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G23N06K G23N06K
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Goford Semiconductor G23N06K.pdf Description: N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1343 pF @ 15 V
auf Bestellung 3210 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 14
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G250N03D2E G250N03D2E
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Goford Semiconductor G250N03D2E.pdf Description: MOSFET,N-CH,30V,7.5A,1.9W,6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
300+0.26 EUR
Mindestbestellmenge: 300
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G250N03D2E G250N03D2E
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Goford Semiconductor G250N03D2E.pdf Description: MOSFET,N-CH,30V,7.5A,1.9W,6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Produkt ist nicht verfügbar
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G250N03IE G250N03IE
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Goford Semiconductor G250N03IE.pdf Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
auf Bestellung 1813 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
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G250N03IE
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GOFORD SEMICONDUCTOR G250N03IE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 5.3A; 1.4W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Version: ESD
Technology: Trench
Produkt ist nicht verfügbar
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G250N03IE
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GOFORD Semiconductor G250N03IE.pdf N30V,ESD 5.3A,RD Less Than 25mOhm at 10V,VTH 0.5V to 1.3V, SOT-23
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.056 EUR
Mindestbestellmenge: 3000
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G250N03IE G250N03IE
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G250N03IE.pdf Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
Produkt ist nicht verfügbar
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G250N03IE G250N03IE
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Goford Semiconductor G250N03IE.pdf Description: MOSFET N-CH ESD 30V 5.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.062 EUR
Mindestbestellmenge: 3000
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G25N06K G25N06K
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Goford Semiconductor G25N06K.pdf Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
auf Bestellung 2468 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.39 EUR
21+0.87 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
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G25N06K
Benachrichtigung bei Verfügbarkeit
GOFORD Semiconductor G25N06K.pdf NChannel Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.22 EUR
15000+0.2 EUR
30000+0.17 EUR
Mindestbestellmenge: 2500
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G25N06K G25N06K
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G25N06K.pdf Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.35 EUR
Mindestbestellmenge: 2500
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G26P04D5 G26P04D5
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Goford Semiconductor GOFORD-G26P04D5.pdf Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.31 EUR
15000+0.29 EUR
30000+0.26 EUR
50000+0.24 EUR
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G26P04D5 G26P04D5
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor GOFORD-G26P04D5.pdf Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.41 EUR
Mindestbestellmenge: 5000
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G26P04D5 G26P04D5
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor GOFORD-G26P04D5.pdf Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
auf Bestellung 62723 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
18+0.98 EUR
100+0.68 EUR
500+0.57 EUR
1000+0.48 EUR
2000+0.43 EUR
Mindestbestellmenge: 16
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G26P04K G26P04K
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor products-detail.php?ProId=587 Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.48 EUR
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G26P04K G26P04K
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor products-detail.php?ProId=587 Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
auf Bestellung 5279 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
17+1.08 EUR
100+0.83 EUR
500+0.66 EUR
1000+0.53 EUR
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G28N02T G28N02T
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor GOFORD-G28N02T.pdf Description: N20V, 28A, RD<7.3M@4.5V,VTH0.5V~
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Produkt ist nicht verfügbar
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G28N03D3 G28N03D3
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G28N03D3.pdf Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 896 pF @ 15 V
Produkt ist nicht verfügbar
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G28N03D3 G28N03D3
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G28N03D3.pdf Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 896 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.24 EUR
Mindestbestellmenge: 5000
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G29
Benachrichtigung bei Verfügbarkeit
GOFORD Semiconductor G29.pdf P-Channel Enhancement Mode Power MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.064 EUR
Mindestbestellmenge: 3000
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G29 G29
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G29.pdf Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
Mindestbestellmenge: 3000
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G29 G29
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G29.pdf Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
auf Bestellung 3549 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
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G29 G29
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G29.pdf Description: MOSFET P-CH 15V 4.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.074 EUR
15000+0.068 EUR
30000+0.061 EUR
Mindestbestellmenge: 3000
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G2K2P10D3E G2K2P10D3E
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor GOFORD-G2K2P10D3E.pdf Description: MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V
Produkt ist nicht verfügbar
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G2K2P10D3E G2K2P10D3E
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Goford Semiconductor GOFORD-G2K2P10D3E.pdf Description: MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V
auf Bestellung 4870 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
22+0.81 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.36 EUR
2000+0.32 EUR
Mindestbestellmenge: 19
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G2K2P10S2E G2K2P10S2E
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G2K2P10S2E.pdf Description: MOSFET 2P-CH 100V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
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G2K2P10S2E G2K2P10S2E
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Goford Semiconductor G2K2P10S2E.pdf Description: MOSFET 2P-CH 100V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3763 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.25 EUR
17+1.08 EUR
100+0.75 EUR
500+0.63 EUR
1000+0.53 EUR
2000+0.47 EUR
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G2K2P10S2E G2K2P10S2E
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G2K2P10S2E.pdf Description: MOSFET 2P-CH 100V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.4 EUR
Mindestbestellmenge: 4000
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G2K2P10SE G2K2P10SE
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G2K2P10SE.pdf Description: MOSFET P-CH ESD 100V 3.5A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1653 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.23 EUR
Mindestbestellmenge: 4000
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G2K3N10G G2K3N10G
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G2K3N10G.pdf Description: MOSFET N-CH 100V 2.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.098 EUR
Mindestbestellmenge: 3000
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G2K3N10G G2K3N10G
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G2K3N10G.pdf Description: N100V, 2.5A,RD<220M@10V,VTH1V~2V
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.16 EUR
Mindestbestellmenge: 1000
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G2K3N10G G2K3N10G
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G2K3N10G.pdf Description: N100V, 2.5A,RD<220M@10V,VTH1V~2V
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 50 V
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
39+0.46 EUR
100+0.23 EUR
Mindestbestellmenge: 28
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G2K3N10H
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor Description: MOSFET N-CH 100V 2A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
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G2K3N10L6 G2K3N10L6
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G2K3N10L6.pdf Description: MOSFET 100V 3A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 50V
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-6L
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000
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G2K8P15S G2K8P15S
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G2K8P15S.pdf Description: MOSFET P-CH 150V 2.2A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.38 EUR
Mindestbestellmenge: 4000
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G300N04D3 G300N04D3
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G300N04D3.pdf Description: MOSFET N-CH 40V 6A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 479 pF @ 20 V
Produkt ist nicht verfügbar
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G300N04D3 G300N04D3
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G300N04D3.pdf Description: MOSFET N-CH 40V 6A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 479 pF @ 20 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.11 EUR
15000+0.1 EUR
30000+0.093 EUR
Mindestbestellmenge: 5000
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G300N04D3 G300N04D3
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G300N04D3.pdf Description: MOSFET N-CH 40V 6A DFN3*3-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 479 pF @ 20 V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
38+0.47 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 24
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G300N04L G300N04L
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor GOFORD-G300N04L.pdf Description: MOSFET N-CH 40V 5A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 20 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.078 EUR
15000+0.073 EUR
30000+0.067 EUR
Mindestbestellmenge: 3000
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G300N04L G300N04L
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor GOFORD-G300N04L.pdf Description: MOSFET N-CH 40V 5A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 20 V
Produkt ist nicht verfügbar
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G300N04L G300N04L
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor GOFORD-G300N04L.pdf Description: MOSFET N-CH 40V 5A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 20 V
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
38+0.47 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.14 EUR
Mindestbestellmenge: 27
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G300N04S2
Benachrichtigung bei Verfügbarkeit
GOFORD Semiconductor G300N04S2
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.12 EUR
Mindestbestellmenge: 4000
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G300P06D3 G300P06D3
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G300P06D3.pdf Description: MOSFET P-CH 60V -28A 50W 30M(MAX
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
Mindestbestellmenge: 3000
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G300P06D3 G300P06D3
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor G300P06D3.pdf Description: MOSFET P-CH 60V -28A 50W 30M(MAX
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 30 V
Produkt ist nicht verfügbar
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G300P06D5 G300P06D5
Benachrichtigung bei Verfügbarkeit
Goford Semiconductor GOFORD-G300P06D5.pdf Description: MOSFET P-CH 60V 40A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 30 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.39 EUR
15000+0.36 EUR
Mindestbestellmenge: 5000
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G300P06D5
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GOFORD Semiconductor GOFORD-G300P06D5.pdf P-CH,-60V,-40A,RD(max) Less Than 30mOhm at -10V,VTH -2.0V to -3.0V, DFN5x6-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.34 EUR
Mindestbestellmenge: 5000
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G300P06S G300P06S
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Goford Semiconductor G300P06S.pdf Description: P-CH,-60V,-12A,RD(MAX)<30M@-10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2719 pF @ 30 V
Produkt ist nicht verfügbar
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G300P06S G300P06S
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Goford Semiconductor G300P06S.pdf Description: P-CH,-60V,-12A,RD(MAX)<30M@-10V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2719 pF @ 30 V
auf Bestellung 3391 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.58 EUR
18+1 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
2000+0.41 EUR
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G300P06T G300P06T
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Goford Semiconductor G300P06T.pdf Description: MOSFET P-CH 60V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.51 EUR
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G300P06T G300P06T
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Goford Semiconductor G300P06T.pdf Description: MOSFET, P-CH, 60V,40A,TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2736 pF @ 30 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.25 EUR
50+1.06 EUR
100+0.94 EUR
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G300P06T
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GOFORD Semiconductor G300P06T.pdf P-CH,-60V,-40A,RD(max) Less Than 30mOhm at -10V,VTH -2.0V to -3.0V, TO-220
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
328+0.44 EUR
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G3035
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GOFORD SEMICONDUCTOR G3035.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.6A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Gate charge: 13nC
Power dissipation: 1.4W
Gate-source voltage: ±20V
Case: SOT23
Produkt ist nicht verfügbar
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G3035 G3035
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Goford Semiconductor G3035.pdf Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V
auf Bestellung 4619 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
53+0.33 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
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G3035
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GOFORD Semiconductor G3035.pdf P-CH -30V -4.6A 59mOhm/MAX at -10V, 75mOhm/MAX at -4.5V,SOT-23
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.056 EUR
15000+0.05 EUR
30000+0.044 EUR
Mindestbestellmenge: 3000
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G3035 G3035
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Goford Semiconductor G3035.pdf Description: MOSFET P-CH 30V 4.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.059 EUR
15000+0.055 EUR
30000+0.05 EUR
Mindestbestellmenge: 3000
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G3035 G3035
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Goford Semiconductor G3035.pdf Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V
Produkt ist nicht verfügbar
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G3035L
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GOFORD SEMICONDUCTOR G3035L.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Gate charge: 12.5nC
Power dissipation: 1.4W
Gate-source voltage: ±20V
Case: SOT23
Produkt ist nicht verfügbar
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G3035L G3035L
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Goford Semiconductor G3035L.pdf Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Produkt ist nicht verfügbar
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G3035L G3035L
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Goford Semiconductor G3035L.pdf Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 2718 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
44+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 28
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G3035L
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GOFORD Semiconductor G3035L.pdf P-CH -30V -4.1A 59mOhm/MAX at -10V, 75mOhm/MAX at -4.5V,SOT-23-3L
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.067 EUR
15000+0.059 EUR
30000+0.052 EUR
Mindestbestellmenge: 3000
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G23N06K
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G23N06K.pdf
G23N06K
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1343 pF @ 15 V
auf Bestellung 3210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.83 EUR
100+0.54 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 14
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G250N03D2E
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G250N03D2E.pdf
G250N03D2E
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,30V,7.5A,1.9W,6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+0.26 EUR
Mindestbestellmenge: 300
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G250N03D2E
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G250N03D2E.pdf
G250N03D2E
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,30V,7.5A,1.9W,6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Produkt ist nicht verfügbar
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G250N03IE
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G250N03IE.pdf
G250N03IE
Hersteller: Goford Semiconductor
Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
auf Bestellung 1813 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 31
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G250N03IE
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G250N03IE.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 5.3A; 1.4W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Version: ESD
Technology: Trench
Produkt ist nicht verfügbar
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G250N03IE
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G250N03IE.pdf
Hersteller: GOFORD Semiconductor
N30V,ESD 5.3A,RD Less Than 25mOhm at 10V,VTH 0.5V to 1.3V, SOT-23
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.056 EUR
Mindestbestellmenge: 3000
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G250N03IE
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G250N03IE.pdf
G250N03IE
Hersteller: Goford Semiconductor
Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
Produkt ist nicht verfügbar
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G250N03IE
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G250N03IE.pdf
G250N03IE
Hersteller: Goford Semiconductor
Description: MOSFET N-CH ESD 30V 5.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.062 EUR
Mindestbestellmenge: 3000
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G25N06K
Benachrichtigung bei Verfügbarkeit
G25N06K.pdf
G25N06K
Hersteller: Goford Semiconductor
Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
auf Bestellung 2468 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.87 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 13
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G25N06K
Benachrichtigung bei Verfügbarkeit
G25N06K.pdf
Hersteller: GOFORD Semiconductor
NChannel Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.22 EUR
15000+0.2 EUR
30000+0.17 EUR
Mindestbestellmenge: 2500
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G25N06K
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G25N06K.pdf
G25N06K
Hersteller: Goford Semiconductor
Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.35 EUR
Mindestbestellmenge: 2500
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G26P04D5
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GOFORD-G26P04D5.pdf
G26P04D5
Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.31 EUR
15000+0.29 EUR
30000+0.26 EUR
50000+0.24 EUR
Mindestbestellmenge: 5000
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G26P04D5
Benachrichtigung bei Verfügbarkeit
GOFORD-G26P04D5.pdf
G26P04D5
Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.41 EUR
Mindestbestellmenge: 5000
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G26P04D5
Benachrichtigung bei Verfügbarkeit
GOFORD-G26P04D5.pdf
G26P04D5
Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<18M@-10V,RD(MAX)<22
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
auf Bestellung 62723 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
18+0.98 EUR
100+0.68 EUR
500+0.57 EUR
1000+0.48 EUR
2000+0.43 EUR
Mindestbestellmenge: 16
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G26P04K
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products-detail.php?ProId=587
G26P04K
Hersteller: Goford Semiconductor
Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.48 EUR
Mindestbestellmenge: 2500
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G26P04K
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products-detail.php?ProId=587
G26P04K
Hersteller: Goford Semiconductor
Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
auf Bestellung 5279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
17+1.08 EUR
100+0.83 EUR
500+0.66 EUR
1000+0.53 EUR
Mindestbestellmenge: 15
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G28N02T
Benachrichtigung bei Verfügbarkeit
GOFORD-G28N02T.pdf
G28N02T
Hersteller: Goford Semiconductor
Description: N20V, 28A, RD<7.3M@4.5V,VTH0.5V~
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Produkt ist nicht verfügbar
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G28N03D3
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G28N03D3.pdf
G28N03D3
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 896 pF @ 15 V
Produkt ist nicht verfügbar
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G28N03D3
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G28N03D3.pdf
G28N03D3
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 896 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.24 EUR
Mindestbestellmenge: 5000
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G29
Benachrichtigung bei Verfügbarkeit
G29.pdf
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.064 EUR
Mindestbestellmenge: 3000
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G29
Benachrichtigung bei Verfügbarkeit
G29.pdf
G29
Hersteller: Goford Semiconductor
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
9000+0.1 EUR
Mindestbestellmenge: 3000
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G29
Benachrichtigung bei Verfügbarkeit
G29.pdf
G29
Hersteller: Goford Semiconductor
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
auf Bestellung 3549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
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G29
Benachrichtigung bei Verfügbarkeit
G29.pdf
G29
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 15V 4.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.074 EUR
15000+0.068 EUR
30000+0.061 EUR
Mindestbestellmenge: 3000
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G2K2P10D3E
Benachrichtigung bei Verfügbarkeit
GOFORD-G2K2P10D3E.pdf
G2K2P10D3E
Hersteller: Goford Semiconductor
Description: MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V
Produkt ist nicht verfügbar
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G2K2P10D3E
Benachrichtigung bei Verfügbarkeit
GOFORD-G2K2P10D3E.pdf
G2K2P10D3E
Hersteller: Goford Semiconductor
Description: MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V
auf Bestellung 4870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
22+0.81 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.36 EUR
2000+0.32 EUR
Mindestbestellmenge: 19
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G2K2P10S2E
Benachrichtigung bei Verfügbarkeit
G2K2P10S2E.pdf
G2K2P10S2E
Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 100V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
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G2K2P10S2E
Benachrichtigung bei Verfügbarkeit
G2K2P10S2E.pdf
G2K2P10S2E
Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 100V 3.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3763 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
17+1.08 EUR
100+0.75 EUR
500+0.63 EUR
1000+0.53 EUR
2000+0.47 EUR
Mindestbestellmenge: 15
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G2K2P10S2E
Benachrichtigung bei Verfügbarkeit
G2K2P10S2E.pdf
G2K2P10S2E
Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 100V 3.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1623pF @ 50V
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.4 EUR
Mindestbestellmenge: 4000
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G2K2P10SE
Benachrichtigung bei Verfügbarkeit
G2K2P10SE.pdf
G2K2P10SE
Hersteller: Goford Semiconductor
Description: MOSFET P-CH ESD 100V 3.5A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 3A, 10V
FET Feature: Standard
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1653 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.23 EUR
Mindestbestellmenge: 4000
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G2K3N10G
Benachrichtigung bei Verfügbarkeit
G2K3N10G.pdf
G2K3N10G
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 2.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.098 EUR
Mindestbestellmenge: 3000
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G2K3N10G
Benachrichtigung bei Verfügbarkeit
G2K3N10G.pdf
G2K3N10G
Hersteller: Goford Semiconductor
Description: N100V, 2.5A,RD<220M@10V,VTH1V~2V
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.16 EUR
Mindestbestellmenge: 1000
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G2K3N10G
Benachrichtigung bei Verfügbarkeit
G2K3N10G.pdf
G2K3N10G
Hersteller: Goford Semiconductor
Description: N100V, 2.5A,RD<220M@10V,VTH1V~2V
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-89
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 436 pF @ 50 V
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
39+0.46 EUR
100+0.23 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
G2K3N10H
Benachrichtigung bei Verfügbarkeit
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 2A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
G2K3N10L6
Benachrichtigung bei Verfügbarkeit
G2K3N10L6.pdf
G2K3N10L6
Hersteller: Goford Semiconductor
Description: MOSFET 100V 3A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 50V
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-6L
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
G2K8P15S
Benachrichtigung bei Verfügbarkeit
G2K8P15S.pdf
G2K8P15S
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 150V 2.2A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.38 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
G300N04D3
Benachrichtigung bei Verfügbarkeit
G300N04D3.pdf
G300N04D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 6A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 479 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G300N04D3
Benachrichtigung bei Verfügbarkeit
G300N04D3.pdf
G300N04D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 6A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 479 pF @ 20 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.11 EUR
15000+0.1 EUR
30000+0.093 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
G300N04D3
Benachrichtigung bei Verfügbarkeit
G300N04D3.pdf
G300N04D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 6A DFN3*3-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 479 pF @ 20 V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
38+0.47 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
G300N04L
Benachrichtigung bei Verfügbarkeit
GOFORD-G300N04L.pdf
G300N04L
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 5A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 20 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.078 EUR
15000+0.073 EUR
30000+0.067 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
G300N04L
Benachrichtigung bei Verfügbarkeit
GOFORD-G300N04L.pdf
G300N04L
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 5A SOT-23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 20 V
Produkt ist nicht verfügbar
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G300N04L
Benachrichtigung bei Verfügbarkeit
GOFORD-G300N04L.pdf
G300N04L
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 40V 5A SOT-23-3L
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 20 V
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
38+0.47 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.14 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
G300N04S2
Benachrichtigung bei Verfügbarkeit
Hersteller: GOFORD Semiconductor
G300N04S2
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.12 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
G300P06D3
Benachrichtigung bei Verfügbarkeit
G300P06D3.pdf
G300P06D3
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V -28A 50W 30M(MAX
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.35 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
G300P06D3
Benachrichtigung bei Verfügbarkeit
G300P06D3.pdf
G300P06D3
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V -28A 50W 30M(MAX
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 30 V
Produkt ist nicht verfügbar
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G300P06D5
Benachrichtigung bei Verfügbarkeit
GOFORD-G300P06D5.pdf
G300P06D5
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 40A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 30 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.39 EUR
15000+0.36 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
G300P06D5
Benachrichtigung bei Verfügbarkeit
GOFORD-G300P06D5.pdf
Hersteller: GOFORD Semiconductor
P-CH,-60V,-40A,RD(max) Less Than 30mOhm at -10V,VTH -2.0V to -3.0V, DFN5x6-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.34 EUR
Mindestbestellmenge: 5000
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G300P06S
Benachrichtigung bei Verfügbarkeit
G300P06S.pdf
G300P06S
Hersteller: Goford Semiconductor
Description: P-CH,-60V,-12A,RD(MAX)<30M@-10V,
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2719 pF @ 30 V
Produkt ist nicht verfügbar
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G300P06S
Benachrichtigung bei Verfügbarkeit
G300P06S.pdf
G300P06S
Hersteller: Goford Semiconductor
Description: P-CH,-60V,-12A,RD(MAX)<30M@-10V,
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 8A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2719 pF @ 30 V
auf Bestellung 3391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
18+1 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
2000+0.41 EUR
Mindestbestellmenge: 12
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G300P06T
Benachrichtigung bei Verfügbarkeit
G300P06T.pdf
G300P06T
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.51 EUR
Mindestbestellmenge: 2000
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G300P06T
Benachrichtigung bei Verfügbarkeit
G300P06T.pdf
G300P06T
Hersteller: Goford Semiconductor
Description: MOSFET, P-CH, 60V,40A,TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2736 pF @ 30 V
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
50+1.06 EUR
100+0.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
G300P06T
Benachrichtigung bei Verfügbarkeit
G300P06T.pdf
Hersteller: GOFORD Semiconductor
P-CH,-60V,-40A,RD(max) Less Than 30mOhm at -10V,VTH -2.0V to -3.0V, TO-220
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
328+0.44 EUR
Mindestbestellmenge: 328
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G3035
Benachrichtigung bei Verfügbarkeit
G3035.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.6A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Gate charge: 13nC
Power dissipation: 1.4W
Gate-source voltage: ±20V
Case: SOT23
Produkt ist nicht verfügbar
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G3035
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G3035.pdf
G3035
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V
auf Bestellung 4619 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
53+0.33 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
G3035
Benachrichtigung bei Verfügbarkeit
G3035.pdf
Hersteller: GOFORD Semiconductor
P-CH -30V -4.6A 59mOhm/MAX at -10V, 75mOhm/MAX at -4.5V,SOT-23
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.056 EUR
15000+0.05 EUR
30000+0.044 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
G3035
Benachrichtigung bei Verfügbarkeit
G3035.pdf
G3035
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 4.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.059 EUR
15000+0.055 EUR
30000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
G3035
Benachrichtigung bei Verfügbarkeit
G3035.pdf
G3035
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 607 pF @ 15 V
Produkt ist nicht verfügbar
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G3035L
Benachrichtigung bei Verfügbarkeit
G3035L.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -4.1A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.1A
Gate charge: 12.5nC
Power dissipation: 1.4W
Gate-source voltage: ±20V
Case: SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3035L
Benachrichtigung bei Verfügbarkeit
G3035L.pdf
G3035L
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G3035L
Benachrichtigung bei Verfügbarkeit
G3035L.pdf
G3035L
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<59M@-10V,RD(MAX)<75
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 59mOhm @ 2.1A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 2718 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
44+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
G3035L
Benachrichtigung bei Verfügbarkeit
G3035L.pdf
Hersteller: GOFORD Semiconductor
P-CH -30V -4.1A 59mOhm/MAX at -10V, 75mOhm/MAX at -4.5V,SOT-23-3L
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.067 EUR
15000+0.059 EUR
30000+0.052 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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