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GT080N10T GT080N10T Goford Semiconductor GT080N10T.pdf Description: MOSFET N-CH 100V 70A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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GT080N10T GT080N10T Goford Semiconductor GT080N10T.pdf Description: N100V, 70A,RD<8M@10V,VTH1.0V~3.0
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 50 V
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GT080N10T GT080N10T GOFORD SEMICONDUCTOR GT080N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 70A; 100W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Power dissipation: 100W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 50nC
Kind of channel: enhancement
Technology: SGT
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GT080N10TI GT080N10TI Goford Semiconductor GOFORD-GT080N10TI.pdf Description: N100V,65A,RD<8M@10V,VTH1.0V~2.5V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2328 pF @ 50 V
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GT085N10D5 GT085N10D5 Goford Semiconductor GT085N10D5.pdf Description: MOSFET N-CH 100V 71A 100W DFN5*6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V
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GT085N10D5 GT085N10D5 Goford Semiconductor GT085N10D5.pdf Description: MOSFET N-CH 100V 71A 100W DFN5*6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V
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GT085N10D5 GT085N10D5 Goford Semiconductor GT085N10D5.pdf Description: MOSFET,N-CH,100V,71A,100W,DFN5*6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 4.5V
Power Dissipation (Max): 100W
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 10 V
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GT088N06T GT088N06T Goford Semiconductor GT088N06T.pdf Description: MOSFET N-CH 60V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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GT088N06T GT088N06T Goford Semiconductor GT088N06T.pdf Description: N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1116 pF @ 30 V
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GT090N06D52 GT090N06D52 Goford Semiconductor GT090N06D52.pdf Description: MOSFET 2N-CH 60V 40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1011pF @ 30V
Rds On (Max) @ Id, Vgs: 14mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
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GT090N06D52 GOFORD Semiconductor GT090N06D52.pdf Dual N-Channel Enhancement Mode Power MOSFET
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GT090N06D5H GT090N06D5H Goford Semiconductor GT090N06D5H.pdf Description: MOSFET N-CH 60V 45A 69W DFN5*6-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 15A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
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GT090N06D5H GT090N06D5H Goford Semiconductor GT090N06D5H.pdf Description: MOSFET N-CH 60V 45A 69W DFN5*6-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 15A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
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GT090N06K GT090N06K Goford Semiconductor GT090N06K.pdf Description: MOSFET N-CH 60V 45A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 30 V
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GT090N06K GT090N06K Goford Semiconductor GT090N06K.pdf Description: MOSFET, N-CH, 60V,45A,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 30 V
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GT090N06K GT090N06K Goford Semiconductor GT090N06K.pdf Description: MOSFET, N-CH, 60V,45A,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 30 V
auf Bestellung 1573 Stücke:
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GT090N06MH GT090N06MH Goford Semiconductor GT090N06MH.pdf Description: MOSFET N-CH 60V 45A 52W 11m(max
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
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GT090N06S GT090N06S Goford Semiconductor GOFORD-GT090N06S.pdf Description: N60V,14A,RD<8M@10V,VTH1.0V~2.4V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1378 pF @ 30 V
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GT095N04D3 GT095N04D3 Goford Semiconductor GT095N04D3.pdf Description: MOSFET N-CH 40V 47A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 947 pF @ 20 V
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GT095N04D3 GT095N04D3 Goford Semiconductor GT095N04D3.pdf Description: MOSFET N-CH 40V 47A DFN3*3-8L
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 22.7W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 947 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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GT095N04D3 GT095N04D3 Goford Semiconductor GT095N04D3.pdf Description: MOSFET N-CH 40V 47A DFN3*3-8L
Input Capacitance (Ciss) (Max) @ Vds: 947 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 22.7W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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GT095N04D5 GT095N04D5 Goford Semiconductor GOFORD-GT095N04D5.pdf Description: MOSFET N-CH 40V 54A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 20 V
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GT095N04D5 GT095N04D5 Goford Semiconductor GOFORD-GT095N04D5.pdf Description: MOSFET N-CH 40V 54A DFN5*6-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 20 V
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100+0.68 EUR
500+0.52 EUR
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GT095N10D5 GT095N10D5 Goford Semiconductor GT095N10D5.pdf Description: MOSFET N-CH 100V 55A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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GT095N10D5 GT095N10D5 Goford Semiconductor GT095N10D5.pdf Description: N100V,RD(MAX)<11M@10V,RD(MAX)<15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 50 V
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GT095N10D5 GT095N10D5 Goford Semiconductor GT095N10D5.pdf Description: N100V,RD(MAX)<11M@10V,RD(MAX)<15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 50 V
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GT095N10D5 GOFORD Semiconductor GT095N10D5.pdf N-Channel Enhancement Mode Power MOSFET
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GT095N10K GT095N10K Goford Semiconductor GT095N10K.pdf Description: N100V, RD(MAX)<10.5M@10V,RD(MAX)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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GT095N10K GT095N10K Goford Semiconductor GT095N10K.pdf Description: N100V, RD(MAX)<10.5M@10V,RD(MAX)
Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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GT095N10S GT095N10S Goford Semiconductor GOFORD-GT095N10S.pdf Description: MOSFET N-CH 100V 11A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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GT1003A GOFORD Semiconductor GT1003A.pdf High Density Cell Design MOSFET
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GT1003A GT1003A GOFORD SEMICONDUCTOR GT1003A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 3.5A; 1.7W; SOT23
Case: SOT23
Power dissipation: 1.7W
Gate charge: 5nC
Polarisation: unipolar
Technology: SGT
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: SMD
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GT1003A GT1003A Goford Semiconductor GT1003A.pdf Description: MOSFET N-CH 100V 3A SOT-23-3L
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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GT1003A GT1003A Goford Semiconductor GT1003A.pdf Description: N100V, 3A,RD<140M@10V,VTH1.0V~3.
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V
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GT1003A GT1003A Goford Semiconductor GT1003A.pdf Description: N100V, 3A,RD<140M@10V,VTH1.0V~3.
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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GT1003D GT1003D Goford Semiconductor GT1003D.pdf Description: N100V,RD(MAX)<130M@10V,RD(MAX)<1
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
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GT1003D GT1003D Goford Semiconductor GT1003D.pdf Description: MOSFET N-CH 100V 3A SOT-23-3L
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
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GT1003D GT1003D Goford Semiconductor GT1003D.pdf Description: N100V,RD(MAX)<130M@10V,RD(MAX)<1
Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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GT1003D GT1003D GOFORD SEMICONDUCTOR GT1003D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 3A; 1.6W; SOT23
Case: SOT23
Power dissipation: 1.6W
Gate charge: 3nC
Polarisation: unipolar
Technology: SGT
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: SMD
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GT1003D GOFORD Semiconductor GT1003D.pdf N-Channel Enhancement Mode Power MOSFET
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GT100N04D3 GOFORD SEMICONDUCTOR GT100N04D3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 35A; 25W; DFN3x3-8
Case: DFN3x3-8
Power dissipation: 25W
Gate charge: 13nC
Polarisation: unipolar
Technology: SGT
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: SMD
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GT100N04D3 GT100N04D3 Goford Semiconductor GT100N04D3.pdf Description: N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V
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GT100N04D3 GOFORD Semiconductor GT100N04D3.pdf N-CH,40V,13A,RD(max) Less Than 10mOhm at 10V,RD(max) Less Than 16mOhm at 4.5V,VTH 1.0V to 2.5V,DFN3x3-8L
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GT100N04D3 GT100N04D3 Goford Semiconductor GT100N04D3.pdf Description: N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V
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GT100N04D3 GT100N04D3 Goford Semiconductor GT100N04D3.pdf Description: MOSFET N-CH 40V 13A DFN3*3-8L
Power Dissipation (Max): 23W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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GT100N04K GT100N04K Goford Semiconductor GOFORD-GT100N04K.pdf Description: N40V,50A,RD<10M@10V,VTH1.2V~2.2V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 20 V
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GT100N04K GT100N04K Goford Semiconductor GOFORD-GT100N04K.pdf Description: N40V,50A,RD<10M@10V,VTH1.2V~2.2V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 20 V
Produkt ist nicht verfügbar
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GT100N12D5 GT100N12D5 Goford Semiconductor products-detail.php?ProId=588 Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
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GT100N12D5 GOFORD Semiconductor products-detail.php?ProId=588 N-Channel Enhancement Mode Power MOSFET
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GT100N12D5 GT100N12D5 Goford Semiconductor products-detail.php?ProId=588 Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
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GT100N12D5 GOFORD SEMICONDUCTOR products-detail.php?ProId=588 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 120V; 70A; 100W; DFN5x6-8
Case: DFN5x6-8
Power dissipation: 100W
Gate charge: 45nC
Polarisation: unipolar
Technology: SGT
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: SMD
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GT100N12K GT100N12K Goford Semiconductor GT100N12K.pdf Description: N120V,65A,RD<12M@10V,VTH2.5V~3.5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 35A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2911 pF @ 60 V
Produkt ist nicht verfügbar
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GT100N12K GOFORD Semiconductor GT100N12K.pdf GT100N12K
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GT100N12K GT100N12K Goford Semiconductor GT100N12K.pdf Description: N120V,65A,RD<12M@10V,VTH2.5V~3.5
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 35A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2911 pF @ 60 V
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GT100N12K GT100N12K GOFORD SEMICONDUCTOR GT100N12K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 120V; 70A; 100W; TO252
Case: TO252
Power dissipation: 100W
Gate charge: 45nC
Polarisation: unipolar
Technology: SGT
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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GT100N12M GT100N12M Goford Semiconductor GT100N12M.pdf Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GT100N12M GT100N12M Goford Semiconductor GT100N12M.pdf Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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GT100N12M GOFORD Semiconductor GT100N12M.pdf N-CH,120V,70A,RD(max) Less Than 10mOhm at 10V, VTH2.5V to 3.5V, TO-263
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GT100N12M GT100N12M GOFORD SEMICONDUCTOR GT100N12M.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 120V; 70A; 100W; TO263
Case: TO263
Power dissipation: 100W
Gate charge: 45nC
Polarisation: unipolar
Technology: SGT
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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GT100N12T GOFORD Semiconductor GT100N12T.pdf N-Channel Enhancement Mode Power MOSFET
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GT080N10T GT080N10T.pdf
GT080N10T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 70A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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GT080N10T GT080N10T.pdf
GT080N10T
Hersteller: Goford Semiconductor
Description: N100V, 70A,RD<8M@10V,VTH1.0V~3.0
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 50 V
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GT080N10T GT080N10T.pdf
GT080N10T
Hersteller: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 70A; 100W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 70A
Power dissipation: 100W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 50nC
Kind of channel: enhancement
Technology: SGT
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GT080N10TI GOFORD-GT080N10TI.pdf
GT080N10TI
Hersteller: Goford Semiconductor
Description: N100V,65A,RD<8M@10V,VTH1.0V~2.5V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2328 pF @ 50 V
Produkt ist nicht verfügbar
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GT085N10D5 GT085N10D5.pdf
GT085N10D5
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 71A 100W DFN5*6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V
Produkt ist nicht verfügbar
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GT085N10D5 GT085N10D5.pdf
GT085N10D5
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 71A 100W DFN5*6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 50 V
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GT085N10D5 GT085N10D5.pdf
GT085N10D5
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,100V,71A,100W,DFN5*6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 4.5V
Power Dissipation (Max): 100W
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 10 V
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GT088N06T GT088N06T.pdf
GT088N06T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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2000+0.62 EUR
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GT088N06T GT088N06T.pdf
GT088N06T
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<9M@10V,RD(MAX)<13M@
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1116 pF @ 30 V
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GT090N06D52 GT090N06D52.pdf
GT090N06D52
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 40A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1011pF @ 30V
Rds On (Max) @ Id, Vgs: 14mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
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GT090N06D52 GT090N06D52.pdf
Hersteller: GOFORD Semiconductor
Dual N-Channel Enhancement Mode Power MOSFET
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GT090N06D5H GT090N06D5H.pdf
GT090N06D5H
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 45A 69W DFN5*6-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 15A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
Produkt ist nicht verfügbar
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GT090N06D5H GT090N06D5H.pdf
GT090N06D5H
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 45A 69W DFN5*6-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 15A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
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GT090N06K GT090N06K.pdf
GT090N06K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 45A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 30 V
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2500+0.44 EUR
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GT090N06K GT090N06K.pdf
GT090N06K
Hersteller: Goford Semiconductor
Description: MOSFET, N-CH, 60V,45A,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 30 V
Produkt ist nicht verfügbar
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GT090N06K GT090N06K.pdf
GT090N06K
Hersteller: Goford Semiconductor
Description: MOSFET, N-CH, 60V,45A,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 14A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1088 pF @ 30 V
auf Bestellung 1573 Stücke:
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100+0.98 EUR
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GT090N06MH GT090N06MH.pdf
GT090N06MH
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 45A 52W 11m(max
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 30 V
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800+0.58 EUR
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GT090N06S GOFORD-GT090N06S.pdf
GT090N06S
Hersteller: Goford Semiconductor
Description: N60V,14A,RD<8M@10V,VTH1.0V~2.4V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1378 pF @ 30 V
Produkt ist nicht verfügbar
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GT095N04D3 GT095N04D3.pdf
GT095N04D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 47A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 947 pF @ 20 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.24 EUR
15000+0.21 EUR
30000+0.19 EUR
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GT095N04D3 GT095N04D3.pdf
GT095N04D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 47A DFN3*3-8L
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 22.7W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 947 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
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GT095N04D3 GT095N04D3.pdf
GT095N04D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 47A DFN3*3-8L
Input Capacitance (Ciss) (Max) @ Vds: 947 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 22.7W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4039 Stücke:
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AnzahlPrivatkunde
16+1.32 EUR
26+0.82 EUR
100+0.52 EUR
500+0.4 EUR
1000+0.36 EUR
2000+0.32 EUR
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GT095N04D5 GOFORD-GT095N04D5.pdf
GT095N04D5
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 54A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.37 EUR
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GT095N04D5 GOFORD-GT095N04D5.pdf
GT095N04D5
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 54A DFN5*6-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 29.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
22+0.98 EUR
100+0.68 EUR
500+0.52 EUR
1000+0.43 EUR
2000+0.38 EUR
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GT095N10D5 GT095N10D5.pdf
GT095N10D5
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 55A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.62 EUR
15000+0.57 EUR
30000+0.51 EUR
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GT095N10D5 GT095N10D5.pdf
GT095N10D5
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<11M@10V,RD(MAX)<15
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.73 EUR
10000+0.7 EUR
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GT095N10D5 GT095N10D5.pdf
GT095N10D5
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<11M@10V,RD(MAX)<15
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 50 V
auf Bestellung 4841 Stücke:
Lieferzeit 10-14 Tag (e)
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8+2.87 EUR
12+1.83 EUR
100+1.23 EUR
500+0.96 EUR
1000+0.88 EUR
2000+0.86 EUR
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GT095N10D5 GT095N10D5.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5000+0.5 EUR
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GT095N10K GT095N10K.pdf
GT095N10K
Hersteller: Goford Semiconductor
Description: N100V, RD(MAX)<10.5M@10V,RD(MAX)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 3922 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.25 EUR
11+2.06 EUR
100+1.38 EUR
500+1.08 EUR
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GT095N10K GT095N10K.pdf
GT095N10K
Hersteller: Goford Semiconductor
Description: N100V, RD(MAX)<10.5M@10V,RD(MAX)
Input Capacitance (Ciss) (Max) @ Vds: 1667 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 74W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GT095N10S GOFORD-GT095N10S.pdf
GT095N10S
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 11A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
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4000+0.58 EUR
16000+0.54 EUR
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GT1003A GT1003A.pdf
Hersteller: GOFORD Semiconductor
High Density Cell Design MOSFET
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.1 EUR
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30000+0.081 EUR
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GT1003A GT1003A.pdf
GT1003A
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 3.5A; 1.7W; SOT23
Case: SOT23
Power dissipation: 1.7W
Gate charge: 5nC
Polarisation: unipolar
Technology: SGT
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: SMD
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GT1003A GT1003A.pdf
GT1003A
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 3A SOT-23-3L
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GT1003A GT1003A.pdf
GT1003A
Hersteller: Goford Semiconductor
Description: N100V, 3A,RD<140M@10V,VTH1.0V~3.
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V
Produkt ist nicht verfügbar
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GT1003A GT1003A.pdf
GT1003A
Hersteller: Goford Semiconductor
Description: N100V, 3A,RD<140M@10V,VTH1.0V~3.
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 1947 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
40+0.54 EUR
100+0.33 EUR
500+0.25 EUR
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GT1003D GT1003D.pdf
GT1003D
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<130M@10V,RD(MAX)<1
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Produkt ist nicht verfügbar
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GT1003D GT1003D.pdf
GT1003D
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 3A SOT-23-3L
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Produkt ist nicht verfügbar
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GT1003D GT1003D.pdf
GT1003D
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<130M@10V,RD(MAX)<1
Input Capacitance (Ciss) (Max) @ Vds: 212 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 4370 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
45+0.46 EUR
100+0.3 EUR
500+0.21 EUR
1000+0.19 EUR
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GT1003D GT1003D.pdf
GT1003D
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 100V; 3A; 1.6W; SOT23
Case: SOT23
Power dissipation: 1.6W
Gate charge: 3nC
Polarisation: unipolar
Technology: SGT
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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GT1003D GT1003D.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.089 EUR
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GT100N04D3 GT100N04D3.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 40V; 35A; 25W; DFN3x3-8
Case: DFN3x3-8
Power dissipation: 25W
Gate charge: 13nC
Polarisation: unipolar
Technology: SGT
Drain current: 35A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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GT100N04D3 GT100N04D3.pdf
GT100N04D3
Hersteller: Goford Semiconductor
Description: N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V
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GT100N04D3 GT100N04D3.pdf
Hersteller: GOFORD Semiconductor
N-CH,40V,13A,RD(max) Less Than 10mOhm at 10V,RD(max) Less Than 16mOhm at 4.5V,VTH 1.0V to 2.5V,DFN3x3-8L
auf Bestellung 5000 Stücke:
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5000+0.2 EUR
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GT100N04D3 GT100N04D3.pdf
GT100N04D3
Hersteller: Goford Semiconductor
Description: N40V, 13A,RD<10M@10V,VTH1.0V~2.5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V
auf Bestellung 1760 Stücke:
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18+1.21 EUR
28+0.75 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
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GT100N04D3 GT100N04D3.pdf
GT100N04D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 13A DFN3*3-8L
Power Dissipation (Max): 23W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
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GT100N04K GOFORD-GT100N04K.pdf
GT100N04K
Hersteller: Goford Semiconductor
Description: N40V,50A,RD<10M@10V,VTH1.2V~2.2V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 20 V
auf Bestellung 500 Stücke:
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17+1.3 EUR
27+0.8 EUR
100+0.51 EUR
500+0.39 EUR
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GT100N04K GOFORD-GT100N04K.pdf
GT100N04K
Hersteller: Goford Semiconductor
Description: N40V,50A,RD<10M@10V,VTH1.2V~2.2V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 644 pF @ 20 V
Produkt ist nicht verfügbar
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GT100N12D5 products-detail.php?ProId=588
GT100N12D5
Hersteller: Goford Semiconductor
Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
auf Bestellung 9965 Stücke:
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7+3.31 EUR
10+2.98 EUR
100+2.39 EUR
500+1.96 EUR
1000+1.63 EUR
2000+1.54 EUR
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GT100N12D5 products-detail.php?ProId=588
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
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5000+0.71 EUR
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GT100N12D5 products-detail.php?ProId=588
GT100N12D5
Hersteller: Goford Semiconductor
Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
auf Bestellung 5000 Stücke:
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GT100N12D5 products-detail.php?ProId=588
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 120V; 70A; 100W; DFN5x6-8
Case: DFN5x6-8
Power dissipation: 100W
Gate charge: 45nC
Polarisation: unipolar
Technology: SGT
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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GT100N12K GT100N12K.pdf
GT100N12K
Hersteller: Goford Semiconductor
Description: N120V,65A,RD<12M@10V,VTH2.5V~3.5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 35A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2911 pF @ 60 V
Produkt ist nicht verfügbar
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GT100N12K GT100N12K.pdf
Hersteller: GOFORD Semiconductor
GT100N12K
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
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2500+0.87 EUR
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GT100N12K GT100N12K.pdf
GT100N12K
Hersteller: Goford Semiconductor
Description: N120V,65A,RD<12M@10V,VTH2.5V~3.5
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 35A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2911 pF @ 60 V
auf Bestellung 2440 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.86 EUR
10+2.46 EUR
100+1.68 EUR
500+1.33 EUR
1000+1.27 EUR
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GT100N12K GT100N12K.pdf
GT100N12K
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 120V; 70A; 100W; TO252
Case: TO252
Power dissipation: 100W
Gate charge: 45nC
Polarisation: unipolar
Technology: SGT
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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GT100N12M GT100N12M.pdf
GT100N12M
Hersteller: Goford Semiconductor
Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GT100N12M GT100N12M.pdf
GT100N12M
Hersteller: Goford Semiconductor
Description: N120V,RD(MAX)<10M@10V,VTH2.5V~3.
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 708 Stücke:
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5+4.88 EUR
10+3.13 EUR
100+2.14 EUR
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GT100N12M GT100N12M.pdf
Hersteller: GOFORD Semiconductor
N-CH,120V,70A,RD(max) Less Than 10mOhm at 10V, VTH2.5V to 3.5V, TO-263
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
800+1.07 EUR
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GT100N12M GT100N12M.pdf
GT100N12M
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 120V; 70A; 100W; TO263
Case: TO263
Power dissipation: 100W
Gate charge: 45nC
Polarisation: unipolar
Technology: SGT
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 120V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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GT100N12T GT100N12T.pdf
Hersteller: GOFORD Semiconductor
N-Channel Enhancement Mode Power MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+1 EUR
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