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GT095N10D5 GT095N10D5 Goford Semiconductor GT095N10D5.pdf Description: N100V,RD(MAX)<11M@10V,RD(MAX)<15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.67 EUR
Mindestbestellmenge: 5000
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GT095N10D5 GT095N10D5 Goford Semiconductor GT095N10D5.pdf Description: N100V,RD(MAX)<11M@10V,RD(MAX)<15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 50 V
auf Bestellung 4841 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.75 EUR
11+1.74 EUR
100+1.16 EUR
500+0.92 EUR
1000+0.84 EUR
2000+0.77 EUR
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GT095N10D5 GOFORD Semiconductor GT095N10D5.pdf N-Channel Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.41 EUR
Mindestbestellmenge: 5000
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GT095N10K GT095N10K Goford Semiconductor GT095N10K.pdf Description: N100V, RD(MAX)<10.5M@10V,RD(MAX)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 50 V
Produkt ist nicht verfügbar
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GT095N10K GT095N10K Goford Semiconductor GT095N10K.pdf Description: N100V, RD(MAX)<10.5M@10V,RD(MAX)
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 50 V
auf Bestellung 3922 Stücke:
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11+1.73 EUR
100+1.16 EUR
500+0.91 EUR
1000+0.83 EUR
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GT095N10S GT095N10S Goford Semiconductor GOFORD-GT095N10S.pdf Description: MOSFET N-CH 100V 11A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 20000 Stücke:
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4000+0.49 EUR
16000+0.45 EUR
Mindestbestellmenge: 4000
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GT1003A GT1003A Goford Semiconductor GT1003A.pdf Description: N100V, 3A,RD<140M@10V,VTH1.0V~3.
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V
auf Bestellung 1947 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
40+0.45 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.19 EUR
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GT1003A GT1003A Goford Semiconductor GT1003A.pdf Description: MOSFET N-CH 100V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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GT1003A GOFORD Semiconductor GT1003A.pdf High Density Cell Design MOSFET
auf Bestellung 90000 Stücke:
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3000+0.084 EUR
15000+0.075 EUR
30000+0.064 EUR
Mindestbestellmenge: 3000
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GT1003A GT1003A Goford Semiconductor GT1003A.pdf Description: N100V, 3A,RD<140M@10V,VTH1.0V~3.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V
Produkt ist nicht verfügbar
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GT1003D GT1003D Goford Semiconductor GT1003D.pdf Description: N100V,RD(MAX)<130M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V
auf Bestellung 4370 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
45+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.16 EUR
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GT1003D GOFORD Semiconductor GT1003D.pdf N-Channel Enhancement Mode Power MOSFET
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.074 EUR
15000+0.065 EUR
30000+0.058 EUR
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GT1003D GT1003D Goford Semiconductor GT1003D.pdf Description: MOSFET N-CH 100V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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GT1003D GT1003D Goford Semiconductor GT1003D.pdf Description: N100V,RD(MAX)<130M@10V,RD(MAX)<1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V
Produkt ist nicht verfügbar
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GT100N04D3 GT100N04D3 Goford Semiconductor GT100N04D3.pdf Description: MOSFET N-CH 40V 13A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 5000 Stücke:
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5000+0.18 EUR
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GT100N04D3 GT100N04D3 Goford Semiconductor GT100N04D3.pdf Description: N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V
auf Bestellung 5000 Stücke:
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5000+0.22 EUR
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GT100N04D3 GT100N04D3 Goford Semiconductor GT100N04D3.pdf Description: N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V
auf Bestellung 1760 Stücke:
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100+0.41 EUR
500+0.31 EUR
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GT100N04D3 GOFORD Semiconductor GT100N04D3.pdf N-CH,40V,13A,RD(max) Less Than 10mOhm at 10V,RD(max) Less Than 16mOhm at 4.5V,VTH 1.0V to 2.5V,DFN3x3-8L
auf Bestellung 5000 Stücke:
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GT100N12D5 GT100N12D5 Goford Semiconductor products-detail.php?ProId=588 Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
auf Bestellung 5000 Stücke:
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5000+1.29 EUR
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GT100N12D5 GT100N12D5 Goford Semiconductor products-detail.php?ProId=588 Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
auf Bestellung 9965 Stücke:
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7+2.78 EUR
10+2.5 EUR
100+2.01 EUR
500+1.65 EUR
1000+1.37 EUR
2000+1.29 EUR
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GT100N12K GOFORD Semiconductor GT100N12K.pdf GT100N12K
auf Bestellung 2500 Stücke:
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GT100N12K GT100N12K Goford Semiconductor GT100N12K.pdf Description: N120V,65A,RD<12M@10V,VTH2.5V~3.5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 35A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2911 pF @ 60 V
auf Bestellung 2500 Stücke:
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2500+0.96 EUR
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GT100N12K GT100N12K Goford Semiconductor GT100N12K.pdf Description: N120V,65A,RD<12M@10V,VTH2.5V~3.5
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 35A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2911 pF @ 60 V
Produkt ist nicht verfügbar
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GT100N12M GT100N12M Goford Semiconductor GT100N12M.pdf Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
Produkt ist nicht verfügbar
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GT100N12M GT100N12M Goford Semiconductor GT100N12M.pdf Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
auf Bestellung 708 Stücke:
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5+4.1 EUR
10+2.63 EUR
100+1.8 EUR
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GT100N12M GOFORD Semiconductor GT100N12M.pdf N-CH,120V,70A,RD(max) Less Than 10mOhm at 10V, VTH2.5V to 3.5V, TO-263
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.88 EUR
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GT100N12T GOFORD Semiconductor GT100N12T.pdf N-Channel Enhancement Mode Power MOSFET
auf Bestellung 4000 Stücke:
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174+0.84 EUR
Mindestbestellmenge: 174
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GT100N12T GT100N12T Goford Semiconductor GT100N12T.pdf Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.2 EUR
50+1.7 EUR
100+1.54 EUR
Mindestbestellmenge: 6
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GT100P06K GT100P06K Goford Semiconductor Description: MOSFET P-CH 60V 60A 104W 8M(MAX
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.13 EUR
7+2.72 EUR
8+2.27 EUR
9+2.13 EUR
10+1.99 EUR
25+1.69 EUR
50+1.5 EUR
100+1.35 EUR
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GT100P06K GT100P06K Goford Semiconductor Description: MOSFET P-CH 60V 60A 104W 8M(MAX
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
Produkt ist nicht verfügbar
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GT105N10F GT105N10F Goford Semiconductor GT105N10F.pdf Description: MOSFET N-CH 100V 33A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V
Power Dissipation (Max): 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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GT105N10F GT105N10F Goford Semiconductor GT105N10F.pdf Description: N100V,RD(MAX)<10.5M@10V,RD(MAX)<
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1587 pF @ 50 V
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GT105N10F GOFORD Semiconductor GT105N10F.pdf N-CH,100V,33A,RD(max) Less Than 10.5mOhm at 10V,RD(max) Less Than 15mOhm at 4.5V,VTH 1.0V to 2.5V, TO-220F
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
254+0.57 EUR
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GT105N10K GT105N10K Goford Semiconductor GT105N10K.pdf Description: MOSFET, N-CH, 100V,60A,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 50 V
auf Bestellung 83 Stücke:
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GT105N10K GT105N10K Goford Semiconductor GT105N10K.pdf Description: MOSFET N-CH 100V 60A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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GT105N10K GT105N10K Goford Semiconductor GT105N10K.pdf Description: MOSFET, N-CH, 100V,60A,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 50 V
auf Bestellung 2500 Stücke:
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GT105N10K GOFORD Semiconductor GT105N10K.pdf N-CH,100V,60A,RD(max) Less Than 10.5mOhm at 10V, VTH2.5V to 4.0V, TO-252
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GT105N10M GOFORD Semiconductor GT105N10M
auf Bestellung 1600 Stücke:
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GT105N10M GT105N10M Goford Semiconductor Description: MOSFET N-CH 100V 60A 83W TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1675 pF @ 50 V
auf Bestellung 800 Stücke:
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GT105N10M GT105N10M Goford Semiconductor Description: MOSFET N-CH 100V 60A 83W TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1675 pF @ 50 V
Produkt ist nicht verfügbar
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GT105N10T GT105N10T Goford Semiconductor GT105N10T.pdf Description: N100V,RD(MAX)<10.5M@10V,RD(MAX)<
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 50 V
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
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GT105N10T GOFORD Semiconductor GT105N10T.pdf N-CH,100V,60A,RD(max) Less Than 10.5mOhm at 10V, VTH2.5V to 4.0V, TO-252
auf Bestellung 3000 Stücke:
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GT105N10T GT105N10T Goford Semiconductor GT105N10T.pdf Description: MOSFET N-CH 100V 55A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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GT10N10 GOFORD Semiconductor GT10N10.pdf N-CH 100V 7A 140mOhm/MAX at 10V, 175mOhm/MAX at 4.5V ,TO-252
auf Bestellung 100000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.19 EUR
15000+0.17 EUR
30000+0.15 EUR
Mindestbestellmenge: 2500
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GT10N10 GT10N10 Goford Semiconductor GT10N10.pdf Description: N100V, 7A,RD<140M@10V,VTH1.5V~2.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 50 V
Produkt ist nicht verfügbar
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GT10N10 GT10N10 Goford Semiconductor GT10N10.pdf Description: N100V, 7A,RD<140M@10V,VTH1.5V~2.
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 50 V
auf Bestellung 4257 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
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100+0.5 EUR
500+0.38 EUR
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GT10N10 GT10N10 Goford Semiconductor GT10N10.pdf Description: MOSFET N-CH 100V 7A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 3.5A, 10V
Power Dissipation (Max): 17W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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GT110N06D3 GT110N06D3 Goford Semiconductor GT110N06D3.pdf Description: N60V, 35A,RD<11M@10V,VTH1.0V~2.4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1059 pF @ 30 V
Produkt ist nicht verfügbar
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GT110N06D3 GT110N06D3 Goford Semiconductor GT110N06D3.pdf Description: N60V, 35A,RD<11M@10V,VTH1.0V~2.4
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1059 pF @ 30 V
auf Bestellung 4999 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.76 EUR
17+1.1 EUR
100+0.72 EUR
500+0.55 EUR
1000+0.5 EUR
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GT110N06D3 GT110N06D3 Goford Semiconductor GT110N06D3.pdf Description: MOSFET N-CH 60V 35A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 20000 Stücke:
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5000+0.37 EUR
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Mindestbestellmenge: 5000
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GT110N06D3 GOFORD Semiconductor GT110N06D3.pdf N-CH,60V,35A,RD(max) Less Than 11mOhm at 10V,RD(max) Less Than 14mOhm at 4.5V,VTH 1.0V to 2.4V,DFN3x3-8L
auf Bestellung 20000 Stücke:
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GT110N06D5 GOFORD Semiconductor GT110N06D5.pdf N-CH,60V,45A,RD(max) Less Than 11mOhm at 10V,RD(max) Less Than 14mOhm at 4.5V,VTH 1.0V to 2.4V,DFN5x6-8L
auf Bestellung 1000 Stücke:
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GT110N06D5 GT110N06D5 Goford Semiconductor GT110N06D5.pdf Description: N60V, 45A,RD<11M@10V,VTH1.0V~2.4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1202 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.47 EUR
Mindestbestellmenge: 5000
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GT110N06D5 GT110N06D5 Goford Semiconductor GT110N06D5.pdf Description: N60V, 45A,RD<11M@10V,VTH1.0V~2.4
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1202 pF @ 30 V
auf Bestellung 4976 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
14+1.32 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
2000+0.57 EUR
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GT110N06M GT110N06M Goford Semiconductor GT110N06M.pdf Description: MOSFET N-CH 60V 45A 52W TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
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GT110N06M GT110N06M Goford Semiconductor GT110N06M.pdf Description: MOSFET N-CH 60V 45A 52W TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
auf Bestellung 584 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
13+1.41 EUR
100+0.98 EUR
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GT110N06M GT110N06M Goford Semiconductor GT110N06M.pdf Description: MOSFET N-CH 60V 45A 52W 9m(max)@
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
auf Bestellung 6400 Stücke:
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800+0.55 EUR
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GT110N06S GOFORD Semiconductor GOFORD-GT110N06S.pdf N-CH 60V 14A 11mOhmMAX at 10V, 14mOhmMAX at 4.5V, SOP-8
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.31 EUR
16000+0.28 EUR
Mindestbestellmenge: 4000
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GT110N06S GT110N06S Goford Semiconductor GOFORD-GT110N06S.pdf Description: MOSFET N-CH 60V 14A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
FET Feature: Standard
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 50000 Stücke:
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4000+0.35 EUR
16000+0.32 EUR
32000+0.29 EUR
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GT130N10D3 GT130N10D3 Goford Semiconductor GT130N10D3.pdf Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
Produkt ist nicht verfügbar
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GT095N10D5 GT095N10D5.pdf
GT095N10D5
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<11M@10V,RD(MAX)<15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.67 EUR
Mindestbestellmenge: 5000
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GT095N10D5 GT095N10D5.pdf
GT095N10D5
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<11M@10V,RD(MAX)<15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 50 V
auf Bestellung 4841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
11+1.74 EUR
100+1.16 EUR
500+0.92 EUR
1000+0.84 EUR
2000+0.77 EUR
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GT095N10D5 GT095N10D5.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.41 EUR
Mindestbestellmenge: 5000
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GT095N10K GT095N10K.pdf
GT095N10K
Hersteller: Goford Semiconductor
Description: N100V, RD(MAX)<10.5M@10V,RD(MAX)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 50 V
Produkt ist nicht verfügbar
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GT095N10K GT095N10K.pdf
GT095N10K
Hersteller: Goford Semiconductor
Description: N100V, RD(MAX)<10.5M@10V,RD(MAX)
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 50 V
auf Bestellung 3922 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
11+1.73 EUR
100+1.16 EUR
500+0.91 EUR
1000+0.83 EUR
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GT095N10S GOFORD-GT095N10S.pdf
GT095N10S
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 11A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.49 EUR
16000+0.45 EUR
Mindestbestellmenge: 4000
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GT1003A GT1003A.pdf
GT1003A
Hersteller: Goford Semiconductor
Description: N100V, 3A,RD<140M@10V,VTH1.0V~3.
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V
auf Bestellung 1947 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
40+0.45 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.19 EUR
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GT1003A GT1003A.pdf
GT1003A
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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GT1003A GT1003A.pdf
Hersteller: GOFORD Semiconductor
High Density Cell Design MOSFET
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.084 EUR
15000+0.075 EUR
30000+0.064 EUR
Mindestbestellmenge: 3000
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GT1003A GT1003A.pdf
GT1003A
Hersteller: Goford Semiconductor
Description: N100V, 3A,RD<140M@10V,VTH1.0V~3.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V
Produkt ist nicht verfügbar
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GT1003D GT1003D.pdf
GT1003D
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<130M@10V,RD(MAX)<1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V
auf Bestellung 4370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
45+0.39 EUR
100+0.25 EUR
500+0.18 EUR
1000+0.16 EUR
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GT1003D GT1003D.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.074 EUR
15000+0.065 EUR
30000+0.058 EUR
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GT1003D GT1003D.pdf
GT1003D
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 3A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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GT1003D GT1003D.pdf
GT1003D
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<130M@10V,RD(MAX)<1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V
Produkt ist nicht verfügbar
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GT100N04D3 GT100N04D3.pdf
GT100N04D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 13A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.18 EUR
Mindestbestellmenge: 5000
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GT100N04D3 GT100N04D3.pdf
GT100N04D3
Hersteller: Goford Semiconductor
Description: N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.22 EUR
Mindestbestellmenge: 5000
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GT100N04D3 GT100N04D3.pdf
GT100N04D3
Hersteller: Goford Semiconductor
Description: N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V
auf Bestellung 1760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.02 EUR
28+0.63 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
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GT100N04D3 GT100N04D3.pdf
Hersteller: GOFORD Semiconductor
N-CH,40V,13A,RD(max) Less Than 10mOhm at 10V,RD(max) Less Than 16mOhm at 4.5V,VTH 1.0V to 2.5V,DFN3x3-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.17 EUR
Mindestbestellmenge: 5000
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GT100N12D5 products-detail.php?ProId=588
GT100N12D5
Hersteller: Goford Semiconductor
Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.29 EUR
Mindestbestellmenge: 5000
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GT100N12D5 products-detail.php?ProId=588
GT100N12D5
Hersteller: Goford Semiconductor
Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
auf Bestellung 9965 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+2.5 EUR
100+2.01 EUR
500+1.65 EUR
1000+1.37 EUR
2000+1.29 EUR
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GT100N12K GT100N12K.pdf
Hersteller: GOFORD Semiconductor
GT100N12K
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.71 EUR
Mindestbestellmenge: 2500
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GT100N12K GT100N12K.pdf
GT100N12K
Hersteller: Goford Semiconductor
Description: N120V,65A,RD<12M@10V,VTH2.5V~3.5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 35A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2911 pF @ 60 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.96 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
GT100N12K GT100N12K.pdf
GT100N12K
Hersteller: Goford Semiconductor
Description: N120V,65A,RD<12M@10V,VTH2.5V~3.5
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 35A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2911 pF @ 60 V
Produkt ist nicht verfügbar
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GT100N12M GT100N12M.pdf
GT100N12M
Hersteller: Goford Semiconductor
Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT100N12M GT100N12M.pdf
GT100N12M
Hersteller: Goford Semiconductor
Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
auf Bestellung 708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.1 EUR
10+2.63 EUR
100+1.8 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
GT100N12M GT100N12M.pdf
Hersteller: GOFORD Semiconductor
N-CH,120V,70A,RD(max) Less Than 10mOhm at 10V, VTH2.5V to 3.5V, TO-263
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.88 EUR
Mindestbestellmenge: 800
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GT100N12T GT100N12T.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
174+0.84 EUR
Mindestbestellmenge: 174
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GT100N12T GT100N12T.pdf
GT100N12T
Hersteller: Goford Semiconductor
Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.2 EUR
50+1.7 EUR
100+1.54 EUR
Mindestbestellmenge: 6
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GT100P06K
GT100P06K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 60A 104W 8M(MAX
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
7+2.72 EUR
8+2.27 EUR
9+2.13 EUR
10+1.99 EUR
25+1.69 EUR
50+1.5 EUR
100+1.35 EUR
Mindestbestellmenge: 6
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GT100P06K
GT100P06K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 60A 104W 8M(MAX
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
Produkt ist nicht verfügbar
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GT105N10F GT105N10F.pdf
GT105N10F
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 33A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V
Power Dissipation (Max): 20.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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GT105N10F GT105N10F.pdf
GT105N10F
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<10.5M@10V,RD(MAX)<
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1587 pF @ 50 V
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
11+1.66 EUR
Mindestbestellmenge: 8
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GT105N10F GT105N10F.pdf
Hersteller: GOFORD Semiconductor
N-CH,100V,33A,RD(max) Less Than 10.5mOhm at 10V,RD(max) Less Than 15mOhm at 4.5V,VTH 1.0V to 2.5V, TO-220F
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
254+0.57 EUR
Mindestbestellmenge: 254
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GT105N10K GT105N10K.pdf
GT105N10K
Hersteller: Goford Semiconductor
Description: MOSFET, N-CH, 100V,60A,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 50 V
auf Bestellung 83 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
11+1.69 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
GT105N10K GT105N10K.pdf
GT105N10K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 60A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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GT105N10K GT105N10K.pdf
GT105N10K
Hersteller: Goford Semiconductor
Description: MOSFET, N-CH, 100V,60A,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.67 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
GT105N10K GT105N10K.pdf
Hersteller: GOFORD Semiconductor
N-CH,100V,60A,RD(max) Less Than 10.5mOhm at 10V, VTH2.5V to 4.0V, TO-252
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.47 EUR
15000+0.42 EUR
Mindestbestellmenge: 2500
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GT105N10M
Hersteller: GOFORD Semiconductor
GT105N10M
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.55 EUR
Mindestbestellmenge: 800
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GT105N10M
GT105N10M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 60A 83W TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1675 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.02 EUR
Mindestbestellmenge: 800
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GT105N10M
GT105N10M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 60A 83W TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1675 pF @ 50 V
Produkt ist nicht verfügbar
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GT105N10T GT105N10T.pdf
GT105N10T
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<10.5M@10V,RD(MAX)<
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 50 V
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
11+1.73 EUR
100+1.22 EUR
Mindestbestellmenge: 7
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GT105N10T GT105N10T.pdf
Hersteller: GOFORD Semiconductor
N-CH,100V,60A,RD(max) Less Than 10.5mOhm at 10V, VTH2.5V to 4.0V, TO-252
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
246+0.59 EUR
Mindestbestellmenge: 246
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GT105N10T GT105N10T.pdf
GT105N10T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 55A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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GT10N10 GT10N10.pdf
Hersteller: GOFORD Semiconductor
N-CH 100V 7A 140mOhm/MAX at 10V, 175mOhm/MAX at 4.5V ,TO-252
auf Bestellung 100000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.19 EUR
15000+0.17 EUR
30000+0.15 EUR
Mindestbestellmenge: 2500
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GT10N10 GT10N10.pdf
GT10N10
Hersteller: Goford Semiconductor
Description: N100V, 7A,RD<140M@10V,VTH1.5V~2.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 50 V
Produkt ist nicht verfügbar
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GT10N10 GT10N10.pdf
GT10N10
Hersteller: Goford Semiconductor
Description: N100V, 7A,RD<140M@10V,VTH1.5V~2.
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 50 V
auf Bestellung 4257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.78 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 14
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GT10N10 GT10N10.pdf
GT10N10
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 7A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 3.5A, 10V
Power Dissipation (Max): 17W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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GT110N06D3 GT110N06D3.pdf
GT110N06D3
Hersteller: Goford Semiconductor
Description: N60V, 35A,RD<11M@10V,VTH1.0V~2.4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1059 pF @ 30 V
Produkt ist nicht verfügbar
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GT110N06D3 GT110N06D3.pdf
GT110N06D3
Hersteller: Goford Semiconductor
Description: N60V, 35A,RD<11M@10V,VTH1.0V~2.4
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1059 pF @ 30 V
auf Bestellung 4999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
17+1.1 EUR
100+0.72 EUR
500+0.55 EUR
1000+0.5 EUR
2000+0.46 EUR
Mindestbestellmenge: 10
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GT110N06D3 GT110N06D3.pdf
GT110N06D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 35A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.37 EUR
15000+0.35 EUR
Mindestbestellmenge: 5000
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GT110N06D3 GT110N06D3.pdf
Hersteller: GOFORD Semiconductor
N-CH,60V,35A,RD(max) Less Than 11mOhm at 10V,RD(max) Less Than 14mOhm at 4.5V,VTH 1.0V to 2.4V,DFN3x3-8L
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.32 EUR
15000+0.29 EUR
Mindestbestellmenge: 5000
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GT110N06D5 GT110N06D5.pdf
Hersteller: GOFORD Semiconductor
N-CH,60V,45A,RD(max) Less Than 11mOhm at 10V,RD(max) Less Than 14mOhm at 4.5V,VTH 1.0V to 2.4V,DFN5x6-8L
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
402+0.36 EUR
Mindestbestellmenge: 402
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GT110N06D5 GT110N06D5.pdf
GT110N06D5
Hersteller: Goford Semiconductor
Description: N60V, 45A,RD<11M@10V,VTH1.0V~2.4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1202 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.47 EUR
Mindestbestellmenge: 5000
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GT110N06D5 GT110N06D5.pdf
GT110N06D5
Hersteller: Goford Semiconductor
Description: N60V, 45A,RD<11M@10V,VTH1.0V~2.4
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1202 pF @ 30 V
auf Bestellung 4976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
14+1.32 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
2000+0.57 EUR
Mindestbestellmenge: 9
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GT110N06M GT110N06M.pdf
GT110N06M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 45A 52W TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
Produkt ist nicht verfügbar
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GT110N06M GT110N06M.pdf
GT110N06M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 45A 52W TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
auf Bestellung 584 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
13+1.41 EUR
100+0.98 EUR
Mindestbestellmenge: 9
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GT110N06M GT110N06M.pdf
GT110N06M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 45A 52W 9m(max)@
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+0.55 EUR
Mindestbestellmenge: 800
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GT110N06S GOFORD-GT110N06S.pdf
Hersteller: GOFORD Semiconductor
N-CH 60V 14A 11mOhmMAX at 10V, 14mOhmMAX at 4.5V, SOP-8
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.31 EUR
16000+0.28 EUR
Mindestbestellmenge: 4000
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GT110N06S GOFORD-GT110N06S.pdf
GT110N06S
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 14A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
FET Feature: Standard
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.35 EUR
16000+0.32 EUR
32000+0.29 EUR
Mindestbestellmenge: 4000
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GT130N10D3 GT130N10D3.pdf
GT130N10D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 52A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 50 V
Produkt ist nicht verfügbar
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