| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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H11AA4M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 100%@10mA Collector-emitter voltage: 100V Case: DIP6 |
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MCH3205-TL | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 3A; 0.8W; SOT323 Mounting: SMD Kind of package: reel; tape Case: SOT323 Frequency: 380MHz Collector current: 3A Collector-emitter voltage: 80V Power dissipation: 0.8W Polarisation: bipolar Type of transistor: NPN |
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MC7805CDTG | ONSEMI |
 Category: Unregulated voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; tube; ±4% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 1A Case: DPAK Mounting: SMD Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 7...20V Manufacturer series: MC7800 |
Produkt ist nicht verfügbar |
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MC7805CDTRKG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 7...20V Manufacturer series: MC7800 |
Produkt ist nicht verfügbar |
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BAV23CLT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Reverse recovery time: 150ns Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 9A Kind of package: reel; tape |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS16LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAS16LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
auf Bestellung 2440 Stücke: Lieferzeit 14-21 Tag (e) |
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LM393DR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8 Operating voltage: 2...36V Mounting: SMT Case: SO8 Type of integrated circuit: comparator Number of comparators: 2 Kind of comparator: universal |
auf Bestellung 1685 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP785AH120T1G | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 10mA; SOT89; SMD Mounting: SMD Number of channels: 1 Case: SOT89 Output voltage: 1.2V Operating temperature: -40...85°C Manufacturer series: NCP785A Kind of voltage regulator: fixed; LDO; linear Tolerance: ±5% Output current: 10mA Type of integrated circuit: voltage regulator Input voltage: 25...450V |
Produkt ist nicht verfügbar |
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NCP785AH150T1G | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 10mA; SOT89; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 1.5V Output current: 10mA Case: SOT89 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±5% Number of channels: 1 Input voltage: 25...450V Manufacturer series: NCP785A |
Produkt ist nicht verfügbar |
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NCP785AH50T1G | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; SOT89; SMD; ±5% Mounting: SMD Number of channels: 1 Case: SOT89 Output voltage: 5V Operating temperature: -40...85°C Manufacturer series: NCP785A Kind of voltage regulator: fixed; LDO; linear Tolerance: ±5% Output current: 10mA Type of integrated circuit: voltage regulator Input voltage: 25...450V |
Produkt ist nicht verfügbar |
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NTD20P06LT4G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 26nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DPAK Drain-source voltage: -60V Drain current: -15.5A On-state resistance: 0.13Ω |
Produkt ist nicht verfügbar |
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| NTDV20P06LT4G-VF01 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK Type of transistor: P-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Mounting: SMD Case: DPAK Drain-source voltage: 60V Drain current: 15.5A On-state resistance: 143mΩ |
Produkt ist nicht verfügbar |
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MC78L12ACPG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 12V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 14.5...27V Manufacturer series: MC78L00A |
auf Bestellung 1651 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD9N25TM-F080 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.7A Pulsed drain current: 29.6A Power dissipation: 55W Case: DPAK Gate-source voltage: ±30V On-state resistance: 420mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FQU9N25TU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.7A Pulsed drain current: 29.6A Power dissipation: 55W Case: IPAK Gate-source voltage: ±30V On-state resistance: 420mΩ Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDA59N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 35A Pulsed drain current: 236A Power dissipation: 392W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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FDA69N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 44.2A Pulsed drain current: 276A Power dissipation: 480W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 41mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQPF9N25C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 35.2A; 38W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 5.6A Pulsed drain current: 35.2A Power dissipation: 38W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NTD20N06LT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 60W Case: DPAK Gate-source voltage: ±15V On-state resistance: 39mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 289 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTD20N06T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTDV20N06T4G-VF01 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 10A Pulsed drain current: 60A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37.5mΩ Mounting: SMD Gate charge: 21.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDPF320N06L | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 84A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 30.2nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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RFD12N06RLESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 49W Case: DPAK Gate-source voltage: ±16V On-state resistance: 75mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1484 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD3055L104T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 45A Power dissipation: 48W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.104Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2381 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTD3055L170T4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 28.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 0.17Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NTF3055-100T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 10.6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NTF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Pulsed drain current: 9A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NVF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 261 Stücke: Lieferzeit 14-21 Tag (e) |
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RFD3055LESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 38W Case: DPAK Gate-source voltage: ±16V On-state resistance: 0.107Ω Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 641 Stücke: Lieferzeit 14-21 Tag (e) |
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| NRVB830MFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 8A; DFN5; reel,tape Mounting: SMD Application: automotive industry Max. off-state voltage: 30V Load current: 8A Max. load current: 16A Kind of package: reel; tape Semiconductor structure: single diode Case: DFN5 Type of diode: Schottky rectifying Max. forward impulse current: 150A Max. forward voltage: 0.7V |
Produkt ist nicht verfügbar |
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| NRVB830MFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 8A; DFN5; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 8A Max. load current: 16A Semiconductor structure: single diode Max. forward voltage: 0.7V Case: DFN5 Kind of package: reel; tape Max. forward impulse current: 150A Application: automotive industry |
Produkt ist nicht verfügbar |
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KA7552A | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; PWM controller; 8.7÷30V; Uout: 1.3÷18VDC; DIP8; tube Type of integrated circuit: PMIC Output voltage: 1.3...18V DC Output current: 1.5A Case: DIP8 Mounting: THT Kind of package: tube Number of channels: 1 Operating voltage: 8.7...30V Frequency: 0.6MHz Kind of integrated circuit: PWM controller |
auf Bestellung 1747 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C10LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.2µA |
auf Bestellung 4600 Stücke: Lieferzeit 14-21 Tag (e) |
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BC849CLT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 6392 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14017BDG | ONSEMI |
Category: Counters/dividers Description: IC: digital; decade counter; CMOS; SMD; SO16 Type of integrated circuit: digital Technology: CMOS Kind of integrated circuit: decade counter Mounting: SMD Case: SO16 |
auf Bestellung 139 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14017BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC Kind of package: reel; tape Number of inputs: 3 Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: 1 Technology: CMOS Kind of integrated circuit: decade counter Mounting: SMD Operating temperature: -55...125°C Case: SOIC16 |
Produkt ist nicht verfügbar |
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FQD17P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.6A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3721 Stücke: Lieferzeit 14-21 Tag (e) |
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FQP17P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.12Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQU17P06TU | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.6A Power dissipation: 44W Case: IPAK Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBZ5238B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 8.7V; SMD; reel,tape; SOT23; single diode Zener voltage: 8.7V Case: SOT23 Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.225W |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBZ5238BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 8.7V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA Zener voltage: 8.7V Leakage current: 3µA Case: SOT23 Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.225W Zener current: 20mA |
Produkt ist nicht verfügbar |
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MMSZ5238B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode Zener voltage: 8.7V Case: SOD123 Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.5W |
auf Bestellung 925 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5238BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode Zener voltage: 8.7V Case: SOD123 Type of diode: Zener Semiconductor structure: single diode Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.5W |
auf Bestellung 3955 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SD1801S-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 2A; 0.8W; TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.8W Case: TO252 Current gain: 100...560 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
Produkt ist nicht verfügbar |
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| ESD7504MUTAG | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 5V; uDFN10; Features: ESD protection; Ch: 4 Type of diode: TVS array Breakdown voltage: 5V Mounting: SMD Case: uDFN10 Max. off-state voltage: 3.3V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape Capacitance: 0.55pF |
Produkt ist nicht verfügbar |
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ESD8351XV2T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 7V; SOD523; reel,tape; Features: ESD protection; Ch: 1 Mounting: SMD Max. off-state voltage: 3.3V Breakdown voltage: 7V Number of channels: 1 Kind of package: reel; tape Type of diode: TVS Features of semiconductor devices: ESD protection Case: SOD523 |
auf Bestellung 289 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD9101P2T5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 7V; SOD923; reel,tape; Features: ESD protection; Ch: 1 Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 7V Case: SOD923 Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
Produkt ist nicht verfügbar |
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ESD9C3.3ST5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 5V; SOD923; reel,tape; Features: ESD protection; Ch: 1 Type of diode: TVS Breakdown voltage: 5V Mounting: SMD Case: SOD923 Max. off-state voltage: 3.3V Features of semiconductor devices: ESD protection Number of channels: 1 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| ESDR0502NMUTAG | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 3A; uDFN6; Features: ESD protection; Ch: 3 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Features of semiconductor devices: ESD protection Max. forward impulse current: 3A Breakdown voltage: 6V Leakage current: 1µA Max. off-state voltage: 5.5V Number of channels: 3 Type of diode: TVS array |
Produkt ist nicht verfügbar |
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| ESD7383NCTBG | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 50W; WLCSP4; Features: ESD protection; Ch: 3 Type of diode: TVS array Breakdown voltage: 6V Peak pulse power dissipation: 50W Mounting: SMD Case: WLCSP4 Max. off-state voltage: 3...5.5V Features of semiconductor devices: ESD protection Leakage current: 0.1µA Number of channels: 3 Kind of package: reel; tape Capacitance: 1.5pF |
Produkt ist nicht verfügbar |
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NTD24N06LT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 62.5W Case: DPAK Gate-source voltage: ±15V On-state resistance: 36mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDB024N06 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 395W On-state resistance: 2.4mΩ Gate charge: 226nC Gate-source voltage: ±20V Pulsed drain current: 1060A Drain-source voltage: 60V Drain current: 190A Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
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MC74HC30ADG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: tube Family: HC |
Produkt ist nicht verfügbar |
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| MC74HC30ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SOIC14; HC; 2÷6VDC; HC Type of integrated circuit: digital Kind of gate: NAND Number of channels: 1 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: HC Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
Produkt ist nicht verfügbar |
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MC74HC30ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 8 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC |
Produkt ist nicht verfügbar |
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NCV7356D1R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 5÷27VDC; CAN bus; SMD; SO8; reel,tape Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 5...27V DC Interface: CAN bus |
Produkt ist nicht verfügbar |
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MC14528BDG | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC Type of integrated circuit: digital Case: SOIC16 Mounting: SMD Kind of package: tube Operating temperature: -55...125°C Number of channels: 2 Technology: CMOS Kind of integrated circuit: monostable; multivibrator Number of inputs: 3 Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
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MC14528BDR2G | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC Type of integrated circuit: digital Case: SOIC16 Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Number of channels: 2 Technology: CMOS Kind of integrated circuit: monostable; multivibrator Number of inputs: 3 Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
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FODM2701 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-300%@5mA Collector-emitter voltage: 40V Case: Mini-flat 4pin Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 6V |
auf Bestellung 2925 Stücke: Lieferzeit 14-21 Tag (e) |
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| H11AA4M |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Produkt ist nicht verfügbar
| MCH3205-TL |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 0.8W; SOT323
Mounting: SMD
Kind of package: reel; tape
Case: SOT323
Frequency: 380MHz
Collector current: 3A
Collector-emitter voltage: 80V
Power dissipation: 0.8W
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 0.8W; SOT323
Mounting: SMD
Kind of package: reel; tape
Case: SOT323
Frequency: 380MHz
Collector current: 3A
Collector-emitter voltage: 80V
Power dissipation: 0.8W
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
| MC7805CDTG | |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; tube; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC7800
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; tube; ±4%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC7800
Produkt ist nicht verfügbar
| MC7805CDTRKG |
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Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC7800
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Manufacturer series: MC7800
Produkt ist nicht verfügbar
| BAV23CLT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Reverse recovery time: 150ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 2.39 EUR |
| BAS16LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 195+ | 0.37 EUR |
| SBAS16LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 680+ | 0.11 EUR |
| 920+ | 0.078 EUR |
| 1040+ | 0.069 EUR |
| 1200+ | 0.06 EUR |
| 1270+ | 0.056 EUR |
| LM393DR2G | |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Type of integrated circuit: comparator
Number of comparators: 2
Kind of comparator: universal
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Type of integrated circuit: comparator
Number of comparators: 2
Kind of comparator: universal
auf Bestellung 1685 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 255+ | 0.28 EUR |
| 295+ | 0.25 EUR |
| 360+ | 0.2 EUR |
| 385+ | 0.19 EUR |
| NCP785AH120T1G |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 10mA; SOT89; SMD
Mounting: SMD
Number of channels: 1
Case: SOT89
Output voltage: 1.2V
Operating temperature: -40...85°C
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±5%
Output current: 10mA
Type of integrated circuit: voltage regulator
Input voltage: 25...450V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 10mA; SOT89; SMD
Mounting: SMD
Number of channels: 1
Case: SOT89
Output voltage: 1.2V
Operating temperature: -40...85°C
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±5%
Output current: 10mA
Type of integrated circuit: voltage regulator
Input voltage: 25...450V
Produkt ist nicht verfügbar
| NCP785AH150T1G |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 10mA; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 10mA
Case: SOT89
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
Manufacturer series: NCP785A
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 10mA; SOT89; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.5V
Output current: 10mA
Case: SOT89
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
Manufacturer series: NCP785A
Produkt ist nicht verfügbar
| NCP785AH50T1G |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Output voltage: 5V
Operating temperature: -40...85°C
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±5%
Output current: 10mA
Type of integrated circuit: voltage regulator
Input voltage: 25...450V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Output voltage: 5V
Operating temperature: -40...85°C
Manufacturer series: NCP785A
Kind of voltage regulator: fixed; LDO; linear
Tolerance: ±5%
Output current: 10mA
Type of integrated circuit: voltage regulator
Input voltage: 25...450V
Produkt ist nicht verfügbar
| NTD20P06LT4G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: -60V
Drain current: -15.5A
On-state resistance: 0.13Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DPAK
Drain-source voltage: -60V
Drain current: -15.5A
On-state resistance: 0.13Ω
Produkt ist nicht verfügbar
| NTDV20P06LT4G-VF01 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Type of transistor: P-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: DPAK
Drain-source voltage: 60V
Drain current: 15.5A
On-state resistance: 143mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 15.5A; Idm: 50A; 65W; DPAK
Type of transistor: P-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Mounting: SMD
Case: DPAK
Drain-source voltage: 60V
Drain current: 15.5A
On-state resistance: 143mΩ
Produkt ist nicht verfügbar
| MC78L12ACPG |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 14.5...27V
Manufacturer series: MC78L00A
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 14.5...27V
Manufacturer series: MC78L00A
auf Bestellung 1651 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 257+ | 0.28 EUR |
| 365+ | 0.2 EUR |
| 388+ | 0.18 EUR |
| FQD9N25TM-F080 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQU9N25TU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.7A; Idm: 29.6A; 55W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.7A
Pulsed drain current: 29.6A
Power dissipation: 55W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 420mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDA59N25 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 4.99 EUR |
| 16+ | 4.49 EUR |
| 18+ | 3.98 EUR |
| FDA69N25 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQPF9N25C |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 35.2A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 35.2A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 5.6A; Idm: 35.2A; 38W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 5.6A
Pulsed drain current: 35.2A
Power dissipation: 38W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTD20N06LT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 68+ | 1.06 EUR |
| 85+ | 0.84 EUR |
| 90+ | 0.8 EUR |
| NTD20N06T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTDV20N06T4G-VF01 |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; Idm: 60A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Pulsed drain current: 60A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37.5mΩ
Mounting: SMD
Gate charge: 21.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDPF320N06L |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 84A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 84A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 30.2nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
| RFD12N06RLESM9A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1484 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 74+ | 0.98 EUR |
| 93+ | 0.77 EUR |
| 98+ | 0.73 EUR |
| 500+ | 0.72 EUR |
| NTD3055L104T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 45A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.104Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2381 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 69+ | 1.04 EUR |
| 100+ | 0.72 EUR |
| 106+ | 0.68 EUR |
| NTD3055L170T4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 28.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 28.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 0.17Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTF3055-100T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTF3055L108T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Pulsed drain current: 9A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NVF3055L108T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.8 EUR |
| 80+ | 0.9 EUR |
| 101+ | 0.71 EUR |
| 107+ | 0.67 EUR |
| 250+ | 0.66 EUR |
| RFD3055LESM9A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 641 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 1.5 EUR |
| 102+ | 0.71 EUR |
| 126+ | 0.57 EUR |
| 145+ | 0.5 EUR |
| 153+ | 0.47 EUR |
| NRVB830MFST1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; DFN5; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 30V
Load current: 8A
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.7V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; DFN5; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 30V
Load current: 8A
Max. load current: 16A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN5
Type of diode: Schottky rectifying
Max. forward impulse current: 150A
Max. forward voltage: 0.7V
Produkt ist nicht verfügbar
| NRVB830MFST3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 8A; DFN5; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 8A
Max. load current: 16A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: DFN5
Kind of package: reel; tape
Max. forward impulse current: 150A
Application: automotive industry
Produkt ist nicht verfügbar
| KA7552A |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; PWM controller; 8.7÷30V; Uout: 1.3÷18VDC; DIP8; tube
Type of integrated circuit: PMIC
Output voltage: 1.3...18V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Kind of package: tube
Number of channels: 1
Operating voltage: 8.7...30V
Frequency: 0.6MHz
Kind of integrated circuit: PWM controller
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; PWM controller; 8.7÷30V; Uout: 1.3÷18VDC; DIP8; tube
Type of integrated circuit: PMIC
Output voltage: 1.3...18V DC
Output current: 1.5A
Case: DIP8
Mounting: THT
Kind of package: tube
Number of channels: 1
Operating voltage: 8.7...30V
Frequency: 0.6MHz
Kind of integrated circuit: PWM controller
auf Bestellung 1747 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 59+ | 1.22 EUR |
| 105+ | 0.69 EUR |
| 109+ | 0.66 EUR |
| BZX84C10LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
auf Bestellung 4600 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1150+ | 0.063 EUR |
| 2100+ | 0.034 EUR |
| 2325+ | 0.031 EUR |
| 3050+ | 0.024 EUR |
| 3225+ | 0.022 EUR |
| BC849CLT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 6392 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1516+ | 0.047 EUR |
| 2646+ | 0.027 EUR |
| 3165+ | 0.023 EUR |
| 3677+ | 0.019 EUR |
| 3907+ | 0.018 EUR |
| MC14017BDG |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; decade counter; CMOS; SMD; SO16
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: decade counter
Mounting: SMD
Case: SO16
Category: Counters/dividers
Description: IC: digital; decade counter; CMOS; SMD; SO16
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: decade counter
Mounting: SMD
Case: SO16
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 98+ | 0.73 EUR |
| 106+ | 0.68 EUR |
| 136+ | 0.53 EUR |
| 139+ | 0.51 EUR |
| MC14017BDR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Kind of package: reel; tape
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Kind of integrated circuit: decade counter
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Kind of package: reel; tape
Number of inputs: 3
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 1
Technology: CMOS
Kind of integrated circuit: decade counter
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Produkt ist nicht verfügbar
| FQD17P06TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3721 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.14 EUR |
| 77+ | 0.94 EUR |
| 99+ | 0.73 EUR |
| 105+ | 0.69 EUR |
| FQP17P06 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQU17P06TU |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 72+ | 1 EUR |
| 79+ | 0.92 EUR |
| 87+ | 0.83 EUR |
| 103+ | 0.7 EUR |
| 109+ | 0.66 EUR |
| MMBZ5238B |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 8.7V; SMD; reel,tape; SOT23; single diode
Zener voltage: 8.7V
Case: SOT23
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.225W
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 8.7V; SMD; reel,tape; SOT23; single diode
Zener voltage: 8.7V
Case: SOT23
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.225W
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 55+ | 1.3 EUR |
| MMBZ5238BLT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 8.7V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA
Zener voltage: 8.7V
Leakage current: 3µA
Case: SOT23
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.225W
Zener current: 20mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 8.7V; 20mA; SMD; reel,tape; SOT23; Ir: 3uA
Zener voltage: 8.7V
Leakage current: 3µA
Case: SOT23
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.225W
Zener current: 20mA
Produkt ist nicht verfügbar
| MMSZ5238B |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Zener voltage: 8.7V
Case: SOD123
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.5W
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Zener voltage: 8.7V
Case: SOD123
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.5W
auf Bestellung 925 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 925+ | 0.077 EUR |
| MMSZ5238BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Zener voltage: 8.7V
Case: SOD123
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.5W
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.7V; SMD; reel,tape; SOD123; single diode
Zener voltage: 8.7V
Case: SOD123
Type of diode: Zener
Semiconductor structure: single diode
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.5W
auf Bestellung 3955 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 897+ | 0.08 EUR |
| 1232+ | 0.058 EUR |
| 1534+ | 0.047 EUR |
| 1866+ | 0.038 EUR |
| 1977+ | 0.036 EUR |
| 2SD1801S-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.8W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.8W
Case: TO252
Current gain: 100...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 2A; 0.8W; TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.8W
Case: TO252
Current gain: 100...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
| ESD7504MUTAG |
|
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.55pF
Category: Transil diodes - arrays
Description: Diode: TVS array; 5V; uDFN10; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 5V
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Capacitance: 0.55pF
Produkt ist nicht verfügbar
| ESD8351XV2T1G |
|
Hersteller: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 7V; SOD523; reel,tape; Features: ESD protection; Ch: 1
Mounting: SMD
Max. off-state voltage: 3.3V
Breakdown voltage: 7V
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: SOD523
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 7V; SOD523; reel,tape; Features: ESD protection; Ch: 1
Mounting: SMD
Max. off-state voltage: 3.3V
Breakdown voltage: 7V
Number of channels: 1
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Case: SOD523
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)| ESD9101P2T5G |
|
Hersteller: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 7V; SOD923; reel,tape; Features: ESD protection; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 7V; SOD923; reel,tape; Features: ESD protection; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Produkt ist nicht verfügbar
| ESD9C3.3ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5V; SOD923; reel,tape; Features: ESD protection; Ch: 1
Type of diode: TVS
Breakdown voltage: 5V
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Number of channels: 1
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 5V; SOD923; reel,tape; Features: ESD protection; Ch: 1
Type of diode: TVS
Breakdown voltage: 5V
Mounting: SMD
Case: SOD923
Max. off-state voltage: 3.3V
Features of semiconductor devices: ESD protection
Number of channels: 1
Kind of package: reel; tape
Produkt ist nicht verfügbar
| ESDR0502NMUTAG |
|
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 3A; uDFN6; Features: ESD protection; Ch: 3
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Max. forward impulse current: 3A
Breakdown voltage: 6V
Leakage current: 1µA
Max. off-state voltage: 5.5V
Number of channels: 3
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 3A; uDFN6; Features: ESD protection; Ch: 3
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Max. forward impulse current: 3A
Breakdown voltage: 6V
Leakage current: 1µA
Max. off-state voltage: 5.5V
Number of channels: 3
Type of diode: TVS array
Produkt ist nicht verfügbar
| ESD7383NCTBG |
|
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 50W; WLCSP4; Features: ESD protection; Ch: 3
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 50W
Mounting: SMD
Case: WLCSP4
Max. off-state voltage: 3...5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 3
Kind of package: reel; tape
Capacitance: 1.5pF
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 50W; WLCSP4; Features: ESD protection; Ch: 3
Type of diode: TVS array
Breakdown voltage: 6V
Peak pulse power dissipation: 50W
Mounting: SMD
Case: WLCSP4
Max. off-state voltage: 3...5.5V
Features of semiconductor devices: ESD protection
Leakage current: 0.1µA
Number of channels: 3
Kind of package: reel; tape
Capacitance: 1.5pF
Produkt ist nicht verfügbar
| NTD24N06LT4G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 62.5W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 62.5W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDB024N06 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 395W
On-state resistance: 2.4mΩ
Gate charge: 226nC
Gate-source voltage: ±20V
Pulsed drain current: 1060A
Drain-source voltage: 60V
Drain current: 190A
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 190A; Idm: 1060A; 395W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 395W
On-state resistance: 2.4mΩ
Gate charge: 226nC
Gate-source voltage: ±20V
Pulsed drain current: 1060A
Drain-source voltage: 60V
Drain current: 190A
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
| MC74HC30ADG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HC
Produkt ist nicht verfügbar
| MC74HC30ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SOIC14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; SOIC14; HC; 2÷6VDC; HC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: HC
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
| MC74HC30ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 8; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Produkt ist nicht verfügbar
| NCV7356D1R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; CAN bus; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 5...27V DC
Interface: CAN bus
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5÷27VDC; CAN bus; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 5...27V DC
Interface: CAN bus
Produkt ist nicht verfügbar
| MC14528BDG |
|
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Number of channels: 2
Technology: CMOS
Kind of integrated circuit: monostable; multivibrator
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Number of channels: 2
Technology: CMOS
Kind of integrated circuit: monostable; multivibrator
Number of inputs: 3
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
| MC14528BDR2G |
|
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 2
Technology: CMOS
Kind of integrated circuit: monostable; multivibrator
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; IN: 3; CMOS; 3÷18VDC
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 2
Technology: CMOS
Kind of integrated circuit: monostable; multivibrator
Number of inputs: 3
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
| FODM2701 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-300%@5mA
Collector-emitter voltage: 40V
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 40V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-300%@5mA
Collector-emitter voltage: 40V
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
auf Bestellung 2925 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 67+ | 1.08 EUR |
| 109+ | 0.66 EUR |
| 180+ | 0.4 EUR |
| 191+ | 0.38 EUR |