Suchergebnisse für "n555" : > 120

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2N5551 2N5551 Diotec Semiconductor 2n5551.pdf Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Ammo
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
2N5551 2N5551 Diotec Semiconductor 2n5551.pdf 2n5551.pdf Bipolar Transistors - BJT BJT, TO-92, 160V, 600mA, NPN
auf Bestellung 6773 Stücke:
Lieferzeit 14-28 Tag (e)
166+0.31 EUR
223+ 0.23 EUR
267+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.14 EUR
4000+ 0.1 EUR
8000+ 0.065 EUR
Mindestbestellmenge: 166
2N5551 Diotec 2n5551.pdf 2n5551.pdf Транз. Бипол. ММ NPN TO92 Uceo=160V; Ic=0,6A; f=300MHz; Pdmax=0,63W; hfemin=80
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
1+0.19 EUR
10+ 0.17 EUR
2N5551 Diotec Semiconductor 2n5551.pdf 2n5551.pdf Транзистор NPN; Ptot, Вт = 0,625; Uceo, В = 180; Ic = 600 мА; Тип монт. = вивідний; ft, МГц = 100; hFE = 80/125 @ 10 мА; Icutoff-max = 50 нА; Тексп, °С = -55...+150; TO-92-3
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
59+0.11 EUR
64+ 0.098 EUR
100+ 0.086 EUR
Mindestbestellmenge: 59
2N5551 2N5551 Diotec Semiconductor 2n5551.pdf Description: TRANS NPN 160V 0.6A TO92
Packaging: Strip
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 3721 Stücke:
Lieferzeit 21-28 Tag (e)
45+0.58 EUR
62+ 0.42 EUR
100+ 0.36 EUR
250+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.18 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 45
2N5551 2N5551 Lumimax Optoelectronic Technology 2n5551.pdf 2n5551.pdf Description: TRANS NPN EBC 0.6A 160V TO-92
Packaging: Bulk
auf Bestellung 2960 Stücke:
Lieferzeit 21-28 Tag (e)
39+0.67 EUR
50+ 0.58 EUR
100+ 0.48 EUR
200+ 0.41 EUR
500+ 0.36 EUR
1000+ 0.3 EUR
2000+ 0.21 EUR
Mindestbestellmenge: 39
2N5551 TIN/LEAD 2N5551 TIN/LEAD Central Semiconductor get_document-1510795.pdf Bipolar Transistors - BJT NPN 180Vcbo 160Vceo 6.0Vebo 600mA 625mW
auf Bestellung 1370 Stücke:
Lieferzeit 14-28 Tag (e)
22+2.44 EUR
26+ 2 EUR
100+ 1.56 EUR
500+ 1.43 EUR
1000+ 1.04 EUR
5000+ 0.96 EUR
Mindestbestellmenge: 22
2N5551 TIN/LEAD 2N5551 TIN/LEAD Central Semiconductor Corp 2N5550_2N5551.PDF Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 2210 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.42 EUR
14+ 1.99 EUR
100+ 1.55 EUR
1000+ 1.07 EUR
Mindestbestellmenge: 11
2N5551-T 2N5551-T Rectron Rectron_11_30_2020_2N5551-1951896.pdf Bipolar Transistors - BJT NPN 0.6A 160V
auf Bestellung 8622 Stücke:
Lieferzeit 14-28 Tag (e)
52+1.01 EUR
70+ 0.75 EUR
123+ 0.42 EUR
1000+ 0.22 EUR
2000+ 0.18 EUR
10000+ 0.15 EUR
24000+ 0.14 EUR
Mindestbestellmenge: 52
2N5551BU 2N5551BU ON Semiconductor 2n5551t-d.pdf Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Bag
auf Bestellung 20013 Stücke:
Lieferzeit 14-21 Tag (e)
2N5551BU 2N5551BU onsemi / Fairchild 2N5551T_D-2997661.pdf Bipolar Transistors - BJT NPN Transistor General Purpose
auf Bestellung 16891 Stücke:
Lieferzeit 14-28 Tag (e)
60+0.87 EUR
88+ 0.6 EUR
213+ 0.24 EUR
1000+ 0.15 EUR
2500+ 0.14 EUR
10000+ 0.11 EUR
30000+ 0.1 EUR
Mindestbestellmenge: 60
2N5551BU 2N5551BU onsemi technical-documentation?notFound=2N5551-D.PDF Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 400804 Stücke:
Lieferzeit 21-28 Tag (e)
30+0.88 EUR
44+ 0.6 EUR
100+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
5000+ 0.14 EUR
10000+ 0.11 EUR
50000+ 0.1 EUR
Mindestbestellmenge: 30
2N5551G 2N5551G onsemi 2n5550-d.pdf description Description: TRANS NPN 160V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 201370 Stücke:
Lieferzeit 21-28 Tag (e)
3806+0.19 EUR
Mindestbestellmenge: 3806
2N5551RL1G 2N5551RL1G onsemi 2n5550-d.pdf Description: TRANS NPN 160V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 110143 Stücke:
Lieferzeit 21-28 Tag (e)
3806+0.19 EUR
Mindestbestellmenge: 3806
2N5551RLRPG 2N5551RLRPG onsemi 2n5550-d.pdf Description: TRANS NPN 160V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 416513 Stücke:
Lieferzeit 21-28 Tag (e)
3806+0.19 EUR
Mindestbestellmenge: 3806
2N5551TA 2N5551TA ONSEMI 2N5551.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
2N5551TA 2N5551TA onsemi / Fairchild 2N5551T_D-2997661.pdf Bipolar Transistors - BJT NPN Transistor General Purpose
auf Bestellung 12482 Stücke:
Lieferzeit 14-28 Tag (e)
66+0.8 EUR
93+ 0.56 EUR
218+ 0.24 EUR
1000+ 0.16 EUR
2000+ 0.13 EUR
10000+ 0.11 EUR
24000+ 0.1 EUR
Mindestbestellmenge: 66
2N5551TA 2N5551TA onsemi technical-documentation?notFound=2N5551-D.PDF Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.14 EUR
6000+ 0.13 EUR
10000+ 0.11 EUR
Mindestbestellmenge: 2000
2N5551TA 2N5551TA onsemi technical-documentation?notFound=2N5551-D.PDF Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 5479 Stücke:
Lieferzeit 21-28 Tag (e)
32+0.83 EUR
45+ 0.58 EUR
100+ 0.28 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 32
2N5551TF 2N5551TF ONSEMI technical-documentation?notFound=2N5551-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
670+0.11 EUR
720+ 0.099 EUR
Mindestbestellmenge: 670
2N5551TF 2N5551TF ONSEMI technical-documentation?notFound=2N5551-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 720 Stücke:
Lieferzeit 7-14 Tag (e)
670+0.11 EUR
720+ 0.099 EUR
10000+ 0.06 EUR
Mindestbestellmenge: 670
2N5551TF 2N5551TF onsemi / Fairchild 2N5551T_D-2997661.pdf Bipolar Transistors - BJT NPN Transistor General Purpose
auf Bestellung 6973 Stücke:
Lieferzeit 14-28 Tag (e)
62+0.85 EUR
89+ 0.59 EUR
218+ 0.24 EUR
1000+ 0.16 EUR
2000+ 0.13 EUR
10000+ 0.11 EUR
24000+ 0.1 EUR
Mindestbestellmenge: 62
2N5551TF 2N5551TF ON Semiconductor 2n5551-d.pdf Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 T/R
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
2N5551TF 2N5551TF onsemi technical-documentation?notFound=2N5551-D.PDF Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 48764 Stücke:
Lieferzeit 21-28 Tag (e)
32+0.83 EUR
45+ 0.58 EUR
100+ 0.28 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 32
2N5551TF 2N5551TF onsemi technical-documentation?notFound=2N5551-D.PDF Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 48000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.1 EUR
6000+ 0.093 EUR
10000+ 0.08 EUR
Mindestbestellmenge: 2000
2N5551TFR 2N5551TFR ONSEMI technical-documentation?notFound=2N5551-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1690 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.089 EUR
930+ 0.077 EUR
1185+ 0.06 EUR
1250+ 0.057 EUR
Mindestbestellmenge: 800
2N5551TFR 2N5551TFR ONSEMI technical-documentation?notFound=2N5551-D.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1690 Stücke:
Lieferzeit 7-14 Tag (e)
800+0.089 EUR
930+ 0.077 EUR
1185+ 0.06 EUR
1250+ 0.057 EUR
Mindestbestellmenge: 800
2N5551TFR 2N5551TFR onsemi / Fairchild 2N5551T_D-2997661.pdf Bipolar Transistors - BJT NPN Transistor General Purpose
auf Bestellung 17984 Stücke:
Lieferzeit 14-28 Tag (e)
60+0.87 EUR
91+ 0.57 EUR
223+ 0.23 EUR
1000+ 0.17 EUR
2000+ 0.13 EUR
10000+ 0.12 EUR
24000+ 0.1 EUR
Mindestbestellmenge: 60
2N5551TFR 2N5551TFR onsemi technical-documentation?notFound=2N5551-D.PDF Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 7295 Stücke:
Lieferzeit 21-28 Tag (e)
31+0.86 EUR
45+ 0.58 EUR
100+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
2N5551TFR 2N5551TFR onsemi technical-documentation?notFound=2N5551-D.PDF Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.1 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 2000
2N5551YBU 2N5551YBU onsemi technical-documentation?notFound=2N5551-D.PDF Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 19909 Stücke:
Lieferzeit 21-28 Tag (e)
31+0.86 EUR
45+ 0.58 EUR
100+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
2000+ 0.14 EUR
5000+ 0.13 EUR
10000+ 0.11 EUR
Mindestbestellmenge: 31
2N5551YTA 2N5551YTA onsemi technical-documentation?notFound=2N5551-D.PDF Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 1564 Stücke:
Lieferzeit 21-28 Tag (e)
32+0.83 EUR
45+ 0.59 EUR
100+ 0.3 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 32
2N5551ZL1G 2N5551ZL1G onsemi 2n5550-d.pdf Description: TRANS NPN 160V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 31679 Stücke:
Lieferzeit 21-28 Tag (e)
3806+0.19 EUR
Mindestbestellmenge: 3806
JAN1N5550 JAN1N5550 Microchip / Microsemi LDS_0230-1592115.pdf Rectifiers 200 V Std Rectifier
auf Bestellung 20 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.03 EUR
10+ 14.69 EUR
25+ 14.59 EUR
100+ 13.75 EUR
250+ 13.16 EUR
Mindestbestellmenge: 4
JAN1N5550 JAN1N5550 Microchip Technology lds-0230.pdf Rectifier Diode Switching 200V 5A 2000ns 2-Pin Case E Bag
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
JAN1N5551 JAN1N5551 Microchip / Microsemi LDS_0230-1592115.pdf Rectifiers 400 V Std Rectifier
auf Bestellung 414 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.73 EUR
25+ 13.7 EUR
100+ 13.03 EUR
250+ 12.77 EUR
Mindestbestellmenge: 4
JAN1N5552 JAN1N5552 Microchip / Microsemi LDS_0230-1592115.pdf Rectifiers 600 V Std Rectifier
auf Bestellung 561 Stücke:
Lieferzeit 182-196 Tag (e)
5+11.7 EUR
10+ 11.67 EUR
100+ 10.92 EUR
Mindestbestellmenge: 5
JAN1N5553 JAN1N5553 Microchip / Microsemi LDS_0230-1592115.pdf Rectifiers 800 V Std Rectifier
auf Bestellung 28 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.93 EUR
25+ 16.9 EUR
100+ 15.73 EUR
Mindestbestellmenge: 4
JAN1N5555 JAN1N5555 Microchip / Microsemi LDS_0094-1651814.pdf ESD Suppressors / TVS Diodes 47.5V 32A Uni-Directional TVS
auf Bestellung 38 Stücke:
Lieferzeit 14-28 Tag (e)
1+106.68 EUR
10+ 106.65 EUR
25+ 106.63 EUR
100+ 99.03 EUR
JANS1N5552 JANS1N5552 Microchip / Microsemi LDS_0230-1592115.pdf Rectifiers 600 V Std Rectifier
auf Bestellung 10 Stücke:
Lieferzeit 14-28 Tag (e)
1+183.14 EUR
100+ 170.07 EUR
JANTX1N5550 JANTX1N5550 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 200V 5A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/420
auf Bestellung 89 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.79 EUR
Mindestbestellmenge: 2
JANTX1N5550 JANTX1N5550 Microchip / Microsemi LDS_0230-1592115.pdf Rectifiers 200 V Std Rectifier
auf Bestellung 232 Stücke:
Lieferzeit 182-196 Tag (e)
4+14.69 EUR
25+ 14.66 EUR
100+ 13.83 EUR
Mindestbestellmenge: 4
JANTX1N5551 JANTX1N5551 Microchip / Microsemi LDS_0230-1592115.pdf Rectifiers 400 V Std Rectifier
auf Bestellung 165 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.95 EUR
100+ 13.88 EUR
250+ 13.6 EUR
Mindestbestellmenge: 4
JANTX1N5551US JANTX1N5551US Microchip / Microsemi 10966-sa7-43-datasheet Rectifiers 400 V Std Rectifier
auf Bestellung 666 Stücke:
Lieferzeit 14-28 Tag (e)
3+22.7 EUR
10+ 22.67 EUR
100+ 21.53 EUR
500+ 21.09 EUR
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JANTX1N5551US JANTX1N5551US Microchip Technology 10966-sa7-43-datasheet Description: DIODE GEN PURP 400V 5A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
auf Bestellung 37 Stücke:
Lieferzeit 21-28 Tag (e)
2+22.54 EUR
Mindestbestellmenge: 2
JANTX1N5552 JANTX1N5552 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 600V 5A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/420
auf Bestellung 39 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.29 EUR
Mindestbestellmenge: 2
JANTX1N5552 JANTX1N5552 Microchip / Microsemi LDS_0230-1592115.pdf Rectifiers 600 V Std Rectifier
auf Bestellung 4015 Stücke:
Lieferzeit 182-196 Tag (e)
4+13.36 EUR
100+ 12.43 EUR
Mindestbestellmenge: 4
JANTX1N5552US JANTX1N5552US Microchip / Microsemi 10966-sa7-43-datasheet vleUsHb68.FCDqQHUe4L8QjGXawM1c89FiGabW6AFo8 Rectifiers 600 V Std Rectifier
auf Bestellung 44 Stücke:
Lieferzeit 14-28 Tag (e)
3+22.75 EUR
10+ 22.52 EUR
25+ 22.41 EUR
100+ 22.15 EUR
Mindestbestellmenge: 3
JANTX1N5553 JANTX1N5553 Microchip / Microsemi LDS_0230-1592115.pdf Rectifiers 800 V Std Rectifier
auf Bestellung 822 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.74 EUR
25+ 16.61 EUR
100+ 16.2 EUR
Mindestbestellmenge: 4
JANTX1N5553 JANTX1N5553 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 5A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: MIL-PRF-19500/420
auf Bestellung 37 Stücke:
Lieferzeit 21-28 Tag (e)
2+17.32 EUR
Mindestbestellmenge: 2
JANTX1N5554 JANTX1N5554 Microchip / Microsemi LDS_0230-1592115.pdf Rectifiers 1000 V Std Rectifier
auf Bestellung 576 Stücke:
Lieferzeit 14-28 Tag (e)
3+18.51 EUR
100+ 17.21 EUR
Mindestbestellmenge: 3
JANTX1N5554 JANTX1N5554 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 1KV 5A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Qualification: MIL-PRF-19500/420
auf Bestellung 89 Stücke:
Lieferzeit 21-28 Tag (e)
2+18.38 EUR
Mindestbestellmenge: 2
JANTX1N5555 JANTX1N5555 Microchip / Microsemi LDS_0094-1651814.pdf ESD Suppressors / TVS Diodes 47.5V 32A Uni-Directional TVS
auf Bestellung 96 Stücke:
Lieferzeit 14-28 Tag (e)
1+134.06 EUR
10+ 133.15 EUR
25+ 132.86 EUR
100+ 132.03 EUR
JANTX1N5555 JANTX1N5555 Microchip Technology 8920-lds-0094-datasheet Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/500
auf Bestellung 95 Stücke:
Lieferzeit 21-28 Tag (e)
1+141.18 EUR
JANTX1N5556 JANTX1N5556 Microchip / Microsemi LDS_0094-1651814.pdf ESD Suppressors / TVS Diodes 63.5V 24A Uni-Directional TVS
auf Bestellung 141 Stücke:
Lieferzeit 14-28 Tag (e)
1+142.19 EUR
10+ 142.17 EUR
25+ 142.14 EUR
100+ 134.68 EUR
250+ 132.03 EUR
JANTX1N5557 JANTX1N5557 Microchip / Microsemi LDS_0094-1651814.pdf ESD Suppressors / TVS Diodes 78.5V 19A Uni-Directional TVS
auf Bestellung 45 Stücke:
Lieferzeit 14-28 Tag (e)
1+101.58 EUR
10+ 101.56 EUR
25+ 101.5 EUR
100+ 94.3 EUR
JANTXV1N5552 JANTXV1N5552 Microchip / Microsemi LDS_0230-1592115.pdf Rectifiers 600 V Std Rectifier
auf Bestellung 464 Stücke:
Lieferzeit 14-28 Tag (e)
2+38.56 EUR
100+ 35.8 EUR
Mindestbestellmenge: 2
SN5-5501 SN5-5501 KEMET KEM_LF0057_SN.pdf Category: Vertical inductors
Description: Inductor: wire; THT; 80uH; 1A; 200uΩ; -25÷105°C
Mounting: THT
Operating temperature: -25...105°C
Operating current: 1A
Resistance: 200µΩ
Type of inductor: wire
Inductance: 80µH
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.09 EUR
48+ 1.51 EUR
63+ 1.15 EUR
66+ 1.09 EUR
Mindestbestellmenge: 35
SN5-5501 SN5-5501 KEMET KEM_LF0057_SN-3316903.pdf Common Mode Chokes / Filters 80uH 1A DCR=200mOhms
auf Bestellung 278 Stücke:
Lieferzeit 14-28 Tag (e)
16+3.25 EUR
19+ 2.78 EUR
100+ 1.98 EUR
Mindestbestellmenge: 16
SN5-5501 SN5-5501 KEMET KEM_LF0057_SN.pdf Description: NMC 80.0UH 1.0A 0.2000 OHM TH
Packaging: Bulk
Package / Case: Vertical, No Base, 2 PC Pin
Filter Type: Power Line
Mounting Type: Through Hole
Number of Lines: 2
Operating Temperature: -25°C ~ 105°C
Part Status: Active
Inductance @ Frequency: 80 µH @ 100 kHz
auf Bestellung 191 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.22 EUR
10+ 2.74 EUR
25+ 2.53 EUR
50+ 2.26 EUR
100+ 1.89 EUR
Mindestbestellmenge: 9
2N5551 2n5551.pdf
2N5551
Hersteller: Diotec Semiconductor
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Ammo
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
2N5551 2n5551.pdf 2n5551.pdf
2N5551
Hersteller: Diotec Semiconductor
Bipolar Transistors - BJT BJT, TO-92, 160V, 600mA, NPN
auf Bestellung 6773 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
166+0.31 EUR
223+ 0.23 EUR
267+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.14 EUR
4000+ 0.1 EUR
8000+ 0.065 EUR
Mindestbestellmenge: 166
2N5551 2n5551.pdf 2n5551.pdf
Hersteller: Diotec
Транз. Бипол. ММ NPN TO92 Uceo=160V; Ic=0,6A; f=300MHz; Pdmax=0,63W; hfemin=80
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+0.19 EUR
10+ 0.17 EUR
2N5551 2n5551.pdf 2n5551.pdf
Hersteller: Diotec Semiconductor
Транзистор NPN; Ptot, Вт = 0,625; Uceo, В = 180; Ic = 600 мА; Тип монт. = вивідний; ft, МГц = 100; hFE = 80/125 @ 10 мА; Icutoff-max = 50 нА; Тексп, °С = -55...+150; TO-92-3
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
59+0.11 EUR
64+ 0.098 EUR
100+ 0.086 EUR
Mindestbestellmenge: 59
2N5551 2n5551.pdf
2N5551
Hersteller: Diotec Semiconductor
Description: TRANS NPN 160V 0.6A TO92
Packaging: Strip
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 3721 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
45+0.58 EUR
62+ 0.42 EUR
100+ 0.36 EUR
250+ 0.25 EUR
500+ 0.22 EUR
1000+ 0.18 EUR
2000+ 0.12 EUR
Mindestbestellmenge: 45
2N5551 2n5551.pdf 2n5551.pdf
2N5551
Hersteller: Lumimax Optoelectronic Technology
Description: TRANS NPN EBC 0.6A 160V TO-92
Packaging: Bulk
auf Bestellung 2960 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
39+0.67 EUR
50+ 0.58 EUR
100+ 0.48 EUR
200+ 0.41 EUR
500+ 0.36 EUR
1000+ 0.3 EUR
2000+ 0.21 EUR
Mindestbestellmenge: 39
2N5551 TIN/LEAD get_document-1510795.pdf
2N5551 TIN/LEAD
Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN 180Vcbo 160Vceo 6.0Vebo 600mA 625mW
auf Bestellung 1370 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
22+2.44 EUR
26+ 2 EUR
100+ 1.56 EUR
500+ 1.43 EUR
1000+ 1.04 EUR
5000+ 0.96 EUR
Mindestbestellmenge: 22
2N5551 TIN/LEAD 2N5550_2N5551.PDF
2N5551 TIN/LEAD
Hersteller: Central Semiconductor Corp
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 2210 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.42 EUR
14+ 1.99 EUR
100+ 1.55 EUR
1000+ 1.07 EUR
Mindestbestellmenge: 11
2N5551-T Rectron_11_30_2020_2N5551-1951896.pdf
2N5551-T
Hersteller: Rectron
Bipolar Transistors - BJT NPN 0.6A 160V
auf Bestellung 8622 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
52+1.01 EUR
70+ 0.75 EUR
123+ 0.42 EUR
1000+ 0.22 EUR
2000+ 0.18 EUR
10000+ 0.15 EUR
24000+ 0.14 EUR
Mindestbestellmenge: 52
2N5551BU 2n5551t-d.pdf
2N5551BU
Hersteller: ON Semiconductor
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Bag
auf Bestellung 20013 Stücke:
Lieferzeit 14-21 Tag (e)
2N5551BU 2N5551T_D-2997661.pdf
2N5551BU
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Transistor General Purpose
auf Bestellung 16891 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
60+0.87 EUR
88+ 0.6 EUR
213+ 0.24 EUR
1000+ 0.15 EUR
2500+ 0.14 EUR
10000+ 0.11 EUR
30000+ 0.1 EUR
Mindestbestellmenge: 60
2N5551BU technical-documentation?notFound=2N5551-D.PDF
2N5551BU
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 400804 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
44+ 0.6 EUR
100+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
5000+ 0.14 EUR
10000+ 0.11 EUR
50000+ 0.1 EUR
Mindestbestellmenge: 30
2N5551G description 2n5550-d.pdf
2N5551G
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 201370 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3806+0.19 EUR
Mindestbestellmenge: 3806
2N5551RL1G 2n5550-d.pdf
2N5551RL1G
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 110143 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3806+0.19 EUR
Mindestbestellmenge: 3806
2N5551RLRPG 2n5550-d.pdf
2N5551RLRPG
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 416513 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3806+0.19 EUR
Mindestbestellmenge: 3806
2N5551TA 2N5551.PDF
2N5551TA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
2N5551TA 2N5551T_D-2997661.pdf
2N5551TA
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Transistor General Purpose
auf Bestellung 12482 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
66+0.8 EUR
93+ 0.56 EUR
218+ 0.24 EUR
1000+ 0.16 EUR
2000+ 0.13 EUR
10000+ 0.11 EUR
24000+ 0.1 EUR
Mindestbestellmenge: 66
2N5551TA technical-documentation?notFound=2N5551-D.PDF
2N5551TA
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+0.14 EUR
6000+ 0.13 EUR
10000+ 0.11 EUR
Mindestbestellmenge: 2000
2N5551TA technical-documentation?notFound=2N5551-D.PDF
2N5551TA
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 5479 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
32+0.83 EUR
45+ 0.58 EUR
100+ 0.28 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 32
2N5551TF technical-documentation?notFound=2N5551-D.PDF
2N5551TF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
670+0.11 EUR
720+ 0.099 EUR
Mindestbestellmenge: 670
2N5551TF technical-documentation?notFound=2N5551-D.PDF
2N5551TF
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 720 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
670+0.11 EUR
720+ 0.099 EUR
10000+ 0.06 EUR
Mindestbestellmenge: 670
2N5551TF 2N5551T_D-2997661.pdf
2N5551TF
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Transistor General Purpose
auf Bestellung 6973 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
62+0.85 EUR
89+ 0.59 EUR
218+ 0.24 EUR
1000+ 0.16 EUR
2000+ 0.13 EUR
10000+ 0.11 EUR
24000+ 0.1 EUR
Mindestbestellmenge: 62
2N5551TF 2n5551-d.pdf
2N5551TF
Hersteller: ON Semiconductor
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 T/R
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
2N5551TF technical-documentation?notFound=2N5551-D.PDF
2N5551TF
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 48764 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
32+0.83 EUR
45+ 0.58 EUR
100+ 0.28 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 32
2N5551TF technical-documentation?notFound=2N5551-D.PDF
2N5551TF
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 48000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+0.1 EUR
6000+ 0.093 EUR
10000+ 0.08 EUR
Mindestbestellmenge: 2000
2N5551TFR technical-documentation?notFound=2N5551-D.PDF
2N5551TFR
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1690 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
800+0.089 EUR
930+ 0.077 EUR
1185+ 0.06 EUR
1250+ 0.057 EUR
Mindestbestellmenge: 800
2N5551TFR technical-documentation?notFound=2N5551-D.PDF
2N5551TFR
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 30...250
Mounting: THT
Kind of package: reel; tape
Frequency: 100MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1690 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
800+0.089 EUR
930+ 0.077 EUR
1185+ 0.06 EUR
1250+ 0.057 EUR
Mindestbestellmenge: 800
2N5551TFR 2N5551T_D-2997661.pdf
2N5551TFR
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Transistor General Purpose
auf Bestellung 17984 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
60+0.87 EUR
91+ 0.57 EUR
223+ 0.23 EUR
1000+ 0.17 EUR
2000+ 0.13 EUR
10000+ 0.12 EUR
24000+ 0.1 EUR
Mindestbestellmenge: 60
2N5551TFR technical-documentation?notFound=2N5551-D.PDF
2N5551TFR
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 7295 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
31+0.86 EUR
45+ 0.58 EUR
100+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 31
2N5551TFR technical-documentation?notFound=2N5551-D.PDF
2N5551TFR
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+0.1 EUR
6000+ 0.094 EUR
Mindestbestellmenge: 2000
2N5551YBU technical-documentation?notFound=2N5551-D.PDF
2N5551YBU
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 19909 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
31+0.86 EUR
45+ 0.58 EUR
100+ 0.29 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
2000+ 0.14 EUR
5000+ 0.13 EUR
10000+ 0.11 EUR
Mindestbestellmenge: 31
2N5551YTA technical-documentation?notFound=2N5551-D.PDF
2N5551YTA
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 1564 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
32+0.83 EUR
45+ 0.59 EUR
100+ 0.3 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 32
2N5551ZL1G 2n5550-d.pdf
2N5551ZL1G
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
auf Bestellung 31679 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3806+0.19 EUR
Mindestbestellmenge: 3806
JAN1N5550 LDS_0230-1592115.pdf
JAN1N5550
Hersteller: Microchip / Microsemi
Rectifiers 200 V Std Rectifier
auf Bestellung 20 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+15.03 EUR
10+ 14.69 EUR
25+ 14.59 EUR
100+ 13.75 EUR
250+ 13.16 EUR
Mindestbestellmenge: 4
JAN1N5550 lds-0230.pdf
JAN1N5550
Hersteller: Microchip Technology
Rectifier Diode Switching 200V 5A 2000ns 2-Pin Case E Bag
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
JAN1N5551 LDS_0230-1592115.pdf
JAN1N5551
Hersteller: Microchip / Microsemi
Rectifiers 400 V Std Rectifier
auf Bestellung 414 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+13.73 EUR
25+ 13.7 EUR
100+ 13.03 EUR
250+ 12.77 EUR
Mindestbestellmenge: 4
JAN1N5552 LDS_0230-1592115.pdf
JAN1N5552
Hersteller: Microchip / Microsemi
Rectifiers 600 V Std Rectifier
auf Bestellung 561 Stücke:
Lieferzeit 182-196 Tag (e)
Anzahl Preis ohne MwSt
5+11.7 EUR
10+ 11.67 EUR
100+ 10.92 EUR
Mindestbestellmenge: 5
JAN1N5553 LDS_0230-1592115.pdf
JAN1N5553
Hersteller: Microchip / Microsemi
Rectifiers 800 V Std Rectifier
auf Bestellung 28 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+16.93 EUR
25+ 16.9 EUR
100+ 15.73 EUR
Mindestbestellmenge: 4
JAN1N5555 LDS_0094-1651814.pdf
JAN1N5555
Hersteller: Microchip / Microsemi
ESD Suppressors / TVS Diodes 47.5V 32A Uni-Directional TVS
auf Bestellung 38 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
1+106.68 EUR
10+ 106.65 EUR
25+ 106.63 EUR
100+ 99.03 EUR
JANS1N5552 LDS_0230-1592115.pdf
JANS1N5552
Hersteller: Microchip / Microsemi
Rectifiers 600 V Std Rectifier
auf Bestellung 10 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
1+183.14 EUR
100+ 170.07 EUR
JANTX1N5550 11519-lds-0230-datasheet
JANTX1N5550
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 5A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/420
auf Bestellung 89 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.79 EUR
Mindestbestellmenge: 2
JANTX1N5550 LDS_0230-1592115.pdf
JANTX1N5550
Hersteller: Microchip / Microsemi
Rectifiers 200 V Std Rectifier
auf Bestellung 232 Stücke:
Lieferzeit 182-196 Tag (e)
Anzahl Preis ohne MwSt
4+14.69 EUR
25+ 14.66 EUR
100+ 13.83 EUR
Mindestbestellmenge: 4
JANTX1N5551 LDS_0230-1592115.pdf
JANTX1N5551
Hersteller: Microchip / Microsemi
Rectifiers 400 V Std Rectifier
auf Bestellung 165 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.95 EUR
100+ 13.88 EUR
250+ 13.6 EUR
Mindestbestellmenge: 4
JANTX1N5551US 10966-sa7-43-datasheet
JANTX1N5551US
Hersteller: Microchip / Microsemi
Rectifiers 400 V Std Rectifier
auf Bestellung 666 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+22.7 EUR
10+ 22.67 EUR
100+ 21.53 EUR
500+ 21.09 EUR
Mindestbestellmenge: 3
JANTX1N5551US 10966-sa7-43-datasheet
JANTX1N5551US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 5A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
auf Bestellung 37 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+22.54 EUR
Mindestbestellmenge: 2
JANTX1N5552 11519-lds-0230-datasheet
JANTX1N5552
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 5A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/420
auf Bestellung 39 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13.29 EUR
Mindestbestellmenge: 2
JANTX1N5552 LDS_0230-1592115.pdf
JANTX1N5552
Hersteller: Microchip / Microsemi
Rectifiers 600 V Std Rectifier
auf Bestellung 4015 Stücke:
Lieferzeit 182-196 Tag (e)
Anzahl Preis ohne MwSt
4+13.36 EUR
100+ 12.43 EUR
Mindestbestellmenge: 4
JANTX1N5552US 10966-sa7-43-datasheet vleUsHb68.FCDqQHUe4L8QjGXawM1c89FiGabW6AFo8
JANTX1N5552US
Hersteller: Microchip / Microsemi
Rectifiers 600 V Std Rectifier
auf Bestellung 44 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+22.75 EUR
10+ 22.52 EUR
25+ 22.41 EUR
100+ 22.15 EUR
Mindestbestellmenge: 3
JANTX1N5553 LDS_0230-1592115.pdf
JANTX1N5553
Hersteller: Microchip / Microsemi
Rectifiers 800 V Std Rectifier
auf Bestellung 822 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+16.74 EUR
25+ 16.61 EUR
100+ 16.2 EUR
Mindestbestellmenge: 4
JANTX1N5553 11519-lds-0230-datasheet
JANTX1N5553
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 5A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: MIL-PRF-19500/420
auf Bestellung 37 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+17.32 EUR
Mindestbestellmenge: 2
JANTX1N5554 LDS_0230-1592115.pdf
JANTX1N5554
Hersteller: Microchip / Microsemi
Rectifiers 1000 V Std Rectifier
auf Bestellung 576 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+18.51 EUR
100+ 17.21 EUR
Mindestbestellmenge: 3
JANTX1N5554 11519-lds-0230-datasheet
JANTX1N5554
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 5A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Qualification: MIL-PRF-19500/420
auf Bestellung 89 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+18.38 EUR
Mindestbestellmenge: 2
JANTX1N5555 LDS_0094-1651814.pdf
JANTX1N5555
Hersteller: Microchip / Microsemi
ESD Suppressors / TVS Diodes 47.5V 32A Uni-Directional TVS
auf Bestellung 96 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
1+134.06 EUR
10+ 133.15 EUR
25+ 132.86 EUR
100+ 132.03 EUR
JANTX1N5555 8920-lds-0094-datasheet
JANTX1N5555
Hersteller: Microchip Technology
Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13 (DO-202AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500/500
auf Bestellung 95 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+141.18 EUR
JANTX1N5556 LDS_0094-1651814.pdf
JANTX1N5556
Hersteller: Microchip / Microsemi
ESD Suppressors / TVS Diodes 63.5V 24A Uni-Directional TVS
auf Bestellung 141 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
1+142.19 EUR
10+ 142.17 EUR
25+ 142.14 EUR
100+ 134.68 EUR
250+ 132.03 EUR
JANTX1N5557 LDS_0094-1651814.pdf
JANTX1N5557
Hersteller: Microchip / Microsemi
ESD Suppressors / TVS Diodes 78.5V 19A Uni-Directional TVS
auf Bestellung 45 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
1+101.58 EUR
10+ 101.56 EUR
25+ 101.5 EUR
100+ 94.3 EUR
JANTXV1N5552 LDS_0230-1592115.pdf
JANTXV1N5552
Hersteller: Microchip / Microsemi
Rectifiers 600 V Std Rectifier
auf Bestellung 464 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+38.56 EUR
100+ 35.8 EUR
Mindestbestellmenge: 2
SN5-5501 KEM_LF0057_SN.pdf
SN5-5501
Hersteller: KEMET
Category: Vertical inductors
Description: Inductor: wire; THT; 80uH; 1A; 200uΩ; -25÷105°C
Mounting: THT
Operating temperature: -25...105°C
Operating current: 1A
Resistance: 200µΩ
Type of inductor: wire
Inductance: 80µH
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
35+2.09 EUR
48+ 1.51 EUR
63+ 1.15 EUR
66+ 1.09 EUR
Mindestbestellmenge: 35
SN5-5501 KEM_LF0057_SN-3316903.pdf
SN5-5501
Hersteller: KEMET
Common Mode Chokes / Filters 80uH 1A DCR=200mOhms
auf Bestellung 278 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
16+3.25 EUR
19+ 2.78 EUR
100+ 1.98 EUR
Mindestbestellmenge: 16
SN5-5501 KEM_LF0057_SN.pdf
SN5-5501
Hersteller: KEMET
Description: NMC 80.0UH 1.0A 0.2000 OHM TH
Packaging: Bulk
Package / Case: Vertical, No Base, 2 PC Pin
Filter Type: Power Line
Mounting Type: Through Hole
Number of Lines: 2
Operating Temperature: -25°C ~ 105°C
Part Status: Active
Inductance @ Frequency: 80 µH @ 100 kHz
auf Bestellung 191 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.22 EUR
10+ 2.74 EUR
25+ 2.53 EUR
50+ 2.26 EUR
100+ 1.89 EUR
Mindestbestellmenge: 9
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