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STW75N60DM6 STMicroelectronics stw75n60dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
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MJD45H11T4 MJD45H11T4 STMicroelectronics MJD44H11_MJD45H11.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 862 Stücke:
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59+1.22 EUR
95+0.76 EUR
137+0.52 EUR
500+0.4 EUR
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STP110N10F7 STP110N10F7 STMicroelectronics en.DM00072347.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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24+3.06 EUR
28+2.6 EUR
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TS914IDT TS914IDT STMicroelectronics ts914.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
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18+3.98 EUR
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TS914ID TS914ID STMicroelectronics ts914.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 12mV
Input bias current: 0.3nA
Input offset current: 0.2nA
Quiescent current: 400µA
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TS914AIDT TS914AIDT STMicroelectronics ts914a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
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TS914AID TS914AID STMicroelectronics ts914a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
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TS914AIYDT TS914AIYDT STMicroelectronics ts914a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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TS914IYDT TS914IYDT STMicroelectronics ts914.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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BTB04-600SL BTB04-600SL STMicroelectronics BTB04-600SL-STMicroelectronics.pdf description Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Features of semiconductor devices: lighting application
Mounting: THT
Kind of package: tube
auf Bestellung 394 Stücke:
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55+1.32 EUR
78+0.93 EUR
88+0.82 EUR
115+0.63 EUR
127+0.56 EUR
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STP16N65M2 STMicroelectronics en.DM00140964.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 44A
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STW56N65M2-4 STMicroelectronics stw56n65m2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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STD16N65M2 STMicroelectronics en.DM00140850.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19.5nC
Produkt ist nicht verfügbar
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STH315N10F7-2 STMicroelectronics sth315n10f7-2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
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STH315N10F7-6 STMicroelectronics sth315n10f7-2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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STP200N3LL STP200N3LL STMicroelectronics en.DM00255610.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 2.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 176.5W
Pulsed drain current: 480A
Case: TO220-3
Kind of package: tube
auf Bestellung 153 Stücke:
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41+1.77 EUR
64+1.13 EUR
72+1 EUR
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STWA70N65DM6 STWA70N65DM6 STMicroelectronics stwa70n65dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43A
Pulsed drain current: 260A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhancement
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LM833DT LM833DT STMicroelectronics LM833DT.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
auf Bestellung 3590 Stücke:
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179+0.4 EUR
216+0.33 EUR
242+0.3 EUR
274+0.26 EUR
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MC1458IDT MC1458IDT STMicroelectronics MC1458ID.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Quiescent current: 2.3mA
Slew rate: 0.8V/μs
Operating temperature: -40...105°C
Input offset current: 300nA
Input bias current: 0.8µA
auf Bestellung 3374 Stücke:
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167+0.43 EUR
190+0.38 EUR
206+0.35 EUR
233+0.31 EUR
275+0.26 EUR
302+0.24 EUR
500+0.23 EUR
1000+0.22 EUR
2500+0.21 EUR
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MC1458DT MC1458DT STMicroelectronics mc1458.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Quiescent current: 2.3mA
Slew rate: 0.8V/μs
Operating temperature: 0...70°C
Input offset current: 300nA
Input bias current: 0.8µA
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25+2.86 EUR
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LD39150PT-R LD39150PT-R STMicroelectronics ld39150.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
auf Bestellung 2449 Stücke:
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59+1.23 EUR
81+0.89 EUR
89+0.81 EUR
100+0.72 EUR
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LD39150PU-R STMicroelectronics ld39150.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
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LD39150PU33R STMicroelectronics ld39150.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1.5A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
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STF4N80K5 STF4N80K5 STMicroelectronics en.DM00092669.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 62 Stücke:
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36+1.99 EUR
52+1.4 EUR
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STP4N80K5 STP4N80K5 STMicroelectronics en.DM00092669.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
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STL4N80K5 STMicroelectronics en.DM00101054.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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STD4N80K5 STMicroelectronics std4n80k5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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STU4N80K5 STMicroelectronics en.DM00092669.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
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STP14N80K5 STMicroelectronics STP14N80K5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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STM32L052K8U6 STMicroelectronics en.DM00108217.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x3; USART x2; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 12bit D/A converters: 1
Number of 16bit timers: 5
Family: STM32L0
Kind of core: 32-bit
Kind of package: in-tray
auf Bestellung 210 Stücke:
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28+2.63 EUR
34+2.16 EUR
35+2.07 EUR
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STM8S207K8T6C STMicroelectronics en.CD00197787.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Interface: I2C; IrDA; SPI; UART
Clock frequency: 24MHz
Mounting: SMD
Family: STM8S
Type of integrated circuit: STM8 microcontroller
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH
Case: LQFP32
Kind of core: 8-bit
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STM8L152C8U6 STMicroelectronics en.CD00284933.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN48; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: UFQFPN48
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI x2; USART x2
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 2kB EEPROM; 4kB RAM; 64kB FLASH
Number of 12bit A/D converters: 28
Number of 12bit D/A converters: 2
Number of 16bit timers: 4
Number of 8bit timers: 1
Number of PWM channels: 5
Family: STM8L
Kind of core: 8-bit
Number of comparators: 2
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ACS120-7SB-TR ACS120-7SB-TR STMicroelectronics ACS120-7SB.pdf Category: Thyristors - others
Description: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™
Type of thyristor: AC switch
Max. load current: 2A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Number of switches: 1
Max. off-state voltage: 700V
Technology: ASD™
Features of semiconductor devices: internally triggered
auf Bestellung 499 Stücke:
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40+1.79 EUR
66+1.09 EUR
100+0.93 EUR
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M24C08-RMN6TP M24C08-RMN6TP STMicroelectronics M24C08-RDW6TP.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8
Interface: I2C
Memory: 8kb EEPROM
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Memory organisation: 1kx8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
auf Bestellung 3137 Stücke:
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358+0.2 EUR
391+0.18 EUR
2500+0.15 EUR
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M24C08-RDW6TP M24C08-RDW6TP STMicroelectronics M24C08-RDW6TP.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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M24C08-FMN6TP M24C08-FMN6TP STMicroelectronics m24c08-f.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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M24C08-RMC6TG STMicroelectronics m24c08-f.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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M24C08-FDW6TP STMicroelectronics m24c08-f.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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M24C08-FMC6TG STMicroelectronics m24c08-f.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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M24C08-WDW6TP STMicroelectronics en.DM00070057.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kBEEPROM; I2C; 1kx8bit; TSSOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kB EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.11 EUR
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STPS30L60CT STPS30L60CT STMicroelectronics stps30l60c.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 130mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Produkt ist nicht verfügbar
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STWD100NYWY3F STWD100NYWY3F STMicroelectronics STWD100.pdf Category: Watchdog and reset circuits
Description: IC: peripheral circuit; timer; open drain; 2.7÷5.5VDC; SOT23-5
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
DC supply current: 13µA
Mounting: SMD
Operating temperature: -40...85°C
Integrated circuit features: watchdog
auf Bestellung 9579 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
112+0.64 EUR
128+0.56 EUR
131+0.55 EUR
250+0.52 EUR
500+0.49 EUR
1000+0.48 EUR
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BTA10-600CRG BTA10-600CRG STMicroelectronics BTA10-600BRG-STMicroelectronics.pdf Category: Triacs
Description: Triac; 600V; 10A; TO220ABIns; Igt: 25mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220ABIns
Gate current: 25mA
Mounting: THT
Kind of package: tube
auf Bestellung 192 Stücke:
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42+1.72 EUR
77+0.94 EUR
93+0.78 EUR
100+0.72 EUR
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BTA10-800BWRG BTA10-800BWRG STMicroelectronics BTA10-600BRG-STMicroelectronics.pdf Category: Triacs
Description: Triac; 800V; 10A; TO220ABIns; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220ABIns
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
auf Bestellung 87 Stücke:
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46+1.56 EUR
71+1.02 EUR
87+0.82 EUR
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1.5KE56A 1.5KE56A STMicroelectronics 1.5KE100A.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 56V; 19.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
auf Bestellung 739 Stücke:
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100+0.72 EUR
112+0.64 EUR
129+0.55 EUR
250+0.47 EUR
300+0.46 EUR
500+0.42 EUR
600+0.41 EUR
Mindestbestellmenge: 100
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T1635H-6T T1635H-6T STMicroelectronics T1635H-6T.pdf Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 0.168kA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
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35+2.09 EUR
37+1.93 EUR
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STM32F070CBT6 STM32F070CBT6 STMicroelectronics STM32F070C6T6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP48; 2.4÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 2.4...3.6V DC
Interface: I2C x2; SPI x2; UART x4; USB
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Family: STM32F0
Kind of core: 32-bit
Number of 16bit timers: 8
auf Bestellung 211 Stücke:
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24+3 EUR
27+2.69 EUR
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STB18N60M2 STMicroelectronics en.DM00086800.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 110W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 110W
Case: D2PAK; TO263
On-state resistance: 255mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSV6393AIST STMicroelectronics tsv6393a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.4MHz; Ch: 2; 1.5÷5.5VDC; MSOP10; 2.2mV
Type of integrated circuit: operational amplifier
Bandwidth: 2.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 1.5...5.5V DC
Case: MSOP10
Operating temperature: -40...125°C
Slew rate: 1.1V/μs
Integrated circuit features: micropower; rail-to-rail
Quiescent current: 72µA
Input offset voltage: 2.2mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Produkt ist nicht verfügbar
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X-NUCLEO-IHM14A1 X-NUCLEO-IHM14A1 STMicroelectronics X-NUCLEO-IHM14A1.pdf Category: Add-on boards
Description: Expansion board; Comp: STSPIN820; 7÷45VDC
Type of accessories for development kits: expansion board
Components: STSPIN820
Associated circuits: STM32
Interface: GPIO
Connection: pin strips; screw terminal
development kits accessories features: stepper motor driver
Supply voltage: 7...45V DC
auf Bestellung 1 Stücke:
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1+71.5 EUR
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STGF10NC60KD STGF10NC60KD STMicroelectronics en.CD00058414.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
51+1.42 EUR
64+1.13 EUR
87+0.82 EUR
100+0.77 EUR
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STGW80H65DFB STGW80H65DFB STMicroelectronics stgw80h65dfb.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 80A
Gate-emitter voltage: ±20V
Power dissipation: 470W
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 414nC
auf Bestellung 116 Stücke:
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17+4.4 EUR
20+3.69 EUR
30+3.66 EUR
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STD16N50M2 STMicroelectronics en.DM00124257.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STF16N50M2 STMicroelectronics en.DM00124257.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STP20N90K5 STP20N90K5 STMicroelectronics STP20N90K5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 40nC
Produkt ist nicht verfügbar
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L9613B013TR L9613B013TR STMicroelectronics en.CD00001941.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; reel,tape
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: interface
ISO standard: ISO 9141
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: transceiver
Supply voltage: 4.8...18V DC
Interface: Bus
auf Bestellung 1344 Stücke:
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36+1.99 EUR
49+1.47 EUR
50+1.43 EUR
Mindestbestellmenge: 36
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L9613B L9613B STMicroelectronics L9613B.pdf Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; tube
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: interface
ISO standard: ISO 9141
Kind of package: tube
Case: SO8
Kind of integrated circuit: transceiver
Supply voltage: 4.8...18V DC
Interface: Bus
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.26 EUR
33+2.19 EUR
36+1.99 EUR
50+1.84 EUR
100+1.7 EUR
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1.5KE36CA 1.5KE36CA STMicroelectronics 1.5KE100A.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30A; bidirectional; DO201; Ammo Pack; 1.5kW
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
auf Bestellung 2348 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
133+0.54 EUR
145+0.5 EUR
166+0.43 EUR
600+0.35 EUR
1200+0.33 EUR
1800+0.31 EUR
Mindestbestellmenge: 105
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STTH8R06D STTH8R06D STMicroelectronics stth8r06.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Max. load current: 30A
Reverse recovery time: 25ns
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Type of diode: rectifying
auf Bestellung 318 Stücke:
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54+1.33 EUR
73+0.98 EUR
90+0.8 EUR
117+0.61 EUR
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STTH8R06G-TR STTH8R06G-TR STMicroelectronics stth8r06.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 25ns; D2PAK; Ufmax: 1.4V; Ifsm: 80A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 1.4V
Load current: 8A
Max. forward impulse current: 80A
Max. off-state voltage: 0.6kV
Case: D2PAK
Mounting: SMD
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
72+1 EUR
81+0.89 EUR
93+0.77 EUR
100+0.72 EUR
200+0.66 EUR
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STW75N60DM6 stw75n60dm6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MJD45H11T4 MJD44H11_MJD45H11.pdf
MJD45H11T4
Hersteller: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 862 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
95+0.76 EUR
137+0.52 EUR
500+0.4 EUR
Mindestbestellmenge: 59
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STP110N10F7 en.DM00072347.pdf
STP110N10F7
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.06 EUR
28+2.6 EUR
Mindestbestellmenge: 24
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TS914IDT ts914.pdf
TS914IDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 18 Stücke:
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Anzahl Preis
18+3.98 EUR
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TS914ID ts914.pdf
TS914ID
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 12mV
Input bias current: 0.3nA
Input offset current: 0.2nA
Quiescent current: 400µA
Produkt ist nicht verfügbar
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TS914AIDT ts914a.pdf
TS914AIDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Produkt ist nicht verfügbar
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TS914AID ts914a.pdf
TS914AID
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Produkt ist nicht verfügbar
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TS914AIYDT ts914a.pdf
TS914AIYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS914IYDT ts914.pdf
TS914IYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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BTB04-600SL description BTB04-600SL-STMicroelectronics.pdf
BTB04-600SL
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Features of semiconductor devices: lighting application
Mounting: THT
Kind of package: tube
auf Bestellung 394 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
78+0.93 EUR
88+0.82 EUR
115+0.63 EUR
127+0.56 EUR
Mindestbestellmenge: 55
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STP16N65M2 en.DM00140964.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 44A
Produkt ist nicht verfügbar
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STW56N65M2-4 stw56n65m2-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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STD16N65M2 en.DM00140850.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 19.5nC
Produkt ist nicht verfügbar
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STH315N10F7-2 sth315n10f7-2.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Produkt ist nicht verfügbar
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STH315N10F7-6 sth315n10f7-2.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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STP200N3LL en.DM00255610.pdf
STP200N3LL
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 53nC
On-state resistance: 2.4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 176.5W
Pulsed drain current: 480A
Case: TO220-3
Kind of package: tube
auf Bestellung 153 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
64+1.13 EUR
72+1 EUR
100+0.94 EUR
Mindestbestellmenge: 41
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STWA70N65DM6 stwa70n65dm6.pdf
STWA70N65DM6
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43A
Pulsed drain current: 260A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LM833DT LM833DT.pdf
LM833DT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
auf Bestellung 3590 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
216+0.33 EUR
242+0.3 EUR
274+0.26 EUR
Mindestbestellmenge: 179
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MC1458IDT MC1458ID.pdf
MC1458IDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Quiescent current: 2.3mA
Slew rate: 0.8V/μs
Operating temperature: -40...105°C
Input offset current: 300nA
Input bias current: 0.8µA
auf Bestellung 3374 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
190+0.38 EUR
206+0.35 EUR
233+0.31 EUR
275+0.26 EUR
302+0.24 EUR
500+0.23 EUR
1000+0.22 EUR
2500+0.21 EUR
Mindestbestellmenge: 167
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MC1458DT mc1458.pdf
MC1458DT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Quiescent current: 2.3mA
Slew rate: 0.8V/μs
Operating temperature: 0...70°C
Input offset current: 300nA
Input bias current: 0.8µA
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
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LD39150PT-R ld39150.pdf
LD39150PT-R
Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
auf Bestellung 2449 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
81+0.89 EUR
89+0.81 EUR
100+0.72 EUR
250+0.7 EUR
Mindestbestellmenge: 59
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LD39150PU-R ld39150.pdf
Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
Produkt ist nicht verfügbar
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LD39150PU33R ld39150.pdf
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1.5A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
Produkt ist nicht verfügbar
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STF4N80K5 en.DM00092669.pdf
STF4N80K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
52+1.4 EUR
62+1.16 EUR
Mindestbestellmenge: 36
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STP4N80K5 en.DM00092669.pdf
STP4N80K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STL4N80K5 en.DM00101054.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STD4N80K5 std4n80k5.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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STU4N80K5 en.DM00092669.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STP14N80K5 STP14N80K5.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STM32L052K8U6 en.DM00108217.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x3; USART x2; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 12bit D/A converters: 1
Number of 16bit timers: 5
Family: STM32L0
Kind of core: 32-bit
Kind of package: in-tray
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.76 EUR
28+2.63 EUR
34+2.16 EUR
35+2.07 EUR
Mindestbestellmenge: 26
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STM8S207K8T6C en.CD00197787.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Interface: I2C; IrDA; SPI; UART
Clock frequency: 24MHz
Mounting: SMD
Family: STM8S
Type of integrated circuit: STM8 microcontroller
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH
Case: LQFP32
Kind of core: 8-bit
Produkt ist nicht verfügbar
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STM8L152C8U6 en.CD00284933.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN48; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: UFQFPN48
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI x2; USART x2
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 2kB EEPROM; 4kB RAM; 64kB FLASH
Number of 12bit A/D converters: 28
Number of 12bit D/A converters: 2
Number of 16bit timers: 4
Number of 8bit timers: 1
Number of PWM channels: 5
Family: STM8L
Kind of core: 8-bit
Number of comparators: 2
Produkt ist nicht verfügbar
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ACS120-7SB-TR ACS120-7SB.pdf
ACS120-7SB-TR
Hersteller: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™
Type of thyristor: AC switch
Max. load current: 2A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Number of switches: 1
Max. off-state voltage: 700V
Technology: ASD™
Features of semiconductor devices: internally triggered
auf Bestellung 499 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
66+1.09 EUR
100+0.93 EUR
Mindestbestellmenge: 40
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M24C08-RMN6TP M24C08-RDW6TP.pdf
M24C08-RMN6TP
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8
Interface: I2C
Memory: 8kb EEPROM
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Memory organisation: 1kx8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
auf Bestellung 3137 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
391+0.18 EUR
2500+0.15 EUR
Mindestbestellmenge: 358
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M24C08-RDW6TP M24C08-RDW6TP.pdf
M24C08-RDW6TP
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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M24C08-FMN6TP m24c08-f.pdf
M24C08-FMN6TP
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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M24C08-RMC6TG m24c08-f.pdf
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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M24C08-FDW6TP m24c08-f.pdf
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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M24C08-FMC6TG m24c08-f.pdf
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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M24C08-WDW6TP en.DM00070057.pdf
Hersteller: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kBEEPROM; I2C; 1kx8bit; TSSOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kB EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.11 EUR
Mindestbestellmenge: 4000
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STPS30L60CT stps30l60c.pdf
STPS30L60CT
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.75V
Max. load current: 30A
Max. forward impulse current: 230A
Leakage current: 130mA
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Produkt ist nicht verfügbar
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STWD100NYWY3F STWD100.pdf
STWD100NYWY3F
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: peripheral circuit; timer; open drain; 2.7÷5.5VDC; SOT23-5
Type of integrated circuit: peripheral circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
DC supply current: 13µA
Mounting: SMD
Operating temperature: -40...85°C
Integrated circuit features: watchdog
auf Bestellung 9579 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
112+0.64 EUR
128+0.56 EUR
131+0.55 EUR
250+0.52 EUR
500+0.49 EUR
1000+0.48 EUR
Mindestbestellmenge: 107
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BTA10-600CRG BTA10-600BRG-STMicroelectronics.pdf
BTA10-600CRG
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 10A; TO220ABIns; Igt: 25mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 10A
Case: TO220ABIns
Gate current: 25mA
Mounting: THT
Kind of package: tube
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
77+0.94 EUR
93+0.78 EUR
100+0.72 EUR
Mindestbestellmenge: 42
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BTA10-800BWRG BTA10-600BRG-STMicroelectronics.pdf
BTA10-800BWRG
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 10A; TO220ABIns; Igt: 50mA; Snubberless™
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 10A
Case: TO220ABIns
Gate current: 50mA
Mounting: THT
Kind of package: tube
Technology: Snubberless™
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
71+1.02 EUR
87+0.82 EUR
Mindestbestellmenge: 46
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1.5KE56A 1.5KE100A.pdf
1.5KE56A
Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 56V; 19.5A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 47.8V
Breakdown voltage: 56V
Max. forward impulse current: 19.5A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
auf Bestellung 739 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
112+0.64 EUR
129+0.55 EUR
250+0.47 EUR
300+0.46 EUR
500+0.42 EUR
600+0.41 EUR
Mindestbestellmenge: 100
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T1635H-6T T1635H-6T.pdf
T1635H-6T
Hersteller: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 16A; TO220AB; Igt: 35mA; Ifsm: 168A; high temperature
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 16A
Case: TO220AB
Gate current: 35mA
Max. forward impulse current: 0.168kA
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.09 EUR
37+1.93 EUR
Mindestbestellmenge: 35
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STM32F070CBT6 STM32F070C6T6.pdf
STM32F070CBT6
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; LQFP48; 2.4÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 2.4...3.6V DC
Interface: I2C x2; SPI x2; UART x4; USB
Kind of architecture: Cortex M0
Memory: 16kB SRAM; 128kB FLASH
Family: STM32F0
Kind of core: 32-bit
Number of 16bit timers: 8
auf Bestellung 211 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3 EUR
27+2.69 EUR
Mindestbestellmenge: 24
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STB18N60M2 en.DM00086800.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 110W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 110W
Case: D2PAK; TO263
On-state resistance: 255mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSV6393AIST tsv6393a.pdf
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.4MHz; Ch: 2; 1.5÷5.5VDC; MSOP10; 2.2mV
Type of integrated circuit: operational amplifier
Bandwidth: 2.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 1.5...5.5V DC
Case: MSOP10
Operating temperature: -40...125°C
Slew rate: 1.1V/μs
Integrated circuit features: micropower; rail-to-rail
Quiescent current: 72µA
Input offset voltage: 2.2mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Produkt ist nicht verfügbar
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X-NUCLEO-IHM14A1 X-NUCLEO-IHM14A1.pdf
X-NUCLEO-IHM14A1
Hersteller: STMicroelectronics
Category: Add-on boards
Description: Expansion board; Comp: STSPIN820; 7÷45VDC
Type of accessories for development kits: expansion board
Components: STSPIN820
Associated circuits: STM32
Interface: GPIO
Connection: pin strips; screw terminal
development kits accessories features: stepper motor driver
Supply voltage: 7...45V DC
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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STGF10NC60KD en.CD00058414.pdf
STGF10NC60KD
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 25W; TO220FP
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 19nC
Kind of package: tube
auf Bestellung 636 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
51+1.42 EUR
64+1.13 EUR
87+0.82 EUR
100+0.77 EUR
Mindestbestellmenge: 45
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STGW80H65DFB stgw80h65dfb.pdf
STGW80H65DFB
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 470W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Collector current: 80A
Gate-emitter voltage: ±20V
Power dissipation: 470W
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 414nC
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.4 EUR
20+3.69 EUR
30+3.66 EUR
Mindestbestellmenge: 17
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STD16N50M2 en.DM00124257.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STF16N50M2 en.DM00124257.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STP20N90K5 STP20N90K5.pdf
STP20N90K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 13A; Idm: 80A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 40nC
Produkt ist nicht verfügbar
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L9613B013TR en.CD00001941.pdf
L9613B013TR
Hersteller: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; reel,tape
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: interface
ISO standard: ISO 9141
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: transceiver
Supply voltage: 4.8...18V DC
Interface: Bus
auf Bestellung 1344 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
49+1.47 EUR
50+1.43 EUR
Mindestbestellmenge: 36
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L9613B L9613B.pdf
L9613B
Hersteller: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.8÷18VDC; Bus; SMD; SO8; tube
Operating temperature: -40...150°C
Mounting: SMD
Type of integrated circuit: interface
ISO standard: ISO 9141
Kind of package: tube
Case: SO8
Kind of integrated circuit: transceiver
Supply voltage: 4.8...18V DC
Interface: Bus
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.26 EUR
33+2.19 EUR
36+1.99 EUR
50+1.84 EUR
100+1.7 EUR
Mindestbestellmenge: 22
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1.5KE36CA 1.5KE100A.pdf
1.5KE36CA
Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30A; bidirectional; DO201; Ammo Pack; 1.5kW
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
auf Bestellung 2348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
133+0.54 EUR
145+0.5 EUR
166+0.43 EUR
600+0.35 EUR
1200+0.33 EUR
1800+0.31 EUR
Mindestbestellmenge: 105
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STTH8R06D description stth8r06.pdf
STTH8R06D
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 80A; TO220AC; 25ns
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Load current: 8A
Case: TO220AC
Max. forward voltage: 1.4V
Max. forward impulse current: 80A
Max. load current: 30A
Reverse recovery time: 25ns
Kind of package: tube
Mounting: THT
Features of semiconductor devices: ultrafast switching
Heatsink thickness: 1.23...1.32mm
Type of diode: rectifying
auf Bestellung 318 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
73+0.98 EUR
90+0.8 EUR
117+0.61 EUR
Mindestbestellmenge: 54
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STTH8R06G-TR stth8r06.pdf
STTH8R06G-TR
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 25ns; D2PAK; Ufmax: 1.4V; Ifsm: 80A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 25ns
Max. forward voltage: 1.4V
Load current: 8A
Max. forward impulse current: 80A
Max. off-state voltage: 0.6kV
Case: D2PAK
Mounting: SMD
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
72+1 EUR
81+0.89 EUR
93+0.77 EUR
100+0.72 EUR
200+0.66 EUR
Mindestbestellmenge: 72
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