| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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2SC4710LS | onsemi |
Description: 2SC4710LS - POWER BIPOLAR TRANSI Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| 2SK3495 | onsemi |
Description: N-CHANNEL SMALL SIGNAL MOSFETPart Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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P6SMB47AT3G | onsemi |
Description: TVS DIODE 40.2VWM 64.8VC SMBPackaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 425pF @ 1MHz Current - Peak Pulse (10/1000µs): 9.3A Voltage - Reverse Standoff (Typ): 40.2V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.7V Voltage - Clamping (Max) @ Ipp: 64.8V Power - Peak Pulse: 600W Power Line Protection: No |
auf Bestellung 9399 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS5C628NT1G | onsemi |
Description: MOSFET N-CH 60V 28A/150A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 135µA Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP337FCT2G | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSPPart Status: Active Supplier Device Package: 6-WLCSP (1.0x1.5) Ratio - Input:Output: 1:1 Current - Output (Max): 3A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.2V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 20Ohm Output Configuration: High Side Operating Temperature: -40°C ~ 125°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 6-UFBGA, WLCSP Features: Load Discharge, Slew Rate Controlled Packaging: Bulk |
auf Bestellung 13358 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP367OPMUEOTBG | onsemi |
Description: IC VOLT PROTECTION OCP OVP 8DFNCurrent - Supply: 42 µA Part Status: Active Supplier Device Package: 8-DFN (2x2.2) Applications: Overvoltage Protection Controller, Current Limit Voltage - Supply: 1.2V ~ 28V Operating Temperature: -40°C ~ 85°C Voltage - Input: 1.2V ~ 28V Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Packaging: Bulk |
auf Bestellung 11000 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMF5821 | onsemi |
Description: 2MHZ SMART POWER STAGE (SPS)Part Status: Active Load Type: Inductive Fault Protection: Over Temperature, UVLO Supplier Device Package: 31-PQFN (5x5) Voltage - Load: 4.5V ~ 16V Technology: UMOS Current - Output / Channel: 60A Applications: Synchronous Buck Converters Rds On (Typ): 470mOhm LS, 680mOhm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 31-PowerWFQFN Features: Bootstrap Circuit, Latch Function, Status Flag Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| FDD3860-G | onsemi | Description: 100V N-CHANNEL POWERTRENCH MOSFE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NVMTS1D2N08H | onsemi |
Description: MOSFET N-CH 80V 43.5A/337A 8DFNWPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: 8-DFNW (8.3x8.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMTS1D2N08H | onsemi |
Description: MOSFET N-CH 80V 43.5A/337A 8DFNWPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V Power Dissipation (Max): 5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 590µA Supplier Device Package: 8-DFNW (8.3x8.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 3841 Stücke: Lieferzeit 10-14 Tag (e) |
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FDWS9508L_F085 | onsemi |
Description: MOSFET P-CH 40V 80A 8PQFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SE81NLV74HC14ADTR2G | onsemi |
Description: 74HC14 - HEX SCHMITT-TRIGGER INV Current - Quiescent (Max): 1 µA Number of Circuits: 6 Part Status: Obsolete Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Input Logic Level - Low: 0.9V ~ 2.6V Input Logic Level - High: 1.5V ~ 4.2V Supplier Device Package: 14-TSSOP Number of Inputs: 1 Current - Output High, Low: 5.2mA, 5.2mA Voltage - Supply: 2V ~ 6V Operating Temperature: -55°C ~ 125°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Features: Schmitt Trigger Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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N57M5114WD50TG | onsemi |
Description: IC DGTL POT 50KOHM 32TAP 8SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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N57M5114WD10TG | onsemi |
Description: IC DGTL POT 10KOHM 32TAP 8SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NXH50C120L2C2ESG | onsemi |
Description: IGBT MOD 1200V 50A 20MW 26-DIPInput Capacitance (Cies) @ Vce: 11.897 nF @ 20 V Current - Collector Cutoff (Max): 250 µA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Supplier Device Package: 26-DIP NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter with Brake Input: Three Phase Bridge Rectifier Mounting Type: Through Hole Package / Case: 26-PowerDIP Module (1.199", 47.20mm) Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| L5431-AA-E | onsemi | Description: L5431-AA-E |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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DVK-SFUS-API-1-GEVK | onsemi |
Description: EVAL BOARD SIGFOX AX-SFUS-APIUtilized IC / Part: AX-SFUS-API Contents: Board(s), Cable(s), Accessories Type: Transceiver Frequency: 900MHz Packaging: Bulk |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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DVK-SFEU-API-1-GEVK | onsemi |
Description: EVAL BOARD SIGFOX AX-SFEU-API |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS3512 | onsemi |
Description: MOSFET N-CH 80V 4A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V |
auf Bestellung 3894 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74VHC1G14DBVT1G | onsemi |
Description: IC INVERT SCHMITT 1CH 1INP SC74APackaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: SC-74A Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74VHC1G14DBVT1G | onsemi |
Description: IC INVERT SCHMITT 1CH 1INP SC74APackaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: SC-74A Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74VHC1G14MU2TCG | onsemi |
Description: IC INVERT SCHMITT 1CH 1INP 6UDFNPackaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 6-UDFN (1.2x1) Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 1.5V ~ 2.9V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SLJ74VHC1G14DFT2G | onsemi |
Description: IC REG LINEAR Packaging: Bulk Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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RB751S40P2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 30MA SOD923Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8 ns Technology: Schottky Capacitance @ Vr, F: 2pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-923 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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LB1960M-TLM-H | onsemi |
Description: OPTICAL SENSOR AMBIENT 540NM I2C Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FW297-TL-2W | onsemi |
Description: MOSFET 2N-CH 60V 4.5A 8SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FW297-TL-2W | onsemi |
Description: MOSFET 2N-CH 60V 4.5A 8SOIC |
auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EFC4615R-TR | onsemi |
Description: MOSFET N-CH 24V 6A EFCPPackaging: Tape & Reel (TR) Package / Case: 4-XFBGA, FCBGA Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: EFCP1515-4CC-037 Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CAS25160LI-G-DF | onsemi |
Description: CAS25160 - 16KB SPI SER CMOS EEP DigiKey Programmable: Not Verified Part Status: Active Packaging: Bulk |
auf Bestellung 188900 Stücke: Lieferzeit 10-14 Tag (e) |
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| SVC251SPA-AC | onsemi |
Description: VARIABLE-CAPACITANCE DIODEPackaging: Bulk Supplier Device Package: 2-SPA Capacitance Ratio Condition: C1.6/C5 Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz Capacitance Ratio: 1.7 Voltage - Peak Reverse (Max): 12 V Operating Temperature: 100°C (TJ) Diode Type: Single Mounting Type: Through Hole Package / Case: 2-SIP |
auf Bestellung 233571 Stücke: Lieferzeit 10-14 Tag (e) |
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| SVC233-TB-E-ON | onsemi |
Description: VARIABLE-CAPACITANCE DIODE (IOCA Packaging: Bulk |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MM74HCT573MTCX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOPPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 7.2mA, 7.2mA Delay Time - Propagation: 17ns Supplier Device Package: 20-TSSOP Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MM74HCT573MTCX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOPPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 7.2mA, 7.2mA Delay Time - Propagation: 17ns Supplier Device Package: 20-TSSOP Part Status: Active |
auf Bestellung 4522 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDT3612-SN00151 | onsemi | Description: MOSFET N-CH 100V SOT223 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| LV8081GQ-TE-L-E | onsemi |
Description: TWO CHANNELS CONSTANT-CURRENT H- Packaging: Bulk Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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LV56081GP-TE-L-E | onsemi |
Description: IC REG CHG PUMP -5.5V DL 24VCT Packaging: Bulk Package / Case: 24-WFQFN Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 2 Function: Ratiometric Current - Output: 20mA Operating Temperature: -20°C ~ 80°C Output Configuration: Positive and Negative Frequency - Switching: 2MHz Voltage - Input (Max): 3.45V Topology: Charge Pump Supplier Device Package: 24-VCT (3.5x3.5) Synchronous Rectifier: Yes Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): -5.5V, 15V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5302G | onsemi |
Description: TRANS NPN 60V 30A TO204Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Bulk Power - Max: 200 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 30 A Part Status: Obsolete Supplier Device Package: TO-204 (TO-3) Frequency - Transition: 2MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V Current - Collector Cutoff (Max): 5mA Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A |
auf Bestellung 1330 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5237ET1G | onsemi |
Description: DIODE ZENER 8.2V 500MW SOD123 |
auf Bestellung 10263 Stücke: Lieferzeit 10-14 Tag (e) |
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| SZMMSZ5245CT1G | onsemi | Description: ZENER DIODE 500 MW SOD-123 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NVBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE N-CHANNELQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 479µA Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE N-CHANNELQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 479µA Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 565 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNEInput Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 479µA Power Dissipation (Max): 3.5W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBLS1D7N08H | onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNEFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 479µA Power Dissipation (Max): 3.5W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc) |
auf Bestellung 5930 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBLS1D1N08H | onsemi |
Description: MOSFET N-CH 80V 41A/351A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBLS1D1N08H | onsemi |
Description: MOSFET N-CH 80V 41A/351A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 6874 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBLS1D5N08MC | onsemi |
Description: MOSFET N-CH 80V 32A/298A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 710µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NTBLS1D5N08MC | onsemi |
Description: MOSFET N-CH 80V 32A/298A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc) Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V Power Dissipation (Max): 2.9W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 710µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V |
auf Bestellung 1385 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86062-F085 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOFInput Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86062-F085 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOFInput Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 3796 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0200N100 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOFInput Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0200N100 | onsemi |
Description: MOSFET N-CH 100V 300A 8HPSOFInput Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 429W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
auf Bestellung 4068 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86063-F085 | onsemi |
Description: MOSFET N-CH 100V 240A 8HPSOFPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDBL86063-F085 | onsemi |
Description: MOSFET N-CH 100V 240A 8HPSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 778 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBL095N65S3H | onsemi |
Description: SUPERFET3 FAST 95MOHM TOLLInput Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-HPSOF Vgs(th) (Max) @ Id: 4V @ 2.8mA Power Dissipation (Max): 208W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP4304AMNTWG | onsemi |
Description: IC SEC SIDE SYNC RECT DRV 8DFNDigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: 8-DFN (4x4) Applications: Secondary-Side Controller Voltage - Supply: 9.5V ~ 30V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP2817BFCCT2G | onsemi |
Description: IC AMP AB STEREO 42MW 12FLIPCHIPPackaging: Cut Tape (CT) Features: Depop Package / Case: 12-UFBGA, FCBGA Output Type: 2-Channel (Stereo) Mounting Type: Surface Mount Type: Class AB Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm Supplier Device Package: 12-FlipChip (1.62x1.22) Part Status: Not For New Designs |
auf Bestellung 2924 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H175FN | onsemi |
Description: IC DTYPE LATCH QUINT 20PLCC |
auf Bestellung 2530 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H130FNG | onsemi |
Description: IC S-R LATCH DUAL 20PLCC |
auf Bestellung 3063 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H130FNR2 | onsemi |
Description: IC S-R LATCH DUAL 20PLCC |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC10H175FNR2 | onsemi |
Description: IC DTYPE LATCH QUINT 20PLCC |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SK3495 |
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Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| P6SMB47AT3G |
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Hersteller: onsemi
Description: TVS DIODE 40.2VWM 64.8VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 425pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 40.2VWM 64.8VC SMB
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 425pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 600W
Power Line Protection: No
auf Bestellung 9399 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 826+ | 0.67 EUR |
| NTMFS5C628NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 135µA
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 28A/150A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 135µA
Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP337FCT2G |
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Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Part Status: Active
Supplier Device Package: 6-WLCSP (1.0x1.5)
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 20Ohm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Bulk
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Part Status: Active
Supplier Device Package: 6-WLCSP (1.0x1.5)
Ratio - Input:Output: 1:1
Current - Output (Max): 3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 20Ohm
Output Configuration: High Side
Operating Temperature: -40°C ~ 125°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Bulk
auf Bestellung 13358 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 858+ | 0.69 EUR |
| NCP367OPMUEOTBG |
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Hersteller: onsemi
Description: IC VOLT PROTECTION OCP OVP 8DFN
Current - Supply: 42 µA
Part Status: Active
Supplier Device Package: 8-DFN (2x2.2)
Applications: Overvoltage Protection Controller, Current Limit
Voltage - Supply: 1.2V ~ 28V
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 1.2V ~ 28V
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Packaging: Bulk
Description: IC VOLT PROTECTION OCP OVP 8DFN
Current - Supply: 42 µA
Part Status: Active
Supplier Device Package: 8-DFN (2x2.2)
Applications: Overvoltage Protection Controller, Current Limit
Voltage - Supply: 1.2V ~ 28V
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 1.2V ~ 28V
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Packaging: Bulk
auf Bestellung 11000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 814+ | 0.73 EUR |
| FDMF5821 |
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Hersteller: onsemi
Description: 2MHZ SMART POWER STAGE (SPS)
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 16V
Technology: UMOS
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 470mOhm LS, 680mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Tape & Reel (TR)
Description: 2MHZ SMART POWER STAGE (SPS)
Part Status: Active
Load Type: Inductive
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 4.5V ~ 16V
Technology: UMOS
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 470mOhm LS, 680mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit, Latch Function, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD3860-G |
Hersteller: onsemi
Description: 100V N-CHANNEL POWERTRENCH MOSFE
Description: 100V N-CHANNEL POWERTRENCH MOSFE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMTS1D2N08H |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.2 EUR |
| NVMTS1D2N08H |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 43.5A/337A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Ta), 337A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3841 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.67 EUR |
| 10+ | 8.56 EUR |
| 100+ | 6.37 EUR |
| FDWS9508L_F085 |
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Hersteller: onsemi
Description: MOSFET P-CH 40V 80A 8PQFN
Description: MOSFET P-CH 40V 80A 8PQFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SE81NLV74HC14ADTR2G |
Hersteller: onsemi
Description: 74HC14 - HEX SCHMITT-TRIGGER INV
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Input Logic Level - Low: 0.9V ~ 2.6V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Features: Schmitt Trigger
Packaging: Bulk
Description: 74HC14 - HEX SCHMITT-TRIGGER INV
Current - Quiescent (Max): 1 µA
Number of Circuits: 6
Part Status: Obsolete
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Input Logic Level - Low: 0.9V ~ 2.6V
Input Logic Level - High: 1.5V ~ 4.2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage - Supply: 2V ~ 6V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Features: Schmitt Trigger
Packaging: Bulk
Produkt ist nicht verfügbar
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| N57M5114WD50TG |
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Hersteller: onsemi
Description: IC DGTL POT 50KOHM 32TAP 8SOIC
Description: IC DGTL POT 50KOHM 32TAP 8SOIC
Produkt ist nicht verfügbar
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| N57M5114WD10TG |
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Hersteller: onsemi
Description: IC DGTL POT 10KOHM 32TAP 8SOIC
Description: IC DGTL POT 10KOHM 32TAP 8SOIC
Produkt ist nicht verfügbar
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| NXH50C120L2C2ESG |
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Hersteller: onsemi
Description: IGBT MOD 1200V 50A 20MW 26-DIP
Input Capacitance (Cies) @ Vce: 11.897 nF @ 20 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Supplier Device Package: 26-DIP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Through Hole
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Packaging: Tube
Description: IGBT MOD 1200V 50A 20MW 26-DIP
Input Capacitance (Cies) @ Vce: 11.897 nF @ 20 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Supplier Device Package: 26-DIP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter with Brake
Input: Three Phase Bridge Rectifier
Mounting Type: Through Hole
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
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| L5431-AA-E |
Hersteller: onsemi
Description: L5431-AA-E
Description: L5431-AA-E
Produkt ist nicht verfügbar
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| DVK-SFUS-API-1-GEVK |
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Hersteller: onsemi
Description: EVAL BOARD SIGFOX AX-SFUS-API
Utilized IC / Part: AX-SFUS-API
Contents: Board(s), Cable(s), Accessories
Type: Transceiver
Frequency: 900MHz
Packaging: Bulk
Description: EVAL BOARD SIGFOX AX-SFUS-API
Utilized IC / Part: AX-SFUS-API
Contents: Board(s), Cable(s), Accessories
Type: Transceiver
Frequency: 900MHz
Packaging: Bulk
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 730.78 EUR |
| DVK-SFEU-API-1-GEVK |
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Hersteller: onsemi
Description: EVAL BOARD SIGFOX AX-SFEU-API
Description: EVAL BOARD SIGFOX AX-SFEU-API
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 567.17 EUR |
| FDS3512 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
Description: MOSFET N-CH 80V 4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 40 V
auf Bestellung 3894 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.07 EUR |
| 10+ | 3.47 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.08 EUR |
| 1000+ | 1.96 EUR |
| MC74VHC1G14DBVT1G |
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Hersteller: onsemi
Description: IC INVERT SCHMITT 1CH 1INP SC74A
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-74A
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1INP SC74A
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-74A
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.062 EUR |
| 6000+ | 0.06 EUR |
| MC74VHC1G14DBVT1G |
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Hersteller: onsemi
Description: IC INVERT SCHMITT 1CH 1INP SC74A
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-74A
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1INP SC74A
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: SC-74A
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 112+ | 0.19 EUR |
| 186+ | 0.11 EUR |
| 212+ | 0.099 EUR |
| 253+ | 0.083 EUR |
| 279+ | 0.075 EUR |
| 500+ | 0.07 EUR |
| 1000+ | 0.067 EUR |
| MC74VHC1G14MU2TCG |
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Hersteller: onsemi
Description: IC INVERT SCHMITT 1CH 1INP 6UDFN
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 6-UDFN (1.2x1)
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 1.5V ~ 2.9V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC INVERT SCHMITT 1CH 1INP 6UDFN
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 6-UDFN (1.2x1)
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 1.5V ~ 2.9V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RB751S40P2T5G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Description: DIODE SCHOTTKY 30V 30MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FW297-TL-2W |
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Hersteller: onsemi
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FW297-TL-2W |
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Hersteller: onsemi
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
Description: MOSFET 2N-CH 60V 4.5A 8SOIC
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
| EFC4615R-TR |
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Hersteller: onsemi
Description: MOSFET N-CH 24V 6A EFCP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1515-4CC-037
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Description: MOSFET N-CH 24V 6A EFCP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1515-4CC-037
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.27 EUR |
| CAS25160LI-G-DF |
Hersteller: onsemi
Description: CAS25160 - 16KB SPI SER CMOS EEP
DigiKey Programmable: Not Verified
Part Status: Active
Packaging: Bulk
Description: CAS25160 - 16KB SPI SER CMOS EEP
DigiKey Programmable: Not Verified
Part Status: Active
Packaging: Bulk
auf Bestellung 188900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 666+ | 0.88 EUR |
| SVC251SPA-AC |
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Hersteller: onsemi
Description: VARIABLE-CAPACITANCE DIODE
Packaging: Bulk
Supplier Device Package: 2-SPA
Capacitance Ratio Condition: C1.6/C5
Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz
Capacitance Ratio: 1.7
Voltage - Peak Reverse (Max): 12 V
Operating Temperature: 100°C (TJ)
Diode Type: Single
Mounting Type: Through Hole
Package / Case: 2-SIP
Description: VARIABLE-CAPACITANCE DIODE
Packaging: Bulk
Supplier Device Package: 2-SPA
Capacitance Ratio Condition: C1.6/C5
Capacitance @ Vr, F: 38pF @ 1.6V, 1MHz
Capacitance Ratio: 1.7
Voltage - Peak Reverse (Max): 12 V
Operating Temperature: 100°C (TJ)
Diode Type: Single
Mounting Type: Through Hole
Package / Case: 2-SIP
auf Bestellung 233571 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2959+ | 0.19 EUR |
| SVC233-TB-E-ON |
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 466+ | 1.14 EUR |
| MM74HCT573MTCX |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.5 EUR |
| MM74HCT573MTCX |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 7.2mA, 7.2mA
Delay Time - Propagation: 17ns
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 4522 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.11 EUR |
| 27+ | 0.79 EUR |
| 30+ | 0.7 EUR |
| 100+ | 0.62 EUR |
| 250+ | 0.57 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.54 EUR |
| FDT3612-SN00151 |
Hersteller: onsemi
Description: MOSFET N-CH 100V SOT223
Description: MOSFET N-CH 100V SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LV8081GQ-TE-L-E |
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 902+ | 0.69 EUR |
| LV56081GP-TE-L-E |
Hersteller: onsemi
Description: IC REG CHG PUMP -5.5V DL 24VCT
Packaging: Bulk
Package / Case: 24-WFQFN
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Ratiometric
Current - Output: 20mA
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive and Negative
Frequency - Switching: 2MHz
Voltage - Input (Max): 3.45V
Topology: Charge Pump
Supplier Device Package: 24-VCT (3.5x3.5)
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): -5.5V, 15V
Description: IC REG CHG PUMP -5.5V DL 24VCT
Packaging: Bulk
Package / Case: 24-WFQFN
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Ratiometric
Current - Output: 20mA
Operating Temperature: -20°C ~ 80°C
Output Configuration: Positive and Negative
Frequency - Switching: 2MHz
Voltage - Input (Max): 3.45V
Topology: Charge Pump
Supplier Device Package: 24-VCT (3.5x3.5)
Synchronous Rectifier: Yes
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): -5.5V, 15V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 118+ | 5 EUR |
| 2N5302G |
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Hersteller: onsemi
Description: TRANS NPN 60V 30A TO204
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Current - Collector Cutoff (Max): 5mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
Description: TRANS NPN 60V 30A TO204
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 2V
Current - Collector Cutoff (Max): 5mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 6A, 30A
auf Bestellung 1330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 9.01 EUR |
| MMSZ5237ET1G |
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Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW SOD123
Description: DIODE ZENER 8.2V 500MW SOD123
auf Bestellung 10263 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4199+ | 0.13 EUR |
| SZMMSZ5245CT1G |
Hersteller: onsemi
Description: ZENER DIODE 500 MW SOD-123
Description: ZENER DIODE 500 MW SOD-123
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVBLS1D7N08H |
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Hersteller: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET - POWER, SINGLE N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVBLS1D7N08H |
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Hersteller: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET - POWER, SINGLE N-CHANNEL
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 4.4W (Ta), 237.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 241.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.73 EUR |
| 10+ | 7.87 EUR |
| 100+ | 5.66 EUR |
| 500+ | 5.22 EUR |
| NTBLS1D7N08H |
![]() |
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET - POWER, SINGLE, N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 4.83 EUR |
| NTBLS1D7N08H |
![]() |
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
Description: MOSFET - POWER, SINGLE, N-CHANNE
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7675 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 479µA
Power Dissipation (Max): 3.5W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 203A (Tc)
auf Bestellung 5930 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.92 EUR |
| 10+ | 8.33 EUR |
| 100+ | 6.75 EUR |
| 500+ | 6 EUR |
| 1000+ | 5.13 EUR |
| NVBLS1D1N08H |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 6.81 EUR |
| NVBLS1D1N08H |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6874 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.43 EUR |
| 10+ | 10.54 EUR |
| 100+ | 8.33 EUR |
| NTBLS1D5N08MC |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTBLS1D5N08MC |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
Description: MOSFET N-CH 80V 32A/298A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 298A (Tc)
Rds On (Max) @ Id, Vgs: 1.53mOhm @ 80A, 10V
Power Dissipation (Max): 2.9W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 710µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8170 pF @ 40 V
auf Bestellung 1385 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.97 EUR |
| 10+ | 12.3 EUR |
| 100+ | 9.19 EUR |
| FDBL86062-F085 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 6.95 EUR |
| FDBL86062-F085 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 3796 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.07 EUR |
| 10+ | 11.2 EUR |
| 100+ | 9.34 EUR |
| 500+ | 8.23 EUR |
| 1000+ | 7.41 EUR |
| FDBL0200N100 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 6.96 EUR |
| FDBL0200N100 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 300A 8HPSOF
Input Capacitance (Ciss) (Max) @ Vds: 9760 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 429W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 4068 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.27 EUR |
| 10+ | 9.48 EUR |
| 100+ | 8.52 EUR |
| FDBL86063-F085 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDBL86063-F085 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 778 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.08 EUR |
| 10+ | 10.25 EUR |
| 100+ | 7.51 EUR |
| 500+ | 7.37 EUR |
| NTBL095N65S3H |
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Hersteller: onsemi
Description: SUPERFET3 FAST 95MOHM TOLL
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Description: SUPERFET3 FAST 95MOHM TOLL
Input Capacitance (Ciss) (Max) @ Vds: 2833 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-HPSOF
Vgs(th) (Max) @ Id: 4V @ 2.8mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCP4304AMNTWG |
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Hersteller: onsemi
Description: IC SEC SIDE SYNC RECT DRV 8DFN
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 8-DFN (4x4)
Applications: Secondary-Side Controller
Voltage - Supply: 9.5V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC SEC SIDE SYNC RECT DRV 8DFN
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: 8-DFN (4x4)
Applications: Secondary-Side Controller
Voltage - Supply: 9.5V ~ 30V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.12 EUR |
| 10+ | 2.8 EUR |
| 25+ | 2.64 EUR |
| 100+ | 2.25 EUR |
| 250+ | 2.11 EUR |
| 500+ | 1.84 EUR |
| NCP2817BFCCT2G |
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Hersteller: onsemi
Description: IC AMP AB STEREO 42MW 12FLIPCHIP
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 12-UFBGA, FCBGA
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm
Supplier Device Package: 12-FlipChip (1.62x1.22)
Part Status: Not For New Designs
Description: IC AMP AB STEREO 42MW 12FLIPCHIP
Packaging: Cut Tape (CT)
Features: Depop
Package / Case: 12-UFBGA, FCBGA
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Max Output Power x Channels @ Load: 42mW x 2 @ 16Ohm
Supplier Device Package: 12-FlipChip (1.62x1.22)
Part Status: Not For New Designs
auf Bestellung 2924 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.4 EUR |
| 21+ | 1.01 EUR |
| 25+ | 0.9 EUR |
| 100+ | 0.8 EUR |
| 250+ | 0.74 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.69 EUR |
| MC10H175FN |
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Hersteller: onsemi
Description: IC DTYPE LATCH QUINT 20PLCC
Description: IC DTYPE LATCH QUINT 20PLCC
auf Bestellung 2530 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 104+ | 5.51 EUR |
| MC10H130FNG |
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Hersteller: onsemi
Description: IC S-R LATCH DUAL 20PLCC
Description: IC S-R LATCH DUAL 20PLCC
auf Bestellung 3063 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 7.44 EUR |
| MC10H130FNR2 |
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Hersteller: onsemi
Description: IC S-R LATCH DUAL 20PLCC
Description: IC S-R LATCH DUAL 20PLCC
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 7.44 EUR |
| MC10H175FNR2 |
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Hersteller: onsemi
Description: IC DTYPE LATCH QUINT 20PLCC
Description: IC DTYPE LATCH QUINT 20PLCC
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 104+ | 5.51 EUR |


























