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03N06 03N06 Goford Semiconductor 03N06.pdf Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 30 V
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03N06 GOFORD Semiconductor 03N06.pdf N-CH 60V 3A 100mOhm/MAX at 10V, 120mOhm/MAX at 4.5V,SOT-23
auf Bestellung 150000 Stücke:
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03N06 03N06 Goford Semiconductor 03N06.pdf Description: MOSFET N-CH 60V 3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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03N06 03N06 Goford Semiconductor 03N06.pdf Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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03N06L 03N06L Goford Semiconductor 03N06L.pdf Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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03N06L 03N06L Goford Semiconductor 03N06L.pdf Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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03N06L 03N06L Goford Semiconductor 03N06L.pdf Description: MOSFET N-CH 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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03N06L GOFORD Semiconductor 03N06L.pdf N-CH 60V 3A 100mOhm/MAX at 10V, 120mOhm/MAX at 4.5V, SOT-23-3L
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06N06L 06N06L Goford Semiconductor 06N06L.pdf Description: N60V,RD(MAX)<42M@10V,RD(MAX)<46M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Power Dissipation (Max): 960mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
Produkt ist nicht verfügbar
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06N06L GOFORD Semiconductor 06N06L.pdf N-Channel Enhancement Mode Power MOSFET
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06N06L 06N06L Goford Semiconductor 06N06L.pdf Description: N60V,RD(MAX)<42M@10V,RD(MAX)<46M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Power Dissipation (Max): 960mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
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06N06L 06N06L Goford Semiconductor 06N06L.pdf Description: MOSFET N-CH 60V 5.5A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 960mW
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
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1002 GOFORD Semiconductor 1002.pdf Trench MOSFET
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1002 GOFORD Semiconductor 1002.pdf N100V,2A,RD(max) Less Than 250mOhm at 10V,RD(max) Less Than 260mOhm at 4.5V,VTH -1V to 3V, SOT-23
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1002 GOFORD Semiconductor 1002.pdf N100V,2A,RD(max) Less Than 250mOhm at 10V,RD(max) Less Than 260mOhm at 4.5V,VTH -1V to 3V, SOT-23
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1216D2 GOFORD Semiconductor P-CH -12V -16A 21mOhmMAX at -4.5V, 27mOhmMAX at -2.5V, DFN2x2-6L
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18N10 18N10 Goford Semiconductor 18N10.pdf Description: N100V,RD(MAX)<53M@10V,RD(MAX)<63
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2161 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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18N10 18N10 Goford Semiconductor 18N10.pdf Description: MOSFET N-CH 100V 25A TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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18N10 18N10 Goford Semiconductor 18N10.pdf Description: N100V,RD(MAX)<53M@10V,RD(MAX)<63
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2161 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1931 Stücke:
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18N10 GOFORD Semiconductor 18N10.pdf N-Channel Enhancement Mode Power MOSFET
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18N20 GOFORD Semiconductor 18N20.pdf N-CH 200V 18A 0.136OhmMAX at 10V TO-252
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18N20 18N20 Goford Semiconductor 18N20.pdf Description: N 200V, RD(MAX)<0.16@10V,VTH1.0V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 847 pF @ 25 V
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18N20 18N20 Goford Semiconductor 18N20.pdf Description: N 200V, RD(MAX)<0.16@10V,VTH1.0V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 847 pF @ 25 V
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18N20 GOFORD SEMICONDUCTOR 18N20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Planar; unipolar; 200V; 18A; 65.8W; TO252
Case: TO252
Mounting: SMD
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 65.8W
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Planar
Polarisation: unipolar
Gate charge: 18nC
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18N20F GOFORD Semiconductor 18N20F.pdf N-CH,200V,18A,RD(max) Less Than 0.19Ohm at 10V,VTH 1.0V to 3.0V, TO-220F
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18N20F GOFORD SEMICONDUCTOR 18N20F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Planar; unipolar; 200V; 18A; 35W; TO220F
Case: TO220F
Mounting: THT
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 35W
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Planar
Polarisation: unipolar
Gate charge: 18nC
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18N20F 18N20F Goford Semiconductor 18N20F.pdf Description: MOSFET N-CH 200V 18A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
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18N20J GOFORD Semiconductor 18N20J.pdf N-CH,200V,18A,RD(max) Less Than 0.16Ohm at 10V,VTH 1.0V to 3.0V, TO-251
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18N20J 18N20J Goford Semiconductor 18N20J.pdf Description: N200V, 18A,RD<0.16@10V,VTH1V~3V,
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V
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18N20J 18N20J Goford Semiconductor 18N20J.pdf Description: MOSFET N-CH 200V 18A TO-251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
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2002A 2002A Goford Semiconductor GOFORD-G2002A.pdf Description: N190V,5A,RD<540M@10V,VTH1.0V~3.0
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 190 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-6L
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.4W (Tc)
Produkt ist nicht verfügbar
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20N06 20N06 Goford Semiconductor GOFORD-20N06.pdf Description: N60V,25A,RD<24M@10V,VTH1.0V~2.5V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1609 pF @ 30 V
Produkt ist nicht verfügbar
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2300F GOFORD Semiconductor 2300F.pdf N-CH,20V,6A,RD(max) Less Than 27mOhm at 4.5V,RD(max)41mOhm at 2.5V,VTH 0.5V to 0.9V,SOT-23
auf Bestellung 276000 Stücke:
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30000+0.043 EUR
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2300F 2300F Goford Semiconductor 2300F.pdf Description: N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 10 V
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2300F 2300F Goford Semiconductor 2300F.pdf Description: N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 10 V
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2301 2301 Goford Semiconductor 2301.pdf Description: P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
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2301 2301 Goford Semiconductor 2301.pdf Description: MOSFET P-CH 20V 3A SOT-23
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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2301 GOFORD Semiconductor 2301.pdf Surface Mount MOSFET
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2301 GOFORD Semiconductor 2301.pdf Surface Mount MOSFET
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2301 2301 Goford Semiconductor 2301.pdf Description: P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 2.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2301H 2301H Goford Semiconductor 2301H.pdf Description: MOSFET P-CH 30V 2.8A SOT-23
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 890mW (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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2301H 2301H Goford Semiconductor 2301H.pdf Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 890mW (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Produkt ist nicht verfügbar
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2301H 2301H Goford Semiconductor 2301H.pdf Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 890mW (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2771 Stücke:
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67+0.32 EUR
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2302 GOFORD Semiconductor 2302.pdf N-Channel Enhancement Mode Power MOSFET
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3000+0.08 EUR
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2302 2302 Goford Semiconductor 2302.pdf Description: MOSFET N-CH 20V 4.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 356 pF @ 10 V
Produkt ist nicht verfügbar
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2302 2302 Goford Semiconductor 2302.pdf Description: MOSFET N-CH 20V 4.3A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 356 pF @ 10 V
auf Bestellung 264 Stücke:
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2302 GOFORD Semiconductor 2302.pdf N-Channel Enhancement Mode Power MOSFET
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2302 2302 GOFORD SEMICONDUCTOR 2302.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.5A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1W
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2302 GOFORD Semiconductor 2302.pdf N-Channel Enhancement Mode Power MOSFET
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25P06 25P06 Goford Semiconductor 25P06.pdf Description: P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V
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25P06 25P06 Goford Semiconductor 25P06.pdf Description: P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V
auf Bestellung 1186 Stücke:
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25P06 GOFORD Semiconductor 25P06.pdf P-CH,-60V,-25A,RD(max) Less Than 35mOhm at -10V,VTH -2.0V to -3.0V, TO-252
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25P06 25P06 Goford Semiconductor 25P06.pdf Description: MOSFET P-CH 60V 25A TO-252
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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3400 GOFORD Semiconductor 3400.pdf N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
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3400 GOFORD Semiconductor 3400.pdf N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
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3400 GOFORD Semiconductor 3400.pdf N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
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3400 GOFORD Semiconductor 3400.pdf N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
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3400 3400 Goford Semiconductor 3400.pdf Description: N30V,RD(MAX)<27M@10V,RD(MAX)<33M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 3A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
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3400 3400 Goford Semiconductor 3400.pdf Description: N30V,RD(MAX)<27M@10V,RD(MAX)<33M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 3A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
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58+0.37 EUR
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500+0.17 EUR
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3400 3400 Goford Semiconductor 3400.pdf Description: MOSFET N-CH 30V 5.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.8A, 2.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.073 EUR
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03N06 03N06.pdf
03N06
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 30 V
auf Bestellung 1620 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
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03N06 03N06.pdf
Hersteller: GOFORD Semiconductor
N-CH 60V 3A 100mOhm/MAX at 10V, 120mOhm/MAX at 4.5V,SOT-23
auf Bestellung 150000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.081 EUR
15000+0.073 EUR
30000+0.069 EUR
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03N06 03N06.pdf
03N06
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.082 EUR
15000+0.075 EUR
30000+0.073 EUR
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03N06 03N06.pdf
03N06
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
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03N06L 03N06L.pdf
03N06L
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
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03N06L 03N06L.pdf
03N06L
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 5925 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+0.71 EUR
48+0.44 EUR
100+0.27 EUR
500+0.2 EUR
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03N06L 03N06L.pdf
03N06L
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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03N06L 03N06L.pdf
Hersteller: GOFORD Semiconductor
N-CH 60V 3A 100mOhm/MAX at 10V, 120mOhm/MAX at 4.5V, SOT-23-3L
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.088 EUR
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06N06L 06N06L.pdf
06N06L
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<42M@10V,RD(MAX)<46M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Power Dissipation (Max): 960mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
Produkt ist nicht verfügbar
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06N06L 06N06L.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
15000+0.1 EUR
30000+0.088 EUR
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06N06L 06N06L.pdf
06N06L
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<42M@10V,RD(MAX)<46M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Power Dissipation (Max): 960mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
auf Bestellung 2971 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
36+0.58 EUR
100+0.37 EUR
500+0.29 EUR
1000+0.25 EUR
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06N06L 06N06L.pdf
06N06L
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 5.5A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 10V
Power Dissipation (Max): 960mW
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 30 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
15000+0.11 EUR
30000+0.095 EUR
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1002 1002.pdf
Hersteller: GOFORD Semiconductor
Trench MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.088 EUR
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1002 1002.pdf
Hersteller: GOFORD Semiconductor
N100V,2A,RD(max) Less Than 250mOhm at 10V,RD(max) Less Than 260mOhm at 4.5V,VTH -1V to 3V, SOT-23
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.065 EUR
15000+0.06 EUR
30000+0.052 EUR
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1002 1002.pdf
Hersteller: GOFORD Semiconductor
N100V,2A,RD(max) Less Than 250mOhm at 10V,RD(max) Less Than 260mOhm at 4.5V,VTH -1V to 3V, SOT-23
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.061 EUR
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1216D2
Hersteller: GOFORD Semiconductor
P-CH -12V -16A 21mOhmMAX at -4.5V, 27mOhmMAX at -2.5V, DFN2x2-6L
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
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3000+0.14 EUR
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18N10 18N10.pdf
18N10
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<53M@10V,RD(MAX)<63
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2161 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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18N10 18N10.pdf
18N10
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 25A TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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18N10 18N10.pdf
18N10
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<53M@10V,RD(MAX)<63
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2161 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1931 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.26 EUR
15+1.42 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.65 EUR
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18N10 18N10.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+0.32 EUR
15000+0.29 EUR
30000+0.26 EUR
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18N20 18N20.pdf
Hersteller: GOFORD Semiconductor
N-CH 200V 18A 0.136OhmMAX at 10V TO-252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+0.67 EUR
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18N20 18N20.pdf
18N20
Hersteller: Goford Semiconductor
Description: N 200V, RD(MAX)<0.16@10V,VTH1.0V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 847 pF @ 25 V
Produkt ist nicht verfügbar
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18N20 18N20.pdf
18N20
Hersteller: Goford Semiconductor
Description: N 200V, RD(MAX)<0.16@10V,VTH1.0V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 847 pF @ 25 V
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.19 EUR
11+2.01 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.96 EUR
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18N20 18N20.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Planar; unipolar; 200V; 18A; 65.8W; TO252
Case: TO252
Mounting: SMD
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 65.8W
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Planar
Polarisation: unipolar
Gate charge: 18nC
Produkt ist nicht verfügbar
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18N20F 18N20F.pdf
Hersteller: GOFORD Semiconductor
N-CH,200V,18A,RD(max) Less Than 0.19Ohm at 10V,VTH 1.0V to 3.0V, TO-220F
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+0.76 EUR
Mindestbestellmenge: 1000 Stücke
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18N20F 18N20F.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Planar; unipolar; 200V; 18A; 35W; TO220F
Case: TO220F
Mounting: THT
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 35W
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: Planar
Polarisation: unipolar
Gate charge: 18nC
Produkt ist nicht verfügbar
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18N20F 18N20F.pdf
18N20F
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 200V 18A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.77 EUR
Mindestbestellmenge: 2000 Stücke
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18N20J 18N20J.pdf
Hersteller: GOFORD Semiconductor
N-CH,200V,18A,RD(max) Less Than 0.16Ohm at 10V,VTH 1.0V to 3.0V, TO-251
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
285+0.62 EUR
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18N20J 18N20J.pdf
18N20J
Hersteller: Goford Semiconductor
Description: N200V, 18A,RD<0.16@10V,VTH1V~3V,
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
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7+3.22 EUR
75+1.44 EUR
150+1.29 EUR
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18N20J 18N20J.pdf
18N20J
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 200V 18A TO-251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
auf Bestellung 1500 Stücke:
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1500+0.62 EUR
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2002A GOFORD-G2002A.pdf
2002A
Hersteller: Goford Semiconductor
Description: N190V,5A,RD<540M@10V,VTH1.0V~3.0
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 190 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-6L
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 1.4W (Tc)
Produkt ist nicht verfügbar
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20N06 GOFORD-20N06.pdf
20N06
Hersteller: Goford Semiconductor
Description: N60V,25A,RD<24M@10V,VTH1.0V~2.5V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1609 pF @ 30 V
Produkt ist nicht verfügbar
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2300F 2300F.pdf
Hersteller: GOFORD Semiconductor
N-CH,20V,6A,RD(max) Less Than 27mOhm at 4.5V,RD(max)41mOhm at 2.5V,VTH 0.5V to 0.9V,SOT-23
auf Bestellung 276000 Stücke:
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3334+0.052 EUR
15000+0.049 EUR
30000+0.043 EUR
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2300F 2300F.pdf
2300F
Hersteller: Goford Semiconductor
Description: N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 10 V
Produkt ist nicht verfügbar
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2300F 2300F.pdf
2300F
Hersteller: Goford Semiconductor
Description: N20V, 6A,RD<27M@4.5V,VTH0.5V~0.9
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 10 V
auf Bestellung 1101 Stücke:
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63+0.33 EUR
101+0.21 EUR
500+0.15 EUR
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2301 2301.pdf
2301
Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1.7A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
auf Bestellung 3793 Stücke:
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32+0.67 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
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2301 2301.pdf
2301
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 20V 3A SOT-23
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 120000 Stücke:
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3000+0.06 EUR
15000+0.057 EUR
30000+0.052 EUR
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2301 2301.pdf
Hersteller: GOFORD Semiconductor
Surface Mount MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3125+0.056 EUR
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2301 2301.pdf
Hersteller: GOFORD Semiconductor
Surface Mount MOSFET
auf Bestellung 120000 Stücke:
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2301 2301.pdf
2301
Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<56M@-4.5V,RD(MAX)<8
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 2.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2301H 2301H.pdf
2301H
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 2.8A SOT-23
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 890mW (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
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AnzahlPrivatkunde
3000+0.062 EUR
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2301H 2301H.pdf
2301H
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 890mW (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Produkt ist nicht verfügbar
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2301H 2301H.pdf
2301H
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<130M@-4.5V,RD(MAX)<
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 890mW (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2771 Stücke:
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67+0.32 EUR
107+0.2 EUR
500+0.14 EUR
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2302 2302.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 150000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.08 EUR
15000+0.073 EUR
30000+0.064 EUR
50000+0.058 EUR
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2302 2302.pdf
2302
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 20V 4.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 356 pF @ 10 V
Produkt ist nicht verfügbar
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2302 2302.pdf
2302
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 20V 4.3A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.2A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 356 pF @ 10 V
auf Bestellung 264 Stücke:
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33+0.65 EUR
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2302 2302.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 150000 Stücke:
Lieferzeit 14-21 Tag (e)
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3449+0.051 EUR
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2302 2302.pdf
2302
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 4.5A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.5A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1W
auf Bestellung 3000 Stücke:
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107+0.8 EUR
151+0.56 EUR
282+0.3 EUR
652+0.13 EUR
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2302 2302.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
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Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3449+0.051 EUR
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25P06 25P06.pdf
25P06
Hersteller: Goford Semiconductor
Description: P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V
auf Bestellung 2500 Stücke:
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2500+0.67 EUR
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25P06 25P06.pdf
25P06
Hersteller: Goford Semiconductor
Description: P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2527 pF @ 30 V
auf Bestellung 1186 Stücke:
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14+1.59 EUR
100+1.06 EUR
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25P06 25P06.pdf
Hersteller: GOFORD Semiconductor
P-CH,-60V,-25A,RD(max) Less Than 35mOhm at -10V,VTH -2.0V to -3.0V, TO-252
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
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2500+0.4 EUR
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25P06 25P06.pdf
25P06
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 25A TO-252
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
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2500+0.43 EUR
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3400 3400.pdf
Hersteller: GOFORD Semiconductor
N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
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3400 3400.pdf
Hersteller: GOFORD Semiconductor
N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.061 EUR
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3400 3400.pdf
Hersteller: GOFORD Semiconductor
N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
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3000+0.073 EUR
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3400 3400.pdf
Hersteller: GOFORD Semiconductor
N-CH 30V 5.6A 27mOhm/MAX at 10V, 33mOhm/MAX at 4.5V,SOT-23
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.067 EUR
15000+0.062 EUR
30000+0.057 EUR
Mindestbestellmenge: 3000 Stücke
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Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<27M@10V,RD(MAX)<33M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 3A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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3400
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<27M@10V,RD(MAX)<33M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 3A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
auf Bestellung 3640 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
58+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 35 Stücke
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3400
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 5.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.8A, 2.5V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.073 EUR
Mindestbestellmenge: 3000 Stücke
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