| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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SIRA18ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24.5A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 24.5A Pulsed drain current: 70A Power dissipation: 9.4W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2777 Stücke: Lieferzeit 7-14 Tag (e) |
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SIRA28BDP-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 90A; 11W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 90A Power dissipation: 11W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2992 Stücke: Lieferzeit 7-14 Tag (e) |
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SIRA52ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 105A Pulsed drain current: 200A Power dissipation: 30.7W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2985 Stücke: Lieferzeit 7-14 Tag (e) |
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SIRA90DP-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 400A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 1.15mΩ Mounting: SMD Gate charge: 153nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2417 Stücke: Lieferzeit 7-14 Tag (e) |
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SIRA99DP-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -156A; Idm: -400A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -156A Pulsed drain current: -400A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: -20...16V On-state resistance: 2.65mΩ Mounting: SMD Gate charge: 260nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2438 Stücke: Lieferzeit 7-14 Tag (e) |
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| SiRC16DP-T1-GE3 | VISHAY |
SIRC16DP-T1-GE3 SMD N channel transistors |
auf Bestellung 2943 Stücke: Lieferzeit 7-14 Tag (e) |
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| SiS406DN-T1-GE3 | VISHAY |
SIS406DN-T1-GE3 SMD N channel transistors |
auf Bestellung 2982 Stücke: Lieferzeit 7-14 Tag (e) |
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| SIS412DN-T1-GE3 | VISHAY |
SIS412DN-T1-GE3 SMD N channel transistors |
auf Bestellung 2916 Stücke: Lieferzeit 7-14 Tag (e) |
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SIS413DN-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A Kind of channel: enhancement Case: PowerPAK® 1212-8 Technology: TrenchFET® Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: -70A Drain-source voltage: -30V Drain current: -18A Gate charge: 110nC On-state resistance: 13.2mΩ Power dissipation: 33W Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3167 Stücke: Lieferzeit 7-14 Tag (e) |
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| SIS443DN-T1-GE3 | VISHAY |
SIS443DN-T1-GE3 SMD P channel transistors |
auf Bestellung 1779 Stücke: Lieferzeit 7-14 Tag (e) |
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| SIS892ADN-T1-GE3 | VISHAY |
SIS892ADN-T1-GE3 SMD N channel transistors |
auf Bestellung 2842 Stücke: Lieferzeit 7-14 Tag (e) |
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| SISH625DN-T1-GE3 | VISHAY |
SISH625DN-T1-GE3 SMD P channel transistors |
auf Bestellung 5173 Stücke: Lieferzeit 7-14 Tag (e) |
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SISS05DN-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -86.6A; 42W Technology: TrenchFET® Pulsed drain current: -300A Drain current: -86.6A Drain-source voltage: -30V Gate-source voltage: -20...16V Gate charge: 115nC On-state resistance: 5.8mΩ Power dissipation: 42W Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: PowerPAK® 1212-8 Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2497 Stücke: Lieferzeit 7-14 Tag (e) |
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| SISS23DN-T1-GE3 | VISHAY |
SISS23DN-T1-GE3 SMD P channel transistors |
auf Bestellung 8495 Stücke: Lieferzeit 7-14 Tag (e) |
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SISS61DN-T1-GE3 | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerPAK® 1212-8 Technology: TrenchFET® Polarisation: unipolar Pulsed drain current: -200A Drain current: -89.6A Drain-source voltage: -20V Gate charge: 231nC On-state resistance: 9.8mΩ Gate-source voltage: ±8V Power dissipation: 42.1W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5708 Stücke: Lieferzeit 7-14 Tag (e) |
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SISS80DN-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 42W Case: PowerPAK® 1212-8 Mounting: SMD Kind of package: reel; tape Technology: TrenchFET® Gate-source voltage: -8...12V Gate charge: 122nC On-state resistance: 3mΩ Drain current: 169A Drain-source voltage: 20V Pulsed drain current: 300A Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5944 Stücke: Lieferzeit 7-14 Tag (e) |
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| SIUD401ED-T1-GE3 | VISHAY |
SIUD401ED-T1-GE3 SMD P channel transistors |
auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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| SL02-GS08 | VISHAY |
SL02-GS08 SMD Schottky diodes |
auf Bestellung 1527 Stücke: Lieferzeit 7-14 Tag (e) |
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SL03-GS08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO219AB; SMD; 20V; 1.1A; 7 inch reel Type of diode: Schottky rectifying Case: DO219AB Mounting: SMD Max. off-state voltage: 20V Load current: 1.1A Semiconductor structure: single diode Max. forward voltage: 0.45V Max. forward impulse current: 40A Kind of package: 7 inch reel Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22209 Stücke: Lieferzeit 7-14 Tag (e) |
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| SL04-E3-08 | VISHAY |
SL04-E3-08 SMD Schottky diodes |
auf Bestellung 907 Stücke: Lieferzeit 7-14 Tag (e) |
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| SL12-E3/61T | VISHAY |
SL12-E3/61T SMD Schottky diodes |
auf Bestellung 2642 Stücke: Lieferzeit 7-14 Tag (e) |
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SL23-E3/52T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; 7 inch reel; 750pcs. Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Kind of package: 7 inch reel Max. forward voltage: 0.32V Load current: 2A Max. off-state voltage: 30V Max. forward impulse current: 100A Quantity in set/package: 750pcs. Case: SMB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1177 Stücke: Lieferzeit 7-14 Tag (e) |
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SL43-E3/57T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; 7 inch reel; 850pcs. Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 30V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.47V Max. forward impulse current: 150A Kind of package: 7 inch reel Quantity in set/package: 850pcs. Anzahl je Verpackung: 1 Stücke |
auf Bestellung 834 Stücke: Lieferzeit 7-14 Tag (e) |
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SL44-E3/57T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 4A; 7 inch reel; 850pcs. Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.44V Max. forward impulse current: 150A Kind of package: 7 inch reel Quantity in set/package: 850pcs. Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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SL44-E3/57T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 4A; 7 inch reel; 850pcs. Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.44V Max. forward impulse current: 150A Kind of package: 7 inch reel Quantity in set/package: 850pcs. Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11 Stücke: Lieferzeit 7-14 Tag (e) |
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| SM15T33A-E3/57T | VISHAY |
SM15T33A-E3/57T Unidirectional TVS SMD diodes |
auf Bestellung 1188 Stücke: Lieferzeit 7-14 Tag (e) |
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| SM15T33CA-E3/57T | VISHAY |
SM15T33CA-E3/57T Bidirectional TVS SMD diodes |
auf Bestellung 585 Stücke: Lieferzeit 7-14 Tag (e) |
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SM6T100A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 85.5V Breakdown voltage: 100V Max. forward impulse current: 4.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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SM6T12A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 12V; 36A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 36A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: 7 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 372 Stücke: Lieferzeit 7-14 Tag (e) |
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SM6T15A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 15V; 28A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated Manufacturer series: SM6T Anzahl je Verpackung: 1 Stücke |
auf Bestellung 293 Stücke: Lieferzeit 7-14 Tag (e) |
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SM6T15CA-E3/52 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; TransZorb®; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 28A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
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SM6T33A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated Manufacturer series: SM6T Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2357 Stücke: Lieferzeit 7-14 Tag (e) |
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SM6T36A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 264 Stücke: Lieferzeit 7-14 Tag (e) |
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SM6T36CA-E3/52 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; TransZorb®; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3339 Stücke: Lieferzeit 7-14 Tag (e) |
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SM6T39A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2256 Stücke: Lieferzeit 7-14 Tag (e) |
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SM6T6V8A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 57A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1mA Kind of package: 7 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3315 Stücke: Lieferzeit 7-14 Tag (e) |
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SM6T6V8CA-E3/52 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.8V; 57A; bidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 57A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1mA Kind of package: 7 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4090 Stücke: Lieferzeit 7-14 Tag (e) |
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SM8S33AHE3_A/I | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5.2kW; 36.7V; 124A; unidirectional; DO218AB; PAR® Type of diode: TVS Peak pulse power dissipation: 5.2kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 124A Semiconductor structure: unidirectional Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: 13 inch reel; tape Technology: PAR® Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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SM8S36ATHE3/I | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5.2kW; 40V; 114A; unidirectional; DO218AC; PAR® Case: DO218AC Technology: PAR® Mounting: SMD Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 10µA Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 114A Peak pulse power dissipation: 5.2kW Kind of package: 13 inch reel; tape Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 440 Stücke: Lieferzeit 7-14 Tag (e) |
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| SMA6J18A-E3/61 | VISHAY |
SMA6J18A-E3/61 Unidirectional TVS SMD diodes |
auf Bestellung 2313 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ10A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 11.1V; 23.5A; unidirectional; SMA; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4202 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ10CA-E3/61 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 11.7V; 23.5A; bidirectional; SMA; TransZorb®; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 23.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 806 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ12A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 13.3V; 20.1A; unidirectional; SMA; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2091 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ12CA-E3/61 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 13.3V; 20.1A; bidirectional; SMA; TransZorb®; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 20.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1726 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ13A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 14.4V; 18.6A; unidirectional; SMA; TransZorb® Manufacturer series: SMAJ Mounting: SMD Case: SMA Features of semiconductor devices: glass passivated Technology: TransZorb® Type of diode: TVS Leakage current: 1µA Max. off-state voltage: 13V Breakdown voltage: 14.4V Max. forward impulse current: 18.6A Peak pulse power dissipation: 0.3kW Kind of package: 7 inch reel; tape Semiconductor structure: unidirectional Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2250 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ15A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3484 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ15CA-E3/61 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 17.6V; 16.4A; bidirectional; SMA; TransZorb®; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1780 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ170CA-E3/61 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 189V; 1.09A; bidirectional; SMA; 7 inch reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 170V Breakdown voltage: 189V Max. forward impulse current: 1.09A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1276 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ18A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 20V; 13.7A; unidirectional; SMA; 7 inch reel,tape Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 18V Breakdown voltage: 20V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1641 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ18CA-E3/61 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 20V; 13.7A; bidirectional; SMA; 7 inch reel,tape Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 18V Breakdown voltage: 20V Max. forward impulse current: 13.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3664 Stücke: Lieferzeit 7-14 Tag (e) |
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| SMAJ22A-E3/61 | VISHAY |
SMAJ22A-E3/61 Unidirectional TVS SMD diodes |
auf Bestellung 582 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ24A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 28.1V; 10.3A; unidirectional; SMA; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3262 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ24CA-E3/61 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 28.1V; 10.3A; bidirectional; SMA; TransZorb®; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 24V Breakdown voltage: 28.1V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1535 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ26A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 30.4V; 9.5A; unidirectional; SMA; TransZorb®; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 26V Breakdown voltage: 30.4V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Technology: TransZorb® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4159 Stücke: Lieferzeit 7-14 Tag (e) |
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| SMAJ26CA-E3/5A | VISHAY |
SMAJ26CA-E3/5A Bidirectional TVS SMD diodes |
auf Bestellung 605 Stücke: Lieferzeit 7-14 Tag (e) |
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| SMAJ26CA-E3/61 | VISHAY |
SMAJ26CA-E3/61 Bidirectional TVS SMD diodes |
auf Bestellung 1628 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ28A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 31.1V; 8.8A; unidirectional; SMA; TransZorb®; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Features of semiconductor devices: glass passivated Technology: TransZorb® Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4215 Stücke: Lieferzeit 7-14 Tag (e) |
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| SMAJ28CA-E3/61 | VISHAY |
SMAJ28CA-E3/61 Bidirectional TVS SMD diodes |
auf Bestellung 3799 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ30A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 35.05V; 8.3A; unidirectional; SMA; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 30V Breakdown voltage: 35.05V Max. forward impulse current: 8.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2734 Stücke: Lieferzeit 7-14 Tag (e) |
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SMAJ30CA-E3/61 | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 300W; 33.3V; 8.3A; bidirectional; SMA; 7 inch reel,tape Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1779 Stücke: Lieferzeit 7-14 Tag (e) |
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| SIRA18ADP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24.5A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24.5A
Pulsed drain current: 70A
Power dissipation: 9.4W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24.5A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24.5A
Pulsed drain current: 70A
Power dissipation: 9.4W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2777 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 155+ | 0.46 EUR |
| 174+ | 0.41 EUR |
| 261+ | 0.27 EUR |
| 500+ | 0.24 EUR |
| SIRA28BDP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 90A; 11W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 90A
Power dissipation: 11W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 90A; 11W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 90A
Power dissipation: 11W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2992 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 161+ | 0.45 EUR |
| 175+ | 0.41 EUR |
| 216+ | 0.33 EUR |
| 500+ | 0.3 EUR |
| SIRA52ADP-T1-RE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 200A
Power dissipation: 30.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 105A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 105A
Pulsed drain current: 200A
Power dissipation: 30.7W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2985 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 45+ | 1.6 EUR |
| 52+ | 1.39 EUR |
| 57+ | 1.27 EUR |
| 65+ | 1.12 EUR |
| 100+ | 1.04 EUR |
| SIRA90DP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -16...20V
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 153nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2417 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 37+ | 1.94 EUR |
| 50+ | 1.46 EUR |
| 63+ | 1.14 EUR |
| 100+ | 1.04 EUR |
| 250+ | 0.92 EUR |
| 500+ | 0.86 EUR |
| SIRA99DP-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -156A; Idm: -400A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -156A
Pulsed drain current: -400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -20...16V
On-state resistance: 2.65mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -156A; Idm: -400A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -156A
Pulsed drain current: -400A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: -20...16V
On-state resistance: 2.65mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2438 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.55 EUR |
| 25+ | 2.97 EUR |
| 28+ | 2.65 EUR |
| 33+ | 2.23 EUR |
| 100+ | 1.8 EUR |
| SiRC16DP-T1-GE3 |
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Hersteller: VISHAY
SIRC16DP-T1-GE3 SMD N channel transistors
SIRC16DP-T1-GE3 SMD N channel transistors
auf Bestellung 2943 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.86 EUR |
| 68+ | 1.06 EUR |
| 72+ | 1 EUR |
| SiS406DN-T1-GE3 |
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Hersteller: VISHAY
SIS406DN-T1-GE3 SMD N channel transistors
SIS406DN-T1-GE3 SMD N channel transistors
auf Bestellung 2982 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 92+ | 0.79 EUR |
| 106+ | 0.68 EUR |
| 112+ | 0.64 EUR |
| 114+ | 0.63 EUR |
| SIS412DN-T1-GE3 |
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Hersteller: VISHAY
SIS412DN-T1-GE3 SMD N channel transistors
SIS412DN-T1-GE3 SMD N channel transistors
auf Bestellung 2916 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 152+ | 0.47 EUR |
| 161+ | 0.45 EUR |
| 166+ | 0.43 EUR |
| SIS413DN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A
Kind of channel: enhancement
Case: PowerPAK® 1212-8
Technology: TrenchFET®
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -70A
Drain-source voltage: -30V
Drain current: -18A
Gate charge: 110nC
On-state resistance: 13.2mΩ
Power dissipation: 33W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -18A; Idm: -70A
Kind of channel: enhancement
Case: PowerPAK® 1212-8
Technology: TrenchFET®
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: -70A
Drain-source voltage: -30V
Drain current: -18A
Gate charge: 110nC
On-state resistance: 13.2mΩ
Power dissipation: 33W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3167 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 102+ | 0.7 EUR |
| 211+ | 0.34 EUR |
| 223+ | 0.32 EUR |
| 1000+ | 0.31 EUR |
| SIS443DN-T1-GE3 |
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Hersteller: VISHAY
SIS443DN-T1-GE3 SMD P channel transistors
SIS443DN-T1-GE3 SMD P channel transistors
auf Bestellung 1779 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 76+ | 0.94 EUR |
| 80+ | 0.9 EUR |
| 1000+ | 0.86 EUR |
| SIS892ADN-T1-GE3 |
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Hersteller: VISHAY
SIS892ADN-T1-GE3 SMD N channel transistors
SIS892ADN-T1-GE3 SMD N channel transistors
auf Bestellung 2842 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 50+ | 1.44 EUR |
| 104+ | 0.69 EUR |
| 110+ | 0.65 EUR |
| 1000+ | 0.63 EUR |
| SISH625DN-T1-GE3 |
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Hersteller: VISHAY
SISH625DN-T1-GE3 SMD P channel transistors
SISH625DN-T1-GE3 SMD P channel transistors
auf Bestellung 5173 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.05 EUR |
| 148+ | 0.49 EUR |
| 156+ | 0.46 EUR |
| SISS05DN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -86.6A; 42W
Technology: TrenchFET®
Pulsed drain current: -300A
Drain current: -86.6A
Drain-source voltage: -30V
Gate-source voltage: -20...16V
Gate charge: 115nC
On-state resistance: 5.8mΩ
Power dissipation: 42W
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -86.6A; 42W
Technology: TrenchFET®
Pulsed drain current: -300A
Drain current: -86.6A
Drain-source voltage: -30V
Gate-source voltage: -20...16V
Gate charge: 115nC
On-state resistance: 5.8mΩ
Power dissipation: 42W
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2497 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 61+ | 1.17 EUR |
| 68+ | 1.06 EUR |
| 100+ | 1.04 EUR |
| SISS23DN-T1-GE3 |
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Hersteller: VISHAY
SISS23DN-T1-GE3 SMD P channel transistors
SISS23DN-T1-GE3 SMD P channel transistors
auf Bestellung 8495 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 159+ | 0.45 EUR |
| 168+ | 0.43 EUR |
| 1500+ | 0.42 EUR |
| SISS61DN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerPAK® 1212-8
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -89.6A
Drain-source voltage: -20V
Gate charge: 231nC
On-state resistance: 9.8mΩ
Gate-source voltage: ±8V
Power dissipation: 42.1W
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -89.6A; 42.1W
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: PowerPAK® 1212-8
Technology: TrenchFET®
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -89.6A
Drain-source voltage: -20V
Gate charge: 231nC
On-state resistance: 9.8mΩ
Gate-source voltage: ±8V
Power dissipation: 42.1W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5708 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.37 EUR |
| 77+ | 0.93 EUR |
| 111+ | 0.65 EUR |
| 250+ | 0.57 EUR |
| 500+ | 0.54 EUR |
| SISS80DN-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Gate-source voltage: -8...12V
Gate charge: 122nC
On-state resistance: 3mΩ
Drain current: 169A
Drain-source voltage: 20V
Pulsed drain current: 300A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 169A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 42W
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Gate-source voltage: -8...12V
Gate charge: 122nC
On-state resistance: 3mΩ
Drain current: 169A
Drain-source voltage: 20V
Pulsed drain current: 300A
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5944 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 60+ | 1.2 EUR |
| 100+ | 1.06 EUR |
| SIUD401ED-T1-GE3 |
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Hersteller: VISHAY
SIUD401ED-T1-GE3 SMD P channel transistors
SIUD401ED-T1-GE3 SMD P channel transistors
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 140+ | 0.51 EUR |
| 538+ | 0.13 EUR |
| SL02-GS08 |
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Hersteller: VISHAY
SL02-GS08 SMD Schottky diodes
SL02-GS08 SMD Schottky diodes
auf Bestellung 1527 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 307+ | 0.23 EUR |
| 715+ | 0.1 EUR |
| 758+ | 0.094 EUR |
| 30000+ | 0.092 EUR |
| SL03-GS08 |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO219AB; SMD; 20V; 1.1A; 7 inch reel
Type of diode: Schottky rectifying
Case: DO219AB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1.1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO219AB; SMD; 20V; 1.1A; 7 inch reel
Type of diode: Schottky rectifying
Case: DO219AB
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1.1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Anzahl je Verpackung: 1 Stücke
auf Bestellung 22209 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 242+ | 0.3 EUR |
| 350+ | 0.2 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| SL04-E3-08 |
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Hersteller: VISHAY
SL04-E3-08 SMD Schottky diodes
SL04-E3-08 SMD Schottky diodes
auf Bestellung 907 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 151+ | 0.48 EUR |
| 685+ | 0.1 EUR |
| 725+ | 0.099 EUR |
| SL12-E3/61T |
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Hersteller: VISHAY
SL12-E3/61T SMD Schottky diodes
SL12-E3/61T SMD Schottky diodes
auf Bestellung 2642 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 175+ | 0.41 EUR |
| 280+ | 0.26 EUR |
| 296+ | 0.24 EUR |
| 313+ | 0.23 EUR |
| SL23-E3/52T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.32V
Load current: 2A
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Quantity in set/package: 750pcs.
Case: SMB
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; 7 inch reel; 750pcs.
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Kind of package: 7 inch reel
Max. forward voltage: 0.32V
Load current: 2A
Max. off-state voltage: 30V
Max. forward impulse current: 100A
Quantity in set/package: 750pcs.
Case: SMB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1177 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 229+ | 0.31 EUR |
| 271+ | 0.26 EUR |
| 290+ | 0.25 EUR |
| 500+ | 0.23 EUR |
| 750+ | 0.22 EUR |
| 1500+ | 0.21 EUR |
| SL43-E3/57T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; 7 inch reel; 850pcs.
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 150A
Kind of package: 7 inch reel
Quantity in set/package: 850pcs.
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 4A; 7 inch reel; 850pcs.
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 30V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 150A
Kind of package: 7 inch reel
Quantity in set/package: 850pcs.
Anzahl je Verpackung: 1 Stücke
auf Bestellung 834 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.16 EUR |
| 67+ | 1.07 EUR |
| SL44-E3/57T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 4A; 7 inch reel; 850pcs.
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 150A
Kind of package: 7 inch reel
Quantity in set/package: 850pcs.
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 4A; 7 inch reel; 850pcs.
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 150A
Kind of package: 7 inch reel
Quantity in set/package: 850pcs.
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.51 EUR |
| 25+ | 2.86 EUR |
| 100+ | 0.72 EUR |
| SL44-E3/57T |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 4A; 7 inch reel; 850pcs.
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 150A
Kind of package: 7 inch reel
Quantity in set/package: 850pcs.
Anzahl je Verpackung: 1 Stücke
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 4A; 7 inch reel; 850pcs.
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 150A
Kind of package: 7 inch reel
Quantity in set/package: 850pcs.
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.51 EUR |
| 25+ | 2.86 EUR |
| 100+ | 0.72 EUR |
| SM15T33A-E3/57T |
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Hersteller: VISHAY
SM15T33A-E3/57T Unidirectional TVS SMD diodes
SM15T33A-E3/57T Unidirectional TVS SMD diodes
auf Bestellung 1188 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 149+ | 0.48 EUR |
| 286+ | 0.25 EUR |
| 304+ | 0.24 EUR |
| SM15T33CA-E3/57T |
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Hersteller: VISHAY
SM15T33CA-E3/57T Bidirectional TVS SMD diodes
SM15T33CA-E3/57T Bidirectional TVS SMD diodes
auf Bestellung 585 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 283+ | 0.25 EUR |
| 298+ | 0.24 EUR |
| SM6T100A-E3/52 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 100V; 4.4A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 85.5V
Breakdown voltage: 100V
Max. forward impulse current: 4.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 4.76 EUR |
| 100+ | 0.72 EUR |
| 750+ | 0.11 EUR |
| 5250+ | 0.099 EUR |
| SM6T12A-E3/52 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 12V; 36A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 372 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 372+ | 0.19 EUR |
| 750+ | 0.096 EUR |
| SM6T15A-E3/52 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: SM6T
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: SM6T
Anzahl je Verpackung: 1 Stücke
auf Bestellung 293 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 0.39 EUR |
| 222+ | 0.32 EUR |
| 247+ | 0.29 EUR |
| 293+ | 0.24 EUR |
| 500+ | 0.14 EUR |
| SM6T15CA-E3/52 |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; TransZorb®; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 28A; bidirectional; ±5%; SMB; TransZorb®; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 35+ | 2.04 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.14 EUR |
| 750+ | 0.1 EUR |
| 1500+ | 0.083 EUR |
| SM6T33A-E3/52 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: SM6T
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: SM6T
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2357 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 257+ | 0.28 EUR |
| 298+ | 0.24 EUR |
| 341+ | 0.21 EUR |
| 388+ | 0.18 EUR |
| 472+ | 0.15 EUR |
| 544+ | 0.13 EUR |
| SM6T36A-E3/52 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 264 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 500+ | 0.14 EUR |
| 750+ | 0.11 EUR |
| SM6T36CA-E3/52 |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; TransZorb®; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; bidirectional; ±5%; SMB; TransZorb®; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3339 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 0.44 EUR |
| 281+ | 0.25 EUR |
| 302+ | 0.24 EUR |
| 385+ | 0.19 EUR |
| 500+ | 0.16 EUR |
| 750+ | 0.15 EUR |
| 1500+ | 0.14 EUR |
| SM6T39A-E3/52 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.1A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2256 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 174+ | 0.41 EUR |
| 199+ | 0.36 EUR |
| 345+ | 0.21 EUR |
| 551+ | 0.13 EUR |
| 750+ | 0.11 EUR |
| 1500+ | 0.089 EUR |
| SM6T6V8A-E3/52 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3315 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 491+ | 0.15 EUR |
| 506+ | 0.14 EUR |
| 562+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| 633+ | 0.11 EUR |
| SM6T6V8CA-E3/52 |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; bidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.8V; 57A; bidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 57A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1mA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4090 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 336+ | 0.21 EUR |
| 394+ | 0.18 EUR |
| 500+ | 0.16 EUR |
| 750+ | 0.14 EUR |
| 1500+ | 0.11 EUR |
| 2250+ | 0.094 EUR |
| SM8S33AHE3_A/I |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5.2kW; 36.7V; 124A; unidirectional; DO218AB; PAR®
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 124A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: 13 inch reel; tape
Technology: PAR®
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5.2kW; 36.7V; 124A; unidirectional; DO218AB; PAR®
Type of diode: TVS
Peak pulse power dissipation: 5.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 124A
Semiconductor structure: unidirectional
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: 13 inch reel; tape
Technology: PAR®
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.42 EUR |
| 50+ | 2.86 EUR |
| 100+ | 2.57 EUR |
| 250+ | 2.19 EUR |
| 500+ | 1.97 EUR |
| SM8S36ATHE3/I |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5.2kW; 40V; 114A; unidirectional; DO218AC; PAR®
Case: DO218AC
Technology: PAR®
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 10µA
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 114A
Peak pulse power dissipation: 5.2kW
Kind of package: 13 inch reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5.2kW; 40V; 114A; unidirectional; DO218AC; PAR®
Case: DO218AC
Technology: PAR®
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 10µA
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 114A
Peak pulse power dissipation: 5.2kW
Kind of package: 13 inch reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 440 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.68 EUR |
| 22+ | 3.3 EUR |
| 25+ | 2.93 EUR |
| 100+ | 2.63 EUR |
| SMA6J18A-E3/61 |
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Hersteller: VISHAY
SMA6J18A-E3/61 Unidirectional TVS SMD diodes
SMA6J18A-E3/61 Unidirectional TVS SMD diodes
auf Bestellung 2313 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 185+ | 0.39 EUR |
| 368+ | 0.19 EUR |
| 391+ | 0.18 EUR |
| SMAJ10A-E3/61 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 11.1V; 23.5A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 11.1V; 23.5A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4202 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 269+ | 0.27 EUR |
| 327+ | 0.22 EUR |
| 834+ | 0.086 EUR |
| SMAJ10CA-E3/61 |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 11.7V; 23.5A; bidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 11.7V; 23.5A; bidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 806 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 285+ | 0.25 EUR |
| 319+ | 0.22 EUR |
| 358+ | 0.2 EUR |
| 428+ | 0.17 EUR |
| 491+ | 0.15 EUR |
| 562+ | 0.13 EUR |
| SMAJ12A-E3/61 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 13.3V; 20.1A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 13.3V; 20.1A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2091 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 334+ | 0.21 EUR |
| 385+ | 0.19 EUR |
| 474+ | 0.15 EUR |
| 663+ | 0.11 EUR |
| 827+ | 0.087 EUR |
| 930+ | 0.077 EUR |
| SMAJ12CA-E3/61 |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 13.3V; 20.1A; bidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 13.3V; 20.1A; bidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 20.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1726 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 329+ | 0.22 EUR |
| 391+ | 0.18 EUR |
| 511+ | 0.14 EUR |
| 705+ | 0.1 EUR |
| 807+ | 0.089 EUR |
| 848+ | 0.084 EUR |
| SMAJ13A-E3/61 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 14.4V; 18.6A; unidirectional; SMA; TransZorb®
Manufacturer series: SMAJ
Mounting: SMD
Case: SMA
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Type of diode: TVS
Leakage current: 1µA
Max. off-state voltage: 13V
Breakdown voltage: 14.4V
Max. forward impulse current: 18.6A
Peak pulse power dissipation: 0.3kW
Kind of package: 7 inch reel; tape
Semiconductor structure: unidirectional
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 14.4V; 18.6A; unidirectional; SMA; TransZorb®
Manufacturer series: SMAJ
Mounting: SMD
Case: SMA
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Type of diode: TVS
Leakage current: 1µA
Max. off-state voltage: 13V
Breakdown voltage: 14.4V
Max. forward impulse current: 18.6A
Peak pulse power dissipation: 0.3kW
Kind of package: 7 inch reel; tape
Semiconductor structure: unidirectional
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2250 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 439+ | 0.16 EUR |
| 610+ | 0.12 EUR |
| 747+ | 0.096 EUR |
| 1000+ | 0.092 EUR |
| 1800+ | 0.084 EUR |
| 3600+ | 0.083 EUR |
| SMAJ15A-E3/61 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3484 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 410+ | 0.17 EUR |
| 521+ | 0.14 EUR |
| 633+ | 0.11 EUR |
| 774+ | 0.092 EUR |
| 1000+ | 0.073 EUR |
| 1800+ | 0.066 EUR |
| SMAJ15CA-E3/61 |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 17.6V; 16.4A; bidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 17.6V; 16.4A; bidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1780 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 264+ | 0.27 EUR |
| 345+ | 0.21 EUR |
| 368+ | 0.19 EUR |
| 400+ | 0.18 EUR |
| 506+ | 0.14 EUR |
| 650+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
| SMAJ170CA-E3/61 |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 189V; 1.09A; bidirectional; SMA; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.09A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 189V; 1.09A; bidirectional; SMA; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189V
Max. forward impulse current: 1.09A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1276 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 239+ | 0.3 EUR |
| 293+ | 0.24 EUR |
| 770+ | 0.093 EUR |
| SMAJ18A-E3/61 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 20V; 13.7A; unidirectional; SMA; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 20V; 13.7A; unidirectional; SMA; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1641 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 295+ | 0.24 EUR |
| 385+ | 0.19 EUR |
| 468+ | 0.15 EUR |
| 834+ | 0.086 EUR |
| 1800+ | 0.08 EUR |
| SMAJ18CA-E3/61 |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 20V; 13.7A; bidirectional; SMA; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 20V; 13.7A; bidirectional; SMA; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3664 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 298+ | 0.24 EUR |
| 355+ | 0.2 EUR |
| 705+ | 0.1 EUR |
| 1800+ | 0.084 EUR |
| SMAJ22A-E3/61 |
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Hersteller: VISHAY
SMAJ22A-E3/61 Unidirectional TVS SMD diodes
SMAJ22A-E3/61 Unidirectional TVS SMD diodes
auf Bestellung 582 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 194+ | 0.37 EUR |
| 582+ | 0.12 EUR |
| SMAJ24A-E3/61 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 28.1V; 10.3A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 28.1V; 10.3A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3262 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 272+ | 0.26 EUR |
| 325+ | 0.22 EUR |
| 469+ | 0.15 EUR |
| 642+ | 0.11 EUR |
| 830+ | 0.086 EUR |
| 1000+ | 0.072 EUR |
| SMAJ24CA-E3/61 |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 28.1V; 10.3A; bidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 28.1V; 10.3A; bidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1535 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 246+ | 0.29 EUR |
| 283+ | 0.25 EUR |
| 332+ | 0.22 EUR |
| 481+ | 0.15 EUR |
| 562+ | 0.13 EUR |
| 658+ | 0.11 EUR |
| SMAJ26A-E3/61 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 30.4V; 9.5A; unidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 30.4V; 9.5A; unidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4159 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 302+ | 0.24 EUR |
| 360+ | 0.2 EUR |
| 589+ | 0.12 EUR |
| 705+ | 0.1 EUR |
| 834+ | 0.086 EUR |
| SMAJ26CA-E3/5A |
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Hersteller: VISHAY
SMAJ26CA-E3/5A Bidirectional TVS SMD diodes
SMAJ26CA-E3/5A Bidirectional TVS SMD diodes
auf Bestellung 605 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 217+ | 0.33 EUR |
| 605+ | 0.12 EUR |
| 52500+ | 0.09 EUR |
| SMAJ26CA-E3/61 |
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Hersteller: VISHAY
SMAJ26CA-E3/61 Bidirectional TVS SMD diodes
SMAJ26CA-E3/61 Bidirectional TVS SMD diodes
auf Bestellung 1628 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 243+ | 0.29 EUR |
| 705+ | 0.1 EUR |
| 747+ | 0.096 EUR |
| 3600+ | 0.072 EUR |
| SMAJ28A-E3/61 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 31.1V; 8.8A; unidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 31.1V; 8.8A; unidirectional; SMA; TransZorb®; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4215 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 321+ | 0.22 EUR |
| 459+ | 0.16 EUR |
| 1800+ | 0.11 EUR |
| SMAJ28CA-E3/61 |
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Hersteller: VISHAY
SMAJ28CA-E3/61 Bidirectional TVS SMD diodes
SMAJ28CA-E3/61 Bidirectional TVS SMD diodes
auf Bestellung 3799 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 228+ | 0.31 EUR |
| 705+ | 0.1 EUR |
| 736+ | 0.097 EUR |
| 747+ | 0.096 EUR |
| SMAJ30A-E3/61 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 35.05V; 8.3A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 30V
Breakdown voltage: 35.05V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 35.05V; 8.3A; unidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 30V
Breakdown voltage: 35.05V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2734 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 348+ | 0.21 EUR |
| 414+ | 0.17 EUR |
| 610+ | 0.12 EUR |
| 705+ | 0.1 EUR |
| 834+ | 0.086 EUR |
| SMAJ30CA-E3/61 |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 33.3V; 8.3A; bidirectional; SMA; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 300W; 33.3V; 8.3A; bidirectional; SMA; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1779 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 236+ | 0.3 EUR |
| 275+ | 0.26 EUR |
| 477+ | 0.15 EUR |
| 705+ | 0.1 EUR |
| 1000+ | 0.093 EUR |
















