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1N5418TR 1N5418TR Vishay General Semiconductor - Diodes Division 1n5417.pdf Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 20803 Stücke:
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100+1.06 EUR
500+0.87 EUR
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1N5624-TR 1N5624-TR Vishay General Semiconductor - Diodes Division 1n5624.pdf Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 14579 Stücke:
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1N5625-TR 1N5625-TR Vishay General Semiconductor - Diodes Division 1n5624.pdf Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 8869 Stücke:
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1N5626-TR 1N5626-TR Vishay General Semiconductor - Diodes Division 1n5624.pdf Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 4852 Stücke:
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1N5627-TR 1N5627-TR Vishay General Semiconductor - Diodes Division 1n5624.pdf Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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BAT42-TR BAT42-TR Vishay General Semiconductor - Diodes Division bat42.pdf Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
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BAT46-TR BAT46-TR Vishay General Semiconductor - Diodes Division bat46.pdf Description: DIODE SCHOTTK 100V 150MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 42199 Stücke:
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106+0.17 EUR
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BAT85S-TAP BAT85S-TAP Vishay General Semiconductor - Diodes Division bat85s.pdf Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 1765 Stücke:
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120+0.15 EUR
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BAT85S-TR BAT85S-TR Vishay General Semiconductor - Diodes Division bat85s.pdf Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 41593 Stücke:
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5000+0.09 EUR
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BAV21-TR BAV21-TR Vishay General Semiconductor - Diodes Division bav17.pdf Description: DIODE STD 200V 250MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 49950 Stücke:
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91+0.19 EUR
127+0.14 EUR
155+0.11 EUR
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5000+0.06 EUR
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BY203-20STR BY203-20STR Vishay General Semiconductor - Diodes Division by20312s.pdf Description: DIODE AVAL 2000V 250MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 67595 Stücke:
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BY228TR BY228TR Vishay General Semiconductor - Diodes Division by228.pdf Description: DIODE AVALANCHE 1500V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
auf Bestellung 7717 Stücke:
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BY269TR BY269TR Vishay General Semiconductor - Diodes Division by268.pdf Description: DIODE AVAL 1600V 800MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Avalanche
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
auf Bestellung 37862 Stücke:
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19+0.95 EUR
25+0.72 EUR
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BY448TR BY448TR Vishay General Semiconductor - Diodes Division by448.pdf Description: DIODE AVALANCHE 1500V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
auf Bestellung 32058 Stücke:
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19+0.97 EUR
26+0.69 EUR
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500+0.50 EUR
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BYT56M-TR BYT56M-TR Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 40081 Stücke:
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BYT78-TR BYT78-TR Vishay General Semiconductor - Diodes Division byt77.pdf Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 13443 Stücke:
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10+1.80 EUR
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BYV26B-TR BYV26B-TR Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 13741 Stücke:
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BYV26C-TAP BYV26C-TAP Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 600V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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BYV26E-TAP BYV26E-TAP Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 1KV 1A SOD 57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 6797 Stücke:
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13+1.36 EUR
19+0.97 EUR
100+0.72 EUR
500+0.56 EUR
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BYV26E-TR BYV26E-TR Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 1KV 1A SOD 57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 34729 Stücke:
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BYV27-100-TAP BYV27-100-TAP Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 100V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 2166 Stücke:
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14+1.32 EUR
18+1.01 EUR
100+0.71 EUR
500+0.59 EUR
1000+0.51 EUR
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BYV27-100-TR BYV27-100-TR Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 100V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 27397 Stücke:
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23+0.77 EUR
29+0.61 EUR
100+0.58 EUR
500+0.50 EUR
1000+0.46 EUR
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BYV27-200-TAP BYV27-200-TAP Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 894 Stücke:
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12+1.48 EUR
17+1.07 EUR
100+0.78 EUR
500+0.60 EUR
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BYV27-200-TR BYV27-200-TR Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 23679 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
17+1.07 EUR
100+0.78 EUR
500+0.60 EUR
1000+0.55 EUR
2000+0.50 EUR
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BYV28-150-TR BYV28-150-TR Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 6337 Stücke:
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BYV28-200-TAP BYV28-200-TAP Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 200V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 1596 Stücke:
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BYV28-600-TR BYV28-600-TR Vishay General Semiconductor - Diodes Division byv28600.pdf Description: DIODE AVALANCHE 600V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 9557 Stücke:
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BYV98-200-TR BYV98-200-TR Vishay General Semiconductor - Diodes Division byv98.pdf Description: DIODE AVALANCHE 200V 4A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 8645 Stücke:
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BYW36-TR BYW36-TR Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 16969 Stücke:
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17+1.06 EUR
23+0.79 EUR
100+0.72 EUR
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1000+0.41 EUR
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BYW54-TR BYW54-TR Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 18958 Stücke:
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BYW56-TR BYW56-TR Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 25182 Stücke:
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23+0.77 EUR
30+0.60 EUR
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BZX55C12-TR BZX55C12-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14466 Stücke:
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77+0.23 EUR
113+0.16 EUR
309+0.06 EUR
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BZX55C3V3-TR BZX55C3V3-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5545 Stücke:
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112+0.16 EUR
334+0.05 EUR
367+0.05 EUR
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BZX85C15-TAP BZX85C15-TAP Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 15V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8460 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
94+0.19 EUR
194+0.09 EUR
500+0.09 EUR
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BZX85C27-TAP BZX85C27-TAP Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 27V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10124 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
86+0.21 EUR
185+0.10 EUR
500+0.09 EUR
1000+0.09 EUR
2000+0.09 EUR
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SD101A-TR SD101A-TR Vishay General Semiconductor - Diodes Division sd101abc.pdf Description: DIODE SCHOTTKY 60V 30MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
auf Bestellung 23508 Stücke:
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59+0.30 EUR
98+0.18 EUR
148+0.12 EUR
500+0.10 EUR
1000+0.08 EUR
2000+0.08 EUR
5000+0.08 EUR
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SD101C-TR SD101C-TR Vishay General Semiconductor - Diodes Division sd101abc.pdf Description: DIODE SCHOTTKY 40V 30MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
auf Bestellung 5827 Stücke:
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84+0.21 EUR
143+0.12 EUR
210+0.08 EUR
500+0.07 EUR
1000+0.07 EUR
2000+0.07 EUR
5000+0.07 EUR
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SD103A-TR SD103A-TR Vishay General Semiconductor - Diodes Division sd103a.pdf Description: DIODE SCHOTTKY 40V DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 52667 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
77+0.23 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.10 EUR
2000+0.10 EUR
5000+0.10 EUR
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SD103C-TR SD103C-TR Vishay General Semiconductor - Diodes Division sd103a.pdf Description: DIODE SCHOTTKY 20V DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
auf Bestellung 70720 Stücke:
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34+0.53 EUR
51+0.35 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.11 EUR
5000+0.09 EUR
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SF1600-TR SF1600-TR Vishay General Semiconductor - Diodes Division sf1200.pdf Description: DIODE AVALANCHE 1600V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1600
auf Bestellung 195 Stücke:
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19+0.97 EUR
22+0.83 EUR
100+0.68 EUR
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SF5408-TR SF5408-TR Vishay General Semiconductor - Diodes Division sf5400.pdf Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 9037 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.16 EUR
12+1.52 EUR
100+1.18 EUR
500+0.94 EUR
1000+0.85 EUR
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1N4148WS-E3-08 1N4148WS-E3-08 Vishay General Semiconductor - Diodes Division 1n4148ws.pdf Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 125718 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.19 EUR
127+0.14 EUR
150+0.12 EUR
500+0.09 EUR
1000+0.07 EUR
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1N4148W-E3-08 1N4148W-E3-08 Vishay General Semiconductor - Diodes Division 1n4148w.pdf Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 37742 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
100+0.18 EUR
150+0.12 EUR
500+0.09 EUR
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1N4148W-E3-18 1N4148W-E3-18 Vishay General Semiconductor - Diodes Division 1n4148w.pdf Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 132570 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
223+0.08 EUR
292+0.06 EUR
500+0.06 EUR
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1N4150W-E3-08 1N4150W-E3-08 Vishay General Semiconductor - Diodes Division 1n4150w.pdf Description: DIODE STANDARD 50V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 24901 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
120+0.15 EUR
134+0.13 EUR
500+0.10 EUR
1000+0.09 EUR
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AZ23C5V6-E3-18 AZ23C5V6-E3-18 Vishay General Semiconductor - Diodes Division az23_series.pdf Description: DIODE ZENER ARRAY 5.6V SOT23
Tolerance: ±7%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
auf Bestellung 5273 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
51+0.35 EUR
104+0.17 EUR
500+0.14 EUR
1000+0.10 EUR
2000+0.09 EUR
5000+0.08 EUR
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BAS16WS-E3-08 BAS16WS-E3-08 Vishay General Semiconductor - Diodes Division bas16ws.pdf Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 29534 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
124+0.14 EUR
157+0.11 EUR
500+0.08 EUR
1000+0.08 EUR
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BAS21-E3-08 BAS21-E3-08 Vishay General Semiconductor - Diodes Division bas19_bas20_bas21.pdf Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 26638 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
79+0.23 EUR
140+0.13 EUR
500+0.09 EUR
1000+0.07 EUR
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BAS40-00-E3-08 BAS40-00-E3-08 Vishay General Semiconductor - Diodes Division BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf Description: DIODE SCHOTTKY 40V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 15737 Stücke:
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BAS40-04-E3-08 BAS40-04-E3-08 Vishay General Semiconductor - Diodes Division BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 4699 Stücke:
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BAS40-05-E3-08 BAS40-05-E3-08 Vishay General Semiconductor - Diodes Division BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 34543 Stücke:
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BAS70-00-E3-08 BAS70-00-E3-08 Vishay General Semiconductor - Diodes Division BAS70-00_to_BAS70-06_Rev2.2_2-18-13.pdf Description: DIODE SCHOTTKY 70V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 115187 Stücke:
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BAS70-04-E3-08 BAS70-04-E3-08 Vishay General Semiconductor - Diodes Division BAS70-00_to_BAS70-06_Rev2.2_2-18-13.pdf Description: DIODE ARR SCHOTT 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 25090 Stücke:
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BAS70-05-E3-08 BAS70-05-E3-08 Vishay General Semiconductor - Diodes Division BAS70-00_to_BAS70-06_Rev2.2_2-18-13.pdf Description: DIODE ARR SCHOTT 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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BAS70-06-E3-08 BAS70-06-E3-08 Vishay General Semiconductor - Diodes Division BAS70-00_to_BAS70-06_Rev2.2_2-18-13.pdf Description: DIODE ARR SCHOTT 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 24403 Stücke:
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BAS85-GS08 BAS85-GS08 Vishay General Semiconductor - Diodes Division bas85.pdf Description: DIODE SCHOTTKY 30V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 12008 Stücke:
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BAT42W-E3-08 BAT42W-E3-08 Vishay General Semiconductor - Diodes Division bat42w.pdf Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 77294 Stücke:
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BAT46W-E3-08 BAT46W-E3-08 Vishay General Semiconductor - Diodes Division bat46w.pdf Description: DIODE SCHOTTKY 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 55348 Stücke:
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BAT54A-E3-08 BAT54A-E3-08 Vishay General Semiconductor - Diodes Division BAT54_A_C_S_Rev1.9_3-16-16.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 11615 Stücke:
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BAT54S-E3-08 BAT54S-E3-08 Vishay General Semiconductor - Diodes Division BAT54_A_C_S_Rev1.9_3-16-16.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 59698 Stücke:
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1N5418TR 1n5417.pdf
1N5418TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 20803 Stücke:
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12+1.57 EUR
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1N5624-TR 1n5624.pdf
1N5624-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 14579 Stücke:
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15+1.23 EUR
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1N5625-TR 1n5624.pdf
1N5625-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 8869 Stücke:
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1N5626-TR 1n5624.pdf
1N5626-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 4852 Stücke:
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7+2.55 EUR
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1N5627-TR 1n5624.pdf
1N5627-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 1854 Stücke:
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16+1.14 EUR
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BAT42-TR bat42.pdf
BAT42-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 42980 Stücke:
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Anzahl Preis
72+0.25 EUR
99+0.18 EUR
129+0.14 EUR
500+0.11 EUR
1000+0.09 EUR
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BAT46-TR bat46.pdf
BAT46-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 150MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 42199 Stücke:
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Anzahl Preis
63+0.28 EUR
106+0.17 EUR
140+0.13 EUR
500+0.10 EUR
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BAT85S-TAP bat85s.pdf
BAT85S-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 1765 Stücke:
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Anzahl Preis
67+0.26 EUR
105+0.17 EUR
120+0.15 EUR
500+0.11 EUR
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BAT85S-TR bat85s.pdf
BAT85S-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 41593 Stücke:
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40+0.44 EUR
65+0.27 EUR
104+0.17 EUR
500+0.13 EUR
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5000+0.09 EUR
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BAV21-TR bav17.pdf
BAV21-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 250MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 49950 Stücke:
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Anzahl Preis
91+0.19 EUR
127+0.14 EUR
155+0.11 EUR
500+0.08 EUR
1000+0.07 EUR
2000+0.07 EUR
5000+0.06 EUR
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BY203-20STR by20312s.pdf
BY203-20STR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 2000V 250MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 67595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
19+0.98 EUR
100+0.82 EUR
500+0.65 EUR
1000+0.55 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BY228TR by228.pdf
BY228TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
auf Bestellung 7717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.90 EUR
14+1.28 EUR
100+1.09 EUR
500+0.87 EUR
1000+0.74 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BY269TR by268.pdf
BY269TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1600V 800MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Avalanche
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
auf Bestellung 37862 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
25+0.72 EUR
100+0.62 EUR
500+0.53 EUR
1000+0.46 EUR
2000+0.45 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BY448TR by448.pdf
BY448TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
auf Bestellung 32058 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
26+0.69 EUR
100+0.61 EUR
500+0.50 EUR
1000+0.42 EUR
2000+0.41 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BYT56M-TR byt56a.pdf
BYT56M-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 40081 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
17+1.07 EUR
100+1.03 EUR
500+0.82 EUR
1000+0.77 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BYT78-TR byt77.pdf
BYT78-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 13443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.80 EUR
15+1.18 EUR
100+1.06 EUR
500+0.86 EUR
1000+0.77 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BYV26B-TR byv26.pdf
BYV26B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 13741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
35+0.51 EUR
100+0.45 EUR
500+0.41 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
BYV26C-TAP byv26.pdf
BYV26C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
auf Bestellung 4780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.30 EUR
20+0.91 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.47 EUR
2000+0.44 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BYV26E-TAP byv26.pdf
BYV26E-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A SOD 57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 6797 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
19+0.97 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.50 EUR
2000+0.46 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BYV26E-TR byv26.pdf
BYV26E-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A SOD 57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 34729 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
34+0.52 EUR
100+0.46 EUR
500+0.44 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BYV27-100-TAP byv27.pdf
BYV27-100-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 2166 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
18+1.01 EUR
100+0.71 EUR
500+0.59 EUR
1000+0.51 EUR
2000+0.49 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BYV27-100-TR byv27.pdf
BYV27-100-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 27397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
29+0.61 EUR
100+0.58 EUR
500+0.50 EUR
1000+0.46 EUR
2000+0.45 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
BYV27-200-TAP byv27.pdf
BYV27-200-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
17+1.07 EUR
100+0.78 EUR
500+0.60 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
BYV27-200-TR byv27.pdf
BYV27-200-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 23679 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
17+1.07 EUR
100+0.78 EUR
500+0.60 EUR
1000+0.55 EUR
2000+0.50 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
BYV28-150-TR byv2850.pdf
BYV28-150-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 6337 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
11+1.74 EUR
100+1.34 EUR
500+1.09 EUR
1000+0.97 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BYV28-200-TAP byv2850.pdf
BYV28-200-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 1596 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
12+1.52 EUR
100+1.30 EUR
500+1.03 EUR
1000+0.97 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
BYV28-600-TR byv28600.pdf
BYV28-600-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 9557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
10+1.78 EUR
100+1.51 EUR
500+1.20 EUR
1000+1.10 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BYV98-200-TR byv98.pdf
BYV98-200-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 4A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 8645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
12+1.54 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.90 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
BYW36-TR byw32.pdf
BYW36-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 16969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
23+0.79 EUR
100+0.72 EUR
500+0.54 EUR
1000+0.41 EUR
2000+0.40 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
BYW54-TR byw52.pdf
BYW54-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 18958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
24+0.75 EUR
100+0.64 EUR
500+0.49 EUR
1000+0.38 EUR
2000+0.37 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BYW56-TR byw52.pdf
BYW56-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 25182 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
30+0.60 EUR
100+0.55 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.43 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C12-TR bzx55.pdf
BZX55C12-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
113+0.16 EUR
309+0.06 EUR
500+0.05 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C3V3-TR bzx55.pdf
BZX55C3V3-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5545 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
334+0.05 EUR
367+0.05 EUR
500+0.05 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C15-TAP BZX85_Series.pdf
BZX85C15-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
94+0.19 EUR
194+0.09 EUR
500+0.09 EUR
1000+0.08 EUR
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BZX85C27-TAP BZX85_Series.pdf
BZX85C27-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10124 Stücke:
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53+0.33 EUR
86+0.21 EUR
185+0.10 EUR
500+0.09 EUR
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SD101A-TR sd101abc.pdf
SD101A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
auf Bestellung 23508 Stücke:
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59+0.30 EUR
98+0.18 EUR
148+0.12 EUR
500+0.10 EUR
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SD101C-TR sd101abc.pdf
SD101C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 30MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
auf Bestellung 5827 Stücke:
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84+0.21 EUR
143+0.12 EUR
210+0.08 EUR
500+0.07 EUR
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SD103A-TR sd103a.pdf
SD103A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 52667 Stücke:
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56+0.32 EUR
77+0.23 EUR
102+0.17 EUR
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SD103C-TR sd103a.pdf
SD103C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
auf Bestellung 70720 Stücke:
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34+0.53 EUR
51+0.35 EUR
100+0.19 EUR
500+0.15 EUR
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SF1600-TR sf1200.pdf
SF1600-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1600V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1600
auf Bestellung 195 Stücke:
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19+0.97 EUR
22+0.83 EUR
100+0.68 EUR
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SF5408-TR sf5400.pdf
SF5408-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 9037 Stücke:
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9+2.16 EUR
12+1.52 EUR
100+1.18 EUR
500+0.94 EUR
1000+0.85 EUR
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1N4148WS-E3-08 1n4148ws.pdf
1N4148WS-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 125718 Stücke:
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91+0.19 EUR
127+0.14 EUR
150+0.12 EUR
500+0.09 EUR
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1N4148W-E3-08 1n4148w.pdf
1N4148W-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 37742 Stücke:
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63+0.28 EUR
100+0.18 EUR
150+0.12 EUR
500+0.09 EUR
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1N4148W-E3-18 1n4148w.pdf
1N4148W-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 132570 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
223+0.08 EUR
292+0.06 EUR
500+0.06 EUR
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1N4150W-E3-08 1n4150w.pdf
1N4150W-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 24901 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
120+0.15 EUR
134+0.13 EUR
500+0.10 EUR
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AZ23C5V6-E3-18 az23_series.pdf
AZ23C5V6-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER ARRAY 5.6V SOT23
Tolerance: ±7%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
auf Bestellung 5273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
51+0.35 EUR
104+0.17 EUR
500+0.14 EUR
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BAS16WS-E3-08 bas16ws.pdf
BAS16WS-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 29534 Stücke:
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Anzahl Preis
84+0.21 EUR
124+0.14 EUR
157+0.11 EUR
500+0.08 EUR
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BAS21-E3-08 bas19_bas20_bas21.pdf
BAS21-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 26638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
79+0.23 EUR
140+0.13 EUR
500+0.09 EUR
1000+0.07 EUR
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BAS40-00-E3-08 BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf
BAS40-00-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 15737 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
100+0.18 EUR
132+0.13 EUR
500+0.11 EUR
1000+0.10 EUR
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BAS40-04-E3-08 BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf
BAS40-04-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 4699 Stücke:
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Anzahl Preis
50+0.35 EUR
84+0.21 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.13 EUR
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BAS40-05-E3-08 BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf
BAS40-05-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 34543 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
132+0.13 EUR
144+0.12 EUR
500+0.11 EUR
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BAS70-00-E3-08 BAS70-00_to_BAS70-06_Rev2.2_2-18-13.pdf
BAS70-00-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 70V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 115187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
77+0.23 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
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BAS70-04-E3-08 BAS70-00_to_BAS70-06_Rev2.2_2-18-13.pdf
BAS70-04-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 25090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
70+0.25 EUR
100+0.19 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 48
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BAS70-05-E3-08 BAS70-00_to_BAS70-06_Rev2.2_2-18-13.pdf
BAS70-05-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 27256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
76+0.23 EUR
100+0.20 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 53
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BAS70-06-E3-08 BAS70-00_to_BAS70-06_Rev2.2_2-18-13.pdf
BAS70-06-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 70V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 410 mV @ 1 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 24403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
125+0.14 EUR
145+0.12 EUR
500+0.11 EUR
Mindestbestellmenge: 77
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BAS85-GS08 bas85.pdf
BAS85-GS08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 12008 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
71+0.25 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 48
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BAT42W-E3-08 bat42w.pdf
BAT42W-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 77294 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
89+0.20 EUR
103+0.17 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 56
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BAT46W-E3-08 bat46w.pdf
BAT46W-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 55348 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
68+0.26 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 46
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BAT54A-E3-08 BAT54_A_C_S_Rev1.9_3-16-16.pdf
BAT54A-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 11615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
112+0.16 EUR
127+0.14 EUR
500+0.11 EUR
1000+0.10 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
BAT54S-E3-08 BAT54_A_C_S_Rev1.9_3-16-16.pdf
BAT54S-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 59698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
134+0.13 EUR
158+0.11 EUR
500+0.10 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
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