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G60N04D52 G60N04D52 Goford Semiconductor G60N04D52.pdf Description: MOSFET 40V 35A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
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G60N04D52 GOFORD SEMICONDUCTOR G60N04D52.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 40V; 60A; 65W; DFN5x6-8
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Power dissipation: 65W
Case: DFN5x6-8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
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G60N04D52 G60N04D52 Goford Semiconductor G60N04D52.pdf Description: MOSFET 40V 35A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
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G60N04D52 GOFORD Semiconductor G60N04D52.pdf Dual N-CH,40V,35A,RD(max) Less Than 9mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.0V to 2.5V,DFN5X6-8L
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G60N04D52 G60N04D52 Goford Semiconductor G60N04D52.pdf Description: MOSFET 40V 35A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
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G60N04K G60N04K GOFORD SEMICONDUCTOR G60N04K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 60A; 65W; TO252
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Power dissipation: 65W
Case: TO252
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
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G60N04K G60N04K Goford Semiconductor G60N04K.pdf Description: N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 20 V
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G60N04K G60N04K Goford Semiconductor G60N04K.pdf Description: N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 20 V
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G60N04K GOFORD Semiconductor G60N04K.pdf N-CH,40V,RD(max) Less Than 7mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.1V to 2.5V ,TO-252
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G60N06T G60N06T Goford Semiconductor G60N06T.pdf Description: N60V, 50A,RD<17M@10V,VTH1.0V~2.0
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2333 pF @ 30 V
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G60N06T G60N06T GOFORD SEMICONDUCTOR G60N06T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 55A; 60W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 55A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Power dissipation: 60W
Gate charge: 39nC
Technology: Trench
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G60N06T GOFORD Semiconductor G60N06T.pdf N-CH,60V,50A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 21mOhm at 4.5V,VTH 1.0V to 2.0V, TO-220
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G60N10K G60N10K Goford Semiconductor G60N10K.pdf Description: MOSFET N-CH 100V 60A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4118 pF @ 50 V
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G60N10K G60N10K Goford Semiconductor G60N10K.pdf Description: N90V,60A,RD<25M@10V,VTH0.8V~2.5V
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5944 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 105W (Tc)
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G60N10K GOFORD Semiconductor G60N10K.pdf N-CH,60V,60A,RD(max) Less Than 25mOhm at 10V,RD(max) Less Than 30mOhm at 4.5V,VTH 0.8V to 2.5V, TO-252
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G60N10K G60N10K Goford Semiconductor G60N10K.pdf Description: N90V,60A,RD<25M@10V,VTH0.8V~2.5V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5944 pF @ 50 V
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G60N10T GOFORD Semiconductor G60N10T.pdf N-CH,100V,60A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 19mOhm at 4.5V,VTH 0.8V to 2.5V, TO-220
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G60N10T G60N10T Goford Semiconductor G60N10T.pdf Description: N100V,RD(MAX)<25M@10V,RD(MAX)<30
Input Capacitance (Ciss) (Max) @ Vds: 5986 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 132W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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G630J G630J Goford Semiconductor GOFORD-G630J.pdf Description: N200V, 9A,RD<0.28@10V,VTH1.0V~3.
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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G630J G630J Goford Semiconductor GOFORD-G630J.pdf Description: N200V, 9A,RD<0.28@10V,VTH1.0V~3.
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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G65P06D5 GOFORD Semiconductor GOFORD-G65P06D5.pdf P-Channel Enhancement Mode Power MOSFET
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G65P06D5 G65P06D5 Goford Semiconductor GOFORD-G65P06D5.pdf Description: MOSFET P-CH 60V 65A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
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G65P06F G65P06F Goford Semiconductor Description: P-CH, -60V, 65A, RD(MAX)<18M@-10
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G65P06K G65P06K Goford Semiconductor GOFORD-G65P06K.pdf Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 125W (Tc)
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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G65P06K G65P06K Goford Semiconductor GOFORD-G65P06K.pdf Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 125W (Tc)
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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G65P06T GOFORD Semiconductor G65P06T.pdf P-CH,-60V,-65A,RD(max) Less Than 18mOhm at -10V,VTH -2.0V to -3.5V, TO-220
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G65P06T G65P06T Goford Semiconductor G65P06T.pdf Description: P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
Input Capacitance (Ciss) (Max) @ Vds: 6390 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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G66 G66 Goford Semiconductor G66.pdf Description: P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
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G66 G66 Goford Semiconductor G66.pdf Description: P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Produkt ist nicht verfügbar
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G6N02L G6N02L Goford Semiconductor G6N02L.pdf Description: MOSFET N-CH 20V 6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 15 V
Produkt ist nicht verfügbar
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G6N02L G6N02L Goford Semiconductor G6N02L.pdf Description: MOSFET N-CH 20V 6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 15 V
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G6N90F GOFORD SEMICONDUCTOR G6N90F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Planar; unipolar; 900V; 6A; 69W; TO220F
Type of transistor: N-MOSFET
Technology: Planar
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Power dissipation: 69W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 25nC
Kind of channel: enhancement
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G6N90F G6N90F Goford Semiconductor G6N90F.pdf Description: MOSFET N-CH 900V 6A 69W 3(MAX) T
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 3A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 450 V
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G6P06 G6P06 Goford Semiconductor G6P06.pdf Description: MOSFET P-CH 60V 6A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 4A, 10V
Power Dissipation (Max): 4.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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G700P06D3 G700P06D3 Goford Semiconductor G700P06D3.pdf Description: MOSFET P-CH 60V 18A 32W 70m(max)
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Packaging: Tape & Reel (TR)
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G700P06D5 G700P06D5 Goford Semiconductor G700P06D5.pdf Description: MOSFET P-CH 60V 25A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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G700P06H G700P06H Goford Semiconductor GOFORD-G700P06H.pdf Description: P-60V,-5A,RD(MAX)<75M@-10V,VTH-1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1459 pF @ 30 V
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G700P06H G700P06H Goford Semiconductor GOFORD-G700P06H.pdf Description: P-60V,-5A,RD(MAX)<75M@-10V,VTH-1
Input Capacitance (Ciss) (Max) @ Vds: 1459 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Tc)
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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G700P06J G700P06J Goford Semiconductor GOFORD-G700P06J.pdf Description: P-60V,-23A,RD(MAX)<70M@-10V,VTH-
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 50W (Tc)
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 70mOhm @ 6A, 10V
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G700P06LL G700P06LL Goford Semiconductor GOFORD-G700P06LL.pdf Description: MOSFET P-CH 60V 5A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 30 V
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G700P06LL GOFORD Semiconductor GOFORD-G700P06LL.pdf P-Channel Enhancement Mode Power MOSFET
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G700P06LL GOFORD SEMICONDUCTOR GOFORD-G700P06LL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5A; 3.1W; SOT23-6
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Power dissipation: 3.1W
Case: SOT23-6
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 15.8nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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G700P06T G700P06T Goford Semiconductor G700P06T.pdf Description: P-60V,25A,RD<70M@-10V,VTH1V~-2.5
Input Capacitance (Ciss) (Max) @ Vds: 1428 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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G700P06T G700P06T Goford Semiconductor G700P06T.pdf Description: MOSFET P-CH 60V 25A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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G70N04T G70N04T Goford Semiconductor G70N04T.pdf Description: MOSFET N-CH 40V 70A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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G70P02K G70P02K Goford Semiconductor G70P02K.pdf Description: P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 4.5V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5869 pF @ 7.5 V
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G70P02K G70P02K Goford Semiconductor G70P02K.pdf Description: P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 4.5V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5869 pF @ 7.5 V
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G70P02K G70P02K Goford Semiconductor G70P02K.pdf Description: MOSFET P-CH 15V 70A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
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G70P02K GOFORD Semiconductor G70P02K.pdf P-CH,-15V,-70A,RD(max) Less Than 8.5mOhm at -4.5V,RD(max) Less Than 12mOhm at -2.5V,VTH -0.4V to -1.5V ,TO-252
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G75P04D5 GOFORD Semiconductor G75P04D5.pdf P-Channel Enhancement Mode Power MOSFET
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G75P04D5 GOFORD Semiconductor G75P04D5.pdf P-Channel Enhancement Mode Power MOSFET
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G75P04D5 G75P04D5 Goford Semiconductor G75P04D5.pdf Description: MOSFET P-CH 40V 70A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ -20A, -10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6697 pF @ 20 V
Produkt ist nicht verfügbar
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G75P04D5 G75P04D5 Goford Semiconductor G75P04D5.pdf Description: MOSFET P-CH 40V 70A DFN5*6-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ -20A, -10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6697 pF @ 20 V
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G75P04D5 G75P04D5 Goford Semiconductor G75P04D5.pdf Description: MOSFET P-CH 40V 80A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ -20A, -10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6697 pF @ -20 V
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5000+0.68 EUR
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G75P04D5I G75P04D5I Goford Semiconductor GOFORD-G75P04D5I.pdf Description: P-40V,-70A,RD(MAX)<6.5M@-10V,VTH
Input Capacitance (Ciss) (Max) @ Vds: 6414 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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G75P04FI G75P04FI Goford Semiconductor Description: P-40V,-60A,RD(MAX)<7M@-10V,VTH-1
Input Capacitance (Ciss) (Max) @ Vds: 6275 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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G75P04K GOFORD Semiconductor products-detail.php?ProId=620 P-CH,-40V,-70A,RD(max) Less Than 10mOhm at -10V,VTH -1.2V to -2.5V, TO-252
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G75P04K G75P04K Goford Semiconductor products-detail.php?ProId=620 Description: P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
Produkt ist nicht verfügbar
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G75P04K G75P04K Goford Semiconductor products-detail.php?ProId=620 Description: P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
auf Bestellung 2495 Stücke:
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100+2.02 EUR
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G75P04KI G75P04KI Goford Semiconductor Description: P-40V,-70A,RD(MAX)<6.5M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6586 pF @ 20 V
Produkt ist nicht verfügbar
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G60N04D52 G60N04D52.pdf
G60N04D52
Hersteller: Goford Semiconductor
Description: MOSFET 40V 35A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Produkt ist nicht verfügbar
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G60N04D52 G60N04D52.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 40V; 60A; 65W; DFN5x6-8
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Power dissipation: 65W
Case: DFN5x6-8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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G60N04D52 G60N04D52.pdf
G60N04D52
Hersteller: Goford Semiconductor
Description: MOSFET 40V 35A 8DFN
Part Status: Active
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 20W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Technology: MOSFET (Metal Oxide)
auf Bestellung 4999 Stücke:
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AnzahlPrivatkunde
8+2.81 EUR
12+1.76 EUR
100+1.18 EUR
500+0.92 EUR
1000+0.83 EUR
2000+0.76 EUR
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G60N04D52 G60N04D52.pdf
Hersteller: GOFORD Semiconductor
Dual N-CH,40V,35A,RD(max) Less Than 9mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.0V to 2.5V,DFN5X6-8L
auf Bestellung 5000 Stücke:
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G60N04D52 G60N04D52.pdf
G60N04D52
Hersteller: Goford Semiconductor
Description: MOSFET 40V 35A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1998pF @ 20V
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
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AnzahlPrivatkunde
5000+0.52 EUR
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G60N04K G60N04K.pdf
G60N04K
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 60A; 65W; TO252
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Power dissipation: 65W
Case: TO252
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
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G60N04K G60N04K.pdf
G60N04K
Hersteller: Goford Semiconductor
Description: N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 20 V
auf Bestellung 2500 Stücke:
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2500+0.51 EUR
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G60N04K G60N04K.pdf
G60N04K
Hersteller: Goford Semiconductor
Description: N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2014 pF @ 20 V
auf Bestellung 2357 Stücke:
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17+1.26 EUR
100+0.82 EUR
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G60N04K G60N04K.pdf
Hersteller: GOFORD Semiconductor
N-CH,40V,RD(max) Less Than 7mOhm at 10V,RD(max) Less Than 12mOhm at 4.5V,VTH 1.1V to 2.5V ,TO-252
auf Bestellung 20000 Stücke:
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2500+0.35 EUR
15000+0.32 EUR
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G60N06T G60N06T.pdf
G60N06T
Hersteller: Goford Semiconductor
Description: N60V, 50A,RD<17M@10V,VTH1.0V~2.0
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2333 pF @ 30 V
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G60N06T G60N06T.pdf
G60N06T
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 55A; 60W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 55A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Power dissipation: 60W
Gate charge: 39nC
Technology: Trench
Produkt ist nicht verfügbar
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G60N06T G60N06T.pdf
Hersteller: GOFORD Semiconductor
N-CH,60V,50A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 21mOhm at 4.5V,VTH 1.0V to 2.0V, TO-220
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G60N10K G60N10K.pdf
G60N10K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 60A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4118 pF @ 50 V
auf Bestellung 2500 Stücke:
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G60N10K G60N10K.pdf
G60N10K
Hersteller: Goford Semiconductor
Description: N90V,60A,RD<25M@10V,VTH0.8V~2.5V
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5944 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 105W (Tc)
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G60N10K G60N10K.pdf
Hersteller: GOFORD Semiconductor
N-CH,60V,60A,RD(max) Less Than 25mOhm at 10V,RD(max) Less Than 30mOhm at 4.5V,VTH 0.8V to 2.5V, TO-252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+0.62 EUR
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G60N10K G60N10K.pdf
G60N10K
Hersteller: Goford Semiconductor
Description: N90V,60A,RD<25M@10V,VTH0.8V~2.5V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5944 pF @ 50 V
Produkt ist nicht verfügbar
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G60N10T G60N10T.pdf
Hersteller: GOFORD Semiconductor
N-CH,100V,60A,RD(max) Less Than 17mOhm at 10V,RD(max) Less Than 19mOhm at 4.5V,VTH 0.8V to 2.5V, TO-220
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
227+0.76 EUR
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G60N10T G60N10T.pdf
G60N10T
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<25M@10V,RD(MAX)<30
Input Capacitance (Ciss) (Max) @ Vds: 5986 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 132W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 96 Stücke:
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5+4.33 EUR
50+2.09 EUR
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G630J GOFORD-G630J.pdf
G630J
Hersteller: Goford Semiconductor
Description: N200V, 9A,RD<0.28@10V,VTH1.0V~3.
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 735 Stücke:
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14+1.52 EUR
100+1.17 EUR
500+0.93 EUR
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G630J GOFORD-G630J.pdf
G630J
Hersteller: Goford Semiconductor
Description: N200V, 9A,RD<0.28@10V,VTH1.0V~3.
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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G65P06D5 GOFORD-G65P06D5.pdf
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
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G65P06D5 GOFORD-G65P06D5.pdf
G65P06D5
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 65A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
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G65P06F
G65P06F
Hersteller: Goford Semiconductor
Description: P-CH, -60V, 65A, RD(MAX)<18M@-10
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G65P06K GOFORD-G65P06K.pdf
G65P06K
Hersteller: Goford Semiconductor
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 125W (Tc)
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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G65P06K GOFORD-G65P06K.pdf
G65P06K
Hersteller: Goford Semiconductor
Description: P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
Input Capacitance (Ciss) (Max) @ Vds: 5814 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 125W (Tc)
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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G65P06T G65P06T.pdf
Hersteller: GOFORD Semiconductor
P-CH,-60V,-65A,RD(max) Less Than 18mOhm at -10V,VTH -2.0V to -3.5V, TO-220
auf Bestellung 20000 Stücke:
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G65P06T G65P06T.pdf
G65P06T
Hersteller: Goford Semiconductor
Description: P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
Input Capacitance (Ciss) (Max) @ Vds: 6390 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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G66 G66.pdf
G66
Hersteller: Goford Semiconductor
Description: P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
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G66 G66.pdf
G66
Hersteller: Goford Semiconductor
Description: P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Produkt ist nicht verfügbar
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G6N02L G6N02L.pdf
G6N02L
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 20V 6A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 15 V
Produkt ist nicht verfügbar
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G6N02L G6N02L.pdf
G6N02L
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 20V 6A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 3A, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1151 pF @ 15 V
auf Bestellung 3379 Stücke:
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G6N90F G6N90F.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Planar; unipolar; 900V; 6A; 69W; TO220F
Type of transistor: N-MOSFET
Technology: Planar
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Power dissipation: 69W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 25nC
Kind of channel: enhancement
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G6N90F G6N90F.pdf
G6N90F
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 900V 6A 69W 3(MAX) T
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 3A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 450 V
auf Bestellung 32 Stücke:
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G6P06 G6P06.pdf
G6P06
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 6A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 4A, 10V
Power Dissipation (Max): 4.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 40000 Stücke:
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4000+0.23 EUR
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32000+0.18 EUR
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G700P06D3 G700P06D3.pdf
G700P06D3
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 18A 32W 70m(max)
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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5000+0.21 EUR
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G700P06D5 G700P06D5.pdf
G700P06D5
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 25A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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5000+0.26 EUR
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G700P06H GOFORD-G700P06H.pdf
G700P06H
Hersteller: Goford Semiconductor
Description: P-60V,-5A,RD(MAX)<75M@-10V,VTH-1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1459 pF @ 30 V
auf Bestellung 4940 Stücke:
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G700P06H GOFORD-G700P06H.pdf
G700P06H
Hersteller: Goford Semiconductor
Description: P-60V,-5A,RD(MAX)<75M@-10V,VTH-1
Input Capacitance (Ciss) (Max) @ Vds: 1459 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Tc)
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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2500+0.26 EUR
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G700P06J GOFORD-G700P06J.pdf
G700P06J
Hersteller: Goford Semiconductor
Description: P-60V,-23A,RD(MAX)<70M@-10V,VTH-
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-251
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 50W (Tc)
FET Feature: Standard
Rds On (Max) @ Id, Vgs: 70mOhm @ 6A, 10V
auf Bestellung 112 Stücke:
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25+0.86 EUR
29+0.73 EUR
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G700P06LL GOFORD-G700P06LL.pdf
G700P06LL
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 5A SOT-23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.2A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 30 V
auf Bestellung 12000 Stücke:
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3000+0.15 EUR
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G700P06LL GOFORD-G700P06LL.pdf
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
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G700P06LL GOFORD-G700P06LL.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5A; 3.1W; SOT23-6
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Power dissipation: 3.1W
Case: SOT23-6
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 15.8nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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G700P06T G700P06T.pdf
G700P06T
Hersteller: Goford Semiconductor
Description: P-60V,25A,RD<70M@-10V,VTH1V~-2.5
Input Capacitance (Ciss) (Max) @ Vds: 1428 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 123 Stücke:
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17+1.3 EUR
50+1.07 EUR
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G700P06T G700P06T.pdf
G700P06T
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 25A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+0.43 EUR
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G70N04T G70N04T.pdf
G70N04T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 70A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.52 EUR
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G70P02K G70P02K.pdf
G70P02K
Hersteller: Goford Semiconductor
Description: P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 4.5V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5869 pF @ 7.5 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.58 EUR
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G70P02K G70P02K.pdf
G70P02K
Hersteller: Goford Semiconductor
Description: P15V,RD(MAX)<8.5M@-4.5V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 4.5V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5869 pF @ 7.5 V
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.55 EUR
16+1.33 EUR
100+0.93 EUR
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G70P02K G70P02K.pdf
G70P02K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 15V 70A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 4.5V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.44 EUR
15000+0.4 EUR
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G70P02K G70P02K.pdf
Hersteller: GOFORD Semiconductor
P-CH,-15V,-70A,RD(max) Less Than 8.5mOhm at -4.5V,RD(max) Less Than 12mOhm at -2.5V,VTH -0.4V to -1.5V ,TO-252
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+0.4 EUR
15000+0.37 EUR
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G75P04D5 G75P04D5.pdf
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5000+0.61 EUR
15000+0.55 EUR
30000+0.49 EUR
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G75P04D5 G75P04D5.pdf
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5000+0.61 EUR
15000+0.55 EUR
30000+0.49 EUR
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G75P04D5 G75P04D5.pdf
G75P04D5
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 70A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ -20A, -10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6697 pF @ 20 V
Produkt ist nicht verfügbar
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G75P04D5 G75P04D5.pdf
G75P04D5
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 70A DFN5*6-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ -20A, -10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6697 pF @ 20 V
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.28 EUR
14+1.52 EUR
100+1.06 EUR
500+0.86 EUR
1000+0.79 EUR
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G75P04D5 G75P04D5.pdf
G75P04D5
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 80A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ -20A, -10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6697 pF @ -20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.68 EUR
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G75P04D5I GOFORD-G75P04D5I.pdf
G75P04D5I
Hersteller: Goford Semiconductor
Description: P-40V,-70A,RD(MAX)<6.5M@-10V,VTH
Input Capacitance (Ciss) (Max) @ Vds: 6414 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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G75P04FI
G75P04FI
Hersteller: Goford Semiconductor
Description: P-40V,-60A,RD(MAX)<7M@-10V,VTH-1
Input Capacitance (Ciss) (Max) @ Vds: 6275 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.76 EUR
10+2.46 EUR
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G75P04K products-detail.php?ProId=620
Hersteller: GOFORD Semiconductor
P-CH,-40V,-70A,RD(max) Less Than 10mOhm at -10V,VTH -1.2V to -2.5V, TO-252
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+0.64 EUR
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G75P04K products-detail.php?ProId=620
G75P04K
Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
Produkt ist nicht verfügbar
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G75P04K products-detail.php?ProId=620
G75P04K
Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.92 EUR
10+2.59 EUR
100+2.02 EUR
500+1.67 EUR
1000+1.32 EUR
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G75P04KI
G75P04KI
Hersteller: Goford Semiconductor
Description: P-40V,-70A,RD(MAX)<6.5M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6586 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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