| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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FDPF3860T | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12.7A; 33.8W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 12.7A Power dissipation: 33.8W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 38.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| FSA1208BQX | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 8; MLP20; 2.3÷4.3VDC; reel,tape; OUT: 8PST-NO Type of integrated circuit: analog switch Number of channels: 8 Case: MLP20 Supply voltage: 2.3...4.3V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: 8PST-NO Quiescent current: 1µA Technology: CMOS; TTL |
Produkt ist nicht verfügbar |
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| MC74LVX4051MNTWG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: digital; demultiplexer,multiplexer; Ch: 1; QFN16; 2.5÷6VDC Type of integrated circuit: digital Case: QFN16 Supply voltage: 2.5...6V DC Mounting: SMD Operating temperature: -55...125°C Manufacturer series: LVX Number of channels: 1 Technology: CMOS Kind of integrated circuit: demultiplexer; multiplexer Quiescent current: 80µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| FDMC007N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 42A Pulsed drain current: 330A Power dissipation: 57W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 41nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMC007N08LCDC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8 Gate charge: 44nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 339A Mounting: SMD Case: PQFN8 Drain-source voltage: 80V Drain current: 41A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 57W Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| FDMC008N08C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 38A; Idm: 273A; 57W; Power33 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 80V Drain current: 38A Pulsed drain current: 273A Power dissipation: 57W Case: Power33 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMC010N08C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 206A; 52W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 32A Pulsed drain current: 206A Power dissipation: 52W Case: Power33 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMC010N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 200A; 52W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 32A Pulsed drain current: 200A Power dissipation: 52W Case: Power33 Gate-source voltage: ±20V On-state resistance: 18.4mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMC2610 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.5A Power dissipation: 42W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 397mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMC2674 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 220V; 7A; Idm: 13.8A; 42W; MLP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 220V Drain current: 7A Pulsed drain current: 13.8A Power dissipation: 42W Case: MLP8 Gate-source voltage: ±20V On-state resistance: 814mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMC3020DC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 100A Power dissipation: 50W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMC3612 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 16A Power dissipation: 35W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 212mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMC3612-L701 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 15A Power dissipation: 35W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 212mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMC4D9P20X8 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -47A Pulsed drain current: -335A Power dissipation: 40W Case: PQFN8 Gate-source voltage: ±12V On-state resistance: 16.4mΩ Mounting: SMD Gate charge: 109nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMC5614P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -13.5A; 42W; WDFN8 Case: WDFN8 Mounting: SMD Kind of package: reel; tape Power dissipation: 42W Drain-source voltage: -60V Drain current: -13.5A On-state resistance: 168mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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| FDMC610P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -80A; Idm: -200A; 48W; Power33 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -80A Pulsed drain current: -200A Power dissipation: 48W Case: Power33 Gate-source voltage: ±8V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMC7200 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 1.9/2.2W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 40A Power dissipation: 1.9/2.2W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 35.5/18mΩ Mounting: SMD Gate charge: 10/22nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMC7570S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 68nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 120A Case: PQFN8 Drain-source voltage: 25V Drain current: 40A On-state resistance: 2.9mΩ Type of transistor: N-MOSFET Power dissipation: 59W |
Produkt ist nicht verfügbar |
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MC14029BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; binary up/down counter,decade up/down counter Type of integrated circuit: digital Kind of integrated circuit: binary up/down counter; decade up/down counter Technology: CMOS Mounting: SMD Case: SO16 Supply voltage: 3...18V DC Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 600µA |
Produkt ist nicht verfügbar |
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NLV14029BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; binary up/down counter,decade up/down counter Mounting: SMD Operating temperature: -55...125°C Kind of package: reel; tape Type of integrated circuit: digital Technology: CMOS Kind of integrated circuit: binary up/down counter; decade up/down counter Case: SOIC16 Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
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| 1N5407G | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 800V; 3A; Ifsm: 200A; DO27; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 0.8kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1V Leakage current: 50µA |
Produkt ist nicht verfügbar |
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MC100EPT25DG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; non-inverting Number of channels: 1 Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 2 Number of outputs: 1 Manufacturer series: 100EPT |
Produkt ist nicht verfügbar |
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M74VHC1G126DFT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state |
Produkt ist nicht verfügbar |
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| M74VHC1G126DFT2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
Produkt ist nicht verfügbar |
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M74VHC1G126DTT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: TSOP5 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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| NLVVHC1G126DFT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 2÷5.5VDC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC88A Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Quiescent current: 40µA Application: automotive industry |
Produkt ist nicht verfügbar |
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MMSD103T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOD123; Ufmax: 1.25V; 400mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD123 Max. forward voltage: 1.25V Leakage current: 0.1mA Power dissipation: 0.4W |
auf Bestellung 1917 Stücke: Lieferzeit 14-21 Tag (e) |
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FDFS2P106A | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SO8 Mounting: SMD Case: SO8 Power dissipation: 1.6W Polarisation: unipolar Drain current: -3A Kind of channel: enhanced Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 192mΩ |
Produkt ist nicht verfügbar |
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| FDY1002PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.83A Power dissipation: 0.625W Case: SOT563F Gate-source voltage: ±8V On-state resistance: 0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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FDY101PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.15A; 0.625W; SOT523 Mounting: SMD Power dissipation: 0.625W Gate charge: 1.4nC Polarisation: unipolar Technology: PowerTrench® Drain current: -0.15A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SOT523 On-state resistance: 20Ω |
auf Bestellung 2793 Stücke: Lieferzeit 14-21 Tag (e) |
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FDH210N08 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 132A; Idm: 840A; 462W; TO247 Mounting: THT Pulsed drain current: 840A Power dissipation: 462W Gate charge: 301nC Polarisation: unipolar Drain current: 132A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO247 On-state resistance: 5.5mΩ |
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| FDMA1027P | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -6A; MicroFET Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -6A Case: MicroFET Gate-source voltage: ±8V On-state resistance: 0.24Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
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FDMA1028NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Power dissipation: 1.4W Case: MicroFET Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMA1029PZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.1A; Idm: -6A; 1.4W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -6A Power dissipation: 1.4W Case: MicroFET Gate-source voltage: ±12V On-state resistance: 141mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDME1023PZT | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.6A; Idm: -6A; 1.4W Mounting: SMD Pulsed drain current: -6A Power dissipation: 1.4W Gate charge: 7.7nC Polarisation: unipolar Drain current: -2.6A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: MicroFET On-state resistance: 530mΩ |
Produkt ist nicht verfügbar |
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FDB86102LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK Technology: UniFET™ Mounting: SMD Case: D2PAK Kind of package: reel; tape Kind of channel: enhanced Power dissipation: 3.1W On-state resistance: 42mΩ Polarisation: unipolar Gate charge: 21nC Gate-source voltage: ±20V Pulsed drain current: 50A Drain-source voltage: 100V Drain current: 30A Type of transistor: N-MOSFET |
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| FDMA910PZ | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9.4A Pulsed drain current: -45A Power dissipation: 2.4W Case: MicroFET Gate-source voltage: ±8V On-state resistance: 34mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
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MC74LCX32DTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Family: LCX |
auf Bestellung 437 Stücke: Lieferzeit 14-21 Tag (e) |
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| NRVTSM260EV2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; POWERMITE; reel,tape Case: POWERMITE Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 60V Application: automotive industry Type of diode: Schottky rectifying Max. load current: 4A Max. forward voltage: 0.65V Load current: 2A Max. forward impulse current: 50A |
Produkt ist nicht verfügbar |
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| NRVTSM260EV2T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 2A; POWERMITE; reel,tape Case: POWERMITE Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 60V Application: automotive industry Type of diode: Schottky rectifying Max. load current: 4A Max. forward voltage: 0.65V Load current: 2A Max. forward impulse current: 50A |
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| SS38 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 80V; 3A; SMC; reel,tape; 2.27W Type of diode: Schottky rectifying; Schottky rectifying Mounting: SMD; SMD Max. off-state voltage: 80V; 80V Load current: 3A; 3A Semiconductor structure: single diode; single diode Max. forward voltage: 0.85V; 0.85V Case: SMC; SMC Kind of package: reel; tape; reel; tape Max. forward impulse current: 100A; 100A Power dissipation: 2.27W; 2.27W |
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| FDMC007N30D | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/29A; 1.9/2.5W; WDFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 18/29A Power dissipation: 1.9/2.5W Case: WDFN8 Gate-source voltage: ±12/±12V On-state resistance: 16.3/9mΩ Mounting: SMD Gate charge: 17/34nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC7200S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 18/13A; Idm: 40÷27A Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18/13A Pulsed drain current: 40...27A Power dissipation: 1.9/2.9W Case: Power33 Gate-source voltage: ±20V On-state resistance: 30/13.1mΩ Mounting: SMD Gate charge: 10/22nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC7208S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/26A; 1.9W; Power33 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Case: Power33 Drain-source voltage: 30/30V Drain current: 22/26A On-state resistance: 12.4/7.5mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.9W Gate charge: 18/36nC Kind of channel: enhanced Gate-source voltage: ±20/±12V |
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| FDMC7672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 50A Power dissipation: 33W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC7680 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 31W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Pulsed drain current: 45A Power dissipation: 31W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
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FDMC7692 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Pulsed drain current: 40A Power dissipation: 29W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2993 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMC7692S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 27W; MLP8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Pulsed drain current: 45A Power dissipation: 27W Case: MLP8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMC7696 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 25W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Pulsed drain current: 50A Power dissipation: 25W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 15.7mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NCP81234MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 4.5÷20V; Uout: 5.2÷5.5V; QFN28; buck Type of integrated circuit: PMIC Input voltage: 4.5...20V Output voltage: 5.2...5.5V Frequency: 180...1320kHz Mounting: SMD Case: QFN28 Topology: buck Number of channels: 2 Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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TIL117M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 50%@10mA Case: DIP6 Turn-on time: 10µs Turn-off time: 10µs |
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| FXLA102L8X | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 1.1÷3.6VDC; SMD; MicorPAK8; -40÷85°C; reel,tape Supply voltage: 1.1...3.6V DC Operating temperature: -40...85°C Number of inputs: 2 Kind of package: reel; tape Case: MicorPAK8 Number of outputs: 2 Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting Number of channels: 2 Frequency: 140MHz Mounting: SMD Type of integrated circuit: digital Integrated circuit features: auto-direction sensing |
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| FXMA2102L8X | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1.65...5.5V DC Mounting: SMD Case: UQFN8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: 5V tolerant on inputs/outputs; open drain output Frequency: 37MHz |
Produkt ist nicht verfügbar |
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| FDMC86102L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 41W; MLP8 Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: MLP8 On-state resistance: 39mΩ Mounting: SMD Power dissipation: 41W Gate charge: 22nC Polarisation: unipolar Technology: PowerTrench® |
Produkt ist nicht verfügbar |
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| FDMS86102LZ | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 69W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Power dissipation: 69W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FXMAR2102L8X | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MicorPAK8; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator Number of channels: 2 Supply voltage: 1.65...5.5V DC Mounting: SMD Case: MicorPAK8 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 2 Number of outputs: 2 Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing Frequency: 50MHz Kind of output: open drain |
Produkt ist nicht verfügbar |
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MC74ACT373DTR2G | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; ACT; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 4.5...5.5V DC Mounting: SMD Case: TSSOP20 Manufacturer series: ACT Operating temperature: -40...85°C Trigger: level-triggered |
Produkt ist nicht verfügbar |
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MC74ACT373DWG | ONSEMI |
Category: Latches Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; TTL; SMD; ACT Type of integrated circuit: digital Kind of integrated circuit: 3-state; latch transparent; octal Number of channels: 8 Technology: TTL Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SOIC20 Manufacturer series: ACT Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Family: ACT |
auf Bestellung 142 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74ACT373DWR2G | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; SO20-W; ACT; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SO20-W Manufacturer series: ACT Operating temperature: -40...85°C Trigger: level-triggered |
Produkt ist nicht verfügbar |
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ESD9R3.3ST5G | ONSEMI |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; Ch: 1 Case: SOD923 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Max. forward impulse current: 1A Breakdown voltage: 4.8V Leakage current: 1nA Semiconductor structure: unidirectional Max. off-state voltage: 3.3V Type of diode: TVS Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.15W |
auf Bestellung 1572 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDPF3860T |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.7A; 33.8W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.7A
Power dissipation: 33.8W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 38.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.7A; 33.8W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.7A
Power dissipation: 33.8W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 38.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FSA1208BQX |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 8; MLP20; 2.3÷4.3VDC; reel,tape; OUT: 8PST-NO
Type of integrated circuit: analog switch
Number of channels: 8
Case: MLP20
Supply voltage: 2.3...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: 8PST-NO
Quiescent current: 1µA
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 8; MLP20; 2.3÷4.3VDC; reel,tape; OUT: 8PST-NO
Type of integrated circuit: analog switch
Number of channels: 8
Case: MLP20
Supply voltage: 2.3...4.3V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: 8PST-NO
Quiescent current: 1µA
Technology: CMOS; TTL
Produkt ist nicht verfügbar
| MC74LVX4051MNTWG |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; QFN16; 2.5÷6VDC
Type of integrated circuit: digital
Case: QFN16
Supply voltage: 2.5...6V DC
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: LVX
Number of channels: 1
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 80µA
Kind of package: reel; tape
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; QFN16; 2.5÷6VDC
Type of integrated circuit: digital
Case: QFN16
Supply voltage: 2.5...6V DC
Mounting: SMD
Operating temperature: -55...125°C
Manufacturer series: LVX
Number of channels: 1
Technology: CMOS
Kind of integrated circuit: demultiplexer; multiplexer
Quiescent current: 80µA
Kind of package: reel; tape
Produkt ist nicht verfügbar
| FDMC007N08LC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 42A; Idm: 330A; 57W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 42A
Pulsed drain current: 330A
Power dissipation: 57W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC007N08LCDC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 339A
Mounting: SMD
Case: PQFN8
Drain-source voltage: 80V
Drain current: 41A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; Idm: 339A; 57W; PQFN8
Gate charge: 44nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 339A
Mounting: SMD
Case: PQFN8
Drain-source voltage: 80V
Drain current: 41A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
| FDMC008N08C |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; Idm: 273A; 57W; Power33
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Pulsed drain current: 273A
Power dissipation: 57W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 38A; Idm: 273A; 57W; Power33
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 38A
Pulsed drain current: 273A
Power dissipation: 57W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC010N08C |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 206A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 206A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 206A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 206A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC010N08LC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 200A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 200A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18.4mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; Idm: 200A; 52W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 32A
Pulsed drain current: 200A
Power dissipation: 52W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 18.4mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC2610 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.5A; 42W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.5A
Power dissipation: 42W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 397mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC2674 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 220V; 7A; Idm: 13.8A; 42W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 220V
Drain current: 7A
Pulsed drain current: 13.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 814mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 220V; 7A; Idm: 13.8A; 42W; MLP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 220V
Drain current: 7A
Pulsed drain current: 13.8A
Power dissipation: 42W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 814mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC3020DC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 100A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC3612 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC3612-L701 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12A; Idm: 15A; 35W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 15A
Power dissipation: 35W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC4D9P20X8 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
Gate-source voltage: ±12V
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -47A; Idm: -335A; 40W; PQFN8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -47A
Pulsed drain current: -335A
Power dissipation: 40W
Case: PQFN8
Gate-source voltage: ±12V
On-state resistance: 16.4mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC5614P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13.5A; 42W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Drain-source voltage: -60V
Drain current: -13.5A
On-state resistance: 168mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13.5A; 42W; WDFN8
Case: WDFN8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 42W
Drain-source voltage: -60V
Drain current: -13.5A
On-state resistance: 168mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| FDMC610P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -80A; Idm: -200A; 48W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -80A
Pulsed drain current: -200A
Power dissipation: 48W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -80A; Idm: -200A; 48W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -80A
Pulsed drain current: -200A
Power dissipation: 48W
Case: Power33
Gate-source voltage: ±8V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC7200 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 1.9/2.2W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 1.9/2.2W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 35.5/18mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 1.9/2.2W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 1.9/2.2W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 35.5/18mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC7570S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PQFN8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 59W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; Idm: 120A; 59W; PQFN8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 68nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 120A
Case: PQFN8
Drain-source voltage: 25V
Drain current: 40A
On-state resistance: 2.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 59W
Produkt ist nicht verfügbar
| MC14029BDR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary up/down counter,decade up/down counter
Type of integrated circuit: digital
Kind of integrated circuit: binary up/down counter; decade up/down counter
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Category: Counters/dividers
Description: IC: digital; binary up/down counter,decade up/down counter
Type of integrated circuit: digital
Kind of integrated circuit: binary up/down counter; decade up/down counter
Technology: CMOS
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Produkt ist nicht verfügbar
| NLV14029BDR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; binary up/down counter,decade up/down counter
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: binary up/down counter; decade up/down counter
Case: SOIC16
Supply voltage: 3...18V DC
Category: Counters/dividers
Description: IC: digital; binary up/down counter,decade up/down counter
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: reel; tape
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: binary up/down counter; decade up/down counter
Case: SOIC16
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
| 1N5407G |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 800V; 3A; Ifsm: 200A; DO27; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: switching; THT; 800V; 3A; Ifsm: 200A; DO27; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1V
Leakage current: 50µA
Produkt ist nicht verfügbar
| MC100EPT25DG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; non-inverting
Number of channels: 1
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 2
Number of outputs: 1
Manufacturer series: 100EPT
Produkt ist nicht verfügbar
| M74VHC1G126DFT1G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Produkt ist nicht verfügbar
| M74VHC1G126DFT2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Produkt ist nicht verfügbar
| M74VHC1G126DTT1G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; TSOP5; VHC; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSOP5
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 4.46 EUR |
| NLVVHC1G126DFT1G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Application: automotive industry
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; 2÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Quiescent current: 40µA
Application: automotive industry
Produkt ist nicht verfügbar
| MMSD103T1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOD123; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD123
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Power dissipation: 0.4W
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOD123; Ufmax: 1.25V; 400mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD123
Max. forward voltage: 1.25V
Leakage current: 0.1mA
Power dissipation: 0.4W
auf Bestellung 1917 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 642+ | 0.11 EUR |
| 1603+ | 0.045 EUR |
| 1819+ | 0.039 EUR |
| 1917+ | 0.037 EUR |
| FDFS2P106A |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 192mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SO8
Mounting: SMD
Case: SO8
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -3A
Kind of channel: enhanced
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 192mΩ
Produkt ist nicht verfügbar
| FDY1002PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.83A
Power dissipation: 0.625W
Case: SOT563F
Gate-source voltage: ±8V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -0.83A; 0.625W; SOT563F
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.83A
Power dissipation: 0.625W
Case: SOT563F
Gate-source voltage: ±8V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| FDY101PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.15A; 0.625W; SOT523
Mounting: SMD
Power dissipation: 0.625W
Gate charge: 1.4nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -0.15A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT523
On-state resistance: 20Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.15A; 0.625W; SOT523
Mounting: SMD
Power dissipation: 0.625W
Gate charge: 1.4nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -0.15A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT523
On-state resistance: 20Ω
auf Bestellung 2793 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 223+ | 0.32 EUR |
| 249+ | 0.29 EUR |
| 323+ | 0.22 EUR |
| 342+ | 0.21 EUR |
| FDH210N08 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 132A; Idm: 840A; 462W; TO247
Mounting: THT
Pulsed drain current: 840A
Power dissipation: 462W
Gate charge: 301nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247
On-state resistance: 5.5mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 132A; Idm: 840A; 462W; TO247
Mounting: THT
Pulsed drain current: 840A
Power dissipation: 462W
Gate charge: 301nC
Polarisation: unipolar
Drain current: 132A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247
On-state resistance: 5.5mΩ
Produkt ist nicht verfügbar
| FDMA1027P |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -6A; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -6A
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3A; Idm: -6A; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -6A
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMA1028NZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; 1.4W; MicroFET
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMA1029PZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.1A; Idm: -6A; 1.4W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -6A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 141mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.1A; Idm: -6A; 1.4W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.1A
Pulsed drain current: -6A
Power dissipation: 1.4W
Case: MicroFET
Gate-source voltage: ±12V
On-state resistance: 141mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDME1023PZT |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.6A; Idm: -6A; 1.4W
Mounting: SMD
Pulsed drain current: -6A
Power dissipation: 1.4W
Gate charge: 7.7nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 530mΩ
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.6A; Idm: -6A; 1.4W
Mounting: SMD
Pulsed drain current: -6A
Power dissipation: 1.4W
Gate charge: 7.7nC
Polarisation: unipolar
Drain current: -2.6A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: MicroFET
On-state resistance: 530mΩ
Produkt ist nicht verfügbar
| FDB86102LZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK
Technology: UniFET™
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 42mΩ
Polarisation: unipolar
Gate charge: 21nC
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 100V
Drain current: 30A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 50A; 3.1W; D2PAK
Technology: UniFET™
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Kind of channel: enhanced
Power dissipation: 3.1W
On-state resistance: 42mΩ
Polarisation: unipolar
Gate charge: 21nC
Gate-source voltage: ±20V
Pulsed drain current: 50A
Drain-source voltage: 100V
Drain current: 30A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| FDMA910PZ |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9.4A
Pulsed drain current: -45A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9.4A; Idm: -45A; 2.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9.4A
Pulsed drain current: -45A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MC74LCX32DTG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Family: LCX
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 157+ | 0.46 EUR |
| 235+ | 0.3 EUR |
| 283+ | 0.25 EUR |
| 437+ | 0.16 EUR |
| NRVTSM260EV2T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; POWERMITE; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Application: automotive industry
Type of diode: Schottky rectifying
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; POWERMITE; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Application: automotive industry
Type of diode: Schottky rectifying
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
| NRVTSM260EV2T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; POWERMITE; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Application: automotive industry
Type of diode: Schottky rectifying
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 2A; POWERMITE; reel,tape
Case: POWERMITE
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 60V
Application: automotive industry
Type of diode: Schottky rectifying
Max. load current: 4A
Max. forward voltage: 0.65V
Load current: 2A
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
| SS38 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 3A; SMC; reel,tape; 2.27W
Type of diode: Schottky rectifying; Schottky rectifying
Mounting: SMD; SMD
Max. off-state voltage: 80V; 80V
Load current: 3A; 3A
Semiconductor structure: single diode; single diode
Max. forward voltage: 0.85V; 0.85V
Case: SMC; SMC
Kind of package: reel; tape; reel; tape
Max. forward impulse current: 100A; 100A
Power dissipation: 2.27W; 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 80V; 3A; SMC; reel,tape; 2.27W
Type of diode: Schottky rectifying; Schottky rectifying
Mounting: SMD; SMD
Max. off-state voltage: 80V; 80V
Load current: 3A; 3A
Semiconductor structure: single diode; single diode
Max. forward voltage: 0.85V; 0.85V
Case: SMC; SMC
Kind of package: reel; tape; reel; tape
Max. forward impulse current: 100A; 100A
Power dissipation: 2.27W; 2.27W
Produkt ist nicht verfügbar
| FDMC007N30D |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/29A; 1.9/2.5W; WDFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/29A
Power dissipation: 1.9/2.5W
Case: WDFN8
Gate-source voltage: ±12/±12V
On-state resistance: 16.3/9mΩ
Mounting: SMD
Gate charge: 17/34nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 18/29A; 1.9/2.5W; WDFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 18/29A
Power dissipation: 1.9/2.5W
Case: WDFN8
Gate-source voltage: ±12/±12V
On-state resistance: 16.3/9mΩ
Mounting: SMD
Gate charge: 17/34nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC7200S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 18/13A; Idm: 40÷27A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18/13A
Pulsed drain current: 40...27A
Power dissipation: 1.9/2.9W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 30/13.1mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 18/13A; Idm: 40÷27A
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18/13A
Pulsed drain current: 40...27A
Power dissipation: 1.9/2.9W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 30/13.1mΩ
Mounting: SMD
Gate charge: 10/22nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC7208S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/26A; 1.9W; Power33
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: Power33
Drain-source voltage: 30/30V
Drain current: 22/26A
On-state resistance: 12.4/7.5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.9W
Gate charge: 18/36nC
Kind of channel: enhanced
Gate-source voltage: ±20/±12V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/26A; 1.9W; Power33
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Case: Power33
Drain-source voltage: 30/30V
Drain current: 22/26A
On-state resistance: 12.4/7.5mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.9W
Gate charge: 18/36nC
Kind of channel: enhanced
Gate-source voltage: ±20/±12V
Produkt ist nicht verfügbar
| FDMC7672 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 33W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 33W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC7680 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Pulsed drain current: 45A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 31W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Pulsed drain current: 45A
Power dissipation: 31W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC7692 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; Idm: 40A; 29W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Pulsed drain current: 40A
Power dissipation: 29W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2993 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 55+ | 1.31 EUR |
| 78+ | 0.92 EUR |
| 100+ | 0.72 EUR |
| 107+ | 0.67 EUR |
| FDMC7692S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 27W; MLP8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Pulsed drain current: 45A
Power dissipation: 27W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; Idm: 45A; 27W; MLP8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Pulsed drain current: 45A
Power dissipation: 27W
Case: MLP8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMC7696 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 25W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 25W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 15.7mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 25W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 25W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 15.7mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NCP81234MNTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; Uout: 5.2÷5.5V; QFN28; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...20V
Output voltage: 5.2...5.5V
Frequency: 180...1320kHz
Mounting: SMD
Case: QFN28
Topology: buck
Number of channels: 2
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; Uout: 5.2÷5.5V; QFN28; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...20V
Output voltage: 5.2...5.5V
Frequency: 180...1320kHz
Mounting: SMD
Case: QFN28
Topology: buck
Number of channels: 2
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
| TIL117M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 50%@10mA
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 50%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 50%@10mA
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Produkt ist nicht verfügbar
| FXLA102L8X |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.1÷3.6VDC; SMD; MicorPAK8; -40÷85°C; reel,tape
Supply voltage: 1.1...3.6V DC
Operating temperature: -40...85°C
Number of inputs: 2
Kind of package: reel; tape
Case: MicorPAK8
Number of outputs: 2
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 2
Frequency: 140MHz
Mounting: SMD
Type of integrated circuit: digital
Integrated circuit features: auto-direction sensing
Category: Level translators
Description: IC: digital; Ch: 2; 1.1÷3.6VDC; SMD; MicorPAK8; -40÷85°C; reel,tape
Supply voltage: 1.1...3.6V DC
Operating temperature: -40...85°C
Number of inputs: 2
Kind of package: reel; tape
Case: MicorPAK8
Number of outputs: 2
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 2
Frequency: 140MHz
Mounting: SMD
Type of integrated circuit: digital
Integrated circuit features: auto-direction sensing
Produkt ist nicht verfügbar
| FXMA2102L8X |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: UQFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; open drain output
Frequency: 37MHz
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; UQFN8; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: UQFN8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; open drain output
Frequency: 37MHz
Produkt ist nicht verfügbar
| FDMC86102L |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41W; MLP8
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: MLP8
On-state resistance: 39mΩ
Mounting: SMD
Power dissipation: 41W
Gate charge: 22nC
Polarisation: unipolar
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 41W; MLP8
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: MLP8
On-state resistance: 39mΩ
Mounting: SMD
Power dissipation: 41W
Gate charge: 22nC
Polarisation: unipolar
Technology: PowerTrench®
Produkt ist nicht verfügbar
| FDMS86102LZ |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 69W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 69W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 69W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 69W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FXMAR2102L8X |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MicorPAK8; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: MicorPAK8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Frequency: 50MHz
Kind of output: open drain
Category: Level translators
Description: IC: digital; Ch: 2; 1.65÷5.5VDC; SMD; MicorPAK8; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: MicorPAK8
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 2
Number of outputs: 2
Integrated circuit features: 5V tolerant on inputs/outputs; auto-direction sensing
Frequency: 50MHz
Kind of output: open drain
Produkt ist nicht verfügbar
| MC74ACT373DTR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: ACT
Operating temperature: -40...85°C
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; TSSOP20; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: ACT
Operating temperature: -40...85°C
Trigger: level-triggered
Produkt ist nicht verfügbar
| MC74ACT373DWG |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; TTL; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Family: ACT
Category: Latches
Description: IC: digital; 3-state,octal,latch transparent; Ch: 8; TTL; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; latch transparent; octal
Number of channels: 8
Technology: TTL
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SOIC20
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Family: ACT
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 49+ | 1.49 EUR |
| 53+ | 1.36 EUR |
| 75+ | 0.96 EUR |
| 79+ | 0.91 EUR |
| MC74ACT373DWR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; SO20-W; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: ACT
Operating temperature: -40...85°C
Trigger: level-triggered
Category: Latches
Description: IC: digital; D latch; Ch: 8; 4.5÷5.5VDC; SMD; SO20-W; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO20-W
Manufacturer series: ACT
Operating temperature: -40...85°C
Trigger: level-triggered
Produkt ist nicht verfügbar
| ESD9R3.3ST5G |
|
Hersteller: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; Ch: 1
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Max. forward impulse current: 1A
Breakdown voltage: 4.8V
Leakage current: 1nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Type of diode: TVS
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.15W
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 4.8V; 1A; unidirectional; SOD923; reel,tape; Ch: 1
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Max. forward impulse current: 1A
Breakdown voltage: 4.8V
Leakage current: 1nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
Type of diode: TVS
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.15W
auf Bestellung 1572 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 125+ | 0.57 EUR |
| 140+ | 0.51 EUR |
| 182+ | 0.39 EUR |
| 193+ | 0.37 EUR |