Suchergebnisse für "n2907" : > 180
Art der Ansicht :
Mindestbestellmenge: 70
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| PN2907AG |
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auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PN2907AGSOT-89T/R |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PN2907AGTO-92 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PN2907AGTO-92T/B |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PN2907AJ05ZSPECFLOW | Fairchild |
auf Bestellung 20965 Stücke: Lieferzeit 21-28 Tag (e) |
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| PN2907AL-AB |
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PN2907AL-AB3-R |
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PN2907ALSOT-89T/R |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PN2907ALTO-92 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PN2907ALTO-92T/B |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PN2907AT93 |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PN2907ATA | Fairchild |
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auf Bestellung 110000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PN2907ATAR |
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auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) |
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| PN2907ATFR | Fairchild |
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auf Bestellung 194000 Stücke: Lieferzeit 21-28 Tag (e) |
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| RN2907 | TOSHIBA | 02+ SOT-323-6 |
auf Bestellung 11800 Stücke: Lieferzeit 21-28 Tag (e) |
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| RN2907 | TOSHIBA |
auf Bestellung 9200 Stücke: Lieferzeit 21-28 Tag (e) |
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| RN2907-T1 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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| RN2907/YH |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| RN2907FE |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| ST2N2907Fe |
auf Bestellung 29000 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN2907 |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN2907-A-T |
auf Bestellung 3175 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN2907A | AUK | SOT23 06+ |
auf Bestellung 10800 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN2907A-AT |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN2907AS | AUK | 09+ |
auf Bestellung 1218 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN2907AS | AUK |
auf Bestellung 7400 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN2907AS | AUK | 00+ SOT-23 |
auf Bestellung 3999 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN2907ASF | AUK | SOT23 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN2907S/MMBT2907A | AUK | 06+ SOT-23 |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN2907SF | AUK | SOT23-GA |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN2907SF SOT23-GA | AUK |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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| STN2907SFSOT23-GA | AUK |
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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| TN2907A |
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auf Bestellung 2656 Stücke: Lieferzeit 21-28 Tag (e) |
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| Транзистор 2N2907 |
auf Bestellung 3 Stücke: Lieferzeit 7-21 Tag (e) |
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| Транзистор біполярний 2N2907 -0.6A -40V PNP TO-92 |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SB1197 T146R | ROHM | SOT23-GA STN2907 |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N2907A Produktcode: 83731 |
ST |
Transistoren > Bipolar-Transistoren PNP Gehäuse: TO-18 fT: 200 MHz U, V: 60 U, V: 60 I, А: 0.6 |
Produkt ist nicht verfügbar
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,TO-226_bentlead.jpg "P2N2907ARL1G") |
P2N2907ARL1G Produktcode: 53403 |
Verschiedene Bauteile > Verschiedene Bauteile 2 |
Produkt ist nicht verfügbar
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PN2907A Produktcode: 170232 |
Transistoren > Bipolar-Transistoren PNP Gehäuse: TO-92 U, V: 60 V U, V: 60 V |
Produkt ist nicht verfügbar
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PN2907ABU Produktcode: 197779 |
Sicherungen > Thermosicherungen |
Produkt ist nicht verfügbar
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TPN2907A Produktcode: 187366 |
Transistoren > Bipolar-Transistoren PNP |
Produkt ist nicht verfügbar
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2N2907 | CDIL |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.4/1.8W Case: TO18 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1737 Stücke: Lieferzeit 7-14 Tag (e) |
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2N2907 | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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| 2N2907 PBFREE | Central Semiconductor Corp |
Description: TRANS PNP 40V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.8 W |
Produkt ist nicht verfügbar |
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| 2N2907A | Diotec Semiconductor |
Description: BJT TO92 60V 600MA PNP 0.625W Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 250MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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| 2N2907A | Diotec Semiconductor |
Description: BJT TO92 60V 600MA PNP 0.625W Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 250MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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2N2907A | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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2N2907A | Micro Commercial Co |
Description: BJT TO92 60V PNP 0.625W 150C Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW |
Produkt ist nicht verfügbar |
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2N2907A | Diotec Semiconductor |
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo |
Produkt ist nicht verfügbar |
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2N2907A | Microchip Technology |
Trans GP BJT PNP 60V 0.6A 500mW 3-Pin TO-18 Bag |
Produkt ist nicht verfügbar |
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2N2907AE3 | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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| 2N2907AE3 | Microchip Technology |
BJTs |
Produkt ist nicht verfügbar |
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| 2N2907AE3 | Microchip Technology |
Small-Signal BJT |
Produkt ist nicht verfügbar |
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| 2N2907AE3/TR | Microchip Technology |
BJTs |
Produkt ist nicht verfügbar |
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2N2907AE4 | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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| 2N2907AE4 | Microchip Technology |
Transistor PNP TO18 |
Produkt ist nicht verfügbar |
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2N2907AL | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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| 2N2907AP | Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
Produkt ist nicht verfügbar |
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| 2N2907ARUBG | STMicroelectronics |
Trans GP BJT PNP 60V 0.5A 730mW 4-Pin LCC-3UB Tray |
Produkt ist nicht verfügbar |
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| 2N2907ARUBT | STMicroelectronics |
Trans GP BJT PNP 60V 0.5A 730mW 4-Pin LCC-3UB Tray |
Produkt ist nicht verfügbar |
| 2N2907A Produktcode: 83731 |
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Hersteller: ST
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-18
fT: 200 MHz
U, V: 60
U, V: 60
I, А: 0.6
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-18
fT: 200 MHz
U, V: 60
U, V: 60
I, А: 0.6
Produkt ist nicht verfügbar
| PN2907A Produktcode: 170232 |
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Produkt ist nicht verfügbar
| 2N2907 |
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Hersteller: CDIL
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1737 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 70+ | 1.03 EUR |
| 106+ | 0.68 EUR |
| 176+ | 0.41 EUR |
| 236+ | 0.3 EUR |
| 250+ | 0.29 EUR |
| 2N2907 |
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Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| 2N2907 PBFREE |
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Hersteller: Central Semiconductor Corp
Description: TRANS PNP 40V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
Description: TRANS PNP 40V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
Produkt ist nicht verfügbar
| 2N2907A |
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Hersteller: Diotec Semiconductor
Description: BJT TO92 60V 600MA PNP 0.625W
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: BJT TO92 60V 600MA PNP 0.625W
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
| 2N2907A |
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Hersteller: Diotec Semiconductor
Description: BJT TO92 60V 600MA PNP 0.625W
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: BJT TO92 60V 600MA PNP 0.625W
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
| 2N2907A |
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Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| 2N2907A |
|
Hersteller: Micro Commercial Co
Description: BJT TO92 60V PNP 0.625W 150C
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Description: BJT TO92 60V PNP 0.625W 150C
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
| 2N2907A |
|
Hersteller: Diotec Semiconductor
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo
Produkt ist nicht verfügbar
| 2N2907A |
|
Hersteller: Microchip Technology
Trans GP BJT PNP 60V 0.6A 500mW 3-Pin TO-18 Bag
Trans GP BJT PNP 60V 0.6A 500mW 3-Pin TO-18 Bag
Produkt ist nicht verfügbar
| 2N2907AE3 |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| 2N2907AE4 |
|
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| 2N2907AL |
|
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| 2N2907AP |
Hersteller: Microchip Technology
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
Produkt ist nicht verfügbar
| 2N2907ARUBG |
|
Hersteller: STMicroelectronics
Trans GP BJT PNP 60V 0.5A 730mW 4-Pin LCC-3UB Tray
Trans GP BJT PNP 60V 0.5A 730mW 4-Pin LCC-3UB Tray
Produkt ist nicht verfügbar
| 2N2907ARUBT |
|
Hersteller: STMicroelectronics
Trans GP BJT PNP 60V 0.5A 730mW 4-Pin LCC-3UB Tray
Trans GP BJT PNP 60V 0.5A 730mW 4-Pin LCC-3UB Tray
Produkt ist nicht verfügbar