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G220P02D2 GOFORD Semiconductor GOFORD-G220P02D2.pdf P-CH,-20V,-8A,RD(max) Less Than 20mOhm at -10V,RD(max) Less Than 25mOhm at -4.5V,VTH -0.5V to -1.2V, DFN2X2-6L
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G220P03D32 G220P03D32 Goford Semiconductor G220P03D32.pdf Description: MOSFET 2P-CH 30V 12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05) Dual
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G220P03D32 G220P03D32 Goford Semiconductor G220P03D32.pdf Description: MOSFET 2P-CH 30V 12A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05) Dual
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G220P03S2 G220P03S2 Goford Semiconductor G220P03S2.pdf Description: MOSFET 2P-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
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G220P03S2 G220P03S2 Goford Semiconductor G220P03S2.pdf Description: MOSFET 2P-CH 30V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
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G2304 G2304 Goford Semiconductor G2304.pdf Description: MOSFET N-CH 30V 3.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
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G2304 G2304 Goford Semiconductor G2304.pdf Description: MOSFET N-CH 30V 3.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
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G2305 GOFORD Semiconductor G2305.pdf P-CH,-20V,-4.8A,RD(max) Less Than 50mOhm at -4.5V,RD(max) Less Than 70mOhm at -2.5V,VTH -0.45V to -1.0V ,SOT-23
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G2305 G2305 Goford Semiconductor G2305.pdf Description: P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7
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G2305 G2305 Goford Semiconductor G2305.pdf Description: P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7
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G230P06D5 G230P06D5 Goford Semiconductor G230P06D5.pdf Description: MOSFET P-CH 60V 48A DFN5*6-8L
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G230P06D5 G230P06D5 Goford Semiconductor G230P06D5.pdf Description: MOSFET P-CH 60V 48A DFN5*6-8L
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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G230P06D5 GOFORD SEMICONDUCTOR G230P06D5.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -48A; 105W; DFN5x6-8
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -48A
Power dissipation: 105W
Case: DFN5x6-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
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G230P06D5 G230P06D5 Goford Semiconductor G230P06D5.pdf Description: MOSFET P-CH 60V 48A DFN5*6-8L
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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G230P06F G230P06F Goford Semiconductor G230P06F.pdf Description: MOSFET P-CH 60V 42A TO-220F
Input Capacitance (Ciss) (Max) @ Vds: 4669 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 67.57W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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G230P06F GOFORD SEMICONDUCTOR G230P06F.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -42A; 67.57W; TO220F
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -42A
Power dissipation: 67.57W
Case: TO220F
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 62nC
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G230P06K G230P06K Goford Semiconductor G230P06K.pdf Description: P-CH,-60V,-60A,RD(MAX)<20M@-10V,
Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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G230P06K G230P06K GOFORD SEMICONDUCTOR G230P06K.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -60A; 115W; TO252
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -60A
Power dissipation: 115W
Case: TO252
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
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G230P06K G230P06K Goford Semiconductor G230P06K.pdf Description: P-CH,-60V,-60A,RD(MAX)<20M@-10V,
Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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G230P06K G230P06K Goford Semiconductor G230P06K.pdf Description: MOSFET P-CH 60V 60A TO-252
Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ -30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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G230P06M G230P06M GOFORD SEMICONDUCTOR G230P06M.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -48A; 105W; TO263
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -48A
Power dissipation: 105W
Case: TO263
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
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G230P06M G230P06M Goford Semiconductor G230P06M.pdf Description: MOSFET P-CH 60V 48A 105W TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4505 pF @ 30 V
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G230P06M G230P06M Goford Semiconductor G230P06M.pdf Description: MOSFET P-CH 60V 48A 105W TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4505 pF @ 30 V
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G230P06S G230P06S Goford Semiconductor G230P06S.pdf Description: P-60V,-8A,RD(MAX)<23M@-10V,VTH-2
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G230P06S G230P06S GOFORD SEMICONDUCTOR G230P06S.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -9A; 3W; SOP8
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
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G230P06S G230P06S Goford Semiconductor G230P06S.pdf Description: MOSFET P-CH 60V 9A SOP-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4784 pF @ 30 V
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G230P06S G230P06S Goford Semiconductor G230P06S.pdf Description: P-60V,-8A,RD(MAX)<23M@-10V,VTH-2
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G230P06T G230P06T GOFORD SEMICONDUCTOR G230P06T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -60A; 115W; TO220
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -60A
Power dissipation: 115W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 62nC
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G230P06T GOFORD Semiconductor G230P06T.pdf P-CH,-60V,-60A,RD(max) Less Than 20mOhm at -10V,VTH -2.0V to -4.0V ,TO-220
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G230P06T G230P06T Goford Semiconductor G230P06T.pdf Description: MOSFET P-CH 60V 60A TO-220
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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G230P06T G230P06T Goford Semiconductor G230P06T.pdf Description: P-60V,-60A,RD(MAX)<20M@-10V,VTH-
Input Capacitance (Ciss) (Max) @ Vds: 4499 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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G2312 G2312 GOFORD SEMICONDUCTOR G2312.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.25W
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221+0.38 EUR
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G2312 G2312 Goford Semiconductor G2312.pdf Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
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G2312 G2312 Goford Semiconductor G2312.pdf Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
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G23N06K G23N06K Goford Semiconductor G23N06K.pdf Description: N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1343 pF @ 15 V
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G23N06K G23N06K Goford Semiconductor G23N06K.pdf Description: N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1343 pF @ 15 V
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G23N06K G23N06K Goford Semiconductor G23N06K.pdf Description: MOSFET N-CH 60V 23A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
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G250N03D2E G250N03D2E Goford Semiconductor G250N03D2E.pdf Description: MOSFET,N-CH,30V,7.5A,1.9W,6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
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G250N03D2E G250N03D2E Goford Semiconductor G250N03D2E.pdf Description: MOSFET,N-CH,30V,7.5A,1.9W,6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
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G250N03IE GOFORD Semiconductor G250N03IE.pdf N30V,ESD 5.3A,RD Less Than 25mOhm at 10V,VTH 0.5V to 1.3V, SOT-23
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G250N03IE G250N03IE Goford Semiconductor G250N03IE.pdf Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
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G250N03IE G250N03IE GOFORD SEMICONDUCTOR G250N03IE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 5.3A; 1.4W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Version: ESD
Technology: Trench
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G250N03IE G250N03IE Goford Semiconductor G250N03IE.pdf Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
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G250N03IE G250N03IE Goford Semiconductor G250N03IE.pdf Description: MOSFET N-CH ESD 30V 5.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
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G250N03IE GOFORD Semiconductor G250N03IE.pdf N30V,ESD 5.3A,RD Less Than 25mOhm at 10V,VTH 0.5V to 1.3V, SOT-23
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G25N06K GOFORD Semiconductor G25N06K.pdf NChannel Enhancement Mode Power MOSFET
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G25N06K G25N06K Goford Semiconductor G25N06K.pdf Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
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G25N06K G25N06K Goford Semiconductor G25N06K.pdf Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
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G26P04D5 G26P04D5 Goford Semiconductor G26P04D5.pdf Description: MOSFET P-CH 40V 26A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
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G26P04K G26P04K Goford Semiconductor products-detail.php?ProId=587 Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
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G26P04K G26P04K Goford Semiconductor products-detail.php?ProId=587 Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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G28N02T G28N02T Goford Semiconductor GOFORD-G28N02T.pdf Description: N20V, 28A, RD<7.3M@4.5V,VTH0.5V~
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Produkt ist nicht verfügbar
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G28N03D3 G28N03D3 Goford Semiconductor G28N03D3.pdf Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 896 pF @ 15 V
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G28N03D3 G28N03D3 Goford Semiconductor G28N03D3.pdf Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 896 pF @ 15 V
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G29 G29 GOFORD SEMICONDUCTOR G29.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -15V; -4.1A; 1.05W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.1A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.05W
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477+0.18 EUR
688+0.12 EUR
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G29 G29 Goford Semiconductor G29.pdf Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
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3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
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G29 GOFORD Semiconductor G29.pdf P-Channel Enhancement Mode Power MOSFET
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G29 G29 Goford Semiconductor G29.pdf Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
auf Bestellung 3293 Stücke:
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G2K2P10D3E G2K2P10D3E Goford Semiconductor GOFORD-G2K2P10D3E.pdf Description: MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V
Produkt ist nicht verfügbar
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G2K2P10D3E G2K2P10D3E Goford Semiconductor GOFORD-G2K2P10D3E.pdf Description: MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V
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G220P02D2 GOFORD-G220P02D2.pdf
Hersteller: GOFORD Semiconductor
P-CH,-20V,-8A,RD(max) Less Than 20mOhm at -10V,RD(max) Less Than 25mOhm at -4.5V,VTH -0.5V to -1.2V, DFN2X2-6L
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3000+0.14 EUR
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G220P03D32 G220P03D32.pdf
G220P03D32
Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 30V 12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05) Dual
Produkt ist nicht verfügbar
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G220P03D32 G220P03D32.pdf
G220P03D32
Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 30V 12A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1305pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05) Dual
auf Bestellung 4633 Stücke:
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14+1.57 EUR
22+0.98 EUR
100+0.63 EUR
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G220P03S2 G220P03S2.pdf
G220P03S2
Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Produkt ist nicht verfügbar
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G220P03S2 G220P03S2.pdf
G220P03S2
Hersteller: Goford Semiconductor
Description: MOSFET 2P-CH 30V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1277pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24.5nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 3918 Stücke:
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13+1.63 EUR
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G2304 G2304.pdf
G2304
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 3.6A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
auf Bestellung 4828 Stücke:
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33+0.65 EUR
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G2304 G2304.pdf
G2304
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 3.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
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3000+0.13 EUR
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G2305 G2305.pdf
Hersteller: GOFORD Semiconductor
P-CH,-20V,-4.8A,RD(max) Less Than 50mOhm at -4.5V,RD(max) Less Than 70mOhm at -2.5V,VTH -0.45V to -1.0V ,SOT-23
auf Bestellung 30000 Stücke:
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3000+0.065 EUR
15000+0.06 EUR
30000+0.052 EUR
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G2305 G2305.pdf
G2305
Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7
Produkt ist nicht verfügbar
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G2305 G2305.pdf
G2305
Hersteller: Goford Semiconductor
Description: P20V,RD(MAX)<50M@-4.5V,RD(MAX)<7
auf Bestellung 1638 Stücke:
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33+0.65 EUR
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G230P06D5 G230P06D5.pdf
G230P06D5
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 48A DFN5*6-8L
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5000+0.49 EUR
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G230P06D5 G230P06D5.pdf
G230P06D5
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 48A DFN5*6-8L
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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G230P06D5 G230P06D5.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -48A; 105W; DFN5x6-8
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -48A
Power dissipation: 105W
Case: DFN5x6-8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
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G230P06D5 G230P06D5.pdf
G230P06D5
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 48A DFN5*6-8L
Input Capacitance (Ciss) (Max) @ Vds: 5002 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (4.9x5.75)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 105W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 3324 Stücke:
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8+2.68 EUR
13+1.69 EUR
100+1.12 EUR
500+0.87 EUR
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G230P06F G230P06F.pdf
G230P06F
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 42A TO-220F
Input Capacitance (Ciss) (Max) @ Vds: 4669 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220F
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 67.57W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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G230P06F G230P06F.pdf
Hersteller: GOFORD SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -42A; 67.57W; TO220F
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -42A
Power dissipation: 67.57W
Case: TO220F
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 62nC
Produkt ist nicht verfügbar
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G230P06K G230P06K.pdf
G230P06K
Hersteller: Goford Semiconductor
Description: P-CH,-60V,-60A,RD(MAX)<20M@-10V,
Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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G230P06K G230P06K.pdf
G230P06K
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -60A; 115W; TO252
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -60A
Power dissipation: 115W
Case: TO252
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
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G230P06K G230P06K.pdf
G230P06K
Hersteller: Goford Semiconductor
Description: P-CH,-60V,-60A,RD(MAX)<20M@-10V,
Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1171 Stücke:
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AnzahlPrivatkunde
7+3.09 EUR
11+1.96 EUR
100+1.31 EUR
500+1.04 EUR
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G230P06K G230P06K.pdf
G230P06K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 60A TO-252
Input Capacitance (Ciss) (Max) @ Vds: 4581 pF @ -30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ -10A,- 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.61 EUR
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G230P06M G230P06M.pdf
G230P06M
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -48A; 105W; TO263
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -48A
Power dissipation: 105W
Case: TO263
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
Produkt ist nicht verfügbar
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G230P06M G230P06M.pdf
G230P06M
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 48A 105W TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4505 pF @ 30 V
Produkt ist nicht verfügbar
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G230P06M G230P06M.pdf
G230P06M
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 48A 105W TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4505 pF @ 30 V
auf Bestellung 478 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.2 EUR
11+2.03 EUR
100+1.36 EUR
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G230P06S G230P06S.pdf
G230P06S
Hersteller: Goford Semiconductor
Description: P-60V,-8A,RD(MAX)<23M@-10V,VTH-2
auf Bestellung 3914 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.59 EUR
13+1.63 EUR
100+1.08 EUR
500+0.84 EUR
1000+0.76 EUR
2000+0.7 EUR
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G230P06S G230P06S.pdf
G230P06S
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -9A; 3W; SOP8
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Gate charge: 62nC
Produkt ist nicht verfügbar
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G230P06S G230P06S.pdf
G230P06S
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 9A SOP-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4784 pF @ 30 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.46 EUR
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G230P06S G230P06S.pdf
G230P06S
Hersteller: Goford Semiconductor
Description: P-60V,-8A,RD(MAX)<23M@-10V,VTH-2
Produkt ist nicht verfügbar
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G230P06T G230P06T.pdf
G230P06T
Hersteller: GOFORD SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -60A; 115W; TO220
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -60A
Power dissipation: 115W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Gate charge: 62nC
Produkt ist nicht verfügbar
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G230P06T G230P06T.pdf
Hersteller: GOFORD Semiconductor
P-CH,-60V,-60A,RD(max) Less Than 20mOhm at -10V,VTH -2.0V to -4.0V ,TO-220
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
275+0.64 EUR
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G230P06T G230P06T.pdf
G230P06T
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 60A TO-220
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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G230P06T G230P06T.pdf
G230P06T
Hersteller: Goford Semiconductor
Description: P-60V,-60A,RD(MAX)<20M@-10V,VTH-
Input Capacitance (Ciss) (Max) @ Vds: 4499 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
50+1.57 EUR
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G2312 G2312.pdf
G2312
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 20V; 5A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 10.5nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.25W
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
119+0.71 EUR
221+0.38 EUR
512+0.17 EUR
849+0.1 EUR
1000+0.086 EUR
3000+0.074 EUR
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G2312 G2312.pdf
G2312
Hersteller: Goford Semiconductor
Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
auf Bestellung 654 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
33+0.65 EUR
53+0.39 EUR
100+0.25 EUR
500+0.18 EUR
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G2312 G2312.pdf
G2312
Hersteller: Goford Semiconductor
Description: N20V,RD(MAX)<18M@10V,RD(MAX)<20M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Produkt ist nicht verfügbar
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G23N06K G23N06K.pdf
G23N06K
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1343 pF @ 15 V
Produkt ist nicht verfügbar
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G23N06K G23N06K.pdf
G23N06K
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<35M@10V,RD(MAX)<45M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1343 pF @ 15 V
auf Bestellung 3210 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.59 EUR
22+0.99 EUR
100+0.64 EUR
500+0.5 EUR
1000+0.45 EUR
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G23N06K G23N06K.pdf
G23N06K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 23A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.27 EUR
Mindestbestellmenge: 2500 Stücke
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G250N03D2E G250N03D2E.pdf
G250N03D2E
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,30V,7.5A,1.9W,6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Produkt ist nicht verfügbar
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G250N03D2E G250N03D2E.pdf
G250N03D2E
Hersteller: Goford Semiconductor
Description: MOSFET,N-CH,30V,7.5A,1.9W,6-DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
300+0.26 EUR
Mindestbestellmenge: 300 Stücke
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G250N03IE G250N03IE.pdf
Hersteller: GOFORD Semiconductor
N30V,ESD 5.3A,RD Less Than 25mOhm at 10V,VTH 0.5V to 1.3V, SOT-23
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.069 EUR
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G250N03IE G250N03IE.pdf
G250N03IE
Hersteller: Goford Semiconductor
Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
Produkt ist nicht verfügbar
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G250N03IE G250N03IE.pdf
G250N03IE
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 5.3A; 1.4W; SOT23; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.3A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Version: ESD
Technology: Trench
Produkt ist nicht verfügbar
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G250N03IE G250N03IE.pdf
G250N03IE
Hersteller: Goford Semiconductor
Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
auf Bestellung 1813 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
51+0.42 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
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G250N03IE G250N03IE.pdf
G250N03IE
Hersteller: Goford Semiconductor
Description: MOSFET N-CH ESD 30V 5.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.071 EUR
Mindestbestellmenge: 3000 Stücke
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G250N03IE G250N03IE.pdf
Hersteller: GOFORD Semiconductor
N30V,ESD 5.3A,RD Less Than 25mOhm at 10V,VTH 0.5V to 1.3V, SOT-23
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.069 EUR
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G25N06K G25N06K.pdf
Hersteller: GOFORD Semiconductor
NChannel Enhancement Mode Power MOSFET
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+0.27 EUR
15000+0.25 EUR
30000+0.21 EUR
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G25N06K G25N06K.pdf
G25N06K
Hersteller: Goford Semiconductor
Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.44 EUR
Mindestbestellmenge: 2500 Stücke
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G25N06K G25N06K.pdf
G25N06K
Hersteller: Goford Semiconductor
Description: N60V, 25A,RD<27M@10V,VTH1.0V~2.5
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 20A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 30 V
auf Bestellung 2423 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.8 EUR
19+1.12 EUR
100+0.73 EUR
500+0.56 EUR
1000+0.5 EUR
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G26P04D5 G26P04D5.pdf
G26P04D5
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 26A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 12A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2479 pF @ 20 V
auf Bestellung 5000 Stücke:
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5000+0.33 EUR
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G26P04K products-detail.php?ProId=587
G26P04K
Hersteller: Goford Semiconductor
Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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2500+0.57 EUR
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G26P04K products-detail.php?ProId=587
G26P04K
Hersteller: Goford Semiconductor
Description: P-40V,RD(MAX)<18M@-10V,RD(MAX)<2
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 5279 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.46 EUR
17+1.29 EUR
100+0.99 EUR
500+0.79 EUR
1000+0.63 EUR
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G28N02T GOFORD-G28N02T.pdf
G28N02T
Hersteller: Goford Semiconductor
Description: N20V, 28A, RD<7.3M@4.5V,VTH0.5V~
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 12A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V
Produkt ist nicht verfügbar
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G28N03D3 G28N03D3.pdf
G28N03D3
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 896 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.29 EUR
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G28N03D3 G28N03D3.pdf
G28N03D3
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<12M@10V,RD(MAX)<18M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 16A, 10V
Power Dissipation (Max): 23W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 896 pF @ 15 V
Produkt ist nicht verfügbar
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G29 G29.pdf
G29
Hersteller: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -15V; -4.1A; 1.05W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -15V
Drain current: -4.1A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 7.8nC
Kind of channel: enhancement
Technology: Trench
Power dissipation: 1.05W
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
87+0.99 EUR
152+0.56 EUR
250+0.35 EUR
477+0.18 EUR
688+0.12 EUR
1000+0.11 EUR
3000+0.093 EUR
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G29 G29.pdf
G29
Hersteller: Goford Semiconductor
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.17 EUR
6000+0.15 EUR
9000+0.14 EUR
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G29 G29.pdf
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3000+0.08 EUR
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G29 G29.pdf
G29
Hersteller: Goford Semiconductor
Description: P15V,RD(MAX)<30M@-4.5V,RD(MAX)<4
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.05W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
auf Bestellung 3293 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
27+0.8 EUR
44+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.2 EUR
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G2K2P10D3E GOFORD-G2K2P10D3E.pdf
G2K2P10D3E
Hersteller: Goford Semiconductor
Description: MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V
Produkt ist nicht verfügbar
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G2K2P10D3E GOFORD-G2K2P10D3E.pdf
G2K2P10D3E
Hersteller: Goford Semiconductor
Description: MOSFET P-CH ESD 100V 10A DFN3*3-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 6A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 50 V
auf Bestellung 4870 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.13 EUR
22+0.96 EUR
100+0.67 EUR
500+0.52 EUR
1000+0.43 EUR
2000+0.38 EUR
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