Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHA4N80E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 11A Power dissipation: 69W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.27Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHB4N80E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 11A Power dissipation: 69W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.27Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHD4N80E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 11A Power dissipation: 69W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.27Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHD6N65E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHP6N65E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IRFP9240PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC Case: TO247AC Kind of channel: enhancement Type of transistor: P-MOSFET Kind of package: tube Mounting: THT Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.5A Gate charge: 44nC On-state resistance: 0.5Ω Power dissipation: 150W Gate-source voltage: ±20V |
auf Bestellung 1490 Stücke: Lieferzeit 14-21 Tag (e) |
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SF5408-TAP | VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; SOD64; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 150A Case: SOD64 Max. forward voltage: 1.7V Reverse recovery time: 75ns Leakage current: 50µA |
auf Bestellung 1084 Stücke: Lieferzeit 14-21 Tag (e) |
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GBPC3510W-E4/51 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: bulk Max. forward voltage: 1.1V |
auf Bestellung 136 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP32N50KPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 460W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 460W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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RW0127674709JLX000 | VISHAY |
![]() Description: Resistor: wire-wound; 47Ω; 45W; ±5%; 6.3mm; Ø18.1x76.2mm Type of resistor: wire-wound Resistance: 47Ω Power: 45W Tolerance: ±5% Leads dimensions: 6.3mm Body dimensions: Ø18.1x76.2mm Leads: connectors |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCLE100E3222JB0A | VISHAY |
![]() Description: NTC thermistor; 2.2kΩ; THT; 3977K; -40÷125°C; ±5%; 500mW Resistance: 2.2kΩ Power: 0.5W Tolerance: ±5% Type of sensor: NTC thermistor Mounting: THT Operating temperature: -40...125°C Material constant B: 3977K |
auf Bestellung 486 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCLE100E3222JB0 | VISHAY |
![]() Description: NTC thermistor; 2.2kΩ; THT; 3977K; -40÷125°C; 500mW Resistance: 2.2kΩ Power: 0.5W Type of sensor: NTC thermistor Mounting: THT Operating temperature: -40...125°C Material constant B: 3977K |
auf Bestellung 2123 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCLE100E3103JB0A | VISHAY |
![]() Description: NTC thermistor; 10kΩ; THT; 3977K; -40÷125°C; ±5%; 500mW Type of sensor: NTC thermistor Resistance: 10kΩ Mounting: THT Material constant B: 3977K Operating temperature: -40...125°C Tolerance: ±5% Power: 0.5W |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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T93YB504KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 500kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 500kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93YB Track material: cermet Operating temperature: -55...125°C Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5x2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Max. operating voltage: 250V Number of mechanical turns: 22 ±5 Engineering PN: 64Y; 67Y; 3296Y IP rating: IP67 Torque: 1,5Ncm |
auf Bestellung 327 Stücke: Lieferzeit 14-21 Tag (e) |
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T93YB500KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 50Ω; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 50Ω Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93YB Track material: cermet Operating temperature: -55...125°C Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5x2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Max. operating voltage: 250V Number of mechanical turns: 22 ±5 Engineering PN: 64Y; 67Y; 3296Y IP rating: IP67 Torque: 1,5Ncm |
auf Bestellung 444 Stücke: Lieferzeit 14-21 Tag (e) |
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T93YA504KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 500kΩ; 500mW; THT; ±10%; 3296W Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 500kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Manufacturer series: 3296W Track material: cermet Potentiometer standard - inch: 3/8" |
auf Bestellung 173 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP350PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 10A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002E-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; Idm: 1.3A; 0.22W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.24A Power dissipation: 0.22W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.3A |
auf Bestellung 2750 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW08051K10JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 1.1kΩ; 0.125W; ±5%; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 1.1kΩ Power: 0.125W Tolerance: ±5% Max. operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW08051K20JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 1.2kΩ; 0.125W; ±5%; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 1.2kΩ Power: 0.125W Tolerance: ±5% Max. operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC233620684 | VISHAY |
![]() Description: Capacitor: polypropylene; 680nF; 630VDC; 310VAC; THT; ±20%; 27.5mm Type of capacitor: polypropylene Capacitance: 0.68µF Mounting: THT Tolerance: ±20% Terminal pitch: 27.5mm Body dimensions: 31x9x19mm Operating voltage: 310V AC; 630V DC |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-ETU3006-1-M3 | VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; IPAK,TO262AA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: IPAK; TO262AA Kind of package: tube Capacitance: 20pF Reverse recovery time: 100ns Leakage current: 0.25mA Max. forward voltage: 1.35V Max. forward impulse current: 200A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
VS-ETU3006STRL-M3 | VISHAY |
![]() Description: Diode: rectifying; SMD; 600V; 30A; 100ns; D2PAK,TO263AB; Ifsm: 200A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 100ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 20pF Case: D2PAK; TO263AB Max. forward voltage: 1.35V Max. forward impulse current: 200A Leakage current: 0.25mA Kind of package: 13 inch reel Quantity in set/package: 800pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MBRB20100CT-E3/4W | VISHAY |
![]() Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10Ax2; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK; TO263AB Max. forward voltage: 0.8V Max. forward impulse current: 150A Kind of package: tube Quantity in set/package: 50pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NTCS0603E3103FLT | VISHAY |
![]() Description: NTC thermistor; 10kΩ; SMD; 0603; 3435K; ±1%; 125mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 10kΩ Operating temperature: -40...150°C Power: 0.125W Tolerance: ±1% Mounting: SMD Material constant B: 3435K Case - inch: 0603 |
auf Bestellung 2325 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCS0603E3103FMT | VISHAY |
![]() Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±1%; 125mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 10kΩ Operating temperature: -40...150°C Power: 0.125W Tolerance: ±1% Mounting: SMD Material constant B: 3610K Case - inch: 0603 |
auf Bestellung 5178 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCS0603E3103GMT | VISHAY |
![]() Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±2%; 125mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 10kΩ Operating temperature: -40...150°C Power: 0.125W Tolerance: ±2% Mounting: SMD Material constant B: 3610K Case - inch: 0603 |
auf Bestellung 3639 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCS0603E3103HMT | VISHAY |
![]() Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±3%; 125mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 10kΩ Operating temperature: -40...150°C Power: 0.125W Tolerance: ±3% Mounting: SMD Material constant B: 3610K Case - inch: 0603 |
auf Bestellung 482 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCS0603E3103JMT | VISHAY |
![]() Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±5%; 125mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 10kΩ Operating temperature: -40...150°C Power: 0.125W Tolerance: ±5% Mounting: SMD Material constant B: 3610K Case - inch: 0603 |
auf Bestellung 4705 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCS0603E3104FXT | VISHAY |
![]() Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±1%; 125mW; -40÷150°C Resistance: 100kΩ Type of sensor: NTC thermistor Mounting: SMD Operating temperature: -40...150°C Power: 0.125W Tolerance: ±1% Case - inch: 0603 Material constant B: 4100K |
auf Bestellung 873 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCS0603E3104GXT | VISHAY |
![]() Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±2%; 125mW; -40÷150°C Resistance: 100kΩ Type of sensor: NTC thermistor Mounting: SMD Operating temperature: -40...150°C Power: 0.125W Tolerance: ±2% Case - inch: 0603 Material constant B: 4100K |
auf Bestellung 891 Stücke: Lieferzeit 14-21 Tag (e) |
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NTCS0603E3104HXT | VISHAY |
![]() Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±3%; 125mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 100kΩ Operating temperature: -40...150°C Power: 0.125W Tolerance: ±3% Mounting: SMD Material constant B: 4100K Case - inch: 0603 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTCS0603E3104JXT | VISHAY |
![]() Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±5%; 125mW; -40÷150°C Resistance: 100kΩ Type of sensor: NTC thermistor Mounting: SMD Operating temperature: -40...150°C Power: 0.125W Tolerance: ±5% Case - inch: 0603 Material constant B: 4100K |
auf Bestellung 3731 Stücke: Lieferzeit 14-21 Tag (e) |
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ES3D-E3/57T | VISHAY |
![]() Description: Diode: rectifying; SMD; 200V; 3A; 50ns; DO214AB,SMC; Ufmax: 0.9V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 3A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 45pF Case: DO214AB; SMC Max. forward voltage: 0.9V Max. forward impulse current: 100A Leakage current: 0.5mA Quantity in set/package: 850pcs. Features of semiconductor devices: glass passivated; ultrafast switching Kind of package: 7 inch reel |
auf Bestellung 1008 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG25N60EFL-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 61A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 61A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 146mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SIHG125N60EF-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO247AC Polarisation: unipolar Gate charge: 47nC On-state resistance: 0.125Ω Drain current: 16A Gate-source voltage: ±30V Power dissipation: 179W Pulsed drain current: 66A Case: TO247AC Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SIHG47N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 357W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 64mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 234 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ12A-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 13.3V; 30.2A; unidirectional; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 30.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 1313 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR120PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Pulsed drain current: 31A Gate-source voltage: ±20V On-state resistance: 0.27Ω Gate charge: 16nC |
auf Bestellung 914 Stücke: Lieferzeit 14-21 Tag (e) |
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BP104 | VISHAY |
![]() Description: PIN IR photodiode; DIL; THT; 950nm; 130° Type of photoelement: PIN IR photodiode Case: DIL Mounting: THT Wavelength of peak sensitivity: 950nm Viewing angle: 130° Active area: 7.5mm2 Photoreceiver features: fitted with IR filter |
auf Bestellung 4214 Stücke: Lieferzeit 14-21 Tag (e) |
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VBP104FAS | VISHAY |
![]() Description: PIN IR photodiode; SMD; 950nm; 780÷1050nm; 65°; 65mW Type of photoelement: PIN IR photodiode Mounting: SMD Wavelength of peak sensitivity: 950nm Wavelength: 780...1050nm Viewing angle: 65° Active area: 4.4mm2 Dimensions: 6.4x3.9x1.2mm Radiant power: 65mW |
auf Bestellung 383 Stücke: Lieferzeit 14-21 Tag (e) |
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TSMF1000 | VISHAY |
![]() ![]() Description: IR transmitter; 890nm; transparent; 35mW; 17°; 1.3÷1.5VDC; SMD Type of diode: IR transmitter Wavelength: 890nm LED lens: transparent Radiant power: 35mW Viewing angle: 17° Operating voltage: 1.3...1.5V DC Mounting: SMD Dimensions: 2.5x2x2.7mm LED current: 100mA LED version: reverse mount |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C24-TAP | VISHAY |
![]() Description: Diode: Zener; 1.3W; 24V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 24V Mounting: THT Tolerance: ±5% Kind of package: Ammo Pack Case: DO41 Semiconductor structure: single diode |
auf Bestellung 5168 Stücke: Lieferzeit 14-21 Tag (e) |
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PTS120601B1K00PU00 | VISHAY |
![]() Description: Sensor: temperature; Pt1000; 1000Ω; cl.B 0,3 %; 1206; SMD; bulk Type of sensor: temperature Kind of temperature sensor: Pt1000 Resistance: 1kΩ Tolerance: cl.B 0,3 % Body dimensions: 0.55x3.2x1.6mm Temperature coefficient: 3850ppm/°C Operating temperature: -55...155°C Mounting: SMD Case: 1206 T dimension: 0.5mm Kind of package: bulk |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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DG2502DB-T2-GE1 | VISHAY |
![]() Description: IC: analog switch; SPST-NO; Ch: 4; WCSP16; 1.8÷5.5V; reel,tape Mounting: SMD Output configuration: SPST-NO Case: WCSP16 Supply voltage: 1.8...5.5V Number of channels: 4 Resistance: 250Ω Type of integrated circuit: analog switch Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
DG2503DB-T2-GE1 | VISHAY |
![]() Description: IC: analog switch; SPST-NO/NC; Ch: 4; WCSP16; 1.8÷5.5V; reel,tape Mounting: SMD Output configuration: SPST-NO/NC Case: WCSP16 Supply voltage: 1.8...5.5V Number of channels: 4 Resistance: 250Ω Type of integrated circuit: analog switch Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SMBJ30CA-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 33.3V; 12.4A; bidirectional; SMB; TransZorb®; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 12.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
auf Bestellung 1204 Stücke: Lieferzeit 14-21 Tag (e) |
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SS1FH10-M3/H | VISHAY |
![]() Description: Diode: Schottky rectifying; DO219AB; SMD; 100V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: DO219AB Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Kind of package: 7 inch reel Capacitance: 70pF Max. forward voltage: 0.8V Max. forward impulse current: 40A |
auf Bestellung 2331 Stücke: Lieferzeit 14-21 Tag (e) |
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VS-10MQ100NTRPBF | VISHAY |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; 13 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Capacitance: 38pF Max. forward voltage: 0.85V Max. forward impulse current: 120A Kind of package: 13 inch reel Quantity in set/package: 7500pcs. |
auf Bestellung 18310 Stücke: Lieferzeit 14-21 Tag (e) |
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V10P10HM3_A/H | VISHAY |
![]() Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 10A; 1500pcs. Type of diode: Schottky rectifying Case: SMPC; TO277A Mounting: SMD Max. off-state voltage: 100V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.62V Max. forward impulse current: 180A Kind of package: 7 inch reel Quantity in set/package: 1500pcs. Leakage current: 20mA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1.5KE43A-E3/54 | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 43.05V; 25.3A; unidirectional; DO201; TransZorb® Mounting: THT Case: DO201 Features of semiconductor devices: glass passivated Technology: TransZorb® Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 1µA Max. forward impulse current: 25.3A Max. off-state voltage: 36.8V Breakdown voltage: 43.05V Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Kind of package: 13 inch reel |
auf Bestellung 1857 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL205158472E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SNAP-IN; 4700uF; 63VDC; Ø30x40mm; ±20% Mounting: SNAP-IN Type of capacitor: electrolytic Operating temperature: -40...85°C Capacitance: 4.7mF Body dimensions: Ø30x40mm Tolerance: ±20% Operating voltage: 63V DC |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
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MAL215757689E3 | VISHAY |
![]() Description: Capacitor: electrolytic; SNAP-IN; 68uF; 450VDC; Ø22x30mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 68µF Operating voltage: 450V DC Body dimensions: Ø22x30mm Terminal pitch: 10mm Tolerance: ±20% Service life: 5000h Operating temperature: -25...85°C |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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BFC236856684 | VISHAY |
![]() Description: Capacitor: polyester; 680nF; 220VAC; 400VDC; 27.5mm; ±5%; THT Type of capacitor: polyester Capacitance: 0.68µF Body dimensions: 8.5x21.5x30mm Mounting: THT Tolerance: ±5% Terminal pitch: 27.5mm Lead length: 0.8mm Operating temperature: -55...85°C Operating voltage: 220V AC; 400V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CRCW0805470RFKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 470Ω; 0.125W; ±1%; CRCW0805 Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 470Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Mounting: SMD Manufacturer series: CRCW0805 Operating temperature: -55...155°C |
auf Bestellung 46000 Stücke: Lieferzeit 14-21 Tag (e) |
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CRCW0805470RJNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 470Ω; 0.125W; ±5%; CRCW0805 Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 470Ω Power: 0.125W Tolerance: ±5% Max. operating voltage: 150V Mounting: SMD Manufacturer series: CRCW0805 Operating temperature: -55...155°C |
auf Bestellung 4100 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF820APBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 50W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 50W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 883 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF820PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 8A; 50W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.5A Pulsed drain current: 8A Power dissipation: 50W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 704 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB9N60APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.8A Power dissipation: 170W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 897 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS9N60APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.8A Power dissipation: 170W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate charge: 49nC |
auf Bestellung 119 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHA4N80E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHB4N80E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHD4N80E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHD6N65E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHP6N65E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFP9240PBF |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC
Case: TO247AC
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Gate charge: 44nC
On-state resistance: 0.5Ω
Power dissipation: 150W
Gate-source voltage: ±20V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC
Case: TO247AC
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Gate charge: 44nC
On-state resistance: 0.5Ω
Power dissipation: 150W
Gate-source voltage: ±20V
auf Bestellung 1490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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29+ | 2.47 EUR |
33+ | 2.17 EUR |
54+ | 1.34 EUR |
57+ | 1.27 EUR |
SF5408-TAP |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; SOD64; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: SOD64
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; SOD64; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: SOD64
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 50µA
auf Bestellung 1084 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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46+ | 1.59 EUR |
66+ | 1.09 EUR |
98+ | 0.74 EUR |
103+ | 0.7 EUR |
500+ | 0.69 EUR |
1000+ | 0.67 EUR |
GBPC3510W-E4/51 |
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Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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15+ | 4.95 EUR |
24+ | 3.02 EUR |
25+ | 2.86 EUR |
IRFP32N50KPBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 460W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 460W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 460W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 460W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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2+ | 35.75 EUR |
RW0127674709JLX000 |
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Hersteller: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; 47Ω; 45W; ±5%; 6.3mm; Ø18.1x76.2mm
Type of resistor: wire-wound
Resistance: 47Ω
Power: 45W
Tolerance: ±5%
Leads dimensions: 6.3mm
Body dimensions: Ø18.1x76.2mm
Leads: connectors
Category: Power resistors
Description: Resistor: wire-wound; 47Ω; 45W; ±5%; 6.3mm; Ø18.1x76.2mm
Type of resistor: wire-wound
Resistance: 47Ω
Power: 45W
Tolerance: ±5%
Leads dimensions: 6.3mm
Body dimensions: Ø18.1x76.2mm
Leads: connectors
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
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3+ | 24.88 EUR |
NTCLE100E3222JB0A |
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Hersteller: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 2.2kΩ; THT; 3977K; -40÷125°C; ±5%; 500mW
Resistance: 2.2kΩ
Power: 0.5W
Tolerance: ±5%
Type of sensor: NTC thermistor
Mounting: THT
Operating temperature: -40...125°C
Material constant B: 3977K
Category: THT measurement NTC thermistors
Description: NTC thermistor; 2.2kΩ; THT; 3977K; -40÷125°C; ±5%; 500mW
Resistance: 2.2kΩ
Power: 0.5W
Tolerance: ±5%
Type of sensor: NTC thermistor
Mounting: THT
Operating temperature: -40...125°C
Material constant B: 3977K
auf Bestellung 486 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
154+ | 0.47 EUR |
184+ | 0.39 EUR |
194+ | 0.37 EUR |
NTCLE100E3222JB0 |
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Hersteller: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 2.2kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 2.2kΩ
Power: 0.5W
Type of sensor: NTC thermistor
Mounting: THT
Operating temperature: -40...125°C
Material constant B: 3977K
Category: THT measurement NTC thermistors
Description: NTC thermistor; 2.2kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 2.2kΩ
Power: 0.5W
Type of sensor: NTC thermistor
Mounting: THT
Operating temperature: -40...125°C
Material constant B: 3977K
auf Bestellung 2123 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.77 EUR |
124+ | 0.58 EUR |
139+ | 0.52 EUR |
194+ | 0.37 EUR |
205+ | 0.35 EUR |
NTCLE100E3103JB0A |
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Hersteller: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 10kΩ; THT; 3977K; -40÷125°C; ±5%; 500mW
Type of sensor: NTC thermistor
Resistance: 10kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Tolerance: ±5%
Power: 0.5W
Category: THT measurement NTC thermistors
Description: NTC thermistor; 10kΩ; THT; 3977K; -40÷125°C; ±5%; 500mW
Type of sensor: NTC thermistor
Resistance: 10kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Tolerance: ±5%
Power: 0.5W
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
132+ | 0.54 EUR |
151+ | 0.47 EUR |
229+ | 0.31 EUR |
242+ | 0.3 EUR |
T93YB504KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 500kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 500kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
auf Bestellung 327 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.82 EUR |
33+ | 2.2 EUR |
49+ | 1.49 EUR |
52+ | 1.4 EUR |
T93YB500KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 50Ω; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 50Ω
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 50Ω; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 50Ω
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.06 EUR |
41+ | 1.77 EUR |
65+ | 1.12 EUR |
68+ | 1.06 EUR |
T93YA504KT20 |
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Hersteller: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 500mW; THT; ±10%; 3296W
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 500kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Manufacturer series: 3296W
Track material: cermet
Potentiometer standard - inch: 3/8"
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 500mW; THT; ±10%; 3296W
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 500kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Manufacturer series: 3296W
Track material: cermet
Potentiometer standard - inch: 3/8"
auf Bestellung 173 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
34+ | 2.12 EUR |
41+ | 1.76 EUR |
54+ | 1.34 EUR |
57+ | 1.27 EUR |
IRFP350PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
16+ | 4.56 EUR |
35+ | 2.06 EUR |
37+ | 1.94 EUR |
2N7002E-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; Idm: 1.3A; 0.22W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 0.22W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; Idm: 1.3A; 0.22W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 0.22W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.3A
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
176+ | 0.41 EUR |
248+ | 0.29 EUR |
428+ | 0.17 EUR |
455+ | 0.16 EUR |
CRCW08051K10JNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.1kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.1kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.1kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.1kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
500+ | 0.14 EUR |
CRCW08051K20JNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.2kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.2kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.2kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.2kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
BFC233620684 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Type of capacitor: polypropylene
Capacitance: 0.68µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 27.5mm
Body dimensions: 31x9x19mm
Operating voltage: 310V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Type of capacitor: polypropylene
Capacitance: 0.68µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 27.5mm
Body dimensions: 31x9x19mm
Operating voltage: 310V AC; 630V DC
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
30+ | 2.42 EUR |
36+ | 2.02 EUR |
45+ | 1.62 EUR |
47+ | 1.53 EUR |
VS-ETU3006-1-M3 |
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Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; IPAK,TO262AA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: IPAK; TO262AA
Kind of package: tube
Capacitance: 20pF
Reverse recovery time: 100ns
Leakage current: 0.25mA
Max. forward voltage: 1.35V
Max. forward impulse current: 200A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; IPAK,TO262AA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: IPAK; TO262AA
Kind of package: tube
Capacitance: 20pF
Reverse recovery time: 100ns
Leakage current: 0.25mA
Max. forward voltage: 1.35V
Max. forward impulse current: 200A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
VS-ETU3006STRL-M3 |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 100ns; D2PAK,TO263AB; Ifsm: 200A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 20pF
Case: D2PAK; TO263AB
Max. forward voltage: 1.35V
Max. forward impulse current: 200A
Leakage current: 0.25mA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 100ns; D2PAK,TO263AB; Ifsm: 200A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 20pF
Case: D2PAK; TO263AB
Max. forward voltage: 1.35V
Max. forward impulse current: 200A
Leakage current: 0.25mA
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MBRB20100CT-E3/4W |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK; TO263AB
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Kind of package: tube
Quantity in set/package: 50pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK; TO263AB
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Kind of package: tube
Quantity in set/package: 50pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTCS0603E3103FLT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3435K; ±1%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±1%
Mounting: SMD
Material constant B: 3435K
Case - inch: 0603
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3435K; ±1%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±1%
Mounting: SMD
Material constant B: 3435K
Case - inch: 0603
auf Bestellung 2325 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
107+ | 0.67 EUR |
182+ | 0.39 EUR |
189+ | 0.38 EUR |
221+ | 0.32 EUR |
234+ | 0.31 EUR |
NTCS0603E3103FMT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±1%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±1%
Mounting: SMD
Material constant B: 3610K
Case - inch: 0603
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±1%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±1%
Mounting: SMD
Material constant B: 3610K
Case - inch: 0603
auf Bestellung 5178 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.23 EUR |
77+ | 0.93 EUR |
175+ | 0.41 EUR |
185+ | 0.39 EUR |
NTCS0603E3103GMT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±2%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±2%
Mounting: SMD
Material constant B: 3610K
Case - inch: 0603
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±2%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±2%
Mounting: SMD
Material constant B: 3610K
Case - inch: 0603
auf Bestellung 3639 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.14 EUR |
114+ | 0.63 EUR |
213+ | 0.34 EUR |
226+ | 0.32 EUR |
NTCS0603E3103HMT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±3%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±3%
Mounting: SMD
Material constant B: 3610K
Case - inch: 0603
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±3%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±3%
Mounting: SMD
Material constant B: 3610K
Case - inch: 0603
auf Bestellung 482 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
88+ | 0.82 EUR |
139+ | 0.51 EUR |
160+ | 0.45 EUR |
323+ | 0.22 EUR |
341+ | 0.21 EUR |
NTCS0603E3103JMT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±5%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±5%
Mounting: SMD
Material constant B: 3610K
Case - inch: 0603
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±5%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±5%
Mounting: SMD
Material constant B: 3610K
Case - inch: 0603
auf Bestellung 4705 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
209+ | 0.34 EUR |
230+ | 0.31 EUR |
379+ | 0.19 EUR |
404+ | 0.18 EUR |
4000+ | 0.17 EUR |
NTCS0603E3104FXT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±1%; 125mW; -40÷150°C
Resistance: 100kΩ
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±1%
Case - inch: 0603
Material constant B: 4100K
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±1%; 125mW; -40÷150°C
Resistance: 100kΩ
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±1%
Case - inch: 0603
Material constant B: 4100K
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
54+ | 1.34 EUR |
75+ | 0.96 EUR |
182+ | 0.39 EUR |
192+ | 0.37 EUR |
NTCS0603E3104GXT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±2%; 125mW; -40÷150°C
Resistance: 100kΩ
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±2%
Case - inch: 0603
Material constant B: 4100K
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±2%; 125mW; -40÷150°C
Resistance: 100kΩ
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±2%
Case - inch: 0603
Material constant B: 4100K
auf Bestellung 891 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
122+ | 0.59 EUR |
142+ | 0.51 EUR |
222+ | 0.32 EUR |
235+ | 0.3 EUR |
NTCS0603E3104HXT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±3%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 100kΩ
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±3%
Mounting: SMD
Material constant B: 4100K
Case - inch: 0603
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±3%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 100kΩ
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±3%
Mounting: SMD
Material constant B: 4100K
Case - inch: 0603
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTCS0603E3104JXT |
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Hersteller: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±5%; 125mW; -40÷150°C
Resistance: 100kΩ
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±5%
Case - inch: 0603
Material constant B: 4100K
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±5%; 125mW; -40÷150°C
Resistance: 100kΩ
Type of sensor: NTC thermistor
Mounting: SMD
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±5%
Case - inch: 0603
Material constant B: 4100K
auf Bestellung 3731 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
214+ | 0.33 EUR |
232+ | 0.31 EUR |
272+ | 0.26 EUR |
315+ | 0.23 EUR |
379+ | 0.19 EUR |
404+ | 0.18 EUR |
417+ | 0.17 EUR |
ES3D-E3/57T |
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Hersteller: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 50ns; DO214AB,SMC; Ufmax: 0.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: DO214AB; SMC
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Quantity in set/package: 850pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: 7 inch reel
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 50ns; DO214AB,SMC; Ufmax: 0.9V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 45pF
Case: DO214AB; SMC
Max. forward voltage: 0.9V
Max. forward impulse current: 100A
Leakage current: 0.5mA
Quantity in set/package: 850pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: 7 inch reel
auf Bestellung 1008 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
93+ | 0.77 EUR |
151+ | 0.48 EUR |
360+ | 0.2 EUR |
382+ | 0.19 EUR |
SIHG25N60EFL-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 61A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 61A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 146mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 61A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 61A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 146mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHG125N60EF-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO247AC
Polarisation: unipolar
Gate charge: 47nC
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±30V
Power dissipation: 179W
Pulsed drain current: 66A
Case: TO247AC
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO247AC
Polarisation: unipolar
Gate charge: 47nC
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±30V
Power dissipation: 179W
Pulsed drain current: 66A
Case: TO247AC
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIHG47N60E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.38 EUR |
8+ | 9.58 EUR |
SMBJ12A-E3/52 |
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Hersteller: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3V; 30.2A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3V; 30.2A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 1313 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
207+ | 0.35 EUR |
241+ | 0.3 EUR |
334+ | 0.21 EUR |
379+ | 0.19 EUR |
676+ | 0.11 EUR |
715+ | 0.1 EUR |
IRFR120PBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Gate charge: 16nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 31A
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Gate charge: 16nC
auf Bestellung 914 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
76+ | 0.94 EUR |
82+ | 0.88 EUR |
174+ | 0.41 EUR |
184+ | 0.39 EUR |
BP104 |
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Hersteller: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 950nm; 130°
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 950nm
Viewing angle: 130°
Active area: 7.5mm2
Photoreceiver features: fitted with IR filter
Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 950nm; 130°
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 950nm
Viewing angle: 130°
Active area: 7.5mm2
Photoreceiver features: fitted with IR filter
auf Bestellung 4214 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.9 EUR |
103+ | 0.7 EUR |
147+ | 0.49 EUR |
155+ | 0.46 EUR |
500+ | 0.44 EUR |
VBP104FAS |
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Hersteller: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; SMD; 950nm; 780÷1050nm; 65°; 65mW
Type of photoelement: PIN IR photodiode
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 65°
Active area: 4.4mm2
Dimensions: 6.4x3.9x1.2mm
Radiant power: 65mW
Category: Photodiodes
Description: PIN IR photodiode; SMD; 950nm; 780÷1050nm; 65°; 65mW
Type of photoelement: PIN IR photodiode
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 65°
Active area: 4.4mm2
Dimensions: 6.4x3.9x1.2mm
Radiant power: 65mW
auf Bestellung 383 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
59+ | 1.23 EUR |
77+ | 0.93 EUR |
188+ | 0.38 EUR |
199+ | 0.36 EUR |
TSMF1000 |
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Hersteller: VISHAY
Category: IR LEDs
Description: IR transmitter; 890nm; transparent; 35mW; 17°; 1.3÷1.5VDC; SMD
Type of diode: IR transmitter
Wavelength: 890nm
LED lens: transparent
Radiant power: 35mW
Viewing angle: 17°
Operating voltage: 1.3...1.5V DC
Mounting: SMD
Dimensions: 2.5x2x2.7mm
LED current: 100mA
LED version: reverse mount
Category: IR LEDs
Description: IR transmitter; 890nm; transparent; 35mW; 17°; 1.3÷1.5VDC; SMD
Type of diode: IR transmitter
Wavelength: 890nm
LED lens: transparent
Radiant power: 35mW
Viewing angle: 17°
Operating voltage: 1.3...1.5V DC
Mounting: SMD
Dimensions: 2.5x2x2.7mm
LED current: 100mA
LED version: reverse mount
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
46+ | 1.56 EUR |
BZX85C24-TAP |
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Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 24V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 24V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO41
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 24V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 24V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO41
Semiconductor structure: single diode
auf Bestellung 5168 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
295+ | 0.24 EUR |
379+ | 0.19 EUR |
459+ | 0.16 EUR |
754+ | 0.095 EUR |
913+ | 0.078 EUR |
1238+ | 0.058 EUR |
1306+ | 0.055 EUR |
1341+ | 0.053 EUR |
PTS120601B1K00PU00 |
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Hersteller: VISHAY
Category: Temp. Sensors - Resistance Thermometers
Description: Sensor: temperature; Pt1000; 1000Ω; cl.B 0,3 %; 1206; SMD; bulk
Type of sensor: temperature
Kind of temperature sensor: Pt1000
Resistance: 1kΩ
Tolerance: cl.B 0,3 %
Body dimensions: 0.55x3.2x1.6mm
Temperature coefficient: 3850ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
Case: 1206
T dimension: 0.5mm
Kind of package: bulk
Category: Temp. Sensors - Resistance Thermometers
Description: Sensor: temperature; Pt1000; 1000Ω; cl.B 0,3 %; 1206; SMD; bulk
Type of sensor: temperature
Kind of temperature sensor: Pt1000
Resistance: 1kΩ
Tolerance: cl.B 0,3 %
Body dimensions: 0.55x3.2x1.6mm
Temperature coefficient: 3850ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
Case: 1206
T dimension: 0.5mm
Kind of package: bulk
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.68 EUR |
13+ | 5.52 EUR |
DG2502DB-T2-GE1 |
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Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; WCSP16; 1.8÷5.5V; reel,tape
Mounting: SMD
Output configuration: SPST-NO
Case: WCSP16
Supply voltage: 1.8...5.5V
Number of channels: 4
Resistance: 250Ω
Type of integrated circuit: analog switch
Kind of package: reel; tape
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; WCSP16; 1.8÷5.5V; reel,tape
Mounting: SMD
Output configuration: SPST-NO
Case: WCSP16
Supply voltage: 1.8...5.5V
Number of channels: 4
Resistance: 250Ω
Type of integrated circuit: analog switch
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DG2503DB-T2-GE1 |
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Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO/NC; Ch: 4; WCSP16; 1.8÷5.5V; reel,tape
Mounting: SMD
Output configuration: SPST-NO/NC
Case: WCSP16
Supply voltage: 1.8...5.5V
Number of channels: 4
Resistance: 250Ω
Type of integrated circuit: analog switch
Kind of package: reel; tape
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO/NC; Ch: 4; WCSP16; 1.8÷5.5V; reel,tape
Mounting: SMD
Output configuration: SPST-NO/NC
Case: WCSP16
Supply voltage: 1.8...5.5V
Number of channels: 4
Resistance: 250Ω
Type of integrated circuit: analog switch
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMBJ30CA-E3/52 |
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Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3V; 12.4A; bidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3V; 12.4A; bidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
auf Bestellung 1204 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
211+ | 0.34 EUR |
240+ | 0.3 EUR |
274+ | 0.26 EUR |
317+ | 0.23 EUR |
863+ | 0.083 EUR |
926+ | 0.077 EUR |
SS1FH10-M3/H |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO219AB; SMD; 100V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: DO219AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: 7 inch reel
Capacitance: 70pF
Max. forward voltage: 0.8V
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO219AB; SMD; 100V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: DO219AB
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Kind of package: 7 inch reel
Capacitance: 70pF
Max. forward voltage: 0.8V
Max. forward impulse current: 40A
auf Bestellung 2331 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
200+ | 0.36 EUR |
283+ | 0.25 EUR |
365+ | 0.2 EUR |
404+ | 0.18 EUR |
477+ | 0.15 EUR |
506+ | 0.14 EUR |
VS-10MQ100NTRPBF |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 38pF
Max. forward voltage: 0.85V
Max. forward impulse current: 120A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 1A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 38pF
Max. forward voltage: 0.85V
Max. forward impulse current: 120A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
auf Bestellung 18310 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
97+ | 0.74 EUR |
117+ | 0.61 EUR |
129+ | 0.56 EUR |
145+ | 0.49 EUR |
175+ | 0.41 EUR |
685+ | 0.1 EUR |
725+ | 0.099 EUR |
V10P10HM3_A/H |
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Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 10A; 1500pcs.
Type of diode: Schottky rectifying
Case: SMPC; TO277A
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 180A
Kind of package: 7 inch reel
Quantity in set/package: 1500pcs.
Leakage current: 20mA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPC,TO277A; SMD; 100V; 10A; 1500pcs.
Type of diode: Schottky rectifying
Case: SMPC; TO277A
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 180A
Kind of package: 7 inch reel
Quantity in set/package: 1500pcs.
Leakage current: 20mA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1.5KE43A-E3/54 |
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Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 43.05V; 25.3A; unidirectional; DO201; TransZorb®
Mounting: THT
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 25.3A
Max. off-state voltage: 36.8V
Breakdown voltage: 43.05V
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 43.05V; 25.3A; unidirectional; DO201; TransZorb®
Mounting: THT
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Max. forward impulse current: 25.3A
Max. off-state voltage: 36.8V
Breakdown voltage: 43.05V
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
auf Bestellung 1857 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
117+ | 0.61 EUR |
147+ | 0.49 EUR |
218+ | 0.33 EUR |
231+ | 0.31 EUR |
MAL205158472E3 |
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Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 4700uF; 63VDC; Ø30x40mm; ±20%
Mounting: SNAP-IN
Type of capacitor: electrolytic
Operating temperature: -40...85°C
Capacitance: 4.7mF
Body dimensions: Ø30x40mm
Tolerance: ±20%
Operating voltage: 63V DC
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 4700uF; 63VDC; Ø30x40mm; ±20%
Mounting: SNAP-IN
Type of capacitor: electrolytic
Operating temperature: -40...85°C
Capacitance: 4.7mF
Body dimensions: Ø30x40mm
Tolerance: ±20%
Operating voltage: 63V DC
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.87 EUR |
8+ | 9.48 EUR |
20+ | 9.22 EUR |
MAL215757689E3 |
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Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 68uF; 450VDC; Ø22x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 68µF
Operating voltage: 450V DC
Body dimensions: Ø22x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -25...85°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 68uF; 450VDC; Ø22x30mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 68µF
Operating voltage: 450V DC
Body dimensions: Ø22x30mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 5000h
Operating temperature: -25...85°C
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.77 EUR |
16+ | 4.48 EUR |
17+ | 4.23 EUR |
100+ | 4.1 EUR |
200+ | 4.08 EUR |
BFC236856684 |
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Hersteller: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 680nF; 220VAC; 400VDC; 27.5mm; ±5%; THT
Type of capacitor: polyester
Capacitance: 0.68µF
Body dimensions: 8.5x21.5x30mm
Mounting: THT
Tolerance: ±5%
Terminal pitch: 27.5mm
Lead length: 0.8mm
Operating temperature: -55...85°C
Operating voltage: 220V AC; 400V DC
Category: THT Film Capacitors
Description: Capacitor: polyester; 680nF; 220VAC; 400VDC; 27.5mm; ±5%; THT
Type of capacitor: polyester
Capacitance: 0.68µF
Body dimensions: 8.5x21.5x30mm
Mounting: THT
Tolerance: ±5%
Terminal pitch: 27.5mm
Lead length: 0.8mm
Operating temperature: -55...85°C
Operating voltage: 220V AC; 400V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CRCW0805470RFKTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 470Ω; 0.125W; ±1%; CRCW0805
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 470Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Mounting: SMD
Manufacturer series: CRCW0805
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 470Ω; 0.125W; ±1%; CRCW0805
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 470Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Mounting: SMD
Manufacturer series: CRCW0805
Operating temperature: -55...155°C
auf Bestellung 46000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3200+ | 0.023 EUR |
9100+ | 0.0079 EUR |
11700+ | 0.0061 EUR |
25600+ | 0.0028 EUR |
26100+ | 0.0027 EUR |
27700+ | 0.0026 EUR |
CRCW0805470RJNTABC |
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Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 470Ω; 0.125W; ±5%; CRCW0805
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 470Ω
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Mounting: SMD
Manufacturer series: CRCW0805
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 470Ω; 0.125W; ±5%; CRCW0805
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 470Ω
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Mounting: SMD
Manufacturer series: CRCW0805
Operating temperature: -55...155°C
auf Bestellung 4100 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2800+ | 0.026 EUR |
4100+ | 0.017 EUR |
IRF820APBF | ![]() |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 10A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 883 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
53+ | 1.36 EUR |
61+ | 1.18 EUR |
126+ | 0.57 EUR |
133+ | 0.54 EUR |
IRF820PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 8A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Pulsed drain current: 8A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.5A; Idm: 8A; 50W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.5A
Pulsed drain current: 8A
Power dissipation: 50W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 704 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
80+ | 0.9 EUR |
91+ | 0.79 EUR |
131+ | 0.55 EUR |
139+ | 0.52 EUR |
IRFB9N60APBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 897 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.22 EUR |
27+ | 2.75 EUR |
44+ | 1.66 EUR |
46+ | 1.57 EUR |
100+ | 1.54 EUR |
IRFS9N60APBF |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.8A; 170W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.8A
Power dissipation: 170W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 49nC
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.33 EUR |
37+ | 1.94 EUR |
40+ | 1.83 EUR |
100+ | 1.77 EUR |