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WMOBussmann / EatonSpecialty Fuses BUSS HEAT LIMITER
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WMO04N65C2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 29W
Technology: WMOS™ C2
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WMO04N70C2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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 Mindestbestellmenge: 504 Stücke
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WMO053NV8HG---Транзистори
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WMO053NV8HGSWayon Electronics Co.,Ltd.Транзистори
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5+1.3 EUR
Mindestbestellmenge: 5 Stücke
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WMO05N100C2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 11A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO05N65MMWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO07N60C2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 162 Stücke:
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62+1.38 EUR
153+0.56 EUR
162+0.52 EUR
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WMO07N60C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 9A
Gate charge: 5.2nC
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WMO07N65C2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 164 Stücke:
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95+0.9 EUR
158+0.54 EUR
164+0.51 EUR
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WMO07N65C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO07N80M3WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO080N10HG2---Транзистори
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WMO08N60C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO08N65C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO08N65C4Wayon Electronics Co.,Ltd.MOSFET N-Channel 650 V TO-252 Транзистори
auf Bestellung 2290 Stücke:
Lieferzeit 14-21 Tag (e)
7+0.92 EUR
Mindestbestellmenge: 7 Stücke
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WMO090NV6LG4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 70A; Idm: 280A; 73.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 70A
Pulsed drain current: 280A
Power dissipation: 73.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 127 Stücke:
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97+0.88 EUR
127+0.67 EUR
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WMO1/2S-110RJA5Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO1/2S-1K1JA5Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO1/2S-22RJA5TT ELECTRONICSCategory: THT Resistors
Description: Resistor: metal oxide; 22Ω; ±5%; axial; L: 7.5mm; Ø: 3mm
Type of resistor: metal oxide
Resistance: 22Ω
Tolerance: ±5%
Leads: axial
Length: 7.5mm
Diameter: 3mm
auf Bestellung 5000 Stücke:
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2874+0.04 EUR
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WMO1/2S-33KJA5Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO1/2S-39RJA5Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO1/2S-5K1JA5Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO1/2S-62KJA5Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO1/2S-82KJA5Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO1/2S-9K1JA5Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO10N50C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 45W
Case: TO252
Mounting: SMD
Drain-source voltage: 500V
Gate-source voltage: ±30V
Kind of package: reel; tape
On-state resistance: 0.63Ω
Pulsed drain current: 16A
Gate charge: 7.3nC
Technology: WMOS™ C4
Drain current: 4.8A
Kind of channel: enhancement
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WMO10N60C2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1559 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.63 EUR
152+0.56 EUR
171+0.5 EUR
185+0.46 EUR
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WMO10N60C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
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WMO10N65C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
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WMO10N65EMWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
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WMO10N70C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
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WMO10N70EMWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
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WMO10N80M3WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2126 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.9 EUR
103+0.83 EUR
108+0.79 EUR
250+0.71 EUR
Mindestbestellmenge: 95 Stücke
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WMO11N60C2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2041 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.64 EUR
138+0.62 EUR
Mindestbestellmenge: 132 Stücke
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WMO11N65C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 2.1nC
auf Bestellung 385 Stücke:
Lieferzeit 14-21 Tag (e)
74+1.15 EUR
97+0.88 EUR
112+0.76 EUR
122+0.7 EUR
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WMO11N65SRWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 13.7nC
Produkt ist nicht verfügbar
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WMO11N80M3WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO120N04TSWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 96W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 96W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.98 EUR
146+0.58 EUR
161+0.52 EUR
183+0.46 EUR
250+0.42 EUR
Mindestbestellmenge: 88 Stücke
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WMO12N80M3WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 86W
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 620mΩ
auf Bestellung 1066 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.65 EUR
35+2.43 EUR
40+2.13 EUR
46+1.89 EUR
100+1.59 EUR
250+1.45 EUR
500+1.33 EUR
1000+1.27 EUR
Mindestbestellmenge: 33 Stücke
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WMO12P05T1WAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; Idm: -48A; 39W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.58 EUR
340+0.25 EUR
Mindestbestellmenge: 148 Stücke
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WMO12P06TSWAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 62.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 4557 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.68 EUR
350+0.24 EUR
443+0.19 EUR
468+0.18 EUR
527+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 125 Stücke
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WMO13N10TSWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 52A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 39W
Case: TO252
Mounting: SMD
Pulsed drain current: 52A
Gate charge: 4nC
Drain current: 13A
Kind of channel: enhancement
Drain-source voltage: 100V
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.13Ω
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.7 EUR
291+0.3 EUR
385+0.23 EUR
432+0.2 EUR
486+0.18 EUR
Mindestbestellmenge: 122 Stücke
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WMO13N50C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO13N65EMWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO14N60C2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 891 Stücke:
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162+0.52 EUR
165+0.51 EUR
174+0.49 EUR
Mindestbestellmenge: 162 Stücke
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WMO14N60C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO14N65C2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO14N65C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Power dissipation: 85W
Gate charge: 13nC
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N10T1WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 822 Stücke:
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107+0.8 EUR
260+0.33 EUR
343+0.25 EUR
388+0.21 EUR
432+0.2 EUR
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WMO15N60C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO15N65C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 26A
Power dissipation: 86W
Gate charge: 14.6nC
Drain current: 7.8A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N65F2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 335mΩ
Mounting: SMD
Gate charge: 14.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N60FDWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65FDWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65SRWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO17N25JNWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 36W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 6.5A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 98ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO18N20JNWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO252; 80ns
Case: TO252
Mounting: SMD
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
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WMO18N20T2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 83W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 11nC
auf Bestellung 29 Stücke:
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29+2.93 EUR
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WMO18N50C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 75W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 75W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO18N65EMWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO18P10TSWAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -18A; Idm: -72A; 70W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 79 Stücke:
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79+1.07 EUR
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WMO190N03TSWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 166.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2460 Stücke:
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99+0.87 EUR
165+0.51 EUR
184+0.46 EUR
207+0.42 EUR
250+0.37 EUR
1000+0.36 EUR
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WMO1S-120RJA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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 Mindestbestellmenge: 8 Stücke
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WMO1S-1K1JA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
Produkt ist nicht verfügbar
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WMO1S-33KJA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO1S-39RJA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO1S-5K1JA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO1S-62KJA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO1S-75RJA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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 Mindestbestellmenge: 9 Stücke
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WMO1S-82KJA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO1S-9K1JA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO20N65EMWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO240N10LG2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 30 Stücke:
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30+2.84 EUR
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WMO25N06TSWAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1828 Stücke:
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120+0.71 EUR
286+0.3 EUR
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424+0.2 EUR
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WMO25N50C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 135W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO25P03TSWAYONCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 235 Stücke:
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112+0.76 EUR
235+0.36 EUR
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WMO26N60C4WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 22.1nC
Produkt ist nicht verfügbar
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WMO26N65F2WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO2E395J000000BRWEETCategory: Audio polypropylene capacitors
Description: Capacitor: polypropylene; 3.9uF; ±5%; Ø34x58mm; Leads: axial; THT
Type of capacitor: polypropylene
Capacitance: 3.9µF
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø34x58mm
Leads: axial
Mounting: THT
Manufacturer series: WMO
Diameter: 34mm
Height: 58mm
Operating voltage: 250V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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WMO2E825J000000BRWEETCategory: Audio polypropylene capacitors
Description: Capacitor: polypropylene; 8.2uF; ±5%; Ø44x58mm; Leads: axial; THT
Type of capacitor: polypropylene
Capacitance: 8.2µF
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø44x58mm
Leads: axial
Mounting: THT
Manufacturer series: WMO
Diameter: 44mm
Height: 58mm
Operating voltage: 250V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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WMO2G104J000000BRWEETCategory: Audio polypropylene capacitors
Description: Capacitor: polypropylene; 100nF; ±5%; Ø20x21mm; Leads: axial; THT
Type of capacitor: polypropylene
Capacitance: 0.1µF
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø20x21mm
Leads: axial
Mounting: THT
Manufacturer series: WMO
Diameter: 20mm
Height: 21mm
Operating voltage: 400V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
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WMO2G105J000000BRWEETCategory: Audio polypropylene capacitors
Description: Capacitor: polypropylene; 1uF; ±5%; Ø30x58mm; Leads: axial; THT; WMO
Type of capacitor: polypropylene
Capacitance: 1µF
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø30x58mm
Leads: axial
Mounting: THT
Manufacturer series: WMO
Diameter: 30mm
Height: 58mm
Operating voltage: 400V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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WMO2G125J000000BRWEETCategory: Audio polypropylene capacitors
Description: Capacitor: polypropylene; 1.2uF; ±5%; Ø33x58mm; Leads: axial; THT
Type of capacitor: polypropylene
Capacitance: 1.2µF
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø33x58mm
Leads: axial
Mounting: THT
Manufacturer series: WMO
Diameter: 33mm
Height: 58mm
Operating voltage: 400V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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WMO2G255J000000BRWEETCategory: Audio polypropylene capacitors
Description: Capacitor: polypropylene; 2.5uF; ±5%; Ø39x58mm; Leads: axial; THT
Type of capacitor: polypropylene
Capacitance: 2.5µF
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø39x58mm
Leads: axial
Mounting: THT
Manufacturer series: WMO
Diameter: 39mm
Height: 58mm
Operating voltage: 400V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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WMO2G275J000000BRWEETCategory: Audio polypropylene capacitors
Description: Capacitor: polypropylene; 2.7uF; ±5%; Ø42x58mm; Leads: axial; THT
Type of capacitor: polypropylene
Capacitance: 2.7µF
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø42x58mm
Leads: axial
Mounting: THT
Manufacturer series: WMO
Diameter: 42mm
Height: 58mm
Operating voltage: 400V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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WMO2G335J000000BRWEETCategory: Audio polypropylene capacitors
Description: Capacitor: polypropylene; 3.3uF; ±5%; Ø46x58mm; Leads: axial; THT
Type of capacitor: polypropylene
Capacitance: 3.3µF
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø46x58mm
Leads: axial
Mounting: THT
Manufacturer series: WMO
Diameter: 46mm
Height: 58mm
Operating voltage: 400V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10 Stücke
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WMO2J103J000000BRWEETCategory: Audio polypropylene capacitors
Description: Capacitor: polypropylene; 10nF; ±5%; Ø11x21mm; Leads: axial; THT
Type of capacitor: polypropylene
Capacitance: 10nF
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø11x21mm
Leads: axial
Mounting: THT
Manufacturer series: WMO
Diameter: 11mm
Height: 21mm
Operating voltage: 630V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
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WMO2J105J000000BRWEETCategory: Audio polypropylene capacitors
Description: Capacitor: polypropylene; 1uF; ±5%; Ø33x58mm; Leads: axial; THT; WMO
Type of capacitor: polypropylene
Capacitance: 1µF
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø33x58mm
Leads: axial
Mounting: THT
Manufacturer series: WMO
Diameter: 33mm
Height: 58mm
Operating voltage: 630V
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WMO2J474J000000BRWEETCategory: Audio polypropylene capacitors
Description: Capacitor: polypropylene; 470nF; ±5%; Ø23x58mm; Leads: axial; THT
Type of capacitor: polypropylene
Capacitance: 0.47µF
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø23x58mm
Leads: axial
Mounting: THT
Manufacturer series: WMO
Diameter: 23mm
Height: 58mm
Operating voltage: 630V
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WMO2J564J000000BRWEETCategory: Audio polypropylene capacitors
Description: Capacitor: polypropylene; 560nF; ±5%; Ø26x58mm; Leads: axial; THT
Type of capacitor: polypropylene
Capacitance: 0.56µF
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø26x58mm
Leads: axial
Mounting: THT
Manufacturer series: WMO
Diameter: 26mm
Height: 58mm
Operating voltage: 630V
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WMO2J824J000000BRWEETCategory: Audio polypropylene capacitors
Description: Capacitor: polypropylene; 820nF; ±5%; Ø30x58mm; Leads: axial; THT
Type of capacitor: polypropylene
Capacitance: 0.82µF
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø30x58mm
Leads: axial
Mounting: THT
Manufacturer series: WMO
Diameter: 30mm
Height: 58mm
Operating voltage: 630V
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WMO2S-100RJA1TT ELECTRONICSCategory: THT Resistors
Description: Resistor: metal oxide; 100Ω; 2W; ±5%; axial; L: 12mm; Ø: 5mm
Power: 2W
Type of resistor: metal oxide
Resistance: 100Ω
Diameter: 5mm
Length: 12mm
Tolerance: ±5%
Leads: axial
auf Bestellung 28000 Stücke:
Lieferzeit 14-21 Tag (e)
1725+0.067 EUR
9000+0.064 EUR
Mindestbestellmenge: 1725 Stücke
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WMO2S-110KJA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO2S-110RJA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO2S-12RJA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO2S-1K1JA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO2S-20KJA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO2S-240RJA1Welwyn Components / TT ElectronicsMetal Oxide Resistors
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WMO2S-27KJITT Electronics/IRCDescription: WMO2S-27KJI
auf Bestellung 176000 Stücke:
Lieferzeit 10-14 Tag (e)
544+0.13 EUR
12000+0.12 EUR
24000+0.12 EUR
61000+0.11 EUR
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