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1N5237B-TR 1N5237B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
auf Bestellung 47761 Stücke:
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48+0.37 EUR
70+0.25 EUR
144+0.12 EUR
500+0.1 EUR
1000+0.071 EUR
2000+0.062 EUR
5000+0.057 EUR
Mindestbestellmenge: 48
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1N5240B-TR 1N5240B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 10V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
auf Bestellung 32171 Stücke:
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112+0.16 EUR
417+0.042 EUR
435+0.04 EUR
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1N5242B-TR 1N5242B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 12V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
auf Bestellung 37585 Stücke:
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112+0.16 EUR
304+0.058 EUR
336+0.052 EUR
500+0.043 EUR
1000+0.042 EUR
2000+0.041 EUR
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1N5245B-TR 1N5245B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
auf Bestellung 53302 Stücke:
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84+0.21 EUR
157+0.11 EUR
394+0.045 EUR
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1N5246B-TR 1N5246B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 16V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
auf Bestellung 54222 Stücke:
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112+0.16 EUR
358+0.049 EUR
409+0.043 EUR
500+0.042 EUR
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1N5248B-TR 1N5248B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
auf Bestellung 19614 Stücke:
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56+0.32 EUR
92+0.19 EUR
149+0.12 EUR
500+0.087 EUR
1000+0.068 EUR
2000+0.064 EUR
5000+0.052 EUR
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1N5250B-TR 1N5250B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 20V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 28290 Stücke:
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91+0.19 EUR
141+0.12 EUR
182+0.097 EUR
500+0.095 EUR
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1N5252B-TR 1N5252B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 24V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
auf Bestellung 21829 Stücke:
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112+0.16 EUR
164+0.11 EUR
308+0.057 EUR
500+0.056 EUR
1000+0.054 EUR
2000+0.053 EUR
5000+0.051 EUR
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1N5254B-TR 1N5254B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 27V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
auf Bestellung 29088 Stücke:
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48+0.37 EUR
70+0.25 EUR
144+0.12 EUR
500+0.1 EUR
1000+0.071 EUR
2000+0.062 EUR
5000+0.057 EUR
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1N5262B-TR 1N5262B-TR Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 51V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
auf Bestellung 33412 Stücke:
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100+0.18 EUR
137+0.13 EUR
277+0.064 EUR
500+0.061 EUR
1000+0.059 EUR
2000+0.056 EUR
5000+0.048 EUR
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1N5263B-TAP 1N5263B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 56V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
auf Bestellung 23022 Stücke:
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48+0.37 EUR
70+0.25 EUR
144+0.12 EUR
500+0.1 EUR
1000+0.071 EUR
2000+0.062 EUR
5000+0.057 EUR
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1N5418TR 1N5418TR Vishay General Semiconductor - Diodes Division 1n5417.pdf Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 20803 Stücke:
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12+1.57 EUR
16+1.11 EUR
100+1.06 EUR
500+0.87 EUR
1000+0.77 EUR
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1N5624-TR 1N5624-TR Vishay General Semiconductor - Diodes Division 1n5624.pdf Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 14579 Stücke:
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15+1.23 EUR
18+0.99 EUR
100+0.81 EUR
500+0.71 EUR
1000+0.63 EUR
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1N5625-TR 1N5625-TR Vishay General Semiconductor - Diodes Division 1n5624.pdf Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 8869 Stücke:
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24+0.74 EUR
29+0.62 EUR
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1N5626-TR 1N5626-TR Vishay General Semiconductor - Diodes Division 1n5624.pdf Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 4852 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.55 EUR
11+1.61 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.77 EUR
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1N5627-TR 1N5627-TR Vishay General Semiconductor - Diodes Division 1n5624.pdf Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 1854 Stücke:
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16+1.14 EUR
20+0.91 EUR
100+0.81 EUR
500+0.79 EUR
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BAT42-TR BAT42-TR Vishay General Semiconductor - Diodes Division bat42.pdf Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 42484 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
103+0.17 EUR
114+0.16 EUR
500+0.12 EUR
1000+0.096 EUR
2000+0.094 EUR
5000+0.087 EUR
Mindestbestellmenge: 77
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BAT46-TR BAT46-TR Vishay General Semiconductor - Diodes Division bat46.pdf Description: DIODE SCHOTTK 100V 150MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 41715 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
110+0.16 EUR
146+0.12 EUR
500+0.096 EUR
1000+0.086 EUR
2000+0.083 EUR
5000+0.082 EUR
Mindestbestellmenge: 67
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BAT85S-TAP BAT85S-TAP Vishay General Semiconductor - Diodes Division bat85s.pdf Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 697 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
120+0.15 EUR
500+0.11 EUR
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BAT85S-TR BAT85S-TR Vishay General Semiconductor - Diodes Division bat85s.pdf Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 40972 Stücke:
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40+0.44 EUR
65+0.27 EUR
104+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.098 EUR
5000+0.085 EUR
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BAV21-TR BAV21-TR Vishay General Semiconductor - Diodes Division bav17.pdf Description: DIODE STD 200V 250MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 39688 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.19 EUR
127+0.14 EUR
155+0.11 EUR
500+0.08 EUR
1000+0.066 EUR
2000+0.065 EUR
5000+0.055 EUR
Mindestbestellmenge: 91
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BY203-20STR BY203-20STR Vishay General Semiconductor - Diodes Division by20312s.pdf Description: DIODE AVAL 2000V 250MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 52401 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.21 EUR
20+0.88 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.52 EUR
2000+0.51 EUR
Mindestbestellmenge: 15
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BY228TR BY228TR Vishay General Semiconductor - Diodes Division by228.pdf Description: DIODE AVALANCHE 1500V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
auf Bestellung 7403 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
15+1.22 EUR
100+1.07 EUR
500+0.85 EUR
1000+0.77 EUR
Mindestbestellmenge: 10
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BY269TR BY269TR Vishay General Semiconductor - Diodes Division by268.pdf Description: DIODE AVAL 1600V 800MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Avalanche
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
auf Bestellung 37825 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.88 EUR
28+0.63 EUR
100+0.53 EUR
500+0.45 EUR
Mindestbestellmenge: 20
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BY448TR BY448TR Vishay General Semiconductor - Diodes Division by448.pdf Description: DIODE AVALANCHE 1500V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
auf Bestellung 17038 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
26+0.68 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.43 EUR
2000+0.41 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BYT56M-TR BYT56M-TR Vishay General Semiconductor - Diodes Division byt56a.pdf Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 40081 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
17+1.07 EUR
100+1.03 EUR
500+0.82 EUR
1000+0.77 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BYT78-TR BYT78-TR Vishay General Semiconductor - Diodes Division byt77.pdf Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 13443 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.8 EUR
15+1.18 EUR
100+1.06 EUR
500+0.86 EUR
1000+0.77 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BYV26B-TR BYV26B-TR Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 13741 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
35+0.51 EUR
100+0.47 EUR
500+0.44 EUR
2000+0.4 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
BYV26C-TAP BYV26C-TAP Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 600V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
auf Bestellung 4145 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
26+0.68 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.44 EUR
2000+0.42 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
BYV26E-TAP BYV26E-TAP Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 1KV 1A SOD 57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 6547 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
27+0.67 EUR
100+0.62 EUR
500+0.52 EUR
1000+0.45 EUR
2000+0.44 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
BYV26E-TR BYV26E-TR Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 1KV 1A SOD 57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 34729 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
34+0.52 EUR
100+0.46 EUR
500+0.44 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BYV27-100-TAP BYV27-100-TAP Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 100V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 2166 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.32 EUR
18+1.01 EUR
100+0.71 EUR
500+0.59 EUR
1000+0.51 EUR
2000+0.49 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BYV27-100-TR BYV27-100-TR Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 100V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 27397 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
29+0.61 EUR
100+0.58 EUR
500+0.5 EUR
1000+0.46 EUR
2000+0.45 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
BYV27-200-TAP BYV27-200-TAP Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 4589 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.32 EUR
19+0.98 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.5 EUR
2000+0.47 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BYV27-200-TR BYV27-200-TR Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 19369 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
23+0.78 EUR
100+0.64 EUR
500+0.54 EUR
1000+0.48 EUR
2000+0.47 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BYV28-150-TR BYV28-150-TR Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 6337 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.52 EUR
11+1.74 EUR
100+1.34 EUR
500+1.09 EUR
1000+0.97 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BYV28-200-TAP BYV28-200-TAP Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 200V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 1596 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.01 EUR
12+1.52 EUR
100+1.3 EUR
500+1.03 EUR
1000+0.97 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
BYV28-600-TR BYV28-600-TR Vishay General Semiconductor - Diodes Division byv28600.pdf Description: DIODE AVALANCHE 600V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 9557 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
10+1.78 EUR
100+1.51 EUR
500+1.2 EUR
1000+1.1 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BYV98-200-TR BYV98-200-TR Vishay General Semiconductor - Diodes Division byv98.pdf Description: DIODE AVALANCHE 200V 4A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 8645 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
12+1.54 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.9 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
BYW36-TR BYW36-TR Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 16969 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
23+0.79 EUR
100+0.72 EUR
500+0.54 EUR
1000+0.41 EUR
2000+0.4 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
BYW54-TR BYW54-TR Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 18922 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
25+0.71 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.37 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
BYW56-TR BYW56-TR Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 25182 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
30+0.6 EUR
100+0.55 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.43 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C12-TR BZX55C12-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12703 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
122+0.14 EUR
335+0.053 EUR
500+0.05 EUR
Mindestbestellmenge: 84
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BZX55C3V3-TR BZX55C3V3-TR Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5534 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
334+0.053 EUR
370+0.048 EUR
500+0.045 EUR
Mindestbestellmenge: 112
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BZX85C15-TAP BZX85C15-TAP Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 15V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6745 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
99+0.18 EUR
205+0.086 EUR
500+0.082 EUR
1000+0.079 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C27-TAP BZX85C27-TAP Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 27V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10124 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
86+0.21 EUR
185+0.096 EUR
500+0.094 EUR
1000+0.092 EUR
2000+0.09 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
SD101A-TR SD101A-TR Vishay General Semiconductor - Diodes Division sd101abc.pdf Description: DIODE SCHOTTKY 60V 30MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
auf Bestellung 23508 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
98+0.18 EUR
148+0.12 EUR
500+0.095 EUR
1000+0.082 EUR
2000+0.08 EUR
5000+0.076 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
SD101C-TR SD101C-TR Vishay General Semiconductor - Diodes Division sd101abc.pdf Description: DIODE SCHOTTKY 40V 30MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
auf Bestellung 5827 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
143+0.12 EUR
210+0.084 EUR
500+0.072 EUR
1000+0.071 EUR
2000+0.07 EUR
5000+0.069 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
SD103A-TR SD103A-TR Vishay General Semiconductor - Diodes Division sd103a.pdf Description: DIODE SCHOTTKY 40V DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 52667 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
77+0.23 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.1 EUR
2000+0.099 EUR
5000+0.095 EUR
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SD103C-TR SD103C-TR Vishay General Semiconductor - Diodes Division sd103a.pdf Description: DIODE SCHOTTKY 20V DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
auf Bestellung 70720 Stücke:
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SF1600-TR SF1600-TR Vishay General Semiconductor - Diodes Division sf1200.pdf Description: DIODE AVALANCHE 1600V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1600
auf Bestellung 19137 Stücke:
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SF5408-TR SF5408-TR Vishay General Semiconductor - Diodes Division sf5400.pdf Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 9037 Stücke:
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1N4148WS-E3-08 1N4148WS-E3-08 Vishay General Semiconductor - Diodes Division 1n4148ws.pdf Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 106359 Stücke:
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1N4148W-E3-08 1N4148W-E3-08 Vishay General Semiconductor - Diodes Division 1n4148w.pdf Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 24658 Stücke:
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1N4148W-E3-18 1N4148W-E3-18 Vishay General Semiconductor - Diodes Division 1n4148w.pdf Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 125550 Stücke:
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226+0.078 EUR
500+0.06 EUR
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1N4150W-E3-08 1N4150W-E3-08 Vishay General Semiconductor - Diodes Division 1n4150w.pdf Description: DIODE STANDARD 50V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 24901 Stücke:
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72+0.25 EUR
120+0.15 EUR
134+0.13 EUR
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AZ23C5V6-E3-18 AZ23C5V6-E3-18 Vishay General Semiconductor - Diodes Division az23_series.pdf Description: DIODE ZENER ARRAY 5.6V SOT23
Tolerance: ±7%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
auf Bestellung 5273 Stücke:
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35+0.51 EUR
51+0.35 EUR
104+0.17 EUR
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BAS16WS-E3-08 BAS16WS-E3-08 Vishay General Semiconductor - Diodes Division bas16ws.pdf Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 29534 Stücke:
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91+0.19 EUR
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BAS21-E3-08 BAS21-E3-08 Vishay General Semiconductor - Diodes Division bas19_bas20_bas21.pdf Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 23574 Stücke:
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53+0.33 EUR
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BAS40-00-E3-08 BAS40-00-E3-08 Vishay General Semiconductor - Diodes Division BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf Description: DIODE SCHOTTKY 40V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 15735 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
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111+0.16 EUR
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1N5237B-TR 1n5221.pdf
1N5237B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
auf Bestellung 47761 Stücke:
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Anzahl Preis
48+0.37 EUR
70+0.25 EUR
144+0.12 EUR
500+0.1 EUR
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2000+0.062 EUR
5000+0.057 EUR
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1N5240B-TR 1n5221.pdf
1N5240B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
auf Bestellung 32171 Stücke:
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Anzahl Preis
112+0.16 EUR
417+0.042 EUR
435+0.04 EUR
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1N5242B-TR 1n5221.pdf
1N5242B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
auf Bestellung 37585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
304+0.058 EUR
336+0.052 EUR
500+0.043 EUR
1000+0.042 EUR
2000+0.041 EUR
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1N5245B-TR 1n5221.pdf
1N5245B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
auf Bestellung 53302 Stücke:
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84+0.21 EUR
157+0.11 EUR
394+0.045 EUR
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1N5246B-TR 1n5221.pdf
1N5246B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 16V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
auf Bestellung 54222 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
358+0.049 EUR
409+0.043 EUR
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1N5248B-TR 1n5221.pdf
1N5248B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
auf Bestellung 19614 Stücke:
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56+0.32 EUR
92+0.19 EUR
149+0.12 EUR
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1N5250B-TR 1n5221.pdf
1N5250B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 20V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
auf Bestellung 28290 Stücke:
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Anzahl Preis
91+0.19 EUR
141+0.12 EUR
182+0.097 EUR
500+0.095 EUR
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1N5252B-TR 1n5221.pdf
1N5252B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 33 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
auf Bestellung 21829 Stücke:
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Anzahl Preis
112+0.16 EUR
164+0.11 EUR
308+0.057 EUR
500+0.056 EUR
1000+0.054 EUR
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1N5254B-TR 1n5221.pdf
1N5254B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
auf Bestellung 29088 Stücke:
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Anzahl Preis
48+0.37 EUR
70+0.25 EUR
144+0.12 EUR
500+0.1 EUR
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2000+0.062 EUR
5000+0.057 EUR
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1N5262B-TR 1n5221.pdf
1N5262B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
auf Bestellung 33412 Stücke:
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Anzahl Preis
100+0.18 EUR
137+0.13 EUR
277+0.064 EUR
500+0.061 EUR
1000+0.059 EUR
2000+0.056 EUR
5000+0.048 EUR
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1N5263B-TAP 1n5221.pdf
1N5263B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
auf Bestellung 23022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
70+0.25 EUR
144+0.12 EUR
500+0.1 EUR
1000+0.071 EUR
2000+0.062 EUR
5000+0.057 EUR
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1N5418TR 1n5417.pdf
1N5418TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 20803 Stücke:
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Anzahl Preis
12+1.57 EUR
16+1.11 EUR
100+1.06 EUR
500+0.87 EUR
1000+0.77 EUR
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1N5624-TR 1n5624.pdf
1N5624-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 14579 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
18+0.99 EUR
100+0.81 EUR
500+0.71 EUR
1000+0.63 EUR
Mindestbestellmenge: 15
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1N5625-TR 1n5624.pdf
1N5625-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 8869 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
29+0.62 EUR
Mindestbestellmenge: 24
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1N5626-TR 1n5624.pdf
1N5626-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 4852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
11+1.61 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.77 EUR
Mindestbestellmenge: 7
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1N5627-TR 1n5624.pdf
1N5627-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7.5 µs
Technology: Avalanche
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 1854 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
20+0.91 EUR
100+0.81 EUR
500+0.79 EUR
Mindestbestellmenge: 16
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BAT42-TR bat42.pdf
BAT42-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
auf Bestellung 42484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
103+0.17 EUR
114+0.16 EUR
500+0.12 EUR
1000+0.096 EUR
2000+0.094 EUR
5000+0.087 EUR
Mindestbestellmenge: 77
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BAT46-TR bat46.pdf
BAT46-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 150MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 41715 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
110+0.16 EUR
146+0.12 EUR
500+0.096 EUR
1000+0.086 EUR
2000+0.083 EUR
5000+0.082 EUR
Mindestbestellmenge: 67
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BAT85S-TAP bat85s.pdf
BAT85S-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 697 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
120+0.15 EUR
500+0.11 EUR
Mindestbestellmenge: 72
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BAT85S-TR bat85s.pdf
BAT85S-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 40972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
65+0.27 EUR
104+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.098 EUR
5000+0.085 EUR
Mindestbestellmenge: 40
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BAV21-TR bav17.pdf
BAV21-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 250MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 39688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
127+0.14 EUR
155+0.11 EUR
500+0.08 EUR
1000+0.066 EUR
2000+0.065 EUR
5000+0.055 EUR
Mindestbestellmenge: 91
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BY203-20STR by20312s.pdf
BY203-20STR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 2000V 250MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 52401 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
20+0.88 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.52 EUR
2000+0.51 EUR
Mindestbestellmenge: 15
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BY228TR by228.pdf
BY228TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1500 V
auf Bestellung 7403 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
15+1.22 EUR
100+1.07 EUR
500+0.85 EUR
1000+0.77 EUR
Mindestbestellmenge: 10
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BY269TR by268.pdf
BY269TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1600V 800MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Avalanche
Current - Average Rectified (Io): 800mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 400 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1600 V
auf Bestellung 37825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
28+0.63 EUR
100+0.53 EUR
500+0.45 EUR
Mindestbestellmenge: 20
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BY448TR by448.pdf
BY448TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1500V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 1500 V
auf Bestellung 17038 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
26+0.68 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.43 EUR
2000+0.41 EUR
Mindestbestellmenge: 19
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BYT56M-TR byt56a.pdf
BYT56M-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 40081 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
17+1.07 EUR
100+1.03 EUR
500+0.82 EUR
1000+0.77 EUR
Mindestbestellmenge: 13
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BYT78-TR byt77.pdf
BYT78-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 13443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
15+1.18 EUR
100+1.06 EUR
500+0.86 EUR
1000+0.77 EUR
Mindestbestellmenge: 10
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BYV26B-TR byv26.pdf
BYV26B-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 13741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
35+0.51 EUR
100+0.47 EUR
500+0.44 EUR
2000+0.4 EUR
Mindestbestellmenge: 27
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BYV26C-TAP byv26.pdf
BYV26C-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
auf Bestellung 4145 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
26+0.68 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.44 EUR
2000+0.42 EUR
Mindestbestellmenge: 21
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BYV26E-TAP byv26.pdf
BYV26E-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A SOD 57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 6547 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
27+0.67 EUR
100+0.62 EUR
500+0.52 EUR
1000+0.45 EUR
2000+0.44 EUR
Mindestbestellmenge: 21
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BYV26E-TR byv26.pdf
BYV26E-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A SOD 57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 34729 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
34+0.52 EUR
100+0.46 EUR
500+0.44 EUR
Mindestbestellmenge: 30
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BYV27-100-TAP byv27.pdf
BYV27-100-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 2166 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
18+1.01 EUR
100+0.71 EUR
500+0.59 EUR
1000+0.51 EUR
2000+0.49 EUR
Mindestbestellmenge: 14
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BYV27-100-TR byv27.pdf
BYV27-100-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 100V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 27397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
29+0.61 EUR
100+0.58 EUR
500+0.5 EUR
1000+0.46 EUR
2000+0.45 EUR
Mindestbestellmenge: 23
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BYV27-200-TAP byv27.pdf
BYV27-200-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 4589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
19+0.98 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.5 EUR
2000+0.47 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BYV27-200-TR byv27.pdf
BYV27-200-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 19369 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
23+0.78 EUR
100+0.64 EUR
500+0.54 EUR
1000+0.48 EUR
2000+0.47 EUR
Mindestbestellmenge: 18
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BYV28-150-TR byv2850.pdf
BYV28-150-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 6337 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
11+1.74 EUR
100+1.34 EUR
500+1.09 EUR
1000+0.97 EUR
Mindestbestellmenge: 7
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BYV28-200-TAP byv2850.pdf
BYV28-200-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 1596 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
12+1.52 EUR
100+1.3 EUR
500+1.03 EUR
1000+0.97 EUR
Mindestbestellmenge: 9
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BYV28-600-TR byv28600.pdf
BYV28-600-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 9557 Stücke:
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Anzahl Preis
8+2.43 EUR
10+1.78 EUR
100+1.51 EUR
500+1.2 EUR
1000+1.1 EUR
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BYV98-200-TR byv98.pdf
BYV98-200-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 4A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Avalanche
Current - Average Rectified (Io): 4A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 8645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
12+1.54 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.9 EUR
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BYW36-TR byw32.pdf
BYW36-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 16969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
23+0.79 EUR
100+0.72 EUR
500+0.54 EUR
1000+0.41 EUR
2000+0.4 EUR
Mindestbestellmenge: 17
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BYW54-TR byw52.pdf
BYW54-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 18922 Stücke:
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Anzahl Preis
20+0.92 EUR
25+0.71 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.37 EUR
Mindestbestellmenge: 20
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BYW56-TR byw52.pdf
BYW56-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 25182 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
30+0.6 EUR
100+0.55 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.43 EUR
Mindestbestellmenge: 23
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BZX55C12-TR bzx55.pdf
BZX55C12-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9.1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
122+0.14 EUR
335+0.053 EUR
500+0.05 EUR
Mindestbestellmenge: 84
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BZX55C3V3-TR bzx55.pdf
BZX55C3V3-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5534 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
334+0.053 EUR
370+0.048 EUR
500+0.045 EUR
Mindestbestellmenge: 112
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BZX85C15-TAP BZX85_Series.pdf
BZX85C15-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
99+0.18 EUR
205+0.086 EUR
500+0.082 EUR
1000+0.079 EUR
Mindestbestellmenge: 56
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BZX85C27-TAP BZX85_Series.pdf
BZX85C27-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±7%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
86+0.21 EUR
185+0.096 EUR
500+0.094 EUR
1000+0.092 EUR
2000+0.09 EUR
Mindestbestellmenge: 53
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SD101A-TR sd101abc.pdf
SD101A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
auf Bestellung 23508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
98+0.18 EUR
148+0.12 EUR
500+0.095 EUR
1000+0.082 EUR
2000+0.08 EUR
5000+0.076 EUR
Mindestbestellmenge: 59
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SD101C-TR sd101abc.pdf
SD101C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 30MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
auf Bestellung 5827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
143+0.12 EUR
210+0.084 EUR
500+0.072 EUR
1000+0.071 EUR
2000+0.07 EUR
5000+0.069 EUR
Mindestbestellmenge: 84
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SD103A-TR sd103a.pdf
SD103A-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
auf Bestellung 52667 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
77+0.23 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.1 EUR
2000+0.099 EUR
5000+0.095 EUR
Mindestbestellmenge: 56
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SD103C-TR sd103a.pdf
SD103C-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
auf Bestellung 70720 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
51+0.35 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.11 EUR
5000+0.094 EUR
Mindestbestellmenge: 34
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SF1600-TR sf1200.pdf
SF1600-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1600V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 1600
auf Bestellung 19137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
24+0.76 EUR
100+0.63 EUR
500+0.53 EUR
1000+0.48 EUR
2000+0.45 EUR
Mindestbestellmenge: 20
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SF5408-TR sf5400.pdf
SF5408-TR
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 9037 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
12+1.52 EUR
100+1.18 EUR
500+0.94 EUR
1000+0.85 EUR
Mindestbestellmenge: 9
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1N4148WS-E3-08 1n4148ws.pdf
1N4148WS-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 106359 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
127+0.14 EUR
150+0.12 EUR
500+0.086 EUR
1000+0.074 EUR
Mindestbestellmenge: 91
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1N4148W-E3-08 1n4148w.pdf
1N4148W-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 24658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
100+0.18 EUR
150+0.12 EUR
500+0.086 EUR
1000+0.074 EUR
Mindestbestellmenge: 63
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1N4148W-E3-18 1n4148w.pdf
1N4148W-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 150MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
auf Bestellung 125550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
223+0.079 EUR
226+0.078 EUR
500+0.06 EUR
1000+0.051 EUR
Mindestbestellmenge: 100
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1N4150W-E3-08 1n4150w.pdf
1N4150W-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 24901 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
120+0.15 EUR
134+0.13 EUR
500+0.098 EUR
1000+0.087 EUR
Mindestbestellmenge: 72
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AZ23C5V6-E3-18 az23_series.pdf
AZ23C5V6-E3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER ARRAY 5.6V SOT23
Tolerance: ±7%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23-3
Part Status: Active
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
auf Bestellung 5273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
51+0.35 EUR
104+0.17 EUR
500+0.14 EUR
1000+0.099 EUR
2000+0.086 EUR
5000+0.079 EUR
Mindestbestellmenge: 35
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BAS16WS-E3-08 bas16ws.pdf
BAS16WS-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 29534 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
130+0.14 EUR
165+0.11 EUR
500+0.078 EUR
1000+0.071 EUR
Mindestbestellmenge: 91
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BAS21-E3-08 bas19_bas20_bas21.pdf
BAS21-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
auf Bestellung 23574 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
79+0.23 EUR
141+0.13 EUR
500+0.086 EUR
1000+0.073 EUR
Mindestbestellmenge: 53
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BAS40-00-E3-08 BAS40-00_to_BAS40-06_Rev2.2_2-13-18.pdf
BAS40-00-E3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 15735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
103+0.17 EUR
111+0.16 EUR
500+0.12 EUR
1000+0.098 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
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