Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (36382) > Seite 179 nach 607

Wählen Sie Seite:   [  << Vorherige Seite ]  1 60 120 174 175 176 177 178 179 180 181 182 183 184 240 300 360 420 480 540 600 607  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
SMCJ8.5CA-E3/57T SMCJ8.5CA-E3/57T Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 104.2A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 1736 Stücke:
Lieferzeit 21-28 Tag (e)
17+1.59 EUR
20+ 1.34 EUR
100+ 0.93 EUR
Mindestbestellmenge: 17
UG4D-E3/54 UG4D-E3/54 Vishay General Semiconductor - Diodes Division ug4a.pdf Description: DIODE GEN PURP 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 10354 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.51 EUR
20+ 1.3 EUR
100+ 0.9 EUR
500+ 0.71 EUR
Mindestbestellmenge: 18
UH4PDC-M3/86A UH4PDC-M3/86A Vishay General Semiconductor - Diodes Division UH4PBC%2CPCC%2CPDC.pdf Description: DIODE ARRAY GP 200V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
VB10170C-E3/8W VB10170C-E3/8W Vishay General Semiconductor - Diodes Division vb10170c.pdf Description: DIODE ARRAY SCHOTTKY 170V TO236
Produkt ist nicht verfügbar
VB40170C-E3/8W Vishay General Semiconductor - Diodes Division vb40170c.pdf Description: DIODE ARRAY SCHOTTKY 170V TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 170 V
Produkt ist nicht verfügbar
VS-ETH1506-1-M3 VS-ETH1506-1-M3 Vishay General Semiconductor - Diodes Division vs-eth1506s-m3.pdf Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETH3006-M3 VS-ETH3006-M3 Vishay General Semiconductor - Diodes Division vs-eth3006-m3.pdf Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 5718 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.03 EUR
50+ 3.23 EUR
100+ 2.66 EUR
500+ 2.25 EUR
1000+ 1.91 EUR
2000+ 1.81 EUR
5000+ 1.74 EUR
Mindestbestellmenge: 7
VS-ETL1506-1-M3 VS-ETL1506-1-M3 Vishay General Semiconductor - Diodes Division vs-etl1506s-m3.pdf Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETX1506FP-M3 VS-ETX1506FP-M3 Vishay General Semiconductor - Diodes Division vs-etx1506fpm3.pdf Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
auf Bestellung 1722 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.43 EUR
10+ 2.81 EUR
100+ 2.18 EUR
500+ 1.85 EUR
1000+ 1.51 EUR
Mindestbestellmenge: 8
VS-ETU1506-1-M3 VS-ETU1506-1-M3 Vishay General Semiconductor - Diodes Division vs-etu1506sm3.pdf Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETL1506FP-M3 VS-ETL1506FP-M3 Vishay General Semiconductor - Diodes Division vs-etl1506fpm3.pdf Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 817 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.43 EUR
10+ 2.81 EUR
100+ 2.18 EUR
500+ 1.85 EUR
Mindestbestellmenge: 8
VS-6EWH06FNTR-M3 VS-6EWH06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-6ewh06fn-m3.pdf Description: DIODE GEN PURP 600V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 5676 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.08 EUR
15+ 1.81 EUR
100+ 1.26 EUR
500+ 1.05 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
VS-ETH3006FP-M3 VS-ETH3006FP-M3 Vishay General Semiconductor - Diodes Division vs-eth3006fpm3.pdf Description: DIODE GP 600V 30A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 1057 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.06 EUR
50+ 3.26 EUR
100+ 2.68 EUR
500+ 2.27 EUR
1000+ 1.92 EUR
Mindestbestellmenge: 7
VS-ETU3006-M3 VS-ETU3006-M3 Vishay General Semiconductor - Diodes Division vs-etu3006-m3.pdf Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
VS-8S2TH06I-M VS-8S2TH06I-M Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETL1506-M3 VS-ETL1506-M3 Vishay General Semiconductor - Diodes Division vs-etl1506-m3.pdf Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 14757 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.3 EUR
50+ 2.65 EUR
100+ 2.1 EUR
500+ 1.78 EUR
1000+ 1.45 EUR
2000+ 1.37 EUR
5000+ 1.3 EUR
10000+ 1.24 EUR
Mindestbestellmenge: 8
VS-ETH1506-M3 VS-ETH1506-M3 Vishay General Semiconductor - Diodes Division vs-eth1506-m3.pdf Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETX0806FP-M3 VS-ETX0806FP-M3 Vishay General Semiconductor - Diodes Division vs-etx0806fpm3.pdf Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 880 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.73 EUR
50+ 2.2 EUR
100+ 1.74 EUR
Mindestbestellmenge: 10
VS-ETL0806FP-M3 VS-ETL0806FP-M3 Vishay General Semiconductor - Diodes Division vs-etl0806fpm3.pdf Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A
Current - Reverse Leakage @ Vr: 9 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETH0806FP-M3 VS-ETH0806FP-M3 Vishay General Semiconductor - Diodes Division vs-eth0806fp-m3.pdf Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
Current - Reverse Leakage @ Vr: 12 µA @ 600 V
auf Bestellung 986 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.73 EUR
12+ 2.23 EUR
100+ 1.74 EUR
500+ 1.47 EUR
Mindestbestellmenge: 10
VS-ETX0806-M3 VS-ETX0806-M3 Vishay General Semiconductor - Diodes Division vs-etx0806-m3.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 1172 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.52 EUR
50+ 2.03 EUR
100+ 1.61 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 11
VS-ETL0806-M3 VS-ETL0806-M3 Vishay General Semiconductor - Diodes Division vs-etl0806-m3.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A
Current - Reverse Leakage @ Vr: 9 µA @ 600 V
auf Bestellung 4489 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.55 EUR
50+ 2.05 EUR
100+ 1.62 EUR
500+ 1.38 EUR
1000+ 1.12 EUR
2000+ 1.06 EUR
Mindestbestellmenge: 11
VS-ETH0806-M3 VS-ETH0806-M3 Vishay General Semiconductor - Diodes Division vs-eth0806m3.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
Current - Reverse Leakage @ Vr: 12 µA @ 600 V
auf Bestellung 4553 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.52 EUR
13+ 2.06 EUR
100+ 1.6 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
2000+ 1.04 EUR
Mindestbestellmenge: 11
VS-ETU3006-1-M3 VS-ETU3006-1-M3 Vishay General Semiconductor - Diodes Division vs-etu3006s-m3.pdf Description: DIODE GEN PURP 600V 30A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
VS-EPH3006-N3 VS-EPH3006-N3 Vishay General Semiconductor - Diodes Division vs-aph3006n3.pdf Description: DIODE GP 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 425 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.91 EUR
25+ 11.01 EUR
100+ 9.44 EUR
Mindestbestellmenge: 2
VS-5EWH06FNTR-M3 VS-5EWH06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-5ewh06fn-m3.pdf Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 46000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.76 EUR
6000+ 0.72 EUR
10000+ 0.67 EUR
Mindestbestellmenge: 2000
VS-ETH3006-1-M3 VS-ETH3006-1-M3 Vishay General Semiconductor - Diodes Division vs-eth3006s-m3.pdf Description: DIODE GEN PURP 600V 30A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETU3006FP-M3 VS-ETU3006FP-M3 Vishay General Semiconductor - Diodes Division vs-etu3006fpm3.pdf Description: DIODE GP 600V 30A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 2937 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.06 EUR
50+ 3.26 EUR
100+ 2.68 EUR
500+ 2.27 EUR
1000+ 1.92 EUR
2000+ 1.83 EUR
Mindestbestellmenge: 7
VS-ETU1506FP-M3 VS-ETU1506FP-M3 Vishay General Semiconductor - Diodes Division vs-etu1506fpm3.pdf Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 71 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.43 EUR
10+ 2.81 EUR
Mindestbestellmenge: 8
VS-ETH1506FP-M3 VS-ETH1506FP-M3 Vishay General Semiconductor - Diodes Division vs-eth1506fpm3.pdf Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 1411 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.48 EUR
50+ 2.79 EUR
100+ 2.21 EUR
500+ 1.87 EUR
1000+ 1.53 EUR
Mindestbestellmenge: 8
VS-ETX1506-M3 VS-ETX1506-M3 Vishay General Semiconductor - Diodes Division vs-etx1506-m3.pdf Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETX1506-1-M3 VS-ETX1506-1-M3 Vishay General Semiconductor - Diodes Division vs-etx1506s-m3.pdf Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETH3006S-M3 VS-ETH3006S-M3 Vishay General Semiconductor - Diodes Division vs-eth3006s-m3.pdf Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.34 EUR
50+ 3.5 EUR
100+ 2.88 EUR
500+ 2.44 EUR
1000+ 2.07 EUR
2000+ 1.96 EUR
Mindestbestellmenge: 6
VS-15EWX06FNTR-M3 VS-15EWX06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-15ewx06fn-m3.pdf Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 26000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+1.24 EUR
6000+ 1.18 EUR
10000+ 1.13 EUR
Mindestbestellmenge: 2000
VS-ETU3006S-M3 VS-ETU3006S-M3 Vishay General Semiconductor - Diodes Division vs-etu3006s-m3.pdf Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 4680 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.37 EUR
50+ 3.5 EUR
100+ 2.88 EUR
500+ 2.44 EUR
1000+ 2.07 EUR
2000+ 1.97 EUR
Mindestbestellmenge: 6
VS-ETX1506S-M3 Vishay General Semiconductor - Diodes Division vs-etx1506s-m3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETL1506S-M3 VS-ETL1506S-M3 Vishay General Semiconductor - Diodes Division vs-etl1506s-m3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 4503 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.61 EUR
10+ 2.96 EUR
100+ 2.3 EUR
500+ 1.95 EUR
1000+ 1.59 EUR
2000+ 1.49 EUR
Mindestbestellmenge: 8
VS-ETH1506S-M3 VS-ETH1506S-M3 Vishay General Semiconductor - Diodes Division vs-eth1506s-m3.pdf Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 6827 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.72 EUR
10+ 3.04 EUR
100+ 2.37 EUR
500+ 2.01 EUR
1000+ 1.63 EUR
2000+ 1.54 EUR
5000+ 1.47 EUR
Mindestbestellmenge: 7
VS-5EWH06FNTR-M3 VS-5EWH06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-5ewh06fn-m3.pdf Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 46206 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.03 EUR
15+ 1.74 EUR
100+ 1.21 EUR
500+ 1.01 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 13
VS-15EWH06FNTR-M3 VS-15EWH06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-15ewh06fn-m3.pdf Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+1.24 EUR
Mindestbestellmenge: 2000
VS-15EWH06FNTR-M3 VS-15EWH06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-15ewh06fn-m3.pdf Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 6294 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.99 EUR
11+ 2.45 EUR
100+ 1.91 EUR
500+ 1.62 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 9
VS-15EWL06FNTR-M3 VS-15EWL06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-15ewl06fn-m3.pdf Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 20473 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.99 EUR
11+ 2.45 EUR
100+ 1.91 EUR
500+ 1.62 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 9
VS-15EWX06FNTR-M3 VS-15EWX06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-15ewx06fn-m3.pdf Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 29215 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.99 EUR
11+ 2.45 EUR
100+ 1.91 EUR
500+ 1.62 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 9
VS-8EWL06FNTR-M3 VS-8EWL06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-8ewl06fn-m3.pdf Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 3423 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.5 EUR
13+ 2.03 EUR
100+ 1.58 EUR
500+ 1.34 EUR
1000+ 1.09 EUR
Mindestbestellmenge: 11
VS-8EWX06FNTR-M3 VS-8EWX06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-8ewx06fn-m3.pdf Description: DIODE GEN PURP 600V 8A DPAK
auf Bestellung 39 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.6 EUR
12+ 2.31 EUR
Mindestbestellmenge: 10
VS-6EWH06FNTR-M3 VS-6EWH06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-6ewh06fn-m3.pdf Description: DIODE GEN PURP 600V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.8 EUR
Mindestbestellmenge: 2000
VS-8EWX06FNTR-M3 VS-8EWX06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-8ewx06fn-m3.pdf Description: DIODE GEN PURP 600V 8A DPAK
Produkt ist nicht verfügbar
VS-8EWL06FNTR-M3 VS-8EWL06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-8ewl06fn-m3.pdf Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 3423 Stücke:
Lieferzeit 21-28 Tag (e)
2000+1.02 EUR
Mindestbestellmenge: 2000
VS-15EWL06FNTR-M3 VS-15EWL06FNTR-M3 Vishay General Semiconductor - Diodes Division vs-15ewl06fn-m3.pdf Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+1.24 EUR
6000+ 1.18 EUR
10000+ 1.13 EUR
Mindestbestellmenge: 2000
VS-8ETX06SPBF VS-8ETX06SPBF Vishay General Semiconductor - Diodes Division VS-8ETX06SPbF_VS-8ETX06-1PbF.pdf Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
V40170C-M3/4W V40170C-M3/4W Vishay General Semiconductor - Diodes Division v40170c-m3.pdf Description: DIODE ARRAY SCHOTTKY 170V TO220
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
VB60170G-E3/8W VB60170G-E3/8W Vishay General Semiconductor - Diodes Division vb60170g.pdf Description: DIODE ARR SCHOT 170V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 170 V
auf Bestellung 5600 Stücke:
Lieferzeit 21-28 Tag (e)
800+3.44 EUR
1600+ 2.92 EUR
2400+ 2.77 EUR
5600+ 2.67 EUR
Mindestbestellmenge: 800
VB60170G-E3/8W VB60170G-E3/8W Vishay General Semiconductor - Diodes Division vb60170g.pdf Description: DIODE ARR SCHOT 170V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 170 V
auf Bestellung 5941 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.14 EUR
10+ 5.11 EUR
100+ 4.06 EUR
Mindestbestellmenge: 5
V40170PW-M3/4W V40170PW-M3/4W Vishay General Semiconductor - Diodes Division V40170PW-M3.pdf Description: DIODE ARRAY SCHOTTKY 170V TO3PW
Produkt ist nicht verfügbar
VS-15EWX06FN-M3 VS-15EWX06FN-M3 Vishay General Semiconductor - Diodes Division vs-15ewx06fn-m3.pdf Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 736 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.99 EUR
75+ 2.41 EUR
150+ 1.91 EUR
525+ 1.62 EUR
Mindestbestellmenge: 9
VS-6EWX06FN-M3 VS-6EWX06FN-M3 Vishay General Semiconductor - Diodes Division vs-6ewx06fn-m3.pdf Description: DIODE GEN PURP 600V 6A DPAK
Produkt ist nicht verfügbar
VS-5EWX06FN-M3 VS-5EWX06FN-M3 Vishay General Semiconductor - Diodes Division vs-5ewx06fn-m3.pdf Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 2940 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.03 EUR
75+ 1.66 EUR
150+ 1.21 EUR
525+ 1.01 EUR
1050+ 0.86 EUR
2025+ 0.76 EUR
Mindestbestellmenge: 13
1.5KE51CA-E3/73 1.5KE51CA-E3/73 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 43.6VWM 70.1VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SBYV28-100-E3/73 SBYV28-100-E3/73 Vishay General Semiconductor - Diodes Division sbyv28.pdf Description: DIODE GEN PURP 100V 3.5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
UF5406-E3/73 UF5406-E3/73 Vishay General Semiconductor - Diodes Division uf5400.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1401 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.08 EUR
15+ 1.81 EUR
100+ 1.26 EUR
500+ 1.05 EUR
Mindestbestellmenge: 13
SMCJ8.5CA-E3/57T smcj.pdf
SMCJ8.5CA-E3/57T
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 104.2A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 1736 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.59 EUR
20+ 1.34 EUR
100+ 0.93 EUR
Mindestbestellmenge: 17
UG4D-E3/54 ug4a.pdf
UG4D-E3/54
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 10354 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.51 EUR
20+ 1.3 EUR
100+ 0.9 EUR
500+ 0.71 EUR
Mindestbestellmenge: 18
UH4PDC-M3/86A UH4PBC%2CPCC%2CPDC.pdf
UH4PDC-M3/86A
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 2A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
VB10170C-E3/8W vb10170c.pdf
VB10170C-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO236
Produkt ist nicht verfügbar
VB40170C-E3/8W vb40170c.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 170 V
Produkt ist nicht verfügbar
VS-ETH1506-1-M3 vs-eth1506s-m3.pdf
VS-ETH1506-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETH3006-M3 vs-eth3006-m3.pdf
VS-ETH3006-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 5718 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.03 EUR
50+ 3.23 EUR
100+ 2.66 EUR
500+ 2.25 EUR
1000+ 1.91 EUR
2000+ 1.81 EUR
5000+ 1.74 EUR
Mindestbestellmenge: 7
VS-ETL1506-1-M3 vs-etl1506s-m3.pdf
VS-ETL1506-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETX1506FP-M3 vs-etx1506fpm3.pdf
VS-ETX1506FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
auf Bestellung 1722 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.43 EUR
10+ 2.81 EUR
100+ 2.18 EUR
500+ 1.85 EUR
1000+ 1.51 EUR
Mindestbestellmenge: 8
VS-ETU1506-1-M3 vs-etu1506sm3.pdf
VS-ETU1506-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETL1506FP-M3 vs-etl1506fpm3.pdf
VS-ETL1506FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 817 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.43 EUR
10+ 2.81 EUR
100+ 2.18 EUR
500+ 1.85 EUR
Mindestbestellmenge: 8
VS-6EWH06FNTR-M3 vs-6ewh06fn-m3.pdf
VS-6EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 5676 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.08 EUR
15+ 1.81 EUR
100+ 1.26 EUR
500+ 1.05 EUR
1000+ 0.89 EUR
Mindestbestellmenge: 13
VS-ETH3006FP-M3 vs-eth3006fpm3.pdf
VS-ETH3006FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 30A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 1057 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.06 EUR
50+ 3.26 EUR
100+ 2.68 EUR
500+ 2.27 EUR
1000+ 1.92 EUR
Mindestbestellmenge: 7
VS-ETU3006-M3 vs-etu3006-m3.pdf
VS-ETU3006-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
VS-8S2TH06I-M
VS-8S2TH06I-M
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETL1506-M3 vs-etl1506-m3.pdf
VS-ETL1506-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 14757 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.3 EUR
50+ 2.65 EUR
100+ 2.1 EUR
500+ 1.78 EUR
1000+ 1.45 EUR
2000+ 1.37 EUR
5000+ 1.3 EUR
10000+ 1.24 EUR
Mindestbestellmenge: 8
VS-ETH1506-M3 vs-eth1506-m3.pdf
VS-ETH1506-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETX0806FP-M3 vs-etx0806fpm3.pdf
VS-ETX0806FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 880 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.73 EUR
50+ 2.2 EUR
100+ 1.74 EUR
Mindestbestellmenge: 10
VS-ETL0806FP-M3 vs-etl0806fpm3.pdf
VS-ETL0806FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A
Current - Reverse Leakage @ Vr: 9 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETH0806FP-M3 vs-eth0806fp-m3.pdf
VS-ETH0806FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 8A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
Current - Reverse Leakage @ Vr: 12 µA @ 600 V
auf Bestellung 986 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.73 EUR
12+ 2.23 EUR
100+ 1.74 EUR
500+ 1.47 EUR
Mindestbestellmenge: 10
VS-ETX0806-M3 vs-etx0806-m3.pdf
VS-ETX0806-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 1172 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.52 EUR
50+ 2.03 EUR
100+ 1.61 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 11
VS-ETL0806-M3 vs-etl0806-m3.pdf
VS-ETL0806-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 180 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 8 A
Current - Reverse Leakage @ Vr: 9 µA @ 600 V
auf Bestellung 4489 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.55 EUR
50+ 2.05 EUR
100+ 1.62 EUR
500+ 1.38 EUR
1000+ 1.12 EUR
2000+ 1.06 EUR
Mindestbestellmenge: 11
VS-ETH0806-M3 vs-eth0806m3.pdf
VS-ETH0806-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
Current - Reverse Leakage @ Vr: 12 µA @ 600 V
auf Bestellung 4553 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.52 EUR
13+ 2.06 EUR
100+ 1.6 EUR
500+ 1.36 EUR
1000+ 1.11 EUR
2000+ 1.04 EUR
Mindestbestellmenge: 11
VS-ETU3006-1-M3 vs-etu3006s-m3.pdf
VS-ETU3006-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
VS-EPH3006-N3 vs-aph3006n3.pdf
VS-EPH3006-N3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AC Modified
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 425 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13.91 EUR
25+ 11.01 EUR
100+ 9.44 EUR
Mindestbestellmenge: 2
VS-5EWH06FNTR-M3 vs-5ewh06fn-m3.pdf
VS-5EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 46000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+0.76 EUR
6000+ 0.72 EUR
10000+ 0.67 EUR
Mindestbestellmenge: 2000
VS-ETH3006-1-M3 vs-eth3006s-m3.pdf
VS-ETH3006-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETU3006FP-M3 vs-etu3006fpm3.pdf
VS-ETU3006FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 30A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 2937 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.06 EUR
50+ 3.26 EUR
100+ 2.68 EUR
500+ 2.27 EUR
1000+ 1.92 EUR
2000+ 1.83 EUR
Mindestbestellmenge: 7
VS-ETU1506FP-M3 vs-etu1506fpm3.pdf
VS-ETU1506FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 71 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.43 EUR
10+ 2.81 EUR
Mindestbestellmenge: 8
VS-ETH1506FP-M3 vs-eth1506fpm3.pdf
VS-ETH1506FP-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 15A TO220-2FP
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2 Full Pack
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 1411 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.48 EUR
50+ 2.79 EUR
100+ 2.21 EUR
500+ 1.87 EUR
1000+ 1.53 EUR
Mindestbestellmenge: 8
VS-ETX1506-M3 vs-etx1506-m3.pdf
VS-ETX1506-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETX1506-1-M3 vs-etx1506s-m3.pdf
VS-ETX1506-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-262-3
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETH3006S-M3 vs-eth3006s-m3.pdf
VS-ETH3006S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 26 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 30 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.34 EUR
50+ 3.5 EUR
100+ 2.88 EUR
500+ 2.44 EUR
1000+ 2.07 EUR
2000+ 1.96 EUR
Mindestbestellmenge: 6
VS-15EWX06FNTR-M3 vs-15ewx06fn-m3.pdf
VS-15EWX06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 26000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+1.24 EUR
6000+ 1.18 EUR
10000+ 1.13 EUR
Mindestbestellmenge: 2000
VS-ETU3006S-M3 vs-etu3006s-m3.pdf
VS-ETU3006S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 30A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 70 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 4680 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.37 EUR
50+ 3.5 EUR
100+ 2.88 EUR
500+ 2.44 EUR
1000+ 2.07 EUR
2000+ 1.97 EUR
Mindestbestellmenge: 6
VS-ETX1506S-M3 vs-etx1506s-m3.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 15 A
Current - Reverse Leakage @ Vr: 36 µA @ 600 V
Produkt ist nicht verfügbar
VS-ETL1506S-M3 vs-etl1506s-m3.pdf
VS-ETL1506S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 210 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 4503 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.61 EUR
10+ 2.96 EUR
100+ 2.3 EUR
500+ 1.95 EUR
1000+ 1.59 EUR
2000+ 1.49 EUR
Mindestbestellmenge: 8
VS-ETH1506S-M3 vs-eth1506s-m3.pdf
VS-ETH1506S-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.45 V @ 15 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 6827 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.72 EUR
10+ 3.04 EUR
100+ 2.37 EUR
500+ 2.01 EUR
1000+ 1.63 EUR
2000+ 1.54 EUR
5000+ 1.47 EUR
Mindestbestellmenge: 7
VS-5EWH06FNTR-M3 vs-5ewh06fn-m3.pdf
VS-5EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 46206 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.03 EUR
15+ 1.74 EUR
100+ 1.21 EUR
500+ 1.01 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 13
VS-15EWH06FNTR-M3 vs-15ewh06fn-m3.pdf
VS-15EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+1.24 EUR
Mindestbestellmenge: 2000
VS-15EWH06FNTR-M3 vs-15ewh06fn-m3.pdf
VS-15EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 15 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 6294 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.99 EUR
11+ 2.45 EUR
100+ 1.91 EUR
500+ 1.62 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 9
VS-15EWL06FNTR-M3 vs-15ewl06fn-m3.pdf
VS-15EWL06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 20473 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.99 EUR
11+ 2.45 EUR
100+ 1.91 EUR
500+ 1.62 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 9
VS-15EWX06FNTR-M3 vs-15ewx06fn-m3.pdf
VS-15EWX06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 29215 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.99 EUR
11+ 2.45 EUR
100+ 1.91 EUR
500+ 1.62 EUR
1000+ 1.32 EUR
Mindestbestellmenge: 9
VS-8EWL06FNTR-M3 vs-8ewl06fn-m3.pdf
VS-8EWL06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 3423 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.5 EUR
13+ 2.03 EUR
100+ 1.58 EUR
500+ 1.34 EUR
1000+ 1.09 EUR
Mindestbestellmenge: 11
VS-8EWX06FNTR-M3 vs-8ewx06fn-m3.pdf
VS-8EWX06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DPAK
auf Bestellung 39 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.6 EUR
12+ 2.31 EUR
Mindestbestellmenge: 10
VS-6EWH06FNTR-M3 vs-6ewh06fn-m3.pdf
VS-6EWH06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+0.8 EUR
Mindestbestellmenge: 2000
VS-8EWX06FNTR-M3 vs-8ewx06fn-m3.pdf
VS-8EWX06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DPAK
Produkt ist nicht verfügbar
VS-8EWL06FNTR-M3 vs-8ewl06fn-m3.pdf
VS-8EWL06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 170 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 3423 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+1.02 EUR
Mindestbestellmenge: 2000
VS-15EWL06FNTR-M3 vs-15ewl06fn-m3.pdf
VS-15EWL06FNTR-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 220 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2000+1.24 EUR
6000+ 1.18 EUR
10000+ 1.13 EUR
Mindestbestellmenge: 2000
VS-8ETX06SPBF VS-8ETX06SPbF_VS-8ETX06-1PbF.pdf
VS-8ETX06SPBF
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A TO263AB
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 17 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Produkt ist nicht verfügbar
V40170C-M3/4W v40170c-m3.pdf
V40170C-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO220
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
VB60170G-E3/8W vb60170g.pdf
VB60170G-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 170V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 170 V
auf Bestellung 5600 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+3.44 EUR
1600+ 2.92 EUR
2400+ 2.77 EUR
5600+ 2.67 EUR
Mindestbestellmenge: 800
VB60170G-E3/8W vb60170g.pdf
VB60170G-E3/8W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 170V 30A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 170 V
auf Bestellung 5941 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.14 EUR
10+ 5.11 EUR
100+ 4.06 EUR
Mindestbestellmenge: 5
V40170PW-M3/4W V40170PW-M3.pdf
V40170PW-M3/4W
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 170V TO3PW
Produkt ist nicht verfügbar
VS-15EWX06FN-M3 vs-15ewx06fn-m3.pdf
VS-15EWX06FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 15A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
auf Bestellung 736 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.99 EUR
75+ 2.41 EUR
150+ 1.91 EUR
525+ 1.62 EUR
Mindestbestellmenge: 9
VS-6EWX06FN-M3 vs-6ewx06fn-m3.pdf
VS-6EWX06FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A DPAK
Produkt ist nicht verfügbar
VS-5EWX06FN-M3 vs-5ewx06fn-m3.pdf
VS-5EWX06FN-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.9 V @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
auf Bestellung 2940 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.03 EUR
75+ 1.66 EUR
150+ 1.21 EUR
525+ 1.01 EUR
1050+ 0.86 EUR
2025+ 0.76 EUR
Mindestbestellmenge: 13
1.5KE51CA-E3/73 15ke.pdf
1.5KE51CA-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43.6VWM 70.1VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.4A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
SBYV28-100-E3/73 sbyv28.pdf
SBYV28-100-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 3.5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Produkt ist nicht verfügbar
UF5406-E3/73 uf5400.pdf
UF5406-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 1401 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.08 EUR
15+ 1.81 EUR
100+ 1.26 EUR
500+ 1.05 EUR
Mindestbestellmenge: 13
Wählen Sie Seite:   [  << Vorherige Seite ]  1 60 120 174 175 176 177 178 179 180 181 182 183 184 240 300 360 420 480 540 600 607  [ Nächste Seite >> ]