Produkte > GOFORD SEMICONDUCTOR > Alle Produkte des Herstellers GOFORD SEMICONDUCTOR (1347) > Seite 16 nach 23

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 4 6 8 10 11 12 13 14 15 16 17 18 19 20 21 22 23  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
GC190N65QF GC190N65QF Goford Semiconductor GC190N65QF.pdf Description: MOSFET 650V 19A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.2 EUR
30+3.96 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65F GC20N65F Goford Semiconductor GC20N65F.pdf Description: N650V,RD(MAX)<170M@10V,VTH2.5V~4
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1603 pF @ 100 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.71 EUR
10+5.75 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65F GOFORD SEMICONDUCTOR GC20N65F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 40W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Power dissipation: 40W
Case: TO220F
Mounting: THT
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Gate charge: 39nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65F GOFORD Semiconductor GC20N65F.pdf Small Package MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.63 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65FD GC20N65FD Goford Semiconductor GC20N65FD.pdf Description: MOSFET N-CH 650V 20A 40W TO-220
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+2.39 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65FD GC20N65FD Goford Semiconductor GC20N65FD.pdf Description: MOSFET N-CH 650V 20A 40W TO-220
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.38 EUR
10+5.52 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65FD GOFORD SEMICONDUCTOR GC20N65FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 40W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Power dissipation: 40W
Case: TO220F
Mounting: THT
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Gate charge: 39nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65FD GOFORD Semiconductor GC20N65FD.pdf N-CH,650V,20A,RD(max) Less Than 0.19Ohm at 10V,VTH 3.0V to 5.0V, TO-220F
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
100+2.08 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65M GC20N65M Goford Semiconductor GC20N65M.pdf Description: MOSFET N-CH 650V 20A 151W 180m(
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+2.06 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65M GC20N65M GOFORD SEMICONDUCTOR GC20N65M.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO263
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Power dissipation: 151W
Case: TO263
Mounting: SMD
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Gate charge: 28nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65M GC20N65M Goford Semiconductor GC20N65M.pdf Description: MOSFET N-CH 650V 20A 151W 180M(
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65M GC20N65M Goford Semiconductor GC20N65M.pdf Description: MOSFET N-CH 650V 20A 151W 180M(
auf Bestellung 788 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.41 EUR
10+4.86 EUR
50+3.76 EUR
100+3.4 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65Q GC20N65Q Goford Semiconductor GC20N65Q.pdf Description: MOSFET N-CH 650V 20A TO-247
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+3.02 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65Q GC20N65Q Goford Semiconductor GC20N65Q.pdf Description: N650V,RD(MAX)<170M@10V,VTH2.5V~4
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.95 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65Q GC20N65Q GOFORD SEMICONDUCTOR GC20N65Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO247
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Power dissipation: 151W
Case: TO247
Mounting: THT
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Gate charge: 39nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65QD GC20N65QD GOFORD SEMICONDUCTOR GC20N65QD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO247
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Power dissipation: 151W
Case: TO247
Mounting: THT
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Gate charge: 39nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65QD GC20N65QD Goford Semiconductor GC20N65QD.pdf Description: MOSFET N-CH 650V 20A TO-247
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.12 EUR
10+6.72 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65T GC20N65T GOFORD SEMICONDUCTOR GC20N65T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO220
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Power dissipation: 151W
Case: TO220
Mounting: THT
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Gate charge: 39nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65T GC20N65T Goford Semiconductor GC20N65T.pdf Description: MOSFET N-CH 650V 20A TO-220
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+2.31 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC210N80FE GOFORD SEMICONDUCTOR GC210N80FE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 800V; 17A; 51W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 50nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC210N80FE GC210N80FE Goford Semiconductor GC210N80FE.pdf Description: MOSFET N-CH 800V ESD 17A 51W TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 380 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.17 EUR
10+6.07 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC280N65F GOFORD SEMICONDUCTOR GC280N65F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 15A; 33W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 33W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC280N65F GC280N65F Goford Semiconductor GC280N65F.pdf Description: MOSFET N-CH 650V 15A TO-220F
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.5 EUR
10+4.24 EUR
50+3.26 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC300N65F GC300N65F Goford Semiconductor GC300N65F.pdf Description: MOSFET,N-CH,650V,13A,33W,TO-220F
Packaging: Tube
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.99 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC300N65F GOFORD SEMICONDUCTOR GC300N65F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 13A; 33W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 33W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 23nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC300N65K GC300N65K Goford Semiconductor GC300N65K.pdf Description: MOSFET,N-CH,650V,13A,132W,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC300N65K GC300N65K Goford Semiconductor GC300N65K.pdf Description: MOSFET,N-CH,650V,13A,132W,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 400 V
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.52 EUR
10+2.24 EUR
100+1.51 EUR
500+1.2 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60D5E GC380N60D5E Goford Semiconductor GC380N60D5E.pdf Description: MOSFET,N-CH,600V,11A,82W,8-DFN (
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 300 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
500+1.25 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60D5E GC380N60D5E Goford Semiconductor GC380N60D5E.pdf Description: MOSFET,N-CH,600V,11A,82W,8-DFN (
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60FE GOFORD SEMICONDUCTOR GC380N60FE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 11A; 31W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 31W
Case: TO220F
Mounting: THT
Gate charge: 17nC
Kind of channel: enhancement
Version: ESD
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60FE GC380N60FE Goford Semiconductor GC380N60FE.pdf Description: MOSFET,N-CH,600V,11A,31W,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 300 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.86 EUR
10+2.46 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60FE GC380N60FE Goford Semiconductor GC380N60FE.pdf Description: MOSFET,N-CH,600V,11A,31W,TO-220F
Packaging: Tube
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.82 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60KE GC380N60KE Goford Semiconductor GC380N60KE.pdf Description: MOSFET,N-CH,600V,9A,82W,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.5A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 300 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60KE GC380N60KE Goford Semiconductor GC380N60KE.pdf Description: MOSFET,N-CH,600V,9A,82W,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.5A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 300 V
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.52 EUR
10+2.23 EUR
50+1.68 EUR
100+1.5 EUR
500+1.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GS65R060Q4A GS65R060Q4A Goford Semiconductor Description: SiC MOSFET N-CH 650V 42A TO-247
Packaging: Tube
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.35 EUR
50+15.28 EUR
100+12.74 EUR
500+11.72 EUR
1000+10.19 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT007N04TL GT007N04TL Goford Semiconductor GOFORD-GT007N04TL.pdf Description: N40V,150A,RD<1.5M@10V,VTH1.0V~2.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7363 pF @ 20 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.83 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT007N04TL GOFORD SEMICONDUCTOR GOFORD-GT007N04TL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 345A; 159W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 345A
Power dissipation: 159W
Case: TOLL
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhancement
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT009N04D5 GT009N04D5 Goford Semiconductor GOFORD-GT009N04D5.pdf Description: N40V,100A,RD<1.3M@10V,VTH1.0V~2.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6864 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT010N10TL GT010N10TL Goford Semiconductor GT010N10TL.pdf Description: MOSFET N-CH 100V 370A 400W 1.35M
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13166 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT010N10TL GT010N10TL Goford Semiconductor GT010N10TL.pdf Description: MOSFET,N-CH,100V,370A,400W,TOLL-
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+3.21 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT010N10TL GOFORD SEMICONDUCTOR GT010N10TL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 370A; 400W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 370A
Power dissipation: 400W
Case: TOLL
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT010N10TL GT010N10TL Goford Semiconductor GT010N10TL.pdf Description: MOSFET N-CH 100V 370A 400W 1.35M
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13166 pF @ 50 V
auf Bestellung 1076 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.53 EUR
10+7.02 EUR
50+5.51 EUR
100+5.02 EUR
500+4.52 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT010N10TT GT010N10TT Goford Semiconductor GT010N10TT.pdf Description: MOSFET N-CH 100V 380A 412W TOLT
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
50+5.14 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT010N10TT GT010N10TT Goford Semiconductor GT010N10TT.pdf Description: MOSFET N-CH 100V 380A 412W TOLT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03D5E GT011N03D5E Goford Semiconductor GT011N03D5E.pdf Description: MOSFET N-CH ESD 30V 209A DFN5*6-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 10A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03D5E GT011N03D5E Goford Semiconductor GT011N03D5E.pdf Description: MOSFET N-CH ESD 30V 209A DFN5*6-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 10A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 15 V
auf Bestellung 4987 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.98 EUR
10+2.43 EUR
100+1.89 EUR
500+1.59 EUR
1000+1.31 EUR
2000+1.23 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03D5E GT011N03D5E Goford Semiconductor GOFORD--GT011N03D5E.pdf Description: MOSFET N-CH ESD 30V 209A DFN5*6-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 10A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6503 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.12 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03ME GT011N03ME Goford Semiconductor GT011N03ME.pdf Description: MOSFET N-CH ESD 30V A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 10A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
auf Bestellung 794 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.22 EUR
10+2.67 EUR
100+2.13 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03ME GT011N03ME Goford Semiconductor GT011N03ME.pdf Description: MOSFET N-CH ESD 30V A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 10A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03TE GT011N03TE Goford Semiconductor GOFORD--GT011N03TE.pdf Description: MOSFET N-CH ESD 30V 209A 89W TO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5988 pF @ 15 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.17 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03TLE GOFORD SEMICONDUCTOR GT011N03TLE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 30V; 250A; 300W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 250A
Power dissipation: 300W
Case: TOLL
Gate-source voltage: ±18V
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Version: ESD
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03TLE GT011N03TLE Goford Semiconductor GT011N03TLE.pdf Description: MOSFET N-CH 30V 250A 300W 1.2m(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.39 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03TLE GT011N03TLE Goford Semiconductor GT011N03TLE.pdf Description: MOSFET N-CH 30V 250A 300W 1.2M(
Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V
Supplier Device Package: TOLL-8L
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03TLE GT011N03TLE Goford Semiconductor GT011N03TLE.pdf Description: MOSFET N-CH 30V 250A 300W 1.2M(
Power Dissipation (Max): 300W (Tc)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TOLL-8L
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.45 EUR
10+3.52 EUR
100+2.43 EUR
500+1.95 EUR
1000+1.8 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT013N04D5 GT013N04D5 Goford Semiconductor GOFORD-GT013N04D5.pdf Description: N40V,195A,RD<1.7M@10V,VTH2.0V~4.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3927 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.86 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT013N04D5 GT013N04D5 Goford Semiconductor GT013N04D5.pdf Description: MOSFET N-CH 40V 195A 96W 1.7m(ma
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3927 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.81 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT013N04D5 GOFORD Semiconductor GOFORD-GT013N04D5.pdf GT013N04D5.pdf N-CH,40V,195A,RD(max) Less Than 1.7mOhm at 10V,VTH 2V to 4V, DFN5x6-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.76 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT013N04Q GT013N04Q Goford Semiconductor GT013N04Q.pdf Description: MOSFET N-CH 40V 195A 96W TO-247
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.37 EUR
10+3.46 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT013N04TI GOFORD Semiconductor GT013N04TI.pdf N-CH,40V,220A,RD(max) Less Than 2.5mOhm at 10V,VTH 2V to 5V, TO-220
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
191+0.9 EUR
Mindestbestellmenge: 191 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT013N04TI GT013N04TI Goford Semiconductor GT013N04TI.pdf Description: MOSFET N-CH 40V 220A TO-220
Input Capacitance (Ciss) (Max) @ Vds: 3986 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.81 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC190N65QF GC190N65QF.pdf
GC190N65QF
Hersteller: Goford Semiconductor
Description: MOSFET 650V 19A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.2 EUR
30+3.96 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65F GC20N65F.pdf
GC20N65F
Hersteller: Goford Semiconductor
Description: N650V,RD(MAX)<170M@10V,VTH2.5V~4
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1603 pF @ 100 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.71 EUR
10+5.75 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65F GC20N65F.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 40W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Power dissipation: 40W
Case: TO220F
Mounting: THT
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Gate charge: 39nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65F GC20N65F.pdf
Hersteller: GOFORD Semiconductor
Small Package MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+1.63 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65FD GC20N65FD.pdf
GC20N65FD
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 20A 40W TO-220
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+2.39 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65FD GC20N65FD.pdf
GC20N65FD
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 20A 40W TO-220
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.38 EUR
10+5.52 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65FD GC20N65FD.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 40W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Power dissipation: 40W
Case: TO220F
Mounting: THT
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Gate charge: 39nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65FD GC20N65FD.pdf
Hersteller: GOFORD Semiconductor
N-CH,650V,20A,RD(max) Less Than 0.19Ohm at 10V,VTH 3.0V to 5.0V, TO-220F
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
100+2.08 EUR
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65M GC20N65M.pdf
GC20N65M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 20A 151W 180m(
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.06 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65M GC20N65M.pdf
GC20N65M
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO263
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Power dissipation: 151W
Case: TO263
Mounting: SMD
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Gate charge: 28nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65M GC20N65M.pdf
GC20N65M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 20A 151W 180M(
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65M GC20N65M.pdf
GC20N65M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 20A 151W 180M(
auf Bestellung 788 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.41 EUR
10+4.86 EUR
50+3.76 EUR
100+3.4 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65Q GC20N65Q.pdf
GC20N65Q
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 20A TO-247
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+3.02 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65Q GC20N65Q.pdf
GC20N65Q
Hersteller: Goford Semiconductor
Description: N650V,RD(MAX)<170M@10V,VTH2.5V~4
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.95 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65Q GC20N65Q.pdf
GC20N65Q
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO247
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Power dissipation: 151W
Case: TO247
Mounting: THT
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Gate charge: 39nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65QD GC20N65QD.pdf
GC20N65QD
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO247
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Power dissipation: 151W
Case: TO247
Mounting: THT
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Gate charge: 39nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65QD GC20N65QD.pdf
GC20N65QD
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 20A TO-247
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.12 EUR
10+6.72 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65T GC20N65T.pdf
GC20N65T
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 151W; TO220
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Power dissipation: 151W
Case: TO220
Mounting: THT
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Gate charge: 39nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC20N65T GC20N65T.pdf
GC20N65T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 20A TO-220
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+2.31 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC210N80FE GC210N80FE.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 800V; 17A; 51W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 50nC
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC210N80FE GC210N80FE.pdf
GC210N80FE
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 800V ESD 17A 51W TO-
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 380 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.17 EUR
10+6.07 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC280N65F GC280N65F.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 15A; 33W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 33W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 27nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC280N65F GC280N65F.pdf
GC280N65F
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 15A TO-220F
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.5 EUR
10+4.24 EUR
50+3.26 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC300N65F GC300N65F.pdf
GC300N65F
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,650V,13A,33W,TO-220F
Packaging: Tube
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.99 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC300N65F GC300N65F.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 13A; 33W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 33W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 23nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC300N65K GC300N65K.pdf
GC300N65K
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,650V,13A,132W,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC300N65K GC300N65K.pdf
GC300N65K
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,650V,13A,132W,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 132W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 400 V
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.52 EUR
10+2.24 EUR
100+1.51 EUR
500+1.2 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60D5E GC380N60D5E.pdf
GC380N60D5E
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,600V,11A,82W,8-DFN (
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 300 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
500+1.25 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60D5E GC380N60D5E.pdf
GC380N60D5E
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,600V,11A,82W,8-DFN (
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60FE GC380N60FE.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 11A; 31W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 31W
Case: TO220F
Mounting: THT
Gate charge: 17nC
Kind of channel: enhancement
Version: ESD
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60FE GC380N60FE.pdf
GC380N60FE
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,600V,11A,31W,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 300 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.86 EUR
10+2.46 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60FE GC380N60FE.pdf
GC380N60FE
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,600V,11A,31W,TO-220F
Packaging: Tube
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.82 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60KE GC380N60KE.pdf
GC380N60KE
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,600V,9A,82W,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.5A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GC380N60KE GC380N60KE.pdf
GC380N60KE
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,600V,9A,82W,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 4.5A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 300 V
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.52 EUR
10+2.23 EUR
50+1.68 EUR
100+1.5 EUR
500+1.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GS65R060Q4A
GS65R060Q4A
Hersteller: Goford Semiconductor
Description: SiC MOSFET N-CH 650V 42A TO-247
Packaging: Tube
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.35 EUR
50+15.28 EUR
100+12.74 EUR
500+11.72 EUR
1000+10.19 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT007N04TL GOFORD-GT007N04TL.pdf
GT007N04TL
Hersteller: Goford Semiconductor
Description: N40V,150A,RD<1.5M@10V,VTH1.0V~2.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7363 pF @ 20 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.83 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT007N04TL GOFORD-GT007N04TL.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 345A; 159W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 345A
Power dissipation: 159W
Case: TOLL
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 125nC
Kind of channel: enhancement
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT009N04D5 GOFORD-GT009N04D5.pdf
GT009N04D5
Hersteller: Goford Semiconductor
Description: N40V,100A,RD<1.3M@10V,VTH1.0V~2.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6864 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT010N10TL GT010N10TL.pdf
GT010N10TL
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 370A 400W 1.35M
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13166 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT010N10TL GT010N10TL.pdf
GT010N10TL
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,100V,370A,400W,TOLL-
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+3.21 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT010N10TL GT010N10TL.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 370A; 400W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 370A
Power dissipation: 400W
Case: TOLL
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 0.22µC
Kind of channel: enhancement
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT010N10TL GT010N10TL.pdf
GT010N10TL
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 370A 400W 1.35M
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13166 pF @ 50 V
auf Bestellung 1076 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.53 EUR
10+7.02 EUR
50+5.51 EUR
100+5.02 EUR
500+4.52 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT010N10TT GT010N10TT.pdf
GT010N10TT
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 380A 412W TOLT
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+5.14 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT010N10TT GT010N10TT.pdf
GT010N10TT
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 380A 412W TOLT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03D5E GT011N03D5E.pdf
GT011N03D5E
Hersteller: Goford Semiconductor
Description: MOSFET N-CH ESD 30V 209A DFN5*6-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 10A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03D5E GT011N03D5E.pdf
GT011N03D5E
Hersteller: Goford Semiconductor
Description: MOSFET N-CH ESD 30V 209A DFN5*6-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 10A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 15 V
auf Bestellung 4987 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.98 EUR
10+2.43 EUR
100+1.89 EUR
500+1.59 EUR
1000+1.31 EUR
2000+1.23 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03D5E GOFORD--GT011N03D5E.pdf
GT011N03D5E
Hersteller: Goford Semiconductor
Description: MOSFET N-CH ESD 30V 209A DFN5*6-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 10A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6503 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.12 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03ME GT011N03ME.pdf
GT011N03ME
Hersteller: Goford Semiconductor
Description: MOSFET N-CH ESD 30V A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 10A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
auf Bestellung 794 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.22 EUR
10+2.67 EUR
100+2.13 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03ME GT011N03ME.pdf
GT011N03ME
Hersteller: Goford Semiconductor
Description: MOSFET N-CH ESD 30V A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 10A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03TE GOFORD--GT011N03TE.pdf
GT011N03TE
Hersteller: Goford Semiconductor
Description: MOSFET N-CH ESD 30V 209A 89W TO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 209A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5988 pF @ 15 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+1.17 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03TLE GT011N03TLE.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 30V; 250A; 300W; TOLL; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 250A
Power dissipation: 300W
Case: TOLL
Gate-source voltage: ±18V
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Version: ESD
Technology: SGT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03TLE GT011N03TLE.pdf
GT011N03TLE
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 250A 300W 1.2m(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.39 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03TLE GT011N03TLE.pdf
GT011N03TLE
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 250A 300W 1.2M(
Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V
Supplier Device Package: TOLL-8L
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT011N03TLE GT011N03TLE.pdf
GT011N03TLE
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 250A 300W 1.2M(
Power Dissipation (Max): 300W (Tc)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TOLL-8L
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.45 EUR
10+3.52 EUR
100+2.43 EUR
500+1.95 EUR
1000+1.8 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT013N04D5 GOFORD-GT013N04D5.pdf
GT013N04D5
Hersteller: Goford Semiconductor
Description: N40V,195A,RD<1.7M@10V,VTH2.0V~4.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3927 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.86 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT013N04D5 GT013N04D5.pdf
GT013N04D5
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 195A 96W 1.7m(ma
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3927 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.81 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT013N04D5 GOFORD-GT013N04D5.pdf GT013N04D5.pdf
Hersteller: GOFORD Semiconductor
N-CH,40V,195A,RD(max) Less Than 1.7mOhm at 10V,VTH 2V to 4V, DFN5x6-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5000+0.76 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT013N04Q GT013N04Q.pdf
GT013N04Q
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 195A 96W TO-247
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3850 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.37 EUR
10+3.46 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT013N04TI GT013N04TI.pdf
Hersteller: GOFORD Semiconductor
N-CH,40V,220A,RD(max) Less Than 2.5mOhm at 10V,VTH 2V to 5V, TO-220
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
191+0.9 EUR
Mindestbestellmenge: 191 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
GT013N04TI GT013N04TI.pdf
GT013N04TI
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 220A TO-220
Input Capacitance (Ciss) (Max) @ Vds: 3986 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.81 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 4 6 8 10 11 12 13 14 15 16 17 18 19 20 21 22 23  [ Nächste Seite >> ]