Produkte > YANGJIE TECHNOLOGY > Alle Produkte des Herstellers YANGJIE TECHNOLOGY (4514) > Seite 75 nach 76
Foto | Bezeichnung | Hersteller | Beschreibung |
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YJL3401AL | YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -27A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 96mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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YJL3401AL | YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -27A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 96mΩ Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 245 Stücke: Lieferzeit 7-14 Tag (e) |
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YJL3401AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJL3404A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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YJL3404A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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YJL3404AQ | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJL3407A | YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -15A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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YJL3407A | YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -15A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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YJL3407AL | YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -15A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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YJL3407AL | YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.2A Pulsed drain current: -15A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10 Stücke |
Produkt ist nicht verfügbar |
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YJM04N10A | Yangjie Technology | Description: SOT-223 N 100V 4A Transistors F |
auf Bestellung 12500 Stücke: Lieferzeit 21-28 Tag (e) |
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YJM04N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.2A Pulsed drain current: 16A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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YJM04N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.2A Pulsed drain current: 16A Power dissipation: 2.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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YJM05N06A | Yangjie Technology | Description: SOT-223 N 60V 5A Transistors FE |
auf Bestellung 250000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJP25N15B | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 25A Pulsed drain current: 90A Power dissipation: 52W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 11.6nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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YJP25N15B | YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 25A Pulsed drain current: 90A Power dissipation: 52W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: THT Gate charge: 11.6nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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YJQ13N03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJQ15GP10A | YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A Type of transistor: P-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: -100V Drain current: -9.5A Pulsed drain current: -45A Power dissipation: 17.2W Case: DFN3.3x3.3 EP Gate-source voltage: ±20V On-state resistance: 120mΩ Mounting: SMD Gate charge: 3.98nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 9372 Stücke: Lieferzeit 14-21 Tag (e) |
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YJQ15GP10A | YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A Type of transistor: P-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: -100V Drain current: -9.5A Pulsed drain current: -45A Power dissipation: 17.2W Case: DFN3.3x3.3 EP Gate-source voltage: ±20V On-state resistance: 120mΩ Mounting: SMD Gate charge: 3.98nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9372 Stücke: Lieferzeit 7-14 Tag (e) |
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YJQ2012A | Yangjie Technology |
Description: DFN2020-6L N 20V 12A Transistor Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJQ20N04A | Yangjie Technology |
Description: DFN(3.3x3.3) N 40V 20A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJQ20P03A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJQ2301A | Yangjie Technology | Description: DFN2020-6L P -20V -4A Transisto |
auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJQ3400A | YANGJIE TECHNOLOGY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A Type of transistor: N-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.2A Pulsed drain current: 30A Power dissipation: 2W Case: DFN2020-6 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) |
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YJQ3400A | YANGJIE TECHNOLOGY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A Type of transistor: N-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.2A Pulsed drain current: 30A Power dissipation: 2W Case: DFN2020-6 Gate-source voltage: ±12V On-state resistance: 45mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2760 Stücke: Lieferzeit 7-14 Tag (e) |
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YJQ3407A | YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.4A Pulsed drain current: -22A Power dissipation: 1.4W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 11.65nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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YJQ3407A | YANGJIE TECHNOLOGY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W Type of transistor: P-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.4A Pulsed drain current: -22A Power dissipation: 1.4W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 64mΩ Mounting: SMD Gate charge: 11.65nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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YJQ35G10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 120A Power dissipation: 54W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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YJQ35G10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 120A Power dissipation: 54W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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YJQ35N04A | Yangjie Technology | Description: DFN(3.3x3.3) N 40V 35A Transist |
auf Bestellung 500000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJQ35N04A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 23A Pulsed drain current: 120A Power dissipation: 40W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2660 Stücke: Lieferzeit 14-21 Tag (e) |
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YJQ35N04A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W Type of transistor: N-MOSFET Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: 40V Drain current: 23A Pulsed drain current: 120A Power dissipation: 40W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2660 Stücke: Lieferzeit 7-14 Tag (e) |
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YJQ4606A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
auf Bestellung 500000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJQ4666B | YANGJIE TECHNOLOGY | YJQ4666B-YAN SMD P channel transistors |
auf Bestellung 3220 Stücke: Lieferzeit 7-14 Tag (e) |
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YJQ50N03A | Yangjie Technology |
Description: DFN(3.3x3.3) N 30V 50A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJQ50P03A | Yangjie Technology |
Description: DFN(3.3x3.3) P -30V -50A Transi Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJQ60N03A | Yangjie Technology |
Description: DFN(3.3x3.3) N 30V 60A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 500000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJQD12N03A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
Produkt ist nicht verfügbar |
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YJQD25N04A | Yangjie Technology | Description: Transistors - FETs, MOSFETs - Si |
auf Bestellung 500000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJR20N06A | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 495000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJS03N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W Type of transistor: N-MOSFET Technology: TRENCH POWER HV Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 15A Power dissipation: 1.5W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 19.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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YJS03N10A | Yangjie Technology |
Description: SOT-23-6L N 100V 3A Transistors Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJS03N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W Type of transistor: N-MOSFET Technology: TRENCH POWER HV Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 15A Power dissipation: 1.5W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 19.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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YJS05N06A | Yangjie Technology | Description: SOP-8 N 60V 5A Transistors FETs |
auf Bestellung 400000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJS05N15B | YANGJIE TECHNOLOGY | YJS05N15B-YAN SMD N channel transistors |
Produkt ist nicht verfügbar |
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YJS12G06A | YANGJIE TECHNOLOGY | YJS12G06A-YAN SMD N channel transistors |
Produkt ist nicht verfügbar |
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YJS12G06D | Yangjie Technology |
Description: SOP-8 N 60V 12A Transistors FET Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJS12G10A | Yangjie Technology |
Description: SOP-8 N 100V 12A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJS12N03A | Yangjie Technology |
Description: SOP-8 N 30V 12A Transistors FET Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJS12N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A Type of transistor: N-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.6A Pulsed drain current: 120A Power dissipation: 3.3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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YJS12N10A | YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A Type of transistor: N-MOSFET Technology: SPLIT GATE TRENCH Polarisation: unipolar Drain-source voltage: 100V Drain current: 7.6A Pulsed drain current: 120A Power dissipation: 3.3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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YJS18N03A | Yangjie Technology | Description: SOP-8 N 30V 18A Transistors FET |
auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJS2022A | YANGJIE TECHNOLOGY | YJS2022A-YAN SMD P channel transistors |
auf Bestellung 11278 Stücke: Lieferzeit 7-14 Tag (e) |
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YJS2301A | Yangjie Technology |
Description: SOT-23-6L P -20V -3.7A Transist Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 300000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJS2301A | YANGJIE TECHNOLOGY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A Type of transistor: P-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -16A Power dissipation: 1.3W Case: SOT23-6 Gate-source voltage: ±10V On-state resistance: 95mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2540 Stücke: Lieferzeit 14-21 Tag (e) |
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YJS2301A | YANGJIE TECHNOLOGY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A Type of transistor: P-MOSFET x2 Technology: TRENCH POWER LV Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Pulsed drain current: -16A Power dissipation: 1.3W Case: SOT23-6 Gate-source voltage: ±10V On-state resistance: 95mΩ Mounting: SMD Gate charge: 4.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10 Stücke |
auf Bestellung 2540 Stücke: Lieferzeit 7-14 Tag (e) |
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YJS3404A | Yangjie Technology |
Description: SOP-8 N 30V 8.5A Transistors FE Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJS4407J | Yangjie Technology |
Description: Transistors - FETs, MOSFETs - Si Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 400000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJS4409A | Yangjie Technology | Description: SOP-8 P -30V -18A Transistors F |
auf Bestellung 400000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJS4435A | Yangjie Technology | Description: SOP-8 P -30V -10A Transistors F |
auf Bestellung 400000 Stücke: Lieferzeit 21-28 Tag (e) |
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YJL3401AL |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
245+ | 0.29 EUR |
YJL3401AL |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.5A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -27A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 245 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
245+ | 0.29 EUR |
370+ | 0.2 EUR |
1020+ | 0.07 EUR |
3000+ | 0.042 EUR |
YJL3401AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
15000+ | 0.16 EUR |
30000+ | 0.15 EUR |
60000+ | 0.14 EUR |
120000+ | 0.12 EUR |
300000+ | 0.11 EUR |
YJL3404A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL3404A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 30V; 4.5A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJL3404AQ |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
15000+ | 0.16 EUR |
30000+ | 0.15 EUR |
60000+ | 0.14 EUR |
120000+ | 0.13 EUR |
300000+ | 0.12 EUR |
YJL3407A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL3407A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.2W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
YJL3407AL |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJL3407AL |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -3.2A; 1.5W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.2A
Pulsed drain current: -15A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
YJM04N10A |
Hersteller: Yangjie Technology
Description: SOT-223 N 100V 4A Transistors F
Description: SOT-223 N 100V 4A Transistors F
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.25 EUR |
YJM04N10A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 16A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 16A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJM04N10A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 16A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 3.2A; 2.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.2A
Pulsed drain current: 16A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
YJM05N06A |
Hersteller: Yangjie Technology
Description: SOT-223 N 60V 5A Transistors FE
Description: SOT-223 N 60V 5A Transistors FE
auf Bestellung 250000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.29 EUR |
12500+ | 0.28 EUR |
25000+ | 0.26 EUR |
50000+ | 0.25 EUR |
100000+ | 0.22 EUR |
250000+ | 0.2 EUR |
YJP25N15B |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 11.6nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 11.6nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJP25N15B |
Hersteller: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 11.6nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 52W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 11.6nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
YJQ13N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
15000+ | 0.2 EUR |
30000+ | 0.19 EUR |
60000+ | 0.18 EUR |
120000+ | 0.16 EUR |
300000+ | 0.15 EUR |
YJQ15GP10A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 120mΩ
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 120mΩ
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 9372 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
174+ | 0.41 EUR |
240+ | 0.3 EUR |
320+ | 0.22 EUR |
339+ | 0.21 EUR |
YJQ15GP10A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 120mΩ
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SPLIT GATE TRENCH; unipolar; -100V; -9.5A
Type of transistor: P-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -9.5A
Pulsed drain current: -45A
Power dissipation: 17.2W
Case: DFN3.3x3.3 EP
Gate-source voltage: ±20V
On-state resistance: 120mΩ
Mounting: SMD
Gate charge: 3.98nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9372 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
174+ | 0.41 EUR |
240+ | 0.3 EUR |
320+ | 0.22 EUR |
339+ | 0.21 EUR |
YJQ2012A |
Hersteller: Yangjie Technology
Description: DFN2020-6L N 20V 12A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN2020-6L N 20V 12A Transistor
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
15000+ | 0.16 EUR |
30000+ | 0.15 EUR |
120000+ | 0.13 EUR |
300000+ | 0.12 EUR |
YJQ20N04A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 40V 20A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) N 40V 20A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.34 EUR |
25000+ | 0.32 EUR |
50000+ | 0.3 EUR |
100000+ | 0.28 EUR |
200000+ | 0.25 EUR |
500000+ | 0.23 EUR |
YJQ20P03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.37 EUR |
25000+ | 0.35 EUR |
50000+ | 0.33 EUR |
100000+ | 0.3 EUR |
200000+ | 0.28 EUR |
500000+ | 0.26 EUR |
YJQ2301A |
Hersteller: Yangjie Technology
Description: DFN2020-6L P -20V -4A Transisto
Description: DFN2020-6L P -20V -4A Transisto
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
15000+ | 0.2 EUR |
30000+ | 0.19 EUR |
60000+ | 0.18 EUR |
120000+ | 0.16 EUR |
300000+ | 0.15 EUR |
YJQ3400A |
Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Pulsed drain current: 30A
Power dissipation: 2W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Pulsed drain current: 30A
Power dissipation: 2W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2760 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
470+ | 0.15 EUR |
830+ | 0.087 EUR |
1025+ | 0.07 EUR |
1080+ | 0.066 EUR |
YJQ3400A |
Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Pulsed drain current: 30A
Power dissipation: 2W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TRENCH POWER LV; unipolar; 30V; 6.2A
Type of transistor: N-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.2A
Pulsed drain current: 30A
Power dissipation: 2W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2760 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
470+ | 0.15 EUR |
830+ | 0.087 EUR |
1025+ | 0.07 EUR |
1080+ | 0.066 EUR |
YJQ3407A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.4A
Pulsed drain current: -22A
Power dissipation: 1.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 11.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.4A
Pulsed drain current: -22A
Power dissipation: 1.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 11.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJQ3407A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.4A
Pulsed drain current: -22A
Power dissipation: 1.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 11.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TRENCH POWER LV; unipolar; -30V; -4.4A; 1.4W
Type of transistor: P-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.4A
Pulsed drain current: -22A
Power dissipation: 1.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 11.65nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
YJQ35G10A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 120A
Power dissipation: 54W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 120A
Power dissipation: 54W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJQ35G10A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 120A
Power dissipation: 54W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 120A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 120A
Power dissipation: 54W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
YJQ35N04A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 40V 35A Transist
Description: DFN(3.3x3.3) N 40V 35A Transist
auf Bestellung 500000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.46 EUR |
25000+ | 0.44 EUR |
50000+ | 0.41 EUR |
100000+ | 0.38 EUR |
200000+ | 0.35 EUR |
500000+ | 0.32 EUR |
YJQ35N04A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2660 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
310+ | 0.23 EUR |
340+ | 0.21 EUR |
425+ | 0.17 EUR |
450+ | 0.16 EUR |
YJQ35N04A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 40V; 23A; 40W
Type of transistor: N-MOSFET
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Pulsed drain current: 120A
Power dissipation: 40W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2660 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
310+ | 0.23 EUR |
340+ | 0.21 EUR |
425+ | 0.17 EUR |
450+ | 0.16 EUR |
YJQ4606A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
auf Bestellung 500000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.3 EUR |
25000+ | 0.28 EUR |
50000+ | 0.27 EUR |
100000+ | 0.25 EUR |
200000+ | 0.23 EUR |
500000+ | 0.21 EUR |
YJQ4666B |
Hersteller: YANGJIE TECHNOLOGY
YJQ4666B-YAN SMD P channel transistors
YJQ4666B-YAN SMD P channel transistors
auf Bestellung 3220 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
677+ | 0.11 EUR |
1139+ | 0.063 EUR |
1205+ | 0.059 EUR |
YJQ50N03A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 30V 50A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) N 30V 50A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.45 EUR |
25000+ | 0.42 EUR |
50000+ | 0.4 EUR |
100000+ | 0.37 EUR |
200000+ | 0.34 EUR |
500000+ | 0.31 EUR |
YJQ50P03A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) P -30V -50A Transi
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) P -30V -50A Transi
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.88 EUR |
25000+ | 0.83 EUR |
50000+ | 0.79 EUR |
100000+ | 0.74 EUR |
200000+ | 0.66 EUR |
500000+ | 0.61 EUR |
YJQ60N03A |
Hersteller: Yangjie Technology
Description: DFN(3.3x3.3) N 30V 60A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DFN(3.3x3.3) N 30V 60A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 500000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.72 EUR |
25000+ | 0.68 EUR |
50000+ | 0.64 EUR |
100000+ | 0.6 EUR |
200000+ | 0.54 EUR |
500000+ | 0.5 EUR |
YJQD12N03A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
Produkt ist nicht verfügbar
YJQD25N04A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Description: Transistors - FETs, MOSFETs - Si
auf Bestellung 500000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.46 EUR |
25000+ | 0.44 EUR |
50000+ | 0.41 EUR |
100000+ | 0.38 EUR |
200000+ | 0.35 EUR |
500000+ | 0.32 EUR |
YJR20N06A |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 495000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4950+ | 0.37 EUR |
24750+ | 0.35 EUR |
49500+ | 0.33 EUR |
99000+ | 0.31 EUR |
198000+ | 0.28 EUR |
495000+ | 0.26 EUR |
YJS03N10A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER HV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER HV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJS03N10A |
Hersteller: Yangjie Technology
Description: SOT-23-6L N 100V 3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23-6L N 100V 3A Transistors
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.24 EUR |
15000+ | 0.23 EUR |
30000+ | 0.21 EUR |
60000+ | 0.2 EUR |
120000+ | 0.18 EUR |
300000+ | 0.17 EUR |
YJS03N10A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER HV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER HV; unipolar; 100V; 2.4A; 1.5W
Type of transistor: N-MOSFET
Technology: TRENCH POWER HV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 15A
Power dissipation: 1.5W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 19.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
YJS05N06A |
Hersteller: Yangjie Technology
Description: SOP-8 N 60V 5A Transistors FETs
Description: SOP-8 N 60V 5A Transistors FETs
auf Bestellung 400000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.38 EUR |
20000+ | 0.36 EUR |
40000+ | 0.34 EUR |
80000+ | 0.32 EUR |
160000+ | 0.29 EUR |
400000+ | 0.27 EUR |
YJS05N15B |
Hersteller: YANGJIE TECHNOLOGY
YJS05N15B-YAN SMD N channel transistors
YJS05N15B-YAN SMD N channel transistors
Produkt ist nicht verfügbar
YJS12G06A |
Hersteller: YANGJIE TECHNOLOGY
YJS12G06A-YAN SMD N channel transistors
YJS12G06A-YAN SMD N channel transistors
Produkt ist nicht verfügbar
YJS12G06D |
Hersteller: Yangjie Technology
Description: SOP-8 N 60V 12A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOP-8 N 60V 12A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.7 EUR |
20000+ | 0.66 EUR |
40000+ | 0.62 EUR |
80000+ | 0.58 EUR |
160000+ | 0.52 EUR |
400000+ | 0.48 EUR |
YJS12G10A |
Hersteller: Yangjie Technology
Description: SOP-8 N 100V 12A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOP-8 N 100V 12A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.64 EUR |
20000+ | 0.6 EUR |
40000+ | 0.57 EUR |
80000+ | 0.53 EUR |
160000+ | 0.48 EUR |
400000+ | 0.44 EUR |
YJS12N03A |
Hersteller: Yangjie Technology
Description: SOP-8 N 30V 12A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOP-8 N 30V 12A Transistors FET
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.25 EUR |
20000+ | 0.24 EUR |
40000+ | 0.23 EUR |
80000+ | 0.21 EUR |
160000+ | 0.19 EUR |
400000+ | 0.18 EUR |
YJS12N10A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.6A
Pulsed drain current: 120A
Power dissipation: 3.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.6A
Pulsed drain current: 120A
Power dissipation: 3.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
YJS12N10A |
Hersteller: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.6A
Pulsed drain current: 120A
Power dissipation: 3.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A
Type of transistor: N-MOSFET
Technology: SPLIT GATE TRENCH
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7.6A
Pulsed drain current: 120A
Power dissipation: 3.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
YJS18N03A |
Hersteller: Yangjie Technology
Description: SOP-8 N 30V 18A Transistors FET
Description: SOP-8 N 30V 18A Transistors FET
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.29 EUR |
YJS2022A |
Hersteller: YANGJIE TECHNOLOGY
YJS2022A-YAN SMD P channel transistors
YJS2022A-YAN SMD P channel transistors
auf Bestellung 11278 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
110+ | 0.65 EUR |
736+ | 0.097 EUR |
782+ | 0.092 EUR |
YJS2301A |
Hersteller: Yangjie Technology
Description: SOT-23-6L P -20V -3.7A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOT-23-6L P -20V -3.7A Transist
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 300000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
15000+ | 0.16 EUR |
30000+ | 0.15 EUR |
120000+ | 0.13 EUR |
300000+ | 0.12 EUR |
YJS2301A |
Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A
Type of transistor: P-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -16A
Power dissipation: 1.3W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A
Type of transistor: P-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -16A
Power dissipation: 1.3W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2540 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
790+ | 0.092 EUR |
870+ | 0.082 EUR |
1140+ | 0.063 EUR |
1200+ | 0.06 EUR |
YJS2301A |
Hersteller: YANGJIE TECHNOLOGY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A
Type of transistor: P-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -16A
Power dissipation: 1.3W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TRENCH POWER LV; unipolar; -20V; -3A
Type of transistor: P-MOSFET x2
Technology: TRENCH POWER LV
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Pulsed drain current: -16A
Power dissipation: 1.3W
Case: SOT23-6
Gate-source voltage: ±10V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2540 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
790+ | 0.092 EUR |
870+ | 0.082 EUR |
1140+ | 0.063 EUR |
1200+ | 0.06 EUR |
YJS3404A |
Hersteller: Yangjie Technology
Description: SOP-8 N 30V 8.5A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
Description: SOP-8 N 30V 8.5A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.22 EUR |
20000+ | 0.21 EUR |
40000+ | 0.19 EUR |
80000+ | 0.18 EUR |
160000+ | 0.16 EUR |
400000+ | 0.15 EUR |
YJS4407J |
Hersteller: Yangjie Technology
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
Description: Transistors - FETs, MOSFETs - Si
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 400000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.39 EUR |
20000+ | 0.37 EUR |
40000+ | 0.35 EUR |
80000+ | 0.32 EUR |
160000+ | 0.29 EUR |
400000+ | 0.27 EUR |
YJS4409A |
Hersteller: Yangjie Technology
Description: SOP-8 P -30V -18A Transistors F
Description: SOP-8 P -30V -18A Transistors F
auf Bestellung 400000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.74 EUR |
20000+ | 0.69 EUR |
40000+ | 0.65 EUR |
80000+ | 0.61 EUR |
160000+ | 0.55 EUR |
400000+ | 0.51 EUR |
YJS4435A |
Hersteller: Yangjie Technology
Description: SOP-8 P -30V -10A Transistors F
Description: SOP-8 P -30V -10A Transistors F
auf Bestellung 400000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.25 EUR |
20000+ | 0.23 EUR |
40000+ | 0.22 EUR |
80000+ | 0.2 EUR |
160000+ | 0.18 EUR |
400000+ | 0.17 EUR |