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R6015KNZC8 R6015KNZC8 Rohm Semiconductor r6015knzc17-e.pdf Description: MOSFET N-CHANNEL 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
R6020KNJTL R6020KNJTL Rohm Semiconductor datasheet?p=R6020KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Produkt ist nicht verfügbar
R6020KNX R6020KNX Rohm Semiconductor r6020knx-e.pdf Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 399 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.73 EUR
10+ 5.66 EUR
100+ 4.58 EUR
Mindestbestellmenge: 4
R6020KNZC8 R6020KNZC8 Rohm Semiconductor TO3PF_Inner_Structure.pdf Description: MOSFET N-CHANNEL 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Produkt ist nicht verfügbar
R6024KNJTL R6024KNJTL Rohm Semiconductor datasheet?p=R6024KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 600V 24A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
R6024KNX R6024KNX Rohm Semiconductor r6024knx-e.pdf Description: MOSFET N-CH 600V 24A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 291 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.58 EUR
10+ 5.47 EUR
Mindestbestellmenge: 4
R6024KNZ1C9 R6024KNZ1C9 Rohm Semiconductor datasheet?p=R6024KNZ1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
R6024KNZC8 R6024KNZC8 Rohm Semiconductor R6024KNZ Description: MOSFET N-CHANNEL 600V 24A TO3PF
Produkt ist nicht verfügbar
R6030KNX R6030KNX Rohm Semiconductor r6030knx-e.pdf Description: MOSFET N-CH 600V 30A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
3+8.87 EUR
10+ 7.43 EUR
500+ 5.35 EUR
Mindestbestellmenge: 3
R6030KNZ1C9 R6030KNZ1C9 Rohm Semiconductor R6030KNZ1 Description: MOSFET N-CHANNEL 600V 30A TO247
auf Bestellung 260 Stücke:
Lieferzeit 21-28 Tag (e)
R6030KNZC8 R6030KNZC8 Rohm Semiconductor R6030KNZ Description: MOSFET N-CHANNEL 600V 30A TO3PF
Produkt ist nicht verfügbar
R6035KNZC8 R6035KNZC8 Rohm Semiconductor R6035KNZ Description: MOSFET N-CHANNEL 600V 35A TO3PF
auf Bestellung 360 Stücke:
Lieferzeit 21-28 Tag (e)
RE1C002ZPTL RE1C002ZPTL Rohm Semiconductor datasheet?p=RE1C002ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 200MA EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
Produkt ist nicht verfügbar
RF4E100AJTCR RF4E100AJTCR Rohm Semiconductor datasheet?p=RF4E100AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.82 EUR
6000+ 0.78 EUR
Mindestbestellmenge: 3000
RF6C055BCTCR RF6C055BCTCR Rohm Semiconductor rf6c055bctcr-e.pdf Description: MOSFET P-CHANNEL 20V 5.5A TUMT6
Produkt ist nicht verfügbar
RF6E045AJTCR RF6E045AJTCR Rohm Semiconductor datasheet?p=RF6E045AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 30V 4.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.48 EUR
Mindestbestellmenge: 3000
RQ5C060BCTCL RQ5C060BCTCL Rohm Semiconductor datasheet?p=RQ5C060BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CHANNEL 20V 6A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.69 EUR
6000+ 0.66 EUR
9000+ 0.61 EUR
Mindestbestellmenge: 3000
RQ5E025ATTCL RQ5E025ATTCL Rohm Semiconductor datasheet?p=RQ5E025AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.32 EUR
6000+ 0.31 EUR
9000+ 0.27 EUR
Mindestbestellmenge: 3000
RQ5E030AJTCL RQ5E030AJTCL Rohm Semiconductor datasheet?p=RQ5E030AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.36 EUR
6000+ 0.34 EUR
9000+ 0.32 EUR
Mindestbestellmenge: 3000
RQ5E070BNTCL RQ5E070BNTCL Rohm Semiconductor datasheet?p=RQ5E070BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Produkt ist nicht verfügbar
RQ6E085BNTCR RQ6E085BNTCR Rohm Semiconductor datasheet?p=RQ6E085BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.88 EUR
Mindestbestellmenge: 3000
RQ7E055ATTCR RQ7E055ATTCR Rohm Semiconductor datasheet?p=RQ7E055AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+1.06 EUR
Mindestbestellmenge: 3000
RQ7E110AJTCR RQ7E110AJTCR Rohm Semiconductor datasheet?p=RQ7E110AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Produkt ist nicht verfügbar
RS3E135BNGZETB RS3E135BNGZETB Rohm Semiconductor rs3e135bngzetb-e.pdf Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Produkt ist nicht verfügbar
RYC002N05T316 RYC002N05T316 Rohm Semiconductor datasheet?p=RYC002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.19 EUR
9000+ 0.17 EUR
Mindestbestellmenge: 3000
UT6JA2TCR UT6JA2TCR Rohm Semiconductor datasheet?p=UT6JA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 30V 4A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Produkt ist nicht verfügbar
UT6K3TCR UT6K3TCR Rohm Semiconductor ut6k3tcr-e.pdf Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.67 EUR
6000+ 0.63 EUR
9000+ 0.58 EUR
Mindestbestellmenge: 3000
UT6MA3TCR UT6MA3TCR Rohm Semiconductor datasheet?p=UT6MA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 20V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.83 EUR
6000+ 0.79 EUR
9000+ 0.73 EUR
Mindestbestellmenge: 3000
SCS302APC9 SCS302APC9 Rohm Semiconductor SCS302AP Description: DIODE SCHOTTKY 650V 2A TO220-2
auf Bestellung 514 Stücke:
Lieferzeit 21-28 Tag (e)
SCS304APC9 SCS304APC9 Rohm Semiconductor datasheet?p=SCS304AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE SILICON CARBIDE 650V 4A
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 868 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.45 EUR
10+ 5.35 EUR
100+ 4.25 EUR
500+ 3.6 EUR
Mindestbestellmenge: 5
MMBZ10VALT116 MMBZ10VALT116 Rohm Semiconductor MMBZ10VAL Description: TVS DIODE 6.5VWM 14.2VC SOT23
Produkt ist nicht verfügbar
MMBZ12VALT116 MMBZ12VALT116 Rohm Semiconductor datasheet?p=MMBZ12VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 8.5VWM 17VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.35A
Voltage - Reverse Standoff (Typ): 8.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
MMBZ15VALT116 MMBZ15VALT116 Rohm Semiconductor MMBZ15VAL Description: TVS DIODE 12VWM 21VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.1 EUR
Mindestbestellmenge: 3000
MMBZ16VALT116 MMBZ16VALT116 Rohm Semiconductor mmbz16valt116-e.pdf Description: TVS DIODE 13VWM 23VC SOT23
Produkt ist nicht verfügbar
MMBZ18VALT116 MMBZ18VALT116 Rohm Semiconductor datasheet?p=MMBZ18VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 14.5VWM 25VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
MMBZ20VALT116 MMBZ20VALT116 Rohm Semiconductor datasheet?p=MMBZ20VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 17VWM 28VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
MMBZ24VALT116 MMBZ24VALT116 Rohm Semiconductor MMBZ24VAL Description: TVS DIODE 22V 32V SOT23
Produkt ist nicht verfügbar
MMBZ27VALT116 MMBZ27VALT116 Rohm Semiconductor datasheet?p=MMBZ27VAL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: TVS DIODE 22VWM 40VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
MMBZ30VALT116 MMBZ30VALT116 Rohm Semiconductor datasheet?p=MMBZ30VAL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: TVS DIODE 24VWM 43VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
MMBZ33VALT116 MMBZ33VALT116 Rohm Semiconductor MMBZ33VAL Description: TVS DIODE 26V 46V SOT23
Produkt ist nicht verfügbar
MMBZ10VALT116 MMBZ10VALT116 Rohm Semiconductor MMBZ10VAL Description: TVS DIODE 6.5VWM 14.2VC SOT23
Produkt ist nicht verfügbar
MMBZ12VALT116 MMBZ12VALT116 Rohm Semiconductor datasheet?p=MMBZ12VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 8.5VWM 17VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.35A
Voltage - Reverse Standoff (Typ): 8.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
MMBZ15VALT116 MMBZ15VALT116 Rohm Semiconductor MMBZ15VAL Description: TVS DIODE 12VWM 21VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
42+0.62 EUR
Mindestbestellmenge: 42
MMBZ16VALT116 MMBZ16VALT116 Rohm Semiconductor mmbz16valt116-e.pdf Description: TVS DIODE 13VWM 23VC SOT23
auf Bestellung 148 Stücke:
Lieferzeit 21-28 Tag (e)
MMBZ18VALT116 MMBZ18VALT116 Rohm Semiconductor datasheet?p=MMBZ18VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 14.5VWM 25VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 664 Stücke:
Lieferzeit 21-28 Tag (e)
46+0.57 EUR
67+ 0.39 EUR
136+ 0.19 EUR
500+ 0.16 EUR
Mindestbestellmenge: 46
MMBZ20VALT116 MMBZ20VALT116 Rohm Semiconductor datasheet?p=MMBZ20VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TVS DIODE 17VWM 28VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
MMBZ24VALT116 MMBZ24VALT116 Rohm Semiconductor MMBZ24VAL Description: TVS DIODE 22VWM 32VC SOT23
auf Bestellung 433 Stücke:
Lieferzeit 21-28 Tag (e)
MMBZ27VALT116 MMBZ27VALT116 Rohm Semiconductor datasheet?p=MMBZ27VAL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: TVS DIODE 22VWM 40VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 496 Stücke:
Lieferzeit 21-28 Tag (e)
44+0.6 EUR
65+ 0.41 EUR
132+ 0.2 EUR
Mindestbestellmenge: 44
MMBZ30VALT116 MMBZ30VALT116 Rohm Semiconductor datasheet?p=MMBZ30VAL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Description: TVS DIODE 24VWM 43VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
MMBZ33VALT116 MMBZ33VALT116 Rohm Semiconductor MMBZ33VAL Description: TVS DIODE 26VWM 46VC SOT23
Produkt ist nicht verfügbar
RB088BM150TL RB088BM150TL Rohm Semiconductor RB088BM150 Description: DIODE ARRAY SCHOTTKY 150V TO252
Produkt ist nicht verfügbar
RBQ10BM45ATL RBQ10BM45ATL Rohm Semiconductor Taping_TO252_TL-e.pdf Description: DIODE ARR SCHOTT 45V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Produkt ist nicht verfügbar
RF501BM2STL RF501BM2STL Rohm Semiconductor datasheet?p=RF501BM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 27500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.29 EUR
5000+ 1.23 EUR
12500+ 1.17 EUR
Mindestbestellmenge: 2500
RF505BM6STL RF505BM6STL Rohm Semiconductor datasheet?p=RF505BM6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 600V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
RF601BM2DTL RF601BM2DTL Rohm Semiconductor datasheet?p=RF601BM2D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ARRAY GP 200V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.28 EUR
Mindestbestellmenge: 2500
RFN10BM3STL RFN10BM3STL Rohm Semiconductor datasheet?p=RFN10BM3S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 350V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.27 EUR
Mindestbestellmenge: 2500
RR601BM4STL RR601BM4STL Rohm Semiconductor rr601bm4s-e.pdf Description: DIODE GEN PURP 400V 6A TO252
Produkt ist nicht verfügbar
RB088BM150TL RB088BM150TL Rohm Semiconductor RB088BM150 Description: DIODE ARRAY SCHOTTKY 150V TO252
Produkt ist nicht verfügbar
RBQ10BM45ATL RBQ10BM45ATL Rohm Semiconductor Taping_TO252_TL-e.pdf Description: DIODE ARR SCHOTT 45V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Produkt ist nicht verfügbar
RF501BM2STL RF501BM2STL Rohm Semiconductor datasheet?p=RF501BM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE GEN PURP 200V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 30771 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.12 EUR
11+ 2.55 EUR
100+ 1.99 EUR
500+ 1.68 EUR
1000+ 1.37 EUR
Mindestbestellmenge: 9
R6015KNZC8 r6015knzc17-e.pdf
R6015KNZC8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 15A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Produkt ist nicht verfügbar
R6020KNJTL datasheet?p=R6020KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Produkt ist nicht verfügbar
R6020KNX r6020knx-e.pdf
R6020KNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 399 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.73 EUR
10+ 5.66 EUR
100+ 4.58 EUR
Mindestbestellmenge: 4
R6020KNZC8 TO3PF_Inner_Structure.pdf
R6020KNZC8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 20A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Produkt ist nicht verfügbar
R6024KNJTL datasheet?p=R6024KNJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6024KNJTL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Produkt ist nicht verfügbar
R6024KNX r6024knx-e.pdf
R6024KNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 24A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 291 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.58 EUR
10+ 5.47 EUR
Mindestbestellmenge: 4
R6024KNZ1C9 datasheet?p=R6024KNZ1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6024KNZ1C9
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
R6024KNZC8 R6024KNZ
R6024KNZC8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 24A TO3PF
Produkt ist nicht verfügbar
R6030KNX r6030knx-e.pdf
R6030KNX
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 600V 30A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+8.87 EUR
10+ 7.43 EUR
500+ 5.35 EUR
Mindestbestellmenge: 3
R6030KNZ1C9 R6030KNZ1
R6030KNZ1C9
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 30A TO247
auf Bestellung 260 Stücke:
Lieferzeit 21-28 Tag (e)
R6030KNZC8 R6030KNZ
R6030KNZC8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 30A TO3PF
Produkt ist nicht verfügbar
R6035KNZC8 R6035KNZ
R6035KNZC8
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 600V 35A TO3PF
auf Bestellung 360 Stücke:
Lieferzeit 21-28 Tag (e)
RE1C002ZPTL datasheet?p=RE1C002ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RE1C002ZPTL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA EMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
Produkt ist nicht verfügbar
RF4E100AJTCR datasheet?p=RF4E100AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF4E100AJTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 4.5V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.82 EUR
6000+ 0.78 EUR
Mindestbestellmenge: 3000
RF6C055BCTCR rf6c055bctcr-e.pdf
RF6C055BCTCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 5.5A TUMT6
Produkt ist nicht verfügbar
RF6E045AJTCR datasheet?p=RF6E045AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF6E045AJTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 4.5A TUMT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.48 EUR
Mindestbestellmenge: 3000
RQ5C060BCTCL datasheet?p=RQ5C060BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5C060BCTCL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CHANNEL 20V 6A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 6A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.69 EUR
6000+ 0.66 EUR
9000+ 0.61 EUR
Mindestbestellmenge: 3000
RQ5E025ATTCL datasheet?p=RQ5E025AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E025ATTCL
Hersteller: Rohm Semiconductor
Description: MOSFET P-CHANNEL 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 91mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.32 EUR
6000+ 0.31 EUR
9000+ 0.27 EUR
Mindestbestellmenge: 3000
RQ5E030AJTCL datasheet?p=RQ5E030AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E030AJTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 3A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.36 EUR
6000+ 0.34 EUR
9000+ 0.32 EUR
Mindestbestellmenge: 3000
RQ5E070BNTCL datasheet?p=RQ5E070BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ5E070BNTCL
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 7A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 16.1mOhm @ 7A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
Produkt ist nicht verfügbar
RQ6E085BNTCR datasheet?p=RQ6E085BN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ6E085BNTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 8.5A SOT457
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 8.5A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.88 EUR
Mindestbestellmenge: 3000
RQ7E055ATTCR datasheet?p=RQ7E055AT&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ7E055ATTCR
Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 5.5A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 5.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.06 EUR
Mindestbestellmenge: 3000
RQ7E110AJTCR datasheet?p=RQ7E110AJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RQ7E110AJTCR
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A TSMT8
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 4.5A, 11V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 10mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Produkt ist nicht verfügbar
RS3E135BNGZETB rs3e135bngzetb-e.pdf
RS3E135BNGZETB
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 30V 9.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.5A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 15 V
Produkt ist nicht verfügbar
RYC002N05T316 datasheet?p=RYC002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RYC002N05T316
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.19 EUR
9000+ 0.17 EUR
Mindestbestellmenge: 3000
UT6JA2TCR datasheet?p=UT6JA2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6JA2TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
Produkt ist nicht verfügbar
UT6K3TCR ut6k3tcr-e.pdf
UT6K3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5.5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.67 EUR
6000+ 0.63 EUR
9000+ 0.58 EUR
Mindestbestellmenge: 3000
UT6MA3TCR datasheet?p=UT6MA3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UT6MA3TCR
Hersteller: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 5A HUML2020L8
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A, 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: HUML2020L8
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.83 EUR
6000+ 0.79 EUR
9000+ 0.73 EUR
Mindestbestellmenge: 3000
SCS302APC9 SCS302AP
SCS302APC9
Hersteller: Rohm Semiconductor
Description: DIODE SCHOTTKY 650V 2A TO220-2
auf Bestellung 514 Stücke:
Lieferzeit 21-28 Tag (e)
SCS304APC9 datasheet?p=SCS304AP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SCS304APC9
Hersteller: Rohm Semiconductor
Description: DIODE SILICON CARBIDE 650V 4A
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
auf Bestellung 868 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.45 EUR
10+ 5.35 EUR
100+ 4.25 EUR
500+ 3.6 EUR
Mindestbestellmenge: 5
MMBZ10VALT116 MMBZ10VAL
MMBZ10VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 6.5VWM 14.2VC SOT23
Produkt ist nicht verfügbar
MMBZ12VALT116 datasheet?p=MMBZ12VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ12VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 8.5VWM 17VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.35A
Voltage - Reverse Standoff (Typ): 8.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
MMBZ15VALT116 MMBZ15VAL
MMBZ15VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 12VWM 21VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
Mindestbestellmenge: 3000
MMBZ16VALT116 mmbz16valt116-e.pdf
MMBZ16VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 13VWM 23VC SOT23
Produkt ist nicht verfügbar
MMBZ18VALT116 datasheet?p=MMBZ18VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ18VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 14.5VWM 25VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
MMBZ20VALT116 datasheet?p=MMBZ20VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ20VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 17VWM 28VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
MMBZ24VALT116 MMBZ24VAL
MMBZ24VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 22V 32V SOT23
Produkt ist nicht verfügbar
MMBZ27VALT116 datasheet?p=MMBZ27VAL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
MMBZ27VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 22VWM 40VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
MMBZ30VALT116 datasheet?p=MMBZ30VAL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
MMBZ30VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 24VWM 43VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
MMBZ33VALT116 MMBZ33VAL
MMBZ33VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 26V 46V SOT23
Produkt ist nicht verfügbar
MMBZ10VALT116 MMBZ10VAL
MMBZ10VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 6.5VWM 14.2VC SOT23
Produkt ist nicht verfügbar
MMBZ12VALT116 datasheet?p=MMBZ12VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ12VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 8.5VWM 17VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 85pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.35A
Voltage - Reverse Standoff (Typ): 8.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
Produkt ist nicht verfügbar
MMBZ15VALT116 MMBZ15VAL
MMBZ15VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 12VWM 21VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.25V
Voltage - Clamping (Max) @ Ipp: 21V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
42+0.62 EUR
Mindestbestellmenge: 42
MMBZ16VALT116 mmbz16valt116-e.pdf
MMBZ16VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 13VWM 23VC SOT23
auf Bestellung 148 Stücke:
Lieferzeit 21-28 Tag (e)
MMBZ18VALT116 datasheet?p=MMBZ18VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ18VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 14.5VWM 25VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 60pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 14.5V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 664 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
46+0.57 EUR
67+ 0.39 EUR
136+ 0.19 EUR
500+ 0.16 EUR
Mindestbestellmenge: 46
MMBZ20VALT116 datasheet?p=MMBZ20VAL&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
MMBZ20VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 17VWM 28VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 55pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 19V
Voltage - Clamping (Max) @ Ipp: 28V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
MMBZ24VALT116 MMBZ24VAL
MMBZ24VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 22VWM 32VC SOT23
auf Bestellung 433 Stücke:
Lieferzeit 21-28 Tag (e)
MMBZ27VALT116 datasheet?p=MMBZ27VAL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
MMBZ27VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 22VWM 40VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 42pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Not For New Designs
auf Bestellung 496 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
44+0.6 EUR
65+ 0.41 EUR
132+ 0.2 EUR
Mindestbestellmenge: 44
MMBZ30VALT116 datasheet?p=MMBZ30VAL&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
MMBZ30VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 24VWM 43VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 38pF @ 1MHz
Current - Peak Pulse (10/1000µs): 950mA
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: SSD3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 43V
Power - Peak Pulse: 40W
Power Line Protection: No
Produkt ist nicht verfügbar
MMBZ33VALT116 MMBZ33VAL
MMBZ33VALT116
Hersteller: Rohm Semiconductor
Description: TVS DIODE 26VWM 46VC SOT23
Produkt ist nicht verfügbar
RB088BM150TL RB088BM150
RB088BM150TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 150V TO252
Produkt ist nicht verfügbar
RBQ10BM45ATL Taping_TO252_TL-e.pdf
RBQ10BM45ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Produkt ist nicht verfügbar
RF501BM2STL datasheet?p=RF501BM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF501BM2STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 27500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.29 EUR
5000+ 1.23 EUR
12500+ 1.17 EUR
Mindestbestellmenge: 2500
RF505BM6STL datasheet?p=RF505BM6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF505BM6STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 600V 5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
RF601BM2DTL datasheet?p=RF601BM2D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF601BM2DTL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY GP 200V 6A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.28 EUR
Mindestbestellmenge: 2500
RFN10BM3STL datasheet?p=RFN10BM3S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RFN10BM3STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 350V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.27 EUR
Mindestbestellmenge: 2500
RR601BM4STL rr601bm4s-e.pdf
RR601BM4STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 400V 6A TO252
Produkt ist nicht verfügbar
RB088BM150TL RB088BM150
RB088BM150TL
Hersteller: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 150V TO252
Produkt ist nicht verfügbar
RBQ10BM45ATL Taping_TO252_TL-e.pdf
RBQ10BM45ATL
Hersteller: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Produkt ist nicht verfügbar
RF501BM2STL datasheet?p=RF501BM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF501BM2STL
Hersteller: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 30771 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.12 EUR
11+ 2.55 EUR
100+ 1.99 EUR
500+ 1.68 EUR
1000+ 1.37 EUR
Mindestbestellmenge: 9
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