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NSV40300MZ4T1G NSV40300MZ4T1G onsemi nss40300mz4-d.pdf Description: TRANS PNP 40V 3A SOT223
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NSV40300MZ4T1G NSV40300MZ4T1G onsemi nss40300mz4-d.pdf Description: TRANS PNP 40V 3A SOT223
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2SB1468R 2SB1468R onsemi SNYOS08776-1.pdf?t.download=true&u=5oefqw Description: PNP SILICON TRANSISTOR
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 12 A
Supplier Device Package: TO-220ML
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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LC824100-09F-TBM-GBE onsemi Description: LC824100-09F-TBM-GBE
Produkt ist nicht verfügbar
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NCP1280DR2G NCP1280DR2G onsemi ncp1280-d.pdf Description: IC OFFLINE SW MULT TOP 16SOIC
Control Features: Frequency Control, Soft Start
Voltage - Start Up: 11 V
Fault Protection: Current Limiting, Over Voltage
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Topology: Forward, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): No
Frequency - Switching: 150kHz ~ 300kHz
Duty Cycle: 62%, 80%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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SMSZ1600-25T3DS SMSZ1600-25T3DS onsemi Description: DIODE ZENER 0.5W SPCL SOD123
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NCP154MX330300TAG NCP154MX330300TAG onsemi ncp154-d.pdf Description: IC REG LINEAR 3V/3.3V 8XDFN
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NCP154MX180300TAG NCP154MX180300TAG onsemi ncp154-d.pdf Description: IC REG LINEAR 1.8V/3V 8XDFN
Current - Supply (Max): 200 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.39V @ 300mA, 0.26V @ 300mA
PSRR: 75dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V, 3V
Supplier Device Package: 8-XDFN (1.6x1.2)
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA, 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-XFDFN Exposed Pad
Packaging: Bulk
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NSV40300CTWG onsemi nss40300ct-d.pdf Description: PNP LFPAK4 BIP POWER TRAN
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74AC10PC 74AC10PC onsemi 74AC10%2C74ACT10.pdf Description: IC GATE NAND 3CH 3-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74AC10SJ 74AC10SJ onsemi 74AC10%2C74ACT10.pdf Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74AC10MTCX 74AC10MTCX onsemi 74AC10%2C74ACT10.pdf Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74AC10SC 74AC10SC onsemi 74AC10%2C74ACT10.pdf description Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74AC10SCX 74AC10SCX onsemi 74AC10%2C74ACT10.pdf Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
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74AC10SJX 74AC10SJX onsemi 74AC10%2C74ACT10.pdf Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TN5D51A-R-HCC11-E onsemi Description: IC REG BUCK 12V 5A TO220F5I5H-HB
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -10°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
Produkt ist nicht verfügbar
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TN8D51A-HB11-E TN8D51A-HB11-E onsemi TN8D51A.pdf Description: IC REG BUCK 12V 8A TO220F5I5H-HB
Function: Step-Down
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Full Pack, Formed Leads
Packaging: Bulk
Voltage - Output (Min/Fixed): 12V
Voltage - Input (Min): 20V
Synchronous Rectifier: No
Supplier Device Package: TO-220F5I5H-HB
Topology: Buck
Voltage - Input (Max): 48V
Frequency - Switching: 150kHz
Output Configuration: Positive
Operating Temperature: -10°C ~ 85°C (TA)
Current - Output: 8A
Produkt ist nicht verfügbar
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TN8D41A-HB11-E TN8D41A-HB11-E onsemi TN8D41A.pdf Description: IC REG BUCK 5V 8A TO220FL
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TY40470R2 onsemi Description: IC SUPERVISOR ANA UNDERVOLT DET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NSS20500UW3TBG NSS20500UW3TBG onsemi nss20500uw3-d.pdf Description: TRANS PNP 20V 5A 3WDFN
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
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NSS20500UW3TBG NSS20500UW3TBG onsemi nss20500uw3-d.pdf Description: TRANS PNP 20V 5A 3WDFN
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Cut Tape (CT)
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2SK4065-DL-1EX 2SK4065-DL-1EX onsemi 2SK4065-D.PDF Description: 2SK4065 - MOSFET N-CHANNEL 75V T
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Part Status: Active
Supplier Device Package: TO-263-2
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
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2SK4084LS 2SK4084LS onsemi snyos15145-1 Description: 2SK4084LS - MOSFET, T14A, 500V,
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Part Status: Active
Supplier Device Package: TO-220FI(LS)
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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2SK443-6-TB-E-ON onsemi Description: PNP/NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
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2SK4067-N-TL-E onsemi 2SK4067-N-TL-E.pdf?t.download=true&u=axiww2 Description: NCH 4V DRIVE SERIES
Part Status: Active
Packaging: Bulk
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2SK436-19-TB-E onsemi Description: NCH T-FET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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SI9936DY SI9936DY onsemi DS_261_SI9936DY.pdf description Description: MOSFET 2N-CH 30V 5A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTH4L067N65S3H NTH4L067N65S3H onsemi nth4l067n65s3h-d.pdf Description: SUPERFET3 FAST 67MOHM TO-247-4
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Power Dissipation (Max): 266W (Tc)
Produkt ist nicht verfügbar
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SZNSQA6V8AW5T2G SZNSQA6V8AW5T2G onsemi nsqa6v8aw5t2-d.pdf Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SZNSQA6V8AW5T2G SZNSQA6V8AW5T2G onsemi nsqa6v8aw5t2-d.pdf Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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500+0.29 EUR
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NTMFD0D9N02P1E onsemi Description: IFET 25V 0.9 MOHM PQFN56MP
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
Drain to Source Voltage (Vdss): 30V, 25V
Power - Max: 960mW (Ta), 1.04W (Ta)
Technology: MOSFET (Metal Oxide)
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FDMS86263P-23507X onsemi Description: FET -150V 53.0 MOHM PQFN56
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar
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2SA1770S-AN 2SA1770S-AN onsemi 2SA1770,2SC4614.pdf Description: TRANS PNP 160V 1.5A 3NMP
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: 3-NMP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CNY173SVM CNY173SVM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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CNY173SVM CNY173SVM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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CAV25512YE-GT3 CAV25512YE-GT3 onsemi cav25512-d.pdf Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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CAV25512YE-GT3 CAV25512YE-GT3 onsemi cav25512-d.pdf Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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NDUL03N150CG NDUL03N150CG onsemi ena2218-d.pdf Description: MOSFET N-CH 1500V 2.5A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P(L)
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Packaging: Tube
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SB01-05C-TB-E SB01-05C-TB-E onsemi sb01-05c-d.pdf Description: DIODE SCHOTTKY 50V 100MA 3CP
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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SB01-05C-TB-E SB01-05C-TB-E onsemi sb01-05c-d.pdf Description: DIODE SCHOTTKY 50V 100MA 3CP
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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NSVDTC123JET1G NSVDTC123JET1G onsemi dtc123j-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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NSVDTC123JET1G NSVDTC123JET1G onsemi dtc123j-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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FW261-TL-E FW261-TL-E onsemi Description: NCH+NCH 4V DRIVE SERIES
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MCH6661-TL-W MCH6661-TL-W onsemi ena2280-d.pdf Description: MOSFET 2N-CH 30V 1.8A SOT363
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MC100LVEP210FAG MC100LVEP210FAG onsemi mc100lvep210-d.pdf Description: IC CLK BUFFER 1:5 3GHZ 32LQFP
Frequency - Max: 3 GHz
Part Status: Active
Supplier Device Package: 32-LQFP (7x7)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:5
Voltage - Supply: 2.375V ~ 3.8V
Operating Temperature: -40°C ~ 85°C
Input: ECL, HSTL, LVDS, PECL
Type: Fanout Buffer (Distribution)
Output: ECL, PECL
Mounting Type: Surface Mount
Number of Circuits: 2
Package / Case: 32-LQFP
Packaging: Bulk
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FQU1N80TU FQU1N80TU onsemi fqu1n80-d.pdf Description: MOSFET N-CH 800V 1A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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MMBT5401-D87Z MMBT5401-D87Z onsemi MMBT5401_Rev2014.pdf Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
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NCV97311MW50AR2G NCV97311MW50AR2G onsemi ncv97311a-d.pdf Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Number of Outputs: 4
Part Status: Active
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 1: 5V, 3A
Supplier Device Package: 32-QFNW (5x5)
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Frequency - Switching: 2MHz ~ 2.6MHz
Voltage - Supply: 4.1V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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NCV97311MW50AR2G NCV97311MW50AR2G onsemi ncv97311a-d.pdf Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Outputs: 4
Part Status: Active
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 1: 5V, 3A
Supplier Device Package: 32-QFNW (5x5)
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Frequency - Switching: 2MHz ~ 2.6MHz
Voltage - Supply: 4.1V ~ 18V
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SURS8205T3G-VF01 SURS8205T3G-VF01 onsemi MURS205T3-D.PDF Description: DIODE GEN PURP 50V 2A SMB
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NVD5863NLT4G NVD5863NLT4G onsemi nvd5863nl-d.pdf Description: MOSFET N-CH 60V 14.9A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NVD5863NLT4G NVD5863NLT4G onsemi nvd5863nl-d.pdf Description: MOSFET N-CH 60V 14.9A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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NVD5806NT4G NVD5806NT4G onsemi ntd5806n-d.pdf Description: MOSFET N-CH 40V 33A DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
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NVD5807NT4G NVD5807NT4G onsemi ntd5807n-d.pdf Description: MOSFET N-CH 40V 23A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NVD5807NT4G NVD5807NT4G onsemi ntd5807n-d.pdf Description: MOSFET N-CH 40V 23A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SVD5865NLT4G SVD5865NLT4G onsemi Description: MOSFET N-CH 60V 10A/46A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NVD5802NT4G-TB01 NVD5802NT4G-TB01 onsemi ntd5802n-d.pdf Description: MOSFET N-CH 40V 16.4A/101A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SVD5806NT4G SVD5806NT4G onsemi Description: MOSFET N-CH 40V 33A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NVD5863NLT4G-VF01 NVD5863NLT4G-VF01 onsemi Description: MOSFET N-CH 60V 14.9A/82A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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NVD5802NT4G-VF01 NVD5802NT4G-VF01 onsemi ntd5802n-d.pdf Description: MOSFET N-CH 40V 16.4A/101A DPAK
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Produkt ist nicht verfügbar
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NSV40300MZ4T1G nss40300mz4-d.pdf
NSV40300MZ4T1G
Hersteller: onsemi
Description: TRANS PNP 40V 3A SOT223
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.41 EUR
2000+0.38 EUR
5000+0.35 EUR
10000+0.33 EUR
Mindestbestellmenge: 1000
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NSV40300MZ4T1G nss40300mz4-d.pdf
NSV40300MZ4T1G
Hersteller: onsemi
Description: TRANS PNP 40V 3A SOT223
auf Bestellung 13000 Stücke:
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Anzahl Preis
17+1.09 EUR
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2SB1468R SNYOS08776-1.pdf?t.download=true&u=5oefqw
2SB1468R
Hersteller: onsemi
Description: PNP SILICON TRANSISTOR
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 12 A
Supplier Device Package: TO-220ML
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 250mA, 5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 948 Stücke:
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Anzahl Preis
592+0.83 EUR
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LC824100-09F-TBM-GBE
Hersteller: onsemi
Description: LC824100-09F-TBM-GBE
Produkt ist nicht verfügbar
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NCP1280DR2G ncp1280-d.pdf
NCP1280DR2G
Hersteller: onsemi
Description: IC OFFLINE SW MULT TOP 16SOIC
Control Features: Frequency Control, Soft Start
Voltage - Start Up: 11 V
Fault Protection: Current Limiting, Over Voltage
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Topology: Forward, Secondary Side SR
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): No
Frequency - Switching: 150kHz ~ 300kHz
Duty Cycle: 62%, 80%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 58243 Stücke:
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Anzahl Preis
201+2.37 EUR
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SMSZ1600-25T3DS
SMSZ1600-25T3DS
Hersteller: onsemi
Description: DIODE ZENER 0.5W SPCL SOD123
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15000+0.034 EUR
Mindestbestellmenge: 15000
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NCP154MX330300TAG ncp154-d.pdf
NCP154MX330300TAG
Hersteller: onsemi
Description: IC REG LINEAR 3V/3.3V 8XDFN
auf Bestellung 39000 Stücke:
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Anzahl Preis
1027+0.52 EUR
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NCP154MX180300TAG ncp154-d.pdf
NCP154MX180300TAG
Hersteller: onsemi
Description: IC REG LINEAR 1.8V/3V 8XDFN
Current - Supply (Max): 200 µA
Protection Features: Over Current, Over Temperature
Voltage Dropout (Max): 0.39V @ 300mA, 0.26V @ 300mA
PSRR: 75dB (1kHz)
Part Status: Obsolete
Control Features: Enable
Voltage - Output (Min/Fixed): 1.8V, 3V
Supplier Device Package: 8-XDFN (1.6x1.2)
Number of Regulators: 2
Voltage - Input (Max): 5.25V
Current - Quiescent (Iq): 100 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 300mA, 300mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-XFDFN Exposed Pad
Packaging: Bulk
auf Bestellung 32940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
944+0.52 EUR
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NSV40300CTWG nss40300ct-d.pdf
Hersteller: onsemi
Description: PNP LFPAK4 BIP POWER TRAN
Produkt ist nicht verfügbar
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74AC10PC 74AC10%2C74ACT10.pdf
74AC10PC
Hersteller: onsemi
Description: IC GATE NAND 3CH 3-INP 14MDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-MDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74AC10SJ 74AC10%2C74ACT10.pdf
74AC10SJ
Hersteller: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74AC10MTCX 74AC10%2C74ACT10.pdf
74AC10MTCX
Hersteller: onsemi
Description: IC GATE NAND 3CH 3-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74AC10SC description 74AC10%2C74ACT10.pdf
74AC10SC
Hersteller: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74AC10SCX 74AC10%2C74ACT10.pdf
74AC10SCX
Hersteller: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74AC10SJX 74AC10%2C74ACT10.pdf
74AC10SJX
Hersteller: onsemi
Description: IC GATE NAND 3CH 3-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 3
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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TN5D51A-R-HCC11-E
Hersteller: onsemi
Description: IC REG BUCK 12V 5A TO220F5I5H-HB
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 5A
Operating Temperature: -10°C ~ 85°C
Output Configuration: Positive
Frequency - Switching: 150kHz
Voltage - Input (Max): 48V
Topology: Buck
Supplier Device Package: TO-220F5I5H-HB
Synchronous Rectifier: No
Voltage - Input (Min): 20V
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
Produkt ist nicht verfügbar
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TN8D51A-HB11-E TN8D51A.pdf
TN8D51A-HB11-E
Hersteller: onsemi
Description: IC REG BUCK 12V 8A TO220F5I5H-HB
Function: Step-Down
Number of Outputs: 1
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-5 Full Pack, Formed Leads
Packaging: Bulk
Voltage - Output (Min/Fixed): 12V
Voltage - Input (Min): 20V
Synchronous Rectifier: No
Supplier Device Package: TO-220F5I5H-HB
Topology: Buck
Voltage - Input (Max): 48V
Frequency - Switching: 150kHz
Output Configuration: Positive
Operating Temperature: -10°C ~ 85°C (TA)
Current - Output: 8A
Produkt ist nicht verfügbar
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TN8D41A-HB11-E TN8D41A.pdf
TN8D41A-HB11-E
Hersteller: onsemi
Description: IC REG BUCK 5V 8A TO220FL
Produkt ist nicht verfügbar
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TY40470R2
Hersteller: onsemi
Description: IC SUPERVISOR ANA UNDERVOLT DET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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NSS20500UW3TBG nss20500uw3-d.pdf
NSS20500UW3TBG
Hersteller: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.31 EUR
Mindestbestellmenge: 3000
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NSS20500UW3TBG nss20500uw3-d.pdf
NSS20500UW3TBG
Hersteller: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
22+0.8 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
Mindestbestellmenge: 14
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2SK4065-DL-1EX 2SK4065-D.PDF
2SK4065-DL-1EX
Hersteller: onsemi
Description: 2SK4065 - MOSFET N-CHANNEL 75V T
Input Capacitance (Ciss) (Max) @ Vds: 12200 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Part Status: Active
Supplier Device Package: TO-263-2
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 3140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
124+3.92 EUR
Mindestbestellmenge: 124
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2SK4084LS snyos15145-1
2SK4084LS
Hersteller: onsemi
Description: 2SK4084LS - MOSFET, T14A, 500V,
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Part Status: Active
Supplier Device Package: TO-220FI(LS)
Power Dissipation (Max): 2W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 941 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
214+2.36 EUR
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2SK443-6-TB-E-ON
Hersteller: onsemi
Description: PNP/NPN EPITAXIAL PLANAR SILICON
Packaging: Bulk
auf Bestellung 18333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3643+0.12 EUR
Mindestbestellmenge: 3643
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2SK4067-N-TL-E 2SK4067-N-TL-E.pdf?t.download=true&u=axiww2
Hersteller: onsemi
Description: NCH 4V DRIVE SERIES
Part Status: Active
Packaging: Bulk
auf Bestellung 4900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2049+0.24 EUR
Mindestbestellmenge: 2049
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2SK436-19-TB-E
Hersteller: onsemi
Description: NCH T-FET
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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SI9936DY description DS_261_SI9936DY.pdf
SI9936DY
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 5A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 525pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTH4L067N65S3H nth4l067n65s3h-d.pdf
NTH4L067N65S3H
Hersteller: onsemi
Description: SUPERFET3 FAST 67MOHM TO-247-4
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 4V @ 3.9mA
Power Dissipation (Max): 266W (Tc)
Produkt ist nicht verfügbar
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SZNSQA6V8AW5T2G nsqa6v8aw5t2-d.pdf
SZNSQA6V8AW5T2G
Hersteller: onsemi
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SZNSQA6V8AW5T2G nsqa6v8aw5t2-d.pdf
SZNSQA6V8AW5T2G
Hersteller: onsemi
Description: TVS DIODE 5VWM 13VC SC88A
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1012 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
30+0.61 EUR
100+0.39 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 18
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NTMFD0D9N02P1E
Hersteller: onsemi
Description: IFET 25V 0.9 MOHM PQFN56MP
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2V @ 340µA, 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V, 30nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V, 720µOhm @ 41A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 15V, 5050pF @ 13V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 30A (Ta)
Drain to Source Voltage (Vdss): 30V, 25V
Power - Max: 960mW (Ta), 1.04W (Ta)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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FDMS86263P-23507X
Hersteller: onsemi
Description: FET -150V 53.0 MOHM PQFN56
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3905 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 22A (Tc)
FET Type: P-Channel
Produkt ist nicht verfügbar
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2SA1770S-AN 2SA1770,2SC4614.pdf
2SA1770S-AN
Hersteller: onsemi
Description: TRANS PNP 160V 1.5A 3NMP
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: 3-NMP
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: SC-71
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CNY173SVM cny17f4m-d.pdf
CNY173SVM
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Bulk
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 1725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
25+0.71 EUR
100+0.52 EUR
500+0.43 EUR
1000+0.4 EUR
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CNY173SVM cny17f4m-d.pdf
CNY173SVM
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 324 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
50+0.57 EUR
100+0.52 EUR
Mindestbestellmenge: 17
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CAV25512YE-GT3 cav25512-d.pdf
CAV25512YE-GT3
Hersteller: onsemi
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.2 EUR
Mindestbestellmenge: 3000
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CAV25512YE-GT3 cav25512-d.pdf
CAV25512YE-GT3
Hersteller: onsemi
Description: IC EEPROM 512KBIT SPI 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 64K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 6161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.82 EUR
25+1.77 EUR
50+1.73 EUR
100+1.69 EUR
250+1.64 EUR
500+1.6 EUR
1000+1.56 EUR
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NDUL03N150CG ena2218-d.pdf
NDUL03N150CG
Hersteller: onsemi
Description: MOSFET N-CH 1500V 2.5A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 1500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P(L)
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 10.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Packaging: Tube
Produkt ist nicht verfügbar
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SB01-05C-TB-E sb01-05c-d.pdf
SB01-05C-TB-E
Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 100MA 3CP
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SB01-05C-TB-E sb01-05c-d.pdf
SB01-05C-TB-E
Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 100MA 3CP
Current - Reverse Leakage @ Vr: 15 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 4.4pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
34+0.53 EUR
100+0.34 EUR
500+0.25 EUR
1000+0.23 EUR
Mindestbestellmenge: 20
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NSVDTC123JET1G dtc123j-d.pdf
NSVDTC123JET1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.056 EUR
Mindestbestellmenge: 3000
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NSVDTC123JET1G dtc123j-d.pdf
NSVDTC123JET1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 5948 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
104+0.17 EUR
166+0.11 EUR
500+0.077 EUR
1000+0.068 EUR
Mindestbestellmenge: 63
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FW261-TL-E
FW261-TL-E
Hersteller: onsemi
Description: NCH+NCH 4V DRIVE SERIES
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2885+0.17 EUR
Mindestbestellmenge: 2885
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MCH6661-TL-W ena2280-d.pdf
MCH6661-TL-W
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 1.8A SOT363
Produkt ist nicht verfügbar
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MC100LVEP210FAG mc100lvep210-d.pdf
MC100LVEP210FAG
Hersteller: onsemi
Description: IC CLK BUFFER 1:5 3GHZ 32LQFP
Frequency - Max: 3 GHz
Part Status: Active
Supplier Device Package: 32-LQFP (7x7)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:5
Voltage - Supply: 2.375V ~ 3.8V
Operating Temperature: -40°C ~ 85°C
Input: ECL, HSTL, LVDS, PECL
Type: Fanout Buffer (Distribution)
Output: ECL, PECL
Mounting Type: Surface Mount
Number of Circuits: 2
Package / Case: 32-LQFP
Packaging: Bulk
auf Bestellung 14492 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+24.36 EUR
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FQU1N80TU fqu1n80-d.pdf
FQU1N80TU
Hersteller: onsemi
Description: MOSFET N-CH 800V 1A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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MMBT5401-D87Z MMBT5401_Rev2014.pdf
MMBT5401-D87Z
Hersteller: onsemi
Description: TRANS PNP 150V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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NCV97311MW50AR2G ncv97311a-d.pdf
NCV97311MW50AR2G
Hersteller: onsemi
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Number of Outputs: 4
Part Status: Active
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 1: 5V, 3A
Supplier Device Package: 32-QFNW (5x5)
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Frequency - Switching: 2MHz ~ 2.6MHz
Voltage - Supply: 4.1V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+4.79 EUR
Mindestbestellmenge: 5000
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NCV97311MW50AR2G ncv97311a-d.pdf
NCV97311MW50AR2G
Hersteller: onsemi
Description: IC REG QUAD BUCK/LNR SYNC 32QFNW
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Outputs: 4
Part Status: Active
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 3: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 2: 1.2V ~ 3.3V, 1.5A
Voltage/Current - Output 1: 5V, 3A
Supplier Device Package: 32-QFNW (5x5)
Topology: Step-Down (Buck) Synchronous (2), Linear (LDO) (2)
Frequency - Switching: 2MHz ~ 2.6MHz
Voltage - Supply: 4.1V ~ 18V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.91 EUR
10+8.9 EUR
25+8.42 EUR
100+7.29 EUR
250+6.92 EUR
500+6.21 EUR
1000+5.24 EUR
2500+4.98 EUR
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SURS8205T3G-VF01 MURS205T3-D.PDF
SURS8205T3G-VF01
Hersteller: onsemi
Description: DIODE GEN PURP 50V 2A SMB
Produkt ist nicht verfügbar
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NVD5863NLT4G nvd5863nl-d.pdf
NVD5863NLT4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 14.9A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVD5863NLT4G nvd5863nl-d.pdf
NVD5863NLT4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 14.9A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NVD5806NT4G ntd5806n-d.pdf
NVD5806NT4G
Hersteller: onsemi
Description: MOSFET N-CH 40V 33A DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Produkt ist nicht verfügbar
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NVD5807NT4G ntd5807n-d.pdf
NVD5807NT4G
Hersteller: onsemi
Description: MOSFET N-CH 40V 23A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVD5807NT4G ntd5807n-d.pdf
NVD5807NT4G
Hersteller: onsemi
Description: MOSFET N-CH 40V 23A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 603 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SVD5865NLT4G
SVD5865NLT4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 10A/46A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVD5802NT4G-TB01 ntd5802n-d.pdf
NVD5802NT4G-TB01
Hersteller: onsemi
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SVD5806NT4G
SVD5806NT4G
Hersteller: onsemi
Description: MOSFET N-CH 40V 33A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Qualification: AEC-Q101
Grade: Automotive
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NVD5863NLT4G-VF01
NVD5863NLT4G-VF01
Hersteller: onsemi
Description: MOSFET N-CH 60V 14.9A/82A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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NVD5802NT4G-VF01 ntd5802n-d.pdf
NVD5802NT4G-VF01
Hersteller: onsemi
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 12 V
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