Produkte > GOFORD SEMICONDUCTOR > Alle Produkte des Herstellers GOFORD SEMICONDUCTOR (1230) > Seite 20 nach 21

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 4 6 8 10 12 14 15 16 17 18 19 20 21  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
GT110N06SH GOFORD Semiconductor GT110N06SH.pdf GT110N06SH
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.24 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10D3 GOFORD SEMICONDUCTOR GT130N10D3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 52A; 71W; DFN3x3-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 71W
Case: DFN3x3-8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10D3 GT130N10D3 Goford Semiconductor GT130N10D3.pdf Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10D3 GT130N10D3 Goford Semiconductor GT130N10D3.pdf Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.41 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10D3 GT130N10D3 Goford Semiconductor GT130N10D3.pdf Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
auf Bestellung 2860 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.27 EUR
13+1.44 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10F GOFORD Semiconductor GT130N10F.pdf GT130N10F
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
275+0.53 EUR
Mindestbestellmenge: 275
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10F GT130N10F Goford Semiconductor GT130N10F.pdf Description: MOSFET N-CH 100V 45A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.6 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10F GOFORD SEMICONDUCTOR GT130N10F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 45A; 41.7W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 41.7W
Case: TO220F
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 18nC
Kind of channel: enhancement
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10F GT130N10F Goford Semiconductor GT130N10F.pdf Description: MOSFET N-CH 100V 45A 41.7W 12m(
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.57 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10K GT130N10K Goford Semiconductor GT130N10K.pdf Description: MOSFET N-CH 100V 60A 73.5W TO-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10K GT130N10K Goford Semiconductor GT130N10K.pdf Description: MOSFET N-CH 100V 60A 73.5W TO-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
auf Bestellung 2324 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.36 EUR
12+1.49 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10M GT130N10M Goford Semiconductor GT130N10M.pdf Description: MOSFET N-CH 100V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1222 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+0.94 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10M GT130N10M Goford Semiconductor GT130N10M.pdf Description: MOSFET N-CH 100V 60A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1222 pF @ 50 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.94 EUR
10+1.88 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
GT150N12T GOFORD Semiconductor GOFORD-GT150N12T.pdf GT150N12T
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.58 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
GT150N12T GT150N12T Goford Semiconductor GOFORD-GT150N12T.pdf Description: MOSFET N-CH 120V 55A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1596 pF @ 60 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.01 EUR
11+1.64 EUR
100+1.28 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
GT150N12T GT150N12T Goford Semiconductor GOFORD-GT150N12T.pdf Description: MOSFET N-CH 120V 55A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1596 pF @ 60 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.65 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT180N12K GT180N12K Goford Semiconductor GT100N12K.pdf Description: MOSFET N-CH 120V 70A 100W 10M(M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT180N12K GT180N12K Goford Semiconductor GT100N12K.pdf Description: MOSFET N-CH 120V 70A 100W 10M(M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 60 V
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.34 EUR
12+1.48 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
GT180N12M GT180N12M Goford Semiconductor GT180N12M.pdf Description: MOSFET N-CH 120V 55A 96W TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT180N12M GT180N12M Goford Semiconductor GT180N12M.pdf Description: MOSFET N-CH 120V 55A 96W TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.8 EUR
10+1.77 EUR
100+1.18 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GT180N12M GT180N12M Goford Semiconductor GT180N12M.pdf Description: MOSFET N-CH 120V 55A 96W 17m(max
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+0.6 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT180P08T GOFORD Semiconductor P-Channel Enhancement Mode Power MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
150+0.99 EUR
Mindestbestellmenge: 150
Im Einkaufswagen  Stück im Wert von  UAH
GT1K2P15M GOFORD Semiconductor GT1K2P15M
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.87 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10M GOFORD Semiconductor P-Channel Enhancement Mode Power MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.11 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10M GOFORD SEMICONDUCTOR Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -56A; 173.6W; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SGT
Mounting: SMD
Case: TO263
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -56A
Gate charge: 73nC
Gate-source voltage: ±20V
Power dissipation: 173.6W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10T GOFORD SEMICONDUCTOR GT250P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -56A; 173.6W; TO220
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SGT
Mounting: THT
Case: TO220
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -56A
Gate charge: 73nC
Gate-source voltage: ±20V
Power dissipation: 173.6W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10T GOFORD Semiconductor GT250P10T.pdf P-Channel Enhancement Mode Power MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.06 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10T GOFORD Semiconductor GT250P10T.pdf P-Channel Enhancement Mode Power MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
150+1.01 EUR
Mindestbestellmenge: 150
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10T GT250P10T Goford Semiconductor GT250P10T.pdf Description: MOSFET P-CH 100V 56A 173.6W 30m(
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 173.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4059 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.1 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10T GT250P10T Goford Semiconductor GT250P10T.pdf Description: MOSFET P-CH 100V 56A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 173.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4059 pF @ 50 V
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.17 EUR
50+2.06 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
GT2K0P20K GT2K0P20K Goford Semiconductor GT2K0P20K.pdf Description: MOSFET P-CH 200V 18A 138W 220M(M
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.75 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
GT2K0P20K GT2K0P20K Goford Semiconductor GT2K0P20K.pdf Description: MOSFET P-CH 200V 18A 138W 220M(M
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT2K0P20K GOFORD Semiconductor GT2K0P20K.pdf GT2K0P20K
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.61 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
GT2K0P20M GOFORD Semiconductor GT2K0P20M
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.58 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT2K0P20T GOFORD Semiconductor GT2K0P20T
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.7 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT2K6P15K GOFORD Semiconductor GT2K6P15K
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.32 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
GT2K6P15S GOFORD Semiconductor GT2K6P15S
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.27 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
GT2K6P15T GOFORD Semiconductor GT2K6P15T
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.46 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10K GT400P10K Goford Semiconductor GOFORD-GT400P10K.pdf Description: MOSFET P-CH 100V 35A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10K GT400P10K Goford Semiconductor GOFORD-GT400P10K.pdf Description: MOSFET P-CH 100V 35A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V
auf Bestellung 1610 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.52 EUR
10+2.06 EUR
100+1.6 EUR
500+1.36 EUR
1000+1.11 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10K GT400P10K Goford Semiconductor GOFORD-GT400P10K.pdf Description: MOSFET P-CH 100V 35A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.82 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10K GOFORD Semiconductor GOFORD-GT400P10K.pdf GT400P10K
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.77 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10K GOFORD SEMICONDUCTOR GOFORD-GT400P10K.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -35A; 106W; TO252
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Gate charge: 41nC
Power dissipation: 106W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10M GOFORD SEMICONDUCTOR GOFORD-GT400P10M.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -35A; 106W; TO263
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Gate charge: 46nC
Power dissipation: 106W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10M GOFORD Semiconductor GOFORD-GT400P10M.pdf GT400P10M
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.94 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10M GT400P10M Goford Semiconductor GOFORD-GT400P10M.pdf Description: MOSFET P-CH 100V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.53 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10M GT400P10M Goford Semiconductor GOFORD-GT400P10M.pdf Description: MOSFET P-CH 100V 35A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+2.27 EUR
100+1.81 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10M GT400P10M Goford Semiconductor GOFORD-GT400P10M.pdf Description: MOSFET P-CH 100V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+1 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10T GT400P10T Goford Semiconductor GOFORD-GT400P10T.pdf Description: MOSFET P-CH 100V 35A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 50 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.64 EUR
10+2.19 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10T GOFORD SEMICONDUCTOR GOFORD-GT400P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -35A; 106W; TO220
Case: TO220
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Gate charge: 46nC
Power dissipation: 106W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10T GOFORD Semiconductor GOFORD-GT400P10T.pdf GT400P10T
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.9 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10T GT400P10T Goford Semiconductor GOFORD-GT400P10T.pdf Description: MOSFET P-CH 100V 35A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.95 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT52N10D5 GOFORD Semiconductor GT52N10D5.pdf N-Channel Enhancement Mode Power MOSFET
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.67 EUR
15000+0.6 EUR
30000+0.52 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
GT52N10D5 GT52N10D5 Goford Semiconductor GT52N10D5.pdf Description: MOSFET N-CH 100V 71A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2626 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.73 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
GT52N10D5 GT52N10D5 Goford Semiconductor GT52N10D5.pdf Description: N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.83 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
GT52N10D5 GT52N10D5 Goford Semiconductor GT52N10D5.pdf Description: N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V
auf Bestellung 6619 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.1 EUR
10+1.98 EUR
100+1.34 EUR
500+1.07 EUR
1000+1.01 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
GT52N10D5I GT52N10D5I Goford Semiconductor Description: N100V,65A,RD<8M@10V,VTH1.0V~2.5V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 20A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2428 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT52N10T GOFORD Semiconductor N-Channel Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
203+0.71 EUR
15000+0.64 EUR
30000+0.55 EUR
Mindestbestellmenge: 203
Im Einkaufswagen  Stück im Wert von  UAH
GT55N06D5 GT55N06D5 Goford Semiconductor GT55N06D5.pdf Description: N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT55N06D5 GT55N06D5 Goford Semiconductor GT55N06D5.pdf Description: N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 30 V
auf Bestellung 1056 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
14+1.32 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
GT110N06SH GT110N06SH.pdf
Hersteller: GOFORD Semiconductor
GT110N06SH
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.24 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10D3 GT130N10D3.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 52A; 71W; DFN3x3-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Power dissipation: 71W
Case: DFN3x3-8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10D3 GT130N10D3.pdf
GT130N10D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10D3 GT130N10D3.pdf
GT130N10D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.41 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10D3 GT130N10D3.pdf
GT130N10D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
auf Bestellung 2860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
13+1.44 EUR
100+0.96 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10F GT130N10F.pdf
Hersteller: GOFORD Semiconductor
GT130N10F
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
275+0.53 EUR
Mindestbestellmenge: 275
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10F GT130N10F.pdf
GT130N10F
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 45A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10F GT130N10F.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 45A; 41.7W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Power dissipation: 41.7W
Case: TO220F
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 18nC
Kind of channel: enhancement
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10F GT130N10F.pdf
GT130N10F
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 45A 41.7W 12m(
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 41.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.57 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10K GT130N10K.pdf
GT130N10K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 60A 73.5W TO-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10K GT130N10K.pdf
GT130N10K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 60A 73.5W TO-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 50 V
auf Bestellung 2324 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
12+1.49 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10M GT130N10M.pdf
GT130N10M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1222 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.94 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT130N10M GT130N10M.pdf
GT130N10M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 60A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 73.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1222 pF @ 50 V
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
10+1.88 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
GT150N12T GOFORD-GT150N12T.pdf
Hersteller: GOFORD Semiconductor
GT150N12T
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.58 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
GT150N12T GOFORD-GT150N12T.pdf
GT150N12T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 120V 55A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1596 pF @ 60 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
11+1.64 EUR
100+1.28 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
GT150N12T GOFORD-GT150N12T.pdf
GT150N12T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 120V 55A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1596 pF @ 60 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.65 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT180N12K GT100N12K.pdf
GT180N12K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 120V 70A 100W 10M(M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT180N12K GT100N12K.pdf
GT180N12K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 120V 70A 100W 10M(M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 60 V
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
12+1.48 EUR
100+0.99 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
GT180N12M GT180N12M.pdf
GT180N12M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 120V 55A 96W TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT180N12M GT180N12M.pdf
GT180N12M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 120V 55A 96W TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
10+1.77 EUR
100+1.18 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GT180N12M GT180N12M.pdf
GT180N12M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 120V 55A 96W 17m(max
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1635 pF @ 60 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.6 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT180P08T
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
150+0.99 EUR
Mindestbestellmenge: 150
Im Einkaufswagen  Stück im Wert von  UAH
GT1K2P15M
Hersteller: GOFORD Semiconductor
GT1K2P15M
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.87 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10M
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.11 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10M
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -56A; 173.6W; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SGT
Mounting: SMD
Case: TO263
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -56A
Gate charge: 73nC
Gate-source voltage: ±20V
Power dissipation: 173.6W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10T GT250P10T.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -56A; 173.6W; TO220
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SGT
Mounting: THT
Case: TO220
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -56A
Gate charge: 73nC
Gate-source voltage: ±20V
Power dissipation: 173.6W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10T GT250P10T.pdf
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.06 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10T GT250P10T.pdf
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
150+1.01 EUR
Mindestbestellmenge: 150
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10T GT250P10T.pdf
GT250P10T
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 100V 56A 173.6W 30m(
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 173.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4059 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.1 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT250P10T GT250P10T.pdf
GT250P10T
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 100V 56A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 173.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4059 pF @ 50 V
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
50+2.06 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
GT2K0P20K GT2K0P20K.pdf
GT2K0P20K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 200V 18A 138W 220M(M
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.75 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
GT2K0P20K GT2K0P20K.pdf
GT2K0P20K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 200V 18A 138W 220M(M
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 15A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT2K0P20K GT2K0P20K.pdf
Hersteller: GOFORD Semiconductor
GT2K0P20K
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.61 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
GT2K0P20M
Hersteller: GOFORD Semiconductor
GT2K0P20M
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.58 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT2K0P20T
Hersteller: GOFORD Semiconductor
GT2K0P20T
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.7 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT2K6P15K
Hersteller: GOFORD Semiconductor
GT2K6P15K
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.32 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
GT2K6P15S
Hersteller: GOFORD Semiconductor
GT2K6P15S
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.27 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
GT2K6P15T
Hersteller: GOFORD Semiconductor
GT2K6P15T
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.46 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10K GOFORD-GT400P10K.pdf
GT400P10K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10K GOFORD-GT400P10K.pdf
GT400P10K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V
auf Bestellung 1610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
10+2.06 EUR
100+1.6 EUR
500+1.36 EUR
1000+1.11 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10K GOFORD-GT400P10K.pdf
GT400P10K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10K GOFORD-GT400P10K.pdf
Hersteller: GOFORD Semiconductor
GT400P10K
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.77 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10K GOFORD-GT400P10K.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -35A; 106W; TO252
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Gate charge: 41nC
Power dissipation: 106W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10M GOFORD-GT400P10M.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -35A; 106W; TO263
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Gate charge: 46nC
Power dissipation: 106W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10M GOFORD-GT400P10M.pdf
Hersteller: GOFORD Semiconductor
GT400P10M
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.94 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10M GOFORD-GT400P10M.pdf
GT400P10M
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.53 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10M GOFORD-GT400P10M.pdf
GT400P10M
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
10+2.27 EUR
100+1.81 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10M GOFORD-GT400P10M.pdf
GT400P10M
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10T GOFORD-GT400P10T.pdf
GT400P10T
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 50 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
10+2.19 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10T GOFORD-GT400P10T.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -35A; 106W; TO220
Case: TO220
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Gate charge: 46nC
Power dissipation: 106W
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10T GOFORD-GT400P10T.pdf
Hersteller: GOFORD Semiconductor
GT400P10T
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.9 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT400P10T GOFORD-GT400P10T.pdf
GT400P10T
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3223 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.95 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
GT52N10D5 GT52N10D5.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.67 EUR
15000+0.6 EUR
30000+0.52 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
GT52N10D5 GT52N10D5.pdf
GT52N10D5
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 71A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2626 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.73 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
GT52N10D5 GT52N10D5.pdf
GT52N10D5
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.83 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
GT52N10D5 GT52N10D5.pdf
GT52N10D5
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 50 V
auf Bestellung 6619 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.1 EUR
10+1.98 EUR
100+1.34 EUR
500+1.07 EUR
1000+1.01 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
GT52N10D5I
GT52N10D5I
Hersteller: Goford Semiconductor
Description: N100V,65A,RD<8M@10V,VTH1.0V~2.5V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 20A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2428 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT52N10T
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
203+0.71 EUR
15000+0.64 EUR
30000+0.55 EUR
Mindestbestellmenge: 203
Im Einkaufswagen  Stück im Wert von  UAH
GT55N06D5 GT55N06D5.pdf
GT55N06D5
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT55N06D5 GT55N06D5.pdf
GT55N06D5
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 30 V
auf Bestellung 1056 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
14+1.32 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 4 6 8 10 12 14 15 16 17 18 19 20 21  [ Nächste Seite >> ]