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G10N06 G10N06 Goford Semiconductor GOFORD-G10N06.pdf Description: N60V,10A,RD<16M@10V,VTH1.2V~2.2V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 30 V
Produkt ist nicht verfügbar
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G10N10A G10N10A Goford Semiconductor G10N10A.pdf Description: N100V,RD(MAX)130MOHM@10V,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.34 EUR
Mindestbestellmenge: 2500
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G10N10A G10N10A Goford Semiconductor G10N10A.pdf Description: N100V,RD(MAX)130MOHM@10V,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
auf Bestellung 1727 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.39 EUR
21+0.87 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
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G10N10A G10N10A Goford Semiconductor G10N10A.pdf Description: MOSFET N-CH 100V 10A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
auf Bestellung 15000 Stücke:
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2500+0.2 EUR
15000+0.19 EUR
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G10P03 G10P03 Goford Semiconductor G10P03.pdf Description: P30V,RD(MAX)<26M@-4.5V,RD(MAX)<3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 4.5V
Power Dissipation (Max): 21.9W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2067 pF @ 15 V
auf Bestellung 4127 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
2000+0.32 EUR
Mindestbestellmenge: 14
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G10P03 GOFORD Semiconductor G10P03.pdf P-Channel Enhancement Mode Power MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.15 EUR
Mindestbestellmenge: 5000
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G10P03 G10P03 Goford Semiconductor G10P03.pdf Description: MOSFET P-CH 30V 10A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 4.5V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.18 EUR
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G10P03 G10P03 Goford Semiconductor G10P03.pdf Description: P30V,RD(MAX)<26M@-4.5V,RD(MAX)<3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 4.5V
Power Dissipation (Max): 21.9W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2067 pF @ 15 V
Produkt ist nicht verfügbar
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G110N06K GOFORD Semiconductor G110N06K.pdf N-CH,60V,110A,RD(max) Less Than 6.4mOhm at 10V,RD(max) Less Than 8.4mOhm at 4.5V,VTH 1.0V to 2.5V, TO-252
auf Bestellung 5000 Stücke:
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G110N06K G110N06K Goford Semiconductor G110N06K.pdf Description: MOSFET N-CH 60V 110A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 4A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 20000 Stücke:
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2500+0.61 EUR
15000+0.56 EUR
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G110N06K G110N06K Goford Semiconductor G110N06K.pdf Description: N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 4A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5538 pF @ 25 V
auf Bestellung 10000 Stücke:
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2500+0.88 EUR
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G110N06K G110N06K Goford Semiconductor G110N06K.pdf Description: N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 4A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5538 pF @ 25 V
auf Bestellung 2202 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.36 EUR
10+2.15 EUR
100+1.45 EUR
500+1.15 EUR
1000+1.06 EUR
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G110N06T G110N06T Goford Semiconductor G110N06T.pdf Description: MOSFET N-CH 60V 110A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
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1000+1.09 EUR
9000+1.04 EUR
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G110N06T GOFORD Semiconductor G110N06T.pdf N-CH,60V,110A,RD(max) Less Than 6.4mOhm at 10V,RD(max) Less Than 8.4mOhm at 4.5V,VTH 1.0V to 2.5V, TO-220er MOSFET
auf Bestellung 12900 Stücke:
Lieferzeit 14-21 Tag (e)
155+0.93 EUR
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G11S GOFORD Semiconductor G11S.pdf P-CH,-20V,-11A,RD(max) Less Than 18.4mOhm at -4.5V,RD(max) Less Than 24.5mOhm at -2.5V,VTH -0.5V to -1.1V ,SOP-8
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.15 EUR
16000+0.13 EUR
32000+0.12 EUR
Mindestbestellmenge: 4000
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G11S G11S Goford Semiconductor G11S.pdf Description: P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 1A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 10 V
Produkt ist nicht verfügbar
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G11S G11S Goford Semiconductor G11S.pdf Description: P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 1A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 10 V
auf Bestellung 1660 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
25+0.71 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
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G11S G11S Goford Semiconductor G11S.pdf Description: MOSFET P-CH 20V 11A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 1A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2455 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.17 EUR
16000+0.16 EUR
Mindestbestellmenge: 4000
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G120N03D3 GOFORD Semiconductor G120N03D3.pdf G120N03D3
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.2 EUR
Mindestbestellmenge: 5000
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G120N03D3 G120N03D3 Goford Semiconductor G120N03D3.pdf Description: MOSFET N-CH 30V 28A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1077 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.26 EUR
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G120N03D3 G120N03D3 Goford Semiconductor G120N03D3.pdf Description: MOSFET N-CH 30V 28A DFN3*3-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1077 pF @ 15 V
Produkt ist nicht verfügbar
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G120N03D32 G120N03D32 Goford Semiconductor G120N03D32.pdf Description: MOSFET 2N-CH 30V 28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Produkt ist nicht verfügbar
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G120N03D32 GOFORD Semiconductor G120N03D32.pdf G120N03D32
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.21 EUR
Mindestbestellmenge: 5000
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G120N03D32 G120N03D32 Goford Semiconductor G120N03D32.pdf Description: MOSFET 2N-CH 30V 28A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.21 EUR
24+0.75 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
2000+0.3 EUR
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G120P03S2 G120P03S2 Goford Semiconductor G120P03S2.pdf Description: MOSFET 30V 16A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
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G120P03S2 GOFORD Semiconductor G120P03S2.pdf P-CH,-30V,-16A,RD(max) Less Than 14mOhm at -10V,RD(max) Less Than 18mOhm at -4.5V,VTH -1.0V to -2.5V,SOP-8
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.38 EUR
Mindestbestellmenge: 4000
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G120P03S2 G120P03S2 Goford Semiconductor G120P03S2.pdf Description: MOSFET 30V 16A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.45 EUR
Mindestbestellmenge: 4000
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G120P06M GOFORD Semiconductor P-CH,-60V,-120A,RD(max) Less Than 8.5mOhm at -10V,VTH -1.0V to -3.0V, TO-263
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.82 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
G120P06M GOFORD Semiconductor P-CH,-60V,-120A,RD(max) Less Than 8.5mOhm at -10V,VTH -1.0V to -3.0V, TO-263
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
800+1.18 EUR
Mindestbestellmenge: 800
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G120P06T GOFORD Semiconductor P-CH,-60V,-120A,RD(max) Less Than 8.5mOhm at -10V,VTH -1.0V to -3.0V, TO-220
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
229+0.63 EUR
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G12P03D3 G12P03D3 Goford Semiconductor G12P03D3.pdf Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<26
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 15 V
auf Bestellung 2433 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.32 EUR
22+0.82 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.37 EUR
2000+0.34 EUR
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G12P03D3 GOFORD Semiconductor G12P03D3.pdf P-CH -30V -12A 20mOhm/MAX at -10V, 26mOhm/MAX at -4.5V, DFN3x3-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.14 EUR
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G12P03D3 G12P03D3 Goford Semiconductor G12P03D3.pdf Description: MOSFET P-CH 30V 12A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.15 EUR
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G12P03D3 G12P03D3 Goford Semiconductor G12P03D3.pdf Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<26
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.3 EUR
Mindestbestellmenge: 5000
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G12P04K G12P04K Goford Semiconductor GOFORD-G12P04K.pdf Description: P40V,RD(MAX)<35M@-10V,RD(MAX)<45
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 20 V
auf Bestellung 104387 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
21+0.84 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.38 EUR
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G12P04K GOFORD Semiconductor GOFORD-G12P04K.pdf P-CH,-40V,-11A,RD(max) Less Than 35mOhm at -10V,RD(max) Less Than 45mOhm at -4.5V,VTH -1.0V to -2.5V, TO-252
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.19 EUR
15000+0.17 EUR
30000+0.15 EUR
Mindestbestellmenge: 2500
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G12P04K G12P04K Goford Semiconductor GOFORD-G12P04K.pdf Description: P40V,RD(MAX)<35M@-10V,RD(MAX)<45
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 20 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.23 EUR
15000+0.21 EUR
30000+0.19 EUR
50000+0.18 EUR
Mindestbestellmenge: 2500
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G12P04K G12P04K Goford Semiconductor GOFORD-G12P04K.pdf Description: P40V,RD(MAX)<35M@-10V,RD(MAX)<45
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 20 V
Produkt ist nicht verfügbar
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G12P06K G12P06K Goford Semiconductor G12P06K.pdf Description: MOSFET P-CH 60V 12A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.24 EUR
15000+0.23 EUR
30000+0.21 EUR
Mindestbestellmenge: 2500
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G12P06K G12P06K Goford Semiconductor G12P06K.pdf Description: P-60V,-12A,RD(MAX)<75M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1322 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.28 EUR
Mindestbestellmenge: 2500
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G12P06K GOFORD Semiconductor G12P06K.pdf P-CH,-60V,-12A,RD(max) Less Than 75mOhm at -10V,RD(max) Less Than 120mOhm at -4.5V,VTH -1.0V to -3.0V, TO-252
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.21 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
G12P06K G12P06K Goford Semiconductor G12P06K.pdf Description: P-60V,-12A,RD(MAX)<75M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1322 pF @ 30 V
Produkt ist nicht verfügbar
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G12P10K G12P10K Goford Semiconductor products-detail.php?ProId=489 Description: P100V,RD(MAX)<200M@-10V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 57W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G12P10K G12P10K Goford Semiconductor products-detail.php?ProId=489 Description: P100V,RD(MAX)<200M@-10V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 57W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 50 V
auf Bestellung 1157 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
18+0.98 EUR
100+0.68 EUR
500+0.57 EUR
1000+0.48 EUR
Mindestbestellmenge: 16
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G12P10KE G12P10KE Goford Semiconductor G12P10KE.pdf Description: MOSFET P-CH ESD 100V 12A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.28 EUR
15000+0.26 EUR
Mindestbestellmenge: 2500
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G12P10KE G12P10KE Goford Semiconductor G12P10KE.pdf Description: P-100V,ESD,-12A,RD(MAX)<200M@-10
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1652 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.32 EUR
Mindestbestellmenge: 2500
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G12P10KE GOFORD Semiconductor G12P10KE.pdf P-CH,-100V,-12A,RD(max) Less Than 200mOhm at -10V,RD(max) Less Than 250mOhm at -4.5V,VTH -1.2V to -2.5V, TO-252
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.25 EUR
15000+0.22 EUR
30000+0.19 EUR
Mindestbestellmenge: 2500
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G12P10KE G12P10KE Goford Semiconductor G12P10KE.pdf Description: P-100V,ESD,-12A,RD(MAX)<200M@-10
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1652 pF @ 50 V
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
24+0.74 EUR
100+0.5 EUR
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G12P10TE GOFORD Semiconductor G12P10TE.pdf P-CH,-100V,-12A,RD(max) Less Than 200mOhm at -10V,VTH -1.0V to -3.0V, TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
391+0.37 EUR
Mindestbestellmenge: 391
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G12P10TE G12P10TE Goford Semiconductor G12P10TE.pdf Description: P-100V,-12A,RD(MAX)<200M@-10V,VT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
Mindestbestellmenge: 13
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G130N06M G130N06M Goford Semiconductor G130N06M.pdf Description: N60V, 90A,RD<12M@10V,VTH1.0V~2.4
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2867 pF @ 30 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.18 EUR
13+1.38 EUR
100+0.91 EUR
Mindestbestellmenge: 9
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G130N06M G130N06M Goford Semiconductor G130N06M.pdf Description: N60V, 90A,RD<12M@10V,VTH1.0V~2.4
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2867 pF @ 30 V
Produkt ist nicht verfügbar
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G130N06M GOFORD Semiconductor G130N06M.pdf N-CH,60V,90A,RD(max) Less Than 12mOhm at 10V,RD(max) Less Than 14mOhm at 4.5V,VTH 1V to 2.4V, TO-263
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
800+0.36 EUR
Mindestbestellmenge: 800
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G130N06S G130N06S Goford Semiconductor G130N06S.pdf Description: MOSFET, N-CH,60V,9A,RD(MAX)<12M@
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3068 pF @ 30 V
Produkt ist nicht verfügbar
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G130N06S G130N06S Goford Semiconductor G130N06S.pdf Description: MOSFET N-CH 60V 9A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.31 EUR
Mindestbestellmenge: 4000
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G130N06S G130N06S Goford Semiconductor G130N06S.pdf Description: MOSFET, N-CH,60V,9A,RD(MAX)<12M@
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3068 pF @ 30 V
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.46 EUR
20+0.9 EUR
100+0.59 EUR
500+0.45 EUR
1000+0.41 EUR
2000+0.37 EUR
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G130N06S2 G130N06S2 Goford Semiconductor G130N06S2.pdf Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.56 EUR
Mindestbestellmenge: 4000
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G130N06S2 G130N06S2 Goford Semiconductor G130N06S2.pdf Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
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G130N06S2 G130N06S2 Goford Semiconductor G130N06S2.pdf Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3701 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.22 EUR
13+1.4 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
2000+0.63 EUR
Mindestbestellmenge: 8
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G13P04S G13P04S Goford Semiconductor G13P04S.pdf Description: MOSFET P-CH 40V 13A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.34 EUR
Mindestbestellmenge: 4000
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G10N06 GOFORD-G10N06.pdf
G10N06
Hersteller: Goford Semiconductor
Description: N60V,10A,RD<16M@10V,VTH1.2V~2.2V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 30 V
Produkt ist nicht verfügbar
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G10N10A G10N10A.pdf
G10N10A
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)130MOHM@10V,TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.34 EUR
Mindestbestellmenge: 2500
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G10N10A G10N10A.pdf
G10N10A
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)130MOHM@10V,TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
auf Bestellung 1727 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.87 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 13
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G10N10A G10N10A.pdf
G10N10A
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 10A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.2 EUR
15000+0.19 EUR
Mindestbestellmenge: 2500
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G10P03 G10P03.pdf
G10P03
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<26M@-4.5V,RD(MAX)<3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 4.5V
Power Dissipation (Max): 21.9W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2067 pF @ 15 V
auf Bestellung 4127 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
2000+0.32 EUR
Mindestbestellmenge: 14
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G10P03 G10P03.pdf
Hersteller: GOFORD Semiconductor
P-Channel Enhancement Mode Power MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.15 EUR
Mindestbestellmenge: 5000
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G10P03 G10P03.pdf
G10P03
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 10A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 4.5V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.18 EUR
Mindestbestellmenge: 5000
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G10P03 G10P03.pdf
G10P03
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<26M@-4.5V,RD(MAX)<3
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 10A, 4.5V
Power Dissipation (Max): 21.9W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2067 pF @ 15 V
Produkt ist nicht verfügbar
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G110N06K G110N06K.pdf
Hersteller: GOFORD Semiconductor
N-CH,60V,110A,RD(max) Less Than 6.4mOhm at 10V,RD(max) Less Than 8.4mOhm at 4.5V,VTH 1.0V to 2.5V, TO-252
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.52 EUR
Mindestbestellmenge: 2500
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G110N06K G110N06K.pdf
G110N06K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 110A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 4A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.61 EUR
15000+0.56 EUR
Mindestbestellmenge: 2500
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G110N06K G110N06K.pdf
G110N06K
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 4A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5538 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.88 EUR
Mindestbestellmenge: 2500
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G110N06K G110N06K.pdf
G110N06K
Hersteller: Goford Semiconductor
Description: N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 4A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5538 pF @ 25 V
auf Bestellung 2202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.15 EUR
100+1.45 EUR
500+1.15 EUR
1000+1.06 EUR
Mindestbestellmenge: 6
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G110N06T G110N06T.pdf
G110N06T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 110A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.09 EUR
9000+1.04 EUR
Mindestbestellmenge: 1000
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G110N06T G110N06T.pdf
Hersteller: GOFORD Semiconductor
N-CH,60V,110A,RD(max) Less Than 6.4mOhm at 10V,RD(max) Less Than 8.4mOhm at 4.5V,VTH 1.0V to 2.5V, TO-220er MOSFET
auf Bestellung 12900 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
155+0.93 EUR
Mindestbestellmenge: 155
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G11S G11S.pdf
Hersteller: GOFORD Semiconductor
P-CH,-20V,-11A,RD(max) Less Than 18.4mOhm at -4.5V,RD(max) Less Than 24.5mOhm at -2.5V,VTH -0.5V to -1.1V ,SOP-8
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.15 EUR
16000+0.13 EUR
32000+0.12 EUR
Mindestbestellmenge: 4000
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G11S G11S.pdf
G11S
Hersteller: Goford Semiconductor
Description: P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 1A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 10 V
Produkt ist nicht verfügbar
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G11S G11S.pdf
G11S
Hersteller: Goford Semiconductor
Description: P-20V,RD(MAX)<18.4M@-4.5V,RD(MAX
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 1A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 10 V
auf Bestellung 1660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
25+0.71 EUR
100+0.45 EUR
500+0.34 EUR
1000+0.31 EUR
Mindestbestellmenge: 16
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G11S G11S.pdf
G11S
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 20V 11A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 18.4mOhm @ 1A, 4.5V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2455 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.17 EUR
16000+0.16 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
G120N03D3 G120N03D3.pdf
Hersteller: GOFORD Semiconductor
G120N03D3
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.2 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
G120N03D3 G120N03D3.pdf
G120N03D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 28A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1077 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.26 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
G120N03D3 G120N03D3.pdf
G120N03D3
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 28A DFN3*3-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1077 pF @ 15 V
Produkt ist nicht verfügbar
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G120N03D32 G120N03D32.pdf
G120N03D32
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 30V 28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G120N03D32 G120N03D32.pdf
Hersteller: GOFORD Semiconductor
G120N03D32
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.21 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
G120N03D32 G120N03D32.pdf
G120N03D32
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 30V 28A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1089pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
auf Bestellung 4985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
24+0.75 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
2000+0.3 EUR
Mindestbestellmenge: 15
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G120P03S2 G120P03S2.pdf
G120P03S2
Hersteller: Goford Semiconductor
Description: MOSFET 30V 16A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
G120P03S2 G120P03S2.pdf
Hersteller: GOFORD Semiconductor
P-CH,-30V,-16A,RD(max) Less Than 14mOhm at -10V,RD(max) Less Than 18mOhm at -4.5V,VTH -1.0V to -2.5V,SOP-8
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.38 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
G120P03S2 G120P03S2.pdf
G120P03S2
Hersteller: Goford Semiconductor
Description: MOSFET 30V 16A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2835pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.45 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
G120P06M
Hersteller: GOFORD Semiconductor
P-CH,-60V,-120A,RD(max) Less Than 8.5mOhm at -10V,VTH -1.0V to -3.0V, TO-263
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.82 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
G120P06M
Hersteller: GOFORD Semiconductor
P-CH,-60V,-120A,RD(max) Less Than 8.5mOhm at -10V,VTH -1.0V to -3.0V, TO-263
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+1.18 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
G120P06T
Hersteller: GOFORD Semiconductor
P-CH,-60V,-120A,RD(max) Less Than 8.5mOhm at -10V,VTH -1.0V to -3.0V, TO-220
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
229+0.63 EUR
Mindestbestellmenge: 229
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G12P03D3 G12P03D3.pdf
G12P03D3
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<26
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 15 V
auf Bestellung 2433 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
22+0.82 EUR
100+0.53 EUR
500+0.41 EUR
1000+0.37 EUR
2000+0.34 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
G12P03D3 G12P03D3.pdf
Hersteller: GOFORD Semiconductor
P-CH -30V -12A 20mOhm/MAX at -10V, 26mOhm/MAX at -4.5V, DFN3x3-8L
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.14 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
G12P03D3 G12P03D3.pdf
G12P03D3
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 30V 12A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.15 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
G12P03D3 G12P03D3.pdf
G12P03D3
Hersteller: Goford Semiconductor
Description: P30V,RD(MAX)<20M@-10V,RD(MAX)<26
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.3 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
G12P04K GOFORD-G12P04K.pdf
G12P04K
Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<35M@-10V,RD(MAX)<45
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 20 V
auf Bestellung 104387 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
21+0.84 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
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G12P04K GOFORD-G12P04K.pdf
Hersteller: GOFORD Semiconductor
P-CH,-40V,-11A,RD(max) Less Than 35mOhm at -10V,RD(max) Less Than 45mOhm at -4.5V,VTH -1.0V to -2.5V, TO-252
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.19 EUR
15000+0.17 EUR
30000+0.15 EUR
Mindestbestellmenge: 2500
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G12P04K GOFORD-G12P04K.pdf
G12P04K
Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<35M@-10V,RD(MAX)<45
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 20 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.23 EUR
15000+0.21 EUR
30000+0.19 EUR
50000+0.18 EUR
Mindestbestellmenge: 2500
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G12P04K GOFORD-G12P04K.pdf
G12P04K
Hersteller: Goford Semiconductor
Description: P40V,RD(MAX)<35M@-10V,RD(MAX)<45
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 20 V
Produkt ist nicht verfügbar
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G12P06K G12P06K.pdf
G12P06K
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 60V 12A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.24 EUR
15000+0.23 EUR
30000+0.21 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
G12P06K G12P06K.pdf
G12P06K
Hersteller: Goford Semiconductor
Description: P-60V,-12A,RD(MAX)<75M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1322 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.28 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
G12P06K G12P06K.pdf
Hersteller: GOFORD Semiconductor
P-CH,-60V,-12A,RD(max) Less Than 75mOhm at -10V,RD(max) Less Than 120mOhm at -4.5V,VTH -1.0V to -3.0V, TO-252
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.21 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
G12P06K G12P06K.pdf
G12P06K
Hersteller: Goford Semiconductor
Description: P-60V,-12A,RD(MAX)<75M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 6A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1322 pF @ 30 V
Produkt ist nicht verfügbar
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G12P10K products-detail.php?ProId=489
G12P10K
Hersteller: Goford Semiconductor
Description: P100V,RD(MAX)<200M@-10V,RD(MAX)<
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 57W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 50 V
Produkt ist nicht verfügbar
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G12P10K products-detail.php?ProId=489
G12P10K
Hersteller: Goford Semiconductor
Description: P100V,RD(MAX)<200M@-10V,RD(MAX)<
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 57W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 50 V
auf Bestellung 1157 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
18+0.98 EUR
100+0.68 EUR
500+0.57 EUR
1000+0.48 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
G12P10KE G12P10KE.pdf
G12P10KE
Hersteller: Goford Semiconductor
Description: MOSFET P-CH ESD 100V 12A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.28 EUR
15000+0.26 EUR
Mindestbestellmenge: 2500
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G12P10KE G12P10KE.pdf
G12P10KE
Hersteller: Goford Semiconductor
Description: P-100V,ESD,-12A,RD(MAX)<200M@-10
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1652 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.32 EUR
Mindestbestellmenge: 2500
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G12P10KE G12P10KE.pdf
Hersteller: GOFORD Semiconductor
P-CH,-100V,-12A,RD(max) Less Than 200mOhm at -10V,RD(max) Less Than 250mOhm at -4.5V,VTH -1.2V to -2.5V, TO-252
auf Bestellung 50000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.25 EUR
15000+0.22 EUR
30000+0.19 EUR
Mindestbestellmenge: 2500
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G12P10KE G12P10KE.pdf
G12P10KE
Hersteller: Goford Semiconductor
Description: P-100V,ESD,-12A,RD(MAX)<200M@-10
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 44.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1652 pF @ 50 V
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
24+0.74 EUR
100+0.5 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
G12P10TE G12P10TE.pdf
Hersteller: GOFORD Semiconductor
P-CH,-100V,-12A,RD(max) Less Than 200mOhm at -10V,VTH -1.0V to -3.0V, TO-220
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
391+0.37 EUR
Mindestbestellmenge: 391
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G12P10TE G12P10TE.pdf
G12P10TE
Hersteller: Goford Semiconductor
Description: P-100V,-12A,RD(MAX)<200M@-10V,VT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
Mindestbestellmenge: 13
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G130N06M G130N06M.pdf
G130N06M
Hersteller: Goford Semiconductor
Description: N60V, 90A,RD<12M@10V,VTH1.0V~2.4
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2867 pF @ 30 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
13+1.38 EUR
100+0.91 EUR
Mindestbestellmenge: 9
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G130N06M G130N06M.pdf
G130N06M
Hersteller: Goford Semiconductor
Description: N60V, 90A,RD<12M@10V,VTH1.0V~2.4
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2867 pF @ 30 V
Produkt ist nicht verfügbar
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G130N06M G130N06M.pdf
Hersteller: GOFORD Semiconductor
N-CH,60V,90A,RD(max) Less Than 12mOhm at 10V,RD(max) Less Than 14mOhm at 4.5V,VTH 1V to 2.4V, TO-263
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+0.36 EUR
Mindestbestellmenge: 800
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G130N06S G130N06S.pdf
G130N06S
Hersteller: Goford Semiconductor
Description: MOSFET, N-CH,60V,9A,RD(MAX)<12M@
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3068 pF @ 30 V
Produkt ist nicht verfügbar
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G130N06S G130N06S.pdf
G130N06S
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 9A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.31 EUR
Mindestbestellmenge: 4000
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G130N06S G130N06S.pdf
G130N06S
Hersteller: Goford Semiconductor
Description: MOSFET, N-CH,60V,9A,RD(MAX)<12M@
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3068 pF @ 30 V
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
20+0.9 EUR
100+0.59 EUR
500+0.45 EUR
1000+0.41 EUR
2000+0.37 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
G130N06S2 G130N06S2.pdf
G130N06S2
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.56 EUR
Mindestbestellmenge: 4000
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G130N06S2 G130N06S2.pdf
G130N06S2
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar
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G130N06S2 G130N06S2.pdf
G130N06S2
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3701 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
13+1.4 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.66 EUR
2000+0.63 EUR
Mindestbestellmenge: 8
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G13P04S G13P04S.pdf
G13P04S
Hersteller: Goford Semiconductor
Description: MOSFET P-CH 40V 13A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.34 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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