Produkte > GOFORD SEMICONDUCTOR > Alle Produkte des Herstellers GOFORD SEMICONDUCTOR (1365) > Seite 8 nach 23

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
G180N06S2 G180N06S2 Goford Semiconductor G180N06S2.pdf Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G180N06S2 G180N06S2 Goford Semiconductor G180N06S2.pdf Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3988 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.64 EUR
13+1.65 EUR
50+1.24 EUR
100+1.09 EUR
500+0.86 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G180N06S2 G180N06S2 Goford Semiconductor G180N06S2.pdf Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.49 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G180N06S2 GOFORD Semiconductor G180N06S2.pdf Dual N-CH,60V,8A,RD(max) Less Than 20mOhm at 10V,RD(max) Less Than 22mOhm at 4.5V,VTH 1.2V to 2.4V,SOP-8
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.5 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G180N06S2 G180N06S2 GOFORD SEMICONDUCTOR G180N06S2.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 60V; 8A; 2W; SOP8
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G18N20K G18N20K Goford Semiconductor G18N20K.pdf Description: MOSFET,N-CH,200V,18A,110W,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18N20K G18N20K Goford Semiconductor G18N20K.pdf Description: MOSFET,N-CH,200V,18A,110W,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 100 V
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.4 EUR
14+1.51 EUR
50+1.12 EUR
100+0.99 EUR
500+0.77 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18N20T GOFORD Semiconductor G18N20T.pdf G18N20T
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.54 EUR
Mindestbestellmenge: 334 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18N20T G18N20T GOFORD SEMICONDUCTOR G18N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Planar; unipolar; 200V; 18A; 110W; TO220
Type of transistor: N-MOSFET
Technology: Planar
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 110W
Case: TO220
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 31nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G18N20T G18N20T Goford Semiconductor G18N20T.pdf Description: MOSFET N-CH 200V 18A 110W 190m(m
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.56 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18N50T G18N50T Goford Semiconductor G18N50T.pdf Description: MOSFET N-CH 500V 18A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 9A, 10V
Power Dissipation (Max): 189.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 250 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.41 EUR
10+4.16 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18NP06Y G18NP06Y Goford Semiconductor G18NP06Y.pdf Description: MOSFET N/P-CH 60V 18A TO252-4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18NP06Y Goford Semiconductor G18NP06Y.pdf Description: MOSFET N/P-CH 60V 18A TO252-4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1446pF @ 30V, 2696pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.49 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18NP06Y G18NP06Y Goford Semiconductor G18NP06Y.pdf Description: MOSFET N/P-CH 60V 18A TO252-4
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.01 EUR
16+1.34 EUR
100+0.93 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18NP06Y GOFORD Semiconductor G18NP06Y.pdf N-P-CH,60V/-60V,18A/-18A,RD(max) Less Than 35mOhm at 10V/45mOhm at -10V,VTH 1.0V to 2.5V/-1.5V-3.5V, SOP-8
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.46 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18NP06Y GOFORD SEMICONDUCTOR G18NP06Y.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 60/-60V; 18/-18A; 45/50W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 18/-18A
Power dissipation: 45/50W
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 22/25nC
Kind of channel: enhancement
Case: TO252-4
Technology: Trench
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G18P03D3 GOFORD Semiconductor G18P03D3.pdf P-CH,-30V,-28A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 15mOhm at -4.5V,VTH -1.0V to -2.5V,DFN3x3-8L
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.35 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18P03D3 G18P03D3 Goford Semiconductor G18P03D3.pdf Description: P30V,RD(MAX)<10M@-10V,RD(MAX)<15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G18P03D3 G18P03D3 Goford Semiconductor G18P03D3.pdf Description: P30V,RD(MAX)<10M@-10V,RD(MAX)<15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G18P03S GOFORD Semiconductor G18P03S.pdf P-CH,-30V,-15A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 15mOhm at -4.5V,VTH -1.1V to -2.5V,SOP-8
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.39 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18P03S G18P03S Goford Semiconductor G18P03S.pdf Description: MOSFET P-CH 30V 15A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.37 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18P03S GOFORD Semiconductor G18P03S.pdf P-CH,-30V,-15A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 15mOhm at -4.5V,VTH -1.1V to -2.5V,SOP-8
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.37 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06HH GOFORD Semiconductor GOFORD-G1K1P06HH.pdf P-60V,-4.5A,RD(max) Less Than 110mOhm at -10V,VTH -2V to -4V, SOT-223
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.15 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06HH G1K1P06HH Goford Semiconductor GOFORD-G1K1P06HH.pdf Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06HH G1K1P06HH Goford Semiconductor GOFORD-G1K1P06HH.pdf Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V
auf Bestellung 4550 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.67 EUR
40+0.52 EUR
100+0.32 EUR
500+0.3 EUR
1000+0.2 EUR
Mindestbestellmenge: 32 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LH GOFORD Semiconductor G1K1P06LH.pdf G1K1P06LH
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.09 EUR
15000+0.082 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LH G1K1P06LH Goford Semiconductor G1K1P06LH.pdf Description: MOSFET P-CH 60V 4.5A SOT-23-3L
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LH G1K1P06LH Goford Semiconductor G1K1P06LH.pdf Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ -3A,- 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LH G1K1P06LH Goford Semiconductor G1K1P06LH.pdf Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ -3A,- 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
auf Bestellung 721 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
41+0.52 EUR
56+0.37 EUR
100+0.32 EUR
500+0.25 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LL G1K1P06LL Goford Semiconductor G1K1P06LL.pdf Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH-
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LL GOFORD Semiconductor G1K1P06LL.pdf P-60V,-3A,RD(max) Less Than 110mOhm at -10V,RD(max) Less Than 130mOhm at -4.5V,VTH -1.0V to -2.5V, SOT-23-6L
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LL G1K1P06LL Goford Semiconductor G1K1P06LL.pdf Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH-
auf Bestellung 1457 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.94 EUR
37+0.58 EUR
51+0.42 EUR
100+0.37 EUR
500+0.27 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06SH G1K1P06SH Goford Semiconductor G1K1P06SH.pdf Description: MOSFET,P-CH,-60V,-4A,1.2W,SOP-8
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.12 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K2C10S2 G1K2C10S2 Goford Semiconductor GOFORD-G1K2C10S2.pdf Description: MOSFET 100V 3A/3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.42 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K2C10S2 G1K2C10S2 Goford Semiconductor GOFORD-G1K2C10S2.pdf Description: MOSFET 100V 3A/3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.48 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K2C10S2 G1K2C10S2 Goford Semiconductor GOFORD-G1K2C10S2.pdf Description: MOSFET 100V 3A/3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G1K3N10G G1K3N10G Goford Semiconductor GOFORD-G1K3N10G.pdf Description: N100V, 5A,RD<130M@10V,VTH1V~2V,
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V
auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.03 EUR
10+2.51 EUR
100+2 EUR
500+1.69 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K3N10G G1K3N10G GOFORD SEMICONDUCTOR GOFORD-G1K3N10G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 5A; 1.6W; SOT89
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 1.6W
Case: SOT89
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G1K3N10G G1K3N10G Goford Semiconductor GOFORD-G1K3N10G.pdf Description: N100V, 5A,RD<130M@10V,VTH1V~2V,
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K3N10LL G1K3N10LL Goford Semiconductor G1K3N10LL.pdf Description: MOSFET N-CH 100V 3.4A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K3N10LL G1K3N10LL Goford Semiconductor G1K3N10LL.pdf Description: MOSFET N-CH 100V 3.4A SOT-23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V
auf Bestellung 1325 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.92 EUR
38+0.56 EUR
52+0.4 EUR
100+0.36 EUR
500+0.26 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K8P06S2 G1K8P06S2 Goford Semiconductor GOFORD-G1K8P06S2.pdf Description: MOSFET 2P-CH 60V 3.2A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K8P06S2 G1K8P06S2 Goford Semiconductor GOFORD-G1K8P06S2.pdf Description: MOSFET 2P-CH 60V 3.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 3958 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.9 EUR
30+0.7 EUR
100+0.42 EUR
500+0.39 EUR
1000+0.26 EUR
2000+0.25 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1NP02LLE GOFORD SEMICONDUCTOR G1NP02LLE.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 1.3/-1.1A; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.3/-1.1A
Power dissipation: 1.25/1.25W
Gate-source voltage: ±10V
Mounting: SMD
Gate charge: 1/1.22nC
Kind of channel: enhancement
Case: SOT23-6
Technology: Trench
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G1NP02LLE G1NP02LLE Goford Semiconductor G1NP02LLE.pdf Description: MOSFET 20V 1.3A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1NP02LLE G1NP02LLE Goford Semiconductor G1NP02LLE.pdf Description: MOSFET 20V 1.3A SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.74 EUR
47+0.45 EUR
65+0.32 EUR
100+0.29 EUR
500+0.21 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2002A G2002A GOFORD Semiconductor goford-g2002a.pdf N-CH,200V,2A,RD(max) Less Than 540mOhm at 10V,RD(max) Less Than 560mOhm at 4.5V,VTH 1.0V to 3.0V, SOT-23-6L
auf Bestellung 2635 Stücke:
Lieferzeit 14-21 Tag (e)
407+0.44 EUR
543+0.32 EUR
1000+0.27 EUR
Mindestbestellmenge: 407 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2002A G2002A Goford Semiconductor G2002A.pdf Description: MOSFET N-CH 200V 2A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2002A G2002A GOFORD Semiconductor goford-g2002a.pdf N-CH,200V,2A,RD(max) Less Than 540mOhm at 10V,RD(max) Less Than 560mOhm at 4.5V,VTH 1.0V to 3.0V, SOT-23-6L
auf Bestellung 2635 Stücke:
Lieferzeit 14-21 Tag (e)
404+0.44 EUR
539+0.33 EUR
1000+0.29 EUR
Mindestbestellmenge: 404 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2003A G2003A Goford Semiconductor G2003A.pdf Description: N190V, 3A,RD<540M@10V,VTH1.0V~3.
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.07 EUR
32+0.67 EUR
50+0.49 EUR
100+0.43 EUR
500+0.32 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2003A G2003A GOFORD SEMICONDUCTOR G2003A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 190V; 3A; 1.8W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 1.8W
Gate charge: 12nC
Polarisation: unipolar
Technology: Trench
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 190V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G2003A GOFORD Semiconductor G2003A.pdf N-CH,190V,3A,RD(max) Less Than 540mOhm at 10V,RD(max) Less Than 560mOhm at 4.5V,VTH 1.0V to 3.0V, SOT-23-3L
auf Bestellung 120000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.14 EUR
15000+0.13 EUR
30000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2003A G2003A Goford Semiconductor G2003A.pdf Description: N190V, 3A,RD<540M@10V,VTH1.0V~3.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2009G GOFORD Semiconductor N-CH,200V,9A,RD(max) Less Than 300mOhm at 10V,VTH 1.0V to 2.5V, TO-252
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.37 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G200N03S2 G200N03S2 Goford Semiconductor G200N03S2.pdf Description: MOSFET,N+N-CH,30V,7A,2W,SOP-8 DU
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G200N03S2 G200N03S2 Goford Semiconductor G200N03S2.pdf Description: MOSFET,N+N-CH,30V,7A,2W,SOP-8 DU
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.11 EUR
31+0.69 EUR
50+0.5 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G200N03S2 GOFORD Semiconductor G200N03S2.pdf G200N03S2
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.17 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G200N06TH G200N06TH Goford Semiconductor G200N06TH.pdf Description: MOSFET,N-CH,60V,55A,60W,TO-220
Packaging: Tube
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.39 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G200N06TH G200N06TH Goford Semiconductor G200N06TH.pdf Description: MOSFET,N-CH,60V,55A,60W,TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 30 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.14 EUR
16+1.33 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G200N06TH GOFORD Semiconductor G200N06TH.pdf G200N06TH
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.42 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G180N06S2 G180N06S2.pdf
G180N06S2
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G180N06S2 G180N06S2.pdf
G180N06S2
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3988 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.64 EUR
13+1.65 EUR
50+1.24 EUR
100+1.09 EUR
500+0.86 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G180N06S2 G180N06S2.pdf
G180N06S2
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 8A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2330pF @ 30V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.49 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G180N06S2 G180N06S2.pdf
Hersteller: GOFORD Semiconductor
Dual N-CH,60V,8A,RD(max) Less Than 20mOhm at 10V,RD(max) Less Than 22mOhm at 4.5V,VTH 1.2V to 2.4V,SOP-8
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4000+0.5 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G180N06S2 G180N06S2.pdf
G180N06S2
Hersteller: GOFORD SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 60V; 8A; 2W; SOP8
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G18N20K G18N20K.pdf
G18N20K
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,200V,18A,110W,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18N20K G18N20K.pdf
G18N20K
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,200V,18A,110W,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 100 V
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.4 EUR
14+1.51 EUR
50+1.12 EUR
100+0.99 EUR
500+0.77 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18N20T G18N20T.pdf
Hersteller: GOFORD Semiconductor
G18N20T
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
334+0.54 EUR
Mindestbestellmenge: 334 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18N20T G18N20T.pdf
G18N20T
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Planar; unipolar; 200V; 18A; 110W; TO220
Type of transistor: N-MOSFET
Technology: Planar
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 110W
Case: TO220
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 31nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G18N20T G18N20T.pdf
G18N20T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 200V 18A 110W 190m(m
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.56 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18N50T G18N50T.pdf
G18N50T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 500V 18A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 9A, 10V
Power Dissipation (Max): 189.3W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 250 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.41 EUR
10+4.16 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18NP06Y G18NP06Y.pdf
G18NP06Y
Hersteller: Goford Semiconductor
Description: MOSFET N/P-CH 60V 18A TO252-4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18NP06Y G18NP06Y.pdf
Hersteller: Goford Semiconductor
Description: MOSFET N/P-CH 60V 18A TO252-4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1446pF @ 30V, 2696pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.49 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18NP06Y G18NP06Y.pdf
G18NP06Y
Hersteller: Goford Semiconductor
Description: MOSFET N/P-CH 60V 18A TO252-4
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 45W (Tc), 50W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 30V, 2610pF @ 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, 45mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
Supplier Device Package: TO-252-4
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.01 EUR
16+1.34 EUR
100+0.93 EUR
500+0.75 EUR
1000+0.68 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18NP06Y G18NP06Y.pdf
Hersteller: GOFORD Semiconductor
N-P-CH,60V/-60V,18A/-18A,RD(max) Less Than 35mOhm at 10V/45mOhm at -10V,VTH 1.0V to 2.5V/-1.5V-3.5V, SOP-8
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+0.46 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18NP06Y G18NP06Y.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 60/-60V; 18/-18A; 45/50W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 18/-18A
Power dissipation: 45/50W
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 22/25nC
Kind of channel: enhancement
Case: TO252-4
Technology: Trench
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G18P03D3 G18P03D3.pdf
Hersteller: GOFORD Semiconductor
P-CH,-30V,-28A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 15mOhm at -4.5V,VTH -1.0V to -2.5V,DFN3x3-8L
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.35 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18P03D3 G18P03D3.pdf
G18P03D3
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<10M@-10V,RD(MAX)<15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G18P03D3 G18P03D3.pdf
G18P03D3
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<10M@-10V,RD(MAX)<15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G18P03S G18P03S.pdf
Hersteller: GOFORD Semiconductor
P-CH,-30V,-15A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 15mOhm at -4.5V,VTH -1.1V to -2.5V,SOP-8
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4000+0.39 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18P03S G18P03S.pdf
G18P03S
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 15A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.37 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G18P03S G18P03S.pdf
Hersteller: GOFORD Semiconductor
P-CH,-30V,-15A,RD(max) Less Than 10mOhm at -10V,RD(max) Less Than 15mOhm at -4.5V,VTH -1.1V to -2.5V,SOP-8
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4000+0.37 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06HH GOFORD-G1K1P06HH.pdf
Hersteller: GOFORD Semiconductor
P-60V,-4.5A,RD(max) Less Than 110mOhm at -10V,VTH -2V to -4V, SOT-223
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4000+0.15 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06HH GOFORD-G1K1P06HH.pdf
G1K1P06HH
Hersteller: Goford Semiconductor
Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06HH GOFORD-G1K1P06HH.pdf
G1K1P06HH
Hersteller: Goford Semiconductor
Description: P-60V,-4.5A,RD(MAX)<110M@-10V,VT
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 981 pF @ 30 V
auf Bestellung 4550 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
40+0.52 EUR
100+0.32 EUR
500+0.3 EUR
1000+0.2 EUR
Mindestbestellmenge: 32 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LH G1K1P06LH.pdf
Hersteller: GOFORD Semiconductor
G1K1P06LH
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.09 EUR
15000+0.082 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LH G1K1P06LH.pdf
G1K1P06LH
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 4.5A SOT-23-3L
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LH G1K1P06LH.pdf
G1K1P06LH
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ -3A,- 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LH G1K1P06LH.pdf
G1K1P06LH
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 4.5A 3.1W SOT-2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ -3A,- 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
auf Bestellung 721 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
41+0.52 EUR
56+0.37 EUR
100+0.32 EUR
500+0.25 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LL G1K1P06LL.pdf
G1K1P06LL
Hersteller: Goford Semiconductor
Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH-
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LL G1K1P06LL.pdf
Hersteller: GOFORD Semiconductor
P-60V,-3A,RD(max) Less Than 110mOhm at -10V,RD(max) Less Than 130mOhm at -4.5V,VTH -1.0V to -2.5V, SOT-23-6L
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06LL G1K1P06LL.pdf
G1K1P06LL
Hersteller: Goford Semiconductor
Description: P-60V,-4A,RD(MAX)<110M@-10V,VTH-
auf Bestellung 1457 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.94 EUR
37+0.58 EUR
51+0.42 EUR
100+0.37 EUR
500+0.27 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K1P06SH G1K1P06SH.pdf
G1K1P06SH
Hersteller: Goford Semiconductor
Description: MOSFET,P-CH,-60V,-4A,1.2W,SOP-8
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.12 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K2C10S2 GOFORD-G1K2C10S2.pdf
G1K2C10S2
Hersteller: Goford Semiconductor
Description: MOSFET 100V 3A/3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.42 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K2C10S2 GOFORD-G1K2C10S2.pdf
G1K2C10S2
Hersteller: Goford Semiconductor
Description: MOSFET 100V 3A/3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.48 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K2C10S2 GOFORD-G1K2C10S2.pdf
G1K2C10S2
Hersteller: Goford Semiconductor
Description: MOSFET 100V 3A/3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc), 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc), 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 668pF @ 50V, 1732pF @ 50V
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V, 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G1K3N10G GOFORD-G1K3N10G.pdf
G1K3N10G
Hersteller: Goford Semiconductor
Description: N100V, 5A,RD<130M@10V,VTH1V~2V,
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V
auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.03 EUR
10+2.51 EUR
100+2 EUR
500+1.69 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K3N10G GOFORD-G1K3N10G.pdf
G1K3N10G
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 5A; 1.6W; SOT89
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Power dissipation: 1.6W
Case: SOT89
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G1K3N10G GOFORD-G1K3N10G.pdf
G1K3N10G
Hersteller: Goford Semiconductor
Description: N100V, 5A,RD<130M@10V,VTH1V~2V,
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K3N10LL G1K3N10LL.pdf
G1K3N10LL
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 3.4A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K3N10LL G1K3N10LL.pdf
G1K3N10LL
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 3.4A SOT-23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Power Dissipation (Max): 2.28W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 50 V
auf Bestellung 1325 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
38+0.56 EUR
52+0.4 EUR
100+0.36 EUR
500+0.26 EUR
Mindestbestellmenge: 23 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K8P06S2 GOFORD-G1K8P06S2.pdf
G1K8P06S2
Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 60V 3.2A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1K8P06S2 GOFORD-G1K8P06S2.pdf
G1K8P06S2
Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 60V 3.2A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 594pF @ 30V
Rds On (Max) @ Id, Vgs: 170mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 3958 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.9 EUR
30+0.7 EUR
100+0.42 EUR
500+0.39 EUR
1000+0.26 EUR
2000+0.25 EUR
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1NP02LLE G1NP02LLE.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 1.3/-1.1A; ESD
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.3/-1.1A
Power dissipation: 1.25/1.25W
Gate-source voltage: ±10V
Mounting: SMD
Gate charge: 1/1.22nC
Kind of channel: enhancement
Case: SOT23-6
Technology: Trench
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G1NP02LLE G1NP02LLE.pdf
G1NP02LLE
Hersteller: Goford Semiconductor
Description: MOSFET 20V 1.3A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G1NP02LLE G1NP02LLE.pdf
G1NP02LLE
Hersteller: Goford Semiconductor
Description: MOSFET 20V 1.3A SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc), 1.1A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 10V, 177pF @ 10V
Rds On (Max) @ Id, Vgs: 210mOhm @ 650mA, 4.5V, 460mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V, 1.22nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1V @ 250µA, 800mV @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
47+0.45 EUR
65+0.32 EUR
100+0.29 EUR
500+0.21 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2002A goford-g2002a.pdf
G2002A
Hersteller: GOFORD Semiconductor
N-CH,200V,2A,RD(max) Less Than 540mOhm at 10V,RD(max) Less Than 560mOhm at 4.5V,VTH 1.0V to 3.0V, SOT-23-6L
auf Bestellung 2635 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
407+0.44 EUR
543+0.32 EUR
1000+0.27 EUR
Mindestbestellmenge: 407 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2002A G2002A.pdf
G2002A
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 200V 2A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 733 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.15 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2002A goford-g2002a.pdf
G2002A
Hersteller: GOFORD Semiconductor
N-CH,200V,2A,RD(max) Less Than 540mOhm at 10V,RD(max) Less Than 560mOhm at 4.5V,VTH 1.0V to 3.0V, SOT-23-6L
auf Bestellung 2635 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
404+0.44 EUR
539+0.33 EUR
1000+0.29 EUR
Mindestbestellmenge: 404 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2003A G2003A.pdf
G2003A
Hersteller: Goford Semiconductor
Description: N190V, 3A,RD<540M@10V,VTH1.0V~3.
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
20+1.07 EUR
32+0.67 EUR
50+0.49 EUR
100+0.43 EUR
500+0.32 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2003A G2003A.pdf
G2003A
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 190V; 3A; 1.8W; SOT23
Case: SOT23
Mounting: SMD
Power dissipation: 1.8W
Gate charge: 12nC
Polarisation: unipolar
Technology: Trench
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 190V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G2003A G2003A.pdf
Hersteller: GOFORD Semiconductor
N-CH,190V,3A,RD(max) Less Than 540mOhm at 10V,RD(max) Less Than 560mOhm at 4.5V,VTH 1.0V to 3.0V, SOT-23-3L
auf Bestellung 120000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
15000+0.13 EUR
30000+0.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2003A G2003A.pdf
G2003A
Hersteller: Goford Semiconductor
Description: N190V, 3A,RD<540M@10V,VTH1.0V~3.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 2A, 10V
Power Dissipation (Max): 1.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 190 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G2009G
Hersteller: GOFORD Semiconductor
N-CH,200V,9A,RD(max) Less Than 300mOhm at 10V,VTH 1.0V to 2.5V, TO-252
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+0.37 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G200N03S2 G200N03S2.pdf
G200N03S2
Hersteller: Goford Semiconductor
Description: MOSFET,N+N-CH,30V,7A,2W,SOP-8 DU
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G200N03S2 G200N03S2.pdf
G200N03S2
Hersteller: Goford Semiconductor
Description: MOSFET,N+N-CH,30V,7A,2W,SOP-8 DU
auf Bestellung 85 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.11 EUR
31+0.69 EUR
50+0.5 EUR
Mindestbestellmenge: 19 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G200N03S2 G200N03S2.pdf
Hersteller: GOFORD Semiconductor
G200N03S2
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4000+0.17 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G200N06TH G200N06TH.pdf
G200N06TH
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,60V,55A,60W,TO-220
Packaging: Tube
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.39 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G200N06TH G200N06TH.pdf
G200N06TH
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,60V,55A,60W,TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 30 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.14 EUR
16+1.33 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
G200N06TH G200N06TH.pdf
Hersteller: GOFORD Semiconductor
G200N06TH
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+0.42 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH