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G900P15D5 G900P15D5 Goford Semiconductor G900P15D5.pdf Description: MOSFET P-CH 150V 60A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
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G900P15D5 G900P15D5 Goford Semiconductor G900P15D5.pdf Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 75 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75
Drain to Source Voltage (Vdss): 150 V
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G900P15K G900P15K Goford Semiconductor G900P15K.pdf Description: P-150V,-50A,RD(MAX)<80M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V
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G900P15K G900P15K Goford Semiconductor G900P15K.pdf Description: P-150V,-50A,RD(MAX)<80M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V
auf Bestellung 200 Stücke:
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G900P15M G900P15M Goford Semiconductor G900P15M.pdf Description: MOSFET P-CH 150V 35A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ 75 V
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G900P15M G900P15M Goford Semiconductor G900P15M.pdf Description: MOSFET P-CH 150V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ -10 V
Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ -75 V
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G900P15M GOFORD Semiconductor G900P15M.pdf P-150V,-60A,RD(max) Less Than 80mOhm at -10V,VTH -1V to -4V, TO-263
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G900P15M G900P15M Goford Semiconductor G900P15M.pdf Description: MOSFET P-CH 150V 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ 75 V
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G900P15T G900P15T Goford Semiconductor G900P15T.pdf Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 75 V
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G900P15T GOFORD Semiconductor G900P15T.pdf P-150V,-60A,RD(max) Less Than 80mOhm at -10V,VTH -1V to -4V, TO-220
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G90P04K G90P04K Goford Semiconductor G90P04K.pdf Description: MOSFET P-CH 40V 90A
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6331 pF @ 20 V
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G90P04K G90P04K Goford Semiconductor G90P04K.pdf Description: MOSFET P-CH 40V 90A
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6331 pF @ 20 V
auf Bestellung 2337 Stücke:
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G9435S G9435S Goford Semiconductor G9435S.pdf Description: P-30V,-5.1A,RD(MAX)<55M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
auf Bestellung 3848 Stücke:
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G9435S G9435S Goford Semiconductor G9435S.pdf Description: P-30V,-5.1A,RD(MAX)<55M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
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GC030N65QF GC030N65QF Goford Semiconductor GC030N65QF.pdf Description: MOSFET N-CH 650V 80A TO-247
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 400 V
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GC041N65QF GC041N65QF GOFORD Semiconductor gc041n65qf.pdf Trans MOSFET N-CH 650V 70A 3-Pin(3+Tab) TO-247
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GC041N65QF GOFORD Semiconductor GC041N65QF.pdf N-Channel Enhancement Mode Power MOSFET
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GC041N65QF GC041N65QF Goford Semiconductor GC041N65QF.pdf Description: MOSFET N-CH 650V 70A TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 400 V
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GC041N65QF GC041N65QF GOFORD Semiconductor gc041n65qf.pdf Trans MOSFET N-CH 650V 70A 3-Pin(3+Tab) TO-247
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GC041N65QF GC041N65QF Goford Semiconductor GC041N65QF.pdf Description: MOSFET N-CH 650V 70A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 400 V
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GC060N65QF GOFORD Semiconductor GC060N65QF.pdf GC060N65QF
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GC060N65QF GC060N65QF GOFORD SEMICONDUCTOR GC060N65QF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 50A; 388W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Power dissipation: 388W
Gate charge: 128nC
Technology: SJ-MOSFET
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GC060N65QF GC060N65QF Goford Semiconductor GC060N65QF.pdf Description: MOSFET,N-CH,650V,50A,388W,TO-247
Packaging: Tube
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GC080N65QF GC080N65QF Goford Semiconductor GC080N65QF.pdf Description: MOSFET N-CH 650V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 380 V
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GC085N65FF GC085N65FF Goford Semiconductor GC085N65FF.pdf Description: MOSFET,N-CH,650V,34A,58W,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 21.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 400 V
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GC085N65QF GC085N65QF GOFORD SEMICONDUCTOR Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 40A; 299W; TO247
Type of transistor: N-MOSFET
Power dissipation: 299W
Case: TO247
Mounting: THT
Gate charge: 76nC
Polarisation: unipolar
Technology: SJ-MOSFET
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
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GC11N65D5 GC11N65D5 Goford Semiconductor GC11N65D5.pdf Description: N650V, 11A,RD<360M@10V,VTH2.5V~4
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
auf Bestellung 2465 Stücke:
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GC11N65D5 GOFORD Semiconductor GC11N65D5.pdf N-CH 650V 11A 360mOhm/MAX at 10V DFN5x6-8L
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GC11N65D5 GOFORD SEMICONDUCTOR GC11N65D5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 78W; DFN5x6-8
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 78W
Case: DFN5x6-8
Gate-source voltage: ±30V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
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GC11N65D5 GC11N65D5 Goford Semiconductor GC11N65D5.pdf Description: MOSFET N-CH 650V 11A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
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GC11N65D5 GC11N65D5 Goford Semiconductor GC11N65D5.pdf Description: N650V, 11A,RD<360M@10V,VTH2.5V~4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Produkt ist nicht verfügbar
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GC11N65F GC11N65F Goford Semiconductor GC11N65F.pdf Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
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GC11N65F GOFORD Semiconductor GC11N65F.pdf N-CH,650V,11A,RD(max) Less Than 360mOhm at 10V,VTH 2.5V to 4V ,TO-220F
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GC11N65F GOFORD SEMICONDUCTOR GC11N65F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 31.3W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 31.3W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
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GC11N65K GC11N65K GOFORD SEMICONDUCTOR GC11N65K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 179W; TO252
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 179W
Case: TO252
Gate-source voltage: ±30V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
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GC11N65K GC11N65K Goford Semiconductor GC11N65K.pdf Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
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GC11N65K GC11N65K Goford Semiconductor GC11N65K.pdf Description: MOSFET N-CH 650V 11A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
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GC11N65K GC11N65K Goford Semiconductor GC11N65K.pdf Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
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10+3.17 EUR
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GC11N65K GOFORD Semiconductor GC11N65K.pdf Small Package MOSFET
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GC11N65M GC11N65M Goford Semiconductor GC11N65M.pdf Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 768 pF @ 50 V
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GC11N65M GC11N65M GOFORD SEMICONDUCTOR GC11N65M.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 78W; TO263
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 78W
Case: TO263
Gate-source voltage: ±30V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
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GC11N65M GC11N65M Goford Semiconductor GC11N65M.pdf Description: MOSFET N-CH 650V 11A TO-263
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GC11N65M GC11N65M Goford Semiconductor GC11N65M.pdf Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 768 pF @ 50 V
Produkt ist nicht verfügbar
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GC11N65T GOFORD Semiconductor GC11N65T.pdf N-CH,650V,11A,RD(max) Less Than 0.36Ohm at 10V,VTH 2.5V to 4.0V, TO-220
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GC11N65T GC11N65T GOFORD SEMICONDUCTOR GC11N65T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 78W; TO220
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 78W
Case: TO220
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
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GC11N65T GC11N65T Goford Semiconductor GC11N65T.pdf Description: MOSFET N-CH 650V 11A TO-220
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GC11N65T GC11N65T Goford Semiconductor GC11N65T.pdf Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
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GC120N65QF GC120N65QF Goford Semiconductor GC120N65QF.pdf Description: MOSFET N-CH 650V 30A TO-247
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GC120N65QF GOFORD Semiconductor GC120N65QF.pdf N-Channel Enhancement Mode Power MOSFET
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GC125N65FF GC125N65FF GOFORD SEMICONDUCTOR GC125N65FF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 25A; 42W; TO220F
Type of transistor: N-MOSFET
Power dissipation: 42W
Case: TO220F
Mounting: THT
Gate charge: 52nC
Polarisation: unipolar
Technology: SJ-MOSFET
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
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GC125N65FF GC125N65FF Goford Semiconductor GC125N65FF.pdf Description: MOSFET,N-CH,650V,25A,42W,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 100 V
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GC125N65QF GC125N65QF Goford Semiconductor GC125N65QF.pdf Description: MOSFET,N-CH,650V,27A,205W,TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
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GC125N65TF GC125N65TF Goford Semiconductor GC125N65TF.pdf Description: MOSFET 650V 25A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
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GC180N65F GOFORD SEMICONDUCTOR GC180N65F.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 37W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
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GC180N65F GC180N65F Goford Semiconductor GC180N65F.pdf Description: MOSFET,N-CH,650V,20A,37W,TO-220F
Packaging: Tube
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GC180N65F GC180N65F Goford Semiconductor GC180N65F.pdf Description: MOSFET,N-CH,650V,20A,37W,TO-220F
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GC180N65MF GC180N65MF Goford Semiconductor GC180N65MF.pdf Description: MOSFET N-CH 650V 20A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1728 pF @ 100 V
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GC180N65MF GC180N65MF Goford Semiconductor GC180N65MF.pdf Description: MOSFET N-CH 650V 20A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1728 pF @ 100 V
auf Bestellung 661 Stücke:
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GC190N65FF GOFORD SEMICONDUCTOR GC190N65FF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 19A; 35W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 35W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Technology: SJ-MOSFET
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GC190N65FF GC190N65FF Goford Semiconductor GC190N65FF.pdf Description: MOSFET,N-CH,650V,19A,35W,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
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G900P15D5 G900P15D5.pdf
G900P15D5
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 150V 60A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.13 EUR
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G900P15D5 G900P15D5.pdf
G900P15D5
Hersteller: Goford Semiconductor
Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 75 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75
Drain to Source Voltage (Vdss): 150 V
Produkt ist nicht verfügbar
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G900P15K G900P15K.pdf
G900P15K
Hersteller: Goford Semiconductor
Description: P-150V,-50A,RD(MAX)<80M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V
Produkt ist nicht verfügbar
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G900P15K G900P15K.pdf
G900P15K
Hersteller: Goford Semiconductor
Description: P-150V,-50A,RD(MAX)<80M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3918 pF @ 75 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.38 EUR
10+2.82 EUR
100+1.93 EUR
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G900P15M G900P15M.pdf
G900P15M
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 150V 35A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ 75 V
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.94 EUR
10+3.19 EUR
100+2.19 EUR
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G900P15M G900P15M.pdf
G900P15M
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 150V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ -10 V
Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ -75 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.29 EUR
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G900P15M G900P15M.pdf
Hersteller: GOFORD Semiconductor
P-150V,-60A,RD(max) Less Than 80mOhm at -10V,VTH -1V to -4V, TO-263
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
800+1.23 EUR
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G900P15M G900P15M.pdf
G900P15M
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 150V 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ -5A, -10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4056 pF @ 75 V
Produkt ist nicht verfügbar
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G900P15T G900P15T.pdf
G900P15T
Hersteller: Goford Semiconductor
Description: P-150V,-60A,RD(MAX)<80M@-10V,VTH
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3932 pF @ 75 V
auf Bestellung 28 Stücke:
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AnzahlPrivatkunde
5+4.5 EUR
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G900P15T G900P15T.pdf
Hersteller: GOFORD Semiconductor
P-150V,-60A,RD(max) Less Than 80mOhm at -10V,VTH -1V to -4V, TO-220
auf Bestellung 400 Stücke:
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AnzahlPrivatkunde
154+1.12 EUR
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G90P04K G90P04K.pdf
G90P04K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 90A
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6331 pF @ 20 V
Produkt ist nicht verfügbar
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G90P04K G90P04K.pdf
G90P04K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 90A
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6331 pF @ 20 V
auf Bestellung 2337 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.87 EUR
18+1.17 EUR
100+0.76 EUR
500+0.6 EUR
1000+0.54 EUR
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G9435S G9435S.pdf
G9435S
Hersteller: Goford Semiconductor
Description: P-30V,-5.1A,RD(MAX)<55M@-10V,VTH
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
auf Bestellung 3848 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
41+0.51 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
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G9435S G9435S.pdf
G9435S
Hersteller: Goford Semiconductor
Description: P-30V,-5.1A,RD(MAX)<55M@-10V,VTH
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
Produkt ist nicht verfügbar
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GC030N65QF GC030N65QF.pdf
GC030N65QF
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 80A TO-247
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 400 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.69 EUR
30+12.3 EUR
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GC041N65QF gc041n65qf.pdf
GC041N65QF
Hersteller: GOFORD Semiconductor
Trans MOSFET N-CH 650V 70A 3-Pin(3+Tab) TO-247
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
22+8.02 EUR
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GC041N65QF GC041N65QF.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 1290 Stücke:
Lieferzeit 14-21 Tag (e)
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30+11.08 EUR
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GC041N65QF GC041N65QF.pdf
GC041N65QF
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 70A TO-247
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+12.85 EUR
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GC041N65QF gc041n65qf.pdf
GC041N65QF
Hersteller: GOFORD Semiconductor
Trans MOSFET N-CH 650V 70A 3-Pin(3+Tab) TO-247
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
900+10.91 EUR
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GC041N65QF GC041N65QF.pdf
GC041N65QF
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 70A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 400 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+22.37 EUR
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GC060N65QF GC060N65QF.pdf
Hersteller: GOFORD Semiconductor
GC060N65QF
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
900+4.19 EUR
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GC060N65QF GC060N65QF.pdf
GC060N65QF
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 50A; 388W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50A
Case: TO247
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Power dissipation: 388W
Gate charge: 128nC
Technology: SJ-MOSFET
Produkt ist nicht verfügbar
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GC060N65QF GC060N65QF.pdf
GC060N65QF
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,650V,50A,388W,TO-247
Packaging: Tube
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+4.37 EUR
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GC080N65QF GC080N65QF.pdf
GC080N65QF
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 50A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 380 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.75 EUR
30+12.34 EUR
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GC085N65FF GC085N65FF.pdf
GC085N65FF
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,650V,34A,58W,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 21.5A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 400 V
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.77 EUR
10+5.8 EUR
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GC085N65QF
GC085N65QF
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 40A; 299W; TO247
Type of transistor: N-MOSFET
Power dissipation: 299W
Case: TO247
Mounting: THT
Gate charge: 76nC
Polarisation: unipolar
Technology: SJ-MOSFET
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
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GC11N65D5 GC11N65D5.pdf
GC11N65D5
Hersteller: Goford Semiconductor
Description: N650V, 11A,RD<360M@10V,VTH2.5V~4
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
auf Bestellung 2465 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.3 EUR
10+3.43 EUR
50+2.62 EUR
100+2.36 EUR
500+1.9 EUR
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GC11N65D5 GC11N65D5.pdf
Hersteller: GOFORD Semiconductor
N-CH 650V 11A 360mOhm/MAX at 10V DFN5x6-8L
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5000+1.24 EUR
Mindestbestellmenge: 5000 Stücke
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GC11N65D5 GC11N65D5.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 78W; DFN5x6-8
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 78W
Case: DFN5x6-8
Gate-source voltage: ±30V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
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GC11N65D5 GC11N65D5.pdf
GC11N65D5
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 11A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.27 EUR
Mindestbestellmenge: 5000 Stücke
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GC11N65D5 GC11N65D5.pdf
GC11N65D5
Hersteller: Goford Semiconductor
Description: N650V, 11A,RD<360M@10V,VTH2.5V~4
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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GC11N65F GC11N65F.pdf
GC11N65F
Hersteller: Goford Semiconductor
Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.68 EUR
10+3.69 EUR
50+2.82 EUR
100+2.55 EUR
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GC11N65F GC11N65F.pdf
Hersteller: GOFORD Semiconductor
N-CH,650V,11A,RD(max) Less Than 360mOhm at 10V,VTH 2.5V to 4V ,TO-220F
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
127+1.37 EUR
15000+1.24 EUR
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GC11N65F GC11N65F.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 31.3W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 31.3W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
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GC11N65K GC11N65K.pdf
GC11N65K
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 179W; TO252
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 179W
Case: TO252
Gate-source voltage: ±30V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
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GC11N65K GC11N65K.pdf
GC11N65K
Hersteller: Goford Semiconductor
Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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GC11N65K GC11N65K.pdf
GC11N65K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 11A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.14 EUR
Mindestbestellmenge: 2500 Stücke
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GC11N65K GC11N65K.pdf
GC11N65K
Hersteller: Goford Semiconductor
Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
auf Bestellung 2182 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.93 EUR
10+3.17 EUR
50+2.4 EUR
100+2.17 EUR
500+1.74 EUR
Mindestbestellmenge: 5 Stücke
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GC11N65K GC11N65K.pdf
Hersteller: GOFORD Semiconductor
Small Package MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+1.12 EUR
15000+1.01 EUR
30000+0.89 EUR
Mindestbestellmenge: 2500 Stücke
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GC11N65M GC11N65M.pdf
GC11N65M
Hersteller: Goford Semiconductor
Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 768 pF @ 50 V
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.87 EUR
10+3.81 EUR
50+2.92 EUR
100+2.63 EUR
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GC11N65M GC11N65M.pdf
GC11N65M
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 78W; TO263
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 78W
Case: TO263
Gate-source voltage: ±30V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
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GC11N65M GC11N65M.pdf
GC11N65M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 11A TO-263
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.46 EUR
Mindestbestellmenge: 800 Stücke
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GC11N65M GC11N65M.pdf
GC11N65M
Hersteller: Goford Semiconductor
Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 768 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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GC11N65T GC11N65T.pdf
Hersteller: GOFORD Semiconductor
N-CH,650V,11A,RD(max) Less Than 0.36Ohm at 10V,VTH 2.5V to 4.0V, TO-220
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
126+1.37 EUR
Mindestbestellmenge: 126 Stücke
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GC11N65T GC11N65T.pdf
GC11N65T
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 11A; 78W; TO220
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 78W
Case: TO220
Gate-source voltage: ±30V
Mounting: THT
Kind of channel: enhancement
Gate charge: 21nC
Produkt ist nicht verfügbar
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GC11N65T GC11N65T.pdf
GC11N65T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 11A TO-220
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.4 EUR
Mindestbestellmenge: 2000 Stücke
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GC11N65T GC11N65T.pdf
GC11N65T
Hersteller: Goford Semiconductor
Description: N650V,RD(MAX)<360M@10V,VTH2.5V~4
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.71 EUR
10+3.7 EUR
50+2.83 EUR
Mindestbestellmenge: 4 Stücke
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GC120N65QF GC120N65QF.pdf
GC120N65QF
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 30A TO-247
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.89 EUR
30+9.88 EUR
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GC120N65QF GC120N65QF.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
30+5.89 EUR
Mindestbestellmenge: 30 Stücke
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GC125N65FF GC125N65FF.pdf
GC125N65FF
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 25A; 42W; TO220F
Type of transistor: N-MOSFET
Power dissipation: 42W
Case: TO220F
Mounting: THT
Gate charge: 52nC
Polarisation: unipolar
Technology: SJ-MOSFET
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
auf Bestellung 911 Stücke:
Lieferzeit 14-21 Tag (e)
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GC125N65FF GC125N65FF.pdf
GC125N65FF
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,650V,25A,42W,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1580 pF @ 100 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.27 EUR
10+4.76 EUR
50+3.68 EUR
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GC125N65QF GC125N65QF.pdf
GC125N65QF
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,650V,27A,205W,TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.96 EUR
10+5.91 EUR
Mindestbestellmenge: 3 Stücke
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GC125N65TF GC125N65TF.pdf
GC125N65TF
Hersteller: Goford Semiconductor
Description: MOSFET 650V 25A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.27 EUR
10+4.76 EUR
Mindestbestellmenge: 3 Stücke
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GC180N65F GC180N65F.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 20A; 37W; TO220F
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 37W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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GC180N65F GC180N65F.pdf
GC180N65F
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,650V,20A,37W,TO-220F
Packaging: Tube
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.48 EUR
Mindestbestellmenge: 2000 Stücke
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GC180N65F GC180N65F.pdf
GC180N65F
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,650V,20A,37W,TO-220F
Produkt ist nicht verfügbar
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GC180N65MF GC180N65MF.pdf
GC180N65MF
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 20A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1728 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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GC180N65MF GC180N65MF.pdf
GC180N65MF
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 650V 20A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1728 pF @ 100 V
auf Bestellung 661 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.29 EUR
10+5.46 EUR
100+3.84 EUR
Mindestbestellmenge: 3 Stücke
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GC190N65FF GC190N65FF.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 650V; 19A; 35W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 35W
Case: TO220F
Gate-source voltage: ±30V
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Technology: SJ-MOSFET
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GC190N65FF GC190N65FF.pdf
GC190N65FF
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,650V,19A,35W,TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.95 EUR
10+3.86 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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