SOD/TEA-06A
Produkt ist nicht verfügbar
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PJE24HWS_R1_00001PanjitESD Protection Diodes / TVS Diodes 24V,ESD Protection,SOD-323,UNI
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5 Stücke
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PJE24HWS_R1_00001Panjit International Inc.Description: SINGLE LINE TVS DIODE FOR ESD PR
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 45V
Voltage - Breakdown (Min): 26V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Capacitance @ Frequency: 100pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.8 EUR
36+0.6 EUR
100+0.37 EUR
500+0.25 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE24HWS_R1_00001Panjit International Inc.Description: SINGLE LINE TVS DIODE FOR ESD PR
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 14A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26V
Voltage - Clamping (Max) @ Ipp: 45V
Power Line Protection: No
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.17 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE24VM5FN2-R1-00001PanjitESD Protection Diodes / TVS Diodes DFN 2L/TVS/ESD/DFN/TEA-01FG
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJE24VM5FN2-R1-00501PanjitArray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJE24VM5FN2_R1_00001Panjit International Inc.Description: ESD PROTECTION
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 100W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 25V
Unidirectional Channels: 1
Supplier Device Package: 2-DFN (1x0.6)
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 50pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 7846 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
48+0.44 EUR
100+0.21 EUR
500+0.18 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE24VM5FN2_R1_00001PanjitESD Protection Diodes / TVS Diodes 24V,ESD Protection,DFN 2L,UNI
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE24VM5FN2_R1_00001Panjit International Inc.Description: ESD PROTECTION
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 100W
Voltage - Clamping (Max) @ Ipp: 40V
Voltage - Breakdown (Min): 25V
Unidirectional Channels: 1
Supplier Device Package: 2-DFN (1x0.6)
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 50pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE28VM2FN2-R1-00001PanjitESD Protection Diodes / TVS Diodes DFN 2L/TVS/ESD/DFN/TEA-02FG
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJE28VM2FN2-R1-00501PanjitArray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJE28VM2FN2_R1_00001Panjit International Inc.Description: TVS DIODE 28VWM 55VC 2DFN
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 165W
Voltage - Clamping (Max) @ Ipp: 55V
Voltage - Breakdown (Min): 29V
Unidirectional Channels: 1
Supplier Device Package: 2-DFN (1x0.6)
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 25pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE28VM2FN2_R1_00001PanjitESD Protection Diodes / TVS Diodes 28V,ESD Protection,DFN 2L,UNI
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6 Stücke
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PJE28VM2FN2_R1_00001Panjit International Inc.Description: TVS DIODE 28VWM 55VC 2DFN
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 165W
Voltage - Clamping (Max) @ Ipp: 55V
Voltage - Breakdown (Min): 29V
Unidirectional Channels: 1
Supplier Device Package: 2-DFN (1x0.6)
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 25pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJE28VM2FN2_R1_00501PanJit SemiconductorCategory: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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PJE28VM2TS_R1_00001PanJit SemiconductorCategory: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE36HWS-R1-00001PanjitPanjit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJE36HWS_R1_00001Panjit International Inc.Description: SINGLE LINE TVS DIODE FOR ESD PR
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 36V (Max)
Current - Peak Pulse (10/1000µs): 8.5A (8/20µs)
Capacitance @ Frequency: 75pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 70V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE36HWS_R1_00001PanjitESD Protection Diodes / TVS Diodes 36V,ESD Protection,SOD-323,UNI
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7 Stücke
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PJE36HWS_R1_00001Panjit International Inc.Description: SINGLE LINE TVS DIODE FOR ESD PR
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 70V
Voltage - Breakdown (Min): 40V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 36V (Max)
Current - Peak Pulse (10/1000µs): 8.5A (8/20µs)
Capacitance @ Frequency: 75pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
auf Bestellung 4880 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.92 EUR
34+0.63 EUR
100+0.32 EUR
500+0.26 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE48HWS_R1_00001PanjitESD Protection Diodes / TVS Diodes 48V,ESD Protection,SOD-323,UNI
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5 Stücke
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PJE48HWS_R1_00001Panjit International Inc.Description: SINGLE LINE TVS DIODE FOR ESD PR
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 80V
Voltage - Breakdown (Min): 53.3V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 48V (Max)
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE48HWS_R1_00001Panjit International Inc.Description: SINGLE LINE TVS DIODE FOR ESD PR
Part Status: Active
Power Line Protection: No
Voltage - Clamping (Max) @ Ipp: 80V
Voltage - Breakdown (Min): 53.3V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 48V (Max)
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Capacitance @ Frequency: 60pF @ 1MHz (Max)
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
auf Bestellung 2688 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.9 EUR
34+0.63 EUR
100+0.32 EUR
500+0.26 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 24 Stücke
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PJE5UFN10A-AU_R1_000A1Panjit International Inc.Description: TVS DIODE 5VWM 13VC DFN251010L
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510-10L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2252 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.57 EUR
60+0.35 EUR
100+0.21 EUR
500+0.17 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 38 Stücke
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PJE5UFN10A-AU_R1_000A1PanJit SemiconductorCategory: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4
Application: automotive industry
Case: DFN2510
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.6pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE5UFN10A-AU_R1_000A1Panjit International Inc.Description: TVS DIODE 5VWM 13VC DFN251010L
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510-10L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJE5UFN10A-AU_R1_000A1PanjitESD Protection Diodes / TVS Diodes 5V,ESD Protection,DFN2510-10L,UNI
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6 Stücke
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PJE5UFN10A-AU_R2_000A1PanjitESD Protection Diodes / TVS Diodes 5V ESD Protection UNI
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PJE5UFN10A_R1_00001PanjitESD Protection Diodes / TVS Diodes 5V,ESD Protection,DFN2510-10L,UNI
auf Bestellung 9614 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.56 EUR
10+0.39 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.14 EUR
5000+0.12 EUR
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PJE5UFN10A_R1_00001Panjit International Inc.Description: TVS DIODE 5VWM 13VC DFN251010L
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510-10L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Part Status: Active
auf Bestellung 7785 Stücke:
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40+0.52 EUR
57+0.37 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.14 EUR
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PJE5UFN10A_R1_00001Panjit International Inc.Description: TVS DIODE 5VWM 13VC DFN251010L
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet, USB
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN2510-10L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Part Status: Active
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5000+0.11 EUR
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PJE5UFN10A_R1_00001PanJit SemiconductorCategory: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510-10; Ch: 4
Case: DFN2510-10
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.8pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
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PJE5V0U8TB-AU_R1_000A1PanjitESD Protection Diodes / TVS Diodes 5V,ESD Protection,SOT-523,UNI
auf Bestellung 5707 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.82 EUR
10+0.81 EUR
100+0.69 EUR
500+0.62 EUR
1000+0.55 EUR
4000+0.21 EUR
8000+0.14 EUR
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PJE5V0U8TB6_R1_00001PanjitESD Protection Diodes / TVS Diodes 5V,ESD Protection,SOT-563,UNI
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PJE5V0U8TB6_R1_00001Panjit International Inc.Description: TVS DIODE 5VWM 35VC SOT563
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 35V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: SOT-563
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.8pF @ 1MHz (Max)
Applications: DVI, Ethernet, USB
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 3994 Stücke:
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29+0.74 EUR
47+0.45 EUR
100+0.29 EUR
500+0.21 EUR
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2000+0.17 EUR
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PJE5V0U8TB6_R1_00001Panjit International Inc.Description: TVS DIODE 5VWM 35VC SOT563
Part Status: Active
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 35V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 4
Supplier Device Package: SOT-563
Voltage - Reverse Standoff (Typ): 5V (Max)
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.8pF @ 1MHz (Max)
Applications: DVI, Ethernet, USB
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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PJE5V0U8TB_R1_00001Panjit International Inc.Description: SOT-523, TVS/ESD
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-523 Flat Leads
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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PJE5V0U8TB_R1_00001Panjit International Inc.Description: SOT-523, TVS/ESD
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-523 Flat Leads
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 15V
Power Line Protection: No
Part Status: Active
auf Bestellung 3171 Stücke:
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23+0.92 EUR
31+0.69 EUR
100+0.43 EUR
500+0.3 EUR
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2000+0.2 EUR
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PJE8400-R1-00001PanjitMOSFET
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PJE8400_R1_00001Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
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PJE8400_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJE8400_R1_00001PanjitMOSFETs 20V N-Channel Enhancement Mode MOSFET
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PJE8400_R1_00001Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
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PJE8401_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJE8401_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
auf Bestellung 3073 Stücke:
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33+0.65 EUR
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PJE8401_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 130mOhm @ 900mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Part Status: Active
Produkt ist nicht verfügbar
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PJE8402-AU-R1-000A1PanjitArray
Produkt ist nicht verfügbar
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PJE8402_R1_00001Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4,5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 15131 Stücke:
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25+0.83 EUR
36+0.58 EUR
100+0.3 EUR
500+0.26 EUR
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PJE8402_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 2.8A
Drain current: 0.7A
Gate charge: 1.6nC
Power dissipation: 0.3W
On-state resistance: 0.4Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJE8402_R1_00001PanjitMOSFETs 20V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 5507 Stücke:
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5+0.83 EUR
10+0.58 EUR
100+0.36 EUR
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1000+0.21 EUR
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PJE8402_R1_00001Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4,5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
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4000+0.18 EUR
12000+0.15 EUR
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PJE8403_R1_00001PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.4A
Drain current: -0.6A
Gate charge: 2.2nC
Power dissipation: 0.3W
On-state resistance: 0.6Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
auf Bestellung 3975 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.32 EUR
417+0.2 EUR
667+0.13 EUR
807+0.11 EUR
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PJE8403_R1_00001PanjitMOSFETs 20V P-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 6034 Stücke:
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7+0.52 EUR
11+0.32 EUR
100+0.2 EUR
500+0.14 EUR
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PJE8403_R1_00001Panjit International Inc.Description: SOT-523, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V
auf Bestellung 39498 Stücke:
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PJE8403_R1_00001Panjit International Inc.Description: SOT-523, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 151 pF @ 10 V
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4000+0.12 EUR
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PJE8404_R1_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
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PJE8404_R1_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-523
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
auf Bestellung 2360 Stücke:
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PJE8404_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Gate-source voltage: 8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJE8405_R1_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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PJE8405_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Gate-source voltage: 8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJE8405_R1_00001Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 137 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
auf Bestellung 3968 Stücke:
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23+0.92 EUR
30+0.7 EUR
100+0.44 EUR
500+0.3 EUR
1000+0.23 EUR
2000+0.2 EUR
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PJE8405_R1_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 3425 Stücke:
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10+0.44 EUR
100+0.27 EUR
500+0.2 EUR
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2000+0.17 EUR
4000+0.13 EUR
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PJE8406TB89_R1_00701PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89
Case: SC89
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJE8406_R1_00001Panjit International Inc.Description: SOT-523, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
auf Bestellung 12644 Stücke:
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40+0.52 EUR
64+0.33 EUR
102+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2000+0.12 EUR
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PJE8406_R1_00001Panjit International Inc.Description: SOT-523, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.92 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
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4000+0.11 EUR
8000+0.096 EUR
12000+0.092 EUR
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PJE8406_R1_00001PanjitMOSFETs 20V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 33396 Stücke:
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7+0.54 EUR
10+0.33 EUR
100+0.21 EUR
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4000+0.1 EUR
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PJE8407_R1_00001PanjitMOSFETs 20V P-Channel Enhancement Mode MOSFET
auf Bestellung 3640 Stücke:
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7+0.5 EUR
11+0.31 EUR
100+0.19 EUR
500+0.14 EUR
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PJE8407_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
auf Bestellung 2053 Stücke:
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40+0.52 EUR
66+0.32 EUR
105+0.2 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.12 EUR
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PJE8407_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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PJE8407_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJE8408_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1A
Drain current: 0.5A
Gate charge: 1.4nC
Power dissipation: 0.3W
On-state resistance: 3Ω
Gate-source voltage: ±10V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
auf Bestellung 3480 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.19 EUR
695+0.12 EUR
807+0.11 EUR
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PJE8408_R1_00001Panjit International Inc.Description: SOT-523, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
auf Bestellung 17368 Stücke:
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77+0.27 EUR
120+0.18 EUR
248+0.084 EUR
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PJE8408_R1_00001PanjitMOSFETs 20V N-Channel Enhancement Mode MOSFET
auf Bestellung 165650 Stücke:
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8+0.43 EUR
13+0.26 EUR
100+0.17 EUR
500+0.12 EUR
1000+0.1 EUR
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PJE8408_R1_00001Panjit International Inc.Description: SOT-523, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-523 Flat Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
auf Bestellung 16000 Stücke:
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4000+0.08 EUR
8000+0.077 EUR
12000+0.046 EUR
Mindestbestellmenge: 4000 Stücke
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PJE8412_R1_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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PJE8412_R1_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJE8428_R1_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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PJE8428_R1_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
auf Bestellung 1278 Stücke:
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24+0.88 EUR
35+0.62 EUR
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500+0.25 EUR
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PJE8428_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
Produkt ist nicht verfügbar
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PJE8438-R1-00001PanjitMOSFET SOT-523/MOS/SOT/NFET-50TBMN
Produkt ist nicht verfügbar
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PJE8438_R1_00001Panjit International Inc.Description: 50V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
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4000+0.17 EUR
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PJE8438_R1_00001PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 3771 Stücke:
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5+0.83 EUR
10+0.58 EUR
100+0.36 EUR
500+0.25 EUR
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4000+0.17 EUR
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PJE8438_R1_00001Panjit International Inc.Description: 50V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
auf Bestellung 4345 Stücke:
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27+0.8 EUR
38+0.57 EUR
100+0.36 EUR
500+0.24 EUR
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PJE8439_R1_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
auf Bestellung 1899 Stücke:
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44+0.48 EUR
65+0.32 EUR
134+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
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PJE8439_R1_00001PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 3854 Stücke:
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7+0.52 EUR
10+0.35 EUR
100+0.17 EUR
500+0.14 EUR
4000+0.088 EUR
8000+0.083 EUR
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PJE8439_R1_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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PJE8472B_R1_00001PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 3880 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.24 EUR
10+0.86 EUR
100+0.55 EUR
500+0.33 EUR
1000+0.25 EUR
2000+0.21 EUR
4000+0.14 EUR
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PJE8472B_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Case: SOT523
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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