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IPL60R210P6AUMA1 IPL60R210P6AUMA1 Infineon Technologies DS_IPL60R210P6_2_0.pdf?fileId=5546d4614755559a0147914e48e3616b Description: MOSFET N-CH 600V 19.2A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
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IPL60R255P6AUMA1 IPL60R255P6AUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 600V 15.9A 4VSON
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 255mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
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IPL60R360P6SATMA1 IPL60R360P6SATMA1 Infineon Technologies DS_IPL60R360P6S_2_0.pdf?fileId=5546d4614755559a01475e68ce13047c Description: MOSFET N-CH 600V 11.3A 8THINPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.5A, 10V
Power Dissipation (Max): 89.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
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IPL60R650P6SATMA1 IPL60R650P6SATMA1 Infineon Technologies DS_IPL60R650P6S_2_0.pdf?fileId=5546d4614755559a014758fc7b850037 Description: MOSFET N-CH 600V 6.7A 8THINPAK
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: 8-ThinPak (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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IPD60R380P6ATMA1 IPD60R380P6ATMA1 Infineon Technologies Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203 Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
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IPL60R180P6AUMA1 IPL60R180P6AUMA1 Infineon Technologies DS_IPL60R180P6_2_0.pdf?fileId=5546d4614755559a01479131b3626146 Description: MOSFET N-CH 600V 22.4A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
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IPL60R210P6AUMA1 IPL60R210P6AUMA1 Infineon Technologies DS_IPL60R210P6_2_0.pdf?fileId=5546d4614755559a0147914e48e3616b Description: MOSFET N-CH 600V 19.2A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
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IPL60R360P6SATMA1 IPL60R360P6SATMA1 Infineon Technologies DS_IPL60R360P6S_2_0.pdf?fileId=5546d4614755559a01475e68ce13047c Description: MOSFET N-CH 600V 11.3A 8THINPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.5A, 10V
Power Dissipation (Max): 89.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
Produkt ist nicht verfügbar
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TLE4998C3XALA1 TLE4998C3XALA1 Infineon Technologies Infineon-TLE4998C-DS-v01_00-en.pdf?fileId=db3a3043243b5f170124bf6406be59d4 Description: SENSOR HALL PWM SSO3-10
Part Status: Active
Supplier Device Package: PG-SSO-3-10
Current - Supply (Max): 8mA
Current - Output (Max): 5mA
Sensing Range: ±50mT, ±100mT, ±200mT
Resolution: 16 b
Technology: Hall Effect
Bandwidth: Programmable
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP, SSO-3-10
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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TLE4998P3XALA1 TLE4998P3XALA1 Infineon Technologies Infineon-TLE4998P-DS-v01_00-en.pdf?fileId=db3a30431ce5fb52011d3e9a9f3425b1 Description: SENSOR HALL PWM SSO3-10
Part Status: Active
Supplier Device Package: PG-SSO-3-10
Current - Supply (Max): 8mA
Current - Output (Max): 5mA
Sensing Range: ±50mT, ±100mT, ±200mT
Resolution: 12 b
Technology: Hall Effect
Bandwidth: Programmable
Voltage - Supply: 4.5V ~ 5.5V
Qualification: AEC-Q100
Grade: Automotive
Operating Temperature: -40°C ~ 125°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP, SSO-3-10
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
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2N7002H6327XTSA2 2N7002H6327XTSA2 Infineon Technologies Infineon-2N7002-DS-v02_04-en.pdf?fileId=db3a304319bc939a0119c2a9461e79e6 Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
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70+0.3 EUR
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500+0.13 EUR
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BFR840L3RHESDE6327XTSA1 BFR840L3RHESDE6327XTSA1 Infineon Technologies Infineon-BFR840L3RHESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389709cd4ece Description: RF TRANS NPN 2.6V 75GHZ TSLP-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 75GHz
Noise Figure (dB Typ @ f): 0.5dB @ 450MHz
Supplier Device Package: PG-TSLP-3
Part Status: Active
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BSC0911NDATMA1 BSC0911NDATMA1 Infineon Technologies Infineon-BSC0911ND-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ceebf62c4946 Description: MOSFET 2N-CH 25V 18A/30A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 18A, 30A
Drain to Source Voltage (Vdss): 25V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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500+2.02 EUR
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BSP125H6327XTSA1 BSP125H6327XTSA1 Infineon Technologies Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806 Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5486 Stücke:
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17+1.29 EUR
100+0.84 EUR
500+0.65 EUR
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BSP129H6327XTSA1 BSP129H6327XTSA1 Infineon Technologies Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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500+0.64 EUR
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BSP135H6327XTSA1 BSP135H6327XTSA1 Infineon Technologies Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSP149H6327XTSA1 BSP149H6327XTSA1 Infineon Technologies Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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500+0.99 EUR
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BSP149H6906XTSA1 BSP149H6906XTSA1 Infineon Technologies Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP170PH6327XTSA1 BSP170PH6327XTSA1 Infineon Technologies Infineon-BSP170P-DS-v02_53-en.pdf?fileId=db3a30433b47825b013b5fdad470576f Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2565 Stücke:
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10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
500+0.74 EUR
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BSP171PH6327XTSA1 BSP171PH6327XTSA1 Infineon Technologies Infineon-BSP171P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b6004f59a57fa Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 460µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4337 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.31 EUR
15+1.44 EUR
100+0.94 EUR
500+0.74 EUR
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BSP295H6327XTSA1 BSP295H6327XTSA1 Infineon Technologies Infineon-BSP295-DS-v02_03-en.pdf?fileId=db3a30433b47825b013b5fc5eed1573f Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
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BSP297H6327XTSA1 BSP297H6327XTSA1 Infineon Technologies Infineon-BSP297-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b51250a8528c2 Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8119 Stücke:
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14+1.5 EUR
100+0.99 EUR
500+0.76 EUR
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BSP300H6327XUSA1 BSP300H6327XUSA1 Infineon Technologies Infineon-BSP300-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4c980bd0110d Description: MOSFET N-CH 800V 190MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 190mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Produkt ist nicht verfügbar
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BSP315PH6327XTSA1 BSP315PH6327XTSA1 Infineon Technologies Infineon-BSP315P-DS-v01_07-en.pdf?fileId=db3a30433b47825b013b6015cc1558b9 Description: MOSFET P-CH 60V 1.17A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 20123 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.88 EUR
18+1.18 EUR
100+0.77 EUR
500+0.6 EUR
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BSP316PH6327XTSA1 BSP316PH6327XTSA1 Infineon Technologies Infineon-BSP316P-DS-v01_08-en.pdf?fileId=db3a30433b47825b013b603f524159c2 Description: MOSFET P-CH 100V 680MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 680mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 25301 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.8 EUR
19+1.13 EUR
100+0.74 EUR
500+0.57 EUR
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BSP317PH6327XTSA1 BSP317PH6327XTSA1 Infineon Technologies Infineon-BSP317P-DS-v02_04-en.pdf?fileId=db3a30433b47825b013b604df1d959f2 Description: MOSFET P-CH 250V 430MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 370µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5096 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.09 EUR
16+1.32 EUR
100+0.87 EUR
500+0.67 EUR
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BSP322PH6327XTSA1 BSP322PH6327XTSA1 Infineon Technologies Infineon-BSP322P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b60a022246d9c Description: MOSFET P-CH 100V 1A SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1V @ 380µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 1425 Stücke:
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16+1.36 EUR
100+0.89 EUR
500+0.71 EUR
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BSP324H6327XTSA1 BSP324H6327XTSA1 Infineon Technologies Infineon-BSP324-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4c38c51e0fe9 Description: MOSFET N-CH 400V 170MA SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
auf Bestellung 1538 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.96 EUR
17+1.24 EUR
100+0.81 EUR
500+0.63 EUR
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BSP613PH6327XTSA1 BSP613PH6327XTSA1 Infineon Technologies Infineon-BSP613P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b60ac86a96dc0 Description: MOSFET P-CH 60V 2.9A SOT223-4
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6030 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.03 EUR
14+1.51 EUR
100+1.15 EUR
500+1 EUR
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BSS119NH6327XTSA1 BSS119NH6327XTSA1 Infineon Technologies Infineon-BSS119N-DS-v02_01-en.pdf?fileId=db3a304335f1f4b6013639b6532a164a Description: MOSFET N-CH 100V 190MA SOT23-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 70723 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.69 EUR
50+0.43 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.18 EUR
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BSS123NH6327XTSA1 BSS123NH6327XTSA1 Infineon Technologies Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631 Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS123NH6433XTMA1 BSS123NH6433XTMA1 Infineon Technologies Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631 Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 61304 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.67 EUR
53+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
2000+0.14 EUR
5000+0.13 EUR
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BSS138WH6327XTSA1 BSS138WH6327XTSA1 Infineon Technologies Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS192PH6327FTSA1 BSS192PH6327FTSA1 Infineon Technologies Infineon-BSS192P-DS-v01_07-en.pdf?fileId=db3a304342e8be2c014300e20296154c Description: MOSFET P-CH 250V 190MA SOT89
Qualification: AEC-Q101
Grade: Automotive
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Part Status: Active
Supplier Device Package: PG-SOT89
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
auf Bestellung 8789 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.71 EUR
20+1.07 EUR
100+0.69 EUR
500+0.54 EUR
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BSS209PWH6327XTSA1 BSS209PWH6327XTSA1 Infineon Technologies Infineon-BSS209PW-DS-v01_32-en.pdf?fileId=db3a3043321e499401324806c439244b Description: MOSFET P-CH 20V 630MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 630mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 64683 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.67 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 32 Stücke
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BSS223PWH6327XTSA1 BSS223PWH6327XTSA1 Infineon Technologies Infineon-BSS223PW-DS-v01_05-en.pdf?fileId=db3a3043321e49940132481523b6245f Description: MOSFET P-CH 20V 390MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 53586 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
56+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 34 Stücke
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BSS225H6327FTSA1 BSS225H6327FTSA1 Infineon Technologies Infineon--DS-v01_28-EN.pdf?fileId=db3a30433b47825b013b60c128d06dfa Description: MOSFET N-CH 600V 90MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6684 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.55 EUR
22+0.96 EUR
100+0.63 EUR
500+0.48 EUR
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BSS84PH6433XTMA1 BSS84PH6433XTMA1 Infineon Technologies Infineon-BSS84P-DS-v02_07-en.pdf?fileId=db3a304330f68606013118ac7a9b4549 Description: MOSFET P-CH 60V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V
Qualification: AEC-Q101
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BSS84PWH6327XTSA1 BSS84PWH6327XTSA1 Infineon Technologies Infineon-BSS84PW-DS-v01_05-en.pdf?fileId=db3a3043321e49940132482056d32474 Description: MOSFET P-CH 60V 150MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19.1 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BTS50901EJAXUMA1 BTS50901EJAXUMA1 Infineon Technologies Infineon-BTS5090-1EJA-DS-v02_02-EN.pdf?fileId=5546d4625a888733015aa410fc371059 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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11+2.03 EUR
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IPB120P04P4L03ATMA1 IPB120P04P4L03ATMA1 Infineon Technologies Infineon-IPP_B_I120P04P4L_03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f&ack=t Description: MOSFET P-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPB160N04S4H1ATMA1 IPB160N04S4H1ATMA1 Infineon Technologies Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t Description: MOSFET N-CH 40V 160A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 10920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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IPB64N25S320ATMA1 IPB64N25S320ATMA1 Infineon Technologies infineon-ipb64n25s3-20-datasheet-en.pdf Description: MOSFET N-CH 250V 64A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPD65R225C7ATMA1 IPD65R225C7ATMA1 Infineon Technologies Infineon-IPD65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e793234000141 Description: MOSFET N-CH 650V 11A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 26693 Stücke:
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4+6.15 EUR
10+3.99 EUR
100+2.76 EUR
500+2.24 EUR
1000+2.18 EUR
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IPD90P04P405ATMA1 IPD90P04P405ATMA1 Infineon Technologies Infineon-IPD90P04P4_05-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79&ack=t Description: MOSFET P-CH 40V 90A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPD90P04P4L04ATMA1 IPD90P04P4L04ATMA1 Infineon Technologies Infineon-IPD90P04P4L_04-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7829059b2dee&ack=t Description: MOSFET P-CH 40V 90A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPG20N04S408ATMA1 IPG20N04S408ATMA1 Infineon Technologies Infineon-IPG20N04S4_08-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf5de5da6bfb&ack=t Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 13103 Stücke:
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IPG20N06S4L26ATMA1 IPG20N06S4L26ATMA1 Infineon Technologies Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
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7+3.22 EUR
11+2.05 EUR
100+1.37 EUR
500+1.08 EUR
1000+0.99 EUR
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ITS4100SSJNXUMA1 ITS4100SSJNXUMA1 Infineon Technologies Infineon-ITS4100S-SJ-N-DataSheet-v01_10-EN.pdf?fileId=5546d4626c1f3dc3016c9049397e2318 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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ITS4200SMENHUMA1 ITS4200SMENHUMA1 Infineon Technologies Infineon-ITS4200S_ME_N_01092012S-DS-v01_00-en.pdf?fileId=db3a304339dcf4b1013a013ee841573f&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 7200 Stücke:
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ITS4200SMEOHUMA1 ITS4200SMEOHUMA1 Infineon Technologies Infineon-ITS4200S_ME_O_01092012S-DS-v01_00-en.pdf?fileId=db3a304339dcf4b1013a013fb7455740&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 19668 Stücke:
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ITS4200SMEPHUMA1 ITS4200SMEPHUMA1 Infineon Technologies Infineon-ITS4200S_ME_P_01092012S-DS-v01_00-en.pdf?fileId=db3a304339dcf4b1013a0140684a5741&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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ITS4200SSJDXUMA1 ITS4200SSJDXUMA1 Infineon Technologies Infineon-ITS4200S-SJ-D-DataSheet-v01_10-EN.pdf?fileId=5546d4626c1f3dc3016c90492f772315 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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ITS4300SSJDXUMA1 ITS4300SSJDXUMA1 Infineon Technologies Infineon-ITS4300S-SJ-D-DataSheet-v01_10-EN.pdf?fileId=5546d4626c1f3dc3016c904925722312 Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 300mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
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KP229E3111XTMA1 KP229E3111XTMA1 Infineon Technologies Infineon-KP229E3111-DS-v01_00-EN.pdf?fileId=5546d4624bcaebcf014be98f6a2e3c19 Description: SENSOR 43.51PSIA 4.65V MODULE
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 2.9PSI ~ 43.51PSI (20kPa ~ 300kPa)
Pressure Type: Absolute
Accuracy: ±0.54PSI (±3.75kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: Module
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
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3+7.1 EUR
5+6.35 EUR
10+6.08 EUR
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50+5.52 EUR
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KP254XTMA1 KP254XTMA1 Infineon Technologies Infineon-KP254-DS-v01_01-EN.pdf?fileId=5546d46254e133b401557355b9a5643b Description: SENSOR 16.68PSIA 10BIT
Applications: Board Mount
Voltage - Supply: 3.3V, 5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C
Accuracy: ±0.44PSI (±3kPa)
Pressure Type: Absolute
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Output: 10 b
Mounting Type: Surface Mount
Output Type: SPI
Package / Case: 8-SMD Module
Features: Temperature Compensated
Part Status: Obsolete
Port Style: No Port
Packaging: Cut Tape (CT)
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SN7002WH6327XTSA1 SN7002WH6327XTSA1 Infineon Technologies Infineon-SN7002W-DS-v02_05-en.pdf?fileId=db3a3043344adb9d0134569a59ab6195 Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27610 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.63 EUR
55+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
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TLE49611MXTSA1 TLE49611MXTSA1 Infineon Technologies Infineon-TLE4961_1M-DS-v01_00-en.pdf?fileId=db3a304338e5bb6e0138e7c1d93c0261 Description: MAGNETIC SWITCH LATCH SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 3.5mT Trip, -3.5mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.57 EUR
18+1.19 EUR
25+1.02 EUR
50+0.99 EUR
100+0.84 EUR
500+0.74 EUR
1000+0.64 EUR
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TLE49663KHTSA1 TLE49663KHTSA1 Infineon Technologies Infineon-TLE4966_3K-DS-v01_00-en.pdf?fileId=db3a30432b57a660012ba0adf1880bb7 Description: MAG SWITCH SPEC PURP TSOP-6-6
Supplier Device Package: PG-TSOP6-6
Current - Supply (Max): 7mA
Current - Output (Max): 50mA
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 24V
Function: Special Purpose
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: SOT-23-6 Thin, TSOT-23-6
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 2310 Stücke:
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19+1.17 EUR
20+1.09 EUR
25+1.02 EUR
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100+0.93 EUR
500+0.84 EUR
1000+0.81 EUR
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TLE5012BE1000XUMA1 TLE5012BE1000XUMA1 Infineon Technologies Infineon-TLE5012B_Exxxx-DS-v02_00-en.pdf?fileId=db3a304334fac4c601350f31c43c433f Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 8639 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.91 EUR
5+6.16 EUR
10+5.9 EUR
25+5.58 EUR
50+5.36 EUR
100+5.15 EUR
500+4.75 EUR
1000+4.59 EUR
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IPL60R210P6AUMA1 DS_IPL60R210P6_2_0.pdf?fileId=5546d4614755559a0147914e48e3616b
IPL60R210P6AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19.2A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPL60R255P6AUMA1 fundamentals-of-power-semiconductors
IPL60R255P6AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 15.9A 4VSON
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 530µA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 255mOhm @ 6.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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IPL60R360P6SATMA1 DS_IPL60R360P6S_2_0.pdf?fileId=5546d4614755559a01475e68ce13047c
IPL60R360P6SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11.3A 8THINPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.5A, 10V
Power Dissipation (Max): 89.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
Produkt ist nicht verfügbar
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IPL60R650P6SATMA1 DS_IPL60R650P6S_2_0.pdf?fileId=5546d4614755559a014758fc7b850037
IPL60R650P6SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.7A 8THINPAK
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: 8-ThinPak (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD60R380P6ATMA1 Infineon-IPX60R380P6-DS-v02_02-EN.pdf?fileId=db3a3043416e106e01416e9316410203
IPD60R380P6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 100 V
auf Bestellung 4747 Stücke:
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6+3.94 EUR
10+2.5 EUR
100+1.69 EUR
500+1.34 EUR
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IPL60R180P6AUMA1 DS_IPL60R180P6_2_0.pdf?fileId=5546d4614755559a01479131b3626146
IPL60R180P6AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 22.4A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 750µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 100 V
auf Bestellung 4488 Stücke:
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3+7.77 EUR
10+5.09 EUR
100+3.58 EUR
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IPL60R210P6AUMA1 DS_IPL60R210P6_2_0.pdf?fileId=5546d4614755559a0147914e48e3616b
IPL60R210P6AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19.2A 4VSON
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-VSON-4
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Power Dissipation (Max): 151W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 7.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Cut Tape (CT)
auf Bestellung 2885 Stücke:
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AnzahlPrivatkunde
4+6.78 EUR
10+4.43 EUR
100+3.08 EUR
500+2.51 EUR
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IPL60R360P6SATMA1 DS_IPL60R360P6S_2_0.pdf?fileId=5546d4614755559a01475e68ce13047c
IPL60R360P6SATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 11.3A 8THINPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 4.5A, 10V
Power Dissipation (Max): 89.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: 8-ThinPak (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
Produkt ist nicht verfügbar
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TLE4998C3XALA1 Infineon-TLE4998C-DS-v01_00-en.pdf?fileId=db3a3043243b5f170124bf6406be59d4
TLE4998C3XALA1
Hersteller: Infineon Technologies
Description: SENSOR HALL PWM SSO3-10
Part Status: Active
Supplier Device Package: PG-SSO-3-10
Current - Supply (Max): 8mA
Current - Output (Max): 5mA
Sensing Range: ±50mT, ±100mT, ±200mT
Resolution: 16 b
Technology: Hall Effect
Bandwidth: Programmable
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP, SSO-3-10
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 1854 Stücke:
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AnzahlPrivatkunde
4+6.12 EUR
5+5.46 EUR
10+5.22 EUR
25+4.93 EUR
50+4.74 EUR
100+4.56 EUR
500+4.19 EUR
1000+4.08 EUR
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TLE4998P3XALA1 Infineon-TLE4998P-DS-v01_00-en.pdf?fileId=db3a30431ce5fb52011d3e9a9f3425b1
TLE4998P3XALA1
Hersteller: Infineon Technologies
Description: SENSOR HALL PWM SSO3-10
Part Status: Active
Supplier Device Package: PG-SSO-3-10
Current - Supply (Max): 8mA
Current - Output (Max): 5mA
Sensing Range: ±50mT, ±100mT, ±200mT
Resolution: 12 b
Technology: Hall Effect
Bandwidth: Programmable
Voltage - Supply: 4.5V ~ 5.5V
Qualification: AEC-Q100
Grade: Automotive
Operating Temperature: -40°C ~ 125°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP, SSO-3-10
Features: Selectable Scale, Temperature Compensated
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2N7002H6327XTSA2 Infineon-2N7002-DS-v02_04-en.pdf?fileId=db3a304319bc939a0119c2a9461e79e6
2N7002H6327XTSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V
auf Bestellung 215369 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
70+0.3 EUR
113+0.19 EUR
500+0.13 EUR
1000+0.12 EUR
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BFR840L3RHESDE6327XTSA1 Infineon-BFR840L3RHESD-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389709cd4ece
BFR840L3RHESDE6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 2.6V 75GHZ TSLP-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
Frequency - Transition: 75GHz
Noise Figure (dB Typ @ f): 0.5dB @ 450MHz
Supplier Device Package: PG-TSLP-3
Part Status: Active
auf Bestellung 13845 Stücke:
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AnzahlPrivatkunde
15+1.46 EUR
21+1.05 EUR
25+0.94 EUR
100+0.82 EUR
250+0.77 EUR
500+0.74 EUR
1000+0.71 EUR
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BSC0911NDATMA1 Infineon-BSC0911ND-DS-v02_00-en.pdf?fileId=db3a304336ca04c90136ceebf62c4946
BSC0911NDATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 25V 18A/30A TISON8
Part Status: Active
Supplier Device Package: PG-TISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 12V
Current - Continuous Drain (Id) @ 25°C: 18A, 30A
Drain to Source Voltage (Vdss): 25V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 9630 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.62 EUR
10+3.63 EUR
100+2.5 EUR
500+2.02 EUR
1000+1.93 EUR
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BSP125H6327XTSA1 Infineon-BSP125-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b50cae9702806
BSP125H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5486 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.05 EUR
17+1.29 EUR
100+0.84 EUR
500+0.65 EUR
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BSP129H6327XTSA1 Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f
BSP129H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12550 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.01 EUR
17+1.26 EUR
100+0.82 EUR
500+0.64 EUR
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BSP135H6327XTSA1 Infineon-BSP135-DS-v01_33-en.pdf?fileId=db3a30433c1a8752013c1fd4c839399b
BSP135H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 120MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 120mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2448 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.25 EUR
11+2.06 EUR
100+1.38 EUR
500+1.08 EUR
Mindestbestellmenge: 7 Stücke
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BSP149H6327XTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19410 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3 EUR
12+1.89 EUR
100+1.26 EUR
500+0.99 EUR
Mindestbestellmenge: 7 Stücke
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BSP149H6906XTSA1 Infineon-BSP149-DS-v02_01-en.pdf?fileId=db3a30433c1a8752013c1fcbb815397c
BSP149H6906XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP170PH6327XTSA1 Infineon-BSP170P-DS-v02_53-en.pdf?fileId=db3a30433b47825b013b5fdad470576f
BSP170PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2565 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
500+0.74 EUR
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BSP171PH6327XTSA1 Infineon-BSP171P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b6004f59a57fa
BSP171PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 460µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4337 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.31 EUR
15+1.44 EUR
100+0.94 EUR
500+0.74 EUR
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BSP295H6327XTSA1 Infineon-BSP295-DS-v02_03-en.pdf?fileId=db3a30433b47825b013b5fc5eed1573f
BSP295H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
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BSP297H6327XTSA1 Infineon-BSP297-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b51250a8528c2
BSP297H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 660MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8119 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.39 EUR
14+1.5 EUR
100+0.99 EUR
500+0.76 EUR
Mindestbestellmenge: 9 Stücke
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BSP300H6327XUSA1 Infineon-BSP300-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4c980bd0110d
BSP300H6327XUSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 190MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 190mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Produkt ist nicht verfügbar
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BSP315PH6327XTSA1 Infineon-BSP315P-DS-v01_07-en.pdf?fileId=db3a30433b47825b013b6015cc1558b9
BSP315PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.17A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 160µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 20123 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.88 EUR
18+1.18 EUR
100+0.77 EUR
500+0.6 EUR
Mindestbestellmenge: 12 Stücke
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BSP316PH6327XTSA1 Infineon-BSP316P-DS-v01_08-en.pdf?fileId=db3a30433b47825b013b603f524159c2
BSP316PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 680MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 680mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 170µA
Supplier Device Package: PG-SOT223-4
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 146 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 25301 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.8 EUR
19+1.13 EUR
100+0.74 EUR
500+0.57 EUR
Mindestbestellmenge: 12 Stücke
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BSP317PH6327XTSA1 Infineon-BSP317P-DS-v02_04-en.pdf?fileId=db3a30433b47825b013b604df1d959f2
BSP317PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 250V 430MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 262 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 370µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 430mA, 10V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 5096 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.09 EUR
16+1.32 EUR
100+0.87 EUR
500+0.67 EUR
Mindestbestellmenge: 10 Stücke
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BSP322PH6327XTSA1 Infineon-BSP322P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b60a022246d9c
BSP322PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 1A SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1V @ 380µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 1425 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.36 EUR
100+0.89 EUR
500+0.71 EUR
Mindestbestellmenge: 16 Stücke
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BSP324H6327XTSA1 Infineon-BSP324-DS-v02_02-en.pdf?fileId=db3a30433b47825b013b4c38c51e0fe9
BSP324H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 400V 170MA SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 25Ohm @ 170mA, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 154 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
auf Bestellung 1538 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.96 EUR
17+1.24 EUR
100+0.81 EUR
500+0.63 EUR
Mindestbestellmenge: 11 Stücke
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BSP613PH6327XTSA1 Infineon-BSP613P-DS-v02_07-en.pdf?fileId=db3a30433b47825b013b60ac86a96dc0
BSP613PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 2.9A SOT223-4
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6030 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.03 EUR
14+1.51 EUR
100+1.15 EUR
500+1 EUR
Mindestbestellmenge: 7 Stücke
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BSS119NH6327XTSA1 Infineon-BSS119N-DS-v02_01-en.pdf?fileId=db3a304335f1f4b6013639b6532a164a
BSS119NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2.3V @ 13µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 70723 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
50+0.43 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 31 Stücke
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BSS123NH6327XTSA1 Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631
BSS123NH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS123NH6433XTMA1 Infineon-BSS123N-DS-v02_03-en.pdf?fileId=db3a304335f1f4b6013639adfaaa1631
BSS123NH6433XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 190MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 13µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 61304 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
53+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
2000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 32 Stücke
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BSS138WH6327XTSA1 Infineon-BSS138W-DS-v02_43-en.pdf?fileId=db3a304335113a6301351e62fcb4131f
BSS138WH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 280MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS192PH6327FTSA1 Infineon-BSS192P-DS-v01_07-en.pdf?fileId=db3a304342e8be2c014300e20296154c
BSS192PH6327FTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 250V 190MA SOT89
Qualification: AEC-Q101
Grade: Automotive
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Part Status: Active
Supplier Device Package: PG-SOT89
Vgs(th) (Max) @ Id: 2V @ 130µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
auf Bestellung 8789 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.71 EUR
20+1.07 EUR
100+0.69 EUR
500+0.54 EUR
Mindestbestellmenge: 13 Stücke
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BSS209PWH6327XTSA1 Infineon-BSS209PW-DS-v01_32-en.pdf?fileId=db3a3043321e499401324806c439244b
BSS209PWH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 630MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 630mA (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 630mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.5µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 64683 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
32+0.67 EUR
52+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 32 Stücke
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BSS223PWH6327XTSA1 Infineon-BSS223PW-DS-v01_05-en.pdf?fileId=db3a3043321e49940132481523b6245f
BSS223PWH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 390MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 53586 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
56+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 34 Stücke
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BSS225H6327FTSA1 Infineon--DS-v01_28-EN.pdf?fileId=db3a30433b47825b013b60c128d06dfa
BSS225H6327FTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 90MA SOT89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90mA (Ta)
Rds On (Max) @ Id, Vgs: 45Ohm @ 90mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 94µA
Supplier Device Package: PG-SOT89
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 131 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6684 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.55 EUR
22+0.96 EUR
100+0.63 EUR
500+0.48 EUR
Mindestbestellmenge: 14 Stücke
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BSS84PH6433XTMA1 Infineon-BSS84P-DS-v02_07-en.pdf?fileId=db3a304330f68606013118ac7a9b4549
BSS84PH6433XTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 170MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS84PWH6327XTSA1 Infineon-BSS84PW-DS-v01_05-en.pdf?fileId=db3a3043321e49940132482056d32474
BSS84PWH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 150MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19.1 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
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BTS50901EJAXUMA1 Infineon-BTS5090-1EJA-DS-v02_02-EN.pdf?fileId=5546d4625a888733015aa410fc371059
BTS50901EJAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 90mOhm
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-43-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 856 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.78 EUR
11+2.03 EUR
25+1.84 EUR
100+1.63 EUR
250+1.54 EUR
500+1.48 EUR
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IPB120P04P4L03ATMA1 Infineon-IPP_B_I120P04P4L_03-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f&ack=t
IPB120P04P4L03ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPB160N04S4H1ATMA1 Infineon-IPB160N04S4_H1-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c39839f5d47&ack=t
IPB160N04S4H1ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 10920 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 727 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.45 EUR
10+4.2 EUR
100+2.92 EUR
500+2.37 EUR
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IPB64N25S320ATMA1 infineon-ipb64n25s3-20-datasheet-en.pdf
IPB64N25S320ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 64A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 64A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2549 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.27 EUR
10+9.65 EUR
100+7.03 EUR
500+6.77 EUR
Mindestbestellmenge: 2 Stücke
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IPD65R225C7ATMA1 Infineon-IPD65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e793234000141
IPD65R225C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 26693 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.15 EUR
10+3.99 EUR
100+2.76 EUR
500+2.24 EUR
1000+2.18 EUR
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IPD90P04P405ATMA1 Infineon-IPD90P04P4_05-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79&ack=t
IPD90P04P405ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPD90P04P4L04ATMA1 Infineon-IPD90P04P4L_04-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7829059b2dee&ack=t
IPD90P04P4L04ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPG20N04S408ATMA1 Infineon-IPG20N04S4_08-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf5de5da6bfb&ack=t
IPG20N04S408ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 65W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 13103 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.19 EUR
10+2.69 EUR
100+1.82 EUR
500+1.45 EUR
1000+1.33 EUR
2000+1.25 EUR
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IPG20N06S4L26ATMA1 Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t
IPG20N06S4L26ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 33W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 9501 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.22 EUR
11+2.05 EUR
100+1.37 EUR
500+1.08 EUR
1000+0.99 EUR
2000+0.9 EUR
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ITS4100SSJNXUMA1 Infineon-ITS4100S-SJ-N-DataSheet-v01_10-EN.pdf?fileId=5546d4626c1f3dc3016c9049397e2318
ITS4100SSJNXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Produkt ist nicht verfügbar
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ITS4200SMENHUMA1 Infineon-ITS4200S_ME_N_01092012S-DS-v01_00-en.pdf?fileId=db3a304339dcf4b1013a013ee841573f&ack=t
ITS4200SMENHUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.45 EUR
10+2.53 EUR
25+2.31 EUR
100+2.05 EUR
250+1.93 EUR
500+1.86 EUR
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ITS4200SMEOHUMA1 Infineon-ITS4200S_ME_O_01092012S-DS-v01_00-en.pdf?fileId=db3a304339dcf4b1013a013fb7455740&ack=t
ITS4200SMEOHUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 19668 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.27 EUR
10+2.39 EUR
25+2.18 EUR
100+1.94 EUR
250+1.82 EUR
500+1.75 EUR
Mindestbestellmenge: 7 Stücke
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ITS4200SMEPHUMA1 Infineon-ITS4200S_ME_P_01092012S-DS-v01_00-en.pdf?fileId=db3a304339dcf4b1013a0140684a5741&ack=t
ITS4200SMEPHUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 11V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 32753 Stücke:
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AnzahlPrivatkunde
7+3.36 EUR
10+2.46 EUR
25+2.24 EUR
100+1.99 EUR
250+1.87 EUR
500+1.81 EUR
1000+1.8 EUR
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ITS4200SSJDXUMA1 Infineon-ITS4200S-SJ-D-DataSheet-v01_10-EN.pdf?fileId=5546d4626c1f3dc3016c90492f772315
ITS4200SSJDXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.2A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 15136 Stücke:
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AnzahlPrivatkunde
8+2.75 EUR
11+1.99 EUR
25+1.81 EUR
100+1.61 EUR
250+1.5 EUR
500+1.44 EUR
1000+1.43 EUR
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ITS4300SSJDXUMA1 Infineon-ITS4300S-SJ-D-DataSheet-v01_10-EN.pdf?fileId=5546d4626c1f3dc3016c904925722312
ITS4300SSJDXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 300mOhm
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
auf Bestellung 10366 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.34 EUR
13+1.71 EUR
25+1.55 EUR
100+1.37 EUR
250+1.29 EUR
500+1.24 EUR
1000+1.21 EUR
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KP229E3111XTMA1 Infineon-KP229E3111-DS-v01_00-EN.pdf?fileId=5546d4624bcaebcf014be98f6a2e3c19
KP229E3111XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 43.51PSIA 4.65V MODULE
Packaging: Cut Tape (CT)
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.4 V ~ 4.65 V
Operating Pressure: 2.9PSI ~ 43.51PSI (20kPa ~ 300kPa)
Pressure Type: Absolute
Accuracy: ±0.54PSI (±3.75kPa)
Operating Temperature: -40°C ~ 140°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: Module
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1015 Stücke:
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3+7.1 EUR
5+6.35 EUR
10+6.08 EUR
25+5.75 EUR
50+5.52 EUR
100+5.31 EUR
500+4.89 EUR
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KP254XTMA1 Infineon-KP254-DS-v01_01-EN.pdf?fileId=5546d46254e133b401557355b9a5643b
KP254XTMA1
Hersteller: Infineon Technologies
Description: SENSOR 16.68PSIA 10BIT
Applications: Board Mount
Voltage - Supply: 3.3V, 5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C
Accuracy: ±0.44PSI (±3kPa)
Pressure Type: Absolute
Operating Pressure: 5.8PSI ~ 16.68PSI (40kPa ~ 115kPa)
Output: 10 b
Mounting Type: Surface Mount
Output Type: SPI
Package / Case: 8-SMD Module
Features: Temperature Compensated
Part Status: Obsolete
Port Style: No Port
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SN7002WH6327XTSA1 Infineon-SN7002W-DS-v02_05-en.pdf?fileId=db3a3043344adb9d0134569a59ab6195
SN7002WH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 27610 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
34+0.63 EUR
55+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
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TLE49611MXTSA1 Infineon-TLE4961_1M-DS-v01_00-en.pdf?fileId=db3a304338e5bb6e0138e7c1d93c0261
TLE49611MXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 3.5mT Trip, -3.5mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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14+1.57 EUR
18+1.19 EUR
25+1.02 EUR
50+0.99 EUR
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500+0.74 EUR
1000+0.64 EUR
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TLE49663KHTSA1 Infineon-TLE4966_3K-DS-v01_00-en.pdf?fileId=db3a30432b57a660012ba0adf1880bb7
TLE49663KHTSA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEC PURP TSOP-6-6
Supplier Device Package: PG-TSOP6-6
Current - Supply (Max): 7mA
Current - Output (Max): 50mA
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 24V
Function: Special Purpose
Mounting Type: Surface Mount
Output Type: Open Collector
Package / Case: SOT-23-6 Thin, TSOT-23-6
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 2310 Stücke:
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16+1.32 EUR
19+1.17 EUR
20+1.09 EUR
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100+0.93 EUR
500+0.84 EUR
1000+0.81 EUR
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TLE5012BE1000XUMA1 Infineon-TLE5012B_Exxxx-DS-v02_00-en.pdf?fileId=db3a304334fac4c601350f31c43c433f
TLE5012BE1000XUMA1
Hersteller: Infineon Technologies
Description: SENSOR ANGLE 360DEG SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Wheatstone Bridge
Operating Temperature: -40°C ~ 150°C
Termination Style: Gull Wing
Voltage - Supply: 3V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 8639 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.91 EUR
5+6.16 EUR
10+5.9 EUR
25+5.58 EUR
50+5.36 EUR
100+5.15 EUR
500+4.75 EUR
1000+4.59 EUR
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