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SZMM3Z18VT1G SZMM3Z18VT1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 18V 300MW SOD323
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
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3000+0.048 EUR
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SZMM3Z18VT1G SZMM3Z18VT1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 18V 300MW SOD323
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
auf Bestellung 50710 Stücke:
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100+0.18 EUR
182+0.097 EUR
204+0.087 EUR
500+0.074 EUR
1000+0.067 EUR
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CAT25320VE-GC CAT25320VE-GC onsemi ONSM-S-A0001341349-1.pdf?t.download=true&u=5oefqw Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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2SC6024-TL-E 2SC6024-TL-E onsemi 2156_2SC6024.pdf Description: RF TRANS NPN 3.5V 14GHZ 3-SSFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 9dB ~ 10.5dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Supplier Device Package: 3-SSFP
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2SC6044-TD-E onsemi SNYOS15133-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 30V 2A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
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2SC6089-CA onsemi Description: BIP NPN 10A 700V
Packaging: Bulk
auf Bestellung 15390 Stücke:
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2SC6091 2SC6091 onsemi SNYOS11425-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 700V 8A TO-3PMLH
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 3 W
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 4.5A
Supplier Device Package: TO-3PMLH
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2SC6014-TD-E onsemi Description: BIP NPN 5A 30V
Packaging: Bulk
auf Bestellung 22000 Stücke:
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NTMFD5C470NLT1G NTMFD5C470NLT1G onsemi ntmfd5c470nl-d.pdf Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
auf Bestellung 5713 Stücke:
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10+3.89 EUR
100+3.1 EUR
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NTMFD5C446NLT1G NTMFD5C446NLT1G onsemi ntmfd5c446nl-d.pdf Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Produkt ist nicht verfügbar
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NTMFD5C446NLT1G NTMFD5C446NLT1G onsemi ntmfd5c446nl-d.pdf Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
auf Bestellung 728 Stücke:
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4+5.1 EUR
10+3.31 EUR
100+2.29 EUR
500+1.86 EUR
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NLV17SZ126DFT2G NLV17SZ126DFT2G onsemi nl17sz126-d.pdf Description: IC BUFFER NON-INVERT 5.5V SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
auf Bestellung 9000 Stücke:
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3000+0.41 EUR
6000+0.4 EUR
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DTA143TXV3T1 DTA143TXV3T1 onsemi ONSMS09364-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
auf Bestellung 96000 Stücke:
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6662+0.088 EUR
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MC7809CTG MC7809CTG onsemi mc7800-d.pdf description Description: IC REG LINEAR 9V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 6791 Stücke:
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22+0.81 EUR
31+0.57 EUR
50+0.48 EUR
100+0.45 EUR
250+0.41 EUR
500+0.39 EUR
1000+0.38 EUR
2500+0.36 EUR
5000+0.35 EUR
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BC846CLT1G BC846CLT1G onsemi bc846alt1-d.pdf Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 225 mW
auf Bestellung 36000 Stücke:
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3000+0.038 EUR
6000+0.034 EUR
9000+0.032 EUR
15000+0.029 EUR
21000+0.028 EUR
30000+0.026 EUR
Mindestbestellmenge: 3000
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SN74LS30DR2 SN74LS30DR2 onsemi RSELS23512-1.pdf?t.download=true&u=5oefqw Description: IC GATE NAND
Packaging: Bulk
Part Status: Active
auf Bestellung 57500 Stücke:
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4438+0.12 EUR
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SN74LS30MEL SN74LS30MEL onsemi Description: 8 INPUT POSITIVE NAND GATE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MC74VHC139M MC74VHC139M onsemi ONSMS12074-1.pdf?t.download=true&u=5oefqw Description: DECODER/DRIVER, AHC/VHC SERIES
Packaging: Bulk
auf Bestellung 5650 Stücke:
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2597+0.18 EUR
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MC74VHC139DTR2 MC74VHC139DTR2 onsemi MC74VHC139-D.pdf Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
auf Bestellung 10000 Stücke:
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2427+0.19 EUR
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MC74VHC139D MC74VHC139D onsemi ONSMS12074-1.pdf?t.download=true&u=5oefqw Description: DECODER/DRIVER, AHC/VHC SERIES
Packaging: Bulk
auf Bestellung 14160 Stücke:
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1817+0.26 EUR
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MC74VHC139DT MC74VHC139DT onsemi ONSMS12074-1.pdf?t.download=true&u=5oefqw Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
auf Bestellung 10075 Stücke:
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2184+0.22 EUR
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NVMFD5C650NLWFT1G NVMFD5C650NLWFT1G onsemi nvmfd5c650nl-d.pdf Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
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1500+3.4 EUR
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NVMFD5C650NLWFT1G NVMFD5C650NLWFT1G onsemi nvmfd5c650nl-d.pdf Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1929 Stücke:
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2+8.84 EUR
10+5.9 EUR
100+4.24 EUR
500+4.16 EUR
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2SC5966-CA onsemi Description: BIP NPN 20A 800V
Packaging: Bulk
Part Status: Active
auf Bestellung 5992 Stücke:
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226+2.16 EUR
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NTLJS7D2P02P8ZTAG NTLJS7D2P02P8ZTAG onsemi ntljs7d2p02p8z-d.pdf Description: MOSFET P-CH 20V 7.9A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
auf Bestellung 30000 Stücke:
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3000+0.53 EUR
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NTLJS7D2P02P8ZTAG NTLJS7D2P02P8ZTAG onsemi ntljs7d2p02p8z-d.pdf Description: MOSFET P-CH 20V 7.9A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
auf Bestellung 36114 Stücke:
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8+2.31 EUR
13+1.46 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.69 EUR
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NTLJS5D0N03CTAG NTLJS5D0N03CTAG onsemi ntljs5d0n03c-d.pdf Description: MOSFET N-CH 30V 11.2A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
auf Bestellung 27000 Stücke:
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3000+0.5 EUR
9000+0.49 EUR
Mindestbestellmenge: 3000
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NTLJS5D0N03CTAG NTLJS5D0N03CTAG onsemi ntljs5d0n03c-d.pdf Description: MOSFET N-CH 30V 11.2A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
auf Bestellung 35828 Stücke:
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12+1.48 EUR
16+1.12 EUR
100+0.75 EUR
500+0.62 EUR
1000+0.58 EUR
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NTLJS3D0N02P8ZTAG NTLJS3D0N02P8ZTAG onsemi ntljs3d0n02p8z-d.pdf Description: MOSFET N-CH 20V 12.1A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
auf Bestellung 6000 Stücke:
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NTLJS3D0N02P8ZTAG NTLJS3D0N02P8ZTAG onsemi ntljs3d0n02p8z-d.pdf Description: MOSFET N-CH 20V 12.1A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
auf Bestellung 7088 Stücke:
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500+0.69 EUR
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NTLJS17D0P03P8ZTAG NTLJS17D0P03P8ZTAG onsemi ntljs17d0p03p8z-d.pdf Description: MOSFET P-CH 30V 7A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
auf Bestellung 3000 Stücke:
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NTLJS17D0P03P8ZTAG NTLJS17D0P03P8ZTAG onsemi ntljs17d0p03p8z-d.pdf Description: MOSFET P-CH 30V 7A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
auf Bestellung 5086 Stücke:
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11+1.62 EUR
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500+0.51 EUR
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NVTFWS014P04M8LTAG NVTFWS014P04M8LTAG onsemi nvtfs014p04m8l-d.pdf Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
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NVTFWS014P04M8LTAG NVTFWS014P04M8LTAG onsemi nvtfs014p04m8l-d.pdf Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 547 Stücke:
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NVTFWS9D6P04M8LTAG NVTFWS9D6P04M8LTAG onsemi nvtfs9d6p04m8l-d.pdf Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
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NVTFWS9D6P04M8LTAG NVTFWS9D6P04M8LTAG onsemi nvtfs9d6p04m8l-d.pdf Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9090 Stücke:
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NVMFS5C628NWFT1G NVMFS5C628NWFT1G onsemi nvmfs5c628n-d.pdf Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS5C628NWFT1G NVMFS5C628NWFT1G onsemi nvmfs5c628n-d.pdf Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 670 Stücke:
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500+2.19 EUR
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NXV04V120DB1 NXV04V120DB1 onsemi nxv04v120db1-d.pdf Description: 3-PHASE INVERTER AUTOMOTI
Packaging: Tube
Package / Case: 19-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Grade: Automotive
Current: 160 A
Voltage: 40 V
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NC7S04M5-ON NC7S04M5-ON onsemi FAIRS22566-1.pdf?t.download=true&u=5oefqw Description: INVERTER, HC/UH SERIES, 1 FUNC,
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LA6358NSLL-E onsemi MAXMS04747-1.pdf?t.download=true&u=5oefqw Description: IC OPAMP GP 2 CIRCUIT 9SIP
Packaging: Bulk
Package / Case: 9-SIP
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 9-SIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
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LA6358NLL-E LA6358NLL-E onsemi ONSMS36560-1.pdf?t.download=true&u=5oefqw Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
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LA6358NL-E LA6358NL-E onsemi ONSMS36560-1.pdf?t.download=true&u=5oefqw Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
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LA6358N-E LA6358N-E onsemi ONSMS36560-1.pdf?t.download=true&u=5oefqw Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
auf Bestellung 576 Stücke:
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SNRVUD620CTT4G SNRVUD620CTT4G onsemi murd620ct-d.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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SNRVUD620CTT4G SNRVUD620CTT4G onsemi murd620ct-d.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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21+0.88 EUR
100+0.7 EUR
500+0.53 EUR
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NRVUB1620CTT4G NRVUB1620CTT4G onsemi murb1620ct-d.pdf Description: DIODE GEN PURP 200V 8A D2PAK-3
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NRVUB1620CTT4G NRVUB1620CTT4G onsemi murb1620ct-d.pdf Description: DIODE GEN PURP 200V 8A D2PAK-3
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10+3.9 EUR
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NRVTS8100PFST3G NRVTS8100PFST3G onsemi NRTS8100PFS-D.PDF Description: DIODE SCHOTTKY 100V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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5000+0.51 EUR
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XCY99008BR2 onsemi Description: PWM CURRENT-MODE CONTROLLER
Packaging: Bulk
auf Bestellung 35000 Stücke:
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CS51021ED16 CS51021ED16 onsemi CHRYS00651-1.pdf?t.download=true&u=5oefqw Description: CURRENT MODE PWM CONTROLLER 1A
Packaging: Bulk
Part Status: Active
auf Bestellung 1728 Stücke:
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LV52206XA-TSD onsemi Description: SEU - MOBILE DRIVER, 33048080
Packaging: Bulk
Part Status: Active
auf Bestellung 95000 Stücke:
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2SC2344E onsemi Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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LC75844MHS-MPB-E LC75844MHS-MPB-E onsemi LC75844M_Rev2017.pdf Description: IC DRVR 88 SEGMENT 36MFPSDJ
Packaging: Tube
Package / Case: 36-SOP (0.311", 7.90mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 88 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 36-MFPSDJ
Part Status: Obsolete
Current - Supply: 230 µA
auf Bestellung 1523 Stücke:
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MJE18002 MJE18002 onsemi mje18002-d.pdf Description: TRANS NPN 450V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 50 W
auf Bestellung 4437 Stücke:
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MJE18002G MJE18002G onsemi mje18002-d.pdf Description: TRANS NPN 450V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 50 W
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SZMMBZ5226BLT1G SZMMBZ5226BLT1G onsemi mmbz5221blt1-d.pdf Description: DIODE ZENER 3.3V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 16320 Stücke:
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56+0.32 EUR
81+0.22 EUR
150+0.12 EUR
500+0.092 EUR
1000+0.064 EUR
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MC10H115FNR2G MC10H115FNR2G onsemi design-resources?notFound=MC10H115-D.PDF Description: IC RECEIVER 0/4 20PLCC
auf Bestellung 5737 Stücke:
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MC10H115FNR2 MC10H115FNR2 onsemi MC10H115-D.PDF Description: IC RECEIVER 0/4 20PLCC
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SB0030-04A-AT1 onsemi Description: DIODE SCHOTTKY 40V 30MA
Packaging: Bulk
Part Status: Active
auf Bestellung 705000 Stücke:
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6662+0.082 EUR
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SZMM3Z18VT1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
SZMM3Z18VT1G
Hersteller: onsemi
Description: DIODE ZENER 18V 300MW SOD323
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
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3000+0.048 EUR
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SZMM3Z18VT1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
SZMM3Z18VT1G
Hersteller: onsemi
Description: DIODE ZENER 18V 300MW SOD323
Tolerance: ±6%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
auf Bestellung 50710 Stücke:
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Anzahl Preis
100+0.18 EUR
182+0.097 EUR
204+0.087 EUR
500+0.074 EUR
1000+0.067 EUR
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CAT25320VE-GC ONSM-S-A0001341349-1.pdf?t.download=true&u=5oefqw
CAT25320VE-GC
Hersteller: onsemi
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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533+0.91 EUR
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2SC6024-TL-E 2156_2SC6024.pdf
2SC6024-TL-E
Hersteller: onsemi
Description: RF TRANS NPN 3.5V 14GHZ 3-SSFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 9dB ~ 10.5dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
Supplier Device Package: 3-SSFP
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Anzahl Preis
2597+0.18 EUR
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2SC6044-TD-E SNYOS15133-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: TRANS NPN 30V 2A PCP
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 75mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 400MHz
Supplier Device Package: PCP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1.3 W
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1817+0.26 EUR
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2SC6089-CA
Hersteller: onsemi
Description: BIP NPN 10A 700V
Packaging: Bulk
auf Bestellung 15390 Stücke:
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271+1.69 EUR
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2SC6091 SNYOS11425-1.pdf?t.download=true&u=5oefqw
2SC6091
Hersteller: onsemi
Description: TRANS NPN 700V 8A TO-3PMLH
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 3 W
Vce Saturation (Max) @ Ib, Ic: 2V @ 900mA, 4.5A
Supplier Device Package: TO-3PMLH
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Anzahl Preis
329+1.48 EUR
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2SC6014-TD-E
Hersteller: onsemi
Description: BIP NPN 5A 30V
Packaging: Bulk
auf Bestellung 22000 Stücke:
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Anzahl Preis
26+18.55 EUR
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NTMFD5C470NLT1G ntmfd5c470nl-d.pdf
NTMFD5C470NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 11A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 24W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 25V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
auf Bestellung 5713 Stücke:
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Anzahl Preis
4+4.7 EUR
10+3.89 EUR
100+3.1 EUR
500+2.62 EUR
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NTMFD5C446NLT1G ntmfd5c446nl-d.pdf
NTMFD5C446NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Produkt ist nicht verfügbar
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NTMFD5C446NLT1G ntmfd5c446nl-d.pdf
NTMFD5C446NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 25A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 145A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3170pF @ 25V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
auf Bestellung 728 Stücke:
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Anzahl Preis
4+5.1 EUR
10+3.31 EUR
100+2.29 EUR
500+1.86 EUR
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NLV17SZ126DFT2G nl17sz126-d.pdf
NLV17SZ126DFT2G
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
auf Bestellung 9000 Stücke:
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Anzahl Preis
3000+0.41 EUR
6000+0.4 EUR
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DTA143TXV3T1 ONSMS09364-1.pdf?t.download=true&u=5oefqw
DTA143TXV3T1
Hersteller: onsemi
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
auf Bestellung 96000 Stücke:
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Anzahl Preis
6662+0.088 EUR
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MC7809CTG description mc7800-d.pdf
MC7809CTG
Hersteller: onsemi
Description: IC REG LINEAR 9V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220
Voltage - Output (Min/Fixed): 9V
Part Status: Active
PSRR: 61dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 6791 Stücke:
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Anzahl Preis
22+0.81 EUR
31+0.57 EUR
50+0.48 EUR
100+0.45 EUR
250+0.41 EUR
500+0.39 EUR
1000+0.38 EUR
2500+0.36 EUR
5000+0.35 EUR
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BC846CLT1G bc846alt1-d.pdf
BC846CLT1G
Hersteller: onsemi
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 225 mW
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.038 EUR
6000+0.034 EUR
9000+0.032 EUR
15000+0.029 EUR
21000+0.028 EUR
30000+0.026 EUR
Mindestbestellmenge: 3000
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SN74LS30DR2 RSELS23512-1.pdf?t.download=true&u=5oefqw
SN74LS30DR2
Hersteller: onsemi
Description: IC GATE NAND
Packaging: Bulk
Part Status: Active
auf Bestellung 57500 Stücke:
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Anzahl Preis
4438+0.12 EUR
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SN74LS30MEL
SN74LS30MEL
Hersteller: onsemi
Description: 8 INPUT POSITIVE NAND GATE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MC74VHC139M ONSMS12074-1.pdf?t.download=true&u=5oefqw
MC74VHC139M
Hersteller: onsemi
Description: DECODER/DRIVER, AHC/VHC SERIES
Packaging: Bulk
auf Bestellung 5650 Stücke:
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Anzahl Preis
2597+0.18 EUR
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MC74VHC139DTR2 MC74VHC139-D.pdf
MC74VHC139DTR2
Hersteller: onsemi
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
auf Bestellung 10000 Stücke:
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Anzahl Preis
2427+0.19 EUR
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MC74VHC139D ONSMS12074-1.pdf?t.download=true&u=5oefqw
MC74VHC139D
Hersteller: onsemi
Description: DECODER/DRIVER, AHC/VHC SERIES
Packaging: Bulk
auf Bestellung 14160 Stücke:
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Anzahl Preis
1817+0.26 EUR
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MC74VHC139DT ONSMS12074-1.pdf?t.download=true&u=5oefqw
MC74VHC139DT
Hersteller: onsemi
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
auf Bestellung 10075 Stücke:
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Anzahl Preis
2184+0.22 EUR
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NVMFD5C650NLWFT1G nvmfd5c650nl-d.pdf
NVMFD5C650NLWFT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
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Anzahl Preis
1500+3.4 EUR
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NVMFD5C650NLWFT1G nvmfd5c650nl-d.pdf
NVMFD5C650NLWFT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 21A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 125W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 111A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2546pF @ 25V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 98µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1929 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.84 EUR
10+5.9 EUR
100+4.24 EUR
500+4.16 EUR
Mindestbestellmenge: 2
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2SC5966-CA
Hersteller: onsemi
Description: BIP NPN 20A 800V
Packaging: Bulk
Part Status: Active
auf Bestellung 5992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
226+2.16 EUR
Mindestbestellmenge: 226
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NTLJS7D2P02P8ZTAG ntljs7d2p02p8z-d.pdf
NTLJS7D2P02P8ZTAG
Hersteller: onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.53 EUR
Mindestbestellmenge: 3000
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NTLJS7D2P02P8ZTAG ntljs7d2p02p8z-d.pdf
NTLJS7D2P02P8ZTAG
Hersteller: onsemi
Description: MOSFET P-CH 20V 7.9A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 26.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 10 V
auf Bestellung 36114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.31 EUR
13+1.46 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.69 EUR
Mindestbestellmenge: 8
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NTLJS5D0N03CTAG ntljs5d0n03c-d.pdf
NTLJS5D0N03CTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.2A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.5 EUR
9000+0.49 EUR
Mindestbestellmenge: 3000
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NTLJS5D0N03CTAG ntljs5d0n03c-d.pdf
NTLJS5D0N03CTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.2A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.38mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
auf Bestellung 35828 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
16+1.12 EUR
100+0.75 EUR
500+0.62 EUR
1000+0.58 EUR
Mindestbestellmenge: 12
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NTLJS3D0N02P8ZTAG ntljs3d0n02p8z-d.pdf
NTLJS3D0N02P8ZTAG
Hersteller: onsemi
Description: MOSFET N-CH 20V 12.1A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.53 EUR
6000+0.5 EUR
Mindestbestellmenge: 3000
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NTLJS3D0N02P8ZTAG ntljs3d0n02p8z-d.pdf
NTLJS3D0N02P8ZTAG
Hersteller: onsemi
Description: MOSFET N-CH 20V 12.1A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 10A, 4.5V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2165 pF @ 10 V
auf Bestellung 7088 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.64 EUR
16+1.11 EUR
100+0.84 EUR
500+0.69 EUR
1000+0.6 EUR
Mindestbestellmenge: 11
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NTLJS17D0P03P8ZTAG ntljs17d0p03p8z-d.pdf
NTLJS17D0P03P8ZTAG
Hersteller: onsemi
Description: MOSFET P-CH 30V 7A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.4 EUR
Mindestbestellmenge: 3000
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NTLJS17D0P03P8ZTAG ntljs17d0p03p8z-d.pdf
NTLJS17D0P03P8ZTAG
Hersteller: onsemi
Description: MOSFET P-CH 30V 7A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 10A, 10V
Power Dissipation (Max): 860mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-PQFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
auf Bestellung 5086 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.62 EUR
18+1.02 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.46 EUR
Mindestbestellmenge: 11
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NVTFWS014P04M8LTAG nvtfs014p04m8l-d.pdf
NVTFWS014P04M8LTAG
Hersteller: onsemi
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVTFWS014P04M8LTAG nvtfs014p04m8l-d.pdf
NVTFWS014P04M8LTAG
Hersteller: onsemi
Description: MOSFET P-CH 40V 11.3A/49A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 547 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
14+1.27 EUR
100+0.96 EUR
500+0.76 EUR
Mindestbestellmenge: 10
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NVTFWS9D6P04M8LTAG nvtfs9d6p04m8l-d.pdf
NVTFWS9D6P04M8LTAG
Hersteller: onsemi
Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.75 EUR
3000+0.74 EUR
4500+0.72 EUR
7500+0.69 EUR
Mindestbestellmenge: 1500
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NVTFWS9D6P04M8LTAG nvtfs9d6p04m8l-d.pdf
NVTFWS9D6P04M8LTAG
Hersteller: onsemi
Description: MOSFET P-CH 40V 13A/64A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 9090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
11+1.65 EUR
100+1.13 EUR
500+0.92 EUR
Mindestbestellmenge: 8
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NVMFS5C628NWFT1G nvmfs5c628n-d.pdf
NVMFS5C628NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5C628NWFT1G nvmfs5c628n-d.pdf
NVMFS5C628NWFT1G
Hersteller: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 135µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.44 EUR
10+3.65 EUR
100+2.6 EUR
500+2.19 EUR
Mindestbestellmenge: 4
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NXV04V120DB1 nxv04v120db1-d.pdf
NXV04V120DB1
Hersteller: onsemi
Description: 3-PHASE INVERTER AUTOMOTI
Packaging: Tube
Package / Case: 19-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Grade: Automotive
Current: 160 A
Voltage: 40 V
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+47.24 EUR
44+29.46 EUR
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NC7S04M5-ON FAIRS22566-1.pdf?t.download=true&u=5oefqw
NC7S04M5-ON
Hersteller: onsemi
Description: INVERTER, HC/UH SERIES, 1 FUNC,
Produkt ist nicht verfügbar
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LA6358NSLL-E MAXMS04747-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 9SIP
Packaging: Bulk
Package / Case: 9-SIP
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 9-SIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
auf Bestellung 18024 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2664+0.19 EUR
Mindestbestellmenge: 2664
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LA6358NLL-E ONSMS36560-1.pdf?t.download=true&u=5oefqw
LA6358NLL-E
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
auf Bestellung 43543 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2049+0.25 EUR
Mindestbestellmenge: 2049
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LA6358NL-E ONSMS36560-1.pdf?t.download=true&u=5oefqw
LA6358NL-E
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
auf Bestellung 18180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2049+0.25 EUR
Mindestbestellmenge: 2049
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LA6358N-E ONSMS36560-1.pdf?t.download=true&u=5oefqw
LA6358N-E
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
auf Bestellung 576 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
346+1.47 EUR
Mindestbestellmenge: 346
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SNRVUD620CTT4G murd620ct-d.pdf
SNRVUD620CTT4G
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.38 EUR
5000+0.35 EUR
Mindestbestellmenge: 2500
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SNRVUD620CTT4G murd620ct-d.pdf
SNRVUD620CTT4G
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 5879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
21+0.88 EUR
100+0.7 EUR
500+0.53 EUR
1000+0.45 EUR
Mindestbestellmenge: 15
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NRVUB1620CTT4G murb1620ct-d.pdf
NRVUB1620CTT4G
Hersteller: onsemi
Description: DIODE GEN PURP 200V 8A D2PAK-3
Produkt ist nicht verfügbar
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NRVUB1620CTT4G murb1620ct-d.pdf
NRVUB1620CTT4G
Hersteller: onsemi
Description: DIODE GEN PURP 200V 8A D2PAK-3
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.33 EUR
10+3.9 EUR
100+3.14 EUR
Mindestbestellmenge: 5
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NRVTS8100PFST3G NRTS8100PFS-D.PDF
NRVTS8100PFST3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 8A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 660pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.51 EUR
Mindestbestellmenge: 5000
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XCY99008BR2
Hersteller: onsemi
Description: PWM CURRENT-MODE CONTROLLER
Packaging: Bulk
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1025+0.48 EUR
Mindestbestellmenge: 1025
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CS51021ED16 CHRYS00651-1.pdf?t.download=true&u=5oefqw
CS51021ED16
Hersteller: onsemi
Description: CURRENT MODE PWM CONTROLLER 1A
Packaging: Bulk
Part Status: Active
auf Bestellung 1728 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
386+1.28 EUR
Mindestbestellmenge: 386
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LV52206XA-TSD
Hersteller: onsemi
Description: SEU - MOBILE DRIVER, 33048080
Packaging: Bulk
Part Status: Active
auf Bestellung 95000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
466+0.97 EUR
Mindestbestellmenge: 466
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2SC2344E
Hersteller: onsemi
Description: POWER BIPOLAR TRANSISTOR NPN
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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LC75844MHS-MPB-E LC75844M_Rev2017.pdf
LC75844MHS-MPB-E
Hersteller: onsemi
Description: IC DRVR 88 SEGMENT 36MFPSDJ
Packaging: Tube
Package / Case: 36-SOP (0.311", 7.90mm Width)
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 88 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 6V
Supplier Device Package: 36-MFPSDJ
Part Status: Obsolete
Current - Supply: 230 µA
auf Bestellung 1523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
124+3.66 EUR
Mindestbestellmenge: 124
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MJE18002 mje18002-d.pdf
MJE18002
Hersteller: onsemi
Description: TRANS NPN 450V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 50 W
auf Bestellung 4437 Stücke:
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Anzahl Preis
841+0.54 EUR
Mindestbestellmenge: 841
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MJE18002G mje18002-d.pdf
MJE18002G
Hersteller: onsemi
Description: TRANS NPN 450V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 50 W
auf Bestellung 65841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
420+1.07 EUR
Mindestbestellmenge: 420
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SZMMBZ5226BLT1G mmbz5221blt1-d.pdf
SZMMBZ5226BLT1G
Hersteller: onsemi
Description: DIODE ZENER 3.3V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
auf Bestellung 16320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
81+0.22 EUR
150+0.12 EUR
500+0.092 EUR
1000+0.064 EUR
Mindestbestellmenge: 56
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MC10H115FNR2G design-resources?notFound=MC10H115-D.PDF
MC10H115FNR2G
Hersteller: onsemi
Description: IC RECEIVER 0/4 20PLCC
auf Bestellung 5737 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
128+4.05 EUR
Mindestbestellmenge: 128
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MC10H115FNR2 MC10H115-D.PDF
MC10H115FNR2
Hersteller: onsemi
Description: IC RECEIVER 0/4 20PLCC
auf Bestellung 4217 Stücke:
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Anzahl Preis
128+4.05 EUR
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SB0030-04A-AT1
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 30MA
Packaging: Bulk
Part Status: Active
auf Bestellung 705000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6662+0.082 EUR
Mindestbestellmenge: 6662
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