Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MMSZ3V9T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 525 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5221BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 3055 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5223BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Semiconductor structure: single diode Zener voltage: 2.7V Power dissipation: 0.5W Type of diode: Zener |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5227BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5229BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 5875 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP630AD2TG | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.216÷10.75V; 3A Type of integrated circuit: voltage regulator Mounting: SMD Number of channels: 1 Case: D2PAK-5 Operating temperature: -40...125°C Kind of package: tube Output current: 3A Input voltage: 1.25...12V Voltage drop: 1.25V Output voltage: 1.216...10.75V Tolerance: ±1.5% Kind of voltage regulator: adjustable; LDO; linear Manufacturer series: NCP630 |
Produkt ist nicht verfügbar |
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NUP4114HMR6T1G | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6.5V; 12A; TSOP6; Features: ESD protection; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.5V Max. forward impulse current: 12A Mounting: SMD Case: TSOP6 Max. off-state voltage: 5.5V Features of semiconductor devices: ESD protection Leakage current: 1µA Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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NCP730ASNADJT1G | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.48V Output voltage: 1.2...37V Output current: 0.15A Case: TSOT23-5 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V Manufacturer series: NCP730 |
Produkt ist nicht verfügbar |
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MC14504BDTR2G | ONSEMI |
Category: Level translators Description: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16 Technology: CMOS Case: TSSOP16 Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Kind of integrated circuit: level shifter Type of integrated circuit: digital Number of channels: 6 Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
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NTD5867NLT4G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 36W; DPAK Kind of package: reel; tape Power dissipation: 36W Gate charge: 15nC Polarisation: unipolar Drain current: 20A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Case: DPAK On-state resistance: 39mΩ Gate-source voltage: ±20V Mounting: SMD |
auf Bestellung 2675 Stücke: Lieferzeit 14-21 Tag (e) |
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NRVUS120VT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 40A Application: automotive industry Max. off-state voltage: 200V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: rectifying Reverse recovery time: 75ns Mounting: SMD Max. forward impulse current: 40A Max. forward voltage: 1.25V |
Produkt ist nicht verfügbar |
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1N5364BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 33V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 33V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA |
auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74LCX541DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state |
auf Bestellung 1851 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS64LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23 Current gain: 20 Mounting: SMD Kind of package: reel; tape Frequency: 60MHz |
Produkt ist nicht verfügbar |
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MC14071BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Delay time: 130ns Family: HEF4000B |
Produkt ist nicht verfügbar |
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MC14071BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 130ns Family: HEF4000B |
Produkt ist nicht verfügbar |
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MC14071BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 130ns Family: HEF4000B |
Produkt ist nicht verfügbar |
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74ACT240SC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20; ACT Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 Mounting: SMD Case: SO20 Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of output: 3-state |
Produkt ist nicht verfügbar |
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74ACT240SCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20-W; ACT Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 Mounting: SMD Case: SO20-W Manufacturer series: ACT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Kind of output: 3-state |
Produkt ist nicht verfügbar |
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NC7SZ374P6X | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS Manufacturer series: 7SZ Mounting: SMD Case: SC70-6 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state |
Produkt ist nicht verfügbar |
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1SMB5913BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 3.3V; 113.6mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Mounting: SMD Semiconductor structure: single diode Case: SMB Kind of package: reel; tape Power dissipation: 3W Zener voltage: 3.3V Zener resistance: 10Ω Zener current: 113.6mA Tolerance: ±5% |
Produkt ist nicht verfügbar |
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MJW21193G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3 Collector current: 16A Type of transistor: PNP Power dissipation: 200W Polarisation: bipolar Kind of package: tube Case: TO247-3 Collector-emitter voltage: 250V Mounting: THT |
Produkt ist nicht verfügbar |
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NJW21193G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P Application: automotive industry Collector current: 16A Type of transistor: PNP Frequency: 4MHz Power dissipation: 200W Polarisation: bipolar Kind of package: tube Case: TO3P Collector-emitter voltage: 250V Mounting: THT Current gain: 20...80 |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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NTH4L020N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 84A Pulsed drain current: 408A Power dissipation: 255W Case: TO247-4 Gate-source voltage: -15...25V On-state resistance: 28mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
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FDMS8025S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Case: Power56 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 49A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A |
Produkt ist nicht verfügbar |
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NTH4L015N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 483A; 250W; TO247 Mounting: THT Kind of package: tube Drain-source voltage: 650V Drain current: 100A On-state resistance: 16mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Gate charge: 283nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 483A Case: TO247 |
Produkt ist nicht verfügbar |
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MM3Z16VB | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 16V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 1V Case: SOD323F Semiconductor structure: single diode Leakage current: 45nA |
Produkt ist nicht verfügbar |
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MM3Z16VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 16V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z16VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode |
auf Bestellung 1169 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMM3Z16VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 16V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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SZMM3Z16VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 16V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Application: automotive industry |
Produkt ist nicht verfügbar |
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SMMUN2214LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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SS35 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape; 2.27W Mounting: SMD Case: SMC Max. off-state voltage: 50V Max. forward voltage: 0.75V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Power dissipation: 2.27W Kind of package: reel; tape Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
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MC14060BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16 Mounting: SMD Technology: CMOS Kind of integrated circuit: 14bit; binary counter; oscillator Case: SO16 Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
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MC14060BDTR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS Operating temperature: -55...125°C Mounting: SMD Technology: CMOS Kind of integrated circuit: 14bit; binary counter; oscillator Case: TSSOP16 Number of inputs: 4 Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: 1 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MURS260T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A Mounting: SMD Load current: 2A Semiconductor structure: single diode Reverse recovery time: 75ns Max. forward impulse current: 35A Kind of package: reel; tape Type of diode: rectifying Case: SMB Features of semiconductor devices: ultrafast switching Max. off-state voltage: 0.6kV Max. forward voltage: 1.45V |
auf Bestellung 4613 Stücke: Lieferzeit 14-21 Tag (e) |
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74LCX373MTC | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Trigger: level-triggered Quiescent current: 10µA |
Produkt ist nicht verfügbar |
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74LCX373MTCX | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Trigger: level-triggered Quiescent current: 10µA |
Produkt ist nicht verfügbar |
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MC74LCX373DTG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: CMOS Supply voltage: 1.5...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Family: LCX Integrated circuit features: 5V tolerant on inputs/outputs |
Produkt ist nicht verfügbar |
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MC74LCX373DTR2G | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Technology: CMOS Supply voltage: 2...3.6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: LCX Operating temperature: -40...85°C Trigger: level-triggered |
Produkt ist nicht verfügbar |
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FQB47P06TM-AM002 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQB55N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 38.9A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB7P20TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; -4.6A; Idm: -29.2A; 90W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: -4.6A Pulsed drain current: -29.2A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.69Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQB7P20TM-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -4.6A; Idm: -29.2A; 90W Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -4.6A Pulsed drain current: -29.2A Power dissipation: 90W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.69Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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FQB8N90CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 3.8A Pulsed drain current: 25A Power dissipation: 171W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQD11P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.95A Power dissipation: 38W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1997 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD13N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.3A Power dissipation: 40W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQD17N08LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 8.2A; Idm: 51.6A; 40W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 8.2A Pulsed drain current: 51.6A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SBRD8360G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3A; DPAK; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.7V Case: DPAK Kind of package: tube Max. forward impulse current: 75A |
Produkt ist nicht verfügbar |
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ESD5Z12T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape Type of diode: TVS Peak pulse power dissipation: 240W Max. off-state voltage: 12V Breakdown voltage: 14.1V Max. forward impulse current: 9.6A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 10nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
auf Bestellung 4958 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD5Z2.5T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 120W Max. off-state voltage: 2.5V Breakdown voltage: 4V Max. forward impulse current: 11A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 6µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
Produkt ist nicht verfügbar |
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ESD5Z6.0T1G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape Type of diode: TVS Peak pulse power dissipation: 181W Max. off-state voltage: 6V Breakdown voltage: 6.8V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Leakage current: 10nA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
auf Bestellung 8250 Stücke: Lieferzeit 14-21 Tag (e) |
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CM1223-02SO | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 0.225W; SOT23-5; Features: ESD protection Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 3.3...5V Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.225W Capacitance: 1...1.5pF Breakdown voltage: 6V Leakage current: 0.1µA Number of channels: 2 Type of diode: TVS array |
Produkt ist nicht verfügbar |
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74LCX125MTCX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: TSSOP14 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 10µA |
auf Bestellung 898 Stücke: Lieferzeit 14-21 Tag (e) |
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74LCX138MTCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; TSSOP16; LCX; 10uA Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Mounting: SMD Case: TSSOP16 Manufacturer series: LCX Supply voltage: 2...3.6V DC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 10µA |
Produkt ist nicht verfügbar |
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74LCX138MX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 1 Number of inputs: 6 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: LCX Supply voltage: 1.5...3.6V DC Family: LCX Kind of package: reel; tape Operating temperature: -40...85°C Integrated circuit features: tolerates a voltage of 5V on the inputs |
Produkt ist nicht verfügbar |
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74LVT244WMX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 16 Mounting: SMD Case: SO20-W Supply voltage: 2.7...3.6V DC Operating temperature: -40...85°C Kind of output: 3-state Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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ISL9K3060G3 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 325A; TO247-3; 36ns Case: TO247-3 Max. off-state voltage: 0.6kV Mounting: THT Max. forward impulse current: 325A Max. forward voltage: 2.4V Load current: 30A x2 Max. load current: 60A Kind of package: tube Semiconductor structure: common cathode; double Capacitance: 120pF Type of diode: rectifying Reverse recovery time: 36ns |
Produkt ist nicht verfügbar |
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FAN73833MX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™ Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Technology: MillerDrive™ Case: SOP8 Output current: -650...350mA Number of channels: 2 Supply voltage: 11...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 100ns Pulse fall time: 80ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
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FAN7383MX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™ Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Technology: MillerDrive™ Case: SOP14 Output current: -650...350mA Number of channels: 4 Supply voltage: 15...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 100ns Pulse fall time: 80ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
MMSZ3V9T1G |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 525 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
358+ | 0.2 EUR |
417+ | 0.17 EUR |
525+ | 0.14 EUR |
MMSZ5221BT1G |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 3055 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1498+ | 0.048 EUR |
1662+ | 0.043 EUR |
1880+ | 0.038 EUR |
2284+ | 0.031 EUR |
2416+ | 0.03 EUR |
MMSZ5223BT1G |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Power dissipation: 0.5W
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Semiconductor structure: single diode
Zener voltage: 2.7V
Power dissipation: 0.5W
Type of diode: Zener
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1150+ | 0.063 EUR |
1275+ | 0.056 EUR |
1500+ | 0.047 EUR |
MMSZ5227BT1G |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)MMSZ5229BT1G |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 5875 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1462+ | 0.049 EUR |
1624+ | 0.044 EUR |
1839+ | 0.039 EUR |
2223+ | 0.032 EUR |
2348+ | 0.03 EUR |
NCP630AD2TG |
Hersteller: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.216÷10.75V; 3A
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: D2PAK-5
Operating temperature: -40...125°C
Kind of package: tube
Output current: 3A
Input voltage: 1.25...12V
Voltage drop: 1.25V
Output voltage: 1.216...10.75V
Tolerance: ±1.5%
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: NCP630
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.216÷10.75V; 3A
Type of integrated circuit: voltage regulator
Mounting: SMD
Number of channels: 1
Case: D2PAK-5
Operating temperature: -40...125°C
Kind of package: tube
Output current: 3A
Input voltage: 1.25...12V
Voltage drop: 1.25V
Output voltage: 1.216...10.75V
Tolerance: ±1.5%
Kind of voltage regulator: adjustable; LDO; linear
Manufacturer series: NCP630
Produkt ist nicht verfügbar
NUP4114HMR6T1G |
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; TSOP6; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; TSOP6; Features: ESD protection; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5.5V
Features of semiconductor devices: ESD protection
Leakage current: 1µA
Number of channels: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
NCP730ASNADJT1G |
Hersteller: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Manufacturer series: NCP730
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.2÷37V; 150mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.48V
Output voltage: 1.2...37V
Output current: 0.15A
Case: TSOT23-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Manufacturer series: NCP730
Produkt ist nicht verfügbar
MC14504BDTR2G |
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16
Technology: CMOS
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of integrated circuit: level shifter
Type of integrated circuit: digital
Number of channels: 6
Supply voltage: 3...18V DC
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16
Technology: CMOS
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of integrated circuit: level shifter
Type of integrated circuit: digital
Number of channels: 6
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
NTD5867NLT4G |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 36W; DPAK
Kind of package: reel; tape
Power dissipation: 36W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Case: DPAK
On-state resistance: 39mΩ
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 36W; DPAK
Kind of package: reel; tape
Power dissipation: 36W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Case: DPAK
On-state resistance: 39mΩ
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 2675 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
122+ | 0.59 EUR |
129+ | 0.56 EUR |
186+ | 0.39 EUR |
193+ | 0.37 EUR |
NRVUS120VT3G |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 40A
Application: automotive industry
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Reverse recovery time: 75ns
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 75ns; SMB; Ufmax: 1.25V; Ifsm: 40A
Application: automotive industry
Max. off-state voltage: 200V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: rectifying
Reverse recovery time: 75ns
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 1.25V
Produkt ist nicht verfügbar
1N5364BRLG |
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
139+ | 0.51 EUR |
196+ | 0.37 EUR |
269+ | 0.27 EUR |
285+ | 0.25 EUR |
MC74LCX541DTR2G |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
auf Bestellung 1851 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
76+ | 0.94 EUR |
86+ | 0.84 EUR |
96+ | 0.75 EUR |
182+ | 0.39 EUR |
192+ | 0.37 EUR |
BSS64LT1G |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23
Current gain: 20
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
Produkt ist nicht verfügbar
MC14071BDG |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 130ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 130ns
Family: HEF4000B
Produkt ist nicht verfügbar
MC14071BDR2G |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
Produkt ist nicht verfügbar
MC14071BDTR2G |
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 130ns
Family: HEF4000B
Produkt ist nicht verfügbar
74ACT240SC |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20; ACT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: SO20
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Produkt ist nicht verfügbar
74ACT240SCX |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20-W; ACT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; SMD; SO20-W; ACT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: SO20-W
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of output: 3-state
Produkt ist nicht verfügbar
NC7SZ374P6X |
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Manufacturer series: 7SZ
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Manufacturer series: 7SZ
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Produkt ist nicht verfügbar
1SMB5913BT3G |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; 113.6mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Zener voltage: 3.3V
Zener resistance: 10Ω
Zener current: 113.6mA
Tolerance: ±5%
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 3.3V; 113.6mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Power dissipation: 3W
Zener voltage: 3.3V
Zener resistance: 10Ω
Zener current: 113.6mA
Tolerance: ±5%
Produkt ist nicht verfügbar
MJW21193G |
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3
Collector current: 16A
Type of transistor: PNP
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Case: TO247-3
Collector-emitter voltage: 250V
Mounting: THT
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO247-3
Collector current: 16A
Type of transistor: PNP
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Case: TO247-3
Collector-emitter voltage: 250V
Mounting: THT
Produkt ist nicht verfügbar
NJW21193G |
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P
Application: automotive industry
Collector current: 16A
Type of transistor: PNP
Frequency: 4MHz
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Case: TO3P
Collector-emitter voltage: 250V
Mounting: THT
Current gain: 20...80
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO3P
Application: automotive industry
Collector current: 16A
Type of transistor: PNP
Frequency: 4MHz
Power dissipation: 200W
Polarisation: bipolar
Kind of package: tube
Case: TO3P
Collector-emitter voltage: 250V
Mounting: THT
Current gain: 20...80
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.88 EUR |
17+ | 4.3 EUR |
20+ | 3.73 EUR |
21+ | 3.53 EUR |
NTH4L020N120SC1 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 408A
Power dissipation: 255W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 84A; Idm: 408A; 255W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 84A
Pulsed drain current: 408A
Power dissipation: 255W
Case: TO247-4
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
FDMS8025S |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Case: Power56
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Case: Power56
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 50W
Polarisation: unipolar
Gate charge: 47nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Produkt ist nicht verfügbar
NTH4L015N065SC1 |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 483A; 250W; TO247
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 100A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 283nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 483A
Case: TO247
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 483A; 250W; TO247
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 100A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 283nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 483A
Case: TO247
Produkt ist nicht verfügbar
MM3Z16VB |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 16V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 1V
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 45nA
Produkt ist nicht verfügbar
MM3Z16VST1G |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1330+ | 0.054 EUR |
2085+ | 0.034 EUR |
2315+ | 0.031 EUR |
2875+ | 0.025 EUR |
3050+ | 0.023 EUR |
MM3Z16VT1G |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
auf Bestellung 1169 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1169+ | 0.061 EUR |
SZMM3Z16VST1G |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
SZMM3Z16VT1G |
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 16V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
SMMUN2214LT1G |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
245+ | 0.29 EUR |
SS35 |
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape; 2.27W
Mounting: SMD
Case: SMC
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Power dissipation: 2.27W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape; 2.27W
Mounting: SMD
Case: SMC
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Power dissipation: 2.27W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
MC14060BDR2G |
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Mounting: SMD
Technology: CMOS
Kind of integrated circuit: 14bit; binary counter; oscillator
Case: SO16
Type of integrated circuit: digital
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; CMOS; SMD; SO16
Mounting: SMD
Technology: CMOS
Kind of integrated circuit: 14bit; binary counter; oscillator
Case: SO16
Type of integrated circuit: digital
Produkt ist nicht verfügbar
MC14060BDTR2G |
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS
Operating temperature: -55...125°C
Mounting: SMD
Technology: CMOS
Kind of integrated circuit: 14bit; binary counter; oscillator
Case: TSSOP16
Number of inputs: 4
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter,oscillator; Ch: 1; IN: 4; CMOS
Operating temperature: -55...125°C
Mounting: SMD
Technology: CMOS
Kind of integrated circuit: 14bit; binary counter; oscillator
Case: TSSOP16
Number of inputs: 4
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 1
Kind of package: reel; tape
Produkt ist nicht verfügbar
MURS260T3G |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Mounting: SMD
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Mounting: SMD
Load current: 2A
Semiconductor structure: single diode
Reverse recovery time: 75ns
Max. forward impulse current: 35A
Kind of package: reel; tape
Type of diode: rectifying
Case: SMB
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.45V
auf Bestellung 4613 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
143+ | 0.5 EUR |
155+ | 0.46 EUR |
176+ | 0.41 EUR |
210+ | 0.34 EUR |
291+ | 0.25 EUR |
309+ | 0.23 EUR |
2500+ | 0.22 EUR |
74LCX373MTC |
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 10µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 10µA
Produkt ist nicht verfügbar
74LCX373MTCX |
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 10µA
Category: Latches
Description: IC: digital; D latch; Ch: 8; 2÷3.6VDC; SMD; TSSOP20; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Trigger: level-triggered
Quiescent current: 10µA
Produkt ist nicht verfügbar
MC74LCX373DTG |
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Family: LCX
Integrated circuit features: 5V tolerant on inputs/outputs
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 1.5...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Family: LCX
Integrated circuit features: 5V tolerant on inputs/outputs
Produkt ist nicht verfügbar
MC74LCX373DTR2G |
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; CMOS; 2÷3.6VDC; SMD; TSSOP20; LCX
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Technology: CMOS
Supply voltage: 2...3.6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: LCX
Operating temperature: -40...85°C
Trigger: level-triggered
Produkt ist nicht verfügbar
FQB47P06TM-AM002 |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB55N10TM |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38.9A; 155W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38.9A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 2.67 EUR |
30+ | 2.43 EUR |
39+ | 1.84 EUR |
41+ | 1.74 EUR |
FQB7P20TM |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; -4.6A; Idm: -29.2A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: -4.6A
Pulsed drain current: -29.2A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; -4.6A; Idm: -29.2A; 90W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: -4.6A
Pulsed drain current: -29.2A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQB7P20TM-F085 |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4.6A; Idm: -29.2A; 90W
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4.6A
Pulsed drain current: -29.2A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -4.6A; Idm: -29.2A; 90W
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -4.6A
Pulsed drain current: -29.2A
Power dissipation: 90W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.69Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
FQB8N90CTM |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3.8A; Idm: 25A; 171W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 171W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD11P06TM |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1997 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
38+ | 1.9 EUR |
69+ | 1.05 EUR |
91+ | 0.79 EUR |
97+ | 0.74 EUR |
FQD13N10TM |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.3A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.3A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQD17N08LTM |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 8.2A; Idm: 51.6A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 8.2A
Pulsed drain current: 51.6A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 8.2A; Idm: 51.6A; 40W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 8.2A
Pulsed drain current: 51.6A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SBRD8360G |
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; DPAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: DPAK
Kind of package: tube
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3A; DPAK; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Case: DPAK
Kind of package: tube
Max. forward impulse current: 75A
Produkt ist nicht verfügbar
ESD5Z12T1G |
Hersteller: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 240W
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Max. forward impulse current: 9.6A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 240W
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Max. forward impulse current: 9.6A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
auf Bestellung 4958 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
913+ | 0.078 EUR |
1202+ | 0.059 EUR |
1425+ | 0.05 EUR |
1530+ | 0.047 EUR |
1613+ | 0.044 EUR |
ESD5Z2.5T1G |
Hersteller: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 120W
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Max. forward impulse current: 11A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 6µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Produkt ist nicht verfügbar
ESD5Z6.0T1G |
Hersteller: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 181W
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 181W
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Leakage current: 10nA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
auf Bestellung 8250 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1117+ | 0.064 EUR |
1320+ | 0.054 EUR |
1558+ | 0.046 EUR |
1667+ | 0.043 EUR |
1767+ | 0.04 EUR |
CM1223-02SO |
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SOT23-5; Features: ESD protection
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 3.3...5V
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.225W
Capacitance: 1...1.5pF
Breakdown voltage: 6V
Leakage current: 0.1µA
Number of channels: 2
Type of diode: TVS array
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SOT23-5; Features: ESD protection
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 3.3...5V
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.225W
Capacitance: 1...1.5pF
Breakdown voltage: 6V
Leakage current: 0.1µA
Number of channels: 2
Type of diode: TVS array
Produkt ist nicht verfügbar
74LCX125MTCX |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 898 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
157+ | 0.46 EUR |
185+ | 0.39 EUR |
220+ | 0.33 EUR |
250+ | 0.29 EUR |
264+ | 0.27 EUR |
74LCX138MTCX |
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; TSSOP16; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; SMD; TSSOP16; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Mounting: SMD
Case: TSSOP16
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 10µA
Produkt ist nicht verfügbar
74LCX138MX |
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: LCX
Supply voltage: 1.5...3.6V DC
Family: LCX
Kind of package: reel; tape
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: LCX
Supply voltage: 1.5...3.6V DC
Family: LCX
Kind of package: reel; tape
Operating temperature: -40...85°C
Integrated circuit features: tolerates a voltage of 5V on the inputs
Produkt ist nicht verfügbar
74LVT244WMX |
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Case: SO20-W
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Case: SO20-W
Supply voltage: 2.7...3.6V DC
Operating temperature: -40...85°C
Kind of output: 3-state
Kind of package: reel; tape
Produkt ist nicht verfügbar
ISL9K3060G3 |
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 325A; TO247-3; 36ns
Case: TO247-3
Max. off-state voltage: 0.6kV
Mounting: THT
Max. forward impulse current: 325A
Max. forward voltage: 2.4V
Load current: 30A x2
Max. load current: 60A
Kind of package: tube
Semiconductor structure: common cathode; double
Capacitance: 120pF
Type of diode: rectifying
Reverse recovery time: 36ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 325A; TO247-3; 36ns
Case: TO247-3
Max. off-state voltage: 0.6kV
Mounting: THT
Max. forward impulse current: 325A
Max. forward voltage: 2.4V
Load current: 30A x2
Max. load current: 60A
Kind of package: tube
Semiconductor structure: common cathode; double
Capacitance: 120pF
Type of diode: rectifying
Reverse recovery time: 36ns
Produkt ist nicht verfügbar
FAN73833MX |
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 11...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
FAN7383MX |
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP14
Output current: -650...350mA
Number of channels: 4
Supply voltage: 15...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP14
Output current: -650...350mA
Number of channels: 4
Supply voltage: 15...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar